Patent
US 10,497,562METHOD FOR MANUFACTURING GALLIUM NITRIDE SUBSTRATE USING THE HYDRIDE VAPOR PHASE EPITAXY
Jea Gun PARK
US
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Patent
Atlas literature
Patent
US 10,497,562Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1c, during step S 1 40, the fl o w rate ratio (x 1) of ammonia gas to hydrogen chloride gas is lowered stepwise. Preferably, in step S 1 41 of allowing a …
FIG. 2 is a graph showing the thickness of each of the gallium nitride substrates fabricated according to Example 1 of the present disclosure and the thickness …
FIG. 3 is a graph showing bo wing of galliu m nitride substrates before laser lift-off, when the gallium nitride substrates are fab ri cated according to …
FIG. 4 is a graph sh ow ing bo wing of gallium nitride substrates after sapphire substrates are separated through a laser lift-off process, when the gallium nit …
FIGS. 5 a to 5c are scanning electron microscope-cathodoluminescence (SEM-CL) images of the mirror gallium nitride layer (170 p m) of the gallium nit ri de …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a gallium nitride substrate, comprising: injecting ammonia (N H 3) gas to perform first surface treatment on a sapphire substrate; injecting ammonia gas and hydrogen chloride (HCl) gas to form a buffer layer on the sapphire substrate; injecting ammonia gas to perform second surface treatment on the sapphire substrate; and allowing gallium nitride (G aN) to grow on the sapphire substrate while lowering a flow rate ratio (x: 1) of ammonia gas to hydrogen chloride gas (N H 3: HCl) stepwise. Original
The method according to claim 1, wherein, in the allowing, the fl ow rate of ammonia gas is lowered stepwise over time and the flow rate of hydrogen chloride gas is kept constant over time. Original
The method according to claim 1, wherein, in the allowing, bowing of the gallium nitride substrate is controlled by the flow rate ratio of ammonia gas to hydrogen chloride gas. Original
The method according to claim 1, wherein the gallium nitride (GaN) comprises a pit gallium nitride (pit GaN) layer and a mirror gallium nitride (mirror GaN) layer. Original
The method according to claim 1, wherein the buffer layer is aluminum nitride (Al N). Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride substrate
Materials described outside the worked examples.
gallium nitride
GaN
sapphire substrate
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph showing the thickness of each of the gallium nitride substrates fabricated according to Example 1 of the present disclosure and the thickness …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
pit GaN layer thickness (claimed range) | 50–200 µm | GaN |
mirror GaN layer thickness (claimed range) | 50–200 µm |
Table 1
SVG 15991481.08-07-2018.JKJYBEFPRXEAPX4.SPEC.22.18.304.2172.2221.2842.svg
thod of fabricating a gallium nitride substrate according to Example 1 of the present disclosure are shown in Table 1.
p. 13
Table 2
In Table 2, the thickness of the gallium nitride substrates fabricated
p. 15
Table 3
Table 3 shows bowing of gallium nitride substrates before laser lif
p. 15
Table 4
Table 4 shows bowing of gallium nitride substrates after sapphire s
p. 15
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,497,562Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1c, during step S 1 40, the fl o w rate ratio (x 1) of ammonia gas to hydrogen chloride gas is lowered stepwise. Preferably, in step S 1 41 of allowing a …
FIG. 2 is a graph showing the thickness of each of the gallium nitride substrates fabricated according to Example 1 of the present disclosure and the thickness …
FIG. 3 is a graph showing bo wing of galliu m nitride substrates before laser lift-off, when the gallium nitride substrates are fab ri cated according to …
FIG. 4 is a graph sh ow ing bo wing of gallium nitride substrates after sapphire substrates are separated through a laser lift-off process, when the gallium nit …
FIGS. 5 a to 5c are scanning electron microscope-cathodoluminescence (SEM-CL) images of the mirror gallium nitride layer (170 p m) of the gallium nit ri de …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a gallium nitride substrate, comprising: injecting ammonia (N H 3) gas to perform first surface treatment on a sapphire substrate; injecting ammonia gas and hydrogen chloride (HCl) gas to form a buffer layer on the sapphire substrate; injecting ammonia gas to perform second surface treatment on the sapphire substrate; and allowing gallium nitride (G aN) to grow on the sapphire substrate while lowering a flow rate ratio (x: 1) of ammonia gas to hydrogen chloride gas (N H 3: HCl) stepwise. Original
The method according to claim 1, wherein, in the allowing, the fl ow rate of ammonia gas is lowered stepwise over time and the flow rate of hydrogen chloride gas is kept constant over time. Original
The method according to claim 1, wherein, in the allowing, bowing of the gallium nitride substrate is controlled by the flow rate ratio of ammonia gas to hydrogen chloride gas. Original
The method according to claim 1, wherein the gallium nitride (GaN) comprises a pit gallium nitride (pit GaN) layer and a mirror gallium nitride (mirror GaN) layer. Original
The method according to claim 1, wherein the buffer layer is aluminum nitride (Al N). Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride substrate
Materials described outside the worked examples.
gallium nitride
GaN
sapphire substrate
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph showing the thickness of each of the gallium nitride substrates fabricated according to Example 1 of the present disclosure and the thickness …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
pit GaN layer thickness (claimed range) | 50–200 µm | GaN |
mirror GaN layer thickness (claimed range) | 50–200 µm |
Table 1
SVG 15991481.08-07-2018.JKJYBEFPRXEAPX4.SPEC.22.18.304.2172.2221.2842.svg
thod of fabricating a gallium nitride substrate according to Example 1 of the present disclosure are shown in Table 1.
p. 13
Table 2
In Table 2, the thickness of the gallium nitride substrates fabricated
p. 15
Table 3
Table 3 shows bowing of gallium nitride substrates before laser lif
p. 15
Table 4
Table 4 shows bowing of gallium nitride substrates after sapphire s
p. 15
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,497,562Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1c, during step S 1 40, the fl o w rate ratio (x 1) of ammonia gas to hydrogen chloride gas is lowered stepwise. Preferably, in step S 1 41 of allowing a …
FIG. 2 is a graph showing the thickness of each of the gallium nitride substrates fabricated according to Example 1 of the present disclosure and the thickness …
FIG. 3 is a graph showing bo wing of galliu m nitride substrates before laser lift-off, when the gallium nitride substrates are fab ri cated according to …
FIG. 4 is a graph sh ow ing bo wing of gallium nitride substrates after sapphire substrates are separated through a laser lift-off process, when the gallium nit …
FIGS. 5 a to 5c are scanning electron microscope-cathodoluminescence (SEM-CL) images of the mirror gallium nitride layer (170 p m) of the gallium nit ri de …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a gallium nitride substrate, comprising: injecting ammonia (N H 3) gas to perform first surface treatment on a sapphire substrate; injecting ammonia gas and hydrogen chloride (HCl) gas to form a buffer layer on the sapphire substrate; injecting ammonia gas to perform second surface treatment on the sapphire substrate; and allowing gallium nitride (G aN) to grow on the sapphire substrate while lowering a flow rate ratio (x: 1) of ammonia gas to hydrogen chloride gas (N H 3: HCl) stepwise. Original
The method according to claim 1, wherein, in the allowing, the fl ow rate of ammonia gas is lowered stepwise over time and the flow rate of hydrogen chloride gas is kept constant over time. Original
The method according to claim 1, wherein, in the allowing, bowing of the gallium nitride substrate is controlled by the flow rate ratio of ammonia gas to hydrogen chloride gas. Original
The method according to claim 1, wherein the gallium nitride (GaN) comprises a pit gallium nitride (pit GaN) layer and a mirror gallium nitride (mirror GaN) layer. Original
The method according to claim 1, wherein the buffer layer is aluminum nitride (Al N). Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride substrate
Materials described outside the worked examples.
gallium nitride
GaN
sapphire substrate
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph showing the thickness of each of the gallium nitride substrates fabricated according to Example 1 of the present disclosure and the thickness …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
pit GaN layer thickness (claimed range) | 50–200 µm | GaN |
mirror GaN layer thickness (claimed range) | 50–200 µm |
Table 1
SVG 15991481.08-07-2018.JKJYBEFPRXEAPX4.SPEC.22.18.304.2172.2221.2842.svg
thod of fabricating a gallium nitride substrate according to Example 1 of the present disclosure are shown in Table 1.
p. 13
Table 2
In Table 2, the thickness of the gallium nitride substrates fabricated
p. 15
Table 3
Table 3 shows bowing of gallium nitride substrates before laser lif
p. 15
Table 4
Table 4 shows bowing of gallium nitride substrates after sapphire s
p. 15
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,497,562Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1c, during step S 1 40, the fl o w rate ratio (x 1) of ammonia gas to hydrogen chloride gas is lowered stepwise. Preferably, in step S 1 41 of allowing a …
FIG. 2 is a graph showing the thickness of each of the gallium nitride substrates fabricated according to Example 1 of the present disclosure and the thickness …
FIG. 3 is a graph showing bo wing of galliu m nitride substrates before laser lift-off, when the gallium nitride substrates are fab ri cated according to …
FIG. 4 is a graph sh ow ing bo wing of gallium nitride substrates after sapphire substrates are separated through a laser lift-off process, when the gallium nit …
FIGS. 5 a to 5c are scanning electron microscope-cathodoluminescence (SEM-CL) images of the mirror gallium nitride layer (170 p m) of the gallium nit ri de …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a gallium nitride substrate, comprising: injecting ammonia (N H 3) gas to perform first surface treatment on a sapphire substrate; injecting ammonia gas and hydrogen chloride (HCl) gas to form a buffer layer on the sapphire substrate; injecting ammonia gas to perform second surface treatment on the sapphire substrate; and allowing gallium nitride (G aN) to grow on the sapphire substrate while lowering a flow rate ratio (x: 1) of ammonia gas to hydrogen chloride gas (N H 3: HCl) stepwise. Original
The method according to claim 1, wherein, in the allowing, the fl ow rate of ammonia gas is lowered stepwise over time and the flow rate of hydrogen chloride gas is kept constant over time. Original
The method according to claim 1, wherein, in the allowing, bowing of the gallium nitride substrate is controlled by the flow rate ratio of ammonia gas to hydrogen chloride gas. Original
The method according to claim 1, wherein the gallium nitride (GaN) comprises a pit gallium nitride (pit GaN) layer and a mirror gallium nitride (mirror GaN) layer. Original
The method according to claim 1, wherein the buffer layer is aluminum nitride (Al N). Original
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride substrate
Materials described outside the worked examples.
gallium nitride
GaN
sapphire substrate
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph showing the thickness of each of the gallium nitride substrates fabricated according to Example 1 of the present disclosure and the thickness …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
pit GaN layer thickness (claimed range) | 50–200 µm | GaN |
mirror GaN layer thickness (claimed range) | 50–200 µm |
Table 1
SVG 15991481.08-07-2018.JKJYBEFPRXEAPX4.SPEC.22.18.304.2172.2221.2842.svg
thod of fabricating a gallium nitride substrate according to Example 1 of the present disclosure are shown in Table 1.
p. 13
Table 2
In Table 2, the thickness of the gallium nitride substrates fabricated
p. 15
Table 3
Table 3 shows bowing of gallium nitride substrates before laser lif
p. 15
Table 4
Table 4 shows bowing of gallium nitride substrates after sapphire s
p. 15
Related documents with shared materials, methods, properties, or citations.
aluminum nitride
AlN
hydrogen chloride gas
HCl
FIG. 2 is a graph showing the thickness of each of the gallium nitride substrates fabricated according to Example 1 of the present disclosure and the thickness …
FIG. 3 is a graph showing bo wing of galliu m nitride substrates before laser lift-off, when the gallium nitride substrates are fab ri cated according to …
FIGS. 5 a to 5c are scanning electron microscope-cathodoluminescence (SEM-CL) images of the mirror gallium nitride layer (170 p m) of the gallium nit ri de …
NH3 to HCl flow rate ratio during GaN growth (claimed range) | 2–10.8 dimensionless | GaN |
Temperature | 900–1100 °C | — |
Duration | 600–3600 s | — |
Temperature | 0–1100 °C | — |
Flow Rate | ≥ 20000 sccm | — |
aluminum nitride
AlN
hydrogen chloride gas
HCl
FIG. 2 is a graph showing the thickness of each of the gallium nitride substrates fabricated according to Example 1 of the present disclosure and the thickness …
FIG. 3 is a graph showing bo wing of galliu m nitride substrates before laser lift-off, when the gallium nitride substrates are fab ri cated according to …
FIGS. 5 a to 5c are scanning electron microscope-cathodoluminescence (SEM-CL) images of the mirror gallium nitride layer (170 p m) of the gallium nit ri de …
NH3 to HCl flow rate ratio during GaN growth (claimed range) | 2–10.8 dimensionless | GaN |
Temperature | 900–1100 °C | — |
Duration | 600–3600 s | — |
Temperature | 0–1100 °C | — |
Flow Rate | ≥ 20000 sccm | — |
aluminum nitride
AlN
hydrogen chloride gas
HCl
FIG. 2 is a graph showing the thickness of each of the gallium nitride substrates fabricated according to Example 1 of the present disclosure and the thickness …
FIG. 3 is a graph showing bo wing of galliu m nitride substrates before laser lift-off, when the gallium nitride substrates are fab ri cated according to …
FIGS. 5 a to 5c are scanning electron microscope-cathodoluminescence (SEM-CL) images of the mirror gallium nitride layer (170 p m) of the gallium nit ri de …
NH3 to HCl flow rate ratio during GaN growth (claimed range) | 2–10.8 dimensionless | GaN |
Temperature | 900–1100 °C | — |
Duration | 600–3600 s | — |
Temperature | 0–1100 °C | — |
Flow Rate | ≥ 20000 sccm | — |
aluminum nitride
AlN
hydrogen chloride gas
HCl
FIG. 2 is a graph showing the thickness of each of the gallium nitride substrates fabricated according to Example 1 of the present disclosure and the thickness …
FIG. 3 is a graph showing bo wing of galliu m nitride substrates before laser lift-off, when the gallium nitride substrates are fab ri cated according to …
FIGS. 5 a to 5c are scanning electron microscope-cathodoluminescence (SEM-CL) images of the mirror gallium nitride layer (170 p m) of the gallium nit ri de …
NH3 to HCl flow rate ratio during GaN growth (claimed range) | 2–10.8 dimensionless | GaN |
Temperature | 900–1100 °C | — |
Duration | 600–3600 s | — |
Temperature | 0–1100 °C | — |
Flow Rate | ≥ 20000 sccm | — |