Method for doping a GaN-base semiconductor

Claire AGRAFFEIL

Patent

Atlas literature

Patent

US 9,496,348

Method for doping a GaN-base semiconductor

Claire AGRAFFEIL

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

3 independent · 12 dependent

1
Independent
1-14. canceled
15
IndependentGaN-base semiconductor materialsilicon-base maskGaN-base p-n junction
A method for doping a semiconductor GaN-base to fabricate a p-n junction, comprising the following steps: -providing a substrate comprising a GaN-base semiconductor material layer covered by a silicon-base mask, -implanting dopant impurities in the mask so as to transfer additional dopant impurities of Si type by diﬀusion from the mask to the GaN-base semiconductor material layer to form an n-type area adjacent to a p-type area, -performing the rm al annealing conﬁgured to activate the dopant impurities and the additional dopant impurities.
1. 16
  Dependent← claim 15
  The method for doping a semiconductor according to claim 15, wherein the mask partially covers the substrate so as to deﬁne an area covered by the mask and an uncovered area.
2. 17
  Dependent← claim 15
  The method for doping a semiconductor according to claim 15, wherein the dopant impurities are of p-type.
3. 18
  Dependent← claim 15
  The method for doping a semiconductor according to claim 15, wherein the mean implantation depth of the dopant impurities is located at a distance at least equal to 300 nm from the interface between the mask and the semiconductor material layer so as to incorporate additional dopant impurities in the semiconductor material layer. -2- Application No. 14/855,76 1
4. 19
  Dependent← claim 15cap layer
  The method for doping a semiconductor according to claim 15, comprising a deposition step of a cap layer performed before the heat treatment step.
5. 24
  Dependent← claim 15
  The method for doping a semiconductor according to claim 15, wherein the implantation step is performed at a temperature comprised between 15 and 700 0C.
6. 25
  Dependent← claim 15
  The method for doping a semiconductor according to claim 15, wherein the heat treatment step is a combination of at least two anneals of diﬀerent durations and temperatures.
7. 27
  Dependent← claim 15silicon-base mask
  The method for doping a semiconductor according to claim 15, wherein the thickness of the mask is comprised between 2 and 400 nm. -3- Application No. 14/855,76 1
8. 28
  Dependent← claim 15
  The method for doping a semiconductor according to claim 15, wherein the thickness of the
21
Independent
The method for doping a semiconductor according to i c ~laim 19, wherein deposition of the cap layer is performed after the implantation step of the dopant impurities and of the additional dopant impurities.

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

GaN-base p-n junction

silicon-base masksilicon base mask

GaN-base semiconductor materialsemiconductor layer

Materials

Materials described outside the worked examples.

GaN-base semiconductor material

Semiconductor Substrate Layer

silicon-base mask

Implantation Mask And Dopant Source

Process steps

Additional fabrication and treatment steps described in the patent.

Ion Implantation And Thermal Anneal

Step 1

Temperature

15, 700°C

Process details

junction type:p-n

p type dopant:

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Thickness	2–400 nm	—

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Method for doping a GaN-base semiconductor | Matter42 Literature