Patent
US 10,868,222METHOD OF MANUFACTURING GALLIUM NITRIDE QUANTUM DOTS
Kiseok CHANG
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,868,222Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart for explaining a method of manufacturing gallium nitride quantum dots, according to an embodiment of the present disclosure. [0025]
FIG. 2 is a schematic diagram illustrating a process of synthesizing gallium nitride quantum dots, according to an embodiment of the present disclosure. [0026]
FIG. 3A is an UV-visible absorption spectrum of gallium nitride quantum dots synthesized with varied growth temperature and time, according to an embodiment of …
FIG. 4B is a transmission electron microscope (TEM) photograph of gallium nitride quantum dots synthesized according to an embodiment of the present …
FIG. 5B is an XPS spectrum with respect to a Ga 2P 3/2 SVG 16661938.10-23-2019.K₂₃Y₈₃Q₉RXEAPX4.SPEC.9.8.2141.1068.2154.1088.svg 0.067 0.043 Chemistry Black and …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing gallium nitride quantum dots comprising: preparing a gallium precursor solution by heating a mixture prepared by dissolving a gallium halide and an organic ligand in a solvent; heating the gallium precursor solution to obtain a heated gallium precursor solution; hot-injecting a nitrogen precursor into the heated gallium precursor solution to produce gallium nitride; growing the gallium nitride while maintaining a heating temperature, thereby producing a growth-completed gallium nitride; and cooling a solution including the growth-completed gallium nitride to produce gallium nitride quantum dots in a colloid state.
The method of claim 1, wherein the gallium nitride quantum dots in the colloid state are manufactured by an one- pot process.
The method of claim 1, wherein the gallium halide includes one or more selected from gallium chloride and gallium fluoride.
The method of claim 1, wherein the organic ligand includes one or more selected from stearic acid, oleic acid, palmitic acid, linolenic acid, myristic acid, lauric acid, octadecylamine, oleylamine, n-octylamine, hexadecylamine, dodecylamine, triocty l phosphine oxide, and trihexy l phosphine oxide.
The method of claim 1, wherein the preparing the gallium precursor solution is performed at a temperature in a range of 80 ° C to 120 ° C with a duration in a range of 1 to 3 hours.
The method of claim 1, further comprising deaerating the gallium precursor solution between the preparing the gallium precursor solution and the heating the gallium precursor solution.
The method of claim 1, wherein heating the gallium precursor solution comprises maintaining the heating temperature after heating the gallium precursor solution to a temperature in a range of 200 ° C to 280 °C.
The method of claim 1, wherein the nitrogen precursor is a compound represented by a chemical formula of M [N (SiRR 2 R 3) 2], wherein M is selected from Group 1 elements, and R ', R 2 and R 3 are each independently selected from C 1 to C 3 alkyl groups.
The method of claim 1, wherein the hot-injecting the nitrogen precursor into the heated allium precursor solution to produce the gallium nitride comprises hot- injecting the nitrogen precursor at a temperature in a range of 200 ° C to 280 ° C in an inert gas atmosphere.
The method of claim 1, wherein the growing temperature in a range of 200 ° C to 280 ° C for a an inert gas atmosphere.
The method of claim 1, wherein, a molar ratio precursor is 1. 2 to 1: 4 to produce the gallium
The method of claim 1, wherein the growing emission wavelength band of the gallium nitride reaction time, or both thereof. the gallium nitride is performed at a duration in a range of 10 minutes to 3 hours in of the gallium precursor to the nitrogen nitride. the gallium nitride comprises adjusting a light quantum dots by adjusting reaction temperature,
Materials described outside the worked examples.
gallium nitride quantum dots
GaN
gallium halide
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3A is an UV-visible absorption spectrum of gallium nitride quantum dots synthesized with varied growth temperature and time, according to an embodiment of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 250–280 °C | — |
Temperature |
Table 1
s and method as in Example 1 except with varying growth temperature and growth time as shown in the following Table 1.
p. 10
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,868,222Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart for explaining a method of manufacturing gallium nitride quantum dots, according to an embodiment of the present disclosure. [0025]
FIG. 2 is a schematic diagram illustrating a process of synthesizing gallium nitride quantum dots, according to an embodiment of the present disclosure. [0026]
FIG. 3A is an UV-visible absorption spectrum of gallium nitride quantum dots synthesized with varied growth temperature and time, according to an embodiment of …
FIG. 4B is a transmission electron microscope (TEM) photograph of gallium nitride quantum dots synthesized according to an embodiment of the present …
FIG. 5B is an XPS spectrum with respect to a Ga 2P 3/2 SVG 16661938.10-23-2019.K₂₃Y₈₃Q₉RXEAPX4.SPEC.9.8.2141.1068.2154.1088.svg 0.067 0.043 Chemistry Black and …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing gallium nitride quantum dots comprising: preparing a gallium precursor solution by heating a mixture prepared by dissolving a gallium halide and an organic ligand in a solvent; heating the gallium precursor solution to obtain a heated gallium precursor solution; hot-injecting a nitrogen precursor into the heated gallium precursor solution to produce gallium nitride; growing the gallium nitride while maintaining a heating temperature, thereby producing a growth-completed gallium nitride; and cooling a solution including the growth-completed gallium nitride to produce gallium nitride quantum dots in a colloid state.
The method of claim 1, wherein the gallium nitride quantum dots in the colloid state are manufactured by an one- pot process.
The method of claim 1, wherein the gallium halide includes one or more selected from gallium chloride and gallium fluoride.
The method of claim 1, wherein the organic ligand includes one or more selected from stearic acid, oleic acid, palmitic acid, linolenic acid, myristic acid, lauric acid, octadecylamine, oleylamine, n-octylamine, hexadecylamine, dodecylamine, triocty l phosphine oxide, and trihexy l phosphine oxide.
The method of claim 1, wherein the preparing the gallium precursor solution is performed at a temperature in a range of 80 ° C to 120 ° C with a duration in a range of 1 to 3 hours.
The method of claim 1, further comprising deaerating the gallium precursor solution between the preparing the gallium precursor solution and the heating the gallium precursor solution.
The method of claim 1, wherein heating the gallium precursor solution comprises maintaining the heating temperature after heating the gallium precursor solution to a temperature in a range of 200 ° C to 280 °C.
The method of claim 1, wherein the nitrogen precursor is a compound represented by a chemical formula of M [N (SiRR 2 R 3) 2], wherein M is selected from Group 1 elements, and R ', R 2 and R 3 are each independently selected from C 1 to C 3 alkyl groups.
The method of claim 1, wherein the hot-injecting the nitrogen precursor into the heated allium precursor solution to produce the gallium nitride comprises hot- injecting the nitrogen precursor at a temperature in a range of 200 ° C to 280 ° C in an inert gas atmosphere.
The method of claim 1, wherein the growing temperature in a range of 200 ° C to 280 ° C for a an inert gas atmosphere.
The method of claim 1, wherein, a molar ratio precursor is 1. 2 to 1: 4 to produce the gallium
The method of claim 1, wherein the growing emission wavelength band of the gallium nitride reaction time, or both thereof. the gallium nitride is performed at a duration in a range of 10 minutes to 3 hours in of the gallium precursor to the nitrogen nitride. the gallium nitride comprises adjusting a light quantum dots by adjusting reaction temperature,
Materials described outside the worked examples.
gallium nitride quantum dots
GaN
gallium halide
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3A is an UV-visible absorption spectrum of gallium nitride quantum dots synthesized with varied growth temperature and time, according to an embodiment of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 250–280 °C | — |
Temperature |
Table 1
s and method as in Example 1 except with varying growth temperature and growth time as shown in the following Table 1.
p. 10
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,868,222Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart for explaining a method of manufacturing gallium nitride quantum dots, according to an embodiment of the present disclosure. [0025]
FIG. 2 is a schematic diagram illustrating a process of synthesizing gallium nitride quantum dots, according to an embodiment of the present disclosure. [0026]
FIG. 3A is an UV-visible absorption spectrum of gallium nitride quantum dots synthesized with varied growth temperature and time, according to an embodiment of …
FIG. 4B is a transmission electron microscope (TEM) photograph of gallium nitride quantum dots synthesized according to an embodiment of the present …
FIG. 5B is an XPS spectrum with respect to a Ga 2P 3/2 SVG 16661938.10-23-2019.K₂₃Y₈₃Q₉RXEAPX4.SPEC.9.8.2141.1068.2154.1088.svg 0.067 0.043 Chemistry Black and …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing gallium nitride quantum dots comprising: preparing a gallium precursor solution by heating a mixture prepared by dissolving a gallium halide and an organic ligand in a solvent; heating the gallium precursor solution to obtain a heated gallium precursor solution; hot-injecting a nitrogen precursor into the heated gallium precursor solution to produce gallium nitride; growing the gallium nitride while maintaining a heating temperature, thereby producing a growth-completed gallium nitride; and cooling a solution including the growth-completed gallium nitride to produce gallium nitride quantum dots in a colloid state.
The method of claim 1, wherein the gallium nitride quantum dots in the colloid state are manufactured by an one- pot process.
The method of claim 1, wherein the gallium halide includes one or more selected from gallium chloride and gallium fluoride.
The method of claim 1, wherein the organic ligand includes one or more selected from stearic acid, oleic acid, palmitic acid, linolenic acid, myristic acid, lauric acid, octadecylamine, oleylamine, n-octylamine, hexadecylamine, dodecylamine, triocty l phosphine oxide, and trihexy l phosphine oxide.
The method of claim 1, wherein the preparing the gallium precursor solution is performed at a temperature in a range of 80 ° C to 120 ° C with a duration in a range of 1 to 3 hours.
The method of claim 1, further comprising deaerating the gallium precursor solution between the preparing the gallium precursor solution and the heating the gallium precursor solution.
The method of claim 1, wherein heating the gallium precursor solution comprises maintaining the heating temperature after heating the gallium precursor solution to a temperature in a range of 200 ° C to 280 °C.
The method of claim 1, wherein the nitrogen precursor is a compound represented by a chemical formula of M [N (SiRR 2 R 3) 2], wherein M is selected from Group 1 elements, and R ', R 2 and R 3 are each independently selected from C 1 to C 3 alkyl groups.
The method of claim 1, wherein the hot-injecting the nitrogen precursor into the heated allium precursor solution to produce the gallium nitride comprises hot- injecting the nitrogen precursor at a temperature in a range of 200 ° C to 280 ° C in an inert gas atmosphere.
The method of claim 1, wherein the growing temperature in a range of 200 ° C to 280 ° C for a an inert gas atmosphere.
The method of claim 1, wherein, a molar ratio precursor is 1. 2 to 1: 4 to produce the gallium
The method of claim 1, wherein the growing emission wavelength band of the gallium nitride reaction time, or both thereof. the gallium nitride is performed at a duration in a range of 10 minutes to 3 hours in of the gallium precursor to the nitrogen nitride. the gallium nitride comprises adjusting a light quantum dots by adjusting reaction temperature,
Materials described outside the worked examples.
gallium nitride quantum dots
GaN
gallium halide
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3A is an UV-visible absorption spectrum of gallium nitride quantum dots synthesized with varied growth temperature and time, according to an embodiment of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 250–280 °C | — |
Temperature |
Table 1
s and method as in Example 1 except with varying growth temperature and growth time as shown in the following Table 1.
p. 10
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,868,222Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart for explaining a method of manufacturing gallium nitride quantum dots, according to an embodiment of the present disclosure. [0025]
FIG. 2 is a schematic diagram illustrating a process of synthesizing gallium nitride quantum dots, according to an embodiment of the present disclosure. [0026]
FIG. 3A is an UV-visible absorption spectrum of gallium nitride quantum dots synthesized with varied growth temperature and time, according to an embodiment of …
FIG. 4B is a transmission electron microscope (TEM) photograph of gallium nitride quantum dots synthesized according to an embodiment of the present …
FIG. 5B is an XPS spectrum with respect to a Ga 2P 3/2 SVG 16661938.10-23-2019.K₂₃Y₈₃Q₉RXEAPX4.SPEC.9.8.2141.1068.2154.1088.svg 0.067 0.043 Chemistry Black and …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing gallium nitride quantum dots comprising: preparing a gallium precursor solution by heating a mixture prepared by dissolving a gallium halide and an organic ligand in a solvent; heating the gallium precursor solution to obtain a heated gallium precursor solution; hot-injecting a nitrogen precursor into the heated gallium precursor solution to produce gallium nitride; growing the gallium nitride while maintaining a heating temperature, thereby producing a growth-completed gallium nitride; and cooling a solution including the growth-completed gallium nitride to produce gallium nitride quantum dots in a colloid state.
The method of claim 1, wherein the gallium nitride quantum dots in the colloid state are manufactured by an one- pot process.
The method of claim 1, wherein the gallium halide includes one or more selected from gallium chloride and gallium fluoride.
The method of claim 1, wherein the organic ligand includes one or more selected from stearic acid, oleic acid, palmitic acid, linolenic acid, myristic acid, lauric acid, octadecylamine, oleylamine, n-octylamine, hexadecylamine, dodecylamine, triocty l phosphine oxide, and trihexy l phosphine oxide.
The method of claim 1, wherein the preparing the gallium precursor solution is performed at a temperature in a range of 80 ° C to 120 ° C with a duration in a range of 1 to 3 hours.
The method of claim 1, further comprising deaerating the gallium precursor solution between the preparing the gallium precursor solution and the heating the gallium precursor solution.
The method of claim 1, wherein heating the gallium precursor solution comprises maintaining the heating temperature after heating the gallium precursor solution to a temperature in a range of 200 ° C to 280 °C.
The method of claim 1, wherein the nitrogen precursor is a compound represented by a chemical formula of M [N (SiRR 2 R 3) 2], wherein M is selected from Group 1 elements, and R ', R 2 and R 3 are each independently selected from C 1 to C 3 alkyl groups.
The method of claim 1, wherein the hot-injecting the nitrogen precursor into the heated allium precursor solution to produce the gallium nitride comprises hot- injecting the nitrogen precursor at a temperature in a range of 200 ° C to 280 ° C in an inert gas atmosphere.
The method of claim 1, wherein the growing temperature in a range of 200 ° C to 280 ° C for a an inert gas atmosphere.
The method of claim 1, wherein, a molar ratio precursor is 1. 2 to 1: 4 to produce the gallium
The method of claim 1, wherein the growing emission wavelength band of the gallium nitride reaction time, or both thereof. the gallium nitride is performed at a duration in a range of 10 minutes to 3 hours in of the gallium precursor to the nitrogen nitride. the gallium nitride comprises adjusting a light quantum dots by adjusting reaction temperature,
Materials described outside the worked examples.
gallium nitride quantum dots
GaN
gallium halide
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3A is an UV-visible absorption spectrum of gallium nitride quantum dots synthesized with varied growth temperature and time, according to an embodiment of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 250–280 °C | — |
Temperature |
Table 1
s and method as in Example 1 except with varying growth temperature and growth time as shown in the following Table 1.
p. 10
Related documents with shared materials, methods, properties, or citations.
organic ligand
nitrogen precursor
M[N(SiR₁R₂R₃)2]
gallium chloride
GaCl₃
gallium fluoride
GaF₃
FIG. 3A is an UV-visible absorption spectrum of gallium nitride quantum dots synthesized with varied growth temperature and time, according to an embodiment of …
FIG. 4B is a transmission electron microscope (TEM) photograph of gallium nitride quantum dots synthesized according to an embodiment of the present …
FIG. 4B is a transmission electron microscope (TEM) photograph of gallium nitride quantum dots synthesized according to an embodiment of the present …
FIG. 5B is an XPS spectrum with respect to a Ga 2P 3/2 SVG 16661938.10-23-2019.K₂₃Y₈₃Q₉RXEAPX4.SPEC.9.8.2141.1068.2154.1088.svg 0.067 0.043 Chemistry Black and …
| — |
Duration | 10–180 minutes | — |
Thickness | 310–360 nm | — |
Temperature | 80–120 °C | — |
Duration | 600–10800 s | — |
Duration | 1–3 hours | — |
Temperature | 90–100 °C | — |
Duration | 300–14400 s | — |
Duration | 2–3 hours | — |
Temperature | ≤ 200 °C | — |
Duration | ≤ 5 minutes | — |
Temperature | ≥ 280 °C | — |
Duration | ≥ 4 hours | — |
organic ligand
nitrogen precursor
M[N(SiR₁R₂R₃)2]
gallium chloride
GaCl₃
gallium fluoride
GaF₃
FIG. 3A is an UV-visible absorption spectrum of gallium nitride quantum dots synthesized with varied growth temperature and time, according to an embodiment of …
FIG. 4B is a transmission electron microscope (TEM) photograph of gallium nitride quantum dots synthesized according to an embodiment of the present …
FIG. 4B is a transmission electron microscope (TEM) photograph of gallium nitride quantum dots synthesized according to an embodiment of the present …
FIG. 5B is an XPS spectrum with respect to a Ga 2P 3/2 SVG 16661938.10-23-2019.K₂₃Y₈₃Q₉RXEAPX4.SPEC.9.8.2141.1068.2154.1088.svg 0.067 0.043 Chemistry Black and …
| — |
Duration | 10–180 minutes | — |
Thickness | 310–360 nm | — |
Temperature | 80–120 °C | — |
Duration | 600–10800 s | — |
Duration | 1–3 hours | — |
Temperature | 90–100 °C | — |
Duration | 300–14400 s | — |
Duration | 2–3 hours | — |
Temperature | ≤ 200 °C | — |
Duration | ≤ 5 minutes | — |
Temperature | ≥ 280 °C | — |
Duration | ≥ 4 hours | — |
organic ligand
nitrogen precursor
M[N(SiR₁R₂R₃)2]
gallium chloride
GaCl₃
gallium fluoride
GaF₃
FIG. 3A is an UV-visible absorption spectrum of gallium nitride quantum dots synthesized with varied growth temperature and time, according to an embodiment of …
FIG. 4B is a transmission electron microscope (TEM) photograph of gallium nitride quantum dots synthesized according to an embodiment of the present …
FIG. 4B is a transmission electron microscope (TEM) photograph of gallium nitride quantum dots synthesized according to an embodiment of the present …
FIG. 5B is an XPS spectrum with respect to a Ga 2P 3/2 SVG 16661938.10-23-2019.K₂₃Y₈₃Q₉RXEAPX4.SPEC.9.8.2141.1068.2154.1088.svg 0.067 0.043 Chemistry Black and …
| — |
Duration | 10–180 minutes | — |
Thickness | 310–360 nm | — |
Temperature | 80–120 °C | — |
Duration | 600–10800 s | — |
Duration | 1–3 hours | — |
Temperature | 90–100 °C | — |
Duration | 300–14400 s | — |
Duration | 2–3 hours | — |
Temperature | ≤ 200 °C | — |
Duration | ≤ 5 minutes | — |
Temperature | ≥ 280 °C | — |
Duration | ≥ 4 hours | — |
organic ligand
nitrogen precursor
M[N(SiR₁R₂R₃)2]
gallium chloride
GaCl₃
gallium fluoride
GaF₃
FIG. 3A is an UV-visible absorption spectrum of gallium nitride quantum dots synthesized with varied growth temperature and time, according to an embodiment of …
FIG. 4B is a transmission electron microscope (TEM) photograph of gallium nitride quantum dots synthesized according to an embodiment of the present …
FIG. 4B is a transmission electron microscope (TEM) photograph of gallium nitride quantum dots synthesized according to an embodiment of the present …
FIG. 5B is an XPS spectrum with respect to a Ga 2P 3/2 SVG 16661938.10-23-2019.K₂₃Y₈₃Q₉RXEAPX4.SPEC.9.8.2141.1068.2154.1088.svg 0.067 0.043 Chemistry Black and …
| — |
Duration | 10–180 minutes | — |
Thickness | 310–360 nm | — |
Temperature | 80–120 °C | — |
Duration | 600–10800 s | — |
Duration | 1–3 hours | — |
Temperature | 90–100 °C | — |
Duration | 300–14400 s | — |
Duration | 2–3 hours | — |
Temperature | ≤ 200 °C | — |
Duration | ≤ 5 minutes | — |
Temperature | ≥ 280 °C | — |
Duration | ≥ 4 hours | — |