A device, comprising: a semiconductor substrate; a microfluidic chamber formed on the substrate; and a graphene layer forming a wall of the microfluidic chamber and configured to act as a channel region of a field-effect transistor, the graphene layer directly contacting the substrate, a first electrode configured to act as a source of the field-effect transistor; and a second electrode configured to act as a drain of the field-effect transistor, wherein the first and second electrodes are positioned on the substrate on opposite sides of the microfluidic chamber, and wherein the graphene layer is formed over the first and second electrodes and extends outside a region between the first and second electrodes.

canceled

canceled

The device of claim- 2 1, comprising a third electrode at least partially disposed within the microfluidic chamber and configured to act as a gate of the field-effect transistor, the third electrode being spaced apart from the graphene layer, the third electrode at least partially disposed in an air gap configured to receive a fluid.

A device, comprising: a substrate; a first electrode on the substrate, the first electrode configured to act as a source of a field-effect transistor; 3 Application No. 14/986,123 Reply to Office Action dated a second electrode on the substrate, the second electrode configured to act as a drain of the field-effect transistor; a graphene layer on the substrate and the first and second electrodes, the graphene layer configured to act as a channel region of the field-effect transistor, the graphene layer being formed over the first and second electrodes and extending outside a region between the first and second electrodes; and a structural layer on the graphene layer; a microfluidic chamber, wherein the structural layer and the graphene layer form at least one wall of the microfluidic chamber, and wherein the first and second electrodes are on opposite sides of the microfluidic chamber.

A method, comprising: laminating a first layer of dry resist onto a graphene layer; laminating the graphene layer and the first layer of dry resist onto a substrate that includes a first electrode configured to act as a source of the field-effect transistor and a second electrode configured to act as a drain of the field-effect transistor, wherein the graphene layer is configured to act as a channel of the field-effect transistor; and removing at least one portion of the first layer of dry resist to form a microfluidic chamber, wherein each of the first layer of dry resist and the graphene layer forms at least one wall of the microfluidic chamber.

A device, comprising: a semiconductor substrate; a microfluidic chamber formed on the substrate; and a graphene layer forming a wall of the microfluidic chamber and configured to act as a channel region of a field-effect transistor, the graphene layer directly contacting the substrate, a first electrode configured to act as a source of the field-effect transistor; and a second electrode configured to act as a drain of the field-effect transistor, wherein the first and second electrodes are positioned on the substrate on opposite sides of the microfluidic chamber, and wherein the graphene layer is formed over the first and second electrodes and extends outside a region between the first and second electrodes.

canceled

canceled

The device of claim- 2 1, comprising a third electrode at least partially disposed within the microfluidic chamber and configured to act as a gate of the field-effect transistor, the third electrode being spaced apart from the graphene layer, the third electrode at least partially disposed in an air gap configured to receive a fluid.

A device, comprising: a substrate; a first electrode on the substrate, the first electrode configured to act as a source of a field-effect transistor; 3 Application No. 14/986,123 Reply to Office Action dated a second electrode on the substrate, the second electrode configured to act as a drain of the field-effect transistor; a graphene layer on the substrate and the first and second electrodes, the graphene layer configured to act as a channel region of the field-effect transistor, the graphene layer being formed over the first and second electrodes and extending outside a region between the first and second electrodes; and a structural layer on the graphene layer; a microfluidic chamber, wherein the structural layer and the graphene layer form at least one wall of the microfluidic chamber, and wherein the first and second electrodes are on opposite sides of the microfluidic chamber.

A method, comprising: laminating a first layer of dry resist onto a graphene layer; laminating the graphene layer and the first layer of dry resist onto a substrate that includes a first electrode configured to act as a source of the field-effect transistor and a second electrode configured to act as a drain of the field-effect transistor, wherein the graphene layer is configured to act as a channel of the field-effect transistor; and removing at least one portion of the first layer of dry resist to form a microfluidic chamber, wherein each of the first layer of dry resist and the graphene layer forms at least one wall of the microfluidic chamber.

A device, comprising: a semiconductor substrate; a microfluidic chamber formed on the substrate; and a graphene layer forming a wall of the microfluidic chamber and configured to act as a channel region of a field-effect transistor, the graphene layer directly contacting the substrate, a first electrode configured to act as a source of the field-effect transistor; and a second electrode configured to act as a drain of the field-effect transistor, wherein the first and second electrodes are positioned on the substrate on opposite sides of the microfluidic chamber, and wherein the graphene layer is formed over the first and second electrodes and extends outside a region between the first and second electrodes.

canceled

canceled

The device of claim- 2 1, comprising a third electrode at least partially disposed within the microfluidic chamber and configured to act as a gate of the field-effect transistor, the third electrode being spaced apart from the graphene layer, the third electrode at least partially disposed in an air gap configured to receive a fluid.

A device, comprising: a substrate; a first electrode on the substrate, the first electrode configured to act as a source of a field-effect transistor; 3 Application No. 14/986,123 Reply to Office Action dated a second electrode on the substrate, the second electrode configured to act as a drain of the field-effect transistor; a graphene layer on the substrate and the first and second electrodes, the graphene layer configured to act as a channel region of the field-effect transistor, the graphene layer being formed over the first and second electrodes and extending outside a region between the first and second electrodes; and a structural layer on the graphene layer; a microfluidic chamber, wherein the structural layer and the graphene layer form at least one wall of the microfluidic chamber, and wherein the first and second electrodes are on opposite sides of the microfluidic chamber.

A method, comprising: laminating a first layer of dry resist onto a graphene layer; laminating the graphene layer and the first layer of dry resist onto a substrate that includes a first electrode configured to act as a source of the field-effect transistor and a second electrode configured to act as a drain of the field-effect transistor, wherein the graphene layer is configured to act as a channel of the field-effect transistor; and removing at least one portion of the first layer of dry resist to form a microfluidic chamber, wherein each of the first layer of dry resist and the graphene layer forms at least one wall of the microfluidic chamber.

A device, comprising: a semiconductor substrate; a microfluidic chamber formed on the substrate; and a graphene layer forming a wall of the microfluidic chamber and configured to act as a channel region of a field-effect transistor, the graphene layer directly contacting the substrate, a first electrode configured to act as a source of the field-effect transistor; and a second electrode configured to act as a drain of the field-effect transistor, wherein the first and second electrodes are positioned on the substrate on opposite sides of the microfluidic chamber, and wherein the graphene layer is formed over the first and second electrodes and extends outside a region between the first and second electrodes.

canceled

canceled

The device of claim- 2 1, comprising a third electrode at least partially disposed within the microfluidic chamber and configured to act as a gate of the field-effect transistor, the third electrode being spaced apart from the graphene layer, the third electrode at least partially disposed in an air gap configured to receive a fluid.

A device, comprising: a substrate; a first electrode on the substrate, the first electrode configured to act as a source of a field-effect transistor; 3 Application No. 14/986,123 Reply to Office Action dated a second electrode on the substrate, the second electrode configured to act as a drain of the field-effect transistor; a graphene layer on the substrate and the first and second electrodes, the graphene layer configured to act as a channel region of the field-effect transistor, the graphene layer being formed over the first and second electrodes and extending outside a region between the first and second electrodes; and a structural layer on the graphene layer; a microfluidic chamber, wherein the structural layer and the graphene layer form at least one wall of the microfluidic chamber, and wherein the first and second electrodes are on opposite sides of the microfluidic chamber.

A method, comprising: laminating a first layer of dry resist onto a graphene layer; laminating the graphene layer and the first layer of dry resist onto a substrate that includes a first electrode configured to act as a source of the field-effect transistor and a second electrode configured to act as a drain of the field-effect transistor, wherein the graphene layer is configured to act as a channel of the field-effect transistor; and removing at least one portion of the first layer of dry resist to form a microfluidic chamber, wherein each of the first layer of dry resist and the graphene layer forms at least one wall of the microfluidic chamber.