HIGHLY EFFICIENT GALLIUM NITRIDE BASED LIGHT EMITTING DIODES VIA SURFACE ROUGHENING | Matter42 Literature
Patent
Atlas literature
Patent
US 11,677,044 B2
HIGHLY EFFICIENT GALLIUM NITRIDE BASED LIGHT EMITTING DIODES VIA SURFACE ROUGHENING
Tetsuo Fujii, Yan Gao, Evelyn L. Hu, Shuji Nakamura
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US)·Jun. 13, 2023·US
Drawings
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1
FIG. 1 is a schematic cross-section of a conventional LED structure;
FIG. 2
FIG. 2 is a schematic cross-section of a flip-chip type LED structure;
FIG. 3
FIG. 3 is a schematic of a surface roughened LED;
FIG. 4
FIG. 4 is a flowchart that illustrates the processing steps used in the preferred embodiment of the present invention;
FIG. 5
FIGS. 5A, 5B, 5C, 5D, 5E and 5F further illustrate the fabrication steps for the LEDs with surface roughening;
FIG. 6
FIG. 6A shows an LED with a current-blocking layer, while
FIG. 7
FIGS. 7A and 7B are plan-view micrographs of an LLO- LED with a cross-shaped n-electrode;
FIG. 8
FIGS. 8A and 8B are scanning electron micrograph (SEM) images of the N-face of GaN after PEC etching for different etching times;
FIG. 9
FIGS. 9A and 9B show an electroluminescence (EL) spectra from a flat-surface LED and a roughened-surface LED, respectively; and
FIG. 10
performance graph
FIG. 10 is a graph of upward EL output power vs. DC injection current (L-I) characteristics for the LEDs with different etching times at room temperature.
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
2 independent · 18 dependent
1
IndependentGaN(B,Al,Ga,In)N alloyGaN-based LED with roughened N-face surface
A device, comprising: a gallium nitride (GaN) based light emitting diode (LED) including at least an n-type layer, an emitting layer, and a p-type layer; wherein light from the emitting layer is extracted through a nitrogen face (N-face) surface of at least one of the layers of the LED, the N-face surface is roughened, and the roughened N-face surface extracts more light out of the LED by scattering or diffracting the light.
2
Dependent← claim 1GaNAl₂O₃GaN-based LED with roughened N-face surface
The device of claim 1, wherein the LED is grown on a sapphire substrate, the p-type layer’s surface is a gallium face (Ga-face), and the n-type layer’s surface is a nitrogen face (N-face).
4
Dependent← claim 1GaNGaN-based LED with roughened N-face surface
The device of claim 1, wherein the N-face surface is roughened by an anisotropic etching.
6
Dependent← claim 1GaNGaN-based LED with roughened N-face surface
The device of claim 1, wherein the N-face surface is roughened into one or more structures.
11
Dependent← claim 1GaNGaN-based LED with roughened N-face surface
The device of claim 1, wherein the extraction effi-ciency of the light out of the roughened N-face surface is increased by more than 100% as compared to an N-face surface that is not roughened.
12
IndependentGaN(B,Al,Ga,In)N alloyGaN-based LED with roughened N-face surface
A method, comprising: fabricating a gallium nitride (GaN) based light emitting diode (LED) including at least an n-type layer, an emitting layer, and a p-type layer; wherein light from the emitting layer is extracted through a nitrogen face (N-face) surface of at least one of the layers of the LED, the N-face surface is roughened, and the roughened N-face surface extracts more light out of the LED by scattering or diffracting the light. 11 12
13
Dependent← claim 12GaNAl₂O₃GaNGaN-based LED with roughened N-face surface
The method of claim 12, wherein the LED is grown on a c-plane GaN or sapphire substrate, the p-type layer’s surface is a gallium face (Ga-face), and the n-type layer’s surface is the N-face surface.
15
Dependent← claim 12GaNGaN-based LED with roughened N-face surface
The method of claim 12, wherein the N-face surface is roughened by an anisotropic etching.
17
Dependent← claim 12GaNGaN-based LED with roughened N-face surface
The method of claim 12, wherein the N-face surface is roughened into one or more structures.
Worked examples
Embodiments described in the patent, grouped by the materials and process steps they use.
Experimental Results
description derived process summary
10 materials5 process steps
Ga-face epitaxial layers grown on c-plane sapphire substrate by MOCVD. Structure comprised of 4 µm-thick undoped and Si-doped GaN layers, a 5-period GaN/InGaN multi-quantum-well (MQW), a 20 nm-thick Mg-doped Al0.2Ga0.8N layer, and 0.3 µm-thick Mg-doped GaN. After MOCVD, sample annealed for p-type activation; p-type metallization with Ag-based electrode as highly reflective p-GaN contact. Thick Au deposited followed by Sn evaporation; wafer bonded to Au-coated Si submount at 280°C (Au/Sn alloy). LLO performed with KrF laser (248 nm) through sapphire substrate, decomposing GaN at GaN/sapphire interface. Sapphire debonded, residual Ga droplets removed with HCl solution. Transferred GaN thinned until Si-doped N-face GaN exposed; n-contact formed on exposed N-face n-GaN. PEC etching used to roughen N-face GaN surface by immersing in KOH electrolyte and irradiating with Xe/Hg lamp. Device isolation by dry etching, dicing, or cleaving.
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
HIGHLY EFFICIENT GALLIUM NITRIDE BASED LIGHT EMITTING DIODES VIA SURFACE ROUGHENING
Tetsuo Fujii, Yan Gao, Evelyn L. Hu, Shuji Nakamura
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US)·Jun. 13, 2023·US
Drawings
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1
FIG. 1 is a schematic cross-section of a conventional LED structure;
FIG. 2
FIG. 2 is a schematic cross-section of a flip-chip type LED structure;
FIG. 3
FIG. 3 is a schematic of a surface roughened LED;
FIG. 4
FIG. 4 is a flowchart that illustrates the processing steps used in the preferred embodiment of the present invention;
FIG. 5
FIGS. 5A, 5B, 5C, 5D, 5E and 5F further illustrate the fabrication steps for the LEDs with surface roughening;
FIG. 6
FIG. 6A shows an LED with a current-blocking layer, while
FIG. 7
FIGS. 7A and 7B are plan-view micrographs of an LLO- LED with a cross-shaped n-electrode;
FIG. 8
FIGS. 8A and 8B are scanning electron micrograph (SEM) images of the N-face of GaN after PEC etching for different etching times;
FIG. 9
FIGS. 9A and 9B show an electroluminescence (EL) spectra from a flat-surface LED and a roughened-surface LED, respectively; and
FIG. 10
performance graph
FIG. 10 is a graph of upward EL output power vs. DC injection current (L-I) characteristics for the LEDs with different etching times at room temperature.
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
2 independent · 18 dependent
1
IndependentGaN(B,Al,Ga,In)N alloyGaN-based LED with roughened N-face surface
A device, comprising: a gallium nitride (GaN) based light emitting diode (LED) including at least an n-type layer, an emitting layer, and a p-type layer; wherein light from the emitting layer is extracted through a nitrogen face (N-face) surface of at least one of the layers of the LED, the N-face surface is roughened, and the roughened N-face surface extracts more light out of the LED by scattering or diffracting the light.
2
Dependent← claim 1GaNAl₂O₃GaN-based LED with roughened N-face surface
The device of claim 1, wherein the LED is grown on a sapphire substrate, the p-type layer’s surface is a gallium face (Ga-face), and the n-type layer’s surface is a nitrogen face (N-face).
4
Dependent← claim 1GaNGaN-based LED with roughened N-face surface
The device of claim 1, wherein the N-face surface is roughened by an anisotropic etching.
6
Dependent← claim 1GaNGaN-based LED with roughened N-face surface
The device of claim 1, wherein the N-face surface is roughened into one or more structures.
11
Dependent← claim 1GaNGaN-based LED with roughened N-face surface
The device of claim 1, wherein the extraction effi-ciency of the light out of the roughened N-face surface is increased by more than 100% as compared to an N-face surface that is not roughened.
12
IndependentGaN(B,Al,Ga,In)N alloyGaN-based LED with roughened N-face surface
A method, comprising: fabricating a gallium nitride (GaN) based light emitting diode (LED) including at least an n-type layer, an emitting layer, and a p-type layer; wherein light from the emitting layer is extracted through a nitrogen face (N-face) surface of at least one of the layers of the LED, the N-face surface is roughened, and the roughened N-face surface extracts more light out of the LED by scattering or diffracting the light. 11 12
13
Dependent← claim 12GaNAl₂O₃GaNGaN-based LED with roughened N-face surface
The method of claim 12, wherein the LED is grown on a c-plane GaN or sapphire substrate, the p-type layer’s surface is a gallium face (Ga-face), and the n-type layer’s surface is the N-face surface.
15
Dependent← claim 12GaNGaN-based LED with roughened N-face surface
The method of claim 12, wherein the N-face surface is roughened by an anisotropic etching.
17
Dependent← claim 12GaNGaN-based LED with roughened N-face surface
The method of claim 12, wherein the N-face surface is roughened into one or more structures.
Worked examples
Embodiments described in the patent, grouped by the materials and process steps they use.
Experimental Results
description derived process summary
10 materials5 process steps
Ga-face epitaxial layers grown on c-plane sapphire substrate by MOCVD. Structure comprised of 4 µm-thick undoped and Si-doped GaN layers, a 5-period GaN/InGaN multi-quantum-well (MQW), a 20 nm-thick Mg-doped Al0.2Ga0.8N layer, and 0.3 µm-thick Mg-doped GaN. After MOCVD, sample annealed for p-type activation; p-type metallization with Ag-based electrode as highly reflective p-GaN contact. Thick Au deposited followed by Sn evaporation; wafer bonded to Au-coated Si submount at 280°C (Au/Sn alloy). LLO performed with KrF laser (248 nm) through sapphire substrate, decomposing GaN at GaN/sapphire interface. Sapphire debonded, residual Ga droplets removed with HCl solution. Transferred GaN thinned until Si-doped N-face GaN exposed; n-contact formed on exposed N-face n-GaN. PEC etching used to roughen N-face GaN surface by immersing in KOH electrolyte and irradiating with Xe/Hg lamp. Device isolation by dry etching, dicing, or cleaving.
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
HIGHLY EFFICIENT GALLIUM NITRIDE BASED LIGHT EMITTING DIODES VIA SURFACE ROUGHENING
Tetsuo Fujii, Yan Gao, Evelyn L. Hu, Shuji Nakamura
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US)·Jun. 13, 2023·US
Drawings
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1
FIG. 1 is a schematic cross-section of a conventional LED structure;
FIG. 2
FIG. 2 is a schematic cross-section of a flip-chip type LED structure;
FIG. 3
FIG. 3 is a schematic of a surface roughened LED;
FIG. 4
FIG. 4 is a flowchart that illustrates the processing steps used in the preferred embodiment of the present invention;
FIG. 5
FIGS. 5A, 5B, 5C, 5D, 5E and 5F further illustrate the fabrication steps for the LEDs with surface roughening;
FIG. 6
FIG. 6A shows an LED with a current-blocking layer, while
FIG. 7
FIGS. 7A and 7B are plan-view micrographs of an LLO- LED with a cross-shaped n-electrode;
FIG. 8
FIGS. 8A and 8B are scanning electron micrograph (SEM) images of the N-face of GaN after PEC etching for different etching times;
FIG. 9
FIGS. 9A and 9B show an electroluminescence (EL) spectra from a flat-surface LED and a roughened-surface LED, respectively; and
FIG. 10
performance graph
FIG. 10 is a graph of upward EL output power vs. DC injection current (L-I) characteristics for the LEDs with different etching times at room temperature.
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
2 independent · 18 dependent
1
IndependentGaN(B,Al,Ga,In)N alloyGaN-based LED with roughened N-face surface
A device, comprising: a gallium nitride (GaN) based light emitting diode (LED) including at least an n-type layer, an emitting layer, and a p-type layer; wherein light from the emitting layer is extracted through a nitrogen face (N-face) surface of at least one of the layers of the LED, the N-face surface is roughened, and the roughened N-face surface extracts more light out of the LED by scattering or diffracting the light.
2
Dependent← claim 1GaNAl₂O₃GaN-based LED with roughened N-face surface
The device of claim 1, wherein the LED is grown on a sapphire substrate, the p-type layer’s surface is a gallium face (Ga-face), and the n-type layer’s surface is a nitrogen face (N-face).
4
Dependent← claim 1GaNGaN-based LED with roughened N-face surface
The device of claim 1, wherein the N-face surface is roughened by an anisotropic etching.
6
Dependent← claim 1GaNGaN-based LED with roughened N-face surface
The device of claim 1, wherein the N-face surface is roughened into one or more structures.
11
Dependent← claim 1GaNGaN-based LED with roughened N-face surface
The device of claim 1, wherein the extraction effi-ciency of the light out of the roughened N-face surface is increased by more than 100% as compared to an N-face surface that is not roughened.
12
IndependentGaN(B,Al,Ga,In)N alloyGaN-based LED with roughened N-face surface
A method, comprising: fabricating a gallium nitride (GaN) based light emitting diode (LED) including at least an n-type layer, an emitting layer, and a p-type layer; wherein light from the emitting layer is extracted through a nitrogen face (N-face) surface of at least one of the layers of the LED, the N-face surface is roughened, and the roughened N-face surface extracts more light out of the LED by scattering or diffracting the light. 11 12
13
Dependent← claim 12GaNAl₂O₃GaNGaN-based LED with roughened N-face surface
The method of claim 12, wherein the LED is grown on a c-plane GaN or sapphire substrate, the p-type layer’s surface is a gallium face (Ga-face), and the n-type layer’s surface is the N-face surface.
15
Dependent← claim 12GaNGaN-based LED with roughened N-face surface
The method of claim 12, wherein the N-face surface is roughened by an anisotropic etching.
17
Dependent← claim 12GaNGaN-based LED with roughened N-face surface
The method of claim 12, wherein the N-face surface is roughened into one or more structures.
Worked examples
Embodiments described in the patent, grouped by the materials and process steps they use.
Experimental Results
description derived process summary
10 materials5 process steps
Ga-face epitaxial layers grown on c-plane sapphire substrate by MOCVD. Structure comprised of 4 µm-thick undoped and Si-doped GaN layers, a 5-period GaN/InGaN multi-quantum-well (MQW), a 20 nm-thick Mg-doped Al0.2Ga0.8N layer, and 0.3 µm-thick Mg-doped GaN. After MOCVD, sample annealed for p-type activation; p-type metallization with Ag-based electrode as highly reflective p-GaN contact. Thick Au deposited followed by Sn evaporation; wafer bonded to Au-coated Si submount at 280°C (Au/Sn alloy). LLO performed with KrF laser (248 nm) through sapphire substrate, decomposing GaN at GaN/sapphire interface. Sapphire debonded, residual Ga droplets removed with HCl solution. Transferred GaN thinned until Si-doped N-face GaN exposed; n-contact formed on exposed N-face n-GaN. PEC etching used to roughen N-face GaN surface by immersing in KOH electrolyte and irradiating with Xe/Hg lamp. Device isolation by dry etching, dicing, or cleaving.
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
HIGHLY EFFICIENT GALLIUM NITRIDE BASED LIGHT EMITTING DIODES VIA SURFACE ROUGHENING
Tetsuo Fujii, Yan Gao, Evelyn L. Hu, Shuji Nakamura
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US)·Jun. 13, 2023·US
Drawings
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1
FIG. 1 is a schematic cross-section of a conventional LED structure;
FIG. 2
FIG. 2 is a schematic cross-section of a flip-chip type LED structure;
FIG. 3
FIG. 3 is a schematic of a surface roughened LED;
FIG. 4
FIG. 4 is a flowchart that illustrates the processing steps used in the preferred embodiment of the present invention;
FIG. 5
FIGS. 5A, 5B, 5C, 5D, 5E and 5F further illustrate the fabrication steps for the LEDs with surface roughening;
FIG. 6
FIG. 6A shows an LED with a current-blocking layer, while
FIG. 7
FIGS. 7A and 7B are plan-view micrographs of an LLO- LED with a cross-shaped n-electrode;
FIG. 8
FIGS. 8A and 8B are scanning electron micrograph (SEM) images of the N-face of GaN after PEC etching for different etching times;
FIG. 9
FIGS. 9A and 9B show an electroluminescence (EL) spectra from a flat-surface LED and a roughened-surface LED, respectively; and
FIG. 10
performance graph
FIG. 10 is a graph of upward EL output power vs. DC injection current (L-I) characteristics for the LEDs with different etching times at room temperature.
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
2 independent · 18 dependent
1
IndependentGaN(B,Al,Ga,In)N alloyGaN-based LED with roughened N-face surface
A device, comprising: a gallium nitride (GaN) based light emitting diode (LED) including at least an n-type layer, an emitting layer, and a p-type layer; wherein light from the emitting layer is extracted through a nitrogen face (N-face) surface of at least one of the layers of the LED, the N-face surface is roughened, and the roughened N-face surface extracts more light out of the LED by scattering or diffracting the light.
2
Dependent← claim 1GaNAl₂O₃GaN-based LED with roughened N-face surface
The device of claim 1, wherein the LED is grown on a sapphire substrate, the p-type layer’s surface is a gallium face (Ga-face), and the n-type layer’s surface is a nitrogen face (N-face).
4
Dependent← claim 1GaNGaN-based LED with roughened N-face surface
The device of claim 1, wherein the N-face surface is roughened by an anisotropic etching.
6
Dependent← claim 1GaNGaN-based LED with roughened N-face surface
The device of claim 1, wherein the N-face surface is roughened into one or more structures.
11
Dependent← claim 1GaNGaN-based LED with roughened N-face surface
The device of claim 1, wherein the extraction effi-ciency of the light out of the roughened N-face surface is increased by more than 100% as compared to an N-face surface that is not roughened.
12
IndependentGaN(B,Al,Ga,In)N alloyGaN-based LED with roughened N-face surface
A method, comprising: fabricating a gallium nitride (GaN) based light emitting diode (LED) including at least an n-type layer, an emitting layer, and a p-type layer; wherein light from the emitting layer is extracted through a nitrogen face (N-face) surface of at least one of the layers of the LED, the N-face surface is roughened, and the roughened N-face surface extracts more light out of the LED by scattering or diffracting the light. 11 12
13
Dependent← claim 12GaNAl₂O₃GaNGaN-based LED with roughened N-face surface
The method of claim 12, wherein the LED is grown on a c-plane GaN or sapphire substrate, the p-type layer’s surface is a gallium face (Ga-face), and the n-type layer’s surface is the N-face surface.
15
Dependent← claim 12GaNGaN-based LED with roughened N-face surface
The method of claim 12, wherein the N-face surface is roughened by an anisotropic etching.
17
Dependent← claim 12GaNGaN-based LED with roughened N-face surface
The method of claim 12, wherein the N-face surface is roughened into one or more structures.
Worked examples
Embodiments described in the patent, grouped by the materials and process steps they use.
Experimental Results
description derived process summary
10 materials5 process steps
Ga-face epitaxial layers grown on c-plane sapphire substrate by MOCVD. Structure comprised of 4 µm-thick undoped and Si-doped GaN layers, a 5-period GaN/InGaN multi-quantum-well (MQW), a 20 nm-thick Mg-doped Al0.2Ga0.8N layer, and 0.3 µm-thick Mg-doped GaN. After MOCVD, sample annealed for p-type activation; p-type metallization with Ag-based electrode as highly reflective p-GaN contact. Thick Au deposited followed by Sn evaporation; wafer bonded to Au-coated Si submount at 280°C (Au/Sn alloy). LLO performed with KrF laser (248 nm) through sapphire substrate, decomposing GaN at GaN/sapphire interface. Sapphire debonded, residual Ga droplets removed with HCl solution. Transferred GaN thinned until Si-doped N-face GaN exposed; n-contact formed on exposed N-face n-GaN. PEC etching used to roughen N-face GaN surface by immersing in KOH electrolyte and irradiating with Xe/Hg lamp. Device isolation by dry etching, dicing, or cleaving.
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
FIG. 10 is a graph of upward EL output power vs. DC injection current (L-I) characteristics for the LEDs with different etching times at room temperature.
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Study on the formation of dodecagonal pyramid on nitrogen polar GaN surface etched by hot H3PO4. Qi et al., “Study on the formation of dodecagonal pyramid on nitrogen polar GaN surface etched by hot H3PO4,” Applied Physics Letters, 95, 2009, pp. 071114-1-071114-3.
High performance thin-film flip-chip InGaN— GaN light-emitting diodes. Shchekin et al., “High performance thin-film flip-chip InGaN— GaN light-emitting diodes,” Applied Physics Letters 89, 2006, 071109-1-071109-3.
Status and Future of High-Power Light-Emitting Diodes for Solid State Lighting. Krames et al., “Status and Future of High-Power Light-Emitting Diodes for Solid State Lighting”. Journal of Display Technology, vol. 3, No. 2, Jun. 2007, pp. 160-175.
Blue light-emitting diodes with a roughened backside fabricated by wet etching. Lin et al., “Blue light-emitting diodes with a roughened backside fabricated by wet etching”. Applied Physics Letters 95, 2009, pp. 201102-1-201102-3.
Watt-Class High-Output-Power 365 nm Ultraviolet Light-Emotting Diodes. Morita et al., “Watt-Class High-Output-Power 365 nm Ultraviolet Light-Emotting Diodes”. Japanese Journal of Applied Physics, vol. 43, No. 9A, 2004, pp. 5945-5950.
Backside-illuminated photoelectrochemical etching for the fabrication of deeply undercut GaN structures. Stonas et al., “Backside-illuminated photoelectrochemical etching for the fabrication of deeply undercut GaN structures”. Applied Physics Letters, vol. 77, No. 16, Oct. 16, 2000, pp. 2610-2612. Compound Semiconductor: Connecting the Compound Semicon- ductor Community, Mar. 2007, vol. 12, No. 2, pgs. Cover p., 1, and 14-16.
Panasonic to Launch White LED Using GaN Substrate for ‘First Time in Industry’. Nezu, Tadashi, “Panasonic to Launch White LED Using GaN Substrate for ‘First Time in Industry’”. Tech-On!, Mar. 6, 2007, pp. 1-2.
Omnidirectional and compact guided light extraction from Archimedean photonic lattics. Rattier et al., “Omnidirectional and compact guided light extraction from Archimedean photonic lattics”. Applied Physics Letters, vol. 83, No. 7, Aug. 18, 2003, pp. 1283-1285.
Toward Ultrahigh-EfficiencyAluminum Oxide Microcav- ity Light-Emitting Diodes: Guided Mode Extraction by Photonic Crystals. Rattier et al., “Toward Ultrahigh-EfficiencyAluminum Oxide Microcav- ity Light-Emitting Diodes: Guided Mode Extraction by Photonic Crystals”. IEEE Journal on Selected Topics In Quatum Electronics, vol. 8, No. 2, Mar./Apr. 2002, pp. 238-247. Quality by Design: SemiLEDs. 2009, pp. 1-4. http://www.semileds. com/Quality_by_Design_SemiLEDs.htm. EP Office Action dated Apr. 12, 2011, Patent Application No. 11154566.1. CN Office Action dated May 18, 2011, Patent Application No. 200910142642.4. CN Office Action dated Aug. 15, 2008, Patent Application No. 200380110945.9. KR Office Action dated Aug. 27, 2010, Patent Application No. 10-2006-7013748. KR Office Action dated May 11, 2011, Patent Application No. 10-2011-7004218. CN Office Action dated Dec. 14, 2007, Patent Application No. 200380110945.9. EP Office Action dated Mar. 20, 2009, Patent Application No. 03819251.4. CN Office Action dated Mar. 29, 2010, Patent Application No. 200910142642.4. Japanese Office Action dated Feb. 12, 2013, Application No. 2005- 512858 with English translation.
Taguchi, Tsunemasa, The technique for improving white LED lighting system with high-intensity, high-efficiency and long-life,
Japan, Technical Information Institute Co., Ltd, Mar. 27, 2003, p. 19, with English translation. U.S. Pat. No. 6,648,882, Oct. 22, 2002, Motoki, et al. (withdrawn). EP Search Report dated Mar. 20, 2008 for European Patent Appli- cation No. 03819251.4. PCT International Preliminary Examination Report for PCT Appli- cation No. US2003/039211.
Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 Chemistry:. Tripathy et al., “Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 Chemistry:”; J. Vac. Sci. Technol. A, vol. 19, No. 5, Sep./Oct. 2001. Japanese Office Action dated Oct. 20, 2009 for Japanese Patent Application No. 2005-512858 filed on Dec. 9, 2003. Chinese Office Action dated Jan. 5, 2012 for Chinese application No. 200910142642.4 Hellman, E.S., “The Polarity of GaN: a Critical Review”, MRS Internet J. Nitride Semicond. Res, 1998, pp. 1-11, vol. 3 No. 11. Du¨sseldorf Regional Court, In the Name of the People—Judgment dated Nov. 12, 2018 (English Translation). Japanese Office Action (Decision of Refusal) with translation dated Apr. 24, 2012 for Japanese Patent Application No. 2005-512858.
GaN nanotip pyramids formed by anisotropic etching. Weimann et al., “GaN nanotip pyramids formed by anisotropic etching”, Journal of Applied Physics, vol. 94, No. 1, Jul. 2003. English Machine Translation of JP10-233385. JP Office Action dated May 28, 2013 with English machine trans- lation. Benisty, H. et al., “Impact of Planar Microcavity Effects on Light Extraction—Part I: Basic Concepts and Analytical Trends,” IEEE Journal of Quantum Electronics, 34(9), pp. 1612-1631 (1998). Billeb, A. et al., “Microcavity effects in GaN epitaxial films and in Ag/GaN/sapphire structures,” Appl. Phys. Lett. 70(21), pp. 2790- 2792 (1997). Boroditsky, M. et al., “Light-Emitting Diode Extraction Efficiency,” SPIE 3002, pp. 119-122 (1995). Cao, X.A. et al., “Electrical effects of plasma damage in p-GaN,” Appl. Phys. Lett. 75(17), pp. 2569-2571 (1999). Chu, C.-F. et al., “Comparison of p-Side Down and p-Side Up GaN Light-Emitting Diodes Fabricated by Laser Lift-Off,” Jpn. J. Appl. Phys. 42 (Part 2, No. 2B), pp. L147-L150 (2003). Delbeke, D. et al., “High-Efficiency Semiconductor Resonant- Cavity Light-Emitting Diodes:AReview,” IEEE Journal on Selected Topics in Quantum Electronics, 8(2), pp. 189-206 (2002). Guo, X. et al., “Photon Recycling Semiconductor Light Emitting Diode,” IEEE, pp. 23.6.1-23.6.4 (1999). Harle, V. et al., “Advanced Technologies for high efficiency GaInN LEDs for solid state lighting,” Proc. of SPIE 5187, pp. 34-40 (2004). Huh, C. et al., “Improved light-output and electrical performance of InGaN-based light emitting diode by microroughening of the p-GaN surface,” J. of Appl. Phys. 93(11), pp. 9383-9385 (2003). Kawakami, Y. et al., “Dimensionality of Excitons in InGaN-Based Light Emitting Diodes,” Phys. Stat. Sol. (a) 178, 331, pp. 331-336 (2000). Minsky, M.S. et al., “Room-temperature photoenhanced wet etching of GaN,” Appl. Phys. Lett. 68(11), pp. 1531-1533 (1996). Ohba, Y. et al., “A study on strong memory effects for Mg doping in GaN metalorganic chemical vapor deposition,” J. of Crystal Growth 145, pp. 214-218 (1994). Nishida, T. et al., “Efficient and high-power AlGaN-based ultravio- let light-emitting diode grown on bulk GaN,” Appl. Phys. Lett. 79(6), pp. 711-712 (2001). Stocker, D.A., “Crystallographic wet chemical etching of GaN,” Appl. Phys. Lett. 1998, 73(18):2654-2656. Yoshida, S., “Electrochemical etching of a conductive GaN crystal for patterning,” J. of Crystal Growth 181, 1997, pp. 293-296. Japanese Office Action (with English translation) dated Nov. 12, 2013 for Japanese Patent Application No. 2005-512858. Japanese Office Action (with English translation) dated Jun. 3, 2014 for Japanese Patent Application No. 2005-512858. Japanese Office Action (with English translation) dated Jun. 10, 2014 for Japanese Patent Application No. 2011-013852. Stutzmann, M., et al., “Playing with Polarity”, Phys. Stat. Sol (b), 2001, pp. 505-512, vol. 228, No. 2. Tavernier, P.R., et al., “The growth of N-face GaN by MOCVD: effect of Mg, Si, and In”, Journal of Crystal Growth, 2004, pp. 150-158, vol. 264. Japanese Office Action dated Aug. 31, 2010, Patent Application No. 2005-512858. Ng, H. et al., “GaN nanotip pyramids formed by anisotropic etching,” Journal ofApplied Physics, vol. 94, No. 1, Jul. 1, 2003, pp. 650-653. CN Office Action with translation dated Sep. 26, 2010 (Appln. No. 200910142642.4). Palacios, T. et al., “Wet Etching of GaN Grown by Molecular Beam Epitaxy on SI (111)”; Semiconductor Science and Technology, IOP, Bristol, GB, vol. 15, No. 10, Oct. 2000, pp. 96-1000, XP000976071.
Patterning GaN Microstructures by Polarity- Selective Chemical Etching. Ng, Hock M. et al., “Patterning GaN Microstructures by Polarity- Selective Chemical Etching”, Japanese Journal of Applied Physics, Japan Society of Applied Physics, Tokyo, JP, vol. 42, No. 12A, Part 2, Dec. 1, 2003, pp. L1405-L1407, XP001186585. EP Search Report 03819251.4.
FIG. 10 is a graph of upward EL output power vs. DC injection current (L-I) characteristics for the LEDs with different etching times at room temperature.
US 6,294,475 B16,294,475 B1 9/2001 Schubert et al.
US 6,441,403 B16,441,403 B1 8/2002 Chang et al.
US 6,657,236 B16,657,236 B1 12/2003 Thibeault et al.
US 6,744,071 B26,744,071 B2 6/2004 Sano et al.
US 6,847,057 B16,847,057 B1 1/2005 Gardner et al.
US 6,878,563 B26,878,563 B2 4/2005 Bader et al.
US 6,884,740 B26,884,740 B2 4/2005 Hu et al.
US 7,098,589 B27,098,589 B2 8/2006 Erchak et al.
US 7,135,709 B17,135,709 B1 11/2006 Wirth et al.
US 7,190,004 B27,190,004 B2 3/2007 Nagai et al.
US 2002/0190260 A12002/0190260 A1 12/2002 Shen et al.
US 2003/0057444 A12003/0057444 A1 3/2003 Niki et al.
US 2003/0178626 A12003/0178626 A1 9/2003 Sugiyama et al.
US 2003/0213964 A12003/0213964 A1 11/2003 Flynn et al.
US 2003/0222263 A12003/0222263 A1 12/2003 Choi
US 2004/0012032 A12004/0012032 A1 1/2004 Toda et al.
US 2004/0051109 A12004/0051109 A1 3/2004 Ishizaki et al.
US 2005/0082545 A12005/0082545 A1 4/2005 Wierer, Jr. et al.
US 2005/0205884 A12005/0205884 A1 9/2005 Kim et al.
US 2006/0011935 A12006/0011935 A1 1/2006 Krames et al.
US 2006/0163601 A12006/0163601 A1 7/2006 Harle et al.
US 2006/0202226 A12006/0202226 A1 9/2006 Weisbuch et al.
Cited non-patent literature · 22
Palacios et al. Wet etching of GaN grown by molecular beam epitaxy on Si (111), Aug. 17, 2000, pp. 996-1000.
Substrates for gallium nitride epitaxy. European Search Report dated Aug. 5, 2011, Application No. 11154566.1. Liu, L., et al., “Substrates for gallium nitride epitaxy”, Materials Science and Engineernig R: Reports, Elsevier Sequoia S.A., Lausanne, CH, vol. 37, No. 3, Apr. 30, 2002, pp. 61-127, XP004349792. Song, In Jae, “Properties of Etched Ga- and N-Faces of Freestand- ing GaN Substrate Using Inductively Coupled Plasma-Reactive Ion Etching”, Japanese Journal of Applied Physics, vol. 41, No. 3B, Mar. 15, 2002, pp. L317-L319, XP001186604. Japanese Office Action (with English translation) dated May 28, 2005 for Japanese Patent Application No. 2011-013852. European Office Action dated Jun. 14, 2013 for European Patent Application No. 11154566.1. Chinese Office Action (Notification of the Decision of Rejection) with translation dated Aug. 3, 2012 for Chinese Patent Application No. 2009-10142642.4. English Machine Translation of JP10-233385 dated Sep. 2, 1998. PCT International Preliminary Examination Report for PCT Appli- cation No. PCT/US2003/039211 dated Feb. 10, 2006. EP Search Report 03819251.4 dated Mar. 20, 2008.
Wet etching og GaN grown by molecular beam epitaxy on Si(111). Palacios et al., “Wet etching og GaN grown by molecular beam epitaxy on Si(111)”, Aug. 17, 2000, pp. 996-999. Tavernier, P.R. et al., “Mechanics of laser-assisted debonding of films,” J. of Appl. Phys. 89(3), pp. 1527-1536 (2001). Wierer, J.J., et al., “High-power AlGaInN flip-chip light-emitting diodes,” Appl. Phys. Lett. 78(22), pp. 3379-3381 (2001). Wong, W.S. et al., “Damage-free separation of GaN thin films from sapphire substrates,” Appl. Phy. Lett. 72(5), pp. 599-601 (1998). Wong, W.S. et al., “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett. 75(10), pp. 1360-1362 (1999). Wong, W.S. et al., “InxGa1-xN light emitting diodes on Si substrates fabricated by Pd—In metal bonding and laser lift-off,” Appl. Phys. Lett. 77(18), pp. 2822-2824 (2000). Youtsey, C., “Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations,” Appl. Phys. Lett. 73(6), pp. 797-799 (1998).
Photoelectrochemical etching of GaN—AlGaN heterostructures formed on sapphire substrates. Drogan et al., “Photoelectrochemical etching of GaN—AlGaN heterostructures formed on sapphire substrates,” Moldavian Journal of the Physical Sciences, N2, 2002, pp. 156-159.
Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening. Fujii et al., “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Applied Physics Letters, vol. 84, No. 6, Feb. 9, 2004, pp. 855-857.
Efficient wet etching of GaN and p-GaN assisted with chopped UV source. Hwang et al., “Efficient wet etching of GaN and p-GaN assisted with chopped UV source,” Superlattices and Microstructures 35, 2004, pp. 45-57.
30% external quantum efficiency from surface textured, thin-film light-emitting diodes. Schnitzer et al., “30% external quantum efficiency from surface textured, thin-film light-emitting diodes,” Appl. Phys. Lett. 63 (16), Oct. 18, 1993, pp. 2174-2176.
InGaN-based near-ultraviolet and blue-light- emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode. Yamada et al., “InGaN-based near-ultraviolet and blue-light- emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode,” Jpn. J. Appl. Phys., vol. 41, 2002, pp. L1431-L1433.
Study on the formation of dodecagonal pyramid on nitrogen polar GaN surface etched by hot H3PO4. Qi et al., “Study on the formation of dodecagonal pyramid on nitrogen polar GaN surface etched by hot H3PO4,” Applied Physics Letters, 95, 2009, pp. 071114-1-071114-3.
High performance thin-film flip-chip InGaN— GaN light-emitting diodes. Shchekin et al., “High performance thin-film flip-chip InGaN— GaN light-emitting diodes,” Applied Physics Letters 89, 2006, 071109-1-071109-3.
Status and Future of High-Power Light-Emitting Diodes for Solid State Lighting. Krames et al., “Status and Future of High-Power Light-Emitting Diodes for Solid State Lighting”. Journal of Display Technology, vol. 3, No. 2, Jun. 2007, pp. 160-175.
Blue light-emitting diodes with a roughened backside fabricated by wet etching. Lin et al., “Blue light-emitting diodes with a roughened backside fabricated by wet etching”. Applied Physics Letters 95, 2009, pp. 201102-1-201102-3.
Watt-Class High-Output-Power 365 nm Ultraviolet Light-Emotting Diodes. Morita et al., “Watt-Class High-Output-Power 365 nm Ultraviolet Light-Emotting Diodes”. Japanese Journal of Applied Physics, vol. 43, No. 9A, 2004, pp. 5945-5950.
Backside-illuminated photoelectrochemical etching for the fabrication of deeply undercut GaN structures. Stonas et al., “Backside-illuminated photoelectrochemical etching for the fabrication of deeply undercut GaN structures”. Applied Physics Letters, vol. 77, No. 16, Oct. 16, 2000, pp. 2610-2612. Compound Semiconductor: Connecting the Compound Semicon- ductor Community, Mar. 2007, vol. 12, No. 2, pgs. Cover p., 1, and 14-16.
Panasonic to Launch White LED Using GaN Substrate for ‘First Time in Industry’. Nezu, Tadashi, “Panasonic to Launch White LED Using GaN Substrate for ‘First Time in Industry’”. Tech-On!, Mar. 6, 2007, pp. 1-2.
Omnidirectional and compact guided light extraction from Archimedean photonic lattics. Rattier et al., “Omnidirectional and compact guided light extraction from Archimedean photonic lattics”. Applied Physics Letters, vol. 83, No. 7, Aug. 18, 2003, pp. 1283-1285.
Toward Ultrahigh-EfficiencyAluminum Oxide Microcav- ity Light-Emitting Diodes: Guided Mode Extraction by Photonic Crystals. Rattier et al., “Toward Ultrahigh-EfficiencyAluminum Oxide Microcav- ity Light-Emitting Diodes: Guided Mode Extraction by Photonic Crystals”. IEEE Journal on Selected Topics In Quatum Electronics, vol. 8, No. 2, Mar./Apr. 2002, pp. 238-247. Quality by Design: SemiLEDs. 2009, pp. 1-4. http://www.semileds. com/Quality_by_Design_SemiLEDs.htm. EP Office Action dated Apr. 12, 2011, Patent Application No. 11154566.1. CN Office Action dated May 18, 2011, Patent Application No. 200910142642.4. CN Office Action dated Aug. 15, 2008, Patent Application No. 200380110945.9. KR Office Action dated Aug. 27, 2010, Patent Application No. 10-2006-7013748. KR Office Action dated May 11, 2011, Patent Application No. 10-2011-7004218. CN Office Action dated Dec. 14, 2007, Patent Application No. 200380110945.9. EP Office Action dated Mar. 20, 2009, Patent Application No. 03819251.4. CN Office Action dated Mar. 29, 2010, Patent Application No. 200910142642.4. Japanese Office Action dated Feb. 12, 2013, Application No. 2005- 512858 with English translation.
Taguchi, Tsunemasa, The technique for improving white LED lighting system with high-intensity, high-efficiency and long-life,
Japan, Technical Information Institute Co., Ltd, Mar. 27, 2003, p. 19, with English translation. U.S. Pat. No. 6,648,882, Oct. 22, 2002, Motoki, et al. (withdrawn). EP Search Report dated Mar. 20, 2008 for European Patent Appli- cation No. 03819251.4. PCT International Preliminary Examination Report for PCT Appli- cation No. US2003/039211.
Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 Chemistry:. Tripathy et al., “Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 Chemistry:”; J. Vac. Sci. Technol. A, vol. 19, No. 5, Sep./Oct. 2001. Japanese Office Action dated Oct. 20, 2009 for Japanese Patent Application No. 2005-512858 filed on Dec. 9, 2003. Chinese Office Action dated Jan. 5, 2012 for Chinese application No. 200910142642.4 Hellman, E.S., “The Polarity of GaN: a Critical Review”, MRS Internet J. Nitride Semicond. Res, 1998, pp. 1-11, vol. 3 No. 11. Du¨sseldorf Regional Court, In the Name of the People—Judgment dated Nov. 12, 2018 (English Translation). Japanese Office Action (Decision of Refusal) with translation dated Apr. 24, 2012 for Japanese Patent Application No. 2005-512858.
GaN nanotip pyramids formed by anisotropic etching. Weimann et al., “GaN nanotip pyramids formed by anisotropic etching”, Journal of Applied Physics, vol. 94, No. 1, Jul. 2003. English Machine Translation of JP10-233385. JP Office Action dated May 28, 2013 with English machine trans- lation. Benisty, H. et al., “Impact of Planar Microcavity Effects on Light Extraction—Part I: Basic Concepts and Analytical Trends,” IEEE Journal of Quantum Electronics, 34(9), pp. 1612-1631 (1998). Billeb, A. et al., “Microcavity effects in GaN epitaxial films and in Ag/GaN/sapphire structures,” Appl. Phys. Lett. 70(21), pp. 2790- 2792 (1997). Boroditsky, M. et al., “Light-Emitting Diode Extraction Efficiency,” SPIE 3002, pp. 119-122 (1995). Cao, X.A. et al., “Electrical effects of plasma damage in p-GaN,” Appl. Phys. Lett. 75(17), pp. 2569-2571 (1999). Chu, C.-F. et al., “Comparison of p-Side Down and p-Side Up GaN Light-Emitting Diodes Fabricated by Laser Lift-Off,” Jpn. J. Appl. Phys. 42 (Part 2, No. 2B), pp. L147-L150 (2003). Delbeke, D. et al., “High-Efficiency Semiconductor Resonant- Cavity Light-Emitting Diodes:AReview,” IEEE Journal on Selected Topics in Quantum Electronics, 8(2), pp. 189-206 (2002). Guo, X. et al., “Photon Recycling Semiconductor Light Emitting Diode,” IEEE, pp. 23.6.1-23.6.4 (1999). Harle, V. et al., “Advanced Technologies for high efficiency GaInN LEDs for solid state lighting,” Proc. of SPIE 5187, pp. 34-40 (2004). Huh, C. et al., “Improved light-output and electrical performance of InGaN-based light emitting diode by microroughening of the p-GaN surface,” J. of Appl. Phys. 93(11), pp. 9383-9385 (2003). Kawakami, Y. et al., “Dimensionality of Excitons in InGaN-Based Light Emitting Diodes,” Phys. Stat. Sol. (a) 178, 331, pp. 331-336 (2000). Minsky, M.S. et al., “Room-temperature photoenhanced wet etching of GaN,” Appl. Phys. Lett. 68(11), pp. 1531-1533 (1996). Ohba, Y. et al., “A study on strong memory effects for Mg doping in GaN metalorganic chemical vapor deposition,” J. of Crystal Growth 145, pp. 214-218 (1994). Nishida, T. et al., “Efficient and high-power AlGaN-based ultravio- let light-emitting diode grown on bulk GaN,” Appl. Phys. Lett. 79(6), pp. 711-712 (2001). Stocker, D.A., “Crystallographic wet chemical etching of GaN,” Appl. Phys. Lett. 1998, 73(18):2654-2656. Yoshida, S., “Electrochemical etching of a conductive GaN crystal for patterning,” J. of Crystal Growth 181, 1997, pp. 293-296. Japanese Office Action (with English translation) dated Nov. 12, 2013 for Japanese Patent Application No. 2005-512858. Japanese Office Action (with English translation) dated Jun. 3, 2014 for Japanese Patent Application No. 2005-512858. Japanese Office Action (with English translation) dated Jun. 10, 2014 for Japanese Patent Application No. 2011-013852. Stutzmann, M., et al., “Playing with Polarity”, Phys. Stat. Sol (b), 2001, pp. 505-512, vol. 228, No. 2. Tavernier, P.R., et al., “The growth of N-face GaN by MOCVD: effect of Mg, Si, and In”, Journal of Crystal Growth, 2004, pp. 150-158, vol. 264. Japanese Office Action dated Aug. 31, 2010, Patent Application No. 2005-512858. Ng, H. et al., “GaN nanotip pyramids formed by anisotropic etching,” Journal ofApplied Physics, vol. 94, No. 1, Jul. 1, 2003, pp. 650-653. CN Office Action with translation dated Sep. 26, 2010 (Appln. No. 200910142642.4). Palacios, T. et al., “Wet Etching of GaN Grown by Molecular Beam Epitaxy on SI (111)”; Semiconductor Science and Technology, IOP, Bristol, GB, vol. 15, No. 10, Oct. 2000, pp. 96-1000, XP000976071.
Patterning GaN Microstructures by Polarity- Selective Chemical Etching. Ng, Hock M. et al., “Patterning GaN Microstructures by Polarity- Selective Chemical Etching”, Japanese Journal of Applied Physics, Japan Society of Applied Physics, Tokyo, JP, vol. 42, No. 12A, Part 2, Dec. 1, 2003, pp. L1405-L1407, XP001186585. EP Search Report 03819251.4.
FIG. 10 is a graph of upward EL output power vs. DC injection current (L-I) characteristics for the LEDs with different etching times at room temperature.
US 6,294,475 B16,294,475 B1 9/2001 Schubert et al.
US 6,441,403 B16,441,403 B1 8/2002 Chang et al.
US 6,657,236 B16,657,236 B1 12/2003 Thibeault et al.
US 6,744,071 B26,744,071 B2 6/2004 Sano et al.
US 6,847,057 B16,847,057 B1 1/2005 Gardner et al.
US 6,878,563 B26,878,563 B2 4/2005 Bader et al.
US 6,884,740 B26,884,740 B2 4/2005 Hu et al.
US 7,098,589 B27,098,589 B2 8/2006 Erchak et al.
US 7,135,709 B17,135,709 B1 11/2006 Wirth et al.
US 7,190,004 B27,190,004 B2 3/2007 Nagai et al.
US 2002/0190260 A12002/0190260 A1 12/2002 Shen et al.
US 2003/0057444 A12003/0057444 A1 3/2003 Niki et al.
US 2003/0178626 A12003/0178626 A1 9/2003 Sugiyama et al.
US 2003/0213964 A12003/0213964 A1 11/2003 Flynn et al.
US 2003/0222263 A12003/0222263 A1 12/2003 Choi
US 2004/0012032 A12004/0012032 A1 1/2004 Toda et al.
US 2004/0051109 A12004/0051109 A1 3/2004 Ishizaki et al.
US 2005/0082545 A12005/0082545 A1 4/2005 Wierer, Jr. et al.
US 2005/0205884 A12005/0205884 A1 9/2005 Kim et al.
US 2006/0011935 A12006/0011935 A1 1/2006 Krames et al.
US 2006/0163601 A12006/0163601 A1 7/2006 Harle et al.
US 2006/0202226 A12006/0202226 A1 9/2006 Weisbuch et al.
Cited non-patent literature · 22
Palacios et al. Wet etching of GaN grown by molecular beam epitaxy on Si (111), Aug. 17, 2000, pp. 996-1000.
Substrates for gallium nitride epitaxy. European Search Report dated Aug. 5, 2011, Application No. 11154566.1. Liu, L., et al., “Substrates for gallium nitride epitaxy”, Materials Science and Engineernig R: Reports, Elsevier Sequoia S.A., Lausanne, CH, vol. 37, No. 3, Apr. 30, 2002, pp. 61-127, XP004349792. Song, In Jae, “Properties of Etched Ga- and N-Faces of Freestand- ing GaN Substrate Using Inductively Coupled Plasma-Reactive Ion Etching”, Japanese Journal of Applied Physics, vol. 41, No. 3B, Mar. 15, 2002, pp. L317-L319, XP001186604. Japanese Office Action (with English translation) dated May 28, 2005 for Japanese Patent Application No. 2011-013852. European Office Action dated Jun. 14, 2013 for European Patent Application No. 11154566.1. Chinese Office Action (Notification of the Decision of Rejection) with translation dated Aug. 3, 2012 for Chinese Patent Application No. 2009-10142642.4. English Machine Translation of JP10-233385 dated Sep. 2, 1998. PCT International Preliminary Examination Report for PCT Appli- cation No. PCT/US2003/039211 dated Feb. 10, 2006. EP Search Report 03819251.4 dated Mar. 20, 2008.
Wet etching og GaN grown by molecular beam epitaxy on Si(111). Palacios et al., “Wet etching og GaN grown by molecular beam epitaxy on Si(111)”, Aug. 17, 2000, pp. 996-999. Tavernier, P.R. et al., “Mechanics of laser-assisted debonding of films,” J. of Appl. Phys. 89(3), pp. 1527-1536 (2001). Wierer, J.J., et al., “High-power AlGaInN flip-chip light-emitting diodes,” Appl. Phys. Lett. 78(22), pp. 3379-3381 (2001). Wong, W.S. et al., “Damage-free separation of GaN thin films from sapphire substrates,” Appl. Phy. Lett. 72(5), pp. 599-601 (1998). Wong, W.S. et al., “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett. 75(10), pp. 1360-1362 (1999). Wong, W.S. et al., “InxGa1-xN light emitting diodes on Si substrates fabricated by Pd—In metal bonding and laser lift-off,” Appl. Phys. Lett. 77(18), pp. 2822-2824 (2000). Youtsey, C., “Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations,” Appl. Phys. Lett. 73(6), pp. 797-799 (1998).
Photoelectrochemical etching of GaN—AlGaN heterostructures formed on sapphire substrates. Drogan et al., “Photoelectrochemical etching of GaN—AlGaN heterostructures formed on sapphire substrates,” Moldavian Journal of the Physical Sciences, N2, 2002, pp. 156-159.
Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening. Fujii et al., “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Applied Physics Letters, vol. 84, No. 6, Feb. 9, 2004, pp. 855-857.
Efficient wet etching of GaN and p-GaN assisted with chopped UV source. Hwang et al., “Efficient wet etching of GaN and p-GaN assisted with chopped UV source,” Superlattices and Microstructures 35, 2004, pp. 45-57.
30% external quantum efficiency from surface textured, thin-film light-emitting diodes. Schnitzer et al., “30% external quantum efficiency from surface textured, thin-film light-emitting diodes,” Appl. Phys. Lett. 63 (16), Oct. 18, 1993, pp. 2174-2176.
InGaN-based near-ultraviolet and blue-light- emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode. Yamada et al., “InGaN-based near-ultraviolet and blue-light- emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode,” Jpn. J. Appl. Phys., vol. 41, 2002, pp. L1431-L1433.
Study on the formation of dodecagonal pyramid on nitrogen polar GaN surface etched by hot H3PO4. Qi et al., “Study on the formation of dodecagonal pyramid on nitrogen polar GaN surface etched by hot H3PO4,” Applied Physics Letters, 95, 2009, pp. 071114-1-071114-3.
High performance thin-film flip-chip InGaN— GaN light-emitting diodes. Shchekin et al., “High performance thin-film flip-chip InGaN— GaN light-emitting diodes,” Applied Physics Letters 89, 2006, 071109-1-071109-3.
Status and Future of High-Power Light-Emitting Diodes for Solid State Lighting. Krames et al., “Status and Future of High-Power Light-Emitting Diodes for Solid State Lighting”. Journal of Display Technology, vol. 3, No. 2, Jun. 2007, pp. 160-175.
Blue light-emitting diodes with a roughened backside fabricated by wet etching. Lin et al., “Blue light-emitting diodes with a roughened backside fabricated by wet etching”. Applied Physics Letters 95, 2009, pp. 201102-1-201102-3.
Watt-Class High-Output-Power 365 nm Ultraviolet Light-Emotting Diodes. Morita et al., “Watt-Class High-Output-Power 365 nm Ultraviolet Light-Emotting Diodes”. Japanese Journal of Applied Physics, vol. 43, No. 9A, 2004, pp. 5945-5950.
Backside-illuminated photoelectrochemical etching for the fabrication of deeply undercut GaN structures. Stonas et al., “Backside-illuminated photoelectrochemical etching for the fabrication of deeply undercut GaN structures”. Applied Physics Letters, vol. 77, No. 16, Oct. 16, 2000, pp. 2610-2612. Compound Semiconductor: Connecting the Compound Semicon- ductor Community, Mar. 2007, vol. 12, No. 2, pgs. Cover p., 1, and 14-16.
Panasonic to Launch White LED Using GaN Substrate for ‘First Time in Industry’. Nezu, Tadashi, “Panasonic to Launch White LED Using GaN Substrate for ‘First Time in Industry’”. Tech-On!, Mar. 6, 2007, pp. 1-2.
Omnidirectional and compact guided light extraction from Archimedean photonic lattics. Rattier et al., “Omnidirectional and compact guided light extraction from Archimedean photonic lattics”. Applied Physics Letters, vol. 83, No. 7, Aug. 18, 2003, pp. 1283-1285.
Toward Ultrahigh-EfficiencyAluminum Oxide Microcav- ity Light-Emitting Diodes: Guided Mode Extraction by Photonic Crystals. Rattier et al., “Toward Ultrahigh-EfficiencyAluminum Oxide Microcav- ity Light-Emitting Diodes: Guided Mode Extraction by Photonic Crystals”. IEEE Journal on Selected Topics In Quatum Electronics, vol. 8, No. 2, Mar./Apr. 2002, pp. 238-247. Quality by Design: SemiLEDs. 2009, pp. 1-4. http://www.semileds. com/Quality_by_Design_SemiLEDs.htm. EP Office Action dated Apr. 12, 2011, Patent Application No. 11154566.1. CN Office Action dated May 18, 2011, Patent Application No. 200910142642.4. CN Office Action dated Aug. 15, 2008, Patent Application No. 200380110945.9. KR Office Action dated Aug. 27, 2010, Patent Application No. 10-2006-7013748. KR Office Action dated May 11, 2011, Patent Application No. 10-2011-7004218. CN Office Action dated Dec. 14, 2007, Patent Application No. 200380110945.9. EP Office Action dated Mar. 20, 2009, Patent Application No. 03819251.4. CN Office Action dated Mar. 29, 2010, Patent Application No. 200910142642.4. Japanese Office Action dated Feb. 12, 2013, Application No. 2005- 512858 with English translation.
Taguchi, Tsunemasa, The technique for improving white LED lighting system with high-intensity, high-efficiency and long-life,
Japan, Technical Information Institute Co., Ltd, Mar. 27, 2003, p. 19, with English translation. U.S. Pat. No. 6,648,882, Oct. 22, 2002, Motoki, et al. (withdrawn). EP Search Report dated Mar. 20, 2008 for European Patent Appli- cation No. 03819251.4. PCT International Preliminary Examination Report for PCT Appli- cation No. US2003/039211.
Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 Chemistry:. Tripathy et al., “Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 Chemistry:”; J. Vac. Sci. Technol. A, vol. 19, No. 5, Sep./Oct. 2001. Japanese Office Action dated Oct. 20, 2009 for Japanese Patent Application No. 2005-512858 filed on Dec. 9, 2003. Chinese Office Action dated Jan. 5, 2012 for Chinese application No. 200910142642.4 Hellman, E.S., “The Polarity of GaN: a Critical Review”, MRS Internet J. Nitride Semicond. Res, 1998, pp. 1-11, vol. 3 No. 11. Du¨sseldorf Regional Court, In the Name of the People—Judgment dated Nov. 12, 2018 (English Translation). Japanese Office Action (Decision of Refusal) with translation dated Apr. 24, 2012 for Japanese Patent Application No. 2005-512858.
GaN nanotip pyramids formed by anisotropic etching. Weimann et al., “GaN nanotip pyramids formed by anisotropic etching”, Journal of Applied Physics, vol. 94, No. 1, Jul. 2003. English Machine Translation of JP10-233385. JP Office Action dated May 28, 2013 with English machine trans- lation. Benisty, H. et al., “Impact of Planar Microcavity Effects on Light Extraction—Part I: Basic Concepts and Analytical Trends,” IEEE Journal of Quantum Electronics, 34(9), pp. 1612-1631 (1998). Billeb, A. et al., “Microcavity effects in GaN epitaxial films and in Ag/GaN/sapphire structures,” Appl. Phys. Lett. 70(21), pp. 2790- 2792 (1997). Boroditsky, M. et al., “Light-Emitting Diode Extraction Efficiency,” SPIE 3002, pp. 119-122 (1995). Cao, X.A. et al., “Electrical effects of plasma damage in p-GaN,” Appl. Phys. Lett. 75(17), pp. 2569-2571 (1999). Chu, C.-F. et al., “Comparison of p-Side Down and p-Side Up GaN Light-Emitting Diodes Fabricated by Laser Lift-Off,” Jpn. J. Appl. Phys. 42 (Part 2, No. 2B), pp. L147-L150 (2003). Delbeke, D. et al., “High-Efficiency Semiconductor Resonant- Cavity Light-Emitting Diodes:AReview,” IEEE Journal on Selected Topics in Quantum Electronics, 8(2), pp. 189-206 (2002). Guo, X. et al., “Photon Recycling Semiconductor Light Emitting Diode,” IEEE, pp. 23.6.1-23.6.4 (1999). Harle, V. et al., “Advanced Technologies for high efficiency GaInN LEDs for solid state lighting,” Proc. of SPIE 5187, pp. 34-40 (2004). Huh, C. et al., “Improved light-output and electrical performance of InGaN-based light emitting diode by microroughening of the p-GaN surface,” J. of Appl. Phys. 93(11), pp. 9383-9385 (2003). Kawakami, Y. et al., “Dimensionality of Excitons in InGaN-Based Light Emitting Diodes,” Phys. Stat. Sol. (a) 178, 331, pp. 331-336 (2000). Minsky, M.S. et al., “Room-temperature photoenhanced wet etching of GaN,” Appl. Phys. Lett. 68(11), pp. 1531-1533 (1996). Ohba, Y. et al., “A study on strong memory effects for Mg doping in GaN metalorganic chemical vapor deposition,” J. of Crystal Growth 145, pp. 214-218 (1994). Nishida, T. et al., “Efficient and high-power AlGaN-based ultravio- let light-emitting diode grown on bulk GaN,” Appl. Phys. Lett. 79(6), pp. 711-712 (2001). Stocker, D.A., “Crystallographic wet chemical etching of GaN,” Appl. Phys. Lett. 1998, 73(18):2654-2656. Yoshida, S., “Electrochemical etching of a conductive GaN crystal for patterning,” J. of Crystal Growth 181, 1997, pp. 293-296. Japanese Office Action (with English translation) dated Nov. 12, 2013 for Japanese Patent Application No. 2005-512858. Japanese Office Action (with English translation) dated Jun. 3, 2014 for Japanese Patent Application No. 2005-512858. Japanese Office Action (with English translation) dated Jun. 10, 2014 for Japanese Patent Application No. 2011-013852. Stutzmann, M., et al., “Playing with Polarity”, Phys. Stat. Sol (b), 2001, pp. 505-512, vol. 228, No. 2. Tavernier, P.R., et al., “The growth of N-face GaN by MOCVD: effect of Mg, Si, and In”, Journal of Crystal Growth, 2004, pp. 150-158, vol. 264. Japanese Office Action dated Aug. 31, 2010, Patent Application No. 2005-512858. Ng, H. et al., “GaN nanotip pyramids formed by anisotropic etching,” Journal ofApplied Physics, vol. 94, No. 1, Jul. 1, 2003, pp. 650-653. CN Office Action with translation dated Sep. 26, 2010 (Appln. No. 200910142642.4). Palacios, T. et al., “Wet Etching of GaN Grown by Molecular Beam Epitaxy on SI (111)”; Semiconductor Science and Technology, IOP, Bristol, GB, vol. 15, No. 10, Oct. 2000, pp. 96-1000, XP000976071.
Patterning GaN Microstructures by Polarity- Selective Chemical Etching. Ng, Hock M. et al., “Patterning GaN Microstructures by Polarity- Selective Chemical Etching”, Japanese Journal of Applied Physics, Japan Society of Applied Physics, Tokyo, JP, vol. 42, No. 12A, Part 2, Dec. 1, 2003, pp. L1405-L1407, XP001186585. EP Search Report 03819251.4.
FIG. 10 is a graph of upward EL output power vs. DC injection current (L-I) characteristics for the LEDs with different etching times at room temperature.
US 6,294,475 B16,294,475 B1 9/2001 Schubert et al.
US 6,441,403 B16,441,403 B1 8/2002 Chang et al.
US 6,657,236 B16,657,236 B1 12/2003 Thibeault et al.
US 6,744,071 B26,744,071 B2 6/2004 Sano et al.
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Photoelectrochemical etching of GaN—AlGaN heterostructures formed on sapphire substrates. Drogan et al., “Photoelectrochemical etching of GaN—AlGaN heterostructures formed on sapphire substrates,” Moldavian Journal of the Physical Sciences, N2, 2002, pp. 156-159.
Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening. Fujii et al., “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Applied Physics Letters, vol. 84, No. 6, Feb. 9, 2004, pp. 855-857.
Efficient wet etching of GaN and p-GaN assisted with chopped UV source. Hwang et al., “Efficient wet etching of GaN and p-GaN assisted with chopped UV source,” Superlattices and Microstructures 35, 2004, pp. 45-57.
30% external quantum efficiency from surface textured, thin-film light-emitting diodes. Schnitzer et al., “30% external quantum efficiency from surface textured, thin-film light-emitting diodes,” Appl. Phys. Lett. 63 (16), Oct. 18, 1993, pp. 2174-2176.
InGaN-based near-ultraviolet and blue-light- emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode. Yamada et al., “InGaN-based near-ultraviolet and blue-light- emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode,” Jpn. J. Appl. Phys., vol. 41, 2002, pp. L1431-L1433.
Study on the formation of dodecagonal pyramid on nitrogen polar GaN surface etched by hot H3PO4. Qi et al., “Study on the formation of dodecagonal pyramid on nitrogen polar GaN surface etched by hot H3PO4,” Applied Physics Letters, 95, 2009, pp. 071114-1-071114-3.
High performance thin-film flip-chip InGaN— GaN light-emitting diodes. Shchekin et al., “High performance thin-film flip-chip InGaN— GaN light-emitting diodes,” Applied Physics Letters 89, 2006, 071109-1-071109-3.
Status and Future of High-Power Light-Emitting Diodes for Solid State Lighting. Krames et al., “Status and Future of High-Power Light-Emitting Diodes for Solid State Lighting”. Journal of Display Technology, vol. 3, No. 2, Jun. 2007, pp. 160-175.
Blue light-emitting diodes with a roughened backside fabricated by wet etching. Lin et al., “Blue light-emitting diodes with a roughened backside fabricated by wet etching”. Applied Physics Letters 95, 2009, pp. 201102-1-201102-3.
Watt-Class High-Output-Power 365 nm Ultraviolet Light-Emotting Diodes. Morita et al., “Watt-Class High-Output-Power 365 nm Ultraviolet Light-Emotting Diodes”. Japanese Journal of Applied Physics, vol. 43, No. 9A, 2004, pp. 5945-5950.
Backside-illuminated photoelectrochemical etching for the fabrication of deeply undercut GaN structures. Stonas et al., “Backside-illuminated photoelectrochemical etching for the fabrication of deeply undercut GaN structures”. Applied Physics Letters, vol. 77, No. 16, Oct. 16, 2000, pp. 2610-2612. Compound Semiconductor: Connecting the Compound Semicon- ductor Community, Mar. 2007, vol. 12, No. 2, pgs. Cover p., 1, and 14-16.
Panasonic to Launch White LED Using GaN Substrate for ‘First Time in Industry’. Nezu, Tadashi, “Panasonic to Launch White LED Using GaN Substrate for ‘First Time in Industry’”. Tech-On!, Mar. 6, 2007, pp. 1-2.
Omnidirectional and compact guided light extraction from Archimedean photonic lattics. Rattier et al., “Omnidirectional and compact guided light extraction from Archimedean photonic lattics”. Applied Physics Letters, vol. 83, No. 7, Aug. 18, 2003, pp. 1283-1285.
Toward Ultrahigh-EfficiencyAluminum Oxide Microcav- ity Light-Emitting Diodes: Guided Mode Extraction by Photonic Crystals. Rattier et al., “Toward Ultrahigh-EfficiencyAluminum Oxide Microcav- ity Light-Emitting Diodes: Guided Mode Extraction by Photonic Crystals”. IEEE Journal on Selected Topics In Quatum Electronics, vol. 8, No. 2, Mar./Apr. 2002, pp. 238-247. Quality by Design: SemiLEDs. 2009, pp. 1-4. http://www.semileds. com/Quality_by_Design_SemiLEDs.htm. EP Office Action dated Apr. 12, 2011, Patent Application No. 11154566.1. CN Office Action dated May 18, 2011, Patent Application No. 200910142642.4. CN Office Action dated Aug. 15, 2008, Patent Application No. 200380110945.9. KR Office Action dated Aug. 27, 2010, Patent Application No. 10-2006-7013748. KR Office Action dated May 11, 2011, Patent Application No. 10-2011-7004218. CN Office Action dated Dec. 14, 2007, Patent Application No. 200380110945.9. EP Office Action dated Mar. 20, 2009, Patent Application No. 03819251.4. CN Office Action dated Mar. 29, 2010, Patent Application No. 200910142642.4. Japanese Office Action dated Feb. 12, 2013, Application No. 2005- 512858 with English translation.
Taguchi, Tsunemasa, The technique for improving white LED lighting system with high-intensity, high-efficiency and long-life,
Japan, Technical Information Institute Co., Ltd, Mar. 27, 2003, p. 19, with English translation. U.S. Pat. No. 6,648,882, Oct. 22, 2002, Motoki, et al. (withdrawn). EP Search Report dated Mar. 20, 2008 for European Patent Appli- cation No. 03819251.4. PCT International Preliminary Examination Report for PCT Appli- cation No. US2003/039211.
Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 Chemistry:. Tripathy et al., “Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 Chemistry:”; J. Vac. Sci. Technol. A, vol. 19, No. 5, Sep./Oct. 2001. Japanese Office Action dated Oct. 20, 2009 for Japanese Patent Application No. 2005-512858 filed on Dec. 9, 2003. Chinese Office Action dated Jan. 5, 2012 for Chinese application No. 200910142642.4 Hellman, E.S., “The Polarity of GaN: a Critical Review”, MRS Internet J. Nitride Semicond. Res, 1998, pp. 1-11, vol. 3 No. 11. Du¨sseldorf Regional Court, In the Name of the People—Judgment dated Nov. 12, 2018 (English Translation). Japanese Office Action (Decision of Refusal) with translation dated Apr. 24, 2012 for Japanese Patent Application No. 2005-512858.
GaN nanotip pyramids formed by anisotropic etching. Weimann et al., “GaN nanotip pyramids formed by anisotropic etching”, Journal of Applied Physics, vol. 94, No. 1, Jul. 2003. English Machine Translation of JP10-233385. JP Office Action dated May 28, 2013 with English machine trans- lation. Benisty, H. et al., “Impact of Planar Microcavity Effects on Light Extraction—Part I: Basic Concepts and Analytical Trends,” IEEE Journal of Quantum Electronics, 34(9), pp. 1612-1631 (1998). Billeb, A. et al., “Microcavity effects in GaN epitaxial films and in Ag/GaN/sapphire structures,” Appl. Phys. Lett. 70(21), pp. 2790- 2792 (1997). Boroditsky, M. et al., “Light-Emitting Diode Extraction Efficiency,” SPIE 3002, pp. 119-122 (1995). Cao, X.A. et al., “Electrical effects of plasma damage in p-GaN,” Appl. Phys. Lett. 75(17), pp. 2569-2571 (1999). Chu, C.-F. et al., “Comparison of p-Side Down and p-Side Up GaN Light-Emitting Diodes Fabricated by Laser Lift-Off,” Jpn. J. Appl. Phys. 42 (Part 2, No. 2B), pp. L147-L150 (2003). Delbeke, D. et al., “High-Efficiency Semiconductor Resonant- Cavity Light-Emitting Diodes:AReview,” IEEE Journal on Selected Topics in Quantum Electronics, 8(2), pp. 189-206 (2002). Guo, X. et al., “Photon Recycling Semiconductor Light Emitting Diode,” IEEE, pp. 23.6.1-23.6.4 (1999). Harle, V. et al., “Advanced Technologies for high efficiency GaInN LEDs for solid state lighting,” Proc. of SPIE 5187, pp. 34-40 (2004). Huh, C. et al., “Improved light-output and electrical performance of InGaN-based light emitting diode by microroughening of the p-GaN surface,” J. of Appl. Phys. 93(11), pp. 9383-9385 (2003). Kawakami, Y. et al., “Dimensionality of Excitons in InGaN-Based Light Emitting Diodes,” Phys. Stat. Sol. (a) 178, 331, pp. 331-336 (2000). Minsky, M.S. et al., “Room-temperature photoenhanced wet etching of GaN,” Appl. Phys. Lett. 68(11), pp. 1531-1533 (1996). Ohba, Y. et al., “A study on strong memory effects for Mg doping in GaN metalorganic chemical vapor deposition,” J. of Crystal Growth 145, pp. 214-218 (1994). Nishida, T. et al., “Efficient and high-power AlGaN-based ultravio- let light-emitting diode grown on bulk GaN,” Appl. Phys. Lett. 79(6), pp. 711-712 (2001). Stocker, D.A., “Crystallographic wet chemical etching of GaN,” Appl. Phys. Lett. 1998, 73(18):2654-2656. Yoshida, S., “Electrochemical etching of a conductive GaN crystal for patterning,” J. of Crystal Growth 181, 1997, pp. 293-296. Japanese Office Action (with English translation) dated Nov. 12, 2013 for Japanese Patent Application No. 2005-512858. Japanese Office Action (with English translation) dated Jun. 3, 2014 for Japanese Patent Application No. 2005-512858. Japanese Office Action (with English translation) dated Jun. 10, 2014 for Japanese Patent Application No. 2011-013852. Stutzmann, M., et al., “Playing with Polarity”, Phys. Stat. Sol (b), 2001, pp. 505-512, vol. 228, No. 2. Tavernier, P.R., et al., “The growth of N-face GaN by MOCVD: effect of Mg, Si, and In”, Journal of Crystal Growth, 2004, pp. 150-158, vol. 264. Japanese Office Action dated Aug. 31, 2010, Patent Application No. 2005-512858. Ng, H. et al., “GaN nanotip pyramids formed by anisotropic etching,” Journal ofApplied Physics, vol. 94, No. 1, Jul. 1, 2003, pp. 650-653. CN Office Action with translation dated Sep. 26, 2010 (Appln. No. 200910142642.4). Palacios, T. et al., “Wet Etching of GaN Grown by Molecular Beam Epitaxy on SI (111)”; Semiconductor Science and Technology, IOP, Bristol, GB, vol. 15, No. 10, Oct. 2000, pp. 96-1000, XP000976071.
Patterning GaN Microstructures by Polarity- Selective Chemical Etching. Ng, Hock M. et al., “Patterning GaN Microstructures by Polarity- Selective Chemical Etching”, Japanese Journal of Applied Physics, Japan Society of Applied Physics, Tokyo, JP, vol. 42, No. 12A, Part 2, Dec. 1, 2003, pp. L1405-L1407, XP001186585. EP Search Report 03819251.4.
