Patent
US 9,987,830METHOD FOR PROCESSING A CARRIER AND METHOD FOR TRANSFERRING A GRAPHENE LAYER
Matthias Koenig
US
Copyright © 2026 Matter42. All rights reserved.
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Atlas literature
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US 9,987,830Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG.1 illustrates a schematic flow diagram of a method 100 for processing a carrier, according to various embodiments. The method 100 may include: in 110, …
FIG.2 illustrates a schematic flow diagram of a method 200 for processing a carrier, according to various embodiments, e.g. a method 200 for transferring a two- …
FIG.3 illustrates a schematic flow diagram of a method 300 for processing a carrier, according to various embodiments, e.g. a method 300 for transferring a …
FIG.4 A illustrates a carrier arrangement 401a in a schematic cross sectional view, e.g. after process 110 of method 100 has been carried out, at an initial …
FIG.5C illustrate a carrier arrangement 501a, 501b, 501c in a schematic cross sectional view respectively, e.g. at various stages during method 100, method …
FIG.6C. Illustratively, the first auxiliary layer 608a may be a soft mask that has been patterned by lithographic processes, as typically used in semiconductor …
FIG. 7 shows a schematic view of a carrier, according to various embodiments;
FIG.8 illustrates a top view of a copper layer 402 having a thickness less than about 1 m, e.g in the range from about 0.1 m to about 0.5 a m, so that holes …
FIG.9C, the removing of the auxiliary layer structure 408 and, therefore, the transferring of the two-dimensional layer 404 to the carrier 400 may be carried …
FIG.10. For a better illustration, the two-dimensional layer 404 is illustrated in the figures spaced apart from the support layer 402, the auxiliary layer …
FIG. 11 shows a schematic view of a carrier after processing, according to various embodiments. Description [0005] The following detailed description refers to …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for processing a carrier, the method comprising: forming a layer structure over the carrier, the layer structure comprising a support layer and a two-dimensional layer over the support layer; wherein the layer structure has at least one opening that exposes a portion of the carrier; forming an auxiliary layer structure, wherein the auxiliary layer structure at least partially covers the layer structure and at least partially fills the at least one opening; and removing the support layer of the layer structure.
The method according to claim 1; wherein the two-dimensional layer comprises at least one graphene sheet.
The method according to claim 1; wherein the support layer is at least one of an electrically conductive support layer or an electrically semi-conductive support layer.
The method according to claim 1; wherein the support layer has a thickness greater than 0.5 p m. 43
The method according to claim 1; wherein the carrier comprises dielectric material.
The method according to claim 1; wherein the carrier comprises at least one embedded electrode exposed at a surface of the carrier facing the two-dimensional layer.
The method according to claim 1, further comprising: at least one of deforming or at least partially removing the auxiliary layer structure after removing the support layer.
The method according to claim 1; wherein the auxiliary layer structure comprises a polymer.
The method according to claim 1; wherein forming the auxiliary layer structure comprises contacting the exposed portion of the carrier by a portion of the auxiliary layer structure.
The method according to claim 1; wherein forming the layer structure over the carrier comprises: forming the support layer over the carrier; forming the two-dimensional layer over the support layer; and 44 partially removing the two-dimensional layer and the support layer to provide the at least one opening that exposes the portion of the carrier.
The method according to claim 1; wherein forming the layer structure over the carrier comprises: forming the support layer partially over the carrier, so that the at least one opening is provided in the support layer that exposes the portion of the carrier; and forming the two-dimensional layer over the support layer.
A method for transferring a two-dimensional layer that is disposed on a surface of a first layer to a surface of a second layer, the method comprising: 45 forming a transfer layer structure that at least partially covers the two- dimensional layer and that at least partially covers at least one sidewall of the first layer; bringing the surface of the second layer in physical contact with the transfer layer structure, wherein the first layer is disposed between the second layer and the two-dimensional layer; and, subsequently, removing the first layer; and, subsequently, at least one of deforming or removing the transfer layer structure to bring the two-dimensional layer in physical contact with the surface of the second layer.
The method according to claim 14; wherein the two-dimensional layer comprises at least one graphene sheet.
The method according to claim 14; wherein the first layer is at least one of an electrically conductive layer or an electrically semi-conductive layer.
The method according to claim 14; wherein the second layer is at least one of a dielectric layer disposed on a wafer or a dielectric wafer.
The method according to claim 14; 46 wherein the transfer layer structure comprises a transfer material that allows selectively removing the first layer.
The method according to claim 14; wherein the at least one sidewall of the first layer is at least one of an inner sidewall of at least one opening disposed in the first layer or at least one outer sidewall of the first layer.
A method for transferring a graphene layer that is disposed on a surface of a catalytic layer to a surface of a dielectric layer that is in physical contact with the catalytic layer, the method comprising: forming at least one opening that extends through the graphene layer and through the catalytic layer to the surface of the dielectric layer; forming a transfer layer structure that covers the graphene layer and fills the least one opening, wherein the transfer layer structure is in physical contact with the dielectric layer; and, subsequently, removing the catalytic layer; and, subsequently, at least one of deforming or removing the transfer layer structure to bring the graphene layer in physical contact with the surface of the dielectric layer. 47
Materials described outside the worked examples.
two-dimensional layer
support layer
Measurements and analyses referenced in the patent, with their drawing references.
FIG.6C. Illustratively, the first auxiliary layer 608a may be a soft mask that has been patterned by lithographic processes, as typically used in semiconductor …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,987,830Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG.1 illustrates a schematic flow diagram of a method 100 for processing a carrier, according to various embodiments. The method 100 may include: in 110, …
FIG.2 illustrates a schematic flow diagram of a method 200 for processing a carrier, according to various embodiments, e.g. a method 200 for transferring a two- …
FIG.3 illustrates a schematic flow diagram of a method 300 for processing a carrier, according to various embodiments, e.g. a method 300 for transferring a …
FIG.4 A illustrates a carrier arrangement 401a in a schematic cross sectional view, e.g. after process 110 of method 100 has been carried out, at an initial …
FIG.5C illustrate a carrier arrangement 501a, 501b, 501c in a schematic cross sectional view respectively, e.g. at various stages during method 100, method …
FIG.6C. Illustratively, the first auxiliary layer 608a may be a soft mask that has been patterned by lithographic processes, as typically used in semiconductor …
FIG. 7 shows a schematic view of a carrier, according to various embodiments;
FIG.8 illustrates a top view of a copper layer 402 having a thickness less than about 1 m, e.g in the range from about 0.1 m to about 0.5 a m, so that holes …
FIG.9C, the removing of the auxiliary layer structure 408 and, therefore, the transferring of the two-dimensional layer 404 to the carrier 400 may be carried …
FIG.10. For a better illustration, the two-dimensional layer 404 is illustrated in the figures spaced apart from the support layer 402, the auxiliary layer …
FIG. 11 shows a schematic view of a carrier after processing, according to various embodiments. Description [0005] The following detailed description refers to …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for processing a carrier, the method comprising: forming a layer structure over the carrier, the layer structure comprising a support layer and a two-dimensional layer over the support layer; wherein the layer structure has at least one opening that exposes a portion of the carrier; forming an auxiliary layer structure, wherein the auxiliary layer structure at least partially covers the layer structure and at least partially fills the at least one opening; and removing the support layer of the layer structure.
The method according to claim 1; wherein the two-dimensional layer comprises at least one graphene sheet.
The method according to claim 1; wherein the support layer is at least one of an electrically conductive support layer or an electrically semi-conductive support layer.
The method according to claim 1; wherein the support layer has a thickness greater than 0.5 p m. 43
The method according to claim 1; wherein the carrier comprises dielectric material.
The method according to claim 1; wherein the carrier comprises at least one embedded electrode exposed at a surface of the carrier facing the two-dimensional layer.
The method according to claim 1, further comprising: at least one of deforming or at least partially removing the auxiliary layer structure after removing the support layer.
The method according to claim 1; wherein the auxiliary layer structure comprises a polymer.
The method according to claim 1; wherein forming the auxiliary layer structure comprises contacting the exposed portion of the carrier by a portion of the auxiliary layer structure.
The method according to claim 1; wherein forming the layer structure over the carrier comprises: forming the support layer over the carrier; forming the two-dimensional layer over the support layer; and 44 partially removing the two-dimensional layer and the support layer to provide the at least one opening that exposes the portion of the carrier.
The method according to claim 1; wherein forming the layer structure over the carrier comprises: forming the support layer partially over the carrier, so that the at least one opening is provided in the support layer that exposes the portion of the carrier; and forming the two-dimensional layer over the support layer.
A method for transferring a two-dimensional layer that is disposed on a surface of a first layer to a surface of a second layer, the method comprising: 45 forming a transfer layer structure that at least partially covers the two- dimensional layer and that at least partially covers at least one sidewall of the first layer; bringing the surface of the second layer in physical contact with the transfer layer structure, wherein the first layer is disposed between the second layer and the two-dimensional layer; and, subsequently, removing the first layer; and, subsequently, at least one of deforming or removing the transfer layer structure to bring the two-dimensional layer in physical contact with the surface of the second layer.
The method according to claim 14; wherein the two-dimensional layer comprises at least one graphene sheet.
The method according to claim 14; wherein the first layer is at least one of an electrically conductive layer or an electrically semi-conductive layer.
The method according to claim 14; wherein the second layer is at least one of a dielectric layer disposed on a wafer or a dielectric wafer.
The method according to claim 14; 46 wherein the transfer layer structure comprises a transfer material that allows selectively removing the first layer.
The method according to claim 14; wherein the at least one sidewall of the first layer is at least one of an inner sidewall of at least one opening disposed in the first layer or at least one outer sidewall of the first layer.
A method for transferring a graphene layer that is disposed on a surface of a catalytic layer to a surface of a dielectric layer that is in physical contact with the catalytic layer, the method comprising: forming at least one opening that extends through the graphene layer and through the catalytic layer to the surface of the dielectric layer; forming a transfer layer structure that covers the graphene layer and fills the least one opening, wherein the transfer layer structure is in physical contact with the dielectric layer; and, subsequently, removing the catalytic layer; and, subsequently, at least one of deforming or removing the transfer layer structure to bring the graphene layer in physical contact with the surface of the dielectric layer. 47
Materials described outside the worked examples.
two-dimensional layer
support layer
Measurements and analyses referenced in the patent, with their drawing references.
FIG.6C. Illustratively, the first auxiliary layer 608a may be a soft mask that has been patterned by lithographic processes, as typically used in semiconductor …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,987,830Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG.1 illustrates a schematic flow diagram of a method 100 for processing a carrier, according to various embodiments. The method 100 may include: in 110, …
FIG.2 illustrates a schematic flow diagram of a method 200 for processing a carrier, according to various embodiments, e.g. a method 200 for transferring a two- …
FIG.3 illustrates a schematic flow diagram of a method 300 for processing a carrier, according to various embodiments, e.g. a method 300 for transferring a …
FIG.4 A illustrates a carrier arrangement 401a in a schematic cross sectional view, e.g. after process 110 of method 100 has been carried out, at an initial …
FIG.5C illustrate a carrier arrangement 501a, 501b, 501c in a schematic cross sectional view respectively, e.g. at various stages during method 100, method …
FIG.6C. Illustratively, the first auxiliary layer 608a may be a soft mask that has been patterned by lithographic processes, as typically used in semiconductor …
FIG. 7 shows a schematic view of a carrier, according to various embodiments;
FIG.8 illustrates a top view of a copper layer 402 having a thickness less than about 1 m, e.g in the range from about 0.1 m to about 0.5 a m, so that holes …
FIG.9C, the removing of the auxiliary layer structure 408 and, therefore, the transferring of the two-dimensional layer 404 to the carrier 400 may be carried …
FIG.10. For a better illustration, the two-dimensional layer 404 is illustrated in the figures spaced apart from the support layer 402, the auxiliary layer …
FIG. 11 shows a schematic view of a carrier after processing, according to various embodiments. Description [0005] The following detailed description refers to …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for processing a carrier, the method comprising: forming a layer structure over the carrier, the layer structure comprising a support layer and a two-dimensional layer over the support layer; wherein the layer structure has at least one opening that exposes a portion of the carrier; forming an auxiliary layer structure, wherein the auxiliary layer structure at least partially covers the layer structure and at least partially fills the at least one opening; and removing the support layer of the layer structure.
The method according to claim 1; wherein the two-dimensional layer comprises at least one graphene sheet.
The method according to claim 1; wherein the support layer is at least one of an electrically conductive support layer or an electrically semi-conductive support layer.
The method according to claim 1; wherein the support layer has a thickness greater than 0.5 p m. 43
The method according to claim 1; wherein the carrier comprises dielectric material.
The method according to claim 1; wherein the carrier comprises at least one embedded electrode exposed at a surface of the carrier facing the two-dimensional layer.
The method according to claim 1, further comprising: at least one of deforming or at least partially removing the auxiliary layer structure after removing the support layer.
The method according to claim 1; wherein the auxiliary layer structure comprises a polymer.
The method according to claim 1; wherein forming the auxiliary layer structure comprises contacting the exposed portion of the carrier by a portion of the auxiliary layer structure.
The method according to claim 1; wherein forming the layer structure over the carrier comprises: forming the support layer over the carrier; forming the two-dimensional layer over the support layer; and 44 partially removing the two-dimensional layer and the support layer to provide the at least one opening that exposes the portion of the carrier.
The method according to claim 1; wherein forming the layer structure over the carrier comprises: forming the support layer partially over the carrier, so that the at least one opening is provided in the support layer that exposes the portion of the carrier; and forming the two-dimensional layer over the support layer.
A method for transferring a two-dimensional layer that is disposed on a surface of a first layer to a surface of a second layer, the method comprising: 45 forming a transfer layer structure that at least partially covers the two- dimensional layer and that at least partially covers at least one sidewall of the first layer; bringing the surface of the second layer in physical contact with the transfer layer structure, wherein the first layer is disposed between the second layer and the two-dimensional layer; and, subsequently, removing the first layer; and, subsequently, at least one of deforming or removing the transfer layer structure to bring the two-dimensional layer in physical contact with the surface of the second layer.
The method according to claim 14; wherein the two-dimensional layer comprises at least one graphene sheet.
The method according to claim 14; wherein the first layer is at least one of an electrically conductive layer or an electrically semi-conductive layer.
The method according to claim 14; wherein the second layer is at least one of a dielectric layer disposed on a wafer or a dielectric wafer.
The method according to claim 14; 46 wherein the transfer layer structure comprises a transfer material that allows selectively removing the first layer.
The method according to claim 14; wherein the at least one sidewall of the first layer is at least one of an inner sidewall of at least one opening disposed in the first layer or at least one outer sidewall of the first layer.
A method for transferring a graphene layer that is disposed on a surface of a catalytic layer to a surface of a dielectric layer that is in physical contact with the catalytic layer, the method comprising: forming at least one opening that extends through the graphene layer and through the catalytic layer to the surface of the dielectric layer; forming a transfer layer structure that covers the graphene layer and fills the least one opening, wherein the transfer layer structure is in physical contact with the dielectric layer; and, subsequently, removing the catalytic layer; and, subsequently, at least one of deforming or removing the transfer layer structure to bring the graphene layer in physical contact with the surface of the dielectric layer. 47
Materials described outside the worked examples.
two-dimensional layer
support layer
Measurements and analyses referenced in the patent, with their drawing references.
FIG.6C. Illustratively, the first auxiliary layer 608a may be a soft mask that has been patterned by lithographic processes, as typically used in semiconductor …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,987,830Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG.1 illustrates a schematic flow diagram of a method 100 for processing a carrier, according to various embodiments. The method 100 may include: in 110, …
FIG.2 illustrates a schematic flow diagram of a method 200 for processing a carrier, according to various embodiments, e.g. a method 200 for transferring a two- …
FIG.3 illustrates a schematic flow diagram of a method 300 for processing a carrier, according to various embodiments, e.g. a method 300 for transferring a …
FIG.4 A illustrates a carrier arrangement 401a in a schematic cross sectional view, e.g. after process 110 of method 100 has been carried out, at an initial …
FIG.5C illustrate a carrier arrangement 501a, 501b, 501c in a schematic cross sectional view respectively, e.g. at various stages during method 100, method …
FIG.6C. Illustratively, the first auxiliary layer 608a may be a soft mask that has been patterned by lithographic processes, as typically used in semiconductor …
FIG. 7 shows a schematic view of a carrier, according to various embodiments;
FIG.8 illustrates a top view of a copper layer 402 having a thickness less than about 1 m, e.g in the range from about 0.1 m to about 0.5 a m, so that holes …
FIG.9C, the removing of the auxiliary layer structure 408 and, therefore, the transferring of the two-dimensional layer 404 to the carrier 400 may be carried …
FIG.10. For a better illustration, the two-dimensional layer 404 is illustrated in the figures spaced apart from the support layer 402, the auxiliary layer …
FIG. 11 shows a schematic view of a carrier after processing, according to various embodiments. Description [0005] The following detailed description refers to …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for processing a carrier, the method comprising: forming a layer structure over the carrier, the layer structure comprising a support layer and a two-dimensional layer over the support layer; wherein the layer structure has at least one opening that exposes a portion of the carrier; forming an auxiliary layer structure, wherein the auxiliary layer structure at least partially covers the layer structure and at least partially fills the at least one opening; and removing the support layer of the layer structure.
The method according to claim 1; wherein the two-dimensional layer comprises at least one graphene sheet.
The method according to claim 1; wherein the support layer is at least one of an electrically conductive support layer or an electrically semi-conductive support layer.
The method according to claim 1; wherein the support layer has a thickness greater than 0.5 p m. 43
The method according to claim 1; wherein the carrier comprises dielectric material.
The method according to claim 1; wherein the carrier comprises at least one embedded electrode exposed at a surface of the carrier facing the two-dimensional layer.
The method according to claim 1, further comprising: at least one of deforming or at least partially removing the auxiliary layer structure after removing the support layer.
The method according to claim 1; wherein the auxiliary layer structure comprises a polymer.
The method according to claim 1; wherein forming the auxiliary layer structure comprises contacting the exposed portion of the carrier by a portion of the auxiliary layer structure.
The method according to claim 1; wherein forming the layer structure over the carrier comprises: forming the support layer over the carrier; forming the two-dimensional layer over the support layer; and 44 partially removing the two-dimensional layer and the support layer to provide the at least one opening that exposes the portion of the carrier.
The method according to claim 1; wherein forming the layer structure over the carrier comprises: forming the support layer partially over the carrier, so that the at least one opening is provided in the support layer that exposes the portion of the carrier; and forming the two-dimensional layer over the support layer.
A method for transferring a two-dimensional layer that is disposed on a surface of a first layer to a surface of a second layer, the method comprising: 45 forming a transfer layer structure that at least partially covers the two- dimensional layer and that at least partially covers at least one sidewall of the first layer; bringing the surface of the second layer in physical contact with the transfer layer structure, wherein the first layer is disposed between the second layer and the two-dimensional layer; and, subsequently, removing the first layer; and, subsequently, at least one of deforming or removing the transfer layer structure to bring the two-dimensional layer in physical contact with the surface of the second layer.
The method according to claim 14; wherein the two-dimensional layer comprises at least one graphene sheet.
The method according to claim 14; wherein the first layer is at least one of an electrically conductive layer or an electrically semi-conductive layer.
The method according to claim 14; wherein the second layer is at least one of a dielectric layer disposed on a wafer or a dielectric wafer.
The method according to claim 14; 46 wherein the transfer layer structure comprises a transfer material that allows selectively removing the first layer.
The method according to claim 14; wherein the at least one sidewall of the first layer is at least one of an inner sidewall of at least one opening disposed in the first layer or at least one outer sidewall of the first layer.
A method for transferring a graphene layer that is disposed on a surface of a catalytic layer to a surface of a dielectric layer that is in physical contact with the catalytic layer, the method comprising: forming at least one opening that extends through the graphene layer and through the catalytic layer to the surface of the dielectric layer; forming a transfer layer structure that covers the graphene layer and fills the least one opening, wherein the transfer layer structure is in physical contact with the dielectric layer; and, subsequently, removing the catalytic layer; and, subsequently, at least one of deforming or removing the transfer layer structure to bring the graphene layer in physical contact with the surface of the dielectric layer. 47
Materials described outside the worked examples.
two-dimensional layer
support layer
Measurements and analyses referenced in the patent, with their drawing references.
FIG.6C. Illustratively, the first auxiliary layer 608a may be a soft mask that has been patterned by lithographic processes, as typically used in semiconductor …
Related documents with shared materials, methods, properties, or citations.
auxiliary layer structure
graphene
dielectric material
polymer
first layer (electrically conductive or semi-conductive)
second layer (dielectric layer or dielectric wafer)
catalytic layer
dielectric layer
FIG.8 illustrates a top view of a copper layer 402 having a thickness less than about 1 m, e.g in the range from about 0.1 m to about 0.5 a m, so that holes …
FIG. 11 shows a schematic view of a carrier after processing, according to various embodiments. Description [0005] The following detailed description refers to …
auxiliary layer structure
graphene
dielectric material
polymer
first layer (electrically conductive or semi-conductive)
second layer (dielectric layer or dielectric wafer)
catalytic layer
dielectric layer
FIG.8 illustrates a top view of a copper layer 402 having a thickness less than about 1 m, e.g in the range from about 0.1 m to about 0.5 a m, so that holes …
FIG. 11 shows a schematic view of a carrier after processing, according to various embodiments. Description [0005] The following detailed description refers to …
auxiliary layer structure
graphene
dielectric material
polymer
first layer (electrically conductive or semi-conductive)
second layer (dielectric layer or dielectric wafer)
catalytic layer
dielectric layer
FIG.8 illustrates a top view of a copper layer 402 having a thickness less than about 1 m, e.g in the range from about 0.1 m to about 0.5 a m, so that holes …
FIG. 11 shows a schematic view of a carrier after processing, according to various embodiments. Description [0005] The following detailed description refers to …
auxiliary layer structure
graphene
dielectric material
polymer
first layer (electrically conductive or semi-conductive)
second layer (dielectric layer or dielectric wafer)
catalytic layer
dielectric layer
FIG.8 illustrates a top view of a copper layer 402 having a thickness less than about 1 m, e.g in the range from about 0.1 m to about 0.5 a m, so that holes …
FIG. 11 shows a schematic view of a carrier after processing, according to various embodiments. Description [0005] The following detailed description refers to …