Patent
US 10,017,852METHOD FOR TREATING GRAPHENE SHEETS FOR LARGE-SCALE TRANSFER USING FREE-FLOAT METHOD
Scott E. Heise
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,017,852Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is a schematic, perspective view of a growth substrate used in the formation of a graphene sheet according to an embodiment of the present invention. …
FIG. 2, before the graphene sheet 20 is removed from the growth substrate 10, the graphene sheet 20 is prepared for transfer using a transfer preparation …
FIG. 3A. The etchant bath 30 allows the growth substrate 10 to be etched away such that a clean graphene sheet 20 remains. The etchant bath 30 may be any …
FIGS. 4 and 5 show images of a graphene sheet that was prepared for transfer by an embodiment of a transfer preparation apparatus configured to supply …
FIG. 5, the graphene sheet and functional substrate composite shows a graphene sheet that is free of visible, unintentional defects. While some defects may …
FIGS. 6 and 7 show SEM images of a prepared graphene sheet that was prepared for transfer by an embodiment of a transfer preparation apparatus configured to …
FIG. 7 is a detailed view of the SEM micrograph of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for transferring a graphene sheet from a copper substrate to a functional substrate comprising: forming the graphene sheet on the copper substrate using chemical vapor deposition; irradiating the graphene sheet formed on the copper substrate with a plurality of xenon ions using broad beam irradiation to form a prepared graphene shee t, wherein the prepared graphene-sheet-is -resistant-to -forming-unintentional- defects-induced- during-transfer- of the prepared graphene sheet to the functional substrate; removing the copper substrate from the prepared graphene sheet using an etchant bath; floating the prepared graphene sheet in a floating bath; submerging the functional substrate in the floating bath; and decreasing a fluid level of the floating bath to lower the prepared graphene sheet onto the functional substrate.
The method of claim 1, wherein the graphene sheet comprises an area of 1 cm 2 or larger.
The method of claim 1, wherein the broad beam irradiation is collimated.
The method of claim 1, wherein the plurality of xenon ions is applied at a voltage in a range of about 100 V to about 1500 V.
The method of claim 1, wherein the plurality of xenon ions is applied at a voltage in a range of about 250 V to about 750 V. -5- 4832-0096-1353.1 Atty. Dkt. No. 111423-1104
The method of claim 1, wherein the plurality of xenon ions is applied at a voltage of about 500 V.
The method of claim 1, further comprising heating the graphene sheet formed on the copper substrate to a temperature ranging from about 50 ° C to about 1 00°C.
The method of claim 1, further comprising heating the graphene sheet disposed on the copper substrate to a temperature of about 80 °C.
The method of claim 1, wherein the plurality of xenon ions is provided at a flux of about 6.24 x 10 11 Xe */cm 2/s to about 6.24 x 10 14 Xe*/cm 2/s.
The method of claim 1, wherein the plurality of xenon ions is provided at a flux of about 6.24 x 10 1 2 Xe*/cm 2/s to about 6.24 x 10 13 Xe*/cm 2/s.
The method of claim 1, wherein the plurality of xenon ions is provided at a flux of about 3.75 x 10 13 Xe+/cm 2/s.
The method of claim 1, wherein the graphene sheet formed on the copper substrate is irradiated with the plurality of xenon ions for a contact time resulting in a total fluence of about 6.24 x 10 12 Xe+/cm 2 to about 2.5 x 10 13 Xe+/cm 2.
The method of claim 1, wherein the graphene sheet formed on the copper substrate is irradiated with the plurality of xenon ions for a contact time resulting in a total fluence of about 1.25 x 10 1 3 Xe*/cm 2.
A method for transferring a graphene sheet from a copper substrate to a functional substrate comprising: forming the graphene sheet on the copper substrate using chemical vapor deposition; -6- 4832-0096-1353.1 Atty. Dkt. No. 111423-1104 irradiating the graphene sheet formed on the copper substrate with a plurality of neon ions using broad beam irradiation to form a prepared graphene shee t, wherein the prepared graphene sheet is resistant to forming unintentional defects induced during transfer of the prepared graphene sheet to the functional substrate; removing the copper substrate from the prepared graphene sheet using an etchant bath; floating the prepared graphene sheet in a floating bath; submerging the functional substrate in the floating bath; and decreasing a fluid level of the floating bath to lower the prepared graphene sheet onto the functional substrate.
The method of claim 14, further comprising heating the graphene sheet formed on the copper substrate to a temperature of about 50 * C to about 1 00°C.
The method of claim 14, wherein the graphene sheet formed on the copper substrate is irradiated with the plurality of neon ions for a contact time resulting in a total fluence of about 6.24 x 10 1 2 ions/cm 2 to about 7.5 x 1013 ions/cm 2.
The method of claim 14, wherein the graphene sheet formed on the copper substrate is irradiated with the plurality of neon ions for a contact time resulting in a total fluence of up to 2 x 10 1 4 ions/cm 2.
A method for transferring a graphene sheet from a growth substrate to a functional substrate comprising: forming the graphene sheet on the growth substrate; irradiating the graphene sheet formed on the growth substrate with a plurality of ions to form a prepared graphene shee t, wherein the prepared graphene sheet is resistant to forming unintentional defects induced during transfer of the prepared graphene sheet to the functional substrate; removing the growth substrate from the prepared graphene sheet using an etchant bath; -7- 4832-0096-1353.1 Atty. Dkt. No. 111423-1104 floating the prepared graphene sheet in a floating bath; submerging the functional substrate in the floating bath; and decreasing a fluid level of the floating bath to lower the prepared graphene sheet onto the functional substrate.
The method of claim 18, wherein the graphene sheet comprises an area of 1 cm 2 or larger.
The method of claim 18, wherein the growth substrate is a copper substrate.
The method of claim 18, wherein the growth substrate is a nickel substrate.
The method of claim 18, wherein the plurality of ions comprises noble gas ions.
The method of claim 18, wherein the plurality of ions is applied to the graphene sheet formed on the growth substrate using broad beam irradiation.
The method of claim 18, wherein the plurality of ions is applied to the graphene sheet formed on the growth substrate at a voltage of about 100 V to about 1500 V.
The method of claim 18, wherein the plurality of ions is applied at a flux of about 1 nA/mn 2 to about 1000 nA/mm 2.
The method of claim 18, wherein the plurality of ions is applied at a flux SVG 15099464.05-31-2017.J₃DFCKLGRXEAPX1.CLM.5.11.1059.1529.1162.1576.svg 0.157 0.343 Chemistry Black and white of about 10 nA/mm 2 to about 100 nA/
The method of claim 18, wherein the plurality of ions is applied at a flux SVG 15099464.05-31-2017.J₃DFCKLGRXEAPX1.CLM.5.13.1034.1792.1137.1839.svg 0.157 0.343 Chemistry Black and white of about 40 nA/mm 2 to about 80 nA/
The method of claim 18, wherein the plurality of ions is applied at a flux of about 60 nA/mm
The method of claim 18, wherein the graphene sheet formed on the growth substrate is irradiated with the plurality of ions for a contact time resulting in a total fluence of about 10 nAs/m m 2 to about 120 nAs/mn 2.
The method of claim 18, wherein the graphene sheet formed on the growth substrate is irradiated with the plurality of ions for a contact time resulting in a total fluence of about 10 nAs/m m 2 to about 40 nAs/mn 2. -9- 4832-0096-1353.1 Atty. Dkt. No. 111423-1104
The method of claim 18, wherein the graphene sheet formed on the growth substrate is irradiated with the plurality of ions for a contact time resulting in a total fluence of about 20 nAs/mm 2. -10- 4832-0096-1353.1
Materials described outside the worked examples.
graphene sheet
C
xenon ions
Xe+
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 6 and 7 show SEM images of a prepared graphene sheet that was prepared for transfer by an embodiment of a transfer preparation apparatus configured to …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | 100–1500 V | — |
Voltage |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,017,852Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is a schematic, perspective view of a growth substrate used in the formation of a graphene sheet according to an embodiment of the present invention. …
FIG. 2, before the graphene sheet 20 is removed from the growth substrate 10, the graphene sheet 20 is prepared for transfer using a transfer preparation …
FIG. 3A. The etchant bath 30 allows the growth substrate 10 to be etched away such that a clean graphene sheet 20 remains. The etchant bath 30 may be any …
FIGS. 4 and 5 show images of a graphene sheet that was prepared for transfer by an embodiment of a transfer preparation apparatus configured to supply …
FIG. 5, the graphene sheet and functional substrate composite shows a graphene sheet that is free of visible, unintentional defects. While some defects may …
FIGS. 6 and 7 show SEM images of a prepared graphene sheet that was prepared for transfer by an embodiment of a transfer preparation apparatus configured to …
FIG. 7 is a detailed view of the SEM micrograph of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for transferring a graphene sheet from a copper substrate to a functional substrate comprising: forming the graphene sheet on the copper substrate using chemical vapor deposition; irradiating the graphene sheet formed on the copper substrate with a plurality of xenon ions using broad beam irradiation to form a prepared graphene shee t, wherein the prepared graphene-sheet-is -resistant-to -forming-unintentional- defects-induced- during-transfer- of the prepared graphene sheet to the functional substrate; removing the copper substrate from the prepared graphene sheet using an etchant bath; floating the prepared graphene sheet in a floating bath; submerging the functional substrate in the floating bath; and decreasing a fluid level of the floating bath to lower the prepared graphene sheet onto the functional substrate.
The method of claim 1, wherein the graphene sheet comprises an area of 1 cm 2 or larger.
The method of claim 1, wherein the broad beam irradiation is collimated.
The method of claim 1, wherein the plurality of xenon ions is applied at a voltage in a range of about 100 V to about 1500 V.
The method of claim 1, wherein the plurality of xenon ions is applied at a voltage in a range of about 250 V to about 750 V. -5- 4832-0096-1353.1 Atty. Dkt. No. 111423-1104
The method of claim 1, wherein the plurality of xenon ions is applied at a voltage of about 500 V.
The method of claim 1, further comprising heating the graphene sheet formed on the copper substrate to a temperature ranging from about 50 ° C to about 1 00°C.
The method of claim 1, further comprising heating the graphene sheet disposed on the copper substrate to a temperature of about 80 °C.
The method of claim 1, wherein the plurality of xenon ions is provided at a flux of about 6.24 x 10 11 Xe */cm 2/s to about 6.24 x 10 14 Xe*/cm 2/s.
The method of claim 1, wherein the plurality of xenon ions is provided at a flux of about 6.24 x 10 1 2 Xe*/cm 2/s to about 6.24 x 10 13 Xe*/cm 2/s.
The method of claim 1, wherein the plurality of xenon ions is provided at a flux of about 3.75 x 10 13 Xe+/cm 2/s.
The method of claim 1, wherein the graphene sheet formed on the copper substrate is irradiated with the plurality of xenon ions for a contact time resulting in a total fluence of about 6.24 x 10 12 Xe+/cm 2 to about 2.5 x 10 13 Xe+/cm 2.
The method of claim 1, wherein the graphene sheet formed on the copper substrate is irradiated with the plurality of xenon ions for a contact time resulting in a total fluence of about 1.25 x 10 1 3 Xe*/cm 2.
A method for transferring a graphene sheet from a copper substrate to a functional substrate comprising: forming the graphene sheet on the copper substrate using chemical vapor deposition; -6- 4832-0096-1353.1 Atty. Dkt. No. 111423-1104 irradiating the graphene sheet formed on the copper substrate with a plurality of neon ions using broad beam irradiation to form a prepared graphene shee t, wherein the prepared graphene sheet is resistant to forming unintentional defects induced during transfer of the prepared graphene sheet to the functional substrate; removing the copper substrate from the prepared graphene sheet using an etchant bath; floating the prepared graphene sheet in a floating bath; submerging the functional substrate in the floating bath; and decreasing a fluid level of the floating bath to lower the prepared graphene sheet onto the functional substrate.
The method of claim 14, further comprising heating the graphene sheet formed on the copper substrate to a temperature of about 50 * C to about 1 00°C.
The method of claim 14, wherein the graphene sheet formed on the copper substrate is irradiated with the plurality of neon ions for a contact time resulting in a total fluence of about 6.24 x 10 1 2 ions/cm 2 to about 7.5 x 1013 ions/cm 2.
The method of claim 14, wherein the graphene sheet formed on the copper substrate is irradiated with the plurality of neon ions for a contact time resulting in a total fluence of up to 2 x 10 1 4 ions/cm 2.
A method for transferring a graphene sheet from a growth substrate to a functional substrate comprising: forming the graphene sheet on the growth substrate; irradiating the graphene sheet formed on the growth substrate with a plurality of ions to form a prepared graphene shee t, wherein the prepared graphene sheet is resistant to forming unintentional defects induced during transfer of the prepared graphene sheet to the functional substrate; removing the growth substrate from the prepared graphene sheet using an etchant bath; -7- 4832-0096-1353.1 Atty. Dkt. No. 111423-1104 floating the prepared graphene sheet in a floating bath; submerging the functional substrate in the floating bath; and decreasing a fluid level of the floating bath to lower the prepared graphene sheet onto the functional substrate.
The method of claim 18, wherein the graphene sheet comprises an area of 1 cm 2 or larger.
The method of claim 18, wherein the growth substrate is a copper substrate.
The method of claim 18, wherein the growth substrate is a nickel substrate.
The method of claim 18, wherein the plurality of ions comprises noble gas ions.
The method of claim 18, wherein the plurality of ions is applied to the graphene sheet formed on the growth substrate using broad beam irradiation.
The method of claim 18, wherein the plurality of ions is applied to the graphene sheet formed on the growth substrate at a voltage of about 100 V to about 1500 V.
The method of claim 18, wherein the plurality of ions is applied at a flux of about 1 nA/mn 2 to about 1000 nA/mm 2.
The method of claim 18, wherein the plurality of ions is applied at a flux SVG 15099464.05-31-2017.J₃DFCKLGRXEAPX1.CLM.5.11.1059.1529.1162.1576.svg 0.157 0.343 Chemistry Black and white of about 10 nA/mm 2 to about 100 nA/
The method of claim 18, wherein the plurality of ions is applied at a flux SVG 15099464.05-31-2017.J₃DFCKLGRXEAPX1.CLM.5.13.1034.1792.1137.1839.svg 0.157 0.343 Chemistry Black and white of about 40 nA/mm 2 to about 80 nA/
The method of claim 18, wherein the plurality of ions is applied at a flux of about 60 nA/mm
The method of claim 18, wherein the graphene sheet formed on the growth substrate is irradiated with the plurality of ions for a contact time resulting in a total fluence of about 10 nAs/m m 2 to about 120 nAs/mn 2.
The method of claim 18, wherein the graphene sheet formed on the growth substrate is irradiated with the plurality of ions for a contact time resulting in a total fluence of about 10 nAs/m m 2 to about 40 nAs/mn 2. -9- 4832-0096-1353.1 Atty. Dkt. No. 111423-1104
The method of claim 18, wherein the graphene sheet formed on the growth substrate is irradiated with the plurality of ions for a contact time resulting in a total fluence of about 20 nAs/mm 2. -10- 4832-0096-1353.1
Materials described outside the worked examples.
graphene sheet
C
xenon ions
Xe+
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 6 and 7 show SEM images of a prepared graphene sheet that was prepared for transfer by an embodiment of a transfer preparation apparatus configured to …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | 100–1500 V | — |
Voltage |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,017,852Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is a schematic, perspective view of a growth substrate used in the formation of a graphene sheet according to an embodiment of the present invention. …
FIG. 2, before the graphene sheet 20 is removed from the growth substrate 10, the graphene sheet 20 is prepared for transfer using a transfer preparation …
FIG. 3A. The etchant bath 30 allows the growth substrate 10 to be etched away such that a clean graphene sheet 20 remains. The etchant bath 30 may be any …
FIGS. 4 and 5 show images of a graphene sheet that was prepared for transfer by an embodiment of a transfer preparation apparatus configured to supply …
FIG. 5, the graphene sheet and functional substrate composite shows a graphene sheet that is free of visible, unintentional defects. While some defects may …
FIGS. 6 and 7 show SEM images of a prepared graphene sheet that was prepared for transfer by an embodiment of a transfer preparation apparatus configured to …
FIG. 7 is a detailed view of the SEM micrograph of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for transferring a graphene sheet from a copper substrate to a functional substrate comprising: forming the graphene sheet on the copper substrate using chemical vapor deposition; irradiating the graphene sheet formed on the copper substrate with a plurality of xenon ions using broad beam irradiation to form a prepared graphene shee t, wherein the prepared graphene-sheet-is -resistant-to -forming-unintentional- defects-induced- during-transfer- of the prepared graphene sheet to the functional substrate; removing the copper substrate from the prepared graphene sheet using an etchant bath; floating the prepared graphene sheet in a floating bath; submerging the functional substrate in the floating bath; and decreasing a fluid level of the floating bath to lower the prepared graphene sheet onto the functional substrate.
The method of claim 1, wherein the graphene sheet comprises an area of 1 cm 2 or larger.
The method of claim 1, wherein the broad beam irradiation is collimated.
The method of claim 1, wherein the plurality of xenon ions is applied at a voltage in a range of about 100 V to about 1500 V.
The method of claim 1, wherein the plurality of xenon ions is applied at a voltage in a range of about 250 V to about 750 V. -5- 4832-0096-1353.1 Atty. Dkt. No. 111423-1104
The method of claim 1, wherein the plurality of xenon ions is applied at a voltage of about 500 V.
The method of claim 1, further comprising heating the graphene sheet formed on the copper substrate to a temperature ranging from about 50 ° C to about 1 00°C.
The method of claim 1, further comprising heating the graphene sheet disposed on the copper substrate to a temperature of about 80 °C.
The method of claim 1, wherein the plurality of xenon ions is provided at a flux of about 6.24 x 10 11 Xe */cm 2/s to about 6.24 x 10 14 Xe*/cm 2/s.
The method of claim 1, wherein the plurality of xenon ions is provided at a flux of about 6.24 x 10 1 2 Xe*/cm 2/s to about 6.24 x 10 13 Xe*/cm 2/s.
The method of claim 1, wherein the plurality of xenon ions is provided at a flux of about 3.75 x 10 13 Xe+/cm 2/s.
The method of claim 1, wherein the graphene sheet formed on the copper substrate is irradiated with the plurality of xenon ions for a contact time resulting in a total fluence of about 6.24 x 10 12 Xe+/cm 2 to about 2.5 x 10 13 Xe+/cm 2.
The method of claim 1, wherein the graphene sheet formed on the copper substrate is irradiated with the plurality of xenon ions for a contact time resulting in a total fluence of about 1.25 x 10 1 3 Xe*/cm 2.
A method for transferring a graphene sheet from a copper substrate to a functional substrate comprising: forming the graphene sheet on the copper substrate using chemical vapor deposition; -6- 4832-0096-1353.1 Atty. Dkt. No. 111423-1104 irradiating the graphene sheet formed on the copper substrate with a plurality of neon ions using broad beam irradiation to form a prepared graphene shee t, wherein the prepared graphene sheet is resistant to forming unintentional defects induced during transfer of the prepared graphene sheet to the functional substrate; removing the copper substrate from the prepared graphene sheet using an etchant bath; floating the prepared graphene sheet in a floating bath; submerging the functional substrate in the floating bath; and decreasing a fluid level of the floating bath to lower the prepared graphene sheet onto the functional substrate.
The method of claim 14, further comprising heating the graphene sheet formed on the copper substrate to a temperature of about 50 * C to about 1 00°C.
The method of claim 14, wherein the graphene sheet formed on the copper substrate is irradiated with the plurality of neon ions for a contact time resulting in a total fluence of about 6.24 x 10 1 2 ions/cm 2 to about 7.5 x 1013 ions/cm 2.
The method of claim 14, wherein the graphene sheet formed on the copper substrate is irradiated with the plurality of neon ions for a contact time resulting in a total fluence of up to 2 x 10 1 4 ions/cm 2.
A method for transferring a graphene sheet from a growth substrate to a functional substrate comprising: forming the graphene sheet on the growth substrate; irradiating the graphene sheet formed on the growth substrate with a plurality of ions to form a prepared graphene shee t, wherein the prepared graphene sheet is resistant to forming unintentional defects induced during transfer of the prepared graphene sheet to the functional substrate; removing the growth substrate from the prepared graphene sheet using an etchant bath; -7- 4832-0096-1353.1 Atty. Dkt. No. 111423-1104 floating the prepared graphene sheet in a floating bath; submerging the functional substrate in the floating bath; and decreasing a fluid level of the floating bath to lower the prepared graphene sheet onto the functional substrate.
The method of claim 18, wherein the graphene sheet comprises an area of 1 cm 2 or larger.
The method of claim 18, wherein the growth substrate is a copper substrate.
The method of claim 18, wherein the growth substrate is a nickel substrate.
The method of claim 18, wherein the plurality of ions comprises noble gas ions.
The method of claim 18, wherein the plurality of ions is applied to the graphene sheet formed on the growth substrate using broad beam irradiation.
The method of claim 18, wherein the plurality of ions is applied to the graphene sheet formed on the growth substrate at a voltage of about 100 V to about 1500 V.
The method of claim 18, wherein the plurality of ions is applied at a flux of about 1 nA/mn 2 to about 1000 nA/mm 2.
The method of claim 18, wherein the plurality of ions is applied at a flux SVG 15099464.05-31-2017.J₃DFCKLGRXEAPX1.CLM.5.11.1059.1529.1162.1576.svg 0.157 0.343 Chemistry Black and white of about 10 nA/mm 2 to about 100 nA/
The method of claim 18, wherein the plurality of ions is applied at a flux SVG 15099464.05-31-2017.J₃DFCKLGRXEAPX1.CLM.5.13.1034.1792.1137.1839.svg 0.157 0.343 Chemistry Black and white of about 40 nA/mm 2 to about 80 nA/
The method of claim 18, wherein the plurality of ions is applied at a flux of about 60 nA/mm
The method of claim 18, wherein the graphene sheet formed on the growth substrate is irradiated with the plurality of ions for a contact time resulting in a total fluence of about 10 nAs/m m 2 to about 120 nAs/mn 2.
The method of claim 18, wherein the graphene sheet formed on the growth substrate is irradiated with the plurality of ions for a contact time resulting in a total fluence of about 10 nAs/m m 2 to about 40 nAs/mn 2. -9- 4832-0096-1353.1 Atty. Dkt. No. 111423-1104
The method of claim 18, wherein the graphene sheet formed on the growth substrate is irradiated with the plurality of ions for a contact time resulting in a total fluence of about 20 nAs/mm 2. -10- 4832-0096-1353.1
Materials described outside the worked examples.
graphene sheet
C
xenon ions
Xe+
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 6 and 7 show SEM images of a prepared graphene sheet that was prepared for transfer by an embodiment of a transfer preparation apparatus configured to …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | 100–1500 V | — |
Voltage |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,017,852Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is a schematic, perspective view of a growth substrate used in the formation of a graphene sheet according to an embodiment of the present invention. …
FIG. 2, before the graphene sheet 20 is removed from the growth substrate 10, the graphene sheet 20 is prepared for transfer using a transfer preparation …
FIG. 3A. The etchant bath 30 allows the growth substrate 10 to be etched away such that a clean graphene sheet 20 remains. The etchant bath 30 may be any …
FIGS. 4 and 5 show images of a graphene sheet that was prepared for transfer by an embodiment of a transfer preparation apparatus configured to supply …
FIG. 5, the graphene sheet and functional substrate composite shows a graphene sheet that is free of visible, unintentional defects. While some defects may …
FIGS. 6 and 7 show SEM images of a prepared graphene sheet that was prepared for transfer by an embodiment of a transfer preparation apparatus configured to …
FIG. 7 is a detailed view of the SEM micrograph of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for transferring a graphene sheet from a copper substrate to a functional substrate comprising: forming the graphene sheet on the copper substrate using chemical vapor deposition; irradiating the graphene sheet formed on the copper substrate with a plurality of xenon ions using broad beam irradiation to form a prepared graphene shee t, wherein the prepared graphene-sheet-is -resistant-to -forming-unintentional- defects-induced- during-transfer- of the prepared graphene sheet to the functional substrate; removing the copper substrate from the prepared graphene sheet using an etchant bath; floating the prepared graphene sheet in a floating bath; submerging the functional substrate in the floating bath; and decreasing a fluid level of the floating bath to lower the prepared graphene sheet onto the functional substrate.
The method of claim 1, wherein the graphene sheet comprises an area of 1 cm 2 or larger.
The method of claim 1, wherein the broad beam irradiation is collimated.
The method of claim 1, wherein the plurality of xenon ions is applied at a voltage in a range of about 100 V to about 1500 V.
The method of claim 1, wherein the plurality of xenon ions is applied at a voltage in a range of about 250 V to about 750 V. -5- 4832-0096-1353.1 Atty. Dkt. No. 111423-1104
The method of claim 1, wherein the plurality of xenon ions is applied at a voltage of about 500 V.
The method of claim 1, further comprising heating the graphene sheet formed on the copper substrate to a temperature ranging from about 50 ° C to about 1 00°C.
The method of claim 1, further comprising heating the graphene sheet disposed on the copper substrate to a temperature of about 80 °C.
The method of claim 1, wherein the plurality of xenon ions is provided at a flux of about 6.24 x 10 11 Xe */cm 2/s to about 6.24 x 10 14 Xe*/cm 2/s.
The method of claim 1, wherein the plurality of xenon ions is provided at a flux of about 6.24 x 10 1 2 Xe*/cm 2/s to about 6.24 x 10 13 Xe*/cm 2/s.
The method of claim 1, wherein the plurality of xenon ions is provided at a flux of about 3.75 x 10 13 Xe+/cm 2/s.
The method of claim 1, wherein the graphene sheet formed on the copper substrate is irradiated with the plurality of xenon ions for a contact time resulting in a total fluence of about 6.24 x 10 12 Xe+/cm 2 to about 2.5 x 10 13 Xe+/cm 2.
The method of claim 1, wherein the graphene sheet formed on the copper substrate is irradiated with the plurality of xenon ions for a contact time resulting in a total fluence of about 1.25 x 10 1 3 Xe*/cm 2.
A method for transferring a graphene sheet from a copper substrate to a functional substrate comprising: forming the graphene sheet on the copper substrate using chemical vapor deposition; -6- 4832-0096-1353.1 Atty. Dkt. No. 111423-1104 irradiating the graphene sheet formed on the copper substrate with a plurality of neon ions using broad beam irradiation to form a prepared graphene shee t, wherein the prepared graphene sheet is resistant to forming unintentional defects induced during transfer of the prepared graphene sheet to the functional substrate; removing the copper substrate from the prepared graphene sheet using an etchant bath; floating the prepared graphene sheet in a floating bath; submerging the functional substrate in the floating bath; and decreasing a fluid level of the floating bath to lower the prepared graphene sheet onto the functional substrate.
The method of claim 14, further comprising heating the graphene sheet formed on the copper substrate to a temperature of about 50 * C to about 1 00°C.
The method of claim 14, wherein the graphene sheet formed on the copper substrate is irradiated with the plurality of neon ions for a contact time resulting in a total fluence of about 6.24 x 10 1 2 ions/cm 2 to about 7.5 x 1013 ions/cm 2.
The method of claim 14, wherein the graphene sheet formed on the copper substrate is irradiated with the plurality of neon ions for a contact time resulting in a total fluence of up to 2 x 10 1 4 ions/cm 2.
A method for transferring a graphene sheet from a growth substrate to a functional substrate comprising: forming the graphene sheet on the growth substrate; irradiating the graphene sheet formed on the growth substrate with a plurality of ions to form a prepared graphene shee t, wherein the prepared graphene sheet is resistant to forming unintentional defects induced during transfer of the prepared graphene sheet to the functional substrate; removing the growth substrate from the prepared graphene sheet using an etchant bath; -7- 4832-0096-1353.1 Atty. Dkt. No. 111423-1104 floating the prepared graphene sheet in a floating bath; submerging the functional substrate in the floating bath; and decreasing a fluid level of the floating bath to lower the prepared graphene sheet onto the functional substrate.
The method of claim 18, wherein the graphene sheet comprises an area of 1 cm 2 or larger.
The method of claim 18, wherein the growth substrate is a copper substrate.
The method of claim 18, wherein the growth substrate is a nickel substrate.
The method of claim 18, wherein the plurality of ions comprises noble gas ions.
The method of claim 18, wherein the plurality of ions is applied to the graphene sheet formed on the growth substrate using broad beam irradiation.
The method of claim 18, wherein the plurality of ions is applied to the graphene sheet formed on the growth substrate at a voltage of about 100 V to about 1500 V.
The method of claim 18, wherein the plurality of ions is applied at a flux of about 1 nA/mn 2 to about 1000 nA/mm 2.
The method of claim 18, wherein the plurality of ions is applied at a flux SVG 15099464.05-31-2017.J₃DFCKLGRXEAPX1.CLM.5.11.1059.1529.1162.1576.svg 0.157 0.343 Chemistry Black and white of about 10 nA/mm 2 to about 100 nA/
The method of claim 18, wherein the plurality of ions is applied at a flux SVG 15099464.05-31-2017.J₃DFCKLGRXEAPX1.CLM.5.13.1034.1792.1137.1839.svg 0.157 0.343 Chemistry Black and white of about 40 nA/mm 2 to about 80 nA/
The method of claim 18, wherein the plurality of ions is applied at a flux of about 60 nA/mm
The method of claim 18, wherein the graphene sheet formed on the growth substrate is irradiated with the plurality of ions for a contact time resulting in a total fluence of about 10 nAs/m m 2 to about 120 nAs/mn 2.
The method of claim 18, wherein the graphene sheet formed on the growth substrate is irradiated with the plurality of ions for a contact time resulting in a total fluence of about 10 nAs/m m 2 to about 40 nAs/mn 2. -9- 4832-0096-1353.1 Atty. Dkt. No. 111423-1104
The method of claim 18, wherein the graphene sheet formed on the growth substrate is irradiated with the plurality of ions for a contact time resulting in a total fluence of about 20 nAs/mm 2. -10- 4832-0096-1353.1
Materials described outside the worked examples.
graphene sheet
C
xenon ions
Xe+
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 6 and 7 show SEM images of a prepared graphene sheet that was prepared for transfer by an embodiment of a transfer preparation apparatus configured to …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | 100–1500 V | — |
Voltage |
Related documents with shared materials, methods, properties, or citations.
copper substrate
Cu
neon ions
Ne+
growth substrate (generic)
nickel substrate
Ni
noble gas ions
argon ions
Ar+
| — |
Thickness | 350–450 nm | — |
Thickness | ≥ 1 cm | — |
copper substrate
Cu
neon ions
Ne+
growth substrate (generic)
nickel substrate
Ni
noble gas ions
argon ions
Ar+
| — |
Thickness | 350–450 nm | — |
Thickness | ≥ 1 cm | — |
copper substrate
Cu
neon ions
Ne+
growth substrate (generic)
nickel substrate
Ni
noble gas ions
argon ions
Ar+
| — |
Thickness | 350–450 nm | — |
Thickness | ≥ 1 cm | — |
copper substrate
Cu
neon ions
Ne+
growth substrate (generic)
nickel substrate
Ni
noble gas ions
argon ions
Ar+
| — |
Thickness | 350–450 nm | — |
Thickness | ≥ 1 cm | — |