Method for the Controlled Growth of a Graphene Film

Laurent Baraton

Patent

Atlas literature

Patent

US 9,206,509

Method for the Controlled Growth of a Graphene Film

Laurent Baraton

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

6 independent · 17 dependent

1
Independent
canceled
1. 8
  Dependent← claim 1metal layerC
  The process as claimed in claim 1 23, wherein the operation for modifying the phase of the mixture into two phases, a metal phase and a graphite phase respectively, includes increasing the carbon concentration in the carbon solid solution in the metal.
2. 9
  Dependent← claim 1C
  The process as claimed in claim 1 23, further comprising a step of exposure to an oxidizing plasma to eliminate the upper graphene ﬁlm.
3. 13
  Dependent← claim 1metal layerAl₂O₃SiO₂MgOspinel
  The process as claimed in claim 1 23, wherein the metal layer is produced by epitaxy, the substrate being an inert single-crystal substrate which may be of the sapphire or quartz type or made of magnesium oxide or a spinel.
4. 16
  Dependent← claim 1, claim 2, claim 3, claim 4, claim 5, claim 6, claim 7, claim 8, claim 9, claim 10, claim 11, claim 12, claim 13, claim 14, claim 15CoNiAuCu
  The controlled process as claimed in claim 1- 23, wherein the metal is selected from a group consisting of cobalt, nickel, gold, copper, any type of transition metal, and noble metals.
2
Independent
canceled
1. 3
  Dependent← claim 2metal layer
  The process as claimed in claim 2 23, further comprising an operation of chemically etching the metal layer.
2. 18
  Dependent← claim 2CH₄C₂H₂C₆H₆
  1 8. The process as claimed in claim 2 23, wherein the exposure to a controlled ﬂux of carbon atoms or carbon-containing radicals or carbon-containing ions is carried out in a reactor using a gaseous precursor of the CH4, C₂H₂ or C₆ H₆ type at a temperature of between about 450 ° C and about 900 °C.
3. 19
  Dependent← claim 2
  The process as claimed in claim 2 23, wherein the exposure to a controlled ﬂux of carbon atoms or carbon-containing radicals or carbon-containing ions is carried out by ion implantation.
4. 20
  Dependent← claim 2metal layerAl₂O₃SiO₂MgOspinel
  The process as claimed in claim 2 23, wherein the metal layer is produced by epitaxy, the substrate being an inert single-crystal substrate which may be of the sapphire or quartz type or made of magnesium oxide or a spinel.
5. 22
  Dependent← claim 2CoNiAuCu
  The controlled process as claimed in claim 2 23, wherein the metal is selected from a group consisting of cobalt, nickel, gold, copper, any type of transition metal, and noble metals.
4
Independentmetal layerCC
The process as claimed in claim -1 23, further comprising: an operation of chemically attacking the metal layer to detach the upper graphene ﬁlm and to expose the lower graphene ﬁlm; and a step of transferring the upper graphene ﬁlm to a second substrate.
1. 5
  Dependent← claim 4metal layerCC
  The process as claimed in claim 4, further comprising: placing the substrate comprising the lower graphene ﬁlm, the metal layer and the upper graphene ﬁlm in an enclosure in the presence of a ﬁrst solution for chemically etching the metal layer; positioning the second substrate facing the assembly formed by the two graphene ﬁlms and the metal layer; and ﬂowing a stream of a second solution to bring the upper graphene ﬁlm into contact with the second substrate after the metal layer has been chemically attacked.
2. 6
  Dependent← claim 4
  The process as claimed in claim 4, wherein the second substrate is made of a nonrefractory material of the glass or polymer type.
3. 11
  Dependent← claim 4, claim 5, claim 6, claim 7, claim 8, claim 9, claim 10
  The process as claimed in claim 4-23, wherein the exposure to a controlled ﬂux of carbon atoms or carbon-containing radicals or carbon-containing ions is carried out by ion implantation.
7
Independent
2 Application No. 13/124,413 Patent Docket No. 94356.21520 canceled
10
IndependentCH₄C₂H₂C₆H₆
The process as claimed in claim 123, wherein the exposure to a controlled ﬂux of carbon atoms or carbon-containing radicals or carbon-containing ions is carried out in a reactor using a gaseous precursor of the CH4, C₂H₂ or C₆H₆ type at a temperature of between about 450 ° C and about 900 °C.
1. 14
  Dependent← claim 10
  The process as claimed in claim 10, wherein a subsequent annealing step is carried out by means of a laser.
23
Independentmetal layerCCC
A controlled graphene ﬁlm growth process comprising: depositing a layer of metal on a surface of a substrate, wherein the metal of the metal layer is selected in response to the solubility of carbon in the metal; exposing the layer of metal to a controlled ﬂux of carbon atoms or carbon-containing radicals or carbon-containing ions at a ﬁrst temperature disposed along a phase diagram of the metal in order to raise the concentration of carbon in the layer of metal to a molar concentration threshold ratio C M/CM+Cc, where C M is the molar metal concentration in a metal/carbon mixture and Cc is a carbon solubility limit in said mixture at the ﬁrst temperature, wherein the layer of metal forms a homogenous solid solution of carbon and metal; increasing the carbon concentration in the metal/carbon layer by continuing to expose the metal/carbon layer to the controlled ﬂux of carbon atoms or carbon-containing radicals or carbon-containing ions at the ﬁrst temperature to modify the phase of the mixture into two phases, a metal phase and a graphite phase, wherein the carbon initially diﬀuses into the metal/carbon layer and then precipitates in response to the carbon concentration increasing above the molar concentration threshold ratio C M/CM+Cc and the precipitating carbon forms at least a lower graphene ﬁlm disposed between the metal/carbon layer and the surface and an upper graphene ﬁlm at the surface of the metal/carbon layer; eliminating the upper graphene ﬁlm; and eliminating the layer of metal.

Materials

Materials described outside the worked examples.

metal layer

Graphene Growth Catalyst Substrate

upper graphene film

Graphene Film Upper

Process steps

Additional fabrication and treatment steps described in the patent.

Cvd Growth

Step 1

Temperature

450, 900°C

Process details

notes:gaseous precursor type CH4, C₂H2, or C₆H₆

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Temperature	450–900 °C	—

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Method for the Controlled Growth of a Graphene Film | Matter42 Literature