Patent
US 9,133,545lithium aluminosilicate glass-ceramic
elemental metal (Ni, Co, Cu, Pt, Au, Rd, Ru, Ir, Fe)
carbon precursor
graphene
bilayer graphene
lithium aluminosilicate (LAS) glass-ceramic
nickel oxide
NiO
cobalt oxide
Co₃O₄
acetylene
C₂H₂
methane
CH₄
hydrogen
H₂
| ≥ 800 °C |
| — |
Temperature | ≥ 900 °C | — |
SEMICONDUCTOR DEVICE INCLUDING CATALYST LAYER AND GRAPHENE LAYER THEREON AND METHOD FOR MANUFACTURING THE SAME
lithium aluminosilicate glass-ceramic
elemental metal (Ni, Co, Cu, Pt, Au, Rd, Ru, Ir, Fe)
carbon precursor
graphene
bilayer graphene
lithium aluminosilicate (LAS) glass-ceramic
nickel oxide
NiO
cobalt oxide
Co₃O₄
acetylene
C₂H₂
methane
CH₄
hydrogen
H₂
| ≥ 800 °C |
| — |
Temperature | ≥ 900 °C | — |
SEMICONDUCTOR DEVICE INCLUDING CATALYST LAYER AND GRAPHENE LAYER THEREON AND METHOD FOR MANUFACTURING THE SAME
lithium aluminosilicate glass-ceramic
elemental metal (Ni, Co, Cu, Pt, Au, Rd, Ru, Ir, Fe)
carbon precursor
graphene
bilayer graphene
lithium aluminosilicate (LAS) glass-ceramic
nickel oxide
NiO
cobalt oxide
Co₃O₄
acetylene
C₂H₂
methane
CH₄
hydrogen
H₂
| ≥ 800 °C |
| — |
Temperature | ≥ 900 °C | — |
SEMICONDUCTOR DEVICE INCLUDING CATALYST LAYER AND GRAPHENE LAYER THEREON AND METHOD FOR MANUFACTURING THE SAME
lithium aluminosilicate glass-ceramic
elemental metal (Ni, Co, Cu, Pt, Au, Rd, Ru, Ir, Fe)
carbon precursor
graphene
bilayer graphene
lithium aluminosilicate (LAS) glass-ceramic
nickel oxide
NiO
cobalt oxide
Co₃O₄
acetylene
C₂H₂
methane
CH₄
hydrogen
H₂
| ≥ 800 °C |
| — |
Temperature | ≥ 900 °C | — |
SEMICONDUCTOR DEVICE INCLUDING CATALYST LAYER AND GRAPHENE LAYER THEREON AND METHOD FOR MANUFACTURING THE SAME