Patent
US 9,437,425METHODS FOR INTEGRATING LEAD AND GRAPHENE GROWTH AND DEVICES FORMED THEREFROM
Mark Alan
SOLAN, LLC·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,437,425Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, which illustrates a top view of an exemplary integrated graphite-based structure 100 fabricated by exemplary methods of the present disclosure. This …
FIG. 2C. As shown, element 104 -2 includes a lower portion formed by etching and an upper portion formed by deposition. Such an element can be fabricated …
FIG. 3 illustrates an exemplary integrated graphene device topography with dimensions for definition of an aspect ratio in accordance with an embodiment of the …
FIG. 4A. In addition to the plurality of elements, the exemplary integrated graphite-based structure 100 includes a plurality of trenches, such as trenches 106 …
FIGS. 5A-5 D illustrate alternative exemplary graphene device topographies fabricated by exemplary methods in accordance with an embodiment of the present …
FIGS. 6A-6 B illustrate other alternative exemplary graphene device topographies fabricated by exemplary methods in accordance with an embodiment of the …
FIG. 7B illustrates selective deposition of a graphene generation material on the etched tops of the elements, indicated by 706 -1, 706 -2, and on the bottoms …
FIGS. 8A-8 B illustrate an exemplary conformal method for depositing a lead on a selected surface of a defined topography in accordance with an embodiment of …
FIG. 9 have a first set of characteristic dimensions and the bottom graphene layer 410 -1 and 410 -2 have a second set of characteristic dimensions that …
FIG. 10 A, leads 402 -1, 404 -2 and 402 -3 are electrically connect to a common bus while leads 404 -1, 402 -2 and 404 -3 are electrically connected to another …
FIG. 11 illustrates yet another exemplary electrically-connected graphene device topography in accordance with an embodiment of the present disclosure. [0030]
FIGS. 12A-12B illustrate still another exemplary electrically-connected graphene device topography in accordance with an embodiment of the present disclosure. …
FIG. 13 illustrates another exemplary method 1300 for depositing a metallic layer on a selected surface or surfaces. As shown, the exemplary method 1300 …
FIG. 14 illustrates a flowchart of an exemplary method 1400 for integrating lead and graphene growth in accordance with an embodiment of the present disclosure. …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming an integrated graphite-based structure comprising: (A) patterning a substrate to form a plurality of elements and a plurality of trenches, each respective element in the plurality of elements separated from an adjacent element by a corresponding trench in the plurality of trenches, wherein (i) a first element in the plurality of elements is separated from an adjacent second element in the plurality of elements by a first trench, (ii) a top of the first element and a bottom of the first trench are separated by a right side wall of the first element, (iii) a top of the second element and the bottom of the first trench are separated by a left side wall of the second element, (iv) the bottom of the first trench is characterized by a trench width, (v) the right side wall of the first element is characterized by a right side height, and (vi) the left side wall of the second element is characterized by a left side height; and (B) depositing a metallic layer on the right side wall of the first element, the metallic layer on the right side wall of the first element having an upper end contacting the top of the first element and a lower end contacting the bottom of the first trench; (C) removing a layer from the top of the first element by anisotropically etching the first element, thereby producing an etched top that is lower than the top of the first element prior to etching and thereby exposing the upper end of the metallic layer on the right side wall of the first element; and (D) concurrently generating a first top graphene layer on the etched top of the first element and a first bottom graphene layer on the bottom of the first trench thereby forming said integrated graphite-based structure, wherein DB₂/26071098.1 Page 2 of 7 Application No. (Int'l) PCT/US₂₀₁₄/011155 Amendment dated: Preliminary Amendment (i) a right side of the first top graphene layer contacts the upper end of the metallic layer on the right side wall of the first element, and (ii) a left side of the first bottom graphene layer contacts the lower end of the metallic layer on the right side wall of the first element.
The method of claim 1, wherein the patterning the substrate to form the plurality of elements and the plurality of trenches comprises etching the first trench in the substrate.
The method of claim 1, wherein the patterning the substrate to form the plurality of elements and the plurality of trenches comprises depositing the first element and the second element on the substrate.
The method of claim 1, wherein the patterning the substrate to form the plurality of elements and the plurality of trenches comprises a combination of etching the first trench in the substrate and depositing the first element and the second element adjacent to the first trench.
The method of any one of claims 1-4 claim 1, wherein the substrate comprises a dielectric material, a semiconducting material, or a combination thereof.
The method of any one of claims 1-4 claim 1, wherein the substrate comprises glass, silicon dioxide, neoceram, or sapphire.
The method of any one of claims 1-4 claim 1, wherein the substrate comprises silicon (Si), silicon carbide (SiC), germanium (Ge), boron nitride (BN), or molybdenum sulfide (MoS).
The method of any one of claims 1-4 claim 1, wherein the substrate comprises silicon dioxide (SiO₂) glass, or soda lime glass formed from SiO2. DB₂/26071098.1 Page 3 of 7 Application No. (Int'l) PCT/US₂₀₁₄/011155 Amendment dated: Preliminary Amendment
The method of any one of claims 1-4 claim 1, wherein the substrate comprises silicon dioxide glass doped with boron, barium, thorium oxide (ThO₂), lanthanum oxide (La₂ O 3), iron or cerium (IV) oxide (Ce O 2).
The method of any one of claims 1-4 claim 1, wherein the substrate comprises aluminosilicate, borosilicate, dichroic, germanium/semiconductor, glass ceramic, silicate/fused silica, soda lime, quartz, or chalcogenide/sulphide glass.
The method of any one of claims 1-4 claim 1, wherein the substrate comprises silicon carbide, and the concurrently generating the first graphene layer on the etched top of the first element and the second graphene layer on the bottom of the first trench comprises heating the substrate.
The method of any one of claims 1-4 claim 1, wherein the substrate comprises silicon or silicon carbide, and the concurrently generating the first graphene layer on the etched top of the first element and the second graphene layer on the bottom of the first trench comprises: doping the etched top of the first element and the bottom of the first trench with carbon, and heating the substrate.
The method of claim 1, further comprising: depositing, subsequently to the removing but prior to the concurrently generating, a graphene generation material on the etched top of the first element and on the bottom of the first trench when the substrate is made of a dielectric material.
The method of claim 1 wherein the first graphene layer comprises between 3 and 500 graphene sheets, the second graphene layer comprises between 3 and 500 graphene sheets, between 3 and 500 graphene sheets in the first top graphene layer contacts the upper end of the metallic layer on the right side wall of the first element, and between 3 and 500 graphene sheets in the first bottom graphene layer contacts the lower end of the metallic layer on the right side wall of the first element.
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An integrated graphite-based structure, comprising: DB₂/26071098.1 Page 5 of 7 Application No. (Int'l) PCT/US₂₀₁₄/011155 Amendment dated: Preliminary Amendment a substrate comprising a first metal or metal alloy; a plurality of elements and a plurality of trenches disposed on the substrate, each respective element in the plurality of elements comprising a second metal or metal alloy and separated from an adjacent element in the plurality of elements by a corresponding trench in the plurality of trenches; an insulating layer comprising a first dielectric material, wherein the insulating layer is overlayed on the substrate and exposed portions of the plurality of elements; a plurality of top graphene layers, each respective top graphene layer in the plurality of top graphene layers formed on the portion of the insulating layer that is on a top surface of a corresponding element in the plurality of elements; a plurality of bottom graphene layers, each respective bottom graphene layer in the plurality of bottom graphene layers is overlaid on the portion of the in the plurality of trenches; and a plurality of layer in the plurality of metallic layers is formed side wall of a corresponding element in the plurality layer in the plurality of metallic layers contacts graphene layers at an upper end thereof and one graphene layers at a lower end thereof.
The integrated graphite-based structure of claim the second metal or metal alloy are the same.
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canceled insulating layer that is on the bottom of a trench metallic layers, wherein each respective metallic on the portion of the insulating layer coating a of elements, and each respective metallic one top graphene layer in the plurality of top bottom graphene layer in the plurality of bottom 0, wherein the first metal or metal alloy and
Layer stacks claimed or described, ordered top of device to substrate.
integrated graphite-based structure (method)
integrated graphite-based structure (apparatus)
Materials described outside the worked examples.
graphene layer
metallic layer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7B illustrates selective deposition of a graphene generation material on the etched tops of the elements, indicated by 706 -1, 706 -2, and on the bottoms …
Related documents with shared materials, methods, properties, or citations.
Graphene-Based Solid State Devices Capable of Emitting Electromagnetic Radiation and Improvements Thereof
Graphene and Nanotube/Nanowire Transistor with a Self-Aligned Gate Structure on Transparent Substrates and Method of Making Same
Patent
Atlas literature
Patent
US 9,437,425Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, which illustrates a top view of an exemplary integrated graphite-based structure 100 fabricated by exemplary methods of the present disclosure. This …
FIG. 2C. As shown, element 104 -2 includes a lower portion formed by etching and an upper portion formed by deposition. Such an element can be fabricated …
FIG. 3 illustrates an exemplary integrated graphene device topography with dimensions for definition of an aspect ratio in accordance with an embodiment of the …
FIG. 4A. In addition to the plurality of elements, the exemplary integrated graphite-based structure 100 includes a plurality of trenches, such as trenches 106 …
FIGS. 5A-5 D illustrate alternative exemplary graphene device topographies fabricated by exemplary methods in accordance with an embodiment of the present …
FIGS. 6A-6 B illustrate other alternative exemplary graphene device topographies fabricated by exemplary methods in accordance with an embodiment of the …
FIG. 7B illustrates selective deposition of a graphene generation material on the etched tops of the elements, indicated by 706 -1, 706 -2, and on the bottoms …
FIGS. 8A-8 B illustrate an exemplary conformal method for depositing a lead on a selected surface of a defined topography in accordance with an embodiment of …
FIG. 9 have a first set of characteristic dimensions and the bottom graphene layer 410 -1 and 410 -2 have a second set of characteristic dimensions that …
FIG. 10 A, leads 402 -1, 404 -2 and 402 -3 are electrically connect to a common bus while leads 404 -1, 402 -2 and 404 -3 are electrically connected to another …
FIG. 11 illustrates yet another exemplary electrically-connected graphene device topography in accordance with an embodiment of the present disclosure. [0030]
FIGS. 12A-12B illustrate still another exemplary electrically-connected graphene device topography in accordance with an embodiment of the present disclosure. …
FIG. 13 illustrates another exemplary method 1300 for depositing a metallic layer on a selected surface or surfaces. As shown, the exemplary method 1300 …
FIG. 14 illustrates a flowchart of an exemplary method 1400 for integrating lead and graphene growth in accordance with an embodiment of the present disclosure. …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming an integrated graphite-based structure comprising: (A) patterning a substrate to form a plurality of elements and a plurality of trenches, each respective element in the plurality of elements separated from an adjacent element by a corresponding trench in the plurality of trenches, wherein (i) a first element in the plurality of elements is separated from an adjacent second element in the plurality of elements by a first trench, (ii) a top of the first element and a bottom of the first trench are separated by a right side wall of the first element, (iii) a top of the second element and the bottom of the first trench are separated by a left side wall of the second element, (iv) the bottom of the first trench is characterized by a trench width, (v) the right side wall of the first element is characterized by a right side height, and (vi) the left side wall of the second element is characterized by a left side height; and (B) depositing a metallic layer on the right side wall of the first element, the metallic layer on the right side wall of the first element having an upper end contacting the top of the first element and a lower end contacting the bottom of the first trench; (C) removing a layer from the top of the first element by anisotropically etching the first element, thereby producing an etched top that is lower than the top of the first element prior to etching and thereby exposing the upper end of the metallic layer on the right side wall of the first element; and (D) concurrently generating a first top graphene layer on the etched top of the first element and a first bottom graphene layer on the bottom of the first trench thereby forming said integrated graphite-based structure, wherein DB₂/26071098.1 Page 2 of 7 Application No. (Int'l) PCT/US₂₀₁₄/011155 Amendment dated: Preliminary Amendment (i) a right side of the first top graphene layer contacts the upper end of the metallic layer on the right side wall of the first element, and (ii) a left side of the first bottom graphene layer contacts the lower end of the metallic layer on the right side wall of the first element.
The method of claim 1, wherein the patterning the substrate to form the plurality of elements and the plurality of trenches comprises etching the first trench in the substrate.
The method of claim 1, wherein the patterning the substrate to form the plurality of elements and the plurality of trenches comprises depositing the first element and the second element on the substrate.
The method of claim 1, wherein the patterning the substrate to form the plurality of elements and the plurality of trenches comprises a combination of etching the first trench in the substrate and depositing the first element and the second element adjacent to the first trench.
The method of any one of claims 1-4 claim 1, wherein the substrate comprises a dielectric material, a semiconducting material, or a combination thereof.
The method of any one of claims 1-4 claim 1, wherein the substrate comprises glass, silicon dioxide, neoceram, or sapphire.
The method of any one of claims 1-4 claim 1, wherein the substrate comprises silicon (Si), silicon carbide (SiC), germanium (Ge), boron nitride (BN), or molybdenum sulfide (MoS).
The method of any one of claims 1-4 claim 1, wherein the substrate comprises silicon dioxide (SiO₂) glass, or soda lime glass formed from SiO2. DB₂/26071098.1 Page 3 of 7 Application No. (Int'l) PCT/US₂₀₁₄/011155 Amendment dated: Preliminary Amendment
The method of any one of claims 1-4 claim 1, wherein the substrate comprises silicon dioxide glass doped with boron, barium, thorium oxide (ThO₂), lanthanum oxide (La₂ O 3), iron or cerium (IV) oxide (Ce O 2).
The method of any one of claims 1-4 claim 1, wherein the substrate comprises aluminosilicate, borosilicate, dichroic, germanium/semiconductor, glass ceramic, silicate/fused silica, soda lime, quartz, or chalcogenide/sulphide glass.
The method of any one of claims 1-4 claim 1, wherein the substrate comprises silicon carbide, and the concurrently generating the first graphene layer on the etched top of the first element and the second graphene layer on the bottom of the first trench comprises heating the substrate.
The method of any one of claims 1-4 claim 1, wherein the substrate comprises silicon or silicon carbide, and the concurrently generating the first graphene layer on the etched top of the first element and the second graphene layer on the bottom of the first trench comprises: doping the etched top of the first element and the bottom of the first trench with carbon, and heating the substrate.
The method of claim 1, further comprising: depositing, subsequently to the removing but prior to the concurrently generating, a graphene generation material on the etched top of the first element and on the bottom of the first trench when the substrate is made of a dielectric material.
The method of claim 1 wherein the first graphene layer comprises between 3 and 500 graphene sheets, the second graphene layer comprises between 3 and 500 graphene sheets, between 3 and 500 graphene sheets in the first top graphene layer contacts the upper end of the metallic layer on the right side wall of the first element, and between 3 and 500 graphene sheets in the first bottom graphene layer contacts the lower end of the metallic layer on the right side wall of the first element.
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An integrated graphite-based structure, comprising: DB₂/26071098.1 Page 5 of 7 Application No. (Int'l) PCT/US₂₀₁₄/011155 Amendment dated: Preliminary Amendment a substrate comprising a first metal or metal alloy; a plurality of elements and a plurality of trenches disposed on the substrate, each respective element in the plurality of elements comprising a second metal or metal alloy and separated from an adjacent element in the plurality of elements by a corresponding trench in the plurality of trenches; an insulating layer comprising a first dielectric material, wherein the insulating layer is overlayed on the substrate and exposed portions of the plurality of elements; a plurality of top graphene layers, each respective top graphene layer in the plurality of top graphene layers formed on the portion of the insulating layer that is on a top surface of a corresponding element in the plurality of elements; a plurality of bottom graphene layers, each respective bottom graphene layer in the plurality of bottom graphene layers is overlaid on the portion of the in the plurality of trenches; and a plurality of layer in the plurality of metallic layers is formed side wall of a corresponding element in the plurality layer in the plurality of metallic layers contacts graphene layers at an upper end thereof and one graphene layers at a lower end thereof.
The integrated graphite-based structure of claim the second metal or metal alloy are the same.
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Layer stacks claimed or described, ordered top of device to substrate.
integrated graphite-based structure (method)
integrated graphite-based structure (apparatus)
Materials described outside the worked examples.
graphene layer
metallic layer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7B illustrates selective deposition of a graphene generation material on the etched tops of the elements, indicated by 706 -1, 706 -2, and on the bottoms …
Related documents with shared materials, methods, properties, or citations.
Graphene-Based Solid State Devices Capable of Emitting Electromagnetic Radiation and Improvements Thereof
Graphene and Nanotube/Nanowire Transistor with a Self-Aligned Gate Structure on Transparent Substrates and Method of Making Same
Patent
Atlas literature
Patent
US 9,437,425Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, which illustrates a top view of an exemplary integrated graphite-based structure 100 fabricated by exemplary methods of the present disclosure. This …
FIG. 2C. As shown, element 104 -2 includes a lower portion formed by etching and an upper portion formed by deposition. Such an element can be fabricated …
FIG. 3 illustrates an exemplary integrated graphene device topography with dimensions for definition of an aspect ratio in accordance with an embodiment of the …
FIG. 4A. In addition to the plurality of elements, the exemplary integrated graphite-based structure 100 includes a plurality of trenches, such as trenches 106 …
FIGS. 5A-5 D illustrate alternative exemplary graphene device topographies fabricated by exemplary methods in accordance with an embodiment of the present …
FIGS. 6A-6 B illustrate other alternative exemplary graphene device topographies fabricated by exemplary methods in accordance with an embodiment of the …
FIG. 7B illustrates selective deposition of a graphene generation material on the etched tops of the elements, indicated by 706 -1, 706 -2, and on the bottoms …
FIGS. 8A-8 B illustrate an exemplary conformal method for depositing a lead on a selected surface of a defined topography in accordance with an embodiment of …
FIG. 9 have a first set of characteristic dimensions and the bottom graphene layer 410 -1 and 410 -2 have a second set of characteristic dimensions that …
FIG. 10 A, leads 402 -1, 404 -2 and 402 -3 are electrically connect to a common bus while leads 404 -1, 402 -2 and 404 -3 are electrically connected to another …
FIG. 11 illustrates yet another exemplary electrically-connected graphene device topography in accordance with an embodiment of the present disclosure. [0030]
FIGS. 12A-12B illustrate still another exemplary electrically-connected graphene device topography in accordance with an embodiment of the present disclosure. …
FIG. 13 illustrates another exemplary method 1300 for depositing a metallic layer on a selected surface or surfaces. As shown, the exemplary method 1300 …
FIG. 14 illustrates a flowchart of an exemplary method 1400 for integrating lead and graphene growth in accordance with an embodiment of the present disclosure. …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming an integrated graphite-based structure comprising: (A) patterning a substrate to form a plurality of elements and a plurality of trenches, each respective element in the plurality of elements separated from an adjacent element by a corresponding trench in the plurality of trenches, wherein (i) a first element in the plurality of elements is separated from an adjacent second element in the plurality of elements by a first trench, (ii) a top of the first element and a bottom of the first trench are separated by a right side wall of the first element, (iii) a top of the second element and the bottom of the first trench are separated by a left side wall of the second element, (iv) the bottom of the first trench is characterized by a trench width, (v) the right side wall of the first element is characterized by a right side height, and (vi) the left side wall of the second element is characterized by a left side height; and (B) depositing a metallic layer on the right side wall of the first element, the metallic layer on the right side wall of the first element having an upper end contacting the top of the first element and a lower end contacting the bottom of the first trench; (C) removing a layer from the top of the first element by anisotropically etching the first element, thereby producing an etched top that is lower than the top of the first element prior to etching and thereby exposing the upper end of the metallic layer on the right side wall of the first element; and (D) concurrently generating a first top graphene layer on the etched top of the first element and a first bottom graphene layer on the bottom of the first trench thereby forming said integrated graphite-based structure, wherein DB₂/26071098.1 Page 2 of 7 Application No. (Int'l) PCT/US₂₀₁₄/011155 Amendment dated: Preliminary Amendment (i) a right side of the first top graphene layer contacts the upper end of the metallic layer on the right side wall of the first element, and (ii) a left side of the first bottom graphene layer contacts the lower end of the metallic layer on the right side wall of the first element.
The method of claim 1, wherein the patterning the substrate to form the plurality of elements and the plurality of trenches comprises etching the first trench in the substrate.
The method of claim 1, wherein the patterning the substrate to form the plurality of elements and the plurality of trenches comprises depositing the first element and the second element on the substrate.
The method of claim 1, wherein the patterning the substrate to form the plurality of elements and the plurality of trenches comprises a combination of etching the first trench in the substrate and depositing the first element and the second element adjacent to the first trench.
The method of any one of claims 1-4 claim 1, wherein the substrate comprises a dielectric material, a semiconducting material, or a combination thereof.
The method of any one of claims 1-4 claim 1, wherein the substrate comprises glass, silicon dioxide, neoceram, or sapphire.
The method of any one of claims 1-4 claim 1, wherein the substrate comprises silicon (Si), silicon carbide (SiC), germanium (Ge), boron nitride (BN), or molybdenum sulfide (MoS).
The method of any one of claims 1-4 claim 1, wherein the substrate comprises silicon dioxide (SiO₂) glass, or soda lime glass formed from SiO2. DB₂/26071098.1 Page 3 of 7 Application No. (Int'l) PCT/US₂₀₁₄/011155 Amendment dated: Preliminary Amendment
The method of any one of claims 1-4 claim 1, wherein the substrate comprises silicon dioxide glass doped with boron, barium, thorium oxide (ThO₂), lanthanum oxide (La₂ O 3), iron or cerium (IV) oxide (Ce O 2).
The method of any one of claims 1-4 claim 1, wherein the substrate comprises aluminosilicate, borosilicate, dichroic, germanium/semiconductor, glass ceramic, silicate/fused silica, soda lime, quartz, or chalcogenide/sulphide glass.
The method of any one of claims 1-4 claim 1, wherein the substrate comprises silicon carbide, and the concurrently generating the first graphene layer on the etched top of the first element and the second graphene layer on the bottom of the first trench comprises heating the substrate.
The method of any one of claims 1-4 claim 1, wherein the substrate comprises silicon or silicon carbide, and the concurrently generating the first graphene layer on the etched top of the first element and the second graphene layer on the bottom of the first trench comprises: doping the etched top of the first element and the bottom of the first trench with carbon, and heating the substrate.
The method of claim 1, further comprising: depositing, subsequently to the removing but prior to the concurrently generating, a graphene generation material on the etched top of the first element and on the bottom of the first trench when the substrate is made of a dielectric material.
The method of claim 1 wherein the first graphene layer comprises between 3 and 500 graphene sheets, the second graphene layer comprises between 3 and 500 graphene sheets, between 3 and 500 graphene sheets in the first top graphene layer contacts the upper end of the metallic layer on the right side wall of the first element, and between 3 and 500 graphene sheets in the first bottom graphene layer contacts the lower end of the metallic layer on the right side wall of the first element.
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An integrated graphite-based structure, comprising: DB₂/26071098.1 Page 5 of 7 Application No. (Int'l) PCT/US₂₀₁₄/011155 Amendment dated: Preliminary Amendment a substrate comprising a first metal or metal alloy; a plurality of elements and a plurality of trenches disposed on the substrate, each respective element in the plurality of elements comprising a second metal or metal alloy and separated from an adjacent element in the plurality of elements by a corresponding trench in the plurality of trenches; an insulating layer comprising a first dielectric material, wherein the insulating layer is overlayed on the substrate and exposed portions of the plurality of elements; a plurality of top graphene layers, each respective top graphene layer in the plurality of top graphene layers formed on the portion of the insulating layer that is on a top surface of a corresponding element in the plurality of elements; a plurality of bottom graphene layers, each respective bottom graphene layer in the plurality of bottom graphene layers is overlaid on the portion of the in the plurality of trenches; and a plurality of layer in the plurality of metallic layers is formed side wall of a corresponding element in the plurality layer in the plurality of metallic layers contacts graphene layers at an upper end thereof and one graphene layers at a lower end thereof.
The integrated graphite-based structure of claim the second metal or metal alloy are the same.
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canceled insulating layer that is on the bottom of a trench metallic layers, wherein each respective metallic on the portion of the insulating layer coating a of elements, and each respective metallic one top graphene layer in the plurality of top bottom graphene layer in the plurality of bottom 0, wherein the first metal or metal alloy and
Layer stacks claimed or described, ordered top of device to substrate.
integrated graphite-based structure (method)
integrated graphite-based structure (apparatus)
Materials described outside the worked examples.
graphene layer
metallic layer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7B illustrates selective deposition of a graphene generation material on the etched tops of the elements, indicated by 706 -1, 706 -2, and on the bottoms …
Related documents with shared materials, methods, properties, or citations.
Graphene-Based Solid State Devices Capable of Emitting Electromagnetic Radiation and Improvements Thereof
Graphene and Nanotube/Nanowire Transistor with a Self-Aligned Gate Structure on Transparent Substrates and Method of Making Same
Patent
Atlas literature
Patent
US 9,437,425Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, which illustrates a top view of an exemplary integrated graphite-based structure 100 fabricated by exemplary methods of the present disclosure. This …
FIG. 2C. As shown, element 104 -2 includes a lower portion formed by etching and an upper portion formed by deposition. Such an element can be fabricated …
FIG. 3 illustrates an exemplary integrated graphene device topography with dimensions for definition of an aspect ratio in accordance with an embodiment of the …
FIG. 4A. In addition to the plurality of elements, the exemplary integrated graphite-based structure 100 includes a plurality of trenches, such as trenches 106 …
FIGS. 5A-5 D illustrate alternative exemplary graphene device topographies fabricated by exemplary methods in accordance with an embodiment of the present …
FIGS. 6A-6 B illustrate other alternative exemplary graphene device topographies fabricated by exemplary methods in accordance with an embodiment of the …
FIG. 7B illustrates selective deposition of a graphene generation material on the etched tops of the elements, indicated by 706 -1, 706 -2, and on the bottoms …
FIGS. 8A-8 B illustrate an exemplary conformal method for depositing a lead on a selected surface of a defined topography in accordance with an embodiment of …
FIG. 9 have a first set of characteristic dimensions and the bottom graphene layer 410 -1 and 410 -2 have a second set of characteristic dimensions that …
FIG. 10 A, leads 402 -1, 404 -2 and 402 -3 are electrically connect to a common bus while leads 404 -1, 402 -2 and 404 -3 are electrically connected to another …
FIG. 11 illustrates yet another exemplary electrically-connected graphene device topography in accordance with an embodiment of the present disclosure. [0030]
FIGS. 12A-12B illustrate still another exemplary electrically-connected graphene device topography in accordance with an embodiment of the present disclosure. …
FIG. 13 illustrates another exemplary method 1300 for depositing a metallic layer on a selected surface or surfaces. As shown, the exemplary method 1300 …
FIG. 14 illustrates a flowchart of an exemplary method 1400 for integrating lead and graphene growth in accordance with an embodiment of the present disclosure. …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming an integrated graphite-based structure comprising: (A) patterning a substrate to form a plurality of elements and a plurality of trenches, each respective element in the plurality of elements separated from an adjacent element by a corresponding trench in the plurality of trenches, wherein (i) a first element in the plurality of elements is separated from an adjacent second element in the plurality of elements by a first trench, (ii) a top of the first element and a bottom of the first trench are separated by a right side wall of the first element, (iii) a top of the second element and the bottom of the first trench are separated by a left side wall of the second element, (iv) the bottom of the first trench is characterized by a trench width, (v) the right side wall of the first element is characterized by a right side height, and (vi) the left side wall of the second element is characterized by a left side height; and (B) depositing a metallic layer on the right side wall of the first element, the metallic layer on the right side wall of the first element having an upper end contacting the top of the first element and a lower end contacting the bottom of the first trench; (C) removing a layer from the top of the first element by anisotropically etching the first element, thereby producing an etched top that is lower than the top of the first element prior to etching and thereby exposing the upper end of the metallic layer on the right side wall of the first element; and (D) concurrently generating a first top graphene layer on the etched top of the first element and a first bottom graphene layer on the bottom of the first trench thereby forming said integrated graphite-based structure, wherein DB₂/26071098.1 Page 2 of 7 Application No. (Int'l) PCT/US₂₀₁₄/011155 Amendment dated: Preliminary Amendment (i) a right side of the first top graphene layer contacts the upper end of the metallic layer on the right side wall of the first element, and (ii) a left side of the first bottom graphene layer contacts the lower end of the metallic layer on the right side wall of the first element.
The method of claim 1, wherein the patterning the substrate to form the plurality of elements and the plurality of trenches comprises etching the first trench in the substrate.
The method of claim 1, wherein the patterning the substrate to form the plurality of elements and the plurality of trenches comprises depositing the first element and the second element on the substrate.
The method of claim 1, wherein the patterning the substrate to form the plurality of elements and the plurality of trenches comprises a combination of etching the first trench in the substrate and depositing the first element and the second element adjacent to the first trench.
The method of any one of claims 1-4 claim 1, wherein the substrate comprises a dielectric material, a semiconducting material, or a combination thereof.
The method of any one of claims 1-4 claim 1, wherein the substrate comprises glass, silicon dioxide, neoceram, or sapphire.
The method of any one of claims 1-4 claim 1, wherein the substrate comprises silicon (Si), silicon carbide (SiC), germanium (Ge), boron nitride (BN), or molybdenum sulfide (MoS).
The method of any one of claims 1-4 claim 1, wherein the substrate comprises silicon dioxide (SiO₂) glass, or soda lime glass formed from SiO2. DB₂/26071098.1 Page 3 of 7 Application No. (Int'l) PCT/US₂₀₁₄/011155 Amendment dated: Preliminary Amendment
The method of any one of claims 1-4 claim 1, wherein the substrate comprises silicon dioxide glass doped with boron, barium, thorium oxide (ThO₂), lanthanum oxide (La₂ O 3), iron or cerium (IV) oxide (Ce O 2).
The method of any one of claims 1-4 claim 1, wherein the substrate comprises aluminosilicate, borosilicate, dichroic, germanium/semiconductor, glass ceramic, silicate/fused silica, soda lime, quartz, or chalcogenide/sulphide glass.
The method of any one of claims 1-4 claim 1, wherein the substrate comprises silicon carbide, and the concurrently generating the first graphene layer on the etched top of the first element and the second graphene layer on the bottom of the first trench comprises heating the substrate.
The method of any one of claims 1-4 claim 1, wherein the substrate comprises silicon or silicon carbide, and the concurrently generating the first graphene layer on the etched top of the first element and the second graphene layer on the bottom of the first trench comprises: doping the etched top of the first element and the bottom of the first trench with carbon, and heating the substrate.
The method of claim 1, further comprising: depositing, subsequently to the removing but prior to the concurrently generating, a graphene generation material on the etched top of the first element and on the bottom of the first trench when the substrate is made of a dielectric material.
The method of claim 1 wherein the first graphene layer comprises between 3 and 500 graphene sheets, the second graphene layer comprises between 3 and 500 graphene sheets, between 3 and 500 graphene sheets in the first top graphene layer contacts the upper end of the metallic layer on the right side wall of the first element, and between 3 and 500 graphene sheets in the first bottom graphene layer contacts the lower end of the metallic layer on the right side wall of the first element.
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An integrated graphite-based structure, comprising: DB₂/26071098.1 Page 5 of 7 Application No. (Int'l) PCT/US₂₀₁₄/011155 Amendment dated: Preliminary Amendment a substrate comprising a first metal or metal alloy; a plurality of elements and a plurality of trenches disposed on the substrate, each respective element in the plurality of elements comprising a second metal or metal alloy and separated from an adjacent element in the plurality of elements by a corresponding trench in the plurality of trenches; an insulating layer comprising a first dielectric material, wherein the insulating layer is overlayed on the substrate and exposed portions of the plurality of elements; a plurality of top graphene layers, each respective top graphene layer in the plurality of top graphene layers formed on the portion of the insulating layer that is on a top surface of a corresponding element in the plurality of elements; a plurality of bottom graphene layers, each respective bottom graphene layer in the plurality of bottom graphene layers is overlaid on the portion of the in the plurality of trenches; and a plurality of layer in the plurality of metallic layers is formed side wall of a corresponding element in the plurality layer in the plurality of metallic layers contacts graphene layers at an upper end thereof and one graphene layers at a lower end thereof.
The integrated graphite-based structure of claim the second metal or metal alloy are the same.
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Layer stacks claimed or described, ordered top of device to substrate.
integrated graphite-based structure (method)
integrated graphite-based structure (apparatus)
Materials described outside the worked examples.
graphene layer
metallic layer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7B illustrates selective deposition of a graphene generation material on the etched tops of the elements, indicated by 706 -1, 706 -2, and on the bottoms …
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substrate
dielectric material or semiconducting material
glass
silicon dioxide
SiO₂
neoceram
sapphire
silicon
Si
silicon carbide
SiC
germanium
Ge
boron nitride
BN
molybdenum sulfide
MoS
soda lime glass
graphene generation material
dielectric insulating layer material
FIG. 9 have a first set of characteristic dimensions and the bottom graphene layer 410 -1 and 410 -2 have a second set of characteristic dimensions that …
FIG. 9 have a first set of characteristic dimensions and the bottom graphene layer 410 -1 and 410 -2 have a second set of characteristic dimensions that …
FIG. 10 A, leads 402 -1, 404 -2 and 402 -3 are electrically connect to a common bus while leads 404 -1, 402 -2 and 404 -3 are electrically connected to another …
FIG. 11 illustrates yet another exemplary electrically-connected graphene device topography in accordance with an embodiment of the present disclosure. [0030]
FIGS. 12A-12B illustrate still another exemplary electrically-connected graphene device topography in accordance with an embodiment of the present disclosure. …
substrate
dielectric material or semiconducting material
glass
silicon dioxide
SiO₂
neoceram
sapphire
silicon
Si
silicon carbide
SiC
germanium
Ge
boron nitride
BN
molybdenum sulfide
MoS
soda lime glass
graphene generation material
dielectric insulating layer material
FIG. 9 have a first set of characteristic dimensions and the bottom graphene layer 410 -1 and 410 -2 have a second set of characteristic dimensions that …
FIG. 9 have a first set of characteristic dimensions and the bottom graphene layer 410 -1 and 410 -2 have a second set of characteristic dimensions that …
FIG. 10 A, leads 402 -1, 404 -2 and 402 -3 are electrically connect to a common bus while leads 404 -1, 402 -2 and 404 -3 are electrically connected to another …
FIG. 11 illustrates yet another exemplary electrically-connected graphene device topography in accordance with an embodiment of the present disclosure. [0030]
FIGS. 12A-12B illustrate still another exemplary electrically-connected graphene device topography in accordance with an embodiment of the present disclosure. …
substrate
dielectric material or semiconducting material
glass
silicon dioxide
SiO₂
neoceram
sapphire
silicon
Si
silicon carbide
SiC
germanium
Ge
boron nitride
BN
molybdenum sulfide
MoS
soda lime glass
graphene generation material
dielectric insulating layer material
FIG. 9 have a first set of characteristic dimensions and the bottom graphene layer 410 -1 and 410 -2 have a second set of characteristic dimensions that …
FIG. 9 have a first set of characteristic dimensions and the bottom graphene layer 410 -1 and 410 -2 have a second set of characteristic dimensions that …
FIG. 10 A, leads 402 -1, 404 -2 and 402 -3 are electrically connect to a common bus while leads 404 -1, 402 -2 and 404 -3 are electrically connected to another …
FIG. 11 illustrates yet another exemplary electrically-connected graphene device topography in accordance with an embodiment of the present disclosure. [0030]
FIGS. 12A-12B illustrate still another exemplary electrically-connected graphene device topography in accordance with an embodiment of the present disclosure. …
substrate
dielectric material or semiconducting material
glass
silicon dioxide
SiO₂
neoceram
sapphire
silicon
Si
silicon carbide
SiC
germanium
Ge
boron nitride
BN
molybdenum sulfide
MoS
soda lime glass
graphene generation material
dielectric insulating layer material
FIG. 9 have a first set of characteristic dimensions and the bottom graphene layer 410 -1 and 410 -2 have a second set of characteristic dimensions that …
FIG. 9 have a first set of characteristic dimensions and the bottom graphene layer 410 -1 and 410 -2 have a second set of characteristic dimensions that …
FIG. 10 A, leads 402 -1, 404 -2 and 402 -3 are electrically connect to a common bus while leads 404 -1, 402 -2 and 404 -3 are electrically connected to another …
FIG. 11 illustrates yet another exemplary electrically-connected graphene device topography in accordance with an embodiment of the present disclosure. [0030]
FIGS. 12A-12B illustrate still another exemplary electrically-connected graphene device topography in accordance with an embodiment of the present disclosure. …