Patent
Atlas literature
Patent
US 12,180,584 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view of a system for fabricating hexagonal boron nitride according to an embodiment; 40
FIG. 2 is an atomic force microscope photograph of the surface of the hexagonal boron nitride fabricated by the system of
FIG. 3 shows the low-energy electron diffraction mea- surement results of the hexagonal boron nitride fabricated by 45 the system of
FIG. 4 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown at a tempera- ture of 400° C.;
FIG. 5 is a graph showing the Raman spectrum measure- 50 ment results of hexagonal boron nitride grown at a tempera- ture of 500° C.;
FIG. 6 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown at a tempera- ture of 600° C.; 55
FIG. 7 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown at a tempera- ture of 800° C.;
FIG. 8 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown by the 60 method according to Comparative Example 1;
FIG. 9 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown by the method according to Comparative Example 2;
FIGS. 10A to 10E are schematic perspective views illus- 65 trating a process of manufacturing a field effect transistor using hexagonal boron nitride; and B₂
FIG. 11 is a cross-sectional view of a schematic structure of a semiconductor device including hexagonal boron nitride.
FIG. 55 8, in the hexagonal boron nitride fabricated at 700° C., no peak appeared at 1370 cm⁻¹, and in the hexagonal boron nitride fabricated at 800° C. and …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating hexagonal boron nitride, the method comprising: placing a catalytic metal in a chamber, the catalytic metal having a hexagonal crystal structure and having a lattice mismatch of greater than or equal to 0% and less than or equal to 15% with hexagonal boron nitride (h-BN); removing pollutants from a surface of the catalytic metal; and growing hexagonal boron nitride on the catalytic metal at a temperature of 600° C. to 800° C. while supplying a nitrogen source and a boron source into the chamber, wherein the hexagonal boron nitride is grown directly on the catalytic metal, and the catalytic metal includes crystals osmium (Os), wherein the removing the pollutants from the surface of the catalytic metal includes supplying hydrogen (H₂) gas into the chamber and increasing a temperature in the chamber to 1,000° C., wherein the removing the pollutants from the surface of the catalytic metal is performed for 20 minutes while supplying the hydrogen gas at a flow rate of 100 sccm, and wherein the growing the hexagonal boron nitride provides 5 a grown hexagonal boron nitride with a Raman spec-trum having a peak at about 1370 cm⁻¹ and a peak at about 1450 cm⁻¹, and an intensity of the peak at about 1370 cm⁻¹ is greater than an intensity of the peak at about 1450 cm⁻¹.
The method of claim 1, wherein the catalytic metal further includes crystals of at least one of a Co—Cr alloy, a Co—N alloy, a Co—Ir alloy, and rhenium (Re).
The method of claim 1, wherein the nitrogen source and the boron source include at least one of borazine, 1,3,5-trimethylborazine, 2,4,6-trim-ethylborazine, aminoborane, 2,4,6-trichloroborazine, B-tri(methylamino) borazine, and ammonia borane.
The method of claim 1, wherein the nitrogen source includes at least one of ammonia (NH₃) gas and nitrogen (N₂) gas.
The method of claim 1, wherein the boron source includes at least one of BH3, BF3, BCl3, B₂H6, (CH₃CH₂) 3B, and (CH₃)3B.
The method of claim 1, wherein the nitrogen source and the boron source are provided by vaporizing solid boron nitride powder.
The method of claim 1, wherein the growing the hexagonal boron nitride is performed by inductively coupled plasma chemical vapor deposition.
The method of claim 1, wherein the growing the hexagonal boron nitride includes: supplying hydrogen (H₂) gas into the chamber at a flow rate of 0 sccm to 100 sccm, supplying argon (Ar) gas into the chamber at a flow rate of 0 sccm to 100 sccm, supplying borazine gas into the chamber at a flow rate of 0.01 sccm to 1 sccm, and maintaining pressure in the chamber at 0.01 Torr to 1 Torr.
The method of claim 1, wherein a lattice mismatch between the catalytic metal and the hexagonal boron nitride is greater than or equal to 0% and less than or equal to 10.4%.
The method of claim 1, wherein growing the grown hexagonal boron nitride and a root mean square surface roughness of the grown hexagonal boron nitride is 2 nm or less and greater than or equal to 0 nm.
The method of claim 1, wherein the growing hexagonal boron nitride is performed after the removing the pollutants from the surface of the catalytic metal is performed.
A method of fabricating hexagonal boron nitride, the method comprising: placing a catalytic metal in a chamber, the catalytic metal having a hexagonal crystal structure and including crystals of osmium (Os); and directly growing hexagonal boron nitride on the catalytic metal at a temperature in a range of about 600° C. to about 800° C. while supplying a nitrogen source and a boron source into the chamber, wherein the directly growing the hexagonal boron nitride provides a grown hexagonal boron nitride with a Raman spectrum having a peak at about 1370 cm⁻¹ and a peak at about 1450 cm⁻¹, and an intensity of the peak at about 1370 cm⁻¹ is greater than an intensity of the peak at about 1450 cm⁻¹.
The method of claim 13, wherein the directly growing hexagonal boron nitride includes: supplying hydrogen (H₂) gas into the chamber at a flow rate of 0 sccm to 100 sccm, supplying argon (Ar) gas into the chamber at a flow rate of 0 sccm to 100 sccm, supplying borazine gas into the chamber at a flow rate of 0.01 sccm to 1 sccm, and maintaining pressure in the chamber at 0.01 Torr to 1 Torr.
The method of claim 13, wherein the directly growing hexagonal boron nitride is performed by inductively coupled plasma chemical vapor deposition.
The method of claim 13, further comprising: removing pollutants from a surface of the catalytic metal before the growing the hexagonal boron nitride.
The method of claim 13, wherein the nitrogen source and the boron source include at least one of borazine, 1,3,5-trimethylborazine, 2,4,6-trim-ethylborazine, aminoborane, 2,4,6-trichloroborazine, B-tri(methylamino) borazine, and ammonia borane.
Materials described outside the worked examples.
hexagonal boron nitride
h-BN
osmium
Os
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is an atomic force microscope photograph of the surface of the hexagonal boron nitride fabricated by the system of
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Raman peak of grown h-BN at ~1370 cm-1 (h-BN E2g mode) | 1370 cm⁻¹ | h-BN |
Raman peak of grown h-BN at ~1450 cm-1 |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 18
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HEXAGONAL BORON NITRIDE SHEET, METHOD OF PREPARING THE HEXAGONAL BORON NITRIDE SHEET, AND ELECTRONIC DEVICE INCLUDING THE HEXAGONAL BORON NITRIDE SHEET
SINGLE CRYSTALLINE GRAPHENE SHEET AND PROCESS OF PREPARING THE SAME
Patent
Atlas literature
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US 12,180,584 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view of a system for fabricating hexagonal boron nitride according to an embodiment; 40
FIG. 2 is an atomic force microscope photograph of the surface of the hexagonal boron nitride fabricated by the system of
FIG. 3 shows the low-energy electron diffraction mea- surement results of the hexagonal boron nitride fabricated by 45 the system of
FIG. 4 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown at a tempera- ture of 400° C.;
FIG. 5 is a graph showing the Raman spectrum measure- 50 ment results of hexagonal boron nitride grown at a tempera- ture of 500° C.;
FIG. 6 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown at a tempera- ture of 600° C.; 55
FIG. 7 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown at a tempera- ture of 800° C.;
FIG. 8 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown by the 60 method according to Comparative Example 1;
FIG. 9 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown by the method according to Comparative Example 2;
FIGS. 10A to 10E are schematic perspective views illus- 65 trating a process of manufacturing a field effect transistor using hexagonal boron nitride; and B₂
FIG. 11 is a cross-sectional view of a schematic structure of a semiconductor device including hexagonal boron nitride.
FIG. 55 8, in the hexagonal boron nitride fabricated at 700° C., no peak appeared at 1370 cm⁻¹, and in the hexagonal boron nitride fabricated at 800° C. and …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating hexagonal boron nitride, the method comprising: placing a catalytic metal in a chamber, the catalytic metal having a hexagonal crystal structure and having a lattice mismatch of greater than or equal to 0% and less than or equal to 15% with hexagonal boron nitride (h-BN); removing pollutants from a surface of the catalytic metal; and growing hexagonal boron nitride on the catalytic metal at a temperature of 600° C. to 800° C. while supplying a nitrogen source and a boron source into the chamber, wherein the hexagonal boron nitride is grown directly on the catalytic metal, and the catalytic metal includes crystals osmium (Os), wherein the removing the pollutants from the surface of the catalytic metal includes supplying hydrogen (H₂) gas into the chamber and increasing a temperature in the chamber to 1,000° C., wherein the removing the pollutants from the surface of the catalytic metal is performed for 20 minutes while supplying the hydrogen gas at a flow rate of 100 sccm, and wherein the growing the hexagonal boron nitride provides 5 a grown hexagonal boron nitride with a Raman spec-trum having a peak at about 1370 cm⁻¹ and a peak at about 1450 cm⁻¹, and an intensity of the peak at about 1370 cm⁻¹ is greater than an intensity of the peak at about 1450 cm⁻¹.
The method of claim 1, wherein the catalytic metal further includes crystals of at least one of a Co—Cr alloy, a Co—N alloy, a Co—Ir alloy, and rhenium (Re).
The method of claim 1, wherein the nitrogen source and the boron source include at least one of borazine, 1,3,5-trimethylborazine, 2,4,6-trim-ethylborazine, aminoborane, 2,4,6-trichloroborazine, B-tri(methylamino) borazine, and ammonia borane.
The method of claim 1, wherein the nitrogen source includes at least one of ammonia (NH₃) gas and nitrogen (N₂) gas.
The method of claim 1, wherein the boron source includes at least one of BH3, BF3, BCl3, B₂H6, (CH₃CH₂) 3B, and (CH₃)3B.
The method of claim 1, wherein the nitrogen source and the boron source are provided by vaporizing solid boron nitride powder.
The method of claim 1, wherein the growing the hexagonal boron nitride is performed by inductively coupled plasma chemical vapor deposition.
The method of claim 1, wherein the growing the hexagonal boron nitride includes: supplying hydrogen (H₂) gas into the chamber at a flow rate of 0 sccm to 100 sccm, supplying argon (Ar) gas into the chamber at a flow rate of 0 sccm to 100 sccm, supplying borazine gas into the chamber at a flow rate of 0.01 sccm to 1 sccm, and maintaining pressure in the chamber at 0.01 Torr to 1 Torr.
The method of claim 1, wherein a lattice mismatch between the catalytic metal and the hexagonal boron nitride is greater than or equal to 0% and less than or equal to 10.4%.
The method of claim 1, wherein growing the grown hexagonal boron nitride and a root mean square surface roughness of the grown hexagonal boron nitride is 2 nm or less and greater than or equal to 0 nm.
The method of claim 1, wherein the growing hexagonal boron nitride is performed after the removing the pollutants from the surface of the catalytic metal is performed.
A method of fabricating hexagonal boron nitride, the method comprising: placing a catalytic metal in a chamber, the catalytic metal having a hexagonal crystal structure and including crystals of osmium (Os); and directly growing hexagonal boron nitride on the catalytic metal at a temperature in a range of about 600° C. to about 800° C. while supplying a nitrogen source and a boron source into the chamber, wherein the directly growing the hexagonal boron nitride provides a grown hexagonal boron nitride with a Raman spectrum having a peak at about 1370 cm⁻¹ and a peak at about 1450 cm⁻¹, and an intensity of the peak at about 1370 cm⁻¹ is greater than an intensity of the peak at about 1450 cm⁻¹.
The method of claim 13, wherein the directly growing hexagonal boron nitride includes: supplying hydrogen (H₂) gas into the chamber at a flow rate of 0 sccm to 100 sccm, supplying argon (Ar) gas into the chamber at a flow rate of 0 sccm to 100 sccm, supplying borazine gas into the chamber at a flow rate of 0.01 sccm to 1 sccm, and maintaining pressure in the chamber at 0.01 Torr to 1 Torr.
The method of claim 13, wherein the directly growing hexagonal boron nitride is performed by inductively coupled plasma chemical vapor deposition.
The method of claim 13, further comprising: removing pollutants from a surface of the catalytic metal before the growing the hexagonal boron nitride.
The method of claim 13, wherein the nitrogen source and the boron source include at least one of borazine, 1,3,5-trimethylborazine, 2,4,6-trim-ethylborazine, aminoborane, 2,4,6-trichloroborazine, B-tri(methylamino) borazine, and ammonia borane.
Materials described outside the worked examples.
hexagonal boron nitride
h-BN
osmium
Os
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is an atomic force microscope photograph of the surface of the hexagonal boron nitride fabricated by the system of
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Raman peak of grown h-BN at ~1370 cm-1 (h-BN E2g mode) | 1370 cm⁻¹ | h-BN |
Raman peak of grown h-BN at ~1450 cm-1 |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 18
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HEXAGONAL BORON NITRIDE SHEET, METHOD OF PREPARING THE HEXAGONAL BORON NITRIDE SHEET, AND ELECTRONIC DEVICE INCLUDING THE HEXAGONAL BORON NITRIDE SHEET
SINGLE CRYSTALLINE GRAPHENE SHEET AND PROCESS OF PREPARING THE SAME
Patent
Atlas literature
Patent
US 12,180,584 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view of a system for fabricating hexagonal boron nitride according to an embodiment; 40
FIG. 2 is an atomic force microscope photograph of the surface of the hexagonal boron nitride fabricated by the system of
FIG. 3 shows the low-energy electron diffraction mea- surement results of the hexagonal boron nitride fabricated by 45 the system of
FIG. 4 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown at a tempera- ture of 400° C.;
FIG. 5 is a graph showing the Raman spectrum measure- 50 ment results of hexagonal boron nitride grown at a tempera- ture of 500° C.;
FIG. 6 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown at a tempera- ture of 600° C.; 55
FIG. 7 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown at a tempera- ture of 800° C.;
FIG. 8 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown by the 60 method according to Comparative Example 1;
FIG. 9 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown by the method according to Comparative Example 2;
FIGS. 10A to 10E are schematic perspective views illus- 65 trating a process of manufacturing a field effect transistor using hexagonal boron nitride; and B₂
FIG. 11 is a cross-sectional view of a schematic structure of a semiconductor device including hexagonal boron nitride.
FIG. 55 8, in the hexagonal boron nitride fabricated at 700° C., no peak appeared at 1370 cm⁻¹, and in the hexagonal boron nitride fabricated at 800° C. and …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating hexagonal boron nitride, the method comprising: placing a catalytic metal in a chamber, the catalytic metal having a hexagonal crystal structure and having a lattice mismatch of greater than or equal to 0% and less than or equal to 15% with hexagonal boron nitride (h-BN); removing pollutants from a surface of the catalytic metal; and growing hexagonal boron nitride on the catalytic metal at a temperature of 600° C. to 800° C. while supplying a nitrogen source and a boron source into the chamber, wherein the hexagonal boron nitride is grown directly on the catalytic metal, and the catalytic metal includes crystals osmium (Os), wherein the removing the pollutants from the surface of the catalytic metal includes supplying hydrogen (H₂) gas into the chamber and increasing a temperature in the chamber to 1,000° C., wherein the removing the pollutants from the surface of the catalytic metal is performed for 20 minutes while supplying the hydrogen gas at a flow rate of 100 sccm, and wherein the growing the hexagonal boron nitride provides 5 a grown hexagonal boron nitride with a Raman spec-trum having a peak at about 1370 cm⁻¹ and a peak at about 1450 cm⁻¹, and an intensity of the peak at about 1370 cm⁻¹ is greater than an intensity of the peak at about 1450 cm⁻¹.
The method of claim 1, wherein the catalytic metal further includes crystals of at least one of a Co—Cr alloy, a Co—N alloy, a Co—Ir alloy, and rhenium (Re).
The method of claim 1, wherein the nitrogen source and the boron source include at least one of borazine, 1,3,5-trimethylborazine, 2,4,6-trim-ethylborazine, aminoborane, 2,4,6-trichloroborazine, B-tri(methylamino) borazine, and ammonia borane.
The method of claim 1, wherein the nitrogen source includes at least one of ammonia (NH₃) gas and nitrogen (N₂) gas.
The method of claim 1, wherein the boron source includes at least one of BH3, BF3, BCl3, B₂H6, (CH₃CH₂) 3B, and (CH₃)3B.
The method of claim 1, wherein the nitrogen source and the boron source are provided by vaporizing solid boron nitride powder.
The method of claim 1, wherein the growing the hexagonal boron nitride is performed by inductively coupled plasma chemical vapor deposition.
The method of claim 1, wherein the growing the hexagonal boron nitride includes: supplying hydrogen (H₂) gas into the chamber at a flow rate of 0 sccm to 100 sccm, supplying argon (Ar) gas into the chamber at a flow rate of 0 sccm to 100 sccm, supplying borazine gas into the chamber at a flow rate of 0.01 sccm to 1 sccm, and maintaining pressure in the chamber at 0.01 Torr to 1 Torr.
The method of claim 1, wherein a lattice mismatch between the catalytic metal and the hexagonal boron nitride is greater than or equal to 0% and less than or equal to 10.4%.
The method of claim 1, wherein growing the grown hexagonal boron nitride and a root mean square surface roughness of the grown hexagonal boron nitride is 2 nm or less and greater than or equal to 0 nm.
The method of claim 1, wherein the growing hexagonal boron nitride is performed after the removing the pollutants from the surface of the catalytic metal is performed.
A method of fabricating hexagonal boron nitride, the method comprising: placing a catalytic metal in a chamber, the catalytic metal having a hexagonal crystal structure and including crystals of osmium (Os); and directly growing hexagonal boron nitride on the catalytic metal at a temperature in a range of about 600° C. to about 800° C. while supplying a nitrogen source and a boron source into the chamber, wherein the directly growing the hexagonal boron nitride provides a grown hexagonal boron nitride with a Raman spectrum having a peak at about 1370 cm⁻¹ and a peak at about 1450 cm⁻¹, and an intensity of the peak at about 1370 cm⁻¹ is greater than an intensity of the peak at about 1450 cm⁻¹.
The method of claim 13, wherein the directly growing hexagonal boron nitride includes: supplying hydrogen (H₂) gas into the chamber at a flow rate of 0 sccm to 100 sccm, supplying argon (Ar) gas into the chamber at a flow rate of 0 sccm to 100 sccm, supplying borazine gas into the chamber at a flow rate of 0.01 sccm to 1 sccm, and maintaining pressure in the chamber at 0.01 Torr to 1 Torr.
The method of claim 13, wherein the directly growing hexagonal boron nitride is performed by inductively coupled plasma chemical vapor deposition.
The method of claim 13, further comprising: removing pollutants from a surface of the catalytic metal before the growing the hexagonal boron nitride.
The method of claim 13, wherein the nitrogen source and the boron source include at least one of borazine, 1,3,5-trimethylborazine, 2,4,6-trim-ethylborazine, aminoborane, 2,4,6-trichloroborazine, B-tri(methylamino) borazine, and ammonia borane.
Materials described outside the worked examples.
hexagonal boron nitride
h-BN
osmium
Os
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is an atomic force microscope photograph of the surface of the hexagonal boron nitride fabricated by the system of
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Raman peak of grown h-BN at ~1370 cm-1 (h-BN E2g mode) | 1370 cm⁻¹ | h-BN |
Raman peak of grown h-BN at ~1450 cm-1 |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 18
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HEXAGONAL BORON NITRIDE SHEET, METHOD OF PREPARING THE HEXAGONAL BORON NITRIDE SHEET, AND ELECTRONIC DEVICE INCLUDING THE HEXAGONAL BORON NITRIDE SHEET
SINGLE CRYSTALLINE GRAPHENE SHEET AND PROCESS OF PREPARING THE SAME
Patent
Atlas literature
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US 12,180,584 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view of a system for fabricating hexagonal boron nitride according to an embodiment; 40
FIG. 2 is an atomic force microscope photograph of the surface of the hexagonal boron nitride fabricated by the system of
FIG. 3 shows the low-energy electron diffraction mea- surement results of the hexagonal boron nitride fabricated by 45 the system of
FIG. 4 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown at a tempera- ture of 400° C.;
FIG. 5 is a graph showing the Raman spectrum measure- 50 ment results of hexagonal boron nitride grown at a tempera- ture of 500° C.;
FIG. 6 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown at a tempera- ture of 600° C.; 55
FIG. 7 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown at a tempera- ture of 800° C.;
FIG. 8 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown by the 60 method according to Comparative Example 1;
FIG. 9 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown by the method according to Comparative Example 2;
FIGS. 10A to 10E are schematic perspective views illus- 65 trating a process of manufacturing a field effect transistor using hexagonal boron nitride; and B₂
FIG. 11 is a cross-sectional view of a schematic structure of a semiconductor device including hexagonal boron nitride.
FIG. 55 8, in the hexagonal boron nitride fabricated at 700° C., no peak appeared at 1370 cm⁻¹, and in the hexagonal boron nitride fabricated at 800° C. and …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating hexagonal boron nitride, the method comprising: placing a catalytic metal in a chamber, the catalytic metal having a hexagonal crystal structure and having a lattice mismatch of greater than or equal to 0% and less than or equal to 15% with hexagonal boron nitride (h-BN); removing pollutants from a surface of the catalytic metal; and growing hexagonal boron nitride on the catalytic metal at a temperature of 600° C. to 800° C. while supplying a nitrogen source and a boron source into the chamber, wherein the hexagonal boron nitride is grown directly on the catalytic metal, and the catalytic metal includes crystals osmium (Os), wherein the removing the pollutants from the surface of the catalytic metal includes supplying hydrogen (H₂) gas into the chamber and increasing a temperature in the chamber to 1,000° C., wherein the removing the pollutants from the surface of the catalytic metal is performed for 20 minutes while supplying the hydrogen gas at a flow rate of 100 sccm, and wherein the growing the hexagonal boron nitride provides 5 a grown hexagonal boron nitride with a Raman spec-trum having a peak at about 1370 cm⁻¹ and a peak at about 1450 cm⁻¹, and an intensity of the peak at about 1370 cm⁻¹ is greater than an intensity of the peak at about 1450 cm⁻¹.
The method of claim 1, wherein the catalytic metal further includes crystals of at least one of a Co—Cr alloy, a Co—N alloy, a Co—Ir alloy, and rhenium (Re).
The method of claim 1, wherein the nitrogen source and the boron source include at least one of borazine, 1,3,5-trimethylborazine, 2,4,6-trim-ethylborazine, aminoborane, 2,4,6-trichloroborazine, B-tri(methylamino) borazine, and ammonia borane.
The method of claim 1, wherein the nitrogen source includes at least one of ammonia (NH₃) gas and nitrogen (N₂) gas.
The method of claim 1, wherein the boron source includes at least one of BH3, BF3, BCl3, B₂H6, (CH₃CH₂) 3B, and (CH₃)3B.
The method of claim 1, wherein the nitrogen source and the boron source are provided by vaporizing solid boron nitride powder.
The method of claim 1, wherein the growing the hexagonal boron nitride is performed by inductively coupled plasma chemical vapor deposition.
The method of claim 1, wherein the growing the hexagonal boron nitride includes: supplying hydrogen (H₂) gas into the chamber at a flow rate of 0 sccm to 100 sccm, supplying argon (Ar) gas into the chamber at a flow rate of 0 sccm to 100 sccm, supplying borazine gas into the chamber at a flow rate of 0.01 sccm to 1 sccm, and maintaining pressure in the chamber at 0.01 Torr to 1 Torr.
The method of claim 1, wherein a lattice mismatch between the catalytic metal and the hexagonal boron nitride is greater than or equal to 0% and less than or equal to 10.4%.
The method of claim 1, wherein growing the grown hexagonal boron nitride and a root mean square surface roughness of the grown hexagonal boron nitride is 2 nm or less and greater than or equal to 0 nm.
The method of claim 1, wherein the growing hexagonal boron nitride is performed after the removing the pollutants from the surface of the catalytic metal is performed.
A method of fabricating hexagonal boron nitride, the method comprising: placing a catalytic metal in a chamber, the catalytic metal having a hexagonal crystal structure and including crystals of osmium (Os); and directly growing hexagonal boron nitride on the catalytic metal at a temperature in a range of about 600° C. to about 800° C. while supplying a nitrogen source and a boron source into the chamber, wherein the directly growing the hexagonal boron nitride provides a grown hexagonal boron nitride with a Raman spectrum having a peak at about 1370 cm⁻¹ and a peak at about 1450 cm⁻¹, and an intensity of the peak at about 1370 cm⁻¹ is greater than an intensity of the peak at about 1450 cm⁻¹.
The method of claim 13, wherein the directly growing hexagonal boron nitride includes: supplying hydrogen (H₂) gas into the chamber at a flow rate of 0 sccm to 100 sccm, supplying argon (Ar) gas into the chamber at a flow rate of 0 sccm to 100 sccm, supplying borazine gas into the chamber at a flow rate of 0.01 sccm to 1 sccm, and maintaining pressure in the chamber at 0.01 Torr to 1 Torr.
The method of claim 13, wherein the directly growing hexagonal boron nitride is performed by inductively coupled plasma chemical vapor deposition.
The method of claim 13, further comprising: removing pollutants from a surface of the catalytic metal before the growing the hexagonal boron nitride.
The method of claim 13, wherein the nitrogen source and the boron source include at least one of borazine, 1,3,5-trimethylborazine, 2,4,6-trim-ethylborazine, aminoborane, 2,4,6-trichloroborazine, B-tri(methylamino) borazine, and ammonia borane.
Materials described outside the worked examples.
hexagonal boron nitride
h-BN
osmium
Os
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is an atomic force microscope photograph of the surface of the hexagonal boron nitride fabricated by the system of
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Raman peak of grown h-BN at ~1370 cm-1 (h-BN E2g mode) | 1370 cm⁻¹ | h-BN |
Raman peak of grown h-BN at ~1450 cm-1 |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 18
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HEXAGONAL BORON NITRIDE SHEET, METHOD OF PREPARING THE HEXAGONAL BORON NITRIDE SHEET, AND ELECTRONIC DEVICE INCLUDING THE HEXAGONAL BORON NITRIDE SHEET
SINGLE CRYSTALLINE GRAPHENE SHEET AND PROCESS OF PREPARING THE SAME
hydrogen gas
H₂
Co-Cr alloy
Co-N alloy
Co-Ir alloy
rhenium
Re
borazine and related B-N compounds
cobalt
Co
zinc
Zn
ruthenium
Ru
technetium
Tc
FIG. 3 shows the low-energy electron diffraction mea- surement results of the hexagonal boron nitride fabricated by 45 the system of
FIG. 4 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown at a tempera- ture of 400° C.;
FIG. 4 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown at a tempera- ture of 400° C.;
FIG. 5 is a graph showing the Raman spectrum measure- 50 ment results of hexagonal boron nitride grown at a tempera- ture of 500° C.;
FIG. 5 is a graph showing the Raman spectrum measure- 50 ment results of hexagonal boron nitride grown at a tempera- ture of 500° C.;
FIG. 6 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown at a tempera- ture of 600° C.; 55
FIG. 6 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown at a tempera- ture of 600° C.; 55
FIG. 7 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown at a tempera- ture of 800° C.;
FIG. 7 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown at a tempera- ture of 800° C.;
FIG. 8 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown by the 60 method according to Comparative Example 1;
FIG. 8 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown by the 60 method according to Comparative Example 1;
FIG. 9 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown by the method according to Comparative Example 2;
FIG. 9 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown by the method according to Comparative Example 2;
FIGS. 10A to 10E are schematic perspective views illus- 65 trating a process of manufacturing a field effect transistor using hexagonal boron nitride; and B₂
| 1450 cm⁻¹ |
h-BN |
root mean square surface roughness of grown h-BN (claimed upper bound) | 2 nm | h-BN |
root mean square surface roughness of grown h-BN (tighter claimed upper bound) | 1.7 nm | h-BN |
Flow Rate | 0.01–1 sccm | — |
Flow Rate | 0–100 sccm | — |
Pressure | 0.01–1 Torr | — |
Temperature | 350–800 °C | — |
Temperature | 600–800 °C | — |
Thickness | ≥ 0 nm | — |
Cited non-patent literature · 3
hydrogen gas
H₂
Co-Cr alloy
Co-N alloy
Co-Ir alloy
rhenium
Re
borazine and related B-N compounds
cobalt
Co
zinc
Zn
ruthenium
Ru
technetium
Tc
FIG. 3 shows the low-energy electron diffraction mea- surement results of the hexagonal boron nitride fabricated by 45 the system of
FIG. 4 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown at a tempera- ture of 400° C.;
FIG. 4 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown at a tempera- ture of 400° C.;
FIG. 5 is a graph showing the Raman spectrum measure- 50 ment results of hexagonal boron nitride grown at a tempera- ture of 500° C.;
FIG. 5 is a graph showing the Raman spectrum measure- 50 ment results of hexagonal boron nitride grown at a tempera- ture of 500° C.;
FIG. 6 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown at a tempera- ture of 600° C.; 55
FIG. 6 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown at a tempera- ture of 600° C.; 55
FIG. 7 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown at a tempera- ture of 800° C.;
FIG. 7 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown at a tempera- ture of 800° C.;
FIG. 8 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown by the 60 method according to Comparative Example 1;
FIG. 8 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown by the 60 method according to Comparative Example 1;
FIG. 9 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown by the method according to Comparative Example 2;
FIG. 9 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown by the method according to Comparative Example 2;
FIGS. 10A to 10E are schematic perspective views illus- 65 trating a process of manufacturing a field effect transistor using hexagonal boron nitride; and B₂
| 1450 cm⁻¹ |
h-BN |
root mean square surface roughness of grown h-BN (claimed upper bound) | 2 nm | h-BN |
root mean square surface roughness of grown h-BN (tighter claimed upper bound) | 1.7 nm | h-BN |
Flow Rate | 0.01–1 sccm | — |
Flow Rate | 0–100 sccm | — |
Pressure | 0.01–1 Torr | — |
Temperature | 350–800 °C | — |
Temperature | 600–800 °C | — |
Thickness | ≥ 0 nm | — |
Cited non-patent literature · 3
hydrogen gas
H₂
Co-Cr alloy
Co-N alloy
Co-Ir alloy
rhenium
Re
borazine and related B-N compounds
cobalt
Co
zinc
Zn
ruthenium
Ru
technetium
Tc
FIG. 3 shows the low-energy electron diffraction mea- surement results of the hexagonal boron nitride fabricated by 45 the system of
FIG. 4 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown at a tempera- ture of 400° C.;
FIG. 4 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown at a tempera- ture of 400° C.;
FIG. 5 is a graph showing the Raman spectrum measure- 50 ment results of hexagonal boron nitride grown at a tempera- ture of 500° C.;
FIG. 5 is a graph showing the Raman spectrum measure- 50 ment results of hexagonal boron nitride grown at a tempera- ture of 500° C.;
FIG. 6 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown at a tempera- ture of 600° C.; 55
FIG. 6 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown at a tempera- ture of 600° C.; 55
FIG. 7 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown at a tempera- ture of 800° C.;
FIG. 7 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown at a tempera- ture of 800° C.;
FIG. 8 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown by the 60 method according to Comparative Example 1;
FIG. 8 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown by the 60 method according to Comparative Example 1;
FIG. 9 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown by the method according to Comparative Example 2;
FIG. 9 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown by the method according to Comparative Example 2;
FIGS. 10A to 10E are schematic perspective views illus- 65 trating a process of manufacturing a field effect transistor using hexagonal boron nitride; and B₂
| 1450 cm⁻¹ |
h-BN |
root mean square surface roughness of grown h-BN (claimed upper bound) | 2 nm | h-BN |
root mean square surface roughness of grown h-BN (tighter claimed upper bound) | 1.7 nm | h-BN |
Flow Rate | 0.01–1 sccm | — |
Flow Rate | 0–100 sccm | — |
Pressure | 0.01–1 Torr | — |
Temperature | 350–800 °C | — |
Temperature | 600–800 °C | — |
Thickness | ≥ 0 nm | — |
Cited non-patent literature · 3
hydrogen gas
H₂
Co-Cr alloy
Co-N alloy
Co-Ir alloy
rhenium
Re
borazine and related B-N compounds
cobalt
Co
zinc
Zn
ruthenium
Ru
technetium
Tc
FIG. 3 shows the low-energy electron diffraction mea- surement results of the hexagonal boron nitride fabricated by 45 the system of
FIG. 4 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown at a tempera- ture of 400° C.;
FIG. 4 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown at a tempera- ture of 400° C.;
FIG. 5 is a graph showing the Raman spectrum measure- 50 ment results of hexagonal boron nitride grown at a tempera- ture of 500° C.;
FIG. 5 is a graph showing the Raman spectrum measure- 50 ment results of hexagonal boron nitride grown at a tempera- ture of 500° C.;
FIG. 6 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown at a tempera- ture of 600° C.; 55
FIG. 6 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown at a tempera- ture of 600° C.; 55
FIG. 7 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown at a tempera- ture of 800° C.;
FIG. 7 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown at a tempera- ture of 800° C.;
FIG. 8 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown by the 60 method according to Comparative Example 1;
FIG. 8 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown by the 60 method according to Comparative Example 1;
FIG. 9 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown by the method according to Comparative Example 2;
FIG. 9 is a graph showing the Raman spectrum measure- ment results of hexagonal boron nitride grown by the method according to Comparative Example 2;
FIGS. 10A to 10E are schematic perspective views illus- 65 trating a process of manufacturing a field effect transistor using hexagonal boron nitride; and B₂
| 1450 cm⁻¹ |
h-BN |
root mean square surface roughness of grown h-BN (claimed upper bound) | 2 nm | h-BN |
root mean square surface roughness of grown h-BN (tighter claimed upper bound) | 1.7 nm | h-BN |
Flow Rate | 0.01–1 sccm | — |
Flow Rate | 0–100 sccm | — |
Pressure | 0.01–1 Torr | — |
Temperature | 350–800 °C | — |
Temperature | 600–800 °C | — |
Thickness | ≥ 0 nm | — |
Cited non-patent literature · 3
