Patent
US 11,342,482GALLIUM NITRIDE CROSS-GAP LIGHT EMITTERS BASED ON UNIPOLAR-DOPED TUNNELING STRUCTURES
Elliott R. Brown
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,342,482Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2. [0039] FIG s. 20A-20C depicts a diagram and analyses of an RTD structure according to the innovation. (a) Top view of RTD coupled to a coplanar …
FIG. 3A and 3B are graphs depicting the results of interband-tunneling analyses. Fig. 3. (a) Conduction- and valence-band bending in GaN/A l N RTD structure …
FIG. 5 A and 5 B. (a) the light-vs-bias voltage (L-V) and (b) light-vs-bias current (L-I) curves. [0026]
FIG. 7 is a graph depicting the current-voltage curves for the GaN/A l N RTD structure of FIG s. 5 A and 5 B. The experimental curve is fit using a combination …
FIG. 8 is a graph depicting the same curves as
FIG. 9 is a graph depicting simulated current-voltage curves for a modified structure having lower n-type doping on the emitter side to reduce the electron …
FIG. 12 depicts an example embodiment of unipolar doped resonant tunneling light emitting diodes according to the innovation. [0032]
FIG. 13 depicts an example embodiment of unipolar doped resonant tunneling light emitting diodes according to the innovation. [0033] FIG s. 14A-14C depict …
FIG. 16 depicts an example embodiment of unipolar doped resonant tunneling light emitting diodes according to the innovation. [0036]
FIG. 17 depicts an example embodiment of unipolar doped resonant tunneling light emitting diodes according to the innovation. [0037]
FIG. 18 is an illustration depicting a bipolar GaN-based VCSEL in cross-section. A p- doped GaN region is required for hole carrier injection, while a n+ …
FIG. 19 is an illustration depicting a unipolar-doped VCSEL structure in cross-section. Both contact regions are n+ type, which has much higher conductivity …
FIG. 20A. (a) The same RTD I -V curve as in
FIG. 24 is a perspective view of a 2D array of LEDs such as those of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 20. Canceled
Canceled
A method of sterilizing a sample comprising: generating, by a plurality of unipolar-doped tunneling diodes, a light emission; and applying at least a portion of the light emission onto a sample having at least one pathogen; wherein at least one concentration of the at least one pathogen is reduced; wherein each of the plurality of unipolar-doped tunneling diodes is one of a light emitting diode or a laser diode, and includes: a bottom n-type layer; a top n-type layer; an undoped or n-type doped middle layer inserted between the top layer and bottom layer, where the middle layer comprises at least two materials which serve as one or more heterojunction tunnel barriers; wherein the top layer and the middle layer, the bottom layer and the middle layer, or both form an interband tunnel barrier for electrons that generate holes by interband tunneling through a forbidden energy gap, wherein the middle layer forms at least one intraband tunnel barrier to control the electron intraband tunneling within an active region of the light emitting diode or the laser diode; and wherein the plurality of unipolar-doped tunneling diodes is grown on a common substrate. Previously presented
The method of claim 21: wherein the light emission occurs from an n-doped A l GaN alloy layer having Al in the range 1 -80%. Previously presented
The method of claim 21: wherein the plurality of unipolar-doped tunneling diodes includes an n-type AlGaN emitter for a selected wavelength. Previously presented
The method of claim 21: wherein the light emission is created by a two-dimensional array of the plurality of unipolar-doped light emitting diodes radiating in the U V-C between approximately 240 and 280 nm. Previously presented
The method of claim 21: wherein the light emission is created by a two-dimensional array of the plurality of u ni polar-doped light emitting diodes radiating in the UV-C between approximately 240 and 280 nm, and wherein the array is coupled to free space through a parabolic reflector, thereby creating a collimated output with high and uniform illumination intensity. Previously presented
The method of sterilizing a sample according to claim 21: wherein the light emission is applied to the sample at an intensity of at least 1 millijoule per square centimeter (1 mJ/cm 2). Previously presented
The method of sterilizing a sample according to claim 21: wherein the light emission is applied to the sample at an intensity of at least 30 millijoule per square centimeter (30 mJ/cm 2). Previously presented
The method of sterilizing a sample according to claim 21: wherein the light emission includes light having a wavelength from approximately 240 to 280 nanometers. Previously presented
The method of sterilizing a sample according to claim 21: wherein the at least one patho g en includes a bacteria, a protozoan, an enteric virus, or a bacterial spore, or any pathogen containing one or more of DNA or RNA. Previously presented
The method of sterilizing a sample according to claim 21: wherein the at least one pathogen includes at least one of Escherichia co li, Vibrio cholerae, a Campylobacter species, Salmonella enterica, a species of genus Staphylococcus, a species of genus Streptococcus, a protozoan, and an influenza virus. Previously presented
The method of sterilizing a sample according to claim 21: wherein the sample further comprises water. Previously presented
The method of claim 21: wherein the at least one unipolar doped light emitting diode or laser diode exhibits a negative differential resistance. Previously presented
The method of claim 21: wherein the plurality of diodes are at least partially contained within an instrument configured to be hand held and wherein the light emission is collimated. Previously presented
The method of claim 21: wherein the sample is selected from the group consisting of water, food, surfaces, and objects. Previously presented
The method of claim 21: wherein the substrate includes GaN, A lN, sapphire, or Si. Previously presented
Canceled
Canceled
Canceled
Canceled
A transmission line relaxation oscillator comprising: at least one resonant tunneling diode; and a co-planar waveguide resonator comprising a co-planar waveguide; wherein an end of the co-planar waveguide is a short; wherein an electrical oscillation of the resonant tunneling diode is self-sustaining; wherein the at least one resonant tunneling diode includes: a plurality of unipolar doped tunneling diodes, each of which is one of a light emitting diode or a laser diode, and includes: a bottom n-type layer; a top n-type layer; an undoped or n-type doped middle layer inserted between the top layer and bottom layer, where the middle layer comprises at least two materials which serve as one or more heterojunction tunnel barriers; wherein the top layer and the middle layer, the bottom layer and the middle layer, or both form an interband tunnel barrier for electrons that generate holes by interband Zener tunneling through a forbidden energy gap, wherein the middle layer forms at least one intraband tunnel barrier to control the electron intraband tunneling within an active region of the light emitting diode or the laser diode; and wherein each of the plurality of unipolar-doped tunneling diodes is grown on a common substrate. Currently amended
The transmission line relaxation oscillator according to claim 36: further comprising a bias circuit configured to controllably cause the resonant tunneling diode to emit light. Previously presented
The transmission line relaxation oscillator according to claim 36: wherein the electrical oscillations turns the resonant-tunneling diode light emitter from off-to-on, creating a square-wave like light-emission behavior of an optical clock. Currently amended
Canceled
Canceled
Canceled
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
unipolar-doped tunneling LED/laser diode for sterilization
transmission line relaxation oscillator with resonant tunneling diode
Materials described outside the worked examples.
GaN (gallium nitride)
GaN
III-nitride heterojunction tunnel barrier materials
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 9 is a graph depicting simulated current-voltage curves for a modified structure having lower n-type doping on the emitter side to reduce the electron …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
resonant-tunneling conduction-band electron current density (baseline device) | 10000 | — |
Zener tunneling current density (baseline device) | 100 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,342,482Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2. [0039] FIG s. 20A-20C depicts a diagram and analyses of an RTD structure according to the innovation. (a) Top view of RTD coupled to a coplanar …
FIG. 3A and 3B are graphs depicting the results of interband-tunneling analyses. Fig. 3. (a) Conduction- and valence-band bending in GaN/A l N RTD structure …
FIG. 5 A and 5 B. (a) the light-vs-bias voltage (L-V) and (b) light-vs-bias current (L-I) curves. [0026]
FIG. 7 is a graph depicting the current-voltage curves for the GaN/A l N RTD structure of FIG s. 5 A and 5 B. The experimental curve is fit using a combination …
FIG. 8 is a graph depicting the same curves as
FIG. 9 is a graph depicting simulated current-voltage curves for a modified structure having lower n-type doping on the emitter side to reduce the electron …
FIG. 12 depicts an example embodiment of unipolar doped resonant tunneling light emitting diodes according to the innovation. [0032]
FIG. 13 depicts an example embodiment of unipolar doped resonant tunneling light emitting diodes according to the innovation. [0033] FIG s. 14A-14C depict …
FIG. 16 depicts an example embodiment of unipolar doped resonant tunneling light emitting diodes according to the innovation. [0036]
FIG. 17 depicts an example embodiment of unipolar doped resonant tunneling light emitting diodes according to the innovation. [0037]
FIG. 18 is an illustration depicting a bipolar GaN-based VCSEL in cross-section. A p- doped GaN region is required for hole carrier injection, while a n+ …
FIG. 19 is an illustration depicting a unipolar-doped VCSEL structure in cross-section. Both contact regions are n+ type, which has much higher conductivity …
FIG. 20A. (a) The same RTD I -V curve as in
FIG. 24 is a perspective view of a 2D array of LEDs such as those of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 20. Canceled
Canceled
A method of sterilizing a sample comprising: generating, by a plurality of unipolar-doped tunneling diodes, a light emission; and applying at least a portion of the light emission onto a sample having at least one pathogen; wherein at least one concentration of the at least one pathogen is reduced; wherein each of the plurality of unipolar-doped tunneling diodes is one of a light emitting diode or a laser diode, and includes: a bottom n-type layer; a top n-type layer; an undoped or n-type doped middle layer inserted between the top layer and bottom layer, where the middle layer comprises at least two materials which serve as one or more heterojunction tunnel barriers; wherein the top layer and the middle layer, the bottom layer and the middle layer, or both form an interband tunnel barrier for electrons that generate holes by interband tunneling through a forbidden energy gap, wherein the middle layer forms at least one intraband tunnel barrier to control the electron intraband tunneling within an active region of the light emitting diode or the laser diode; and wherein the plurality of unipolar-doped tunneling diodes is grown on a common substrate. Previously presented
The method of claim 21: wherein the light emission occurs from an n-doped A l GaN alloy layer having Al in the range 1 -80%. Previously presented
The method of claim 21: wherein the plurality of unipolar-doped tunneling diodes includes an n-type AlGaN emitter for a selected wavelength. Previously presented
The method of claim 21: wherein the light emission is created by a two-dimensional array of the plurality of unipolar-doped light emitting diodes radiating in the U V-C between approximately 240 and 280 nm. Previously presented
The method of claim 21: wherein the light emission is created by a two-dimensional array of the plurality of u ni polar-doped light emitting diodes radiating in the UV-C between approximately 240 and 280 nm, and wherein the array is coupled to free space through a parabolic reflector, thereby creating a collimated output with high and uniform illumination intensity. Previously presented
The method of sterilizing a sample according to claim 21: wherein the light emission is applied to the sample at an intensity of at least 1 millijoule per square centimeter (1 mJ/cm 2). Previously presented
The method of sterilizing a sample according to claim 21: wherein the light emission is applied to the sample at an intensity of at least 30 millijoule per square centimeter (30 mJ/cm 2). Previously presented
The method of sterilizing a sample according to claim 21: wherein the light emission includes light having a wavelength from approximately 240 to 280 nanometers. Previously presented
The method of sterilizing a sample according to claim 21: wherein the at least one patho g en includes a bacteria, a protozoan, an enteric virus, or a bacterial spore, or any pathogen containing one or more of DNA or RNA. Previously presented
The method of sterilizing a sample according to claim 21: wherein the at least one pathogen includes at least one of Escherichia co li, Vibrio cholerae, a Campylobacter species, Salmonella enterica, a species of genus Staphylococcus, a species of genus Streptococcus, a protozoan, and an influenza virus. Previously presented
The method of sterilizing a sample according to claim 21: wherein the sample further comprises water. Previously presented
The method of claim 21: wherein the at least one unipolar doped light emitting diode or laser diode exhibits a negative differential resistance. Previously presented
The method of claim 21: wherein the plurality of diodes are at least partially contained within an instrument configured to be hand held and wherein the light emission is collimated. Previously presented
The method of claim 21: wherein the sample is selected from the group consisting of water, food, surfaces, and objects. Previously presented
The method of claim 21: wherein the substrate includes GaN, A lN, sapphire, or Si. Previously presented
Canceled
Canceled
Canceled
Canceled
A transmission line relaxation oscillator comprising: at least one resonant tunneling diode; and a co-planar waveguide resonator comprising a co-planar waveguide; wherein an end of the co-planar waveguide is a short; wherein an electrical oscillation of the resonant tunneling diode is self-sustaining; wherein the at least one resonant tunneling diode includes: a plurality of unipolar doped tunneling diodes, each of which is one of a light emitting diode or a laser diode, and includes: a bottom n-type layer; a top n-type layer; an undoped or n-type doped middle layer inserted between the top layer and bottom layer, where the middle layer comprises at least two materials which serve as one or more heterojunction tunnel barriers; wherein the top layer and the middle layer, the bottom layer and the middle layer, or both form an interband tunnel barrier for electrons that generate holes by interband Zener tunneling through a forbidden energy gap, wherein the middle layer forms at least one intraband tunnel barrier to control the electron intraband tunneling within an active region of the light emitting diode or the laser diode; and wherein each of the plurality of unipolar-doped tunneling diodes is grown on a common substrate. Currently amended
The transmission line relaxation oscillator according to claim 36: further comprising a bias circuit configured to controllably cause the resonant tunneling diode to emit light. Previously presented
The transmission line relaxation oscillator according to claim 36: wherein the electrical oscillations turns the resonant-tunneling diode light emitter from off-to-on, creating a square-wave like light-emission behavior of an optical clock. Currently amended
Canceled
Canceled
Canceled
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
unipolar-doped tunneling LED/laser diode for sterilization
transmission line relaxation oscillator with resonant tunneling diode
Materials described outside the worked examples.
GaN (gallium nitride)
GaN
III-nitride heterojunction tunnel barrier materials
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 9 is a graph depicting simulated current-voltage curves for a modified structure having lower n-type doping on the emitter side to reduce the electron …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
resonant-tunneling conduction-band electron current density (baseline device) | 10000 | — |
Zener tunneling current density (baseline device) | 100 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,342,482Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2. [0039] FIG s. 20A-20C depicts a diagram and analyses of an RTD structure according to the innovation. (a) Top view of RTD coupled to a coplanar …
FIG. 3A and 3B are graphs depicting the results of interband-tunneling analyses. Fig. 3. (a) Conduction- and valence-band bending in GaN/A l N RTD structure …
FIG. 5 A and 5 B. (a) the light-vs-bias voltage (L-V) and (b) light-vs-bias current (L-I) curves. [0026]
FIG. 7 is a graph depicting the current-voltage curves for the GaN/A l N RTD structure of FIG s. 5 A and 5 B. The experimental curve is fit using a combination …
FIG. 8 is a graph depicting the same curves as
FIG. 9 is a graph depicting simulated current-voltage curves for a modified structure having lower n-type doping on the emitter side to reduce the electron …
FIG. 12 depicts an example embodiment of unipolar doped resonant tunneling light emitting diodes according to the innovation. [0032]
FIG. 13 depicts an example embodiment of unipolar doped resonant tunneling light emitting diodes according to the innovation. [0033] FIG s. 14A-14C depict …
FIG. 16 depicts an example embodiment of unipolar doped resonant tunneling light emitting diodes according to the innovation. [0036]
FIG. 17 depicts an example embodiment of unipolar doped resonant tunneling light emitting diodes according to the innovation. [0037]
FIG. 18 is an illustration depicting a bipolar GaN-based VCSEL in cross-section. A p- doped GaN region is required for hole carrier injection, while a n+ …
FIG. 19 is an illustration depicting a unipolar-doped VCSEL structure in cross-section. Both contact regions are n+ type, which has much higher conductivity …
FIG. 20A. (a) The same RTD I -V curve as in
FIG. 24 is a perspective view of a 2D array of LEDs such as those of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 20. Canceled
Canceled
A method of sterilizing a sample comprising: generating, by a plurality of unipolar-doped tunneling diodes, a light emission; and applying at least a portion of the light emission onto a sample having at least one pathogen; wherein at least one concentration of the at least one pathogen is reduced; wherein each of the plurality of unipolar-doped tunneling diodes is one of a light emitting diode or a laser diode, and includes: a bottom n-type layer; a top n-type layer; an undoped or n-type doped middle layer inserted between the top layer and bottom layer, where the middle layer comprises at least two materials which serve as one or more heterojunction tunnel barriers; wherein the top layer and the middle layer, the bottom layer and the middle layer, or both form an interband tunnel barrier for electrons that generate holes by interband tunneling through a forbidden energy gap, wherein the middle layer forms at least one intraband tunnel barrier to control the electron intraband tunneling within an active region of the light emitting diode or the laser diode; and wherein the plurality of unipolar-doped tunneling diodes is grown on a common substrate. Previously presented
The method of claim 21: wherein the light emission occurs from an n-doped A l GaN alloy layer having Al in the range 1 -80%. Previously presented
The method of claim 21: wherein the plurality of unipolar-doped tunneling diodes includes an n-type AlGaN emitter for a selected wavelength. Previously presented
The method of claim 21: wherein the light emission is created by a two-dimensional array of the plurality of unipolar-doped light emitting diodes radiating in the U V-C between approximately 240 and 280 nm. Previously presented
The method of claim 21: wherein the light emission is created by a two-dimensional array of the plurality of u ni polar-doped light emitting diodes radiating in the UV-C between approximately 240 and 280 nm, and wherein the array is coupled to free space through a parabolic reflector, thereby creating a collimated output with high and uniform illumination intensity. Previously presented
The method of sterilizing a sample according to claim 21: wherein the light emission is applied to the sample at an intensity of at least 1 millijoule per square centimeter (1 mJ/cm 2). Previously presented
The method of sterilizing a sample according to claim 21: wherein the light emission is applied to the sample at an intensity of at least 30 millijoule per square centimeter (30 mJ/cm 2). Previously presented
The method of sterilizing a sample according to claim 21: wherein the light emission includes light having a wavelength from approximately 240 to 280 nanometers. Previously presented
The method of sterilizing a sample according to claim 21: wherein the at least one patho g en includes a bacteria, a protozoan, an enteric virus, or a bacterial spore, or any pathogen containing one or more of DNA or RNA. Previously presented
The method of sterilizing a sample according to claim 21: wherein the at least one pathogen includes at least one of Escherichia co li, Vibrio cholerae, a Campylobacter species, Salmonella enterica, a species of genus Staphylococcus, a species of genus Streptococcus, a protozoan, and an influenza virus. Previously presented
The method of sterilizing a sample according to claim 21: wherein the sample further comprises water. Previously presented
The method of claim 21: wherein the at least one unipolar doped light emitting diode or laser diode exhibits a negative differential resistance. Previously presented
The method of claim 21: wherein the plurality of diodes are at least partially contained within an instrument configured to be hand held and wherein the light emission is collimated. Previously presented
The method of claim 21: wherein the sample is selected from the group consisting of water, food, surfaces, and objects. Previously presented
The method of claim 21: wherein the substrate includes GaN, A lN, sapphire, or Si. Previously presented
Canceled
Canceled
Canceled
Canceled
A transmission line relaxation oscillator comprising: at least one resonant tunneling diode; and a co-planar waveguide resonator comprising a co-planar waveguide; wherein an end of the co-planar waveguide is a short; wherein an electrical oscillation of the resonant tunneling diode is self-sustaining; wherein the at least one resonant tunneling diode includes: a plurality of unipolar doped tunneling diodes, each of which is one of a light emitting diode or a laser diode, and includes: a bottom n-type layer; a top n-type layer; an undoped or n-type doped middle layer inserted between the top layer and bottom layer, where the middle layer comprises at least two materials which serve as one or more heterojunction tunnel barriers; wherein the top layer and the middle layer, the bottom layer and the middle layer, or both form an interband tunnel barrier for electrons that generate holes by interband Zener tunneling through a forbidden energy gap, wherein the middle layer forms at least one intraband tunnel barrier to control the electron intraband tunneling within an active region of the light emitting diode or the laser diode; and wherein each of the plurality of unipolar-doped tunneling diodes is grown on a common substrate. Currently amended
The transmission line relaxation oscillator according to claim 36: further comprising a bias circuit configured to controllably cause the resonant tunneling diode to emit light. Previously presented
The transmission line relaxation oscillator according to claim 36: wherein the electrical oscillations turns the resonant-tunneling diode light emitter from off-to-on, creating a square-wave like light-emission behavior of an optical clock. Currently amended
Canceled
Canceled
Canceled
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
unipolar-doped tunneling LED/laser diode for sterilization
transmission line relaxation oscillator with resonant tunneling diode
Materials described outside the worked examples.
GaN (gallium nitride)
GaN
III-nitride heterojunction tunnel barrier materials
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 9 is a graph depicting simulated current-voltage curves for a modified structure having lower n-type doping on the emitter side to reduce the electron …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
resonant-tunneling conduction-band electron current density (baseline device) | 10000 | — |
Zener tunneling current density (baseline device) | 100 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,342,482Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2. [0039] FIG s. 20A-20C depicts a diagram and analyses of an RTD structure according to the innovation. (a) Top view of RTD coupled to a coplanar …
FIG. 3A and 3B are graphs depicting the results of interband-tunneling analyses. Fig. 3. (a) Conduction- and valence-band bending in GaN/A l N RTD structure …
FIG. 5 A and 5 B. (a) the light-vs-bias voltage (L-V) and (b) light-vs-bias current (L-I) curves. [0026]
FIG. 7 is a graph depicting the current-voltage curves for the GaN/A l N RTD structure of FIG s. 5 A and 5 B. The experimental curve is fit using a combination …
FIG. 8 is a graph depicting the same curves as
FIG. 9 is a graph depicting simulated current-voltage curves for a modified structure having lower n-type doping on the emitter side to reduce the electron …
FIG. 12 depicts an example embodiment of unipolar doped resonant tunneling light emitting diodes according to the innovation. [0032]
FIG. 13 depicts an example embodiment of unipolar doped resonant tunneling light emitting diodes according to the innovation. [0033] FIG s. 14A-14C depict …
FIG. 16 depicts an example embodiment of unipolar doped resonant tunneling light emitting diodes according to the innovation. [0036]
FIG. 17 depicts an example embodiment of unipolar doped resonant tunneling light emitting diodes according to the innovation. [0037]
FIG. 18 is an illustration depicting a bipolar GaN-based VCSEL in cross-section. A p- doped GaN region is required for hole carrier injection, while a n+ …
FIG. 19 is an illustration depicting a unipolar-doped VCSEL structure in cross-section. Both contact regions are n+ type, which has much higher conductivity …
FIG. 20A. (a) The same RTD I -V curve as in
FIG. 24 is a perspective view of a 2D array of LEDs such as those of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 20. Canceled
Canceled
A method of sterilizing a sample comprising: generating, by a plurality of unipolar-doped tunneling diodes, a light emission; and applying at least a portion of the light emission onto a sample having at least one pathogen; wherein at least one concentration of the at least one pathogen is reduced; wherein each of the plurality of unipolar-doped tunneling diodes is one of a light emitting diode or a laser diode, and includes: a bottom n-type layer; a top n-type layer; an undoped or n-type doped middle layer inserted between the top layer and bottom layer, where the middle layer comprises at least two materials which serve as one or more heterojunction tunnel barriers; wherein the top layer and the middle layer, the bottom layer and the middle layer, or both form an interband tunnel barrier for electrons that generate holes by interband tunneling through a forbidden energy gap, wherein the middle layer forms at least one intraband tunnel barrier to control the electron intraband tunneling within an active region of the light emitting diode or the laser diode; and wherein the plurality of unipolar-doped tunneling diodes is grown on a common substrate. Previously presented
The method of claim 21: wherein the light emission occurs from an n-doped A l GaN alloy layer having Al in the range 1 -80%. Previously presented
The method of claim 21: wherein the plurality of unipolar-doped tunneling diodes includes an n-type AlGaN emitter for a selected wavelength. Previously presented
The method of claim 21: wherein the light emission is created by a two-dimensional array of the plurality of unipolar-doped light emitting diodes radiating in the U V-C between approximately 240 and 280 nm. Previously presented
The method of claim 21: wherein the light emission is created by a two-dimensional array of the plurality of u ni polar-doped light emitting diodes radiating in the UV-C between approximately 240 and 280 nm, and wherein the array is coupled to free space through a parabolic reflector, thereby creating a collimated output with high and uniform illumination intensity. Previously presented
The method of sterilizing a sample according to claim 21: wherein the light emission is applied to the sample at an intensity of at least 1 millijoule per square centimeter (1 mJ/cm 2). Previously presented
The method of sterilizing a sample according to claim 21: wherein the light emission is applied to the sample at an intensity of at least 30 millijoule per square centimeter (30 mJ/cm 2). Previously presented
The method of sterilizing a sample according to claim 21: wherein the light emission includes light having a wavelength from approximately 240 to 280 nanometers. Previously presented
The method of sterilizing a sample according to claim 21: wherein the at least one patho g en includes a bacteria, a protozoan, an enteric virus, or a bacterial spore, or any pathogen containing one or more of DNA or RNA. Previously presented
The method of sterilizing a sample according to claim 21: wherein the at least one pathogen includes at least one of Escherichia co li, Vibrio cholerae, a Campylobacter species, Salmonella enterica, a species of genus Staphylococcus, a species of genus Streptococcus, a protozoan, and an influenza virus. Previously presented
The method of sterilizing a sample according to claim 21: wherein the sample further comprises water. Previously presented
The method of claim 21: wherein the at least one unipolar doped light emitting diode or laser diode exhibits a negative differential resistance. Previously presented
The method of claim 21: wherein the plurality of diodes are at least partially contained within an instrument configured to be hand held and wherein the light emission is collimated. Previously presented
The method of claim 21: wherein the sample is selected from the group consisting of water, food, surfaces, and objects. Previously presented
The method of claim 21: wherein the substrate includes GaN, A lN, sapphire, or Si. Previously presented
Canceled
Canceled
Canceled
Canceled
A transmission line relaxation oscillator comprising: at least one resonant tunneling diode; and a co-planar waveguide resonator comprising a co-planar waveguide; wherein an end of the co-planar waveguide is a short; wherein an electrical oscillation of the resonant tunneling diode is self-sustaining; wherein the at least one resonant tunneling diode includes: a plurality of unipolar doped tunneling diodes, each of which is one of a light emitting diode or a laser diode, and includes: a bottom n-type layer; a top n-type layer; an undoped or n-type doped middle layer inserted between the top layer and bottom layer, where the middle layer comprises at least two materials which serve as one or more heterojunction tunnel barriers; wherein the top layer and the middle layer, the bottom layer and the middle layer, or both form an interband tunnel barrier for electrons that generate holes by interband Zener tunneling through a forbidden energy gap, wherein the middle layer forms at least one intraband tunnel barrier to control the electron intraband tunneling within an active region of the light emitting diode or the laser diode; and wherein each of the plurality of unipolar-doped tunneling diodes is grown on a common substrate. Currently amended
The transmission line relaxation oscillator according to claim 36: further comprising a bias circuit configured to controllably cause the resonant tunneling diode to emit light. Previously presented
The transmission line relaxation oscillator according to claim 36: wherein the electrical oscillations turns the resonant-tunneling diode light emitter from off-to-on, creating a square-wave like light-emission behavior of an optical clock. Currently amended
Canceled
Canceled
Canceled
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
unipolar-doped tunneling LED/laser diode for sterilization
transmission line relaxation oscillator with resonant tunneling diode
Materials described outside the worked examples.
GaN (gallium nitride)
GaN
III-nitride heterojunction tunnel barrier materials
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 9 is a graph depicting simulated current-voltage curves for a modified structure having lower n-type doping on the emitter side to reduce the electron …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
resonant-tunneling conduction-band electron current density (baseline device) | 10000 | — |
Zener tunneling current density (baseline device) | 100 |
Related documents with shared materials, methods, properties, or citations.
unipolar-doped tunneling diode LED/LD (general embodiment)
AlGaN (aluminum gallium nitride)
AlxGa(1-x)N
AlN substrate
AlN
sapphire substrate
Al₂O₃
silicon substrate
Si
InGaN
InxGa(1-x)N
| — |
Thickness | 21–22 nm | — |
Thickness | 240–280 nm | — |
Temperature | 700–900 °C | — |
Voltage | 2–6 V | — |
Thickness | 10–500 nm | — |
Thickness | 2–15 nm | — |
Thickness | 1–50 nm | — |
Thickness | 10–1000 nm | — |
Thickness | 0.5–5 nm | — |
Thickness | 1–8 nm | — |
Thickness | 1–10 nm | — |
Thickness | 1–5 nm | — |
Thickness | 200–300 nm | — |
Thickness | 100–280 nm | — |
Thickness | 10–200 nm | — |
Thickness | 2–8 nm | — |
Thickness | 390–700 nm | — |
Thickness | 350–450 nm | — |
Thickness | 240–360 nm | — |
Thickness | ≥ 370 nm | — |
unipolar-doped tunneling diode LED/LD (general embodiment)
AlGaN (aluminum gallium nitride)
AlxGa(1-x)N
AlN substrate
AlN
sapphire substrate
Al₂O₃
silicon substrate
Si
InGaN
InxGa(1-x)N
| — |
Thickness | 21–22 nm | — |
Thickness | 240–280 nm | — |
Temperature | 700–900 °C | — |
Voltage | 2–6 V | — |
Thickness | 10–500 nm | — |
Thickness | 2–15 nm | — |
Thickness | 1–50 nm | — |
Thickness | 10–1000 nm | — |
Thickness | 0.5–5 nm | — |
Thickness | 1–8 nm | — |
Thickness | 1–10 nm | — |
Thickness | 1–5 nm | — |
Thickness | 200–300 nm | — |
Thickness | 100–280 nm | — |
Thickness | 10–200 nm | — |
Thickness | 2–8 nm | — |
Thickness | 390–700 nm | — |
Thickness | 350–450 nm | — |
Thickness | 240–360 nm | — |
Thickness | ≥ 370 nm | — |
unipolar-doped tunneling diode LED/LD (general embodiment)
AlGaN (aluminum gallium nitride)
AlxGa(1-x)N
AlN substrate
AlN
sapphire substrate
Al₂O₃
silicon substrate
Si
InGaN
InxGa(1-x)N
| — |
Thickness | 21–22 nm | — |
Thickness | 240–280 nm | — |
Temperature | 700–900 °C | — |
Voltage | 2–6 V | — |
Thickness | 10–500 nm | — |
Thickness | 2–15 nm | — |
Thickness | 1–50 nm | — |
Thickness | 10–1000 nm | — |
Thickness | 0.5–5 nm | — |
Thickness | 1–8 nm | — |
Thickness | 1–10 nm | — |
Thickness | 1–5 nm | — |
Thickness | 200–300 nm | — |
Thickness | 100–280 nm | — |
Thickness | 10–200 nm | — |
Thickness | 2–8 nm | — |
Thickness | 390–700 nm | — |
Thickness | 350–450 nm | — |
Thickness | 240–360 nm | — |
Thickness | ≥ 370 nm | — |
unipolar-doped tunneling diode LED/LD (general embodiment)
AlGaN (aluminum gallium nitride)
AlxGa(1-x)N
AlN substrate
AlN
sapphire substrate
Al₂O₃
silicon substrate
Si
InGaN
InxGa(1-x)N
| — |
Thickness | 21–22 nm | — |
Thickness | 240–280 nm | — |
Temperature | 700–900 °C | — |
Voltage | 2–6 V | — |
Thickness | 10–500 nm | — |
Thickness | 2–15 nm | — |
Thickness | 1–50 nm | — |
Thickness | 10–1000 nm | — |
Thickness | 0.5–5 nm | — |
Thickness | 1–8 nm | — |
Thickness | 1–10 nm | — |
Thickness | 1–5 nm | — |
Thickness | 200–300 nm | — |
Thickness | 100–280 nm | — |
Thickness | 10–200 nm | — |
Thickness | 2–8 nm | — |
Thickness | 390–700 nm | — |
Thickness | 350–450 nm | — |
Thickness | 240–360 nm | — |
Thickness | ≥ 370 nm | — |