Patent
US 10,975,492METHOD ASSOCIATED WITH A CRYSTALLINE COMPOSITION AND WAFER
Mark Philip D'Evelyn
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,975,492Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 20. Canceled
Canceled
A method of forming a GaN single crystal in a chamber having a first region having a first end and a second region having a second end, said method comprising: disposing a nucleation center in said first region and a GaN source material in said second region; pressurizing the chamber; heatin g the chamber to a g rowth temperature; establishing[[, at]] and holdin g for a first time period, which occurs after heatin g the chamber to the g rowth temperature, a first temperature distribution in said chamber in which a first non-zero temperature gradient exists between a first temperature at said first end and a second temperature at said second end; and establishing[[, at]] and holdin g for a second time period, which is subsequent to the first time period, a second temperature distribution in said chamber in which a second non-zero temperature gradient exists between a third temperature at said first end and a fourth temperature said second end, said third temperature being sufficient to cause growth of at least one GaN single crystal in said first region, and said fourth temperature being sufficient to cause etching of said GaN source material in said second region., wherein said second non-zero temperature gradient is larger in ma g nitude than the first non-zero temperature gradient. Currently amended
The method of forming a GaN single crystal of claim 21, wherein the nucleation center comprises one or more GaN single crystal seeds. Previously presented
The method of forming a GaN single crystal of claim 21, wherein the GaN single crystal is grown at a rate of at least 5 micrometers per hour. Previously presented
The method of forming a GaN single crystal of claim 21, wherein the GaN single crystal is grown at a rate of at least [[10]] 11.3 micrometers per hour. Currently amended
The method of forming a GaN single crystal of claim 21, wherein the GaN single crystal formed has a maximum dimension of at least 2 millimeters, a dislocation density of less than 10 4 cm- 2, and substantially no tilt boundaries. Previously presented
The method of forming a GaN single crystal of claim 21, further comprising disposing a mineralizer within the chamber, wherein the mineralizer comprises at least one of: alkali and alkaline-earth nitrides, amides, urea and related compounds, ammonium salts, rare earth salts, halide salts, sulfide salts, nitrate salts, azide salts, compounds formed by chemical reaction of Ga and/or GaN with at least one of the above, and mixtures thereof. Previously presented
The method of forming a GaN single crystal of claim 21, wherein the GaN solvent comprises ammonia and further comprises a mineralizer, comprising at least one of hydrogen halide, ammonium halide, gallium halide, gallium tri halide, or a compound produced by chemical reactions between the hydrogen halide and one or more of ammonia (NH₃), gallium, or gallium nitride and is present at a concentration of 0.5 to 90 atomic % with respect to the ammonia in the GaN solvent. Previously presented
The method of forming a GaN single crystal of claim 21, further comprising providing a dopant source for doping of n-type, semi-insulating, or p-type GaN crystals, and wherein the dopant source comprises at least one dopant selected from H, Be, C, O, Si, Ge, Be, Mg, Zn, Ca, Sc, Ti, V, Cr, Mn, Fe, C o, Ni, Cu, Zr, Hf, and a rare earth metal. Previously presented
The method of forming a GaN single crystal of claim 21, further comprising providing a getter, wherein the getter comprises one or more of alkaline earth metals, Sc, Ti, V, Cr, Y, Zr, Nb, Hf, Ta, W, or a rare earth metal. Previously presented
The method of forming a GaN single crystal of claim 21, further comprising processing [[a]] at least one GaN single crystal into wafers. Currently amended
The method of forming a GaN single crystal of claim 21, further comprising: settin g, [[at]] for a third time period prior to the [[first]] second time period, a third temperature distribution in the chamber in which a third temperature gradient exists between a fifth temperature at the first end and a sixth temperature at the second end, wherein the third temperature gradient has a sign that is opposite to the sign of the first non-zero temperature gradient and the second non-zero temperature gradient. Currently amended
The method of forming a GaN single crystal of claim 21, wherein the second period is greater than six hours. New
The method of forming a GaN single crystal of claim 21, wherein a difference between the first temperature and the second temperature is at least 3 degrees Celsius. New
The method of forming a GaN single crystal of claim 21, further comprising disposing a mineralizer within the chamber, wherein the mineralizer comprises fluorine. New
The method of forming a GaN single crystal of claim 21, wherein the growth temperature is between 550 degrees Celsius and 900 degrees Celsius. New
The method of forming a GaN single crystal of claim 21, wherein the second non-zero temperature gradient has the same sign as the first non-zero temperature gradient. New
Canceled
Canceled
The method of forming a GaN single crystal of claim [[22,]] 21, wherein a difference between the first temperature and the second temperature is 10 degrees Celsius or less. Currently amended
The method of forming a GaN single crystal of claim [[22,]] 21, wherein the first time period is at least 1 minut. Currently amended
The method of forming a GaN single crystal of claim 25, wherein the first time period is less than or equal to two hours. New
Canceled
Canceled
Materials described outside the worked examples.
GaN single crystal
GaN
ammonia (GaN solvent)
NH₃
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
N-H stretch infrared absorption peak | 3175 | GaN |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,975,492Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 20. Canceled
Canceled
A method of forming a GaN single crystal in a chamber having a first region having a first end and a second region having a second end, said method comprising: disposing a nucleation center in said first region and a GaN source material in said second region; pressurizing the chamber; heatin g the chamber to a g rowth temperature; establishing[[, at]] and holdin g for a first time period, which occurs after heatin g the chamber to the g rowth temperature, a first temperature distribution in said chamber in which a first non-zero temperature gradient exists between a first temperature at said first end and a second temperature at said second end; and establishing[[, at]] and holdin g for a second time period, which is subsequent to the first time period, a second temperature distribution in said chamber in which a second non-zero temperature gradient exists between a third temperature at said first end and a fourth temperature said second end, said third temperature being sufficient to cause growth of at least one GaN single crystal in said first region, and said fourth temperature being sufficient to cause etching of said GaN source material in said second region., wherein said second non-zero temperature gradient is larger in ma g nitude than the first non-zero temperature gradient. Currently amended
The method of forming a GaN single crystal of claim 21, wherein the nucleation center comprises one or more GaN single crystal seeds. Previously presented
The method of forming a GaN single crystal of claim 21, wherein the GaN single crystal is grown at a rate of at least 5 micrometers per hour. Previously presented
The method of forming a GaN single crystal of claim 21, wherein the GaN single crystal is grown at a rate of at least [[10]] 11.3 micrometers per hour. Currently amended
The method of forming a GaN single crystal of claim 21, wherein the GaN single crystal formed has a maximum dimension of at least 2 millimeters, a dislocation density of less than 10 4 cm- 2, and substantially no tilt boundaries. Previously presented
The method of forming a GaN single crystal of claim 21, further comprising disposing a mineralizer within the chamber, wherein the mineralizer comprises at least one of: alkali and alkaline-earth nitrides, amides, urea and related compounds, ammonium salts, rare earth salts, halide salts, sulfide salts, nitrate salts, azide salts, compounds formed by chemical reaction of Ga and/or GaN with at least one of the above, and mixtures thereof. Previously presented
The method of forming a GaN single crystal of claim 21, wherein the GaN solvent comprises ammonia and further comprises a mineralizer, comprising at least one of hydrogen halide, ammonium halide, gallium halide, gallium tri halide, or a compound produced by chemical reactions between the hydrogen halide and one or more of ammonia (NH₃), gallium, or gallium nitride and is present at a concentration of 0.5 to 90 atomic % with respect to the ammonia in the GaN solvent. Previously presented
The method of forming a GaN single crystal of claim 21, further comprising providing a dopant source for doping of n-type, semi-insulating, or p-type GaN crystals, and wherein the dopant source comprises at least one dopant selected from H, Be, C, O, Si, Ge, Be, Mg, Zn, Ca, Sc, Ti, V, Cr, Mn, Fe, C o, Ni, Cu, Zr, Hf, and a rare earth metal. Previously presented
The method of forming a GaN single crystal of claim 21, further comprising providing a getter, wherein the getter comprises one or more of alkaline earth metals, Sc, Ti, V, Cr, Y, Zr, Nb, Hf, Ta, W, or a rare earth metal. Previously presented
The method of forming a GaN single crystal of claim 21, further comprising processing [[a]] at least one GaN single crystal into wafers. Currently amended
The method of forming a GaN single crystal of claim 21, further comprising: settin g, [[at]] for a third time period prior to the [[first]] second time period, a third temperature distribution in the chamber in which a third temperature gradient exists between a fifth temperature at the first end and a sixth temperature at the second end, wherein the third temperature gradient has a sign that is opposite to the sign of the first non-zero temperature gradient and the second non-zero temperature gradient. Currently amended
The method of forming a GaN single crystal of claim 21, wherein the second period is greater than six hours. New
The method of forming a GaN single crystal of claim 21, wherein a difference between the first temperature and the second temperature is at least 3 degrees Celsius. New
The method of forming a GaN single crystal of claim 21, further comprising disposing a mineralizer within the chamber, wherein the mineralizer comprises fluorine. New
The method of forming a GaN single crystal of claim 21, wherein the growth temperature is between 550 degrees Celsius and 900 degrees Celsius. New
The method of forming a GaN single crystal of claim 21, wherein the second non-zero temperature gradient has the same sign as the first non-zero temperature gradient. New
Canceled
Canceled
The method of forming a GaN single crystal of claim [[22,]] 21, wherein a difference between the first temperature and the second temperature is 10 degrees Celsius or less. Currently amended
The method of forming a GaN single crystal of claim [[22,]] 21, wherein the first time period is at least 1 minut. Currently amended
The method of forming a GaN single crystal of claim 25, wherein the first time period is less than or equal to two hours. New
Canceled
Canceled
Materials described outside the worked examples.
GaN single crystal
GaN
ammonia (GaN solvent)
NH₃
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
N-H stretch infrared absorption peak | 3175 | GaN |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,975,492Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 20. Canceled
Canceled
A method of forming a GaN single crystal in a chamber having a first region having a first end and a second region having a second end, said method comprising: disposing a nucleation center in said first region and a GaN source material in said second region; pressurizing the chamber; heatin g the chamber to a g rowth temperature; establishing[[, at]] and holdin g for a first time period, which occurs after heatin g the chamber to the g rowth temperature, a first temperature distribution in said chamber in which a first non-zero temperature gradient exists between a first temperature at said first end and a second temperature at said second end; and establishing[[, at]] and holdin g for a second time period, which is subsequent to the first time period, a second temperature distribution in said chamber in which a second non-zero temperature gradient exists between a third temperature at said first end and a fourth temperature said second end, said third temperature being sufficient to cause growth of at least one GaN single crystal in said first region, and said fourth temperature being sufficient to cause etching of said GaN source material in said second region., wherein said second non-zero temperature gradient is larger in ma g nitude than the first non-zero temperature gradient. Currently amended
The method of forming a GaN single crystal of claim 21, wherein the nucleation center comprises one or more GaN single crystal seeds. Previously presented
The method of forming a GaN single crystal of claim 21, wherein the GaN single crystal is grown at a rate of at least 5 micrometers per hour. Previously presented
The method of forming a GaN single crystal of claim 21, wherein the GaN single crystal is grown at a rate of at least [[10]] 11.3 micrometers per hour. Currently amended
The method of forming a GaN single crystal of claim 21, wherein the GaN single crystal formed has a maximum dimension of at least 2 millimeters, a dislocation density of less than 10 4 cm- 2, and substantially no tilt boundaries. Previously presented
The method of forming a GaN single crystal of claim 21, further comprising disposing a mineralizer within the chamber, wherein the mineralizer comprises at least one of: alkali and alkaline-earth nitrides, amides, urea and related compounds, ammonium salts, rare earth salts, halide salts, sulfide salts, nitrate salts, azide salts, compounds formed by chemical reaction of Ga and/or GaN with at least one of the above, and mixtures thereof. Previously presented
The method of forming a GaN single crystal of claim 21, wherein the GaN solvent comprises ammonia and further comprises a mineralizer, comprising at least one of hydrogen halide, ammonium halide, gallium halide, gallium tri halide, or a compound produced by chemical reactions between the hydrogen halide and one or more of ammonia (NH₃), gallium, or gallium nitride and is present at a concentration of 0.5 to 90 atomic % with respect to the ammonia in the GaN solvent. Previously presented
The method of forming a GaN single crystal of claim 21, further comprising providing a dopant source for doping of n-type, semi-insulating, or p-type GaN crystals, and wherein the dopant source comprises at least one dopant selected from H, Be, C, O, Si, Ge, Be, Mg, Zn, Ca, Sc, Ti, V, Cr, Mn, Fe, C o, Ni, Cu, Zr, Hf, and a rare earth metal. Previously presented
The method of forming a GaN single crystal of claim 21, further comprising providing a getter, wherein the getter comprises one or more of alkaline earth metals, Sc, Ti, V, Cr, Y, Zr, Nb, Hf, Ta, W, or a rare earth metal. Previously presented
The method of forming a GaN single crystal of claim 21, further comprising processing [[a]] at least one GaN single crystal into wafers. Currently amended
The method of forming a GaN single crystal of claim 21, further comprising: settin g, [[at]] for a third time period prior to the [[first]] second time period, a third temperature distribution in the chamber in which a third temperature gradient exists between a fifth temperature at the first end and a sixth temperature at the second end, wherein the third temperature gradient has a sign that is opposite to the sign of the first non-zero temperature gradient and the second non-zero temperature gradient. Currently amended
The method of forming a GaN single crystal of claim 21, wherein the second period is greater than six hours. New
The method of forming a GaN single crystal of claim 21, wherein a difference between the first temperature and the second temperature is at least 3 degrees Celsius. New
The method of forming a GaN single crystal of claim 21, further comprising disposing a mineralizer within the chamber, wherein the mineralizer comprises fluorine. New
The method of forming a GaN single crystal of claim 21, wherein the growth temperature is between 550 degrees Celsius and 900 degrees Celsius. New
The method of forming a GaN single crystal of claim 21, wherein the second non-zero temperature gradient has the same sign as the first non-zero temperature gradient. New
Canceled
Canceled
The method of forming a GaN single crystal of claim [[22,]] 21, wherein a difference between the first temperature and the second temperature is 10 degrees Celsius or less. Currently amended
The method of forming a GaN single crystal of claim [[22,]] 21, wherein the first time period is at least 1 minut. Currently amended
The method of forming a GaN single crystal of claim 25, wherein the first time period is less than or equal to two hours. New
Canceled
Canceled
Materials described outside the worked examples.
GaN single crystal
GaN
ammonia (GaN solvent)
NH₃
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
N-H stretch infrared absorption peak | 3175 | GaN |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,975,492Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 20. Canceled
Canceled
A method of forming a GaN single crystal in a chamber having a first region having a first end and a second region having a second end, said method comprising: disposing a nucleation center in said first region and a GaN source material in said second region; pressurizing the chamber; heatin g the chamber to a g rowth temperature; establishing[[, at]] and holdin g for a first time period, which occurs after heatin g the chamber to the g rowth temperature, a first temperature distribution in said chamber in which a first non-zero temperature gradient exists between a first temperature at said first end and a second temperature at said second end; and establishing[[, at]] and holdin g for a second time period, which is subsequent to the first time period, a second temperature distribution in said chamber in which a second non-zero temperature gradient exists between a third temperature at said first end and a fourth temperature said second end, said third temperature being sufficient to cause growth of at least one GaN single crystal in said first region, and said fourth temperature being sufficient to cause etching of said GaN source material in said second region., wherein said second non-zero temperature gradient is larger in ma g nitude than the first non-zero temperature gradient. Currently amended
The method of forming a GaN single crystal of claim 21, wherein the nucleation center comprises one or more GaN single crystal seeds. Previously presented
The method of forming a GaN single crystal of claim 21, wherein the GaN single crystal is grown at a rate of at least 5 micrometers per hour. Previously presented
The method of forming a GaN single crystal of claim 21, wherein the GaN single crystal is grown at a rate of at least [[10]] 11.3 micrometers per hour. Currently amended
The method of forming a GaN single crystal of claim 21, wherein the GaN single crystal formed has a maximum dimension of at least 2 millimeters, a dislocation density of less than 10 4 cm- 2, and substantially no tilt boundaries. Previously presented
The method of forming a GaN single crystal of claim 21, further comprising disposing a mineralizer within the chamber, wherein the mineralizer comprises at least one of: alkali and alkaline-earth nitrides, amides, urea and related compounds, ammonium salts, rare earth salts, halide salts, sulfide salts, nitrate salts, azide salts, compounds formed by chemical reaction of Ga and/or GaN with at least one of the above, and mixtures thereof. Previously presented
The method of forming a GaN single crystal of claim 21, wherein the GaN solvent comprises ammonia and further comprises a mineralizer, comprising at least one of hydrogen halide, ammonium halide, gallium halide, gallium tri halide, or a compound produced by chemical reactions between the hydrogen halide and one or more of ammonia (NH₃), gallium, or gallium nitride and is present at a concentration of 0.5 to 90 atomic % with respect to the ammonia in the GaN solvent. Previously presented
The method of forming a GaN single crystal of claim 21, further comprising providing a dopant source for doping of n-type, semi-insulating, or p-type GaN crystals, and wherein the dopant source comprises at least one dopant selected from H, Be, C, O, Si, Ge, Be, Mg, Zn, Ca, Sc, Ti, V, Cr, Mn, Fe, C o, Ni, Cu, Zr, Hf, and a rare earth metal. Previously presented
The method of forming a GaN single crystal of claim 21, further comprising providing a getter, wherein the getter comprises one or more of alkaline earth metals, Sc, Ti, V, Cr, Y, Zr, Nb, Hf, Ta, W, or a rare earth metal. Previously presented
The method of forming a GaN single crystal of claim 21, further comprising processing [[a]] at least one GaN single crystal into wafers. Currently amended
The method of forming a GaN single crystal of claim 21, further comprising: settin g, [[at]] for a third time period prior to the [[first]] second time period, a third temperature distribution in the chamber in which a third temperature gradient exists between a fifth temperature at the first end and a sixth temperature at the second end, wherein the third temperature gradient has a sign that is opposite to the sign of the first non-zero temperature gradient and the second non-zero temperature gradient. Currently amended
The method of forming a GaN single crystal of claim 21, wherein the second period is greater than six hours. New
The method of forming a GaN single crystal of claim 21, wherein a difference between the first temperature and the second temperature is at least 3 degrees Celsius. New
The method of forming a GaN single crystal of claim 21, further comprising disposing a mineralizer within the chamber, wherein the mineralizer comprises fluorine. New
The method of forming a GaN single crystal of claim 21, wherein the growth temperature is between 550 degrees Celsius and 900 degrees Celsius. New
The method of forming a GaN single crystal of claim 21, wherein the second non-zero temperature gradient has the same sign as the first non-zero temperature gradient. New
Canceled
Canceled
The method of forming a GaN single crystal of claim [[22,]] 21, wherein a difference between the first temperature and the second temperature is 10 degrees Celsius or less. Currently amended
The method of forming a GaN single crystal of claim [[22,]] 21, wherein the first time period is at least 1 minut. Currently amended
The method of forming a GaN single crystal of claim 25, wherein the first time period is less than or equal to two hours. New
Canceled
Canceled
Materials described outside the worked examples.
GaN single crystal
GaN
ammonia (GaN solvent)
NH₃
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
N-H stretch infrared absorption peak | 3175 | GaN |
Related documents with shared materials, methods, properties, or citations.
mineralizer
| 0.01 |
GaN |
maximum crystal dimension | 20 | GaN |
dislocation density (claimed) | — | GaN |
— | 3.38–3.45 eV | — |
Thickness | ≤ 5 cm | — |
Temperature | 0–200 °C | — |
Temperature | 200–900 °C | — |
Temperature | 600–1200 °C | — |
Duration | 0.001–36000 s | — |
Thickness | 10–300 nm | — |
Thickness | 3150–3200 cm | — |
Thickness | 3000–3150 cm | — |
Thickness | 3100–3500 cm | — |
Thickness | 465–700 nm | — |
Temperature | 250–300 K | — |
Temperature | 100–250 K | — |
Thickness | 2–2.75 mm | — |
Thickness | 3–5 mm | — |
Thickness | 5–10 mm | — |
Thickness | 10–25 mm | — |
Thickness | 25–600 mm | — |
Thickness | 100000–300000 nm | — |
Thickness | 0.3–1 mm | — |
Thickness | 1–1.5 mm | — |
Thickness | 1.5–10 mm | — |
Thickness | 0.01–0.05 mm | — |
Thickness | 0.05–5 mm | — |
Thickness | 2.75–3 mm | — |
Thickness | 5000000–10000000 nm | — |
Thickness | 1–2 cm | — |
Thickness | 2–7.5 cm | — |
Thickness | 7.5–10 cm | — |
— | 3.38–3.41 eV | — |
Thickness | 3050–3300 cm | — |
Temperature | 800–1500 °C | — |
Thickness | 3100–3470 cm | — |
Thickness | 300–400 mm | — |
Thickness | ≤ 10000 cm | — |
Thickness | ≤ 1 cm | — |
Temperature | ≤ 250 K | — |
Temperature | ≤ 1 K | — |
Pressure | ≤ 15 pa | — |
Pressure | ≤ 1.5 pa | — |
Pressure | ≤ 1 bar | — |
Thickness | ≤ 365 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≤ 1 µm | — |
Thickness | ≥ 1 mm | — |
Thickness | ≥ 0.01 cm | — |
Thickness | ≥ 25 mm | — |
Thickness | ≥ 1 µm | — |
Thickness | ≥ 10 mm | — |
Thickness | ≥ 2 mm | — |
Thickness | ≥ 10 cm | — |
Duration | ≥ 1 min | — |
Thickness | ≥ 5 µm | — |
GALLIUM NITRIDE-BASED SINTERED BODY AND METHOD FOR MANUFACTURING SAME
mineralizer
| 0.01 |
GaN |
maximum crystal dimension | 20 | GaN |
dislocation density (claimed) | — | GaN |
— | 3.38–3.45 eV | — |
Thickness | ≤ 5 cm | — |
Temperature | 0–200 °C | — |
Temperature | 200–900 °C | — |
Temperature | 600–1200 °C | — |
Duration | 0.001–36000 s | — |
Thickness | 10–300 nm | — |
Thickness | 3150–3200 cm | — |
Thickness | 3000–3150 cm | — |
Thickness | 3100–3500 cm | — |
Thickness | 465–700 nm | — |
Temperature | 250–300 K | — |
Temperature | 100–250 K | — |
Thickness | 2–2.75 mm | — |
Thickness | 3–5 mm | — |
Thickness | 5–10 mm | — |
Thickness | 10–25 mm | — |
Thickness | 25–600 mm | — |
Thickness | 100000–300000 nm | — |
Thickness | 0.3–1 mm | — |
Thickness | 1–1.5 mm | — |
Thickness | 1.5–10 mm | — |
Thickness | 0.01–0.05 mm | — |
Thickness | 0.05–5 mm | — |
Thickness | 2.75–3 mm | — |
Thickness | 5000000–10000000 nm | — |
Thickness | 1–2 cm | — |
Thickness | 2–7.5 cm | — |
Thickness | 7.5–10 cm | — |
— | 3.38–3.41 eV | — |
Thickness | 3050–3300 cm | — |
Temperature | 800–1500 °C | — |
Thickness | 3100–3470 cm | — |
Thickness | 300–400 mm | — |
Thickness | ≤ 10000 cm | — |
Thickness | ≤ 1 cm | — |
Temperature | ≤ 250 K | — |
Temperature | ≤ 1 K | — |
Pressure | ≤ 15 pa | — |
Pressure | ≤ 1.5 pa | — |
Pressure | ≤ 1 bar | — |
Thickness | ≤ 365 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≤ 1 µm | — |
Thickness | ≥ 1 mm | — |
Thickness | ≥ 0.01 cm | — |
Thickness | ≥ 25 mm | — |
Thickness | ≥ 1 µm | — |
Thickness | ≥ 10 mm | — |
Thickness | ≥ 2 mm | — |
Thickness | ≥ 10 cm | — |
Duration | ≥ 1 min | — |
Thickness | ≥ 5 µm | — |
GALLIUM NITRIDE-BASED SINTERED BODY AND METHOD FOR MANUFACTURING SAME
mineralizer
| 0.01 |
GaN |
maximum crystal dimension | 20 | GaN |
dislocation density (claimed) | — | GaN |
— | 3.38–3.45 eV | — |
Thickness | ≤ 5 cm | — |
Temperature | 0–200 °C | — |
Temperature | 200–900 °C | — |
Temperature | 600–1200 °C | — |
Duration | 0.001–36000 s | — |
Thickness | 10–300 nm | — |
Thickness | 3150–3200 cm | — |
Thickness | 3000–3150 cm | — |
Thickness | 3100–3500 cm | — |
Thickness | 465–700 nm | — |
Temperature | 250–300 K | — |
Temperature | 100–250 K | — |
Thickness | 2–2.75 mm | — |
Thickness | 3–5 mm | — |
Thickness | 5–10 mm | — |
Thickness | 10–25 mm | — |
Thickness | 25–600 mm | — |
Thickness | 100000–300000 nm | — |
Thickness | 0.3–1 mm | — |
Thickness | 1–1.5 mm | — |
Thickness | 1.5–10 mm | — |
Thickness | 0.01–0.05 mm | — |
Thickness | 0.05–5 mm | — |
Thickness | 2.75–3 mm | — |
Thickness | 5000000–10000000 nm | — |
Thickness | 1–2 cm | — |
Thickness | 2–7.5 cm | — |
Thickness | 7.5–10 cm | — |
— | 3.38–3.41 eV | — |
Thickness | 3050–3300 cm | — |
Temperature | 800–1500 °C | — |
Thickness | 3100–3470 cm | — |
Thickness | 300–400 mm | — |
Thickness | ≤ 10000 cm | — |
Thickness | ≤ 1 cm | — |
Temperature | ≤ 250 K | — |
Temperature | ≤ 1 K | — |
Pressure | ≤ 15 pa | — |
Pressure | ≤ 1.5 pa | — |
Pressure | ≤ 1 bar | — |
Thickness | ≤ 365 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≤ 1 µm | — |
Thickness | ≥ 1 mm | — |
Thickness | ≥ 0.01 cm | — |
Thickness | ≥ 25 mm | — |
Thickness | ≥ 1 µm | — |
Thickness | ≥ 10 mm | — |
Thickness | ≥ 2 mm | — |
Thickness | ≥ 10 cm | — |
Duration | ≥ 1 min | — |
Thickness | ≥ 5 µm | — |
GALLIUM NITRIDE-BASED SINTERED BODY AND METHOD FOR MANUFACTURING SAME
mineralizer
| 0.01 |
GaN |
maximum crystal dimension | 20 | GaN |
dislocation density (claimed) | — | GaN |
— | 3.38–3.45 eV | — |
Thickness | ≤ 5 cm | — |
Temperature | 0–200 °C | — |
Temperature | 200–900 °C | — |
Temperature | 600–1200 °C | — |
Duration | 0.001–36000 s | — |
Thickness | 10–300 nm | — |
Thickness | 3150–3200 cm | — |
Thickness | 3000–3150 cm | — |
Thickness | 3100–3500 cm | — |
Thickness | 465–700 nm | — |
Temperature | 250–300 K | — |
Temperature | 100–250 K | — |
Thickness | 2–2.75 mm | — |
Thickness | 3–5 mm | — |
Thickness | 5–10 mm | — |
Thickness | 10–25 mm | — |
Thickness | 25–600 mm | — |
Thickness | 100000–300000 nm | — |
Thickness | 0.3–1 mm | — |
Thickness | 1–1.5 mm | — |
Thickness | 1.5–10 mm | — |
Thickness | 0.01–0.05 mm | — |
Thickness | 0.05–5 mm | — |
Thickness | 2.75–3 mm | — |
Thickness | 5000000–10000000 nm | — |
Thickness | 1–2 cm | — |
Thickness | 2–7.5 cm | — |
Thickness | 7.5–10 cm | — |
— | 3.38–3.41 eV | — |
Thickness | 3050–3300 cm | — |
Temperature | 800–1500 °C | — |
Thickness | 3100–3470 cm | — |
Thickness | 300–400 mm | — |
Thickness | ≤ 10000 cm | — |
Thickness | ≤ 1 cm | — |
Temperature | ≤ 250 K | — |
Temperature | ≤ 1 K | — |
Pressure | ≤ 15 pa | — |
Pressure | ≤ 1.5 pa | — |
Pressure | ≤ 1 bar | — |
Thickness | ≤ 365 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≤ 1 µm | — |
Thickness | ≥ 1 mm | — |
Thickness | ≥ 0.01 cm | — |
Thickness | ≥ 25 mm | — |
Thickness | ≥ 1 µm | — |
Thickness | ≥ 10 mm | — |
Thickness | ≥ 2 mm | — |
Thickness | ≥ 10 cm | — |
Duration | ≥ 1 min | — |
Thickness | ≥ 5 µm | — |
GALLIUM NITRIDE-BASED SINTERED BODY AND METHOD FOR MANUFACTURING SAME