Patent
US 9,230,801GRAPHENE STRUCTURE AND METHOD OF FABRICATING THE SAME
Byoung-lyong CHOI
US
Copyright © 2026 Matter42. All rights reserved.
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US 9,230,801Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is a schematic perspective view of a graphene structure according to example embodiments; [0021]
FIGS. 2A through 2D are perspective views showing an example method of forming the graphene structure of
FIGS. 3A through 3D are perspective views showing another method of forming the graphene structure of
FIG. 4 is a schematic cross-sectional view of a graphene structure according to example embodiments; [0025]
FIG. 5 is a schematic cross-sectional view of a modified version of the graphene structure of
FIG. 6 is a schematic cross-sectional view of another modified version of the graphene structure of
FIG. 7 is a schematic cross-sectional view of another modified version of the graphene structure of
FIGS. 8A through 8E are cross-sectional views showing an example method of forming the graphene structure of
FIGS. 9A through 9E are cross-sectional views showing an example method of forming the graphene structure of
FIG. 10 is a schematic cross-sectional view of a graphene structure according to example embodiments; [0031]
FIGS. 11 A through 11 D are cross-sectional views showing an example method of forming the graphene structure of
FIG. 12 is a perspective view of a graphene structure according to example embodiments; [0033]
FIG. 13 is a schematic cutaway perspective view of a graphene structure according to example embodiments; [0034]
FIG. 14 is a perspective view of a graphene structure according to example embodiments; and [0035]
FIGS. 15A through 15D are cross-sectional views showing an example method of forming the graphene structure of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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A graphene structure comprising: a first supporting layer; a first graphene on the first supporting layer; a second supporting layer on the first graphene; and a second graphene on the second supporting layer, wherein the first and second supporting layers are fo r med of Ge or include a Ge coating on upper surfaces thereof, and wherein the first supporting layer, the first graphene, the second supporting layer, and the second graphene are stacked.
The graphene structure of claim 6, wherein at least one of the first graphene and the second graphene is patterned.
The graphene structure of claim 6, further comprising: a third supporting layer on the second graphene; and a third graphene on the third supporting layer to form a multi-layer graphene structure.
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(Withdrawn-Currently Amended) A method of forming a graphene structure, the method comprising: placing a three dimensional D) template in a reaction chamber, the 3D template including a first Ge layer on an upper surface of the 3D template; and Page 2 Application No.: 13/229,183 Attorney Docket No.: 2557S I-00 1620-US SVG 13229183.07-22-2015.ICONKFV₈PXXIFW4.CLM.2.1.175.97.315.118.svg 0.07 0.467 Chemistry Black and white SVG 13229183.07-22-2015.ICONKFV₈PXXIFW4.CLM.2.1.625.74.777.108.svg 0.113 0.507 Chemistry Black and white growing a first graphene along at least a portion of an outer circumference of SVG 13229183.07-22-2015.ICONKFV₈PXXIFW4.CLM.2.4.259.426.1359.1389.svg 3.21 3.667 Chemistry Black and white raphene; and nd Ge layer, aphene, the second Ge layer, and the e is any one of a polygonal column, a on=Ge--materia,-and-a first Ge layer-is
The method of claim 15, wherein the first Ge layer is removed after for m ing the first graphene. withdrawn
The method of claim 15, wherein the first Ge layer is for m ed according to a pattern and the first graphene is grown along the pattern of the first Ge layer. withdrawn
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(Withdrawn-Currently Amended) The method of claim 18 15, wherein forming the second Ge layer on the first graphene comprises: forming a non-Ge layer on the first graphene using a non-Ge material; and forming a second Ge layer on the non-Ge layer.
(Withdrawn-Currently Amended) The method of claim 1815, further comprising: for midn g a multi-layer graphene by repeatedly stacking another Ge layer and another graphene on the second graphene.
The method of claim 20, further comprising: Page 3 Application No.: 13/229,183 Attorney Docket No.: 2557S I -001620-US SVG 13229183.07-22-2015.ICONKFV₈PXXIFW4.CLM.3.1.181.103.319.124.svg 0.07 0.46 Chemistry Black and white SVG 13229183.07-22-2015.ICONKFV₈PXXIFW4.CLM.3.1.630.81.780.115.svg 0.113 0.50 Chemistry Black and white forem ing a plurality of holes in the multi-layer graphene; and filling the plurality of holes with a functional material. withdrawn
(Withdrawn-Curren t ly Amended) The method of claim 1815, further comprising: etching the first graphene and the second graphene according to a pattern.
The method of claim 22, wherein edges of the first graphene and the second graphene exposed by etching are hydrogen-ter mi nated or treated with functional groups. withdrawn
The method of claim 22, further comprising: forming a third graphene on side surfaces of the first graphene and the second graphene exposed by etching. withdrawn
(Withdrawn-Currently Amended) The method of claim 1215, wherein the first graphene is at least one of a one-atom layer, two-atom layers and three-atom layers. *** END CLAIM LISTING *** Page 4
Layer stacks claimed or described, ordered top of device to substrate.
stacked graphene structure
multi-layer graphene structure
Materials described outside the worked examples.
graphene
germanium
Ge
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 100–1000000 nm | — |
Pressure | 0.1–760 torr |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,230,801Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is a schematic perspective view of a graphene structure according to example embodiments; [0021]
FIGS. 2A through 2D are perspective views showing an example method of forming the graphene structure of
FIGS. 3A through 3D are perspective views showing another method of forming the graphene structure of
FIG. 4 is a schematic cross-sectional view of a graphene structure according to example embodiments; [0025]
FIG. 5 is a schematic cross-sectional view of a modified version of the graphene structure of
FIG. 6 is a schematic cross-sectional view of another modified version of the graphene structure of
FIG. 7 is a schematic cross-sectional view of another modified version of the graphene structure of
FIGS. 8A through 8E are cross-sectional views showing an example method of forming the graphene structure of
FIGS. 9A through 9E are cross-sectional views showing an example method of forming the graphene structure of
FIG. 10 is a schematic cross-sectional view of a graphene structure according to example embodiments; [0031]
FIGS. 11 A through 11 D are cross-sectional views showing an example method of forming the graphene structure of
FIG. 12 is a perspective view of a graphene structure according to example embodiments; [0033]
FIG. 13 is a schematic cutaway perspective view of a graphene structure according to example embodiments; [0034]
FIG. 14 is a perspective view of a graphene structure according to example embodiments; and [0035]
FIGS. 15A through 15D are cross-sectional views showing an example method of forming the graphene structure of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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A graphene structure comprising: a first supporting layer; a first graphene on the first supporting layer; a second supporting layer on the first graphene; and a second graphene on the second supporting layer, wherein the first and second supporting layers are fo r med of Ge or include a Ge coating on upper surfaces thereof, and wherein the first supporting layer, the first graphene, the second supporting layer, and the second graphene are stacked.
The graphene structure of claim 6, wherein at least one of the first graphene and the second graphene is patterned.
The graphene structure of claim 6, further comprising: a third supporting layer on the second graphene; and a third graphene on the third supporting layer to form a multi-layer graphene structure.
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(Withdrawn-Currently Amended) A method of forming a graphene structure, the method comprising: placing a three dimensional D) template in a reaction chamber, the 3D template including a first Ge layer on an upper surface of the 3D template; and Page 2 Application No.: 13/229,183 Attorney Docket No.: 2557S I-00 1620-US SVG 13229183.07-22-2015.ICONKFV₈PXXIFW4.CLM.2.1.175.97.315.118.svg 0.07 0.467 Chemistry Black and white SVG 13229183.07-22-2015.ICONKFV₈PXXIFW4.CLM.2.1.625.74.777.108.svg 0.113 0.507 Chemistry Black and white growing a first graphene along at least a portion of an outer circumference of SVG 13229183.07-22-2015.ICONKFV₈PXXIFW4.CLM.2.4.259.426.1359.1389.svg 3.21 3.667 Chemistry Black and white raphene; and nd Ge layer, aphene, the second Ge layer, and the e is any one of a polygonal column, a on=Ge--materia,-and-a first Ge layer-is
The method of claim 15, wherein the first Ge layer is removed after for m ing the first graphene. withdrawn
The method of claim 15, wherein the first Ge layer is for m ed according to a pattern and the first graphene is grown along the pattern of the first Ge layer. withdrawn
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(Withdrawn-Currently Amended) The method of claim 18 15, wherein forming the second Ge layer on the first graphene comprises: forming a non-Ge layer on the first graphene using a non-Ge material; and forming a second Ge layer on the non-Ge layer.
(Withdrawn-Currently Amended) The method of claim 1815, further comprising: for midn g a multi-layer graphene by repeatedly stacking another Ge layer and another graphene on the second graphene.
The method of claim 20, further comprising: Page 3 Application No.: 13/229,183 Attorney Docket No.: 2557S I -001620-US SVG 13229183.07-22-2015.ICONKFV₈PXXIFW4.CLM.3.1.181.103.319.124.svg 0.07 0.46 Chemistry Black and white SVG 13229183.07-22-2015.ICONKFV₈PXXIFW4.CLM.3.1.630.81.780.115.svg 0.113 0.50 Chemistry Black and white forem ing a plurality of holes in the multi-layer graphene; and filling the plurality of holes with a functional material. withdrawn
(Withdrawn-Curren t ly Amended) The method of claim 1815, further comprising: etching the first graphene and the second graphene according to a pattern.
The method of claim 22, wherein edges of the first graphene and the second graphene exposed by etching are hydrogen-ter mi nated or treated with functional groups. withdrawn
The method of claim 22, further comprising: forming a third graphene on side surfaces of the first graphene and the second graphene exposed by etching. withdrawn
(Withdrawn-Currently Amended) The method of claim 1215, wherein the first graphene is at least one of a one-atom layer, two-atom layers and three-atom layers. *** END CLAIM LISTING *** Page 4
Layer stacks claimed or described, ordered top of device to substrate.
stacked graphene structure
multi-layer graphene structure
Materials described outside the worked examples.
graphene
germanium
Ge
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 100–1000000 nm | — |
Pressure | 0.1–760 torr |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,230,801Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is a schematic perspective view of a graphene structure according to example embodiments; [0021]
FIGS. 2A through 2D are perspective views showing an example method of forming the graphene structure of
FIGS. 3A through 3D are perspective views showing another method of forming the graphene structure of
FIG. 4 is a schematic cross-sectional view of a graphene structure according to example embodiments; [0025]
FIG. 5 is a schematic cross-sectional view of a modified version of the graphene structure of
FIG. 6 is a schematic cross-sectional view of another modified version of the graphene structure of
FIG. 7 is a schematic cross-sectional view of another modified version of the graphene structure of
FIGS. 8A through 8E are cross-sectional views showing an example method of forming the graphene structure of
FIGS. 9A through 9E are cross-sectional views showing an example method of forming the graphene structure of
FIG. 10 is a schematic cross-sectional view of a graphene structure according to example embodiments; [0031]
FIGS. 11 A through 11 D are cross-sectional views showing an example method of forming the graphene structure of
FIG. 12 is a perspective view of a graphene structure according to example embodiments; [0033]
FIG. 13 is a schematic cutaway perspective view of a graphene structure according to example embodiments; [0034]
FIG. 14 is a perspective view of a graphene structure according to example embodiments; and [0035]
FIGS. 15A through 15D are cross-sectional views showing an example method of forming the graphene structure of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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canceled
canceled
canceled
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A graphene structure comprising: a first supporting layer; a first graphene on the first supporting layer; a second supporting layer on the first graphene; and a second graphene on the second supporting layer, wherein the first and second supporting layers are fo r med of Ge or include a Ge coating on upper surfaces thereof, and wherein the first supporting layer, the first graphene, the second supporting layer, and the second graphene are stacked.
The graphene structure of claim 6, wherein at least one of the first graphene and the second graphene is patterned.
The graphene structure of claim 6, further comprising: a third supporting layer on the second graphene; and a third graphene on the third supporting layer to form a multi-layer graphene structure.
. canceled
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canceled
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(Withdrawn-Currently Amended) A method of forming a graphene structure, the method comprising: placing a three dimensional D) template in a reaction chamber, the 3D template including a first Ge layer on an upper surface of the 3D template; and Page 2 Application No.: 13/229,183 Attorney Docket No.: 2557S I-00 1620-US SVG 13229183.07-22-2015.ICONKFV₈PXXIFW4.CLM.2.1.175.97.315.118.svg 0.07 0.467 Chemistry Black and white SVG 13229183.07-22-2015.ICONKFV₈PXXIFW4.CLM.2.1.625.74.777.108.svg 0.113 0.507 Chemistry Black and white growing a first graphene along at least a portion of an outer circumference of SVG 13229183.07-22-2015.ICONKFV₈PXXIFW4.CLM.2.4.259.426.1359.1389.svg 3.21 3.667 Chemistry Black and white raphene; and nd Ge layer, aphene, the second Ge layer, and the e is any one of a polygonal column, a on=Ge--materia,-and-a first Ge layer-is
The method of claim 15, wherein the first Ge layer is removed after for m ing the first graphene. withdrawn
The method of claim 15, wherein the first Ge layer is for m ed according to a pattern and the first graphene is grown along the pattern of the first Ge layer. withdrawn
. canceled
(Withdrawn-Currently Amended) The method of claim 18 15, wherein forming the second Ge layer on the first graphene comprises: forming a non-Ge layer on the first graphene using a non-Ge material; and forming a second Ge layer on the non-Ge layer.
(Withdrawn-Currently Amended) The method of claim 1815, further comprising: for midn g a multi-layer graphene by repeatedly stacking another Ge layer and another graphene on the second graphene.
The method of claim 20, further comprising: Page 3 Application No.: 13/229,183 Attorney Docket No.: 2557S I -001620-US SVG 13229183.07-22-2015.ICONKFV₈PXXIFW4.CLM.3.1.181.103.319.124.svg 0.07 0.46 Chemistry Black and white SVG 13229183.07-22-2015.ICONKFV₈PXXIFW4.CLM.3.1.630.81.780.115.svg 0.113 0.50 Chemistry Black and white forem ing a plurality of holes in the multi-layer graphene; and filling the plurality of holes with a functional material. withdrawn
(Withdrawn-Curren t ly Amended) The method of claim 1815, further comprising: etching the first graphene and the second graphene according to a pattern.
The method of claim 22, wherein edges of the first graphene and the second graphene exposed by etching are hydrogen-ter mi nated or treated with functional groups. withdrawn
The method of claim 22, further comprising: forming a third graphene on side surfaces of the first graphene and the second graphene exposed by etching. withdrawn
(Withdrawn-Currently Amended) The method of claim 1215, wherein the first graphene is at least one of a one-atom layer, two-atom layers and three-atom layers. *** END CLAIM LISTING *** Page 4
Layer stacks claimed or described, ordered top of device to substrate.
stacked graphene structure
multi-layer graphene structure
Materials described outside the worked examples.
graphene
germanium
Ge
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 100–1000000 nm | — |
Pressure | 0.1–760 torr |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,230,801Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is a schematic perspective view of a graphene structure according to example embodiments; [0021]
FIGS. 2A through 2D are perspective views showing an example method of forming the graphene structure of
FIGS. 3A through 3D are perspective views showing another method of forming the graphene structure of
FIG. 4 is a schematic cross-sectional view of a graphene structure according to example embodiments; [0025]
FIG. 5 is a schematic cross-sectional view of a modified version of the graphene structure of
FIG. 6 is a schematic cross-sectional view of another modified version of the graphene structure of
FIG. 7 is a schematic cross-sectional view of another modified version of the graphene structure of
FIGS. 8A through 8E are cross-sectional views showing an example method of forming the graphene structure of
FIGS. 9A through 9E are cross-sectional views showing an example method of forming the graphene structure of
FIG. 10 is a schematic cross-sectional view of a graphene structure according to example embodiments; [0031]
FIGS. 11 A through 11 D are cross-sectional views showing an example method of forming the graphene structure of
FIG. 12 is a perspective view of a graphene structure according to example embodiments; [0033]
FIG. 13 is a schematic cutaway perspective view of a graphene structure according to example embodiments; [0034]
FIG. 14 is a perspective view of a graphene structure according to example embodiments; and [0035]
FIGS. 15A through 15D are cross-sectional views showing an example method of forming the graphene structure of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-5.. canceled
canceled
canceled
canceled
canceled
A graphene structure comprising: a first supporting layer; a first graphene on the first supporting layer; a second supporting layer on the first graphene; and a second graphene on the second supporting layer, wherein the first and second supporting layers are fo r med of Ge or include a Ge coating on upper surfaces thereof, and wherein the first supporting layer, the first graphene, the second supporting layer, and the second graphene are stacked.
The graphene structure of claim 6, wherein at least one of the first graphene and the second graphene is patterned.
The graphene structure of claim 6, further comprising: a third supporting layer on the second graphene; and a third graphene on the third supporting layer to form a multi-layer graphene structure.
. canceled
11-14.. canceled
canceled
canceled
canceled
(Withdrawn-Currently Amended) A method of forming a graphene structure, the method comprising: placing a three dimensional D) template in a reaction chamber, the 3D template including a first Ge layer on an upper surface of the 3D template; and Page 2 Application No.: 13/229,183 Attorney Docket No.: 2557S I-00 1620-US SVG 13229183.07-22-2015.ICONKFV₈PXXIFW4.CLM.2.1.175.97.315.118.svg 0.07 0.467 Chemistry Black and white SVG 13229183.07-22-2015.ICONKFV₈PXXIFW4.CLM.2.1.625.74.777.108.svg 0.113 0.507 Chemistry Black and white growing a first graphene along at least a portion of an outer circumference of SVG 13229183.07-22-2015.ICONKFV₈PXXIFW4.CLM.2.4.259.426.1359.1389.svg 3.21 3.667 Chemistry Black and white raphene; and nd Ge layer, aphene, the second Ge layer, and the e is any one of a polygonal column, a on=Ge--materia,-and-a first Ge layer-is
The method of claim 15, wherein the first Ge layer is removed after for m ing the first graphene. withdrawn
The method of claim 15, wherein the first Ge layer is for m ed according to a pattern and the first graphene is grown along the pattern of the first Ge layer. withdrawn
. canceled
(Withdrawn-Currently Amended) The method of claim 18 15, wherein forming the second Ge layer on the first graphene comprises: forming a non-Ge layer on the first graphene using a non-Ge material; and forming a second Ge layer on the non-Ge layer.
(Withdrawn-Currently Amended) The method of claim 1815, further comprising: for midn g a multi-layer graphene by repeatedly stacking another Ge layer and another graphene on the second graphene.
The method of claim 20, further comprising: Page 3 Application No.: 13/229,183 Attorney Docket No.: 2557S I -001620-US SVG 13229183.07-22-2015.ICONKFV₈PXXIFW4.CLM.3.1.181.103.319.124.svg 0.07 0.46 Chemistry Black and white SVG 13229183.07-22-2015.ICONKFV₈PXXIFW4.CLM.3.1.630.81.780.115.svg 0.113 0.50 Chemistry Black and white forem ing a plurality of holes in the multi-layer graphene; and filling the plurality of holes with a functional material. withdrawn
(Withdrawn-Curren t ly Amended) The method of claim 1815, further comprising: etching the first graphene and the second graphene according to a pattern.
The method of claim 22, wherein edges of the first graphene and the second graphene exposed by etching are hydrogen-ter mi nated or treated with functional groups. withdrawn
The method of claim 22, further comprising: forming a third graphene on side surfaces of the first graphene and the second graphene exposed by etching. withdrawn
(Withdrawn-Currently Amended) The method of claim 1215, wherein the first graphene is at least one of a one-atom layer, two-atom layers and three-atom layers. *** END CLAIM LISTING *** Page 4
Layer stacks claimed or described, ordered top of device to substrate.
stacked graphene structure
multi-layer graphene structure
Materials described outside the worked examples.
graphene
germanium
Ge
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 100–1000000 nm | — |
Pressure | 0.1–760 torr |
Related documents with shared materials, methods, properties, or citations.
carbon containing gas
| — |
Duration | 10–60 minutes | — |
Pressure | 1–300 torr | — |
GRAPHENE NANORIBBONS, GRAPHENE NANOPLATELETS AND MIXTURES THEREOF AND METHODS OF SYNTHESIS
carbon containing gas
| — |
Duration | 10–60 minutes | — |
Pressure | 1–300 torr | — |
GRAPHENE NANORIBBONS, GRAPHENE NANOPLATELETS AND MIXTURES THEREOF AND METHODS OF SYNTHESIS
carbon containing gas
| — |
Duration | 10–60 minutes | — |
Pressure | 1–300 torr | — |
GRAPHENE NANORIBBONS, GRAPHENE NANOPLATELETS AND MIXTURES THEREOF AND METHODS OF SYNTHESIS
carbon containing gas
| — |
Duration | 10–60 minutes | — |
Pressure | 1–300 torr | — |
GRAPHENE NANORIBBONS, GRAPHENE NANOPLATELETS AND MIXTURES THEREOF AND METHODS OF SYNTHESIS