Patent
US 10,167,572OF THE I NVENTION
Vijayen S. Veerasamy
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,167,572Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) A method of making a graphene thin film, the method comp ri sing: providing a back support substrate; disposing a catalyst thin film, directly or indirectly, on the back support substrate; introducing a hydrocarbon inclusive gas proximate to the catalyst thin film; heating the back support substrate to cause the hydrocarbon inclusive gas to at least partially separate the carbon in the hydrocarbon inclusive gas and promote graphene growth in and/or on the catalyst thin film; and SVG 12461346.03-02-2015.I₆SIVB₃NPXXIFW3.CLM11404749.16.150.1295.2088.1380.svg 0.283 6.46 Chemistry Black and white directly or indirectly, on an outermost surface of the catalyst thin film, in making the graphene thin film, said active cooling being performed in connection with an inert gas and in accordance with a no uniform and non liner oolin g temperature profile that, as a whole, is non-constant, non-uniform, and non-linear in speed, a nd cools the back substrate from 900 degrees C to 700 degrees C.
The method of claim 1, wherein the catalyst thin film has a substantially single-orientation large-grain crystal structure, the crystals in the catalyst thin film having a length along a major axis on the order of 10 s of microns.
The method of claim 1, wherein the catalyst thin film comprises metal.
The method of claim 1, wherein the hydrocarbon inclusive gas includes C₂H₂ gas.
The method of claim 1, wherein the hydrocarbon inclusive gas includes CH₄ and Ar gasses.
The method of claim 1, wherein the hydrocarbon inclusive gas is introduced at a pressure of 5-150 mTorr.
The method of claim 1, wherein the back support substrate is heated to a temperature of 800-900 degrees C during the heating.
The method of claim 1, wherein the cooling is performed using an inert gas.
(Cu rr ently Amended) The method of claim 1, further comprising: enhancing graphene visibility on the outmost surface of the catalyst thin film using-a-via phase contrast; and determining te when to stop the cooling based on the enhanced graphene visibility.
(Cu rr ently Amended) The method of claim 1, further comprising exposing etehing-dewn- at least a portion of the graphene thin film using-to hydrogen atom atems-a± § etchants in order to etch down at least the exposed portion of the graphene thin film.
The method of claim 1, wherein the graphene thin film is an n-level HEG graphene thin film, with n = 2-3.
The method of claim 1, wherein the cooling comprises a quenching process.
(Cu rr ently Amended) A method of hetero-epitaxially growing a graphene thin film in making a graphene thin film, the method comprising: providing a back support; disposing a metal catalyst thin film, directly or indirectly, on the back support substrate; introducing a hydrocarbon inclusive gas proximate to the metal catalyst thin film at a pressure of 5-150 mTorr; heating the back support substrate to a temperature greater than about 700 degrees C to cause the hydrocarbon inclusive gas to at least partially separate the carbon in the hydrocarbon inclusive gas; growing graphite on the metal catalyst thin film; millin g-exposin g the metal catalyst thin film to hydrogen atom etchants from a non-liquid source to form graphane using hydrogen atoms as; and further mi llin g-exposin g the graphane to further hydrogen atom etchants from the nonliquid source to form graphene, in making the graphene thin film.
The method of claim 16, wherein the catalyst thin film comprises at least one of: nickel, cobalt, iron, permalloy, a nickel-chromium alloy, copper, and combinations thereof.
The method of claim 16, wherein the hydrocarbon inclusive gas includes C₂H₂ gas, or CH₄ and Ar gasses. 19-20.
canceled
canceled
A method of making a graphene thin film, the method comp ri sing: providing a back support substrate; disposing a catalyst thin film, directly or indirectly, on the back support substrate, wherein the catalyst thin film comprises a nickel-chromium alloy, and wherein the amount of chromium is 3-15% of the nickel-chromium alloy; introducing a hydrocarbon inclusive gas proximate to the catalyst thin film; heating the back support substrate to cause the hydrocarbon inclusive gas to at least partially separate the carbon in the hydrocarbon inclusive gas and promote graphene growth in and/or on the catalyst thin film; and cooling the back support substrate to promote crystallization of graphene, directly or indirectly, on an outermost surface of the catalyst thin film, in making the graphene thin film, in connection with a quenching process.
The method of claim 21, wherein the catalyst thin film has a substantially single-orientation large-grain crystal structure, the crystals in the catalyst thin film having a length along a major axis on the order of 10 s of microns.
(Cu rr ently Amended) The method of claim 21, wherein the cooling is performed in accordance with a nen-inear- temperature profile that involves active cooling at a non-constant and non-linear rate over the entirety of the cooling. -5- 2471757
Materials described outside the worked examples.
graphene thin film
catalyst thin film
hydrocarbon inclusive gas
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
sheet resistance less than 150 ohms/square | ≤ 150 ohms/square | graphene thin film |
transmission reduced by less than 3% per atomic layer across visible and infrared spectra | ≤ 3 % reduction per atomic layer |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,167,572Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) A method of making a graphene thin film, the method comp ri sing: providing a back support substrate; disposing a catalyst thin film, directly or indirectly, on the back support substrate; introducing a hydrocarbon inclusive gas proximate to the catalyst thin film; heating the back support substrate to cause the hydrocarbon inclusive gas to at least partially separate the carbon in the hydrocarbon inclusive gas and promote graphene growth in and/or on the catalyst thin film; and SVG 12461346.03-02-2015.I₆SIVB₃NPXXIFW3.CLM11404749.16.150.1295.2088.1380.svg 0.283 6.46 Chemistry Black and white directly or indirectly, on an outermost surface of the catalyst thin film, in making the graphene thin film, said active cooling being performed in connection with an inert gas and in accordance with a no uniform and non liner oolin g temperature profile that, as a whole, is non-constant, non-uniform, and non-linear in speed, a nd cools the back substrate from 900 degrees C to 700 degrees C.
The method of claim 1, wherein the catalyst thin film has a substantially single-orientation large-grain crystal structure, the crystals in the catalyst thin film having a length along a major axis on the order of 10 s of microns.
The method of claim 1, wherein the catalyst thin film comprises metal.
The method of claim 1, wherein the hydrocarbon inclusive gas includes C₂H₂ gas.
The method of claim 1, wherein the hydrocarbon inclusive gas includes CH₄ and Ar gasses.
The method of claim 1, wherein the hydrocarbon inclusive gas is introduced at a pressure of 5-150 mTorr.
The method of claim 1, wherein the back support substrate is heated to a temperature of 800-900 degrees C during the heating.
The method of claim 1, wherein the cooling is performed using an inert gas.
(Cu rr ently Amended) The method of claim 1, further comprising: enhancing graphene visibility on the outmost surface of the catalyst thin film using-a-via phase contrast; and determining te when to stop the cooling based on the enhanced graphene visibility.
(Cu rr ently Amended) The method of claim 1, further comprising exposing etehing-dewn- at least a portion of the graphene thin film using-to hydrogen atom atems-a± § etchants in order to etch down at least the exposed portion of the graphene thin film.
The method of claim 1, wherein the graphene thin film is an n-level HEG graphene thin film, with n = 2-3.
The method of claim 1, wherein the cooling comprises a quenching process.
(Cu rr ently Amended) A method of hetero-epitaxially growing a graphene thin film in making a graphene thin film, the method comprising: providing a back support; disposing a metal catalyst thin film, directly or indirectly, on the back support substrate; introducing a hydrocarbon inclusive gas proximate to the metal catalyst thin film at a pressure of 5-150 mTorr; heating the back support substrate to a temperature greater than about 700 degrees C to cause the hydrocarbon inclusive gas to at least partially separate the carbon in the hydrocarbon inclusive gas; growing graphite on the metal catalyst thin film; millin g-exposin g the metal catalyst thin film to hydrogen atom etchants from a non-liquid source to form graphane using hydrogen atoms as; and further mi llin g-exposin g the graphane to further hydrogen atom etchants from the nonliquid source to form graphene, in making the graphene thin film.
The method of claim 16, wherein the catalyst thin film comprises at least one of: nickel, cobalt, iron, permalloy, a nickel-chromium alloy, copper, and combinations thereof.
The method of claim 16, wherein the hydrocarbon inclusive gas includes C₂H₂ gas, or CH₄ and Ar gasses. 19-20.
canceled
canceled
A method of making a graphene thin film, the method comp ri sing: providing a back support substrate; disposing a catalyst thin film, directly or indirectly, on the back support substrate, wherein the catalyst thin film comprises a nickel-chromium alloy, and wherein the amount of chromium is 3-15% of the nickel-chromium alloy; introducing a hydrocarbon inclusive gas proximate to the catalyst thin film; heating the back support substrate to cause the hydrocarbon inclusive gas to at least partially separate the carbon in the hydrocarbon inclusive gas and promote graphene growth in and/or on the catalyst thin film; and cooling the back support substrate to promote crystallization of graphene, directly or indirectly, on an outermost surface of the catalyst thin film, in making the graphene thin film, in connection with a quenching process.
The method of claim 21, wherein the catalyst thin film has a substantially single-orientation large-grain crystal structure, the crystals in the catalyst thin film having a length along a major axis on the order of 10 s of microns.
(Cu rr ently Amended) The method of claim 21, wherein the cooling is performed in accordance with a nen-inear- temperature profile that involves active cooling at a non-constant and non-linear rate over the entirety of the cooling. -5- 2471757
Materials described outside the worked examples.
graphene thin film
catalyst thin film
hydrocarbon inclusive gas
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
sheet resistance less than 150 ohms/square | ≤ 150 ohms/square | graphene thin film |
transmission reduced by less than 3% per atomic layer across visible and infrared spectra | ≤ 3 % reduction per atomic layer |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,167,572Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) A method of making a graphene thin film, the method comp ri sing: providing a back support substrate; disposing a catalyst thin film, directly or indirectly, on the back support substrate; introducing a hydrocarbon inclusive gas proximate to the catalyst thin film; heating the back support substrate to cause the hydrocarbon inclusive gas to at least partially separate the carbon in the hydrocarbon inclusive gas and promote graphene growth in and/or on the catalyst thin film; and SVG 12461346.03-02-2015.I₆SIVB₃NPXXIFW3.CLM11404749.16.150.1295.2088.1380.svg 0.283 6.46 Chemistry Black and white directly or indirectly, on an outermost surface of the catalyst thin film, in making the graphene thin film, said active cooling being performed in connection with an inert gas and in accordance with a no uniform and non liner oolin g temperature profile that, as a whole, is non-constant, non-uniform, and non-linear in speed, a nd cools the back substrate from 900 degrees C to 700 degrees C.
The method of claim 1, wherein the catalyst thin film has a substantially single-orientation large-grain crystal structure, the crystals in the catalyst thin film having a length along a major axis on the order of 10 s of microns.
The method of claim 1, wherein the catalyst thin film comprises metal.
The method of claim 1, wherein the hydrocarbon inclusive gas includes C₂H₂ gas.
The method of claim 1, wherein the hydrocarbon inclusive gas includes CH₄ and Ar gasses.
The method of claim 1, wherein the hydrocarbon inclusive gas is introduced at a pressure of 5-150 mTorr.
The method of claim 1, wherein the back support substrate is heated to a temperature of 800-900 degrees C during the heating.
The method of claim 1, wherein the cooling is performed using an inert gas.
(Cu rr ently Amended) The method of claim 1, further comprising: enhancing graphene visibility on the outmost surface of the catalyst thin film using-a-via phase contrast; and determining te when to stop the cooling based on the enhanced graphene visibility.
(Cu rr ently Amended) The method of claim 1, further comprising exposing etehing-dewn- at least a portion of the graphene thin film using-to hydrogen atom atems-a± § etchants in order to etch down at least the exposed portion of the graphene thin film.
The method of claim 1, wherein the graphene thin film is an n-level HEG graphene thin film, with n = 2-3.
The method of claim 1, wherein the cooling comprises a quenching process.
(Cu rr ently Amended) A method of hetero-epitaxially growing a graphene thin film in making a graphene thin film, the method comprising: providing a back support; disposing a metal catalyst thin film, directly or indirectly, on the back support substrate; introducing a hydrocarbon inclusive gas proximate to the metal catalyst thin film at a pressure of 5-150 mTorr; heating the back support substrate to a temperature greater than about 700 degrees C to cause the hydrocarbon inclusive gas to at least partially separate the carbon in the hydrocarbon inclusive gas; growing graphite on the metal catalyst thin film; millin g-exposin g the metal catalyst thin film to hydrogen atom etchants from a non-liquid source to form graphane using hydrogen atoms as; and further mi llin g-exposin g the graphane to further hydrogen atom etchants from the nonliquid source to form graphene, in making the graphene thin film.
The method of claim 16, wherein the catalyst thin film comprises at least one of: nickel, cobalt, iron, permalloy, a nickel-chromium alloy, copper, and combinations thereof.
The method of claim 16, wherein the hydrocarbon inclusive gas includes C₂H₂ gas, or CH₄ and Ar gasses. 19-20.
canceled
canceled
A method of making a graphene thin film, the method comp ri sing: providing a back support substrate; disposing a catalyst thin film, directly or indirectly, on the back support substrate, wherein the catalyst thin film comprises a nickel-chromium alloy, and wherein the amount of chromium is 3-15% of the nickel-chromium alloy; introducing a hydrocarbon inclusive gas proximate to the catalyst thin film; heating the back support substrate to cause the hydrocarbon inclusive gas to at least partially separate the carbon in the hydrocarbon inclusive gas and promote graphene growth in and/or on the catalyst thin film; and cooling the back support substrate to promote crystallization of graphene, directly or indirectly, on an outermost surface of the catalyst thin film, in making the graphene thin film, in connection with a quenching process.
The method of claim 21, wherein the catalyst thin film has a substantially single-orientation large-grain crystal structure, the crystals in the catalyst thin film having a length along a major axis on the order of 10 s of microns.
(Cu rr ently Amended) The method of claim 21, wherein the cooling is performed in accordance with a nen-inear- temperature profile that involves active cooling at a non-constant and non-linear rate over the entirety of the cooling. -5- 2471757
Materials described outside the worked examples.
graphene thin film
catalyst thin film
hydrocarbon inclusive gas
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
sheet resistance less than 150 ohms/square | ≤ 150 ohms/square | graphene thin film |
transmission reduced by less than 3% per atomic layer across visible and infrared spectra | ≤ 3 % reduction per atomic layer |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,167,572Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) A method of making a graphene thin film, the method comp ri sing: providing a back support substrate; disposing a catalyst thin film, directly or indirectly, on the back support substrate; introducing a hydrocarbon inclusive gas proximate to the catalyst thin film; heating the back support substrate to cause the hydrocarbon inclusive gas to at least partially separate the carbon in the hydrocarbon inclusive gas and promote graphene growth in and/or on the catalyst thin film; and SVG 12461346.03-02-2015.I₆SIVB₃NPXXIFW3.CLM11404749.16.150.1295.2088.1380.svg 0.283 6.46 Chemistry Black and white directly or indirectly, on an outermost surface of the catalyst thin film, in making the graphene thin film, said active cooling being performed in connection with an inert gas and in accordance with a no uniform and non liner oolin g temperature profile that, as a whole, is non-constant, non-uniform, and non-linear in speed, a nd cools the back substrate from 900 degrees C to 700 degrees C.
The method of claim 1, wherein the catalyst thin film has a substantially single-orientation large-grain crystal structure, the crystals in the catalyst thin film having a length along a major axis on the order of 10 s of microns.
The method of claim 1, wherein the catalyst thin film comprises metal.
The method of claim 1, wherein the hydrocarbon inclusive gas includes C₂H₂ gas.
The method of claim 1, wherein the hydrocarbon inclusive gas includes CH₄ and Ar gasses.
The method of claim 1, wherein the hydrocarbon inclusive gas is introduced at a pressure of 5-150 mTorr.
The method of claim 1, wherein the back support substrate is heated to a temperature of 800-900 degrees C during the heating.
The method of claim 1, wherein the cooling is performed using an inert gas.
(Cu rr ently Amended) The method of claim 1, further comprising: enhancing graphene visibility on the outmost surface of the catalyst thin film using-a-via phase contrast; and determining te when to stop the cooling based on the enhanced graphene visibility.
(Cu rr ently Amended) The method of claim 1, further comprising exposing etehing-dewn- at least a portion of the graphene thin film using-to hydrogen atom atems-a± § etchants in order to etch down at least the exposed portion of the graphene thin film.
The method of claim 1, wherein the graphene thin film is an n-level HEG graphene thin film, with n = 2-3.
The method of claim 1, wherein the cooling comprises a quenching process.
(Cu rr ently Amended) A method of hetero-epitaxially growing a graphene thin film in making a graphene thin film, the method comprising: providing a back support; disposing a metal catalyst thin film, directly or indirectly, on the back support substrate; introducing a hydrocarbon inclusive gas proximate to the metal catalyst thin film at a pressure of 5-150 mTorr; heating the back support substrate to a temperature greater than about 700 degrees C to cause the hydrocarbon inclusive gas to at least partially separate the carbon in the hydrocarbon inclusive gas; growing graphite on the metal catalyst thin film; millin g-exposin g the metal catalyst thin film to hydrogen atom etchants from a non-liquid source to form graphane using hydrogen atoms as; and further mi llin g-exposin g the graphane to further hydrogen atom etchants from the nonliquid source to form graphene, in making the graphene thin film.
The method of claim 16, wherein the catalyst thin film comprises at least one of: nickel, cobalt, iron, permalloy, a nickel-chromium alloy, copper, and combinations thereof.
The method of claim 16, wherein the hydrocarbon inclusive gas includes C₂H₂ gas, or CH₄ and Ar gasses. 19-20.
canceled
canceled
A method of making a graphene thin film, the method comp ri sing: providing a back support substrate; disposing a catalyst thin film, directly or indirectly, on the back support substrate, wherein the catalyst thin film comprises a nickel-chromium alloy, and wherein the amount of chromium is 3-15% of the nickel-chromium alloy; introducing a hydrocarbon inclusive gas proximate to the catalyst thin film; heating the back support substrate to cause the hydrocarbon inclusive gas to at least partially separate the carbon in the hydrocarbon inclusive gas and promote graphene growth in and/or on the catalyst thin film; and cooling the back support substrate to promote crystallization of graphene, directly or indirectly, on an outermost surface of the catalyst thin film, in making the graphene thin film, in connection with a quenching process.
The method of claim 21, wherein the catalyst thin film has a substantially single-orientation large-grain crystal structure, the crystals in the catalyst thin film having a length along a major axis on the order of 10 s of microns.
(Cu rr ently Amended) The method of claim 21, wherein the cooling is performed in accordance with a nen-inear- temperature profile that involves active cooling at a non-constant and non-linear rate over the entirety of the cooling. -5- 2471757
Materials described outside the worked examples.
graphene thin film
catalyst thin film
hydrocarbon inclusive gas
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
sheet resistance less than 150 ohms/square | ≤ 150 ohms/square | graphene thin film |
transmission reduced by less than 3% per atomic layer across visible and infrared spectra | ≤ 3 % reduction per atomic layer |
Related documents with shared materials, methods, properties, or citations.
nickel
Ni
cobalt
Co
iron
Fe
permalloy
nickel-chromium alloy
copper
Cu
acetylene
C₂H₂
methane
CH₄
argon
Ar
polymer-based material
hydrogen atom etchants
H
graphite
graphane
HEG graphene thin film
graphene thin film |
Thickness | 50–1000 nm | — |
Thickness | 75–750 nm | — |
Thickness | 100–500 nm | — |
Pressure | 5–150 mTorr | — |
Pressure | 10–100 mTorr | — |
— | 10–200 ev | — |
— | 20–50 ev | — |
— | 20–40 ev | — |
— | 10–1000 ev | — |
— | 20–500 ev | — |
— | 20–100 ev | — |
Thickness | 500–3000 nm | — |
METHOD AND SYSTEM FOR PRODUCING GRAPHENE AND FUNCTIONALIZED GRAPHENE
nickel
Ni
cobalt
Co
iron
Fe
permalloy
nickel-chromium alloy
copper
Cu
acetylene
C₂H₂
methane
CH₄
argon
Ar
polymer-based material
hydrogen atom etchants
H
graphite
graphane
HEG graphene thin film
graphene thin film |
Thickness | 50–1000 nm | — |
Thickness | 75–750 nm | — |
Thickness | 100–500 nm | — |
Pressure | 5–150 mTorr | — |
Pressure | 10–100 mTorr | — |
— | 10–200 ev | — |
— | 20–50 ev | — |
— | 20–40 ev | — |
— | 10–1000 ev | — |
— | 20–500 ev | — |
— | 20–100 ev | — |
Thickness | 500–3000 nm | — |
METHOD AND SYSTEM FOR PRODUCING GRAPHENE AND FUNCTIONALIZED GRAPHENE
nickel
Ni
cobalt
Co
iron
Fe
permalloy
nickel-chromium alloy
copper
Cu
acetylene
C₂H₂
methane
CH₄
argon
Ar
polymer-based material
hydrogen atom etchants
H
graphite
graphane
HEG graphene thin film
graphene thin film |
Thickness | 50–1000 nm | — |
Thickness | 75–750 nm | — |
Thickness | 100–500 nm | — |
Pressure | 5–150 mTorr | — |
Pressure | 10–100 mTorr | — |
— | 10–200 ev | — |
— | 20–50 ev | — |
— | 20–40 ev | — |
— | 10–1000 ev | — |
— | 20–500 ev | — |
— | 20–100 ev | — |
Thickness | 500–3000 nm | — |
METHOD AND SYSTEM FOR PRODUCING GRAPHENE AND FUNCTIONALIZED GRAPHENE
nickel
Ni
cobalt
Co
iron
Fe
permalloy
nickel-chromium alloy
copper
Cu
acetylene
C₂H₂
methane
CH₄
argon
Ar
polymer-based material
hydrogen atom etchants
H
graphite
graphane
HEG graphene thin film
graphene thin film |
Thickness | 50–1000 nm | — |
Thickness | 75–750 nm | — |
Thickness | 100–500 nm | — |
Pressure | 5–150 mTorr | — |
Pressure | 10–100 mTorr | — |
— | 10–200 ev | — |
— | 20–50 ev | — |
— | 20–40 ev | — |
— | 10–1000 ev | — |
— | 20–500 ev | — |
— | 20–100 ev | — |
Thickness | 500–3000 nm | — |