Patent
US 10,541,131INDIUM GALLIUM ARSENIDE SURFACE PASSIVATION BY SULFUR VAPOR TREATMENT
Yun Seog LEE
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,541,131Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. In one or more embodiments, for example, an ammonium hydroxide (NH 4 0 H) solution can be used to remove the native oxide layer 502 from the …
FIG. 2, resulting in a passivation layer 202 being formed on and in contact with the exposed top interface surface 105 of the I nGaAs material layer 104. In …
FIG. 3) can optionally be deposited on the first sulfur passivation film layer to enhance the interface surface passivation effect on the semiconductor structure. …
FIG. 4, can be deposited and formed on the sulfur-passivated interface surface by applying highly reactive precursors to the sulfur-passivated surface, or …
FIG. 5 is a cross-sectional side view of an example semiconductor structure in an ex-situ fabrication process, according to an embodiment of the present …
FIG. 6, an example of semiconductor fabrication equipment 600 is shown. A sulfur-passivation vacuum chamber 601 is shown with a sample product including an I …
FIG. 7. After the second gate 716 is locked to maintain the vacuum (or near vacuum) condition in the passivation vacuum chamber 722, one or more product …
FIG. 8. A heating element in contact with the substrate carrier or holder 806, and under control of the fabrication controller, can provide heat to the at …
FIG. 9 is an operational flow diagram illustrating one example process for fabricating a semiconductor structure according to an embodiment of the present …
FIG. 10 is a cross-sectional side view of an example FET device according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus for in-situ sulfur-vapor passivation of an interface surface of an indium gallium arsenide layer of a semiconductor structure, the apparatus comprising: at least one vacuum chamber equipped with a set of vacuum pumps, controllable by a fabrication controller, for generating and maintaining a high vacuum environment below 10-3 Torr in the at least one vacuum chamber, the at least one vacuum chamber having a main chamber compartment for sulfur-vapor passivation of an interface surface of an indium gallium arsenide layer disposed on a substrate located in a work area in the main chamber compartment; a sulfur source heating chamber compartment for heating a material comprising sulfur to a temperature of at least 150 0 C to generate thermally-cracked pure sulfur vapor flux in the sulfur source heating chamber; a sulfur vapor thermally cracking zone channel mechanically coupled at one end to the sulfur source heating chamber compartment and an output end of the sulfur vapor thermally cracking zone channel extending away from the sulfur source heating chamber compartment, the sulfur vapor thermally cracking zone channel providing a thermally-cracked pure sulfur vapor flux coupling channel for transferring the thermally-cracked pure sulfur vapor flux generated in the sulfur source heating chamber compartment to the work area in the main chamber compartment, the sulfur vapor thermally cracking zone channel for heating thermally-cracked pure sulfur vapor flux transferred through the sulfur vapor thermally cracking zone channel to a temperature of at least 700 0 C to generate highly reactive thermally-cracked pure sulfur vapor flux that is more reactive than the thermally-cracked pure sulfur vapor flux generated in the sulfur source heating chamber; and a substrate holder in the work area in the main chamber compartment of the at least one vacuum chamber, the substrate holder for holding, in the work area, at least one substrate with an indium gallium arsenide layer disposed on each of the at least one substrate, the indium gallium arsenide layer having an exposed interface surface, and the output end of the sulfur vapor thermally cracking zone channel being aimed toward the substrate holder in the work area in the main chamber compartment to uniformly distribute the highly reactive thermally-cracked pure sulfur vapor flux from the output end directly onto the exposed interface surface of the indium gallium arsenide layer disposed on each of the at least one substrate held by the substrate holder in the work area in the main chamber compartment of the at least one vacuum chamber. Currently amended
The apparatus of claim 1, wherein the substrate holder comprises: a heating element to heat the at least one substrate held by the substrate holder in the work area, to promote sulfurization reaction of thermally-cracked pure sulfur vapor flux deposited onto the exposed interface surface of the indium gallium arsenide layer disposed on each of the at least one substrate held by the substrate holder; and a rotationally driven spindle supporting a rotatable platform that supports the substrate holder, for: holding in the work area the at least one substrate by the substrate holder and supported by the rotatable platform, and rotating the rotatable platform and thereby rotating the substrate holder and the at least one substrate held in the work area to move the exposed interface surface, of the indium gallium arsenide layer disposed on each of the at least one substrate, across a thermally-cracked pure sulfur vapor flux output field emitted from the output end of the sulfur vapor thermally cracking zone channel, to uniformly distribute the highly reactive thermally-cracked pure sulfur vapor flux from the output directly onto the exposed interface surface of the indium gallium arsenide layer disposed on each of the at least one substrate held by the substrate holder. Original
The apparatus of claim 1, wherein the semiconductor structure comprises: a substrate; one or more I II -V layers disposed on the substrate, with a surface layer of indium gallium arsenide having an interface surface; and a sulfur film layer disposed directly on, and passivating, the interface surface of the surface layer of indium gallium arsenide, the sulfur passivated interface surface of the surface layer of indium gallium arsenide having an interface defect density (D lt) distribution of less than 2x 10 11 eV 1 cm 2 measured near mid gap across a band-gap. Original
A method for fabricating a semiconductor structure, the method comprising: controlling, by a fabrication controller, at least one vacuum chamber equipped with a set of vacuum pumps, for generating and maintaining a high vacuum environment below 10 -3 Torr in the at least one vacuum chamber, the at least one vacuum chamber having a main chamber compartment for sulfur-vapor passivation of an interface surface of an indium gallium arsenide layer disposed on a substrate located in a work area in the main chamber compartment; heating, by a sulfur source heating chamber compartment, a material comprising sulfur to a temperature of at least 150 C to generate thermally-cracked pure sulfur vapor flux in the sulfur source heating chamber; transferring thermally-cracked pure sulfur vapor flux generated in a sulfur source heating chamber compartment through a sulfur vapor thermally cracking zone channel to the work area in the main chamber compartment; heating the thermally-cracked pure sulfur vapor flux while transferred through the sulfur vapor thermally cracking zone channel to a temperature of at least 700 C to generate highly reactive thermally-cracked pure sulfur vapor flux that is more reactive than the thermally- cracked pure sulfur vapor flux generated in the sulfur source heating chamber; and holding, by a substrate holder in the work area, at least one substrate with an indium gallium arsenide layer disposed on each of the at least one substrate, the indium gallium arsenide layer having an exposed interface surface, such that an output end of the sulfur vapor thermally cracking zone channel is aimed toward the substrate holder in the work area in the main chamber compartment to uniformly distribute the highly reactive thermally-cracked pure sulfur vapor flux from the output directly onto the exposed interface surface of the indium gallium arsenide layer disposed on each of the at least one substrate held by the substrate holder in the work area in the main chamber compartment of the at least one vacuum chamber.
The method of claim 9, further comprising: heating, by a heating element in the substrate holder, the at least one substrate held by the substrate holder in the work area, to promote sulfurization reaction of thermally-cracked pure sulfur vapor flux deposited onto the exposed interface surface of the indium gallium arsenide layer disposed on each of the at least one substrate held by the substrate holder; and holding in the work area the at least one substrate by the substrate holder being supported by a rotatable platform, and rotating the rotatable platform and thereby rotating the substrate holder and the at least one substrate held in the work area to move the exposed interface surface, of the indium gallium arsenide layer disposed on each of the at least one substrate, across a thermally-cracked pure sulfur vapor flux output field emitted from the output end of the sulfur vapor thermally cracking zone channel, to uniformly distribute the highly reactive thermally-cracked pure sulfur vapor flux from the output directly onto the exposed interface surface of the indium gallium arsenide layer disposed on each of the at least one substrate held by the substrate holder. Original
The method of claim 9, wherein the method is for fabricating a semiconductor structure comprising: a substrate; one or more I II -V layers disposed on the substrate, with a surface layer of indium gallium arsenide having an interface surface; and a sulfur film layer disposed directly on, and passivating, the interface surface of the surface layer of indium gallium arsenide, the sulfur passivated interface surface of the surface layer of indium gallium arsenide having an interface defect density (D lt) distribution of less than 2x 10 11 eV 1 cm⁻² measured near mid gap across a band-gap. Original
The method of claim 9, wherein the method is for fabricating the semiconductor structure further comprising: an additional passivation layer disposed directly on the sulfur film layer disposed directly on the sulfur passivated interface surface of the surface layer of indium gallium arsenide, wherein the additional passivation layer comprises at least one material selected from the following: ammonium sulfide ((N H 4) 2 S), hydrogenated amorphous silicon (a- Si:H), gallium gadolinium oxide ((Ga 2 0 3) 1.X (Gd 2 O 3)x, or GGO), zin c sulfide (ZnS), and cadmium sulfide (CdS), to further passivate the sulfur passivated interface surface of the surface layer of indium gallium arsenide. Original
The method of claim 9, wherein the method is for fabricating the semiconductor structure wherein the surface layer of indium gallium arsenide comprises InX Gai. SVG 16000053.08-30-2019.K05DPDIOLXEAPX2.CLM.2.svg 0.16 1.02 Black and white Original
The method of claim 9, wherein the method is performed for fabricating at least one device selected from the following set of devices: a semiconductor wafer including at least one semiconductor device; a MOSFET device; a HEMT device; a photovoltaic device; and a photodetector device. Original
The method of claim 9, comprising: performing, in a high vacuum environment below 10 -3 Torr, thermally-cracked elemental sulfur-vapor passivation of an interface surface of an indium gallium arsenide layer disposed on a substrate; deposition of a dielectric layer on the sulfur-vapor passivated interface surface of the indium gallium arsenide layer disposed on the substrate; and anneal, after the deposition, the indium gallium arsenide layer including the sulfur-vapor passivated interface surface thereof, and the dielectric layer disposed on the sulfur-vapor passivated interface surface. Original
Layer stacks claimed or described, ordered top of device to substrate.
sulfur vapor passivation apparatus
sulfur-passivated InGaAs semiconductor structure
Materials described outside the worked examples.
indium gallium arsenide
InxGa₁-xAs
sulfur
S
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3) can optionally be deposited on the first sulfur passivation film layer to enhance the interface surface passivation effect on the semiconductor structure. …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Dit distribution near mid-gap for sulfur-passivated InGaAs interface | ≤ 200000000000 eV-1 cm⁻² | InxGa₁-xAsS |
Dit distribution after anneal >300C in H2 ambient for sulfur-passivated InGaAs |
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Patent
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US 10,541,131Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. In one or more embodiments, for example, an ammonium hydroxide (NH 4 0 H) solution can be used to remove the native oxide layer 502 from the …
FIG. 2, resulting in a passivation layer 202 being formed on and in contact with the exposed top interface surface 105 of the I nGaAs material layer 104. In …
FIG. 3) can optionally be deposited on the first sulfur passivation film layer to enhance the interface surface passivation effect on the semiconductor structure. …
FIG. 4, can be deposited and formed on the sulfur-passivated interface surface by applying highly reactive precursors to the sulfur-passivated surface, or …
FIG. 5 is a cross-sectional side view of an example semiconductor structure in an ex-situ fabrication process, according to an embodiment of the present …
FIG. 6, an example of semiconductor fabrication equipment 600 is shown. A sulfur-passivation vacuum chamber 601 is shown with a sample product including an I …
FIG. 7. After the second gate 716 is locked to maintain the vacuum (or near vacuum) condition in the passivation vacuum chamber 722, one or more product …
FIG. 8. A heating element in contact with the substrate carrier or holder 806, and under control of the fabrication controller, can provide heat to the at …
FIG. 9 is an operational flow diagram illustrating one example process for fabricating a semiconductor structure according to an embodiment of the present …
FIG. 10 is a cross-sectional side view of an example FET device according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus for in-situ sulfur-vapor passivation of an interface surface of an indium gallium arsenide layer of a semiconductor structure, the apparatus comprising: at least one vacuum chamber equipped with a set of vacuum pumps, controllable by a fabrication controller, for generating and maintaining a high vacuum environment below 10-3 Torr in the at least one vacuum chamber, the at least one vacuum chamber having a main chamber compartment for sulfur-vapor passivation of an interface surface of an indium gallium arsenide layer disposed on a substrate located in a work area in the main chamber compartment; a sulfur source heating chamber compartment for heating a material comprising sulfur to a temperature of at least 150 0 C to generate thermally-cracked pure sulfur vapor flux in the sulfur source heating chamber; a sulfur vapor thermally cracking zone channel mechanically coupled at one end to the sulfur source heating chamber compartment and an output end of the sulfur vapor thermally cracking zone channel extending away from the sulfur source heating chamber compartment, the sulfur vapor thermally cracking zone channel providing a thermally-cracked pure sulfur vapor flux coupling channel for transferring the thermally-cracked pure sulfur vapor flux generated in the sulfur source heating chamber compartment to the work area in the main chamber compartment, the sulfur vapor thermally cracking zone channel for heating thermally-cracked pure sulfur vapor flux transferred through the sulfur vapor thermally cracking zone channel to a temperature of at least 700 0 C to generate highly reactive thermally-cracked pure sulfur vapor flux that is more reactive than the thermally-cracked pure sulfur vapor flux generated in the sulfur source heating chamber; and a substrate holder in the work area in the main chamber compartment of the at least one vacuum chamber, the substrate holder for holding, in the work area, at least one substrate with an indium gallium arsenide layer disposed on each of the at least one substrate, the indium gallium arsenide layer having an exposed interface surface, and the output end of the sulfur vapor thermally cracking zone channel being aimed toward the substrate holder in the work area in the main chamber compartment to uniformly distribute the highly reactive thermally-cracked pure sulfur vapor flux from the output end directly onto the exposed interface surface of the indium gallium arsenide layer disposed on each of the at least one substrate held by the substrate holder in the work area in the main chamber compartment of the at least one vacuum chamber. Currently amended
The apparatus of claim 1, wherein the substrate holder comprises: a heating element to heat the at least one substrate held by the substrate holder in the work area, to promote sulfurization reaction of thermally-cracked pure sulfur vapor flux deposited onto the exposed interface surface of the indium gallium arsenide layer disposed on each of the at least one substrate held by the substrate holder; and a rotationally driven spindle supporting a rotatable platform that supports the substrate holder, for: holding in the work area the at least one substrate by the substrate holder and supported by the rotatable platform, and rotating the rotatable platform and thereby rotating the substrate holder and the at least one substrate held in the work area to move the exposed interface surface, of the indium gallium arsenide layer disposed on each of the at least one substrate, across a thermally-cracked pure sulfur vapor flux output field emitted from the output end of the sulfur vapor thermally cracking zone channel, to uniformly distribute the highly reactive thermally-cracked pure sulfur vapor flux from the output directly onto the exposed interface surface of the indium gallium arsenide layer disposed on each of the at least one substrate held by the substrate holder. Original
The apparatus of claim 1, wherein the semiconductor structure comprises: a substrate; one or more I II -V layers disposed on the substrate, with a surface layer of indium gallium arsenide having an interface surface; and a sulfur film layer disposed directly on, and passivating, the interface surface of the surface layer of indium gallium arsenide, the sulfur passivated interface surface of the surface layer of indium gallium arsenide having an interface defect density (D lt) distribution of less than 2x 10 11 eV 1 cm 2 measured near mid gap across a band-gap. Original
A method for fabricating a semiconductor structure, the method comprising: controlling, by a fabrication controller, at least one vacuum chamber equipped with a set of vacuum pumps, for generating and maintaining a high vacuum environment below 10 -3 Torr in the at least one vacuum chamber, the at least one vacuum chamber having a main chamber compartment for sulfur-vapor passivation of an interface surface of an indium gallium arsenide layer disposed on a substrate located in a work area in the main chamber compartment; heating, by a sulfur source heating chamber compartment, a material comprising sulfur to a temperature of at least 150 C to generate thermally-cracked pure sulfur vapor flux in the sulfur source heating chamber; transferring thermally-cracked pure sulfur vapor flux generated in a sulfur source heating chamber compartment through a sulfur vapor thermally cracking zone channel to the work area in the main chamber compartment; heating the thermally-cracked pure sulfur vapor flux while transferred through the sulfur vapor thermally cracking zone channel to a temperature of at least 700 C to generate highly reactive thermally-cracked pure sulfur vapor flux that is more reactive than the thermally- cracked pure sulfur vapor flux generated in the sulfur source heating chamber; and holding, by a substrate holder in the work area, at least one substrate with an indium gallium arsenide layer disposed on each of the at least one substrate, the indium gallium arsenide layer having an exposed interface surface, such that an output end of the sulfur vapor thermally cracking zone channel is aimed toward the substrate holder in the work area in the main chamber compartment to uniformly distribute the highly reactive thermally-cracked pure sulfur vapor flux from the output directly onto the exposed interface surface of the indium gallium arsenide layer disposed on each of the at least one substrate held by the substrate holder in the work area in the main chamber compartment of the at least one vacuum chamber.
The method of claim 9, further comprising: heating, by a heating element in the substrate holder, the at least one substrate held by the substrate holder in the work area, to promote sulfurization reaction of thermally-cracked pure sulfur vapor flux deposited onto the exposed interface surface of the indium gallium arsenide layer disposed on each of the at least one substrate held by the substrate holder; and holding in the work area the at least one substrate by the substrate holder being supported by a rotatable platform, and rotating the rotatable platform and thereby rotating the substrate holder and the at least one substrate held in the work area to move the exposed interface surface, of the indium gallium arsenide layer disposed on each of the at least one substrate, across a thermally-cracked pure sulfur vapor flux output field emitted from the output end of the sulfur vapor thermally cracking zone channel, to uniformly distribute the highly reactive thermally-cracked pure sulfur vapor flux from the output directly onto the exposed interface surface of the indium gallium arsenide layer disposed on each of the at least one substrate held by the substrate holder. Original
The method of claim 9, wherein the method is for fabricating a semiconductor structure comprising: a substrate; one or more I II -V layers disposed on the substrate, with a surface layer of indium gallium arsenide having an interface surface; and a sulfur film layer disposed directly on, and passivating, the interface surface of the surface layer of indium gallium arsenide, the sulfur passivated interface surface of the surface layer of indium gallium arsenide having an interface defect density (D lt) distribution of less than 2x 10 11 eV 1 cm⁻² measured near mid gap across a band-gap. Original
The method of claim 9, wherein the method is for fabricating the semiconductor structure further comprising: an additional passivation layer disposed directly on the sulfur film layer disposed directly on the sulfur passivated interface surface of the surface layer of indium gallium arsenide, wherein the additional passivation layer comprises at least one material selected from the following: ammonium sulfide ((N H 4) 2 S), hydrogenated amorphous silicon (a- Si:H), gallium gadolinium oxide ((Ga 2 0 3) 1.X (Gd 2 O 3)x, or GGO), zin c sulfide (ZnS), and cadmium sulfide (CdS), to further passivate the sulfur passivated interface surface of the surface layer of indium gallium arsenide. Original
The method of claim 9, wherein the method is for fabricating the semiconductor structure wherein the surface layer of indium gallium arsenide comprises InX Gai. SVG 16000053.08-30-2019.K05DPDIOLXEAPX2.CLM.2.svg 0.16 1.02 Black and white Original
The method of claim 9, wherein the method is performed for fabricating at least one device selected from the following set of devices: a semiconductor wafer including at least one semiconductor device; a MOSFET device; a HEMT device; a photovoltaic device; and a photodetector device. Original
The method of claim 9, comprising: performing, in a high vacuum environment below 10 -3 Torr, thermally-cracked elemental sulfur-vapor passivation of an interface surface of an indium gallium arsenide layer disposed on a substrate; deposition of a dielectric layer on the sulfur-vapor passivated interface surface of the indium gallium arsenide layer disposed on the substrate; and anneal, after the deposition, the indium gallium arsenide layer including the sulfur-vapor passivated interface surface thereof, and the dielectric layer disposed on the sulfur-vapor passivated interface surface. Original
Layer stacks claimed or described, ordered top of device to substrate.
sulfur vapor passivation apparatus
sulfur-passivated InGaAs semiconductor structure
Materials described outside the worked examples.
indium gallium arsenide
InxGa₁-xAs
sulfur
S
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3) can optionally be deposited on the first sulfur passivation film layer to enhance the interface surface passivation effect on the semiconductor structure. …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Dit distribution near mid-gap for sulfur-passivated InGaAs interface | ≤ 200000000000 eV-1 cm⁻² | InxGa₁-xAsS |
Dit distribution after anneal >300C in H2 ambient for sulfur-passivated InGaAs |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
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US 10,541,131Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. In one or more embodiments, for example, an ammonium hydroxide (NH 4 0 H) solution can be used to remove the native oxide layer 502 from the …
FIG. 2, resulting in a passivation layer 202 being formed on and in contact with the exposed top interface surface 105 of the I nGaAs material layer 104. In …
FIG. 3) can optionally be deposited on the first sulfur passivation film layer to enhance the interface surface passivation effect on the semiconductor structure. …
FIG. 4, can be deposited and formed on the sulfur-passivated interface surface by applying highly reactive precursors to the sulfur-passivated surface, or …
FIG. 5 is a cross-sectional side view of an example semiconductor structure in an ex-situ fabrication process, according to an embodiment of the present …
FIG. 6, an example of semiconductor fabrication equipment 600 is shown. A sulfur-passivation vacuum chamber 601 is shown with a sample product including an I …
FIG. 7. After the second gate 716 is locked to maintain the vacuum (or near vacuum) condition in the passivation vacuum chamber 722, one or more product …
FIG. 8. A heating element in contact with the substrate carrier or holder 806, and under control of the fabrication controller, can provide heat to the at …
FIG. 9 is an operational flow diagram illustrating one example process for fabricating a semiconductor structure according to an embodiment of the present …
FIG. 10 is a cross-sectional side view of an example FET device according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus for in-situ sulfur-vapor passivation of an interface surface of an indium gallium arsenide layer of a semiconductor structure, the apparatus comprising: at least one vacuum chamber equipped with a set of vacuum pumps, controllable by a fabrication controller, for generating and maintaining a high vacuum environment below 10-3 Torr in the at least one vacuum chamber, the at least one vacuum chamber having a main chamber compartment for sulfur-vapor passivation of an interface surface of an indium gallium arsenide layer disposed on a substrate located in a work area in the main chamber compartment; a sulfur source heating chamber compartment for heating a material comprising sulfur to a temperature of at least 150 0 C to generate thermally-cracked pure sulfur vapor flux in the sulfur source heating chamber; a sulfur vapor thermally cracking zone channel mechanically coupled at one end to the sulfur source heating chamber compartment and an output end of the sulfur vapor thermally cracking zone channel extending away from the sulfur source heating chamber compartment, the sulfur vapor thermally cracking zone channel providing a thermally-cracked pure sulfur vapor flux coupling channel for transferring the thermally-cracked pure sulfur vapor flux generated in the sulfur source heating chamber compartment to the work area in the main chamber compartment, the sulfur vapor thermally cracking zone channel for heating thermally-cracked pure sulfur vapor flux transferred through the sulfur vapor thermally cracking zone channel to a temperature of at least 700 0 C to generate highly reactive thermally-cracked pure sulfur vapor flux that is more reactive than the thermally-cracked pure sulfur vapor flux generated in the sulfur source heating chamber; and a substrate holder in the work area in the main chamber compartment of the at least one vacuum chamber, the substrate holder for holding, in the work area, at least one substrate with an indium gallium arsenide layer disposed on each of the at least one substrate, the indium gallium arsenide layer having an exposed interface surface, and the output end of the sulfur vapor thermally cracking zone channel being aimed toward the substrate holder in the work area in the main chamber compartment to uniformly distribute the highly reactive thermally-cracked pure sulfur vapor flux from the output end directly onto the exposed interface surface of the indium gallium arsenide layer disposed on each of the at least one substrate held by the substrate holder in the work area in the main chamber compartment of the at least one vacuum chamber. Currently amended
The apparatus of claim 1, wherein the substrate holder comprises: a heating element to heat the at least one substrate held by the substrate holder in the work area, to promote sulfurization reaction of thermally-cracked pure sulfur vapor flux deposited onto the exposed interface surface of the indium gallium arsenide layer disposed on each of the at least one substrate held by the substrate holder; and a rotationally driven spindle supporting a rotatable platform that supports the substrate holder, for: holding in the work area the at least one substrate by the substrate holder and supported by the rotatable platform, and rotating the rotatable platform and thereby rotating the substrate holder and the at least one substrate held in the work area to move the exposed interface surface, of the indium gallium arsenide layer disposed on each of the at least one substrate, across a thermally-cracked pure sulfur vapor flux output field emitted from the output end of the sulfur vapor thermally cracking zone channel, to uniformly distribute the highly reactive thermally-cracked pure sulfur vapor flux from the output directly onto the exposed interface surface of the indium gallium arsenide layer disposed on each of the at least one substrate held by the substrate holder. Original
The apparatus of claim 1, wherein the semiconductor structure comprises: a substrate; one or more I II -V layers disposed on the substrate, with a surface layer of indium gallium arsenide having an interface surface; and a sulfur film layer disposed directly on, and passivating, the interface surface of the surface layer of indium gallium arsenide, the sulfur passivated interface surface of the surface layer of indium gallium arsenide having an interface defect density (D lt) distribution of less than 2x 10 11 eV 1 cm 2 measured near mid gap across a band-gap. Original
A method for fabricating a semiconductor structure, the method comprising: controlling, by a fabrication controller, at least one vacuum chamber equipped with a set of vacuum pumps, for generating and maintaining a high vacuum environment below 10 -3 Torr in the at least one vacuum chamber, the at least one vacuum chamber having a main chamber compartment for sulfur-vapor passivation of an interface surface of an indium gallium arsenide layer disposed on a substrate located in a work area in the main chamber compartment; heating, by a sulfur source heating chamber compartment, a material comprising sulfur to a temperature of at least 150 C to generate thermally-cracked pure sulfur vapor flux in the sulfur source heating chamber; transferring thermally-cracked pure sulfur vapor flux generated in a sulfur source heating chamber compartment through a sulfur vapor thermally cracking zone channel to the work area in the main chamber compartment; heating the thermally-cracked pure sulfur vapor flux while transferred through the sulfur vapor thermally cracking zone channel to a temperature of at least 700 C to generate highly reactive thermally-cracked pure sulfur vapor flux that is more reactive than the thermally- cracked pure sulfur vapor flux generated in the sulfur source heating chamber; and holding, by a substrate holder in the work area, at least one substrate with an indium gallium arsenide layer disposed on each of the at least one substrate, the indium gallium arsenide layer having an exposed interface surface, such that an output end of the sulfur vapor thermally cracking zone channel is aimed toward the substrate holder in the work area in the main chamber compartment to uniformly distribute the highly reactive thermally-cracked pure sulfur vapor flux from the output directly onto the exposed interface surface of the indium gallium arsenide layer disposed on each of the at least one substrate held by the substrate holder in the work area in the main chamber compartment of the at least one vacuum chamber.
The method of claim 9, further comprising: heating, by a heating element in the substrate holder, the at least one substrate held by the substrate holder in the work area, to promote sulfurization reaction of thermally-cracked pure sulfur vapor flux deposited onto the exposed interface surface of the indium gallium arsenide layer disposed on each of the at least one substrate held by the substrate holder; and holding in the work area the at least one substrate by the substrate holder being supported by a rotatable platform, and rotating the rotatable platform and thereby rotating the substrate holder and the at least one substrate held in the work area to move the exposed interface surface, of the indium gallium arsenide layer disposed on each of the at least one substrate, across a thermally-cracked pure sulfur vapor flux output field emitted from the output end of the sulfur vapor thermally cracking zone channel, to uniformly distribute the highly reactive thermally-cracked pure sulfur vapor flux from the output directly onto the exposed interface surface of the indium gallium arsenide layer disposed on each of the at least one substrate held by the substrate holder. Original
The method of claim 9, wherein the method is for fabricating a semiconductor structure comprising: a substrate; one or more I II -V layers disposed on the substrate, with a surface layer of indium gallium arsenide having an interface surface; and a sulfur film layer disposed directly on, and passivating, the interface surface of the surface layer of indium gallium arsenide, the sulfur passivated interface surface of the surface layer of indium gallium arsenide having an interface defect density (D lt) distribution of less than 2x 10 11 eV 1 cm⁻² measured near mid gap across a band-gap. Original
The method of claim 9, wherein the method is for fabricating the semiconductor structure further comprising: an additional passivation layer disposed directly on the sulfur film layer disposed directly on the sulfur passivated interface surface of the surface layer of indium gallium arsenide, wherein the additional passivation layer comprises at least one material selected from the following: ammonium sulfide ((N H 4) 2 S), hydrogenated amorphous silicon (a- Si:H), gallium gadolinium oxide ((Ga 2 0 3) 1.X (Gd 2 O 3)x, or GGO), zin c sulfide (ZnS), and cadmium sulfide (CdS), to further passivate the sulfur passivated interface surface of the surface layer of indium gallium arsenide. Original
The method of claim 9, wherein the method is for fabricating the semiconductor structure wherein the surface layer of indium gallium arsenide comprises InX Gai. SVG 16000053.08-30-2019.K05DPDIOLXEAPX2.CLM.2.svg 0.16 1.02 Black and white Original
The method of claim 9, wherein the method is performed for fabricating at least one device selected from the following set of devices: a semiconductor wafer including at least one semiconductor device; a MOSFET device; a HEMT device; a photovoltaic device; and a photodetector device. Original
The method of claim 9, comprising: performing, in a high vacuum environment below 10 -3 Torr, thermally-cracked elemental sulfur-vapor passivation of an interface surface of an indium gallium arsenide layer disposed on a substrate; deposition of a dielectric layer on the sulfur-vapor passivated interface surface of the indium gallium arsenide layer disposed on the substrate; and anneal, after the deposition, the indium gallium arsenide layer including the sulfur-vapor passivated interface surface thereof, and the dielectric layer disposed on the sulfur-vapor passivated interface surface. Original
Layer stacks claimed or described, ordered top of device to substrate.
sulfur vapor passivation apparatus
sulfur-passivated InGaAs semiconductor structure
Materials described outside the worked examples.
indium gallium arsenide
InxGa₁-xAs
sulfur
S
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3) can optionally be deposited on the first sulfur passivation film layer to enhance the interface surface passivation effect on the semiconductor structure. …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Dit distribution near mid-gap for sulfur-passivated InGaAs interface | ≤ 200000000000 eV-1 cm⁻² | InxGa₁-xAsS |
Dit distribution after anneal >300C in H2 ambient for sulfur-passivated InGaAs |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,541,131Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. In one or more embodiments, for example, an ammonium hydroxide (NH 4 0 H) solution can be used to remove the native oxide layer 502 from the …
FIG. 2, resulting in a passivation layer 202 being formed on and in contact with the exposed top interface surface 105 of the I nGaAs material layer 104. In …
FIG. 3) can optionally be deposited on the first sulfur passivation film layer to enhance the interface surface passivation effect on the semiconductor structure. …
FIG. 4, can be deposited and formed on the sulfur-passivated interface surface by applying highly reactive precursors to the sulfur-passivated surface, or …
FIG. 5 is a cross-sectional side view of an example semiconductor structure in an ex-situ fabrication process, according to an embodiment of the present …
FIG. 6, an example of semiconductor fabrication equipment 600 is shown. A sulfur-passivation vacuum chamber 601 is shown with a sample product including an I …
FIG. 7. After the second gate 716 is locked to maintain the vacuum (or near vacuum) condition in the passivation vacuum chamber 722, one or more product …
FIG. 8. A heating element in contact with the substrate carrier or holder 806, and under control of the fabrication controller, can provide heat to the at …
FIG. 9 is an operational flow diagram illustrating one example process for fabricating a semiconductor structure according to an embodiment of the present …
FIG. 10 is a cross-sectional side view of an example FET device according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus for in-situ sulfur-vapor passivation of an interface surface of an indium gallium arsenide layer of a semiconductor structure, the apparatus comprising: at least one vacuum chamber equipped with a set of vacuum pumps, controllable by a fabrication controller, for generating and maintaining a high vacuum environment below 10-3 Torr in the at least one vacuum chamber, the at least one vacuum chamber having a main chamber compartment for sulfur-vapor passivation of an interface surface of an indium gallium arsenide layer disposed on a substrate located in a work area in the main chamber compartment; a sulfur source heating chamber compartment for heating a material comprising sulfur to a temperature of at least 150 0 C to generate thermally-cracked pure sulfur vapor flux in the sulfur source heating chamber; a sulfur vapor thermally cracking zone channel mechanically coupled at one end to the sulfur source heating chamber compartment and an output end of the sulfur vapor thermally cracking zone channel extending away from the sulfur source heating chamber compartment, the sulfur vapor thermally cracking zone channel providing a thermally-cracked pure sulfur vapor flux coupling channel for transferring the thermally-cracked pure sulfur vapor flux generated in the sulfur source heating chamber compartment to the work area in the main chamber compartment, the sulfur vapor thermally cracking zone channel for heating thermally-cracked pure sulfur vapor flux transferred through the sulfur vapor thermally cracking zone channel to a temperature of at least 700 0 C to generate highly reactive thermally-cracked pure sulfur vapor flux that is more reactive than the thermally-cracked pure sulfur vapor flux generated in the sulfur source heating chamber; and a substrate holder in the work area in the main chamber compartment of the at least one vacuum chamber, the substrate holder for holding, in the work area, at least one substrate with an indium gallium arsenide layer disposed on each of the at least one substrate, the indium gallium arsenide layer having an exposed interface surface, and the output end of the sulfur vapor thermally cracking zone channel being aimed toward the substrate holder in the work area in the main chamber compartment to uniformly distribute the highly reactive thermally-cracked pure sulfur vapor flux from the output end directly onto the exposed interface surface of the indium gallium arsenide layer disposed on each of the at least one substrate held by the substrate holder in the work area in the main chamber compartment of the at least one vacuum chamber. Currently amended
The apparatus of claim 1, wherein the substrate holder comprises: a heating element to heat the at least one substrate held by the substrate holder in the work area, to promote sulfurization reaction of thermally-cracked pure sulfur vapor flux deposited onto the exposed interface surface of the indium gallium arsenide layer disposed on each of the at least one substrate held by the substrate holder; and a rotationally driven spindle supporting a rotatable platform that supports the substrate holder, for: holding in the work area the at least one substrate by the substrate holder and supported by the rotatable platform, and rotating the rotatable platform and thereby rotating the substrate holder and the at least one substrate held in the work area to move the exposed interface surface, of the indium gallium arsenide layer disposed on each of the at least one substrate, across a thermally-cracked pure sulfur vapor flux output field emitted from the output end of the sulfur vapor thermally cracking zone channel, to uniformly distribute the highly reactive thermally-cracked pure sulfur vapor flux from the output directly onto the exposed interface surface of the indium gallium arsenide layer disposed on each of the at least one substrate held by the substrate holder. Original
The apparatus of claim 1, wherein the semiconductor structure comprises: a substrate; one or more I II -V layers disposed on the substrate, with a surface layer of indium gallium arsenide having an interface surface; and a sulfur film layer disposed directly on, and passivating, the interface surface of the surface layer of indium gallium arsenide, the sulfur passivated interface surface of the surface layer of indium gallium arsenide having an interface defect density (D lt) distribution of less than 2x 10 11 eV 1 cm 2 measured near mid gap across a band-gap. Original
A method for fabricating a semiconductor structure, the method comprising: controlling, by a fabrication controller, at least one vacuum chamber equipped with a set of vacuum pumps, for generating and maintaining a high vacuum environment below 10 -3 Torr in the at least one vacuum chamber, the at least one vacuum chamber having a main chamber compartment for sulfur-vapor passivation of an interface surface of an indium gallium arsenide layer disposed on a substrate located in a work area in the main chamber compartment; heating, by a sulfur source heating chamber compartment, a material comprising sulfur to a temperature of at least 150 C to generate thermally-cracked pure sulfur vapor flux in the sulfur source heating chamber; transferring thermally-cracked pure sulfur vapor flux generated in a sulfur source heating chamber compartment through a sulfur vapor thermally cracking zone channel to the work area in the main chamber compartment; heating the thermally-cracked pure sulfur vapor flux while transferred through the sulfur vapor thermally cracking zone channel to a temperature of at least 700 C to generate highly reactive thermally-cracked pure sulfur vapor flux that is more reactive than the thermally- cracked pure sulfur vapor flux generated in the sulfur source heating chamber; and holding, by a substrate holder in the work area, at least one substrate with an indium gallium arsenide layer disposed on each of the at least one substrate, the indium gallium arsenide layer having an exposed interface surface, such that an output end of the sulfur vapor thermally cracking zone channel is aimed toward the substrate holder in the work area in the main chamber compartment to uniformly distribute the highly reactive thermally-cracked pure sulfur vapor flux from the output directly onto the exposed interface surface of the indium gallium arsenide layer disposed on each of the at least one substrate held by the substrate holder in the work area in the main chamber compartment of the at least one vacuum chamber.
The method of claim 9, further comprising: heating, by a heating element in the substrate holder, the at least one substrate held by the substrate holder in the work area, to promote sulfurization reaction of thermally-cracked pure sulfur vapor flux deposited onto the exposed interface surface of the indium gallium arsenide layer disposed on each of the at least one substrate held by the substrate holder; and holding in the work area the at least one substrate by the substrate holder being supported by a rotatable platform, and rotating the rotatable platform and thereby rotating the substrate holder and the at least one substrate held in the work area to move the exposed interface surface, of the indium gallium arsenide layer disposed on each of the at least one substrate, across a thermally-cracked pure sulfur vapor flux output field emitted from the output end of the sulfur vapor thermally cracking zone channel, to uniformly distribute the highly reactive thermally-cracked pure sulfur vapor flux from the output directly onto the exposed interface surface of the indium gallium arsenide layer disposed on each of the at least one substrate held by the substrate holder. Original
The method of claim 9, wherein the method is for fabricating a semiconductor structure comprising: a substrate; one or more I II -V layers disposed on the substrate, with a surface layer of indium gallium arsenide having an interface surface; and a sulfur film layer disposed directly on, and passivating, the interface surface of the surface layer of indium gallium arsenide, the sulfur passivated interface surface of the surface layer of indium gallium arsenide having an interface defect density (D lt) distribution of less than 2x 10 11 eV 1 cm⁻² measured near mid gap across a band-gap. Original
The method of claim 9, wherein the method is for fabricating the semiconductor structure further comprising: an additional passivation layer disposed directly on the sulfur film layer disposed directly on the sulfur passivated interface surface of the surface layer of indium gallium arsenide, wherein the additional passivation layer comprises at least one material selected from the following: ammonium sulfide ((N H 4) 2 S), hydrogenated amorphous silicon (a- Si:H), gallium gadolinium oxide ((Ga 2 0 3) 1.X (Gd 2 O 3)x, or GGO), zin c sulfide (ZnS), and cadmium sulfide (CdS), to further passivate the sulfur passivated interface surface of the surface layer of indium gallium arsenide. Original
The method of claim 9, wherein the method is for fabricating the semiconductor structure wherein the surface layer of indium gallium arsenide comprises InX Gai. SVG 16000053.08-30-2019.K05DPDIOLXEAPX2.CLM.2.svg 0.16 1.02 Black and white Original
The method of claim 9, wherein the method is performed for fabricating at least one device selected from the following set of devices: a semiconductor wafer including at least one semiconductor device; a MOSFET device; a HEMT device; a photovoltaic device; and a photodetector device. Original
The method of claim 9, comprising: performing, in a high vacuum environment below 10 -3 Torr, thermally-cracked elemental sulfur-vapor passivation of an interface surface of an indium gallium arsenide layer disposed on a substrate; deposition of a dielectric layer on the sulfur-vapor passivated interface surface of the indium gallium arsenide layer disposed on the substrate; and anneal, after the deposition, the indium gallium arsenide layer including the sulfur-vapor passivated interface surface thereof, and the dielectric layer disposed on the sulfur-vapor passivated interface surface. Original
Layer stacks claimed or described, ordered top of device to substrate.
sulfur vapor passivation apparatus
sulfur-passivated InGaAs semiconductor structure
Materials described outside the worked examples.
indium gallium arsenide
InxGa₁-xAs
sulfur
S
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3) can optionally be deposited on the first sulfur passivation film layer to enhance the interface surface passivation effect on the semiconductor structure. …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Dit distribution near mid-gap for sulfur-passivated InGaAs interface | ≤ 200000000000 eV-1 cm⁻² | InxGa₁-xAsS |
Dit distribution after anneal >300C in H2 ambient for sulfur-passivated InGaAs |
Related documents with shared materials, methods, properties, or citations.
MOSFET device
No layer stack recorded.
HEMT device
No layer stack recorded.
photovoltaic device
No layer stack recorded.
photodetector device
No layer stack recorded.
high-k dielectric layer
hydrogenated amorphous silicon
a-Si:H
gallium gadolinium oxide
(Ga₂O₃)1-x(Gd₂O₃)x
zinc sulfide
ZnS
cadmium sulfide
CdS
ammonium sulfide
(NH₄)2S
FIG. 4, can be deposited and formed on the sulfur-passivated interface surface by applying highly reactive precursors to the sulfur-passivated surface, or …
FIG. 10 is a cross-sectional side view of an example FET device according to an embodiment of the present invention.
| ≤ 200000000000 eV-1 cm⁻² |
InxGa₁-xAsS |
high-k dielectric constant threshold claimed | ≥ 2.5 dimensionless | high-k dielectric layer |
Unpassivated InGaAs/high-k dielectric interface defect density (background/prior art) | 10000000000000 cm⁻² eV-1 | InxGa₁-xAs |
Thickness | 4–150 nm | — |
Temperature | 200–400 °C | — |
Pressure | 0–3 Torr | — |
Temperature | 20–25 °C | — |
Temperature | ≥ 300 K | — |
Pressure | 0.001 Torr | — |
Pressure | ≤ 0.001 Torr | — |
Temperature | ≥ 700 °C | — |
MOSFET device
No layer stack recorded.
HEMT device
No layer stack recorded.
photovoltaic device
No layer stack recorded.
photodetector device
No layer stack recorded.
high-k dielectric layer
hydrogenated amorphous silicon
a-Si:H
gallium gadolinium oxide
(Ga₂O₃)1-x(Gd₂O₃)x
zinc sulfide
ZnS
cadmium sulfide
CdS
ammonium sulfide
(NH₄)2S
FIG. 4, can be deposited and formed on the sulfur-passivated interface surface by applying highly reactive precursors to the sulfur-passivated surface, or …
FIG. 10 is a cross-sectional side view of an example FET device according to an embodiment of the present invention.
| ≤ 200000000000 eV-1 cm⁻² |
InxGa₁-xAsS |
high-k dielectric constant threshold claimed | ≥ 2.5 dimensionless | high-k dielectric layer |
Unpassivated InGaAs/high-k dielectric interface defect density (background/prior art) | 10000000000000 cm⁻² eV-1 | InxGa₁-xAs |
Thickness | 4–150 nm | — |
Temperature | 200–400 °C | — |
Pressure | 0–3 Torr | — |
Temperature | 20–25 °C | — |
Temperature | ≥ 300 K | — |
Pressure | 0.001 Torr | — |
Pressure | ≤ 0.001 Torr | — |
Temperature | ≥ 700 °C | — |
MOSFET device
No layer stack recorded.
HEMT device
No layer stack recorded.
photovoltaic device
No layer stack recorded.
photodetector device
No layer stack recorded.
high-k dielectric layer
hydrogenated amorphous silicon
a-Si:H
gallium gadolinium oxide
(Ga₂O₃)1-x(Gd₂O₃)x
zinc sulfide
ZnS
cadmium sulfide
CdS
ammonium sulfide
(NH₄)2S
FIG. 4, can be deposited and formed on the sulfur-passivated interface surface by applying highly reactive precursors to the sulfur-passivated surface, or …
FIG. 10 is a cross-sectional side view of an example FET device according to an embodiment of the present invention.
| ≤ 200000000000 eV-1 cm⁻² |
InxGa₁-xAsS |
high-k dielectric constant threshold claimed | ≥ 2.5 dimensionless | high-k dielectric layer |
Unpassivated InGaAs/high-k dielectric interface defect density (background/prior art) | 10000000000000 cm⁻² eV-1 | InxGa₁-xAs |
Thickness | 4–150 nm | — |
Temperature | 200–400 °C | — |
Pressure | 0–3 Torr | — |
Temperature | 20–25 °C | — |
Temperature | ≥ 300 K | — |
Pressure | 0.001 Torr | — |
Pressure | ≤ 0.001 Torr | — |
Temperature | ≥ 700 °C | — |
MOSFET device
No layer stack recorded.
HEMT device
No layer stack recorded.
photovoltaic device
No layer stack recorded.
photodetector device
No layer stack recorded.
high-k dielectric layer
hydrogenated amorphous silicon
a-Si:H
gallium gadolinium oxide
(Ga₂O₃)1-x(Gd₂O₃)x
zinc sulfide
ZnS
cadmium sulfide
CdS
ammonium sulfide
(NH₄)2S
FIG. 4, can be deposited and formed on the sulfur-passivated interface surface by applying highly reactive precursors to the sulfur-passivated surface, or …
FIG. 10 is a cross-sectional side view of an example FET device according to an embodiment of the present invention.
| ≤ 200000000000 eV-1 cm⁻² |
InxGa₁-xAsS |
high-k dielectric constant threshold claimed | ≥ 2.5 dimensionless | high-k dielectric layer |
Unpassivated InGaAs/high-k dielectric interface defect density (background/prior art) | 10000000000000 cm⁻² eV-1 | InxGa₁-xAs |
Thickness | 4–150 nm | — |
Temperature | 200–400 °C | — |
Pressure | 0–3 Torr | — |
Temperature | 20–25 °C | — |
Temperature | ≥ 300 K | — |
Pressure | 0.001 Torr | — |
Pressure | ≤ 0.001 Torr | — |
Temperature | ≥ 700 °C | — |