Patent
US 8,772,181of Invention METHOD FOR PRODUCING GRAPHENE, GRAPHENE PRODUCED ON
Suguru Noda
US
Copyright © 2026 Matter42. All rights reserved.
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Atlas literature
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US 8,772,181Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 O D is a diagram illustrating a process of a production method for a graphene 10 device; FIG. T₀ E is a diagram illustrating a process of a production …
FIG. 2 is a plan view showing the second example of graphene on a 16 substrate according to the present embodiment. The example will be described below …
FIG. 3 is a plan view showing the third example of graphene on a substrate according to the present embodiment. The example will be described below refe rr ing …
FIG. 4 is a diagram depicting a cross-section of a field effect transistor utilizing graphene on a substrate according to the present embodiment; 10 H G. 5 A is …
FIG. 6A is a plan view illustrating line-shaped graphene and the growing 30 direction thereof. The example will be described below refe rr ing to the figure. …
FIG. 7B), and further the metallic layer 504 is formed (FI G. 7C). As described above, it is possible that the order of formation of the carbon layer 502 and …
FIG. 8G is a diagram illustrating a process of a production method for a graphene device; 20
FIG. 9G is a diagram illustrating a process of a production method for a graphene device; 12 FI G. 9 H is a diagram illustrating a process of a production …
FIG. 11 D is a diagram illustrating a process of a production method for a graphene 20 device;
FIG. 12A is a diagram illustrating a process of a production method for a graphene 13 device; H G. 12B is a diagram illustrating a process of a production …
FIG. 13A is a graph showing a Raman spectrum in the event a solid solution layer 505 is formed and then quenched without etching, and FI G. 13B is a graph …
FIG. 14 is graphs showing features of Raman spectra for metallic layers 15 with various thicknesses, which are cooled after annealing, after etching for 3 m …
FIG. 15 A is a diagram showing an atomic force microscope image of patterned graphene 102 produced according to parameters A. FI G. 15B is a diagram showing an …
FIG. 16A is an enlarged view showing an atomic force microscope image of patterned graphene 102 produced according to the parameters B, and FI G. 16B is a 25 …
FIG. 17 is a diagram illustrating a process of a production direction for a graphene device 14 according to the present embodiment; H G. 18 is graphs showing …
FIG. 18 is graphs showing features of Raman spectra in the event a carbon layer 502 is formed on a metallic layer 504 and cooled after annealing, and after …
FIG. 19 is graphs showing features of Raman spectra co rr esponding to 48 heating temperatures. The example will be described below referring to the figure. …
FIG. 20 is a graph showing features of a Raman spectrum of a sample prepared by a mode performing reduction of a metal oxide in forming a solid solution layer. …
FIG. 21 is a scanning electron microscope picture showing final features of a graphene crystal when the hydrogen partial pressu m is 1 To rr. FI G. 22 is a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A production method for graphene comprising: a forming step for conducting heating to a solid solution temperature at which a solid solution of carbon dissolved in a metal is able to be formed, and forming a solid solution layer comprising the solid solution on a substrate, the solid solution layer comprising a metal in a solid state dissolving carbon, by heating to a solid solution temperature; and a removing step for growing the graphene made out of carbon precipitating from the solid solution la y er, by supplying an etching gas to remove removing the metal from the solid solution layer while maintaining the heating to the solid solution temperature.
The production method according to Claim 1, wherein in the forming step, a reducing agent that is able to reduce an oxide of the metal is supplied; and in the removing step, the metal contained in the solid solution layer is removed by supplying an etching gas.
The production method according to Claim 1, wherein a concentration distribution in a direction parallel to a surface of the substrate among concentration distributions of the carbon in the solid solution layer is made inhomogeneous, so as to grow the graphene in the direction parallel to the surface of the substrate.
. canceled
. canceled
. canceled
. canceled
Materials described outside the worked examples.
graphene
metal (solvent for solid solution)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a diagram depicting a cross-section of a field effect transistor utilizing graphene on a substrate according to the present embodiment; 10 H G. 5 A is …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 600–1000 °C | — |
Thickness | 25–35 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,772,181Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 O D is a diagram illustrating a process of a production method for a graphene 10 device; FIG. T₀ E is a diagram illustrating a process of a production …
FIG. 2 is a plan view showing the second example of graphene on a 16 substrate according to the present embodiment. The example will be described below …
FIG. 3 is a plan view showing the third example of graphene on a substrate according to the present embodiment. The example will be described below refe rr ing …
FIG. 4 is a diagram depicting a cross-section of a field effect transistor utilizing graphene on a substrate according to the present embodiment; 10 H G. 5 A is …
FIG. 6A is a plan view illustrating line-shaped graphene and the growing 30 direction thereof. The example will be described below refe rr ing to the figure. …
FIG. 7B), and further the metallic layer 504 is formed (FI G. 7C). As described above, it is possible that the order of formation of the carbon layer 502 and …
FIG. 8G is a diagram illustrating a process of a production method for a graphene device; 20
FIG. 9G is a diagram illustrating a process of a production method for a graphene device; 12 FI G. 9 H is a diagram illustrating a process of a production …
FIG. 11 D is a diagram illustrating a process of a production method for a graphene 20 device;
FIG. 12A is a diagram illustrating a process of a production method for a graphene 13 device; H G. 12B is a diagram illustrating a process of a production …
FIG. 13A is a graph showing a Raman spectrum in the event a solid solution layer 505 is formed and then quenched without etching, and FI G. 13B is a graph …
FIG. 14 is graphs showing features of Raman spectra for metallic layers 15 with various thicknesses, which are cooled after annealing, after etching for 3 m …
FIG. 15 A is a diagram showing an atomic force microscope image of patterned graphene 102 produced according to parameters A. FI G. 15B is a diagram showing an …
FIG. 16A is an enlarged view showing an atomic force microscope image of patterned graphene 102 produced according to the parameters B, and FI G. 16B is a 25 …
FIG. 17 is a diagram illustrating a process of a production direction for a graphene device 14 according to the present embodiment; H G. 18 is graphs showing …
FIG. 18 is graphs showing features of Raman spectra in the event a carbon layer 502 is formed on a metallic layer 504 and cooled after annealing, and after …
FIG. 19 is graphs showing features of Raman spectra co rr esponding to 48 heating temperatures. The example will be described below referring to the figure. …
FIG. 20 is a graph showing features of a Raman spectrum of a sample prepared by a mode performing reduction of a metal oxide in forming a solid solution layer. …
FIG. 21 is a scanning electron microscope picture showing final features of a graphene crystal when the hydrogen partial pressu m is 1 To rr. FI G. 22 is a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A production method for graphene comprising: a forming step for conducting heating to a solid solution temperature at which a solid solution of carbon dissolved in a metal is able to be formed, and forming a solid solution layer comprising the solid solution on a substrate, the solid solution layer comprising a metal in a solid state dissolving carbon, by heating to a solid solution temperature; and a removing step for growing the graphene made out of carbon precipitating from the solid solution la y er, by supplying an etching gas to remove removing the metal from the solid solution layer while maintaining the heating to the solid solution temperature.
The production method according to Claim 1, wherein in the forming step, a reducing agent that is able to reduce an oxide of the metal is supplied; and in the removing step, the metal contained in the solid solution layer is removed by supplying an etching gas.
The production method according to Claim 1, wherein a concentration distribution in a direction parallel to a surface of the substrate among concentration distributions of the carbon in the solid solution layer is made inhomogeneous, so as to grow the graphene in the direction parallel to the surface of the substrate.
. canceled
. canceled
. canceled
. canceled
Materials described outside the worked examples.
graphene
metal (solvent for solid solution)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a diagram depicting a cross-section of a field effect transistor utilizing graphene on a substrate according to the present embodiment; 10 H G. 5 A is …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 600–1000 °C | — |
Thickness | 25–35 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,772,181Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 O D is a diagram illustrating a process of a production method for a graphene 10 device; FIG. T₀ E is a diagram illustrating a process of a production …
FIG. 2 is a plan view showing the second example of graphene on a 16 substrate according to the present embodiment. The example will be described below …
FIG. 3 is a plan view showing the third example of graphene on a substrate according to the present embodiment. The example will be described below refe rr ing …
FIG. 4 is a diagram depicting a cross-section of a field effect transistor utilizing graphene on a substrate according to the present embodiment; 10 H G. 5 A is …
FIG. 6A is a plan view illustrating line-shaped graphene and the growing 30 direction thereof. The example will be described below refe rr ing to the figure. …
FIG. 7B), and further the metallic layer 504 is formed (FI G. 7C). As described above, it is possible that the order of formation of the carbon layer 502 and …
FIG. 8G is a diagram illustrating a process of a production method for a graphene device; 20
FIG. 9G is a diagram illustrating a process of a production method for a graphene device; 12 FI G. 9 H is a diagram illustrating a process of a production …
FIG. 11 D is a diagram illustrating a process of a production method for a graphene 20 device;
FIG. 12A is a diagram illustrating a process of a production method for a graphene 13 device; H G. 12B is a diagram illustrating a process of a production …
FIG. 13A is a graph showing a Raman spectrum in the event a solid solution layer 505 is formed and then quenched without etching, and FI G. 13B is a graph …
FIG. 14 is graphs showing features of Raman spectra for metallic layers 15 with various thicknesses, which are cooled after annealing, after etching for 3 m …
FIG. 15 A is a diagram showing an atomic force microscope image of patterned graphene 102 produced according to parameters A. FI G. 15B is a diagram showing an …
FIG. 16A is an enlarged view showing an atomic force microscope image of patterned graphene 102 produced according to the parameters B, and FI G. 16B is a 25 …
FIG. 17 is a diagram illustrating a process of a production direction for a graphene device 14 according to the present embodiment; H G. 18 is graphs showing …
FIG. 18 is graphs showing features of Raman spectra in the event a carbon layer 502 is formed on a metallic layer 504 and cooled after annealing, and after …
FIG. 19 is graphs showing features of Raman spectra co rr esponding to 48 heating temperatures. The example will be described below referring to the figure. …
FIG. 20 is a graph showing features of a Raman spectrum of a sample prepared by a mode performing reduction of a metal oxide in forming a solid solution layer. …
FIG. 21 is a scanning electron microscope picture showing final features of a graphene crystal when the hydrogen partial pressu m is 1 To rr. FI G. 22 is a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A production method for graphene comprising: a forming step for conducting heating to a solid solution temperature at which a solid solution of carbon dissolved in a metal is able to be formed, and forming a solid solution layer comprising the solid solution on a substrate, the solid solution layer comprising a metal in a solid state dissolving carbon, by heating to a solid solution temperature; and a removing step for growing the graphene made out of carbon precipitating from the solid solution la y er, by supplying an etching gas to remove removing the metal from the solid solution layer while maintaining the heating to the solid solution temperature.
The production method according to Claim 1, wherein in the forming step, a reducing agent that is able to reduce an oxide of the metal is supplied; and in the removing step, the metal contained in the solid solution layer is removed by supplying an etching gas.
The production method according to Claim 1, wherein a concentration distribution in a direction parallel to a surface of the substrate among concentration distributions of the carbon in the solid solution layer is made inhomogeneous, so as to grow the graphene in the direction parallel to the surface of the substrate.
. canceled
. canceled
. canceled
. canceled
Materials described outside the worked examples.
graphene
metal (solvent for solid solution)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a diagram depicting a cross-section of a field effect transistor utilizing graphene on a substrate according to the present embodiment; 10 H G. 5 A is …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 600–1000 °C | — |
Thickness | 25–35 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,772,181Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 O D is a diagram illustrating a process of a production method for a graphene 10 device; FIG. T₀ E is a diagram illustrating a process of a production …
FIG. 2 is a plan view showing the second example of graphene on a 16 substrate according to the present embodiment. The example will be described below …
FIG. 3 is a plan view showing the third example of graphene on a substrate according to the present embodiment. The example will be described below refe rr ing …
FIG. 4 is a diagram depicting a cross-section of a field effect transistor utilizing graphene on a substrate according to the present embodiment; 10 H G. 5 A is …
FIG. 6A is a plan view illustrating line-shaped graphene and the growing 30 direction thereof. The example will be described below refe rr ing to the figure. …
FIG. 7B), and further the metallic layer 504 is formed (FI G. 7C). As described above, it is possible that the order of formation of the carbon layer 502 and …
FIG. 8G is a diagram illustrating a process of a production method for a graphene device; 20
FIG. 9G is a diagram illustrating a process of a production method for a graphene device; 12 FI G. 9 H is a diagram illustrating a process of a production …
FIG. 11 D is a diagram illustrating a process of a production method for a graphene 20 device;
FIG. 12A is a diagram illustrating a process of a production method for a graphene 13 device; H G. 12B is a diagram illustrating a process of a production …
FIG. 13A is a graph showing a Raman spectrum in the event a solid solution layer 505 is formed and then quenched without etching, and FI G. 13B is a graph …
FIG. 14 is graphs showing features of Raman spectra for metallic layers 15 with various thicknesses, which are cooled after annealing, after etching for 3 m …
FIG. 15 A is a diagram showing an atomic force microscope image of patterned graphene 102 produced according to parameters A. FI G. 15B is a diagram showing an …
FIG. 16A is an enlarged view showing an atomic force microscope image of patterned graphene 102 produced according to the parameters B, and FI G. 16B is a 25 …
FIG. 17 is a diagram illustrating a process of a production direction for a graphene device 14 according to the present embodiment; H G. 18 is graphs showing …
FIG. 18 is graphs showing features of Raman spectra in the event a carbon layer 502 is formed on a metallic layer 504 and cooled after annealing, and after …
FIG. 19 is graphs showing features of Raman spectra co rr esponding to 48 heating temperatures. The example will be described below referring to the figure. …
FIG. 20 is a graph showing features of a Raman spectrum of a sample prepared by a mode performing reduction of a metal oxide in forming a solid solution layer. …
FIG. 21 is a scanning electron microscope picture showing final features of a graphene crystal when the hydrogen partial pressu m is 1 To rr. FI G. 22 is a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A production method for graphene comprising: a forming step for conducting heating to a solid solution temperature at which a solid solution of carbon dissolved in a metal is able to be formed, and forming a solid solution layer comprising the solid solution on a substrate, the solid solution layer comprising a metal in a solid state dissolving carbon, by heating to a solid solution temperature; and a removing step for growing the graphene made out of carbon precipitating from the solid solution la y er, by supplying an etching gas to remove removing the metal from the solid solution layer while maintaining the heating to the solid solution temperature.
The production method according to Claim 1, wherein in the forming step, a reducing agent that is able to reduce an oxide of the metal is supplied; and in the removing step, the metal contained in the solid solution layer is removed by supplying an etching gas.
The production method according to Claim 1, wherein a concentration distribution in a direction parallel to a surface of the substrate among concentration distributions of the carbon in the solid solution layer is made inhomogeneous, so as to grow the graphene in the direction parallel to the surface of the substrate.
. canceled
. canceled
. canceled
. canceled
Materials described outside the worked examples.
graphene
metal (solvent for solid solution)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a diagram depicting a cross-section of a field effect transistor utilizing graphene on a substrate according to the present embodiment; 10 H G. 5 A is …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 600–1000 °C | — |
Thickness | 25–35 nm |
Related documents with shared materials, methods, properties, or citations.
carbon
C
chlorine (etching gas)
Cl₂
silicon dioxide substrate
SiO₂
iron
Fe
nickel
Ni
cobalt
Co
silicon substrate with silicon dioxide layer
solid solution layer (carbon dissolved in metal)
FIG. 13A is a graph showing a Raman spectrum in the event a solid solution layer 505 is formed and then quenched without etching, and FI G. 13B is a graph …
FIG. 13A is a graph showing a Raman spectrum in the event a solid solution layer 505 is formed and then quenched without etching, and FI G. 13B is a graph …
FIG. 13A is a graph showing a Raman spectrum in the event a solid solution layer 505 is formed and then quenched without etching, and FI G. 13B is a graph …
FIG. 14 is graphs showing features of Raman spectra for metallic layers 15 with various thicknesses, which are cooled after annealing, after etching for 3 m …
FIG. 15 A is a diagram showing an atomic force microscope image of patterned graphene 102 produced according to parameters A. FI G. 15B is a diagram showing an …
FIG. 16A is an enlarged view showing an atomic force microscope image of patterned graphene 102 produced according to the parameters B, and FI G. 16B is a 25 …
FIG. 16A is an enlarged view showing an atomic force microscope image of patterned graphene 102 produced according to the parameters B, and FI G. 16B is a 25 …
FIG. 17 is a diagram illustrating a process of a production direction for a graphene device 14 according to the present embodiment; H G. 18 is graphs showing …
FIG. 18 is graphs showing features of Raman spectra in the event a carbon layer 502 is formed on a metallic layer 504 and cooled after annealing, and after …
FIG. 19 is graphs showing features of Raman spectra co rr esponding to 48 heating temperatures. The example will be described below referring to the figure. …
FIG. 20 is a graph showing features of a Raman spectrum of a sample prepared by a mode performing reduction of a metal oxide in forming a solid solution layer. …
FIG. 20 is a graph showing features of a Raman spectrum of a sample prepared by a mode performing reduction of a metal oxide in forming a solid solution layer. …
FIG. 21 is a scanning electron microscope picture showing final features of a graphene crystal when the hydrogen partial pressu m is 1 To rr. FI G. 22 is a …
| — |
Thickness | 1–3000 cm | — |
carbon
C
chlorine (etching gas)
Cl₂
silicon dioxide substrate
SiO₂
iron
Fe
nickel
Ni
cobalt
Co
silicon substrate with silicon dioxide layer
solid solution layer (carbon dissolved in metal)
FIG. 13A is a graph showing a Raman spectrum in the event a solid solution layer 505 is formed and then quenched without etching, and FI G. 13B is a graph …
FIG. 13A is a graph showing a Raman spectrum in the event a solid solution layer 505 is formed and then quenched without etching, and FI G. 13B is a graph …
FIG. 13A is a graph showing a Raman spectrum in the event a solid solution layer 505 is formed and then quenched without etching, and FI G. 13B is a graph …
FIG. 14 is graphs showing features of Raman spectra for metallic layers 15 with various thicknesses, which are cooled after annealing, after etching for 3 m …
FIG. 15 A is a diagram showing an atomic force microscope image of patterned graphene 102 produced according to parameters A. FI G. 15B is a diagram showing an …
FIG. 16A is an enlarged view showing an atomic force microscope image of patterned graphene 102 produced according to the parameters B, and FI G. 16B is a 25 …
FIG. 16A is an enlarged view showing an atomic force microscope image of patterned graphene 102 produced according to the parameters B, and FI G. 16B is a 25 …
FIG. 17 is a diagram illustrating a process of a production direction for a graphene device 14 according to the present embodiment; H G. 18 is graphs showing …
FIG. 18 is graphs showing features of Raman spectra in the event a carbon layer 502 is formed on a metallic layer 504 and cooled after annealing, and after …
FIG. 19 is graphs showing features of Raman spectra co rr esponding to 48 heating temperatures. The example will be described below referring to the figure. …
FIG. 20 is a graph showing features of a Raman spectrum of a sample prepared by a mode performing reduction of a metal oxide in forming a solid solution layer. …
FIG. 20 is a graph showing features of a Raman spectrum of a sample prepared by a mode performing reduction of a metal oxide in forming a solid solution layer. …
FIG. 21 is a scanning electron microscope picture showing final features of a graphene crystal when the hydrogen partial pressu m is 1 To rr. FI G. 22 is a …
| — |
Thickness | 1–3000 cm | — |
carbon
C
chlorine (etching gas)
Cl₂
silicon dioxide substrate
SiO₂
iron
Fe
nickel
Ni
cobalt
Co
silicon substrate with silicon dioxide layer
solid solution layer (carbon dissolved in metal)
FIG. 13A is a graph showing a Raman spectrum in the event a solid solution layer 505 is formed and then quenched without etching, and FI G. 13B is a graph …
FIG. 13A is a graph showing a Raman spectrum in the event a solid solution layer 505 is formed and then quenched without etching, and FI G. 13B is a graph …
FIG. 13A is a graph showing a Raman spectrum in the event a solid solution layer 505 is formed and then quenched without etching, and FI G. 13B is a graph …
FIG. 14 is graphs showing features of Raman spectra for metallic layers 15 with various thicknesses, which are cooled after annealing, after etching for 3 m …
FIG. 15 A is a diagram showing an atomic force microscope image of patterned graphene 102 produced according to parameters A. FI G. 15B is a diagram showing an …
FIG. 16A is an enlarged view showing an atomic force microscope image of patterned graphene 102 produced according to the parameters B, and FI G. 16B is a 25 …
FIG. 16A is an enlarged view showing an atomic force microscope image of patterned graphene 102 produced according to the parameters B, and FI G. 16B is a 25 …
FIG. 17 is a diagram illustrating a process of a production direction for a graphene device 14 according to the present embodiment; H G. 18 is graphs showing …
FIG. 18 is graphs showing features of Raman spectra in the event a carbon layer 502 is formed on a metallic layer 504 and cooled after annealing, and after …
FIG. 19 is graphs showing features of Raman spectra co rr esponding to 48 heating temperatures. The example will be described below referring to the figure. …
FIG. 20 is a graph showing features of a Raman spectrum of a sample prepared by a mode performing reduction of a metal oxide in forming a solid solution layer. …
FIG. 20 is a graph showing features of a Raman spectrum of a sample prepared by a mode performing reduction of a metal oxide in forming a solid solution layer. …
FIG. 21 is a scanning electron microscope picture showing final features of a graphene crystal when the hydrogen partial pressu m is 1 To rr. FI G. 22 is a …
| — |
Thickness | 1–3000 cm | — |
carbon
C
chlorine (etching gas)
Cl₂
silicon dioxide substrate
SiO₂
iron
Fe
nickel
Ni
cobalt
Co
silicon substrate with silicon dioxide layer
solid solution layer (carbon dissolved in metal)
FIG. 13A is a graph showing a Raman spectrum in the event a solid solution layer 505 is formed and then quenched without etching, and FI G. 13B is a graph …
FIG. 13A is a graph showing a Raman spectrum in the event a solid solution layer 505 is formed and then quenched without etching, and FI G. 13B is a graph …
FIG. 13A is a graph showing a Raman spectrum in the event a solid solution layer 505 is formed and then quenched without etching, and FI G. 13B is a graph …
FIG. 14 is graphs showing features of Raman spectra for metallic layers 15 with various thicknesses, which are cooled after annealing, after etching for 3 m …
FIG. 15 A is a diagram showing an atomic force microscope image of patterned graphene 102 produced according to parameters A. FI G. 15B is a diagram showing an …
FIG. 16A is an enlarged view showing an atomic force microscope image of patterned graphene 102 produced according to the parameters B, and FI G. 16B is a 25 …
FIG. 16A is an enlarged view showing an atomic force microscope image of patterned graphene 102 produced according to the parameters B, and FI G. 16B is a 25 …
FIG. 17 is a diagram illustrating a process of a production direction for a graphene device 14 according to the present embodiment; H G. 18 is graphs showing …
FIG. 18 is graphs showing features of Raman spectra in the event a carbon layer 502 is formed on a metallic layer 504 and cooled after annealing, and after …
FIG. 19 is graphs showing features of Raman spectra co rr esponding to 48 heating temperatures. The example will be described below referring to the figure. …
FIG. 20 is a graph showing features of a Raman spectrum of a sample prepared by a mode performing reduction of a metal oxide in forming a solid solution layer. …
FIG. 20 is a graph showing features of a Raman spectrum of a sample prepared by a mode performing reduction of a metal oxide in forming a solid solution layer. …
FIG. 21 is a scanning electron microscope picture showing final features of a graphene crystal when the hydrogen partial pressu m is 1 To rr. FI G. 22 is a …
| — |
Thickness | 1–3000 cm | — |