Patent
US 10,465,291METHOD AND SYSTEM FOR GROWTH OF GRAPHENE NANOSTRIPES BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION
Nai-Chang Yeh, Chen-Chih Hsu
CALIFORNIA INSTITUTE OF TECHNOLOGY·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,465,291Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 and can include fewer or a greater number of sources. In the illustrated embodiment, the gas sources are CH4, Ar, and H2, although the present invention …
FIG. 2 is a simplified schematic diagram illustrating a PECVD system for growing graphene nanostripes according to another embodiment of the present invention. …
FIG. 3 is a simplified flowchart illustrating a method of growing graphene nanostripes according to an embodiment of the present invention. The method 300 …
FIG. 4G. Finally, spatial gaps between edges with 1,2-DCB molecules attached can be filled in with carbon radicals dissociated from either methane or 1,2- DCB …
FIG. 5, the 1,2- DCB partial pressure (e.g., measured using the RGA) is plotted as a function of time. When the 1,2-DCB is turned on, as illustrated at ~ 30 …
FIG. 6. As an example, the length:width aspect ratios of graphene nanostripes grown using embodiments of the present invention can range from 10:1 to 130:1. …
FIG. 7 is an SEM image of a graphene nanostripe structure grown with a large precursor concentration ratio according to an embodiment of the present invention. …
FIG. 8 is a Raman spectra for a graphene nanostripe structure grown with a small precursor concentration ratio according to an embodiment of the present …
FIG. 9 was collected for a graphene nanostripe structure with a 1,2- DCB/CH₄ partial pressure ratio of 2.4. Raman spectra were taken via a Renishaw M₁₀₀₀ …
FIG. 10 is a plot illustrating partial gas pressures as a function of time during graphene nanostripe growth with a small precursor concentration ratio …
FIG. 11 is a plot illustrating additional partial gas pressures as a function of time during graphene nanostripe growth with a small precursor concentration …
FIG. 12 is a plot illustrating additional partial gas pressures as a function of time during graphene nanostripe growth with a large precursor concentration …
FIGS. 13A-13C, the 1,2-DCB/CH₄ partial pressure ratio is 1.5, 1.8 and 2.4, respectively. The UPS measurements were performed via the Kratos-Ultra-XPS model, …
FIG. 14 shows plots of optical emission spectroscopy intensity as a function of wavelength for PECVD-grown graphene nanostripes under differing graphene …
FIG. 15B. From these detailed TEM studies, the inventors determined that the typical size of GNSPs transferred to the TEM grid was 500 nm⁻¹.0 p m in width and …
FIG. 16. Thus, this presence of a distinct chorine peak in a branching region of the nano-flowers is in stark contrast to the absence of any chlorine signal in …
FIG. 17B that reveal < 0.1 % of optical transmission for wavelengths from 400 nm to 800 nm. Thus, GNSPs may be considered as efficient light absorbers for …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming vertical graphene nanost ri pes comprising one or several monolayers and characterized by a thickness normal to the one or several monolayers, a length orthogonal to the thickness, and a width orthogonal to the thickness, the method comprising: providing a substrate consisting of copper foil or nickel foam; subjecting the substrate to a reduced pressure environment in a processing chamber; providing methane gas and 1,2-dichlorobenzene (1,2-DCB) gas; flowing the methane gas and the 1,2-DCB into the processing chamber; establishing a partial pressure ratio of 1,2-DCB gas to methane gas in the processing chamber, wherein the partial pressure ratio is between 0 and 3; generating a plasma; thereafter, exposing the at least a portion of the substrate to the methane gas, the 1,2-DCB gas, and the plasma; and growing the vertical graphene nanostripes coupled to the at least a portion of the substrate, wherein one or more of the vertical graphene nanostripes are characterized by the thickness measured parallel to the substrate, the length extending parallel to the substrate in a first direction, and the width extending orthogonal to the substrate in a second direction, and an aspect ratio of the length to the width ranging from 10:1 to 130:1. Currently amended
The method of claim 1 wherein the partial pressure ratio is between 1 and 2. Original
The method of claim 1 further comprising generating C 6 radicals in the processing chamber concurrently with: exposing the at least a portion of the substrate to the methane gas, the 1,2-DCB gas, and the plasma; and growing the vertical graphene nanostripes. Previously presented
The method of claim 1 further comprising generating C₆H 6 in the processing chamber concurrently with: exposing the at least a portion of the substrate to the methane gas, the 1,2-DCB gas, and the plasma; and growing the vertical graphene nanostripes. Previously presented
The method of claim 1 further comprising providing hydrogen gas and generating HCl in the processing chamber concurrently with: exposing the at least a portion of the substrate to the methane gas, the 1,2-DCB gas, and the plasma; and growing the vertical graphene nanostripes. Previously presented
The method of claim 1 further comprising generating CN radicals in the processing chamber concurrently with: providing a gas including nitrogen; exposing the at least a portion of the substrate to the methane gas, the gas including nitrogen, the 1,2-DCB gas, and the plasma; and growing the vertical graphene nanostripes. Previously presented
A method of forming vertical graphene nanost ri pes comprising one or several monolayers and characterized by a thickness normal to the one or several monolayers, a length orthogonal to the thickness, and a width orthogonal to the thickness, the method comprising: providing a transition-metal substrate consisting of copper foil or nickel foam; subjecting the transition-metal substrate to a reduced pressure environment; providing methane gas and 1,2-dichlorobenzene (1,2-DCB) gas; exposing at least a portion of the transition-metal substrate to the methane gas and the (1,2-DCB) gas; generating a plasma; exposing the at least a portion of the transition-metal substrate to the methane gas, the (1,2-DCB) gas, and the plasma; and growing the vertical graphene nanostripes coupled to the at least a portion of the transition-metal substrate, wherein one or more of the vertical graphene nanostripes are characterized by the thickness measured parallel to the transition-metal substrate, the length extending parallel to the transition-metal substrate in a first direction, and the width extending orthogonal to the transition-metal substrate in a second direction, and an aspect ratio of the length to the width ranging from 10: 1 to 130:1. Currently amended
The method of claim 7 wherein the one or several monolayers consist of one monolayer. Currently amended
The method of claim 7 wherein generating the plasma and exposing the at least a portion of the transition-metal substrate is performed after exposing the at least a portion of the transition-metal substrate to the methane gas and the (1,2-DCB) gas. Previously presented
The method of claim 7 further comprising generating C 6 and C₂ radicals during exposing the at least a portion of the transition-metal substrate to the methane gas, the (1,2-DCB) gas, and the plasma. Previously presented
The method of claim 7 further comprising generating C₆H 6 during exposing the at least a portion of the transition-metal substrate to the methane gas, the (1,2-DCB) gas, and the plasma. Previously presented
The method of claim 7 wherein a partial pressure ratio of the (1,2-DCB) gas to methane ranges from 0 to 3. Previously presented
. Canceled
. Canceled
- 21. (Canceled. Canceled
Canceled
The method of claim I wherein the one or several monolayers consist of one monolayer. Currently amended
The method of claim I wherein the substrate comprises a growth substrate. Previously presented
. Canceled
The method of claim I wherein growing the vertical graphene nanostripes coupled to the at least a portion of the substrate comprises bonding of benzene rings to the substrate with carbon atoms of the benzene rings aligned with the length and the width of the vertical graphene nanostripes. Previously presented
The method of claim 25 wherein growing the vertical graphene nanostripes coupled to the at least a portion of the substrate further comprises bonding of additional benzene rings to previously bonded benzene rin g s with carbon atoms of the additional benzene rings aligned with the length and the width of the vertical graphene nanostripes. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
vertical graphene nanostripe (GNSP)
Materials described outside the worked examples.
copper foil
Cu
nickel foam
Ni
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5, the 1,2- DCB partial pressure (e.g., measured using the RGA) is plotted as a function of time. When the 1,2-DCB is turned on, as illustrated at ~ 30 …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
aspect ratio of length to width of vertical graphene nanostripes | 10–130 | C |
work function of GNSPs grown at 1,2-DCB/CH4 partial pressure ratio = 1.5 | 4.45 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,465,291Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 and can include fewer or a greater number of sources. In the illustrated embodiment, the gas sources are CH4, Ar, and H2, although the present invention …
FIG. 2 is a simplified schematic diagram illustrating a PECVD system for growing graphene nanostripes according to another embodiment of the present invention. …
FIG. 3 is a simplified flowchart illustrating a method of growing graphene nanostripes according to an embodiment of the present invention. The method 300 …
FIG. 4G. Finally, spatial gaps between edges with 1,2-DCB molecules attached can be filled in with carbon radicals dissociated from either methane or 1,2- DCB …
FIG. 5, the 1,2- DCB partial pressure (e.g., measured using the RGA) is plotted as a function of time. When the 1,2-DCB is turned on, as illustrated at ~ 30 …
FIG. 6. As an example, the length:width aspect ratios of graphene nanostripes grown using embodiments of the present invention can range from 10:1 to 130:1. …
FIG. 7 is an SEM image of a graphene nanostripe structure grown with a large precursor concentration ratio according to an embodiment of the present invention. …
FIG. 8 is a Raman spectra for a graphene nanostripe structure grown with a small precursor concentration ratio according to an embodiment of the present …
FIG. 9 was collected for a graphene nanostripe structure with a 1,2- DCB/CH₄ partial pressure ratio of 2.4. Raman spectra were taken via a Renishaw M₁₀₀₀ …
FIG. 10 is a plot illustrating partial gas pressures as a function of time during graphene nanostripe growth with a small precursor concentration ratio …
FIG. 11 is a plot illustrating additional partial gas pressures as a function of time during graphene nanostripe growth with a small precursor concentration …
FIG. 12 is a plot illustrating additional partial gas pressures as a function of time during graphene nanostripe growth with a large precursor concentration …
FIGS. 13A-13C, the 1,2-DCB/CH₄ partial pressure ratio is 1.5, 1.8 and 2.4, respectively. The UPS measurements were performed via the Kratos-Ultra-XPS model, …
FIG. 14 shows plots of optical emission spectroscopy intensity as a function of wavelength for PECVD-grown graphene nanostripes under differing graphene …
FIG. 15B. From these detailed TEM studies, the inventors determined that the typical size of GNSPs transferred to the TEM grid was 500 nm⁻¹.0 p m in width and …
FIG. 16. Thus, this presence of a distinct chorine peak in a branching region of the nano-flowers is in stark contrast to the absence of any chlorine signal in …
FIG. 17B that reveal < 0.1 % of optical transmission for wavelengths from 400 nm to 800 nm. Thus, GNSPs may be considered as efficient light absorbers for …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming vertical graphene nanost ri pes comprising one or several monolayers and characterized by a thickness normal to the one or several monolayers, a length orthogonal to the thickness, and a width orthogonal to the thickness, the method comprising: providing a substrate consisting of copper foil or nickel foam; subjecting the substrate to a reduced pressure environment in a processing chamber; providing methane gas and 1,2-dichlorobenzene (1,2-DCB) gas; flowing the methane gas and the 1,2-DCB into the processing chamber; establishing a partial pressure ratio of 1,2-DCB gas to methane gas in the processing chamber, wherein the partial pressure ratio is between 0 and 3; generating a plasma; thereafter, exposing the at least a portion of the substrate to the methane gas, the 1,2-DCB gas, and the plasma; and growing the vertical graphene nanostripes coupled to the at least a portion of the substrate, wherein one or more of the vertical graphene nanostripes are characterized by the thickness measured parallel to the substrate, the length extending parallel to the substrate in a first direction, and the width extending orthogonal to the substrate in a second direction, and an aspect ratio of the length to the width ranging from 10:1 to 130:1. Currently amended
The method of claim 1 wherein the partial pressure ratio is between 1 and 2. Original
The method of claim 1 further comprising generating C 6 radicals in the processing chamber concurrently with: exposing the at least a portion of the substrate to the methane gas, the 1,2-DCB gas, and the plasma; and growing the vertical graphene nanostripes. Previously presented
The method of claim 1 further comprising generating C₆H 6 in the processing chamber concurrently with: exposing the at least a portion of the substrate to the methane gas, the 1,2-DCB gas, and the plasma; and growing the vertical graphene nanostripes. Previously presented
The method of claim 1 further comprising providing hydrogen gas and generating HCl in the processing chamber concurrently with: exposing the at least a portion of the substrate to the methane gas, the 1,2-DCB gas, and the plasma; and growing the vertical graphene nanostripes. Previously presented
The method of claim 1 further comprising generating CN radicals in the processing chamber concurrently with: providing a gas including nitrogen; exposing the at least a portion of the substrate to the methane gas, the gas including nitrogen, the 1,2-DCB gas, and the plasma; and growing the vertical graphene nanostripes. Previously presented
A method of forming vertical graphene nanost ri pes comprising one or several monolayers and characterized by a thickness normal to the one or several monolayers, a length orthogonal to the thickness, and a width orthogonal to the thickness, the method comprising: providing a transition-metal substrate consisting of copper foil or nickel foam; subjecting the transition-metal substrate to a reduced pressure environment; providing methane gas and 1,2-dichlorobenzene (1,2-DCB) gas; exposing at least a portion of the transition-metal substrate to the methane gas and the (1,2-DCB) gas; generating a plasma; exposing the at least a portion of the transition-metal substrate to the methane gas, the (1,2-DCB) gas, and the plasma; and growing the vertical graphene nanostripes coupled to the at least a portion of the transition-metal substrate, wherein one or more of the vertical graphene nanostripes are characterized by the thickness measured parallel to the transition-metal substrate, the length extending parallel to the transition-metal substrate in a first direction, and the width extending orthogonal to the transition-metal substrate in a second direction, and an aspect ratio of the length to the width ranging from 10: 1 to 130:1. Currently amended
The method of claim 7 wherein the one or several monolayers consist of one monolayer. Currently amended
The method of claim 7 wherein generating the plasma and exposing the at least a portion of the transition-metal substrate is performed after exposing the at least a portion of the transition-metal substrate to the methane gas and the (1,2-DCB) gas. Previously presented
The method of claim 7 further comprising generating C 6 and C₂ radicals during exposing the at least a portion of the transition-metal substrate to the methane gas, the (1,2-DCB) gas, and the plasma. Previously presented
The method of claim 7 further comprising generating C₆H 6 during exposing the at least a portion of the transition-metal substrate to the methane gas, the (1,2-DCB) gas, and the plasma. Previously presented
The method of claim 7 wherein a partial pressure ratio of the (1,2-DCB) gas to methane ranges from 0 to 3. Previously presented
. Canceled
. Canceled
- 21. (Canceled. Canceled
Canceled
The method of claim I wherein the one or several monolayers consist of one monolayer. Currently amended
The method of claim I wherein the substrate comprises a growth substrate. Previously presented
. Canceled
The method of claim I wherein growing the vertical graphene nanostripes coupled to the at least a portion of the substrate comprises bonding of benzene rings to the substrate with carbon atoms of the benzene rings aligned with the length and the width of the vertical graphene nanostripes. Previously presented
The method of claim 25 wherein growing the vertical graphene nanostripes coupled to the at least a portion of the substrate further comprises bonding of additional benzene rings to previously bonded benzene rin g s with carbon atoms of the additional benzene rings aligned with the length and the width of the vertical graphene nanostripes. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
vertical graphene nanostripe (GNSP)
Materials described outside the worked examples.
copper foil
Cu
nickel foam
Ni
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5, the 1,2- DCB partial pressure (e.g., measured using the RGA) is plotted as a function of time. When the 1,2-DCB is turned on, as illustrated at ~ 30 …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
aspect ratio of length to width of vertical graphene nanostripes | 10–130 | C |
work function of GNSPs grown at 1,2-DCB/CH4 partial pressure ratio = 1.5 | 4.45 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,465,291Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 and can include fewer or a greater number of sources. In the illustrated embodiment, the gas sources are CH4, Ar, and H2, although the present invention …
FIG. 2 is a simplified schematic diagram illustrating a PECVD system for growing graphene nanostripes according to another embodiment of the present invention. …
FIG. 3 is a simplified flowchart illustrating a method of growing graphene nanostripes according to an embodiment of the present invention. The method 300 …
FIG. 4G. Finally, spatial gaps between edges with 1,2-DCB molecules attached can be filled in with carbon radicals dissociated from either methane or 1,2- DCB …
FIG. 5, the 1,2- DCB partial pressure (e.g., measured using the RGA) is plotted as a function of time. When the 1,2-DCB is turned on, as illustrated at ~ 30 …
FIG. 6. As an example, the length:width aspect ratios of graphene nanostripes grown using embodiments of the present invention can range from 10:1 to 130:1. …
FIG. 7 is an SEM image of a graphene nanostripe structure grown with a large precursor concentration ratio according to an embodiment of the present invention. …
FIG. 8 is a Raman spectra for a graphene nanostripe structure grown with a small precursor concentration ratio according to an embodiment of the present …
FIG. 9 was collected for a graphene nanostripe structure with a 1,2- DCB/CH₄ partial pressure ratio of 2.4. Raman spectra were taken via a Renishaw M₁₀₀₀ …
FIG. 10 is a plot illustrating partial gas pressures as a function of time during graphene nanostripe growth with a small precursor concentration ratio …
FIG. 11 is a plot illustrating additional partial gas pressures as a function of time during graphene nanostripe growth with a small precursor concentration …
FIG. 12 is a plot illustrating additional partial gas pressures as a function of time during graphene nanostripe growth with a large precursor concentration …
FIGS. 13A-13C, the 1,2-DCB/CH₄ partial pressure ratio is 1.5, 1.8 and 2.4, respectively. The UPS measurements were performed via the Kratos-Ultra-XPS model, …
FIG. 14 shows plots of optical emission spectroscopy intensity as a function of wavelength for PECVD-grown graphene nanostripes under differing graphene …
FIG. 15B. From these detailed TEM studies, the inventors determined that the typical size of GNSPs transferred to the TEM grid was 500 nm⁻¹.0 p m in width and …
FIG. 16. Thus, this presence of a distinct chorine peak in a branching region of the nano-flowers is in stark contrast to the absence of any chlorine signal in …
FIG. 17B that reveal < 0.1 % of optical transmission for wavelengths from 400 nm to 800 nm. Thus, GNSPs may be considered as efficient light absorbers for …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming vertical graphene nanost ri pes comprising one or several monolayers and characterized by a thickness normal to the one or several monolayers, a length orthogonal to the thickness, and a width orthogonal to the thickness, the method comprising: providing a substrate consisting of copper foil or nickel foam; subjecting the substrate to a reduced pressure environment in a processing chamber; providing methane gas and 1,2-dichlorobenzene (1,2-DCB) gas; flowing the methane gas and the 1,2-DCB into the processing chamber; establishing a partial pressure ratio of 1,2-DCB gas to methane gas in the processing chamber, wherein the partial pressure ratio is between 0 and 3; generating a plasma; thereafter, exposing the at least a portion of the substrate to the methane gas, the 1,2-DCB gas, and the plasma; and growing the vertical graphene nanostripes coupled to the at least a portion of the substrate, wherein one or more of the vertical graphene nanostripes are characterized by the thickness measured parallel to the substrate, the length extending parallel to the substrate in a first direction, and the width extending orthogonal to the substrate in a second direction, and an aspect ratio of the length to the width ranging from 10:1 to 130:1. Currently amended
The method of claim 1 wherein the partial pressure ratio is between 1 and 2. Original
The method of claim 1 further comprising generating C 6 radicals in the processing chamber concurrently with: exposing the at least a portion of the substrate to the methane gas, the 1,2-DCB gas, and the plasma; and growing the vertical graphene nanostripes. Previously presented
The method of claim 1 further comprising generating C₆H 6 in the processing chamber concurrently with: exposing the at least a portion of the substrate to the methane gas, the 1,2-DCB gas, and the plasma; and growing the vertical graphene nanostripes. Previously presented
The method of claim 1 further comprising providing hydrogen gas and generating HCl in the processing chamber concurrently with: exposing the at least a portion of the substrate to the methane gas, the 1,2-DCB gas, and the plasma; and growing the vertical graphene nanostripes. Previously presented
The method of claim 1 further comprising generating CN radicals in the processing chamber concurrently with: providing a gas including nitrogen; exposing the at least a portion of the substrate to the methane gas, the gas including nitrogen, the 1,2-DCB gas, and the plasma; and growing the vertical graphene nanostripes. Previously presented
A method of forming vertical graphene nanost ri pes comprising one or several monolayers and characterized by a thickness normal to the one or several monolayers, a length orthogonal to the thickness, and a width orthogonal to the thickness, the method comprising: providing a transition-metal substrate consisting of copper foil or nickel foam; subjecting the transition-metal substrate to a reduced pressure environment; providing methane gas and 1,2-dichlorobenzene (1,2-DCB) gas; exposing at least a portion of the transition-metal substrate to the methane gas and the (1,2-DCB) gas; generating a plasma; exposing the at least a portion of the transition-metal substrate to the methane gas, the (1,2-DCB) gas, and the plasma; and growing the vertical graphene nanostripes coupled to the at least a portion of the transition-metal substrate, wherein one or more of the vertical graphene nanostripes are characterized by the thickness measured parallel to the transition-metal substrate, the length extending parallel to the transition-metal substrate in a first direction, and the width extending orthogonal to the transition-metal substrate in a second direction, and an aspect ratio of the length to the width ranging from 10: 1 to 130:1. Currently amended
The method of claim 7 wherein the one or several monolayers consist of one monolayer. Currently amended
The method of claim 7 wherein generating the plasma and exposing the at least a portion of the transition-metal substrate is performed after exposing the at least a portion of the transition-metal substrate to the methane gas and the (1,2-DCB) gas. Previously presented
The method of claim 7 further comprising generating C 6 and C₂ radicals during exposing the at least a portion of the transition-metal substrate to the methane gas, the (1,2-DCB) gas, and the plasma. Previously presented
The method of claim 7 further comprising generating C₆H 6 during exposing the at least a portion of the transition-metal substrate to the methane gas, the (1,2-DCB) gas, and the plasma. Previously presented
The method of claim 7 wherein a partial pressure ratio of the (1,2-DCB) gas to methane ranges from 0 to 3. Previously presented
. Canceled
. Canceled
- 21. (Canceled. Canceled
Canceled
The method of claim I wherein the one or several monolayers consist of one monolayer. Currently amended
The method of claim I wherein the substrate comprises a growth substrate. Previously presented
. Canceled
The method of claim I wherein growing the vertical graphene nanostripes coupled to the at least a portion of the substrate comprises bonding of benzene rings to the substrate with carbon atoms of the benzene rings aligned with the length and the width of the vertical graphene nanostripes. Previously presented
The method of claim 25 wherein growing the vertical graphene nanostripes coupled to the at least a portion of the substrate further comprises bonding of additional benzene rings to previously bonded benzene rin g s with carbon atoms of the additional benzene rings aligned with the length and the width of the vertical graphene nanostripes. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
vertical graphene nanostripe (GNSP)
Materials described outside the worked examples.
copper foil
Cu
nickel foam
Ni
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5, the 1,2- DCB partial pressure (e.g., measured using the RGA) is plotted as a function of time. When the 1,2-DCB is turned on, as illustrated at ~ 30 …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
aspect ratio of length to width of vertical graphene nanostripes | 10–130 | C |
work function of GNSPs grown at 1,2-DCB/CH4 partial pressure ratio = 1.5 | 4.45 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,465,291Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 and can include fewer or a greater number of sources. In the illustrated embodiment, the gas sources are CH4, Ar, and H2, although the present invention …
FIG. 2 is a simplified schematic diagram illustrating a PECVD system for growing graphene nanostripes according to another embodiment of the present invention. …
FIG. 3 is a simplified flowchart illustrating a method of growing graphene nanostripes according to an embodiment of the present invention. The method 300 …
FIG. 4G. Finally, spatial gaps between edges with 1,2-DCB molecules attached can be filled in with carbon radicals dissociated from either methane or 1,2- DCB …
FIG. 5, the 1,2- DCB partial pressure (e.g., measured using the RGA) is plotted as a function of time. When the 1,2-DCB is turned on, as illustrated at ~ 30 …
FIG. 6. As an example, the length:width aspect ratios of graphene nanostripes grown using embodiments of the present invention can range from 10:1 to 130:1. …
FIG. 7 is an SEM image of a graphene nanostripe structure grown with a large precursor concentration ratio according to an embodiment of the present invention. …
FIG. 8 is a Raman spectra for a graphene nanostripe structure grown with a small precursor concentration ratio according to an embodiment of the present …
FIG. 9 was collected for a graphene nanostripe structure with a 1,2- DCB/CH₄ partial pressure ratio of 2.4. Raman spectra were taken via a Renishaw M₁₀₀₀ …
FIG. 10 is a plot illustrating partial gas pressures as a function of time during graphene nanostripe growth with a small precursor concentration ratio …
FIG. 11 is a plot illustrating additional partial gas pressures as a function of time during graphene nanostripe growth with a small precursor concentration …
FIG. 12 is a plot illustrating additional partial gas pressures as a function of time during graphene nanostripe growth with a large precursor concentration …
FIGS. 13A-13C, the 1,2-DCB/CH₄ partial pressure ratio is 1.5, 1.8 and 2.4, respectively. The UPS measurements were performed via the Kratos-Ultra-XPS model, …
FIG. 14 shows plots of optical emission spectroscopy intensity as a function of wavelength for PECVD-grown graphene nanostripes under differing graphene …
FIG. 15B. From these detailed TEM studies, the inventors determined that the typical size of GNSPs transferred to the TEM grid was 500 nm⁻¹.0 p m in width and …
FIG. 16. Thus, this presence of a distinct chorine peak in a branching region of the nano-flowers is in stark contrast to the absence of any chlorine signal in …
FIG. 17B that reveal < 0.1 % of optical transmission for wavelengths from 400 nm to 800 nm. Thus, GNSPs may be considered as efficient light absorbers for …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming vertical graphene nanost ri pes comprising one or several monolayers and characterized by a thickness normal to the one or several monolayers, a length orthogonal to the thickness, and a width orthogonal to the thickness, the method comprising: providing a substrate consisting of copper foil or nickel foam; subjecting the substrate to a reduced pressure environment in a processing chamber; providing methane gas and 1,2-dichlorobenzene (1,2-DCB) gas; flowing the methane gas and the 1,2-DCB into the processing chamber; establishing a partial pressure ratio of 1,2-DCB gas to methane gas in the processing chamber, wherein the partial pressure ratio is between 0 and 3; generating a plasma; thereafter, exposing the at least a portion of the substrate to the methane gas, the 1,2-DCB gas, and the plasma; and growing the vertical graphene nanostripes coupled to the at least a portion of the substrate, wherein one or more of the vertical graphene nanostripes are characterized by the thickness measured parallel to the substrate, the length extending parallel to the substrate in a first direction, and the width extending orthogonal to the substrate in a second direction, and an aspect ratio of the length to the width ranging from 10:1 to 130:1. Currently amended
The method of claim 1 wherein the partial pressure ratio is between 1 and 2. Original
The method of claim 1 further comprising generating C 6 radicals in the processing chamber concurrently with: exposing the at least a portion of the substrate to the methane gas, the 1,2-DCB gas, and the plasma; and growing the vertical graphene nanostripes. Previously presented
The method of claim 1 further comprising generating C₆H 6 in the processing chamber concurrently with: exposing the at least a portion of the substrate to the methane gas, the 1,2-DCB gas, and the plasma; and growing the vertical graphene nanostripes. Previously presented
The method of claim 1 further comprising providing hydrogen gas and generating HCl in the processing chamber concurrently with: exposing the at least a portion of the substrate to the methane gas, the 1,2-DCB gas, and the plasma; and growing the vertical graphene nanostripes. Previously presented
The method of claim 1 further comprising generating CN radicals in the processing chamber concurrently with: providing a gas including nitrogen; exposing the at least a portion of the substrate to the methane gas, the gas including nitrogen, the 1,2-DCB gas, and the plasma; and growing the vertical graphene nanostripes. Previously presented
A method of forming vertical graphene nanost ri pes comprising one or several monolayers and characterized by a thickness normal to the one or several monolayers, a length orthogonal to the thickness, and a width orthogonal to the thickness, the method comprising: providing a transition-metal substrate consisting of copper foil or nickel foam; subjecting the transition-metal substrate to a reduced pressure environment; providing methane gas and 1,2-dichlorobenzene (1,2-DCB) gas; exposing at least a portion of the transition-metal substrate to the methane gas and the (1,2-DCB) gas; generating a plasma; exposing the at least a portion of the transition-metal substrate to the methane gas, the (1,2-DCB) gas, and the plasma; and growing the vertical graphene nanostripes coupled to the at least a portion of the transition-metal substrate, wherein one or more of the vertical graphene nanostripes are characterized by the thickness measured parallel to the transition-metal substrate, the length extending parallel to the transition-metal substrate in a first direction, and the width extending orthogonal to the transition-metal substrate in a second direction, and an aspect ratio of the length to the width ranging from 10: 1 to 130:1. Currently amended
The method of claim 7 wherein the one or several monolayers consist of one monolayer. Currently amended
The method of claim 7 wherein generating the plasma and exposing the at least a portion of the transition-metal substrate is performed after exposing the at least a portion of the transition-metal substrate to the methane gas and the (1,2-DCB) gas. Previously presented
The method of claim 7 further comprising generating C 6 and C₂ radicals during exposing the at least a portion of the transition-metal substrate to the methane gas, the (1,2-DCB) gas, and the plasma. Previously presented
The method of claim 7 further comprising generating C₆H 6 during exposing the at least a portion of the transition-metal substrate to the methane gas, the (1,2-DCB) gas, and the plasma. Previously presented
The method of claim 7 wherein a partial pressure ratio of the (1,2-DCB) gas to methane ranges from 0 to 3. Previously presented
. Canceled
. Canceled
- 21. (Canceled. Canceled
Canceled
The method of claim I wherein the one or several monolayers consist of one monolayer. Currently amended
The method of claim I wherein the substrate comprises a growth substrate. Previously presented
. Canceled
The method of claim I wherein growing the vertical graphene nanostripes coupled to the at least a portion of the substrate comprises bonding of benzene rings to the substrate with carbon atoms of the benzene rings aligned with the length and the width of the vertical graphene nanostripes. Previously presented
The method of claim 25 wherein growing the vertical graphene nanostripes coupled to the at least a portion of the substrate further comprises bonding of additional benzene rings to previously bonded benzene rin g s with carbon atoms of the additional benzene rings aligned with the length and the width of the vertical graphene nanostripes. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
vertical graphene nanostripe (GNSP)
Materials described outside the worked examples.
copper foil
Cu
nickel foam
Ni
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5, the 1,2- DCB partial pressure (e.g., measured using the RGA) is plotted as a function of time. When the 1,2-DCB is turned on, as illustrated at ~ 30 …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
aspect ratio of length to width of vertical graphene nanostripes | 10–130 | C |
work function of GNSPs grown at 1,2-DCB/CH4 partial pressure ratio = 1.5 | 4.45 |
Related documents with shared materials, methods, properties, or citations.
methane gas
CH₄
1,2-dichlorobenzene
C₆H₄Cl₂
C₆ radicals
C₆
benzene
C₆H₆
hydrogen gas
H₂
hydrogen chloride
HCl
nitrogen-containing gas
CN radicals
CN
C₂ radicals
C₂
vertical graphene nanostripes
C
FIG. 6. As an example, the length:width aspect ratios of graphene nanostripes grown using embodiments of the present invention can range from 10:1 to 130:1. …
FIG. 7 is an SEM image of a graphene nanostripe structure grown with a large precursor concentration ratio according to an embodiment of the present invention. …
FIG. 8 is a Raman spectra for a graphene nanostripe structure grown with a small precursor concentration ratio according to an embodiment of the present …
FIG. 9 was collected for a graphene nanostripe structure with a 1,2- DCB/CH₄ partial pressure ratio of 2.4. Raman spectra were taken via a Renishaw M₁₀₀₀ …
FIG. 10 is a plot illustrating partial gas pressures as a function of time during graphene nanostripe growth with a small precursor concentration ratio …
FIG. 11 is a plot illustrating additional partial gas pressures as a function of time during graphene nanostripe growth with a small precursor concentration …
FIG. 12 is a plot illustrating additional partial gas pressures as a function of time during graphene nanostripe growth with a large precursor concentration …
FIGS. 13A-13C, the 1,2-DCB/CH₄ partial pressure ratio is 1.5, 1.8 and 2.4, respectively. The UPS measurements were performed via the Kratos-Ultra-XPS model, …
FIG. 15B. From these detailed TEM studies, the inventors determined that the typical size of GNSPs transferred to the TEM grid was 500 nm⁻¹.0 p m in width and …
FIG. 15B. From these detailed TEM studies, the inventors determined that the typical size of GNSPs transferred to the TEM grid was 500 nm⁻¹.0 p m in width and …
FIG. 15B. From these detailed TEM studies, the inventors determined that the typical size of GNSPs transferred to the TEM grid was 500 nm⁻¹.0 p m in width and …
C |
work function of GNSPs grown at 1,2-DCB/CH4 partial pressure ratio = 2.4 | 4.16 | C |
typical width of GNSPs transferred to TEM grid | 500–1000 | C |
typical length of GNSPs transferred to TEM grid | 5–10 | C |
Pressure | 1e-9 Torr | — |
— | ≤ 60 W | — |
Duration | ≤ 20 minutes | — |
methane gas
CH₄
1,2-dichlorobenzene
C₆H₄Cl₂
C₆ radicals
C₆
benzene
C₆H₆
hydrogen gas
H₂
hydrogen chloride
HCl
nitrogen-containing gas
CN radicals
CN
C₂ radicals
C₂
vertical graphene nanostripes
C
FIG. 6. As an example, the length:width aspect ratios of graphene nanostripes grown using embodiments of the present invention can range from 10:1 to 130:1. …
FIG. 7 is an SEM image of a graphene nanostripe structure grown with a large precursor concentration ratio according to an embodiment of the present invention. …
FIG. 8 is a Raman spectra for a graphene nanostripe structure grown with a small precursor concentration ratio according to an embodiment of the present …
FIG. 9 was collected for a graphene nanostripe structure with a 1,2- DCB/CH₄ partial pressure ratio of 2.4. Raman spectra were taken via a Renishaw M₁₀₀₀ …
FIG. 10 is a plot illustrating partial gas pressures as a function of time during graphene nanostripe growth with a small precursor concentration ratio …
FIG. 11 is a plot illustrating additional partial gas pressures as a function of time during graphene nanostripe growth with a small precursor concentration …
FIG. 12 is a plot illustrating additional partial gas pressures as a function of time during graphene nanostripe growth with a large precursor concentration …
FIGS. 13A-13C, the 1,2-DCB/CH₄ partial pressure ratio is 1.5, 1.8 and 2.4, respectively. The UPS measurements were performed via the Kratos-Ultra-XPS model, …
FIG. 15B. From these detailed TEM studies, the inventors determined that the typical size of GNSPs transferred to the TEM grid was 500 nm⁻¹.0 p m in width and …
FIG. 15B. From these detailed TEM studies, the inventors determined that the typical size of GNSPs transferred to the TEM grid was 500 nm⁻¹.0 p m in width and …
FIG. 15B. From these detailed TEM studies, the inventors determined that the typical size of GNSPs transferred to the TEM grid was 500 nm⁻¹.0 p m in width and …
C |
work function of GNSPs grown at 1,2-DCB/CH4 partial pressure ratio = 2.4 | 4.16 | C |
typical width of GNSPs transferred to TEM grid | 500–1000 | C |
typical length of GNSPs transferred to TEM grid | 5–10 | C |
Pressure | 1e-9 Torr | — |
— | ≤ 60 W | — |
Duration | ≤ 20 minutes | — |
methane gas
CH₄
1,2-dichlorobenzene
C₆H₄Cl₂
C₆ radicals
C₆
benzene
C₆H₆
hydrogen gas
H₂
hydrogen chloride
HCl
nitrogen-containing gas
CN radicals
CN
C₂ radicals
C₂
vertical graphene nanostripes
C
FIG. 6. As an example, the length:width aspect ratios of graphene nanostripes grown using embodiments of the present invention can range from 10:1 to 130:1. …
FIG. 7 is an SEM image of a graphene nanostripe structure grown with a large precursor concentration ratio according to an embodiment of the present invention. …
FIG. 8 is a Raman spectra for a graphene nanostripe structure grown with a small precursor concentration ratio according to an embodiment of the present …
FIG. 9 was collected for a graphene nanostripe structure with a 1,2- DCB/CH₄ partial pressure ratio of 2.4. Raman spectra were taken via a Renishaw M₁₀₀₀ …
FIG. 10 is a plot illustrating partial gas pressures as a function of time during graphene nanostripe growth with a small precursor concentration ratio …
FIG. 11 is a plot illustrating additional partial gas pressures as a function of time during graphene nanostripe growth with a small precursor concentration …
FIG. 12 is a plot illustrating additional partial gas pressures as a function of time during graphene nanostripe growth with a large precursor concentration …
FIGS. 13A-13C, the 1,2-DCB/CH₄ partial pressure ratio is 1.5, 1.8 and 2.4, respectively. The UPS measurements were performed via the Kratos-Ultra-XPS model, …
FIG. 15B. From these detailed TEM studies, the inventors determined that the typical size of GNSPs transferred to the TEM grid was 500 nm⁻¹.0 p m in width and …
FIG. 15B. From these detailed TEM studies, the inventors determined that the typical size of GNSPs transferred to the TEM grid was 500 nm⁻¹.0 p m in width and …
FIG. 15B. From these detailed TEM studies, the inventors determined that the typical size of GNSPs transferred to the TEM grid was 500 nm⁻¹.0 p m in width and …
C |
work function of GNSPs grown at 1,2-DCB/CH4 partial pressure ratio = 2.4 | 4.16 | C |
typical width of GNSPs transferred to TEM grid | 500–1000 | C |
typical length of GNSPs transferred to TEM grid | 5–10 | C |
Pressure | 1e-9 Torr | — |
— | ≤ 60 W | — |
Duration | ≤ 20 minutes | — |
methane gas
CH₄
1,2-dichlorobenzene
C₆H₄Cl₂
C₆ radicals
C₆
benzene
C₆H₆
hydrogen gas
H₂
hydrogen chloride
HCl
nitrogen-containing gas
CN radicals
CN
C₂ radicals
C₂
vertical graphene nanostripes
C
FIG. 6. As an example, the length:width aspect ratios of graphene nanostripes grown using embodiments of the present invention can range from 10:1 to 130:1. …
FIG. 7 is an SEM image of a graphene nanostripe structure grown with a large precursor concentration ratio according to an embodiment of the present invention. …
FIG. 8 is a Raman spectra for a graphene nanostripe structure grown with a small precursor concentration ratio according to an embodiment of the present …
FIG. 9 was collected for a graphene nanostripe structure with a 1,2- DCB/CH₄ partial pressure ratio of 2.4. Raman spectra were taken via a Renishaw M₁₀₀₀ …
FIG. 10 is a plot illustrating partial gas pressures as a function of time during graphene nanostripe growth with a small precursor concentration ratio …
FIG. 11 is a plot illustrating additional partial gas pressures as a function of time during graphene nanostripe growth with a small precursor concentration …
FIG. 12 is a plot illustrating additional partial gas pressures as a function of time during graphene nanostripe growth with a large precursor concentration …
FIGS. 13A-13C, the 1,2-DCB/CH₄ partial pressure ratio is 1.5, 1.8 and 2.4, respectively. The UPS measurements were performed via the Kratos-Ultra-XPS model, …
FIG. 15B. From these detailed TEM studies, the inventors determined that the typical size of GNSPs transferred to the TEM grid was 500 nm⁻¹.0 p m in width and …
FIG. 15B. From these detailed TEM studies, the inventors determined that the typical size of GNSPs transferred to the TEM grid was 500 nm⁻¹.0 p m in width and …
FIG. 15B. From these detailed TEM studies, the inventors determined that the typical size of GNSPs transferred to the TEM grid was 500 nm⁻¹.0 p m in width and …
C |
work function of GNSPs grown at 1,2-DCB/CH4 partial pressure ratio = 2.4 | 4.16 | C |
typical width of GNSPs transferred to TEM grid | 500–1000 | C |
typical length of GNSPs transferred to TEM grid | 5–10 | C |
Pressure | 1e-9 Torr | — |
— | ≤ 60 W | — |
Duration | ≤ 20 minutes | — |