Patent
US 9,755,093PHOTOELECTRONIC DEVICE USING HYBRID STRUCTURE OF SILICA NANOPARTICLES-GRAPHENE QUANTUM DOTS AND METHOD OF MANUFACTURING THE SAME
Suk Ho CHOI
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,755,093Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a photoelectronic device according to an example of the present disclosure;
FIGS. 2 and 3 illustrate an energy transfer mechanism according to an example of the present disclosure;
FIGS. 4 to 9 illustrate a method of manufacturing a photoelectronic device according to an example of the present disclosure;
FIG. 5 illustrates a method of manufacturing the hybrid structure of the silica nanoparticles-graphene quantum dots according to an example of the present …
FIG. 6B. Meanwhile, the silica nanoparticles (SNPs) may be surface-treated before being combined with the graphene quantum dots (GQDs). This surface treatment …
FIG. 7A shows TEM images of the silica nanoparticles, the graphene quantum dots, and the hybrid structure of the silica nanoparticles-graphene quantum dots.
FIG. 8, an energy conversion layer 230 having the hybrid structure of silica nanoparticles (SNPs)-graphene quantum dots (GQDs) manufactured by the process …
FIG. 10 illustrates electron energy loss spectra of silica nanoparticles (SNPs), graphene quantum dots (GQDs), and a hybrid structure of silica nanoparticles …
FIG. 11 illustrates optical absorption spectra of photoelectronic devices according to Comparative Examples 1 and 2 and a photoelectronic device including a …
FIGS. 12 and 13 are photoluminescence (PL) and photoluminescence peak shift graphs of photoelectronic devices according to Comparative Examples 1 and 2 and a …
FIG. 13 illustrates excitation light-photoluminescence peaks of the photoelectronic device according to each of Comparative Example 2 and the example. In the …
FIGS. 14A and 14B are photoluminescence (PL) lifespan graphs of photoelectronic devices according to Comparative Examples 1 and 2 and a photoelectronic device …
FIG. 15 illustrates voltage-dark current curves of photoelectronic devices according to Comparative Examples 1 and 2 and a photoelectronic device including a …
FIGS. 16A to 16C illustrate voltage-current curves dependent upon incident light of photoelectronic devices according to Comparative Examples 1 and 2 and a …
FIGS. 17A and 17B illustrate graphs of light responsivity dependent upon voltage of photoelectronic devices according to Comparative Examples 1 and 2 and a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A photoelectronic device, comprising: an energy conversion layer having a hybrid structure that comprises graphene quantum dots (GODs GQDs) bonded to surfaces of silica nanoparticles (SNPs); and electrodes formed on an upper and lower parts of the energy conversion layer.
The photoelectronic device according to claim 1, wherein the silica nanoparticles have spherical shapes, and the graphene quantum dots have two-dimensional planar shapes and be are bonded to surfaces of the spherical shapes.
The photoelectronic device according to claim 1, wherein the silica nanoparticles are surface-treated to be bonded for bonding with the graphene quantum dots.
A method of manufacturing a photoelectronic device substrate, the method comprising: forming a first electrode on a substrate; 4 AMENDMENT IN RESPONSE TO EX PARTE QUAYLE ACTION Attorney Docket No.: Q₂₂₇₁₈₅ Appln. No.: 15/208,768 forming an energy conversion layer having a hybrid structure of silica nanoparticles (SNPs) and graphene quantum dots (GODs GQDs) bonded to surfaces of silica nanoparticles (SNPs) on the first electrode; and forming a second electrode on the energy conversion layer.
The method according to claim 4, wherein the forming of the energy conversion layer comprises: manufacturing the silica nanoparticles; manufacturing the graphene quantum dots; surface-treating the silica nanoparticles; and binding the graphene quantum dots to the surface-treated silica nanoparticles.
Layer stacks claimed or described, ordered top of device to substrate.
photoelectronic device
Materials described outside the worked examples.
silica nanoparticles
SiO₂
graphene quantum dots
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6B. Meanwhile, the silica nanoparticles (SNPs) may be surface-treated before being combined with the graphene quantum dots (GQDs). This surface treatment …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 15–800 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
GRAPHENE-BASED COMPOUND, PREPARATION METHOD THEREOF, AND SINGLE-PHASE COMPOSITION FOR PREPARING GRAPHENE-BASED COMPOUND AND GRAPHENE QUANTUM DOT
METHODS FOR SYNTHESIS OF GRAPHENE DERIVATIVES AND FUNCTIONAL MATERIALS FROM ASPHALTENES
Patent
Atlas literature
Patent
US 9,755,093Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a photoelectronic device according to an example of the present disclosure;
FIGS. 2 and 3 illustrate an energy transfer mechanism according to an example of the present disclosure;
FIGS. 4 to 9 illustrate a method of manufacturing a photoelectronic device according to an example of the present disclosure;
FIG. 5 illustrates a method of manufacturing the hybrid structure of the silica nanoparticles-graphene quantum dots according to an example of the present …
FIG. 6B. Meanwhile, the silica nanoparticles (SNPs) may be surface-treated before being combined with the graphene quantum dots (GQDs). This surface treatment …
FIG. 7A shows TEM images of the silica nanoparticles, the graphene quantum dots, and the hybrid structure of the silica nanoparticles-graphene quantum dots.
FIG. 8, an energy conversion layer 230 having the hybrid structure of silica nanoparticles (SNPs)-graphene quantum dots (GQDs) manufactured by the process …
FIG. 10 illustrates electron energy loss spectra of silica nanoparticles (SNPs), graphene quantum dots (GQDs), and a hybrid structure of silica nanoparticles …
FIG. 11 illustrates optical absorption spectra of photoelectronic devices according to Comparative Examples 1 and 2 and a photoelectronic device including a …
FIGS. 12 and 13 are photoluminescence (PL) and photoluminescence peak shift graphs of photoelectronic devices according to Comparative Examples 1 and 2 and a …
FIG. 13 illustrates excitation light-photoluminescence peaks of the photoelectronic device according to each of Comparative Example 2 and the example. In the …
FIGS. 14A and 14B are photoluminescence (PL) lifespan graphs of photoelectronic devices according to Comparative Examples 1 and 2 and a photoelectronic device …
FIG. 15 illustrates voltage-dark current curves of photoelectronic devices according to Comparative Examples 1 and 2 and a photoelectronic device including a …
FIGS. 16A to 16C illustrate voltage-current curves dependent upon incident light of photoelectronic devices according to Comparative Examples 1 and 2 and a …
FIGS. 17A and 17B illustrate graphs of light responsivity dependent upon voltage of photoelectronic devices according to Comparative Examples 1 and 2 and a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A photoelectronic device, comprising: an energy conversion layer having a hybrid structure that comprises graphene quantum dots (GODs GQDs) bonded to surfaces of silica nanoparticles (SNPs); and electrodes formed on an upper and lower parts of the energy conversion layer.
The photoelectronic device according to claim 1, wherein the silica nanoparticles have spherical shapes, and the graphene quantum dots have two-dimensional planar shapes and be are bonded to surfaces of the spherical shapes.
The photoelectronic device according to claim 1, wherein the silica nanoparticles are surface-treated to be bonded for bonding with the graphene quantum dots.
A method of manufacturing a photoelectronic device substrate, the method comprising: forming a first electrode on a substrate; 4 AMENDMENT IN RESPONSE TO EX PARTE QUAYLE ACTION Attorney Docket No.: Q₂₂₇₁₈₅ Appln. No.: 15/208,768 forming an energy conversion layer having a hybrid structure of silica nanoparticles (SNPs) and graphene quantum dots (GODs GQDs) bonded to surfaces of silica nanoparticles (SNPs) on the first electrode; and forming a second electrode on the energy conversion layer.
The method according to claim 4, wherein the forming of the energy conversion layer comprises: manufacturing the silica nanoparticles; manufacturing the graphene quantum dots; surface-treating the silica nanoparticles; and binding the graphene quantum dots to the surface-treated silica nanoparticles.
Layer stacks claimed or described, ordered top of device to substrate.
photoelectronic device
Materials described outside the worked examples.
silica nanoparticles
SiO₂
graphene quantum dots
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6B. Meanwhile, the silica nanoparticles (SNPs) may be surface-treated before being combined with the graphene quantum dots (GQDs). This surface treatment …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 15–800 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
GRAPHENE-BASED COMPOUND, PREPARATION METHOD THEREOF, AND SINGLE-PHASE COMPOSITION FOR PREPARING GRAPHENE-BASED COMPOUND AND GRAPHENE QUANTUM DOT
METHODS FOR SYNTHESIS OF GRAPHENE DERIVATIVES AND FUNCTIONAL MATERIALS FROM ASPHALTENES
Patent
Atlas literature
Patent
US 9,755,093Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a photoelectronic device according to an example of the present disclosure;
FIGS. 2 and 3 illustrate an energy transfer mechanism according to an example of the present disclosure;
FIGS. 4 to 9 illustrate a method of manufacturing a photoelectronic device according to an example of the present disclosure;
FIG. 5 illustrates a method of manufacturing the hybrid structure of the silica nanoparticles-graphene quantum dots according to an example of the present …
FIG. 6B. Meanwhile, the silica nanoparticles (SNPs) may be surface-treated before being combined with the graphene quantum dots (GQDs). This surface treatment …
FIG. 7A shows TEM images of the silica nanoparticles, the graphene quantum dots, and the hybrid structure of the silica nanoparticles-graphene quantum dots.
FIG. 8, an energy conversion layer 230 having the hybrid structure of silica nanoparticles (SNPs)-graphene quantum dots (GQDs) manufactured by the process …
FIG. 10 illustrates electron energy loss spectra of silica nanoparticles (SNPs), graphene quantum dots (GQDs), and a hybrid structure of silica nanoparticles …
FIG. 11 illustrates optical absorption spectra of photoelectronic devices according to Comparative Examples 1 and 2 and a photoelectronic device including a …
FIGS. 12 and 13 are photoluminescence (PL) and photoluminescence peak shift graphs of photoelectronic devices according to Comparative Examples 1 and 2 and a …
FIG. 13 illustrates excitation light-photoluminescence peaks of the photoelectronic device according to each of Comparative Example 2 and the example. In the …
FIGS. 14A and 14B are photoluminescence (PL) lifespan graphs of photoelectronic devices according to Comparative Examples 1 and 2 and a photoelectronic device …
FIG. 15 illustrates voltage-dark current curves of photoelectronic devices according to Comparative Examples 1 and 2 and a photoelectronic device including a …
FIGS. 16A to 16C illustrate voltage-current curves dependent upon incident light of photoelectronic devices according to Comparative Examples 1 and 2 and a …
FIGS. 17A and 17B illustrate graphs of light responsivity dependent upon voltage of photoelectronic devices according to Comparative Examples 1 and 2 and a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A photoelectronic device, comprising: an energy conversion layer having a hybrid structure that comprises graphene quantum dots (GODs GQDs) bonded to surfaces of silica nanoparticles (SNPs); and electrodes formed on an upper and lower parts of the energy conversion layer.
The photoelectronic device according to claim 1, wherein the silica nanoparticles have spherical shapes, and the graphene quantum dots have two-dimensional planar shapes and be are bonded to surfaces of the spherical shapes.
The photoelectronic device according to claim 1, wherein the silica nanoparticles are surface-treated to be bonded for bonding with the graphene quantum dots.
A method of manufacturing a photoelectronic device substrate, the method comprising: forming a first electrode on a substrate; 4 AMENDMENT IN RESPONSE TO EX PARTE QUAYLE ACTION Attorney Docket No.: Q₂₂₇₁₈₅ Appln. No.: 15/208,768 forming an energy conversion layer having a hybrid structure of silica nanoparticles (SNPs) and graphene quantum dots (GODs GQDs) bonded to surfaces of silica nanoparticles (SNPs) on the first electrode; and forming a second electrode on the energy conversion layer.
The method according to claim 4, wherein the forming of the energy conversion layer comprises: manufacturing the silica nanoparticles; manufacturing the graphene quantum dots; surface-treating the silica nanoparticles; and binding the graphene quantum dots to the surface-treated silica nanoparticles.
Layer stacks claimed or described, ordered top of device to substrate.
photoelectronic device
Materials described outside the worked examples.
silica nanoparticles
SiO₂
graphene quantum dots
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6B. Meanwhile, the silica nanoparticles (SNPs) may be surface-treated before being combined with the graphene quantum dots (GQDs). This surface treatment …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 15–800 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
GRAPHENE-BASED COMPOUND, PREPARATION METHOD THEREOF, AND SINGLE-PHASE COMPOSITION FOR PREPARING GRAPHENE-BASED COMPOUND AND GRAPHENE QUANTUM DOT
METHODS FOR SYNTHESIS OF GRAPHENE DERIVATIVES AND FUNCTIONAL MATERIALS FROM ASPHALTENES
Patent
Atlas literature
Patent
US 9,755,093Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a photoelectronic device according to an example of the present disclosure;
FIGS. 2 and 3 illustrate an energy transfer mechanism according to an example of the present disclosure;
FIGS. 4 to 9 illustrate a method of manufacturing a photoelectronic device according to an example of the present disclosure;
FIG. 5 illustrates a method of manufacturing the hybrid structure of the silica nanoparticles-graphene quantum dots according to an example of the present …
FIG. 6B. Meanwhile, the silica nanoparticles (SNPs) may be surface-treated before being combined with the graphene quantum dots (GQDs). This surface treatment …
FIG. 7A shows TEM images of the silica nanoparticles, the graphene quantum dots, and the hybrid structure of the silica nanoparticles-graphene quantum dots.
FIG. 8, an energy conversion layer 230 having the hybrid structure of silica nanoparticles (SNPs)-graphene quantum dots (GQDs) manufactured by the process …
FIG. 10 illustrates electron energy loss spectra of silica nanoparticles (SNPs), graphene quantum dots (GQDs), and a hybrid structure of silica nanoparticles …
FIG. 11 illustrates optical absorption spectra of photoelectronic devices according to Comparative Examples 1 and 2 and a photoelectronic device including a …
FIGS. 12 and 13 are photoluminescence (PL) and photoluminescence peak shift graphs of photoelectronic devices according to Comparative Examples 1 and 2 and a …
FIG. 13 illustrates excitation light-photoluminescence peaks of the photoelectronic device according to each of Comparative Example 2 and the example. In the …
FIGS. 14A and 14B are photoluminescence (PL) lifespan graphs of photoelectronic devices according to Comparative Examples 1 and 2 and a photoelectronic device …
FIG. 15 illustrates voltage-dark current curves of photoelectronic devices according to Comparative Examples 1 and 2 and a photoelectronic device including a …
FIGS. 16A to 16C illustrate voltage-current curves dependent upon incident light of photoelectronic devices according to Comparative Examples 1 and 2 and a …
FIGS. 17A and 17B illustrate graphs of light responsivity dependent upon voltage of photoelectronic devices according to Comparative Examples 1 and 2 and a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A photoelectronic device, comprising: an energy conversion layer having a hybrid structure that comprises graphene quantum dots (GODs GQDs) bonded to surfaces of silica nanoparticles (SNPs); and electrodes formed on an upper and lower parts of the energy conversion layer.
The photoelectronic device according to claim 1, wherein the silica nanoparticles have spherical shapes, and the graphene quantum dots have two-dimensional planar shapes and be are bonded to surfaces of the spherical shapes.
The photoelectronic device according to claim 1, wherein the silica nanoparticles are surface-treated to be bonded for bonding with the graphene quantum dots.
A method of manufacturing a photoelectronic device substrate, the method comprising: forming a first electrode on a substrate; 4 AMENDMENT IN RESPONSE TO EX PARTE QUAYLE ACTION Attorney Docket No.: Q₂₂₇₁₈₅ Appln. No.: 15/208,768 forming an energy conversion layer having a hybrid structure of silica nanoparticles (SNPs) and graphene quantum dots (GODs GQDs) bonded to surfaces of silica nanoparticles (SNPs) on the first electrode; and forming a second electrode on the energy conversion layer.
The method according to claim 4, wherein the forming of the energy conversion layer comprises: manufacturing the silica nanoparticles; manufacturing the graphene quantum dots; surface-treating the silica nanoparticles; and binding the graphene quantum dots to the surface-treated silica nanoparticles.
Layer stacks claimed or described, ordered top of device to substrate.
photoelectronic device
Materials described outside the worked examples.
silica nanoparticles
SiO₂
graphene quantum dots
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6B. Meanwhile, the silica nanoparticles (SNPs) may be surface-treated before being combined with the graphene quantum dots (GQDs). This surface treatment …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 15–800 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
GRAPHENE-BASED COMPOUND, PREPARATION METHOD THEREOF, AND SINGLE-PHASE COMPOSITION FOR PREPARING GRAPHENE-BASED COMPOUND AND GRAPHENE QUANTUM DOT
METHODS FOR SYNTHESIS OF GRAPHENE DERIVATIVES AND FUNCTIONAL MATERIALS FROM ASPHALTENES
NH₂ ligands
HCl solution
HCl
ammonium solution
graphene quantum dots-silica nanoparticles hybrid
graphene (first electrode)
FIG. 7A shows TEM images of the silica nanoparticles, the graphene quantum dots, and the hybrid structure of the silica nanoparticles-graphene quantum dots.
FIG. 11 illustrates optical absorption spectra of photoelectronic devices according to Comparative Examples 1 and 2 and a photoelectronic device including a …
FIGS. 12 and 13 are photoluminescence (PL) and photoluminescence peak shift graphs of photoelectronic devices according to Comparative Examples 1 and 2 and a …
FIG. 13 illustrates excitation light-photoluminescence peaks of the photoelectronic device according to each of Comparative Example 2 and the example. In the …
FIGS. 14A and 14B are photoluminescence (PL) lifespan graphs of photoelectronic devices according to Comparative Examples 1 and 2 and a photoelectronic device …
| — |
Thickness | 350–700 nm | — |
Thickness | 370–600 nm | — |
Thickness | 300–480 nm | — |
Thickness | 421–551 nm | — |
Thickness | 300–400 nm | — |
Thickness | 400–480 nm | — |
Thickness | ≤ 400 nm | — |
Voltage | ≤ 0 V | — |
Thickness | ≥ 400 nm | — |
Voltage | ≥ 0 V | — |
NH₂ ligands
HCl solution
HCl
ammonium solution
graphene quantum dots-silica nanoparticles hybrid
graphene (first electrode)
FIG. 7A shows TEM images of the silica nanoparticles, the graphene quantum dots, and the hybrid structure of the silica nanoparticles-graphene quantum dots.
FIG. 11 illustrates optical absorption spectra of photoelectronic devices according to Comparative Examples 1 and 2 and a photoelectronic device including a …
FIGS. 12 and 13 are photoluminescence (PL) and photoluminescence peak shift graphs of photoelectronic devices according to Comparative Examples 1 and 2 and a …
FIG. 13 illustrates excitation light-photoluminescence peaks of the photoelectronic device according to each of Comparative Example 2 and the example. In the …
FIGS. 14A and 14B are photoluminescence (PL) lifespan graphs of photoelectronic devices according to Comparative Examples 1 and 2 and a photoelectronic device …
| — |
Thickness | 350–700 nm | — |
Thickness | 370–600 nm | — |
Thickness | 300–480 nm | — |
Thickness | 421–551 nm | — |
Thickness | 300–400 nm | — |
Thickness | 400–480 nm | — |
Thickness | ≤ 400 nm | — |
Voltage | ≤ 0 V | — |
Thickness | ≥ 400 nm | — |
Voltage | ≥ 0 V | — |
NH₂ ligands
HCl solution
HCl
ammonium solution
graphene quantum dots-silica nanoparticles hybrid
graphene (first electrode)
FIG. 7A shows TEM images of the silica nanoparticles, the graphene quantum dots, and the hybrid structure of the silica nanoparticles-graphene quantum dots.
FIG. 11 illustrates optical absorption spectra of photoelectronic devices according to Comparative Examples 1 and 2 and a photoelectronic device including a …
FIGS. 12 and 13 are photoluminescence (PL) and photoluminescence peak shift graphs of photoelectronic devices according to Comparative Examples 1 and 2 and a …
FIG. 13 illustrates excitation light-photoluminescence peaks of the photoelectronic device according to each of Comparative Example 2 and the example. In the …
FIGS. 14A and 14B are photoluminescence (PL) lifespan graphs of photoelectronic devices according to Comparative Examples 1 and 2 and a photoelectronic device …
| — |
Thickness | 350–700 nm | — |
Thickness | 370–600 nm | — |
Thickness | 300–480 nm | — |
Thickness | 421–551 nm | — |
Thickness | 300–400 nm | — |
Thickness | 400–480 nm | — |
Thickness | ≤ 400 nm | — |
Voltage | ≤ 0 V | — |
Thickness | ≥ 400 nm | — |
Voltage | ≥ 0 V | — |
NH₂ ligands
HCl solution
HCl
ammonium solution
graphene quantum dots-silica nanoparticles hybrid
graphene (first electrode)
FIG. 7A shows TEM images of the silica nanoparticles, the graphene quantum dots, and the hybrid structure of the silica nanoparticles-graphene quantum dots.
FIG. 11 illustrates optical absorption spectra of photoelectronic devices according to Comparative Examples 1 and 2 and a photoelectronic device including a …
FIGS. 12 and 13 are photoluminescence (PL) and photoluminescence peak shift graphs of photoelectronic devices according to Comparative Examples 1 and 2 and a …
FIG. 13 illustrates excitation light-photoluminescence peaks of the photoelectronic device according to each of Comparative Example 2 and the example. In the …
FIGS. 14A and 14B are photoluminescence (PL) lifespan graphs of photoelectronic devices according to Comparative Examples 1 and 2 and a photoelectronic device …
| — |
Thickness | 350–700 nm | — |
Thickness | 370–600 nm | — |
Thickness | 300–480 nm | — |
Thickness | 421–551 nm | — |
Thickness | 300–400 nm | — |
Thickness | 400–480 nm | — |
Thickness | ≤ 400 nm | — |
Voltage | ≤ 0 V | — |
Thickness | ≥ 400 nm | — |
Voltage | ≥ 0 V | — |