Research paper
Experimental GrowthExperimental CharacterizationComputational AimdComputational DFTEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations5 characterizations5 properties6 figures
2 preparations2 characterizations1 property3 figures
2 preparations2 characterizations1 property3 figures
2 preparations2 characterizations1 property3 figures
2 preparations2 characterizations1 property3 figures
2 preparations2 characterizations1 property3 figures
2 preparations1 characterization1 property2 figures
2 preparations2 characterizations3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Xrd Crystallite Size | Scherrer size | 6.1nm | — | |||
| Xrd Crystallite Size | Scherrer size | 6.8nm | — | |||
| Xrd Crystallite Size | Scherrer size | 16.8nm | — | |||
| Xrd Crystallite Size | Scherrer size | —nm | — | |||
| Xrd Crystallite Size | Scherrer size | —nm | — | |||
| Xrd Crystallite Size | Scherrer size | —nm | — | |||
| Yield | reaction yield | 75% | — | |||
| Stability Time | oxidation resistance at 150 C in air | 24h | Colloidal GaN nanocrystals synthesized in molten halide saltColloidal VN nanocrystals synthesized in molten halide saltsColloidal TiN nanocrystals synthesized in molten halide saltColloidal NbN nanocrystals synthesized in molten halide saltColloidal Mo₂N nanocrystals synthesized in molten halide salColloidal Ta₃N₅ nanocrystals synthesized in molten halide saColloidal W₂N nanocrystals synthesized in molten halide salt | — | ||
| Formation Enthalpy | standard enthalpy of formation | -265.8kJ/mol | — | — | ||
| Formation Enthalpy | standard enthalpy of formation | -88.7kJ/mol | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Mobility of single vacancies and adatoms in graphene at room temperature
Epitaxial Growth of Cubic and Hexagonal InN Films and Their Alloys with AlN and GaN
Bias sputtering of granular L10-FePt films with hexagonal boron nitride grain boundaries
Method of Manufacturing Gallium Nitride Quantum Dots
Rapid Reduction of Nitrophenols Using Reusable Magnetic h-BN/Ni-NiO Nanocomposites
Anisotropic transverse magnetoresistance temperature dependence in Mn3Ga Weyl semimetal with chiral anomaly
Kinematical and dynamical contrast of dislocations in thick GaN substrates observed by synchrotron-radiation X-ray topography under six-beam diffraction conditions
Discovery of Graphene Sheets and C-Rich Micro-Oval structure in Stingless Bee Hive; Leading to an Emergent Material with Debut of Blue Emission
Comprehensive determination of Burgers vectors of threading dislocations in GaN substrates by combining reflection and transmission synchrotron-radiation x-ray topography
LAYERED GaN AND GaN NANOSHEET, AND ELECTRICAL DEVICE USING THE SAME
LAYERED GaAs, METHOD OF PREPARING SAME, AND GaAs NANOSHEET EXFOLIATED FROM SAME
Water Aging Effects on Graphene Nanoplatelets and Multi-walled Carbon Nanotube Reinforced Epoxy Glass Fiber Nanocomposites
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations5 characterizations5 properties6 figures
2 preparations2 characterizations1 property3 figures
2 preparations2 characterizations1 property3 figures
2 preparations2 characterizations1 property3 figures
2 preparations2 characterizations1 property3 figures
2 preparations2 characterizations1 property3 figures
2 preparations1 characterization1 property2 figures
2 preparations2 characterizations3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Xrd Crystallite Size | Scherrer size | 6.1nm | — | |||
| Xrd Crystallite Size | Scherrer size | 6.8nm | — | |||
| Xrd Crystallite Size | Scherrer size | 16.8nm | — | |||
| Xrd Crystallite Size | Scherrer size | —nm | — | |||
| Xrd Crystallite Size | Scherrer size | —nm | — | |||
| Xrd Crystallite Size | Scherrer size | —nm | — | |||
| Yield | reaction yield | 75% | — | |||
| Stability Time | oxidation resistance at 150 C in air | 24h | Colloidal GaN nanocrystals synthesized in molten halide saltColloidal VN nanocrystals synthesized in molten halide saltsColloidal TiN nanocrystals synthesized in molten halide saltColloidal NbN nanocrystals synthesized in molten halide saltColloidal Mo₂N nanocrystals synthesized in molten halide salColloidal Ta₃N₅ nanocrystals synthesized in molten halide saColloidal W₂N nanocrystals synthesized in molten halide salt | — | ||
| Formation Enthalpy | standard enthalpy of formation | -265.8kJ/mol | — | — | ||
| Formation Enthalpy | standard enthalpy of formation | -88.7kJ/mol | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Mobility of single vacancies and adatoms in graphene at room temperature
Epitaxial Growth of Cubic and Hexagonal InN Films and Their Alloys with AlN and GaN
Bias sputtering of granular L10-FePt films with hexagonal boron nitride grain boundaries
Method of Manufacturing Gallium Nitride Quantum Dots
Rapid Reduction of Nitrophenols Using Reusable Magnetic h-BN/Ni-NiO Nanocomposites
Anisotropic transverse magnetoresistance temperature dependence in Mn3Ga Weyl semimetal with chiral anomaly
Kinematical and dynamical contrast of dislocations in thick GaN substrates observed by synchrotron-radiation X-ray topography under six-beam diffraction conditions
Discovery of Graphene Sheets and C-Rich Micro-Oval structure in Stingless Bee Hive; Leading to an Emergent Material with Debut of Blue Emission
Comprehensive determination of Burgers vectors of threading dislocations in GaN substrates by combining reflection and transmission synchrotron-radiation x-ray topography
LAYERED GaN AND GaN NANOSHEET, AND ELECTRICAL DEVICE USING THE SAME
LAYERED GaAs, METHOD OF PREPARING SAME, AND GaAs NANOSHEET EXFOLIATED FROM SAME
Water Aging Effects on Graphene Nanoplatelets and Multi-walled Carbon Nanotube Reinforced Epoxy Glass Fiber Nanocomposites
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations5 characterizations5 properties6 figures
2 preparations2 characterizations1 property3 figures
2 preparations2 characterizations1 property3 figures
2 preparations2 characterizations1 property3 figures
2 preparations2 characterizations1 property3 figures
2 preparations2 characterizations1 property3 figures
2 preparations1 characterization1 property2 figures
2 preparations2 characterizations3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Xrd Crystallite Size | Scherrer size | 6.1nm | — | |||
| Xrd Crystallite Size | Scherrer size | 6.8nm | — | |||
| Xrd Crystallite Size | Scherrer size | 16.8nm | — | |||
| Xrd Crystallite Size | Scherrer size | —nm | — | |||
| Xrd Crystallite Size | Scherrer size | —nm | — | |||
| Xrd Crystallite Size | Scherrer size | —nm | — | |||
| Yield | reaction yield | 75% | — | |||
| Stability Time | oxidation resistance at 150 C in air | 24h | Colloidal GaN nanocrystals synthesized in molten halide saltColloidal VN nanocrystals synthesized in molten halide saltsColloidal TiN nanocrystals synthesized in molten halide saltColloidal NbN nanocrystals synthesized in molten halide saltColloidal Mo₂N nanocrystals synthesized in molten halide salColloidal Ta₃N₅ nanocrystals synthesized in molten halide saColloidal W₂N nanocrystals synthesized in molten halide salt | — | ||
| Formation Enthalpy | standard enthalpy of formation | -265.8kJ/mol | — | — | ||
| Formation Enthalpy | standard enthalpy of formation | -88.7kJ/mol | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Mobility of single vacancies and adatoms in graphene at room temperature
Epitaxial Growth of Cubic and Hexagonal InN Films and Their Alloys with AlN and GaN
Bias sputtering of granular L10-FePt films with hexagonal boron nitride grain boundaries
Method of Manufacturing Gallium Nitride Quantum Dots
Rapid Reduction of Nitrophenols Using Reusable Magnetic h-BN/Ni-NiO Nanocomposites
Anisotropic transverse magnetoresistance temperature dependence in Mn3Ga Weyl semimetal with chiral anomaly
Kinematical and dynamical contrast of dislocations in thick GaN substrates observed by synchrotron-radiation X-ray topography under six-beam diffraction conditions
Discovery of Graphene Sheets and C-Rich Micro-Oval structure in Stingless Bee Hive; Leading to an Emergent Material with Debut of Blue Emission
Comprehensive determination of Burgers vectors of threading dislocations in GaN substrates by combining reflection and transmission synchrotron-radiation x-ray topography
LAYERED GaN AND GaN NANOSHEET, AND ELECTRICAL DEVICE USING THE SAME
LAYERED GaAs, METHOD OF PREPARING SAME, AND GaAs NANOSHEET EXFOLIATED FROM SAME
Water Aging Effects on Graphene Nanoplatelets and Multi-walled Carbon Nanotube Reinforced Epoxy Glass Fiber Nanocomposites
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations5 characterizations5 properties6 figures
2 preparations2 characterizations1 property3 figures
2 preparations2 characterizations1 property3 figures
2 preparations2 characterizations1 property3 figures
2 preparations2 characterizations1 property3 figures
2 preparations2 characterizations1 property3 figures
2 preparations1 characterization1 property2 figures
2 preparations2 characterizations3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Xrd Crystallite Size | Scherrer size | 6.1nm | — | |||
| Xrd Crystallite Size | Scherrer size | 6.8nm | — | |||
| Xrd Crystallite Size | Scherrer size | 16.8nm | — | |||
| Xrd Crystallite Size | Scherrer size | —nm | — | |||
| Xrd Crystallite Size | Scherrer size | —nm | — | |||
| Xrd Crystallite Size | Scherrer size | —nm | — | |||
| Yield | reaction yield | 75% | — | |||
| Stability Time | oxidation resistance at 150 C in air | 24h | Colloidal GaN nanocrystals synthesized in molten halide saltColloidal VN nanocrystals synthesized in molten halide saltsColloidal TiN nanocrystals synthesized in molten halide saltColloidal NbN nanocrystals synthesized in molten halide saltColloidal Mo₂N nanocrystals synthesized in molten halide salColloidal Ta₃N₅ nanocrystals synthesized in molten halide saColloidal W₂N nanocrystals synthesized in molten halide salt | — | ||
| Formation Enthalpy | standard enthalpy of formation | -265.8kJ/mol | — | — | ||
| Formation Enthalpy | standard enthalpy of formation | -88.7kJ/mol | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Mobility of single vacancies and adatoms in graphene at room temperature
Epitaxial Growth of Cubic and Hexagonal InN Films and Their Alloys with AlN and GaN
Bias sputtering of granular L10-FePt films with hexagonal boron nitride grain boundaries
Method of Manufacturing Gallium Nitride Quantum Dots
Rapid Reduction of Nitrophenols Using Reusable Magnetic h-BN/Ni-NiO Nanocomposites
Anisotropic transverse magnetoresistance temperature dependence in Mn3Ga Weyl semimetal with chiral anomaly
Kinematical and dynamical contrast of dislocations in thick GaN substrates observed by synchrotron-radiation X-ray topography under six-beam diffraction conditions
Discovery of Graphene Sheets and C-Rich Micro-Oval structure in Stingless Bee Hive; Leading to an Emergent Material with Debut of Blue Emission
Comprehensive determination of Burgers vectors of threading dislocations in GaN substrates by combining reflection and transmission synchrotron-radiation x-ray topography
LAYERED GaN AND GaN NANOSHEET, AND ELECTRICAL DEVICE USING THE SAME
LAYERED GaAs, METHOD OF PREPARING SAME, AND GaAs NANOSHEET EXFOLIATED FROM SAME
Water Aging Effects on Graphene Nanoplatelets and Multi-walled Carbon Nanotube Reinforced Epoxy Glass Fiber Nanocomposites