Patent
US 9,761,669SEED-MEDIATED GROWTH OF PATTERNED GRAPHENE NANORIBBON ARRAYS
Michael Scott Arnold
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,761,669Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B. Schematic illustration of a graphene nanoribbon growing anisotropically from a graphene seed particle on the (001) facet of a substrate. The armchair …
FIG. 2. Schematic illustration of a regular rectangular pattern of graphene nanoribbons on a substrate. The circles represent graphene seed particles and the …
FIG. 3. Schematic illustration of a graphene nanoribbon with armchair edges perfectly aligned along the Ge [110] direction (upper nanoribbon) and a graphene …
FIG. 4A. Scanning electron microscope image of a graphene nanoribbon array made by graphene seed-mediated chemical vapor deposition growth on a Ge (001) …
FIG. 5. Scanning electron microscope image of an array of graphene crystal structures, including graphene crosses and graphene nanoribbons, as well as other …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene nanoribbon array comprising: a semiconductor substrate having a (001) facet; and a plurality of graphene nanoribbons on the (001) facet of the semiconductor substrate; wherein the graphene nanoribbons have aspect ratios of at least 4; and further wherein the graphene nanoribbons have an armchair crystallographic direction of graphene running all the way along their long axes and an armchair configuration along their edges, and further wherein at least percent of the graphene nanoribbons have their long axis oriented along a single [110] direction of the semiconductor substrate.
The graphene nanoribbon array of claim 1, wherein at least 80 percent of the graphene nanoribbons have their long axis oriented along a single [110] direction of the semiconductor substrate.
The graphene nanoribbon array of claim 1, wherein the at least 60 percent of the graphene nanoribbons have their long axes rotated by no more than + 150 from the [110] direction of the semiconductor substrate.
The graphene nanoribbon array of claim 1, wherein the at least 80 percent of the graphene nanoribbons have their long axes rotated by no more than + 5° from the [110] direction of the semiconductor substrate.
The graphene nanoribbon array of claim 1, wherein the semiconductor substrate having a (001) facet is a germanium substrate.
The graphene nanoribbon array of claim 1, wherein the semiconductor substrate having a (001) facet is a III -V semiconductor substrate.
The array of claim 1, wherein the graphene nanoribbons having their long axes oriented along a single [1 10] direction of the semiconductor are arranged in a regular pattern.
The array of claim 1, wherein the average width of the graphene nanoribbons in the array is no greater than 50 nm.
Atty. Dkt. No.: 00300-0276
The method of claim 15, further comprising incorporating the graphene nanoribbons and the semiconductor substrate into an electronic or photonic device.
The method of claim 15, further comprising releasing at least a portion of the graphene nanoribbons from the semiconductor substrate and transferring the released graphene nanoribbons to a second substrate. 21
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials3 process steps
Graphene is grown in a single crystallographic orientation on Cu(111) sheet-growth substrate by CVD, then transferred to the (001) facet of a semiconductor substrate (e.g., Ge) using either a dry transfer method (PMMA/Au bilayer host substrate) or a wet transfer method (PMMA host substrate). Seeds are then patterned from the transferred graphene sheet by high-resolution lithography (e.g., electron beam lithography) with the armchair direction aligned along the [110] direction of the (001) facet. Graphene nanoribbons are grown from the seeds by CVD using methane and hydrogen gases at partial pressures selected for highly anisotropic growth.
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanoribbon array
electronic or photonic device incorporating graphene nanoribbons
Materials described outside the worked examples.
III-V semiconductor substrate
amorphous carbon seed
methane
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4A. Scanning electron microscope image of a graphene nanoribbon array made by graphene seed-mediated chemical vapor deposition growth on a Ge (001) …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.000001 torr | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,761,669Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B. Schematic illustration of a graphene nanoribbon growing anisotropically from a graphene seed particle on the (001) facet of a substrate. The armchair …
FIG. 2. Schematic illustration of a regular rectangular pattern of graphene nanoribbons on a substrate. The circles represent graphene seed particles and the …
FIG. 3. Schematic illustration of a graphene nanoribbon with armchair edges perfectly aligned along the Ge [110] direction (upper nanoribbon) and a graphene …
FIG. 4A. Scanning electron microscope image of a graphene nanoribbon array made by graphene seed-mediated chemical vapor deposition growth on a Ge (001) …
FIG. 5. Scanning electron microscope image of an array of graphene crystal structures, including graphene crosses and graphene nanoribbons, as well as other …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene nanoribbon array comprising: a semiconductor substrate having a (001) facet; and a plurality of graphene nanoribbons on the (001) facet of the semiconductor substrate; wherein the graphene nanoribbons have aspect ratios of at least 4; and further wherein the graphene nanoribbons have an armchair crystallographic direction of graphene running all the way along their long axes and an armchair configuration along their edges, and further wherein at least percent of the graphene nanoribbons have their long axis oriented along a single [110] direction of the semiconductor substrate.
The graphene nanoribbon array of claim 1, wherein at least 80 percent of the graphene nanoribbons have their long axis oriented along a single [110] direction of the semiconductor substrate.
The graphene nanoribbon array of claim 1, wherein the at least 60 percent of the graphene nanoribbons have their long axes rotated by no more than + 150 from the [110] direction of the semiconductor substrate.
The graphene nanoribbon array of claim 1, wherein the at least 80 percent of the graphene nanoribbons have their long axes rotated by no more than + 5° from the [110] direction of the semiconductor substrate.
The graphene nanoribbon array of claim 1, wherein the semiconductor substrate having a (001) facet is a germanium substrate.
The graphene nanoribbon array of claim 1, wherein the semiconductor substrate having a (001) facet is a III -V semiconductor substrate.
The array of claim 1, wherein the graphene nanoribbons having their long axes oriented along a single [1 10] direction of the semiconductor are arranged in a regular pattern.
The array of claim 1, wherein the average width of the graphene nanoribbons in the array is no greater than 50 nm.
Atty. Dkt. No.: 00300-0276
The method of claim 15, further comprising incorporating the graphene nanoribbons and the semiconductor substrate into an electronic or photonic device.
The method of claim 15, further comprising releasing at least a portion of the graphene nanoribbons from the semiconductor substrate and transferring the released graphene nanoribbons to a second substrate. 21
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials3 process steps
Graphene is grown in a single crystallographic orientation on Cu(111) sheet-growth substrate by CVD, then transferred to the (001) facet of a semiconductor substrate (e.g., Ge) using either a dry transfer method (PMMA/Au bilayer host substrate) or a wet transfer method (PMMA host substrate). Seeds are then patterned from the transferred graphene sheet by high-resolution lithography (e.g., electron beam lithography) with the armchair direction aligned along the [110] direction of the (001) facet. Graphene nanoribbons are grown from the seeds by CVD using methane and hydrogen gases at partial pressures selected for highly anisotropic growth.
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanoribbon array
electronic or photonic device incorporating graphene nanoribbons
Materials described outside the worked examples.
III-V semiconductor substrate
amorphous carbon seed
methane
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4A. Scanning electron microscope image of a graphene nanoribbon array made by graphene seed-mediated chemical vapor deposition growth on a Ge (001) …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.000001 torr | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,761,669Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B. Schematic illustration of a graphene nanoribbon growing anisotropically from a graphene seed particle on the (001) facet of a substrate. The armchair …
FIG. 2. Schematic illustration of a regular rectangular pattern of graphene nanoribbons on a substrate. The circles represent graphene seed particles and the …
FIG. 3. Schematic illustration of a graphene nanoribbon with armchair edges perfectly aligned along the Ge [110] direction (upper nanoribbon) and a graphene …
FIG. 4A. Scanning electron microscope image of a graphene nanoribbon array made by graphene seed-mediated chemical vapor deposition growth on a Ge (001) …
FIG. 5. Scanning electron microscope image of an array of graphene crystal structures, including graphene crosses and graphene nanoribbons, as well as other …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene nanoribbon array comprising: a semiconductor substrate having a (001) facet; and a plurality of graphene nanoribbons on the (001) facet of the semiconductor substrate; wherein the graphene nanoribbons have aspect ratios of at least 4; and further wherein the graphene nanoribbons have an armchair crystallographic direction of graphene running all the way along their long axes and an armchair configuration along their edges, and further wherein at least percent of the graphene nanoribbons have their long axis oriented along a single [110] direction of the semiconductor substrate.
The graphene nanoribbon array of claim 1, wherein at least 80 percent of the graphene nanoribbons have their long axis oriented along a single [110] direction of the semiconductor substrate.
The graphene nanoribbon array of claim 1, wherein the at least 60 percent of the graphene nanoribbons have their long axes rotated by no more than + 150 from the [110] direction of the semiconductor substrate.
The graphene nanoribbon array of claim 1, wherein the at least 80 percent of the graphene nanoribbons have their long axes rotated by no more than + 5° from the [110] direction of the semiconductor substrate.
The graphene nanoribbon array of claim 1, wherein the semiconductor substrate having a (001) facet is a germanium substrate.
The graphene nanoribbon array of claim 1, wherein the semiconductor substrate having a (001) facet is a III -V semiconductor substrate.
The array of claim 1, wherein the graphene nanoribbons having their long axes oriented along a single [1 10] direction of the semiconductor are arranged in a regular pattern.
The array of claim 1, wherein the average width of the graphene nanoribbons in the array is no greater than 50 nm.
Atty. Dkt. No.: 00300-0276
The method of claim 15, further comprising incorporating the graphene nanoribbons and the semiconductor substrate into an electronic or photonic device.
The method of claim 15, further comprising releasing at least a portion of the graphene nanoribbons from the semiconductor substrate and transferring the released graphene nanoribbons to a second substrate. 21
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials3 process steps
Graphene is grown in a single crystallographic orientation on Cu(111) sheet-growth substrate by CVD, then transferred to the (001) facet of a semiconductor substrate (e.g., Ge) using either a dry transfer method (PMMA/Au bilayer host substrate) or a wet transfer method (PMMA host substrate). Seeds are then patterned from the transferred graphene sheet by high-resolution lithography (e.g., electron beam lithography) with the armchair direction aligned along the [110] direction of the (001) facet. Graphene nanoribbons are grown from the seeds by CVD using methane and hydrogen gases at partial pressures selected for highly anisotropic growth.
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanoribbon array
electronic or photonic device incorporating graphene nanoribbons
Materials described outside the worked examples.
III-V semiconductor substrate
amorphous carbon seed
methane
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4A. Scanning electron microscope image of a graphene nanoribbon array made by graphene seed-mediated chemical vapor deposition growth on a Ge (001) …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.000001 torr | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,761,669Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B. Schematic illustration of a graphene nanoribbon growing anisotropically from a graphene seed particle on the (001) facet of a substrate. The armchair …
FIG. 2. Schematic illustration of a regular rectangular pattern of graphene nanoribbons on a substrate. The circles represent graphene seed particles and the …
FIG. 3. Schematic illustration of a graphene nanoribbon with armchair edges perfectly aligned along the Ge [110] direction (upper nanoribbon) and a graphene …
FIG. 4A. Scanning electron microscope image of a graphene nanoribbon array made by graphene seed-mediated chemical vapor deposition growth on a Ge (001) …
FIG. 5. Scanning electron microscope image of an array of graphene crystal structures, including graphene crosses and graphene nanoribbons, as well as other …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene nanoribbon array comprising: a semiconductor substrate having a (001) facet; and a plurality of graphene nanoribbons on the (001) facet of the semiconductor substrate; wherein the graphene nanoribbons have aspect ratios of at least 4; and further wherein the graphene nanoribbons have an armchair crystallographic direction of graphene running all the way along their long axes and an armchair configuration along their edges, and further wherein at least percent of the graphene nanoribbons have their long axis oriented along a single [110] direction of the semiconductor substrate.
The graphene nanoribbon array of claim 1, wherein at least 80 percent of the graphene nanoribbons have their long axis oriented along a single [110] direction of the semiconductor substrate.
The graphene nanoribbon array of claim 1, wherein the at least 60 percent of the graphene nanoribbons have their long axes rotated by no more than + 150 from the [110] direction of the semiconductor substrate.
The graphene nanoribbon array of claim 1, wherein the at least 80 percent of the graphene nanoribbons have their long axes rotated by no more than + 5° from the [110] direction of the semiconductor substrate.
The graphene nanoribbon array of claim 1, wherein the semiconductor substrate having a (001) facet is a germanium substrate.
The graphene nanoribbon array of claim 1, wherein the semiconductor substrate having a (001) facet is a III -V semiconductor substrate.
The array of claim 1, wherein the graphene nanoribbons having their long axes oriented along a single [1 10] direction of the semiconductor are arranged in a regular pattern.
The array of claim 1, wherein the average width of the graphene nanoribbons in the array is no greater than 50 nm.
Atty. Dkt. No.: 00300-0276
The method of claim 15, further comprising incorporating the graphene nanoribbons and the semiconductor substrate into an electronic or photonic device.
The method of claim 15, further comprising releasing at least a portion of the graphene nanoribbons from the semiconductor substrate and transferring the released graphene nanoribbons to a second substrate. 21
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials3 process steps
Graphene is grown in a single crystallographic orientation on Cu(111) sheet-growth substrate by CVD, then transferred to the (001) facet of a semiconductor substrate (e.g., Ge) using either a dry transfer method (PMMA/Au bilayer host substrate) or a wet transfer method (PMMA host substrate). Seeds are then patterned from the transferred graphene sheet by high-resolution lithography (e.g., electron beam lithography) with the armchair direction aligned along the [110] direction of the (001) facet. Graphene nanoribbons are grown from the seeds by CVD using methane and hydrogen gases at partial pressures selected for highly anisotropic growth.
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanoribbon array
electronic or photonic device incorporating graphene nanoribbons
Materials described outside the worked examples.
III-V semiconductor substrate
amorphous carbon seed
methane
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4A. Scanning electron microscope image of a graphene nanoribbon array made by graphene seed-mediated chemical vapor deposition growth on a Ge (001) …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.000001 torr | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
hydrogen gas
H₂
FIG. 5. Scanning electron microscope image of an array of graphene crystal structures, including graphene crosses and graphene nanoribbons, as well as other …
| — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 20 nm | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 50 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 40 nm | — |
Thickness | ≥ 500 nm | — |
Thickness | ≥ 300 nm | — |
Thickness | ≥ 35 nm | — |
Thickness | ≥ 60 nm | — |
Thickness | ≥ 200 nm | — |
Thickness | ≥ 1 mm | — |
Thickness | ≥ 10 mm | — |
hydrogen gas
H₂
FIG. 5. Scanning electron microscope image of an array of graphene crystal structures, including graphene crosses and graphene nanoribbons, as well as other …
| — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 20 nm | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 50 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 40 nm | — |
Thickness | ≥ 500 nm | — |
Thickness | ≥ 300 nm | — |
Thickness | ≥ 35 nm | — |
Thickness | ≥ 60 nm | — |
Thickness | ≥ 200 nm | — |
Thickness | ≥ 1 mm | — |
Thickness | ≥ 10 mm | — |
hydrogen gas
H₂
FIG. 5. Scanning electron microscope image of an array of graphene crystal structures, including graphene crosses and graphene nanoribbons, as well as other …
| — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 20 nm | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 50 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 40 nm | — |
Thickness | ≥ 500 nm | — |
Thickness | ≥ 300 nm | — |
Thickness | ≥ 35 nm | — |
Thickness | ≥ 60 nm | — |
Thickness | ≥ 200 nm | — |
Thickness | ≥ 1 mm | — |
Thickness | ≥ 10 mm | — |
hydrogen gas
H₂
FIG. 5. Scanning electron microscope image of an array of graphene crystal structures, including graphene crosses and graphene nanoribbons, as well as other …
| — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 20 nm | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 50 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 40 nm | — |
Thickness | ≥ 500 nm | — |
Thickness | ≥ 300 nm | — |
Thickness | ≥ 35 nm | — |
Thickness | ≥ 60 nm | — |
Thickness | ≥ 200 nm | — |
Thickness | ≥ 1 mm | — |
Thickness | ≥ 10 mm | — |