Patent
Atlas literature
Patent
US 12,568,716 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1A is a cross-sectional side view of a gallium nitride 10 (GaN) engineered wafer in an initial stage accordance with embodiments of the invention in …
FIG. 2B with the non-crystalline 55 substrate layer removed and an metal layer attached to the bottom side of the GaN material layer in accordance with …
FIG. 3A is a top view of the GaN engineered wafer of
FIGS. 4A-4B show a flowchart of an exemplary method in accordance with aspects of the present invention in accordance with embodiments of the invention.
FIG. 5 is a side view of a first exemplary GaN device made in accordance with embodiments of the invention.
FIG. 6A is a side view of a second exemplary GaN device made in accordance with embodiments of the invention.
FIG. 7 is a side view of a fifth exemplary GaN device made in accordance with embodiments of the invention.
FIG. 8 is a side view of a sixth exemplary GaN device made in accordance with embodiments of the invention.
FIG. 9 is a side view of an exemplary light emitting GaN device made in accordance with embodiments of the inven- tion.
FIG. 25 1D, depicting individual die portions interconnected by the tether material layer in accordance with embodiments of the invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A wafer-scale method of making a gallium nitride (GaN) device die comprising: providing a GaN wafer including a GaN material layer, a non-crystalline substrate, and at least one etchable intermediate layer between the GaN material layer and the non-crystalline substrate, wherein the at least one etchable intermediate layer comprises a nucleation layer, a silicon material layer, and an etchable material layer; forming trenches through the GaN material layer and at least partially through the at least one etchable intermediate layer; forming one or more tether material layers on a first side of the GaN material layer and through portions of the trenches, thereby forming a set of tethers between the GaN material layer and the non-crystalline substrate; and removing the at least one etchable intermediate layer to expose a second side of the GaN material layer.
The method of claim 1, further comprising depositing at least one additional layer directly on the second side of the GaN material layer.
The method of claim 1, wherein removing the at least one etchable intermediate layer comprises removing the nucleation layer and the silicon material layer via etching.
The method of claim 1, wherein the etchable material layer is a hydrofluoric acid etchable material layer, the one or more tether material layers are resistant to hydrofluoric acid, and removing the hydrofluoric acid etchable material layer comprises etching with hydrofluoric acid.
The method of claim 1, wherein the etchable material layer is an anhydrous hydrofluoric vapor etchable material, the tether material layer is resistant to anhydrous hydroflu-oric vapor, and removing the anhydrous hydrofluoric acid etchable material layer comprises etching with anhydrous hydrofluoric vapor.
The method of claim 1, further comprising depositing a protective layer over at least a portion of a top of the GaN wafer, wherein the protective layer protects against hydro-fluoric acid etching, hydrofluoric acid plus oleum etching, or anhydrous hydrofluoric vapor etching.
The method of claim 1, wherein the GaN material layer comprises one or more device elements in contact therewith.
The method of claim 1, wherein the one or more tether material layers comprises a first tether material layer defin-ing a first set of tethers between the GaN material layer and the non-crystalline substrate and a photoresist layer forming a second set of tethers between the GaN material layer and the non-crystalline substrate.
The method of claim 1, further comprising attaching, by a releasable adhesive material, a wafer-scale carrier wafer package to the GaN wafer.
A wafer-scale method of making a gallium nitride (GaN) device die comprising: providing a GaN wafer including a GaN material layer, a non-crystalline substrate, and at least one etchable intermediate layer between the GaN material layer and the non-crystalline substrate; forming trenches through the GaN material layer and at least partially through the at least one etchable intermediate layer; forming one or more tether material layers on a first side of the GaN material layer and through portions of the trenches, thereby forming a set of tethers between the GaN material layer and the non-crystalline substrate; removing the at least one etchable intermediate layer to expose a second side of the GaN material layer; and chemical mechanical polishing the second side of the GaN material layer, resulting in the second side of the GaN material layer having a surface roughness of less than 1 nanometers (nm) Root Mean Square (RMS).
A wafer-scale method of making a gallium nitride (GaN) device die comprising: providing a GaN wafer including a GaN material layer, a non-crystalline substrate, and at least one etchable intermediate layer between the GaN material layer and the non-crystalline substrate; forming trenches through the GaN material layer and at least partially through the at least one etchable intermediate layer; forming one or more tether material layers on a first side of the GaN material layer and through portions of the trenches, thereby forming a set of tethers between the GaN material layer and the non-crystalline substrate; removing the at least one etchable intermediate layer to expose a second side of the GaN material layer; and attaching, by a releasable adhesive material, a wafer-scale carrier wafer package to the GaN wafer; wherein the carrier wafer package includes a carrier wafer and a second releasable adhesive material, and wherein the releasable adhesive material attaches the carrier wafer to the GaN wafer through the second releasable adhesive material; and wherein the carrier wafer package further includes a laser release layer between the carrier wafer and the second releasable adhesive material, and the carrier wafer is transparent to laser light.
A wafer-scale method of making a gallium nitride (GaN) device die comprising: providing a GaN wafer including a GaN material layer, a non-crystalline substrate, and at least one etchable intermediate layer between the GaN material layer and the non-crystalline substrate; forming trenches through the GaN material layer and at least partially through the at least one etchable intermediate layer; forming one or more tether material layers on a first side of the GaN material layer and through portions of the trenches, thereby forming a set of tethers between the GaN material layer and the non-crystalline substrate; removing the at least one etchable intermediate layer to expose a second side of the GaN material layer; attaching, by a releasable adhesive material, a wafer-scale carrier wafer package to the GaN wafer; breaking or removing a portion of the set of tethers from the GaN wafer to separate the non-crystalline substrate from the GaN material layer; attaching an adhesive tape to a bottom side of the GaN wafer; and removing the carrier wafer package from the GaN mate-rial layer.
The method of claim 17, further comprising transfer-ring the GaN device die using a wafer-scale transfer method or a sequential wafer-scale transfer method. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN device die
Materials described outside the worked examples.
GaN material layer
GaN
non-crystalline substrate
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN material layer second side surface roughness after CMP | ≤ 1 nm RMS | GaN |
GaN material layer surface roughness (description embodiment) | ≤ 0.5 nm RMS |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 14
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,568,716 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1A is a cross-sectional side view of a gallium nitride 10 (GaN) engineered wafer in an initial stage accordance with embodiments of the invention in …
FIG. 2B with the non-crystalline 55 substrate layer removed and an metal layer attached to the bottom side of the GaN material layer in accordance with …
FIG. 3A is a top view of the GaN engineered wafer of
FIGS. 4A-4B show a flowchart of an exemplary method in accordance with aspects of the present invention in accordance with embodiments of the invention.
FIG. 5 is a side view of a first exemplary GaN device made in accordance with embodiments of the invention.
FIG. 6A is a side view of a second exemplary GaN device made in accordance with embodiments of the invention.
FIG. 7 is a side view of a fifth exemplary GaN device made in accordance with embodiments of the invention.
FIG. 8 is a side view of a sixth exemplary GaN device made in accordance with embodiments of the invention.
FIG. 9 is a side view of an exemplary light emitting GaN device made in accordance with embodiments of the inven- tion.
FIG. 25 1D, depicting individual die portions interconnected by the tether material layer in accordance with embodiments of the invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A wafer-scale method of making a gallium nitride (GaN) device die comprising: providing a GaN wafer including a GaN material layer, a non-crystalline substrate, and at least one etchable intermediate layer between the GaN material layer and the non-crystalline substrate, wherein the at least one etchable intermediate layer comprises a nucleation layer, a silicon material layer, and an etchable material layer; forming trenches through the GaN material layer and at least partially through the at least one etchable intermediate layer; forming one or more tether material layers on a first side of the GaN material layer and through portions of the trenches, thereby forming a set of tethers between the GaN material layer and the non-crystalline substrate; and removing the at least one etchable intermediate layer to expose a second side of the GaN material layer.
The method of claim 1, further comprising depositing at least one additional layer directly on the second side of the GaN material layer.
The method of claim 1, wherein removing the at least one etchable intermediate layer comprises removing the nucleation layer and the silicon material layer via etching.
The method of claim 1, wherein the etchable material layer is a hydrofluoric acid etchable material layer, the one or more tether material layers are resistant to hydrofluoric acid, and removing the hydrofluoric acid etchable material layer comprises etching with hydrofluoric acid.
The method of claim 1, wherein the etchable material layer is an anhydrous hydrofluoric vapor etchable material, the tether material layer is resistant to anhydrous hydroflu-oric vapor, and removing the anhydrous hydrofluoric acid etchable material layer comprises etching with anhydrous hydrofluoric vapor.
The method of claim 1, further comprising depositing a protective layer over at least a portion of a top of the GaN wafer, wherein the protective layer protects against hydro-fluoric acid etching, hydrofluoric acid plus oleum etching, or anhydrous hydrofluoric vapor etching.
The method of claim 1, wherein the GaN material layer comprises one or more device elements in contact therewith.
The method of claim 1, wherein the one or more tether material layers comprises a first tether material layer defin-ing a first set of tethers between the GaN material layer and the non-crystalline substrate and a photoresist layer forming a second set of tethers between the GaN material layer and the non-crystalline substrate.
The method of claim 1, further comprising attaching, by a releasable adhesive material, a wafer-scale carrier wafer package to the GaN wafer.
A wafer-scale method of making a gallium nitride (GaN) device die comprising: providing a GaN wafer including a GaN material layer, a non-crystalline substrate, and at least one etchable intermediate layer between the GaN material layer and the non-crystalline substrate; forming trenches through the GaN material layer and at least partially through the at least one etchable intermediate layer; forming one or more tether material layers on a first side of the GaN material layer and through portions of the trenches, thereby forming a set of tethers between the GaN material layer and the non-crystalline substrate; removing the at least one etchable intermediate layer to expose a second side of the GaN material layer; and chemical mechanical polishing the second side of the GaN material layer, resulting in the second side of the GaN material layer having a surface roughness of less than 1 nanometers (nm) Root Mean Square (RMS).
A wafer-scale method of making a gallium nitride (GaN) device die comprising: providing a GaN wafer including a GaN material layer, a non-crystalline substrate, and at least one etchable intermediate layer between the GaN material layer and the non-crystalline substrate; forming trenches through the GaN material layer and at least partially through the at least one etchable intermediate layer; forming one or more tether material layers on a first side of the GaN material layer and through portions of the trenches, thereby forming a set of tethers between the GaN material layer and the non-crystalline substrate; removing the at least one etchable intermediate layer to expose a second side of the GaN material layer; and attaching, by a releasable adhesive material, a wafer-scale carrier wafer package to the GaN wafer; wherein the carrier wafer package includes a carrier wafer and a second releasable adhesive material, and wherein the releasable adhesive material attaches the carrier wafer to the GaN wafer through the second releasable adhesive material; and wherein the carrier wafer package further includes a laser release layer between the carrier wafer and the second releasable adhesive material, and the carrier wafer is transparent to laser light.
A wafer-scale method of making a gallium nitride (GaN) device die comprising: providing a GaN wafer including a GaN material layer, a non-crystalline substrate, and at least one etchable intermediate layer between the GaN material layer and the non-crystalline substrate; forming trenches through the GaN material layer and at least partially through the at least one etchable intermediate layer; forming one or more tether material layers on a first side of the GaN material layer and through portions of the trenches, thereby forming a set of tethers between the GaN material layer and the non-crystalline substrate; removing the at least one etchable intermediate layer to expose a second side of the GaN material layer; attaching, by a releasable adhesive material, a wafer-scale carrier wafer package to the GaN wafer; breaking or removing a portion of the set of tethers from the GaN wafer to separate the non-crystalline substrate from the GaN material layer; attaching an adhesive tape to a bottom side of the GaN wafer; and removing the carrier wafer package from the GaN mate-rial layer.
The method of claim 17, further comprising transfer-ring the GaN device die using a wafer-scale transfer method or a sequential wafer-scale transfer method. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN device die
Materials described outside the worked examples.
GaN material layer
GaN
non-crystalline substrate
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN material layer second side surface roughness after CMP | ≤ 1 nm RMS | GaN |
GaN material layer surface roughness (description embodiment) | ≤ 0.5 nm RMS |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 14
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,568,716 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1A is a cross-sectional side view of a gallium nitride 10 (GaN) engineered wafer in an initial stage accordance with embodiments of the invention in …
FIG. 2B with the non-crystalline 55 substrate layer removed and an metal layer attached to the bottom side of the GaN material layer in accordance with …
FIG. 3A is a top view of the GaN engineered wafer of
FIGS. 4A-4B show a flowchart of an exemplary method in accordance with aspects of the present invention in accordance with embodiments of the invention.
FIG. 5 is a side view of a first exemplary GaN device made in accordance with embodiments of the invention.
FIG. 6A is a side view of a second exemplary GaN device made in accordance with embodiments of the invention.
FIG. 7 is a side view of a fifth exemplary GaN device made in accordance with embodiments of the invention.
FIG. 8 is a side view of a sixth exemplary GaN device made in accordance with embodiments of the invention.
FIG. 9 is a side view of an exemplary light emitting GaN device made in accordance with embodiments of the inven- tion.
FIG. 25 1D, depicting individual die portions interconnected by the tether material layer in accordance with embodiments of the invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A wafer-scale method of making a gallium nitride (GaN) device die comprising: providing a GaN wafer including a GaN material layer, a non-crystalline substrate, and at least one etchable intermediate layer between the GaN material layer and the non-crystalline substrate, wherein the at least one etchable intermediate layer comprises a nucleation layer, a silicon material layer, and an etchable material layer; forming trenches through the GaN material layer and at least partially through the at least one etchable intermediate layer; forming one or more tether material layers on a first side of the GaN material layer and through portions of the trenches, thereby forming a set of tethers between the GaN material layer and the non-crystalline substrate; and removing the at least one etchable intermediate layer to expose a second side of the GaN material layer.
The method of claim 1, further comprising depositing at least one additional layer directly on the second side of the GaN material layer.
The method of claim 1, wherein removing the at least one etchable intermediate layer comprises removing the nucleation layer and the silicon material layer via etching.
The method of claim 1, wherein the etchable material layer is a hydrofluoric acid etchable material layer, the one or more tether material layers are resistant to hydrofluoric acid, and removing the hydrofluoric acid etchable material layer comprises etching with hydrofluoric acid.
The method of claim 1, wherein the etchable material layer is an anhydrous hydrofluoric vapor etchable material, the tether material layer is resistant to anhydrous hydroflu-oric vapor, and removing the anhydrous hydrofluoric acid etchable material layer comprises etching with anhydrous hydrofluoric vapor.
The method of claim 1, further comprising depositing a protective layer over at least a portion of a top of the GaN wafer, wherein the protective layer protects against hydro-fluoric acid etching, hydrofluoric acid plus oleum etching, or anhydrous hydrofluoric vapor etching.
The method of claim 1, wherein the GaN material layer comprises one or more device elements in contact therewith.
The method of claim 1, wherein the one or more tether material layers comprises a first tether material layer defin-ing a first set of tethers between the GaN material layer and the non-crystalline substrate and a photoresist layer forming a second set of tethers between the GaN material layer and the non-crystalline substrate.
The method of claim 1, further comprising attaching, by a releasable adhesive material, a wafer-scale carrier wafer package to the GaN wafer.
A wafer-scale method of making a gallium nitride (GaN) device die comprising: providing a GaN wafer including a GaN material layer, a non-crystalline substrate, and at least one etchable intermediate layer between the GaN material layer and the non-crystalline substrate; forming trenches through the GaN material layer and at least partially through the at least one etchable intermediate layer; forming one or more tether material layers on a first side of the GaN material layer and through portions of the trenches, thereby forming a set of tethers between the GaN material layer and the non-crystalline substrate; removing the at least one etchable intermediate layer to expose a second side of the GaN material layer; and chemical mechanical polishing the second side of the GaN material layer, resulting in the second side of the GaN material layer having a surface roughness of less than 1 nanometers (nm) Root Mean Square (RMS).
A wafer-scale method of making a gallium nitride (GaN) device die comprising: providing a GaN wafer including a GaN material layer, a non-crystalline substrate, and at least one etchable intermediate layer between the GaN material layer and the non-crystalline substrate; forming trenches through the GaN material layer and at least partially through the at least one etchable intermediate layer; forming one or more tether material layers on a first side of the GaN material layer and through portions of the trenches, thereby forming a set of tethers between the GaN material layer and the non-crystalline substrate; removing the at least one etchable intermediate layer to expose a second side of the GaN material layer; and attaching, by a releasable adhesive material, a wafer-scale carrier wafer package to the GaN wafer; wherein the carrier wafer package includes a carrier wafer and a second releasable adhesive material, and wherein the releasable adhesive material attaches the carrier wafer to the GaN wafer through the second releasable adhesive material; and wherein the carrier wafer package further includes a laser release layer between the carrier wafer and the second releasable adhesive material, and the carrier wafer is transparent to laser light.
A wafer-scale method of making a gallium nitride (GaN) device die comprising: providing a GaN wafer including a GaN material layer, a non-crystalline substrate, and at least one etchable intermediate layer between the GaN material layer and the non-crystalline substrate; forming trenches through the GaN material layer and at least partially through the at least one etchable intermediate layer; forming one or more tether material layers on a first side of the GaN material layer and through portions of the trenches, thereby forming a set of tethers between the GaN material layer and the non-crystalline substrate; removing the at least one etchable intermediate layer to expose a second side of the GaN material layer; attaching, by a releasable adhesive material, a wafer-scale carrier wafer package to the GaN wafer; breaking or removing a portion of the set of tethers from the GaN wafer to separate the non-crystalline substrate from the GaN material layer; attaching an adhesive tape to a bottom side of the GaN wafer; and removing the carrier wafer package from the GaN mate-rial layer.
The method of claim 17, further comprising transfer-ring the GaN device die using a wafer-scale transfer method or a sequential wafer-scale transfer method. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN device die
Materials described outside the worked examples.
GaN material layer
GaN
non-crystalline substrate
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN material layer second side surface roughness after CMP | ≤ 1 nm RMS | GaN |
GaN material layer surface roughness (description embodiment) | ≤ 0.5 nm RMS |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 14
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,568,716 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1A is a cross-sectional side view of a gallium nitride 10 (GaN) engineered wafer in an initial stage accordance with embodiments of the invention in …
FIG. 2B with the non-crystalline 55 substrate layer removed and an metal layer attached to the bottom side of the GaN material layer in accordance with …
FIG. 3A is a top view of the GaN engineered wafer of
FIGS. 4A-4B show a flowchart of an exemplary method in accordance with aspects of the present invention in accordance with embodiments of the invention.
FIG. 5 is a side view of a first exemplary GaN device made in accordance with embodiments of the invention.
FIG. 6A is a side view of a second exemplary GaN device made in accordance with embodiments of the invention.
FIG. 7 is a side view of a fifth exemplary GaN device made in accordance with embodiments of the invention.
FIG. 8 is a side view of a sixth exemplary GaN device made in accordance with embodiments of the invention.
FIG. 9 is a side view of an exemplary light emitting GaN device made in accordance with embodiments of the inven- tion.
FIG. 25 1D, depicting individual die portions interconnected by the tether material layer in accordance with embodiments of the invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A wafer-scale method of making a gallium nitride (GaN) device die comprising: providing a GaN wafer including a GaN material layer, a non-crystalline substrate, and at least one etchable intermediate layer between the GaN material layer and the non-crystalline substrate, wherein the at least one etchable intermediate layer comprises a nucleation layer, a silicon material layer, and an etchable material layer; forming trenches through the GaN material layer and at least partially through the at least one etchable intermediate layer; forming one or more tether material layers on a first side of the GaN material layer and through portions of the trenches, thereby forming a set of tethers between the GaN material layer and the non-crystalline substrate; and removing the at least one etchable intermediate layer to expose a second side of the GaN material layer.
The method of claim 1, further comprising depositing at least one additional layer directly on the second side of the GaN material layer.
The method of claim 1, wherein removing the at least one etchable intermediate layer comprises removing the nucleation layer and the silicon material layer via etching.
The method of claim 1, wherein the etchable material layer is a hydrofluoric acid etchable material layer, the one or more tether material layers are resistant to hydrofluoric acid, and removing the hydrofluoric acid etchable material layer comprises etching with hydrofluoric acid.
The method of claim 1, wherein the etchable material layer is an anhydrous hydrofluoric vapor etchable material, the tether material layer is resistant to anhydrous hydroflu-oric vapor, and removing the anhydrous hydrofluoric acid etchable material layer comprises etching with anhydrous hydrofluoric vapor.
The method of claim 1, further comprising depositing a protective layer over at least a portion of a top of the GaN wafer, wherein the protective layer protects against hydro-fluoric acid etching, hydrofluoric acid plus oleum etching, or anhydrous hydrofluoric vapor etching.
The method of claim 1, wherein the GaN material layer comprises one or more device elements in contact therewith.
The method of claim 1, wherein the one or more tether material layers comprises a first tether material layer defin-ing a first set of tethers between the GaN material layer and the non-crystalline substrate and a photoresist layer forming a second set of tethers between the GaN material layer and the non-crystalline substrate.
The method of claim 1, further comprising attaching, by a releasable adhesive material, a wafer-scale carrier wafer package to the GaN wafer.
A wafer-scale method of making a gallium nitride (GaN) device die comprising: providing a GaN wafer including a GaN material layer, a non-crystalline substrate, and at least one etchable intermediate layer between the GaN material layer and the non-crystalline substrate; forming trenches through the GaN material layer and at least partially through the at least one etchable intermediate layer; forming one or more tether material layers on a first side of the GaN material layer and through portions of the trenches, thereby forming a set of tethers between the GaN material layer and the non-crystalline substrate; removing the at least one etchable intermediate layer to expose a second side of the GaN material layer; and chemical mechanical polishing the second side of the GaN material layer, resulting in the second side of the GaN material layer having a surface roughness of less than 1 nanometers (nm) Root Mean Square (RMS).
A wafer-scale method of making a gallium nitride (GaN) device die comprising: providing a GaN wafer including a GaN material layer, a non-crystalline substrate, and at least one etchable intermediate layer between the GaN material layer and the non-crystalline substrate; forming trenches through the GaN material layer and at least partially through the at least one etchable intermediate layer; forming one or more tether material layers on a first side of the GaN material layer and through portions of the trenches, thereby forming a set of tethers between the GaN material layer and the non-crystalline substrate; removing the at least one etchable intermediate layer to expose a second side of the GaN material layer; and attaching, by a releasable adhesive material, a wafer-scale carrier wafer package to the GaN wafer; wherein the carrier wafer package includes a carrier wafer and a second releasable adhesive material, and wherein the releasable adhesive material attaches the carrier wafer to the GaN wafer through the second releasable adhesive material; and wherein the carrier wafer package further includes a laser release layer between the carrier wafer and the second releasable adhesive material, and the carrier wafer is transparent to laser light.
A wafer-scale method of making a gallium nitride (GaN) device die comprising: providing a GaN wafer including a GaN material layer, a non-crystalline substrate, and at least one etchable intermediate layer between the GaN material layer and the non-crystalline substrate; forming trenches through the GaN material layer and at least partially through the at least one etchable intermediate layer; forming one or more tether material layers on a first side of the GaN material layer and through portions of the trenches, thereby forming a set of tethers between the GaN material layer and the non-crystalline substrate; removing the at least one etchable intermediate layer to expose a second side of the GaN material layer; attaching, by a releasable adhesive material, a wafer-scale carrier wafer package to the GaN wafer; breaking or removing a portion of the set of tethers from the GaN wafer to separate the non-crystalline substrate from the GaN material layer; attaching an adhesive tape to a bottom side of the GaN wafer; and removing the carrier wafer package from the GaN mate-rial layer.
The method of claim 17, further comprising transfer-ring the GaN device die using a wafer-scale transfer method or a sequential wafer-scale transfer method. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN device die
Materials described outside the worked examples.
GaN material layer
GaN
non-crystalline substrate
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN material layer second side surface roughness after CMP | ≤ 1 nm RMS | GaN |
GaN material layer surface roughness (description embodiment) | ≤ 0.5 nm RMS |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 14
Related documents with shared materials, methods, properties, or citations.
nucleation layer
aluminum nitride nucleation layer
AlN
silicon material layer
Si
etchable material layer
protective layer
photoresist layer
releasable adhesive material
Thickness | 0.3–50 µm | — |
Thickness | 300–50000 nm | — |
Temperature | 200–300 °C | — |
Thickness | 300–100000 nm | — |
Thickness | 2–100 µm | — |
Thickness | 0.5–50 µm | — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≤ 200 nm | — |
Temperature | ≤ 250 °C | — |
Thickness | ≤ 0.3 µm | — |
Thickness | ≤ 50 µm | — |
Thickness | ≤ 1 nm | — |
Temperature | ≥ 300 °C | — |
Cited non-patent literature · 3
nucleation layer
aluminum nitride nucleation layer
AlN
silicon material layer
Si
etchable material layer
protective layer
photoresist layer
releasable adhesive material
Thickness | 0.3–50 µm | — |
Thickness | 300–50000 nm | — |
Temperature | 200–300 °C | — |
Thickness | 300–100000 nm | — |
Thickness | 2–100 µm | — |
Thickness | 0.5–50 µm | — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≤ 200 nm | — |
Temperature | ≤ 250 °C | — |
Thickness | ≤ 0.3 µm | — |
Thickness | ≤ 50 µm | — |
Thickness | ≤ 1 nm | — |
Temperature | ≥ 300 °C | — |
Cited non-patent literature · 3
nucleation layer
aluminum nitride nucleation layer
AlN
silicon material layer
Si
etchable material layer
protective layer
photoresist layer
releasable adhesive material
Thickness | 0.3–50 µm | — |
Thickness | 300–50000 nm | — |
Temperature | 200–300 °C | — |
Thickness | 300–100000 nm | — |
Thickness | 2–100 µm | — |
Thickness | 0.5–50 µm | — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≤ 200 nm | — |
Temperature | ≤ 250 °C | — |
Thickness | ≤ 0.3 µm | — |
Thickness | ≤ 50 µm | — |
Thickness | ≤ 1 nm | — |
Temperature | ≥ 300 °C | — |
Cited non-patent literature · 3
nucleation layer
aluminum nitride nucleation layer
AlN
silicon material layer
Si
etchable material layer
protective layer
photoresist layer
releasable adhesive material
Thickness | 0.3–50 µm | — |
Thickness | 300–50000 nm | — |
Temperature | 200–300 °C | — |
Thickness | 300–100000 nm | — |
Thickness | 2–100 µm | — |
Thickness | 0.5–50 µm | — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≤ 200 nm | — |
Temperature | ≤ 250 °C | — |
Thickness | ≤ 0.3 µm | — |
Thickness | ≤ 50 µm | — |
Thickness | ≤ 1 nm | — |
Temperature | ≥ 300 °C | — |
Cited non-patent literature · 3
