Patent
US 11,091,836GRAPHENE STRUCTURE FORMING METHOD AND GRAPHENE STRUCTURE FORMING APPARATUS
Ryota IFUKU
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,091,836Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flow chart showing a graphene structure forming method according to a first embodiment. [0018]
FIGS. 2A to 2C are sectional views showing a specific example of a structure of a target substrate in the graphene structure forming method according to the …
FIG. 3 is a sectional view showing a state in which a graphene structure is formed on a target substrate by the graphene structure forming method according to …
FIG. 4 is a flowchart showing a graphene structure forming method according to a second embodiment. [0021]
FIG. 5 is a sectional view showing a state in which a graphene structure including CNW is formed on a target substrate by the graphene structure forming method …
FIG. 6 is a sectional view showing a first example of a processing apparatus suitable for carrying out the graphene structure forming methods according to the …
FIG. 7. [0025] FI G. 9 is a sectional view schematically showing a microwave radiation mechanism in the processing apparatus of FI G. 7. [0026] FI G. 10 is a …
FIG. 8 is a configuration diagram showing a configuration of a microwave introduction device of the processing apparatus of
FIG. 9 is a sectional view schematically showing a microwave radiation mechanism in the processing apparatus of
FIG. 10 is a bottom view schematically showing a ceiling wall portion of a processing container in the processing apparatus of
FIG. 11. As shown in this SEM photograph, it was confirmed that a graphene structure having graphene and CNW grows on the wafer whose surface is made of an …
FIG. 12. As shown in
FIG. 13. As shown in
FIGS. 14A to 14D, it can be noted that graphene and CNW grow as a graphene structure and further that CNW is composed of plural layers of graphene sheets. In …
FIGS. 15 A to 15D, it can be noted that graphene grows on the wafer and CNW grows by branching from the graphene. (Example 4) [0129] In this example, the …
FIG. 16B is a TEM photograph of the CNW contained in the graphene structure, which shows that the CNW is composed of a plurality of graphene sheets.
FIG. 17C is the Raman spectrum of the graphene structure, from which a graphene-derived Raman signal was confirmed. [0132] From the above, it was also confirmed …
FIG. 18. As shown in this SEM photograph, it was confirmed that a graphene structure including graphene and CNW grows on the Si wafer as a semiconductor without …
FIG. 19. As shown in this SEM photograph, it was confirmed that a graphene structure including graphene and CNW grows on the wafer having a metal surface …
FIGS. 20A to 20D, it was confirmed that when the pressure is in the range of 20 mTorr to 5 Torr, the graphene structure can grow even though the density and …
FIG. 21. In this example, as a target substrate, a wafer (without a metal catalyst layer) having a SiO 2 film formed on a Si base was prepared. Other conditions …
FIG. 22. As shown in this SEM photograph, it was confirmed that a graphene structure including graphene and CNW grows on a Si wafer as a semiconductor without …
FIG. 23. As shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene structure forming method comprising: preparing a target substrate; and forming a graphene structure on a surface of the target substrate by remote microwave plasma chemical vapor deposition (CVD) using a carbon-containing gas as a film-forming raw material gas in a state in which the surface of the target substrate has no catalytic function, wherein the forming the graphene structure includes: disposing the target substrate in a region spaced apart from a plasma generation region where the remote microwave plasma is generated; generating the remote microwave plasma in the plasma generation region; supplying the carbon-containing gas to a predetermined position between the plasma generation region and the target substrate such that the carbon-containing gas is dissociated by the remote microwave plasma; and supplying the dissociated carbon-containing gas to the target substrate, wherein the forming the graphene structure is performed by a processing apparatus, the processing apparatus including: a processing container configured to accommodate the target substrate; a mounting table configured to horizontally mount the target substrate inside the processing container; a heating mechanism configured to heat the target substrate; a microwave introduction device provided on the processing container; a gas supply mechanism con fi gured to supply a gas including the carbon-containing gas as the fi lm-forming raw material gas into the processing container; and an exhaust mechanism con fi gured to exhaust an interior of the processing container, wherein the microwave introduction device includes a microwave generator con fi gured to generate microwaves, and a plurality of microwave radiation mechanisms supplied with the microwaves distributed from the microwave generator and con fi gured to radiate the microwaves into the processing container, wherein each of the microwave radiation mechanisms includes a tuner con fi gured to perform impedance matching, a planar slot antenna having slots con fi gured to radiate the microwaves, and a microwave transmitting plate that is provided just below the planar slot antenna, fi tted to a ceiling wall of the processing container and made of a dielectric material, wherein the gas supply mechanism supplies a rare gas as a plasma generation g as to the plasma generation region just below the ceiling wall of the processing container, and supplies the carbon-containing gas as the film-forming raw material gas from nozzles, which are fit into openings formed in the ceiling wall and extend downward from the ceiling wall, to the predetermined position between the ceiling wall and the target substrate on the mounting table, [[and]] wherein the carbon-containing gas is a gas selected from a group consisting of ethylene (C 2 H 4), methane (CH 4), ethane (C 2 H 6), propane (C 3 H s), propylene (C 3 H 6), acetylene (C 2 H 2), methanol (CH 3 0 H), and ethanol (C 2 H 5 O H), and wherein the forming the graphene structure is performed under a pressure in a range of 100 mTo rr to 5 Torr such that no carbon nanowall grows. Currently amended
The method of Claim 1, wherein the surface of the target substrate is an insulator or a semiconductor. Original
The method of Claim 1, wherein the surface of the target substrate is a metal. Previously presented
The method of Claim 1, wherein the forming the graphene structure is performed under a temperature of the target substrate in a range of 350 to 1000 degrees C, a microwave power in a range of 100 to 5000 W and a time in a range of 1 to 200 min. Original
(Cu rr ently amended) The method of Claim 1, wherein the graphene structure is composed of only graphene formed parallel to the target substrate. Currently amended
A graphene structure forming apparatus for forming a graphene structure, comprising: a processing container configured to accommodate the target substrate; a mounting table configured to horizontally mount the target substrate inside the processing container; a heating mechanism configured to heat the target substrate; a microwave introduction device provided on the processing container; a gas supply mechanism con fi gured to supply a gas including a carbon-containing gas as a film-forming raw material gas into the processing container; an exhaust mechanism con fi gured to exhaust an interior of the processing container; and a controller configured to control the heating mechanism, the microwave introduction device, the gas supply mechanism and the exhaust mechanism, wherein the microwave introduction device includes a microwave generator con fi gured to generate a microwave, and a plurality of microwave radiation mechanisms supplied with the microwave distributed from the microwave generator and con fi gured to radiate the microwave into the processing container, each of the microwave radiation mechanisms includes a tuner con fi gured to perform impedance matching, a planar slot antenna having slots con fi gured to radiate the microwave, and a microwave transmitting plate that is provided just below the planar slot antenna, fitted to a ceiling wall of the processing container and made of a dielectric material, and the controller controls the heating mechanism, the microwave introduction device, the gas supply mechanism and the exhaust mechanism so that the graphene structure forming method of Claim 1 is performed. Withdrawn
Canceled
Canceled
A graphene structure forming method comprising: preparing a target substrate; and forming a graphene structure n a surface of the target substrate by remote microwave plasma chemical vapor deposition (CVD) using a carbon-containing gas as a film-forming raw material gas, wherein the forming the graphene structure includes: disposing the target substrate in a region spaced apart from a plasma generation region where the remote microwave plasma is generated; generating the remote microwave plasma in the plasma generation region; supplying the carbon-containing gas to a predetermined position between the plasma generation region and the target substrate such that the carbon-containing gas is dissociated by the remote microwave plasma; and supplying the dissociated [[the]] carbon-containing gas to the target substrate, wherein the forming the graphene structure is performed by a processing apparatus, the processing apparatus including: a processing container con fi gured to accommodate the target substrate; a mounting table con fi gured to horizontally mount the target substrate inside the processing container; a heating mechanism configured to heat the target substrate; a microwave introduction device provided on the processing container; a gas supply mechanism configured to supply a gas including the carbon- containing gas as the film-forming raw material gas into the processing container; and an exhaust mechanism con fi gured to exhaust an interior of the processing container, wherein the microwave introduction device includes a microwave generator con fi gured to generate microwaves, and a plurality of microwave radiation mechanisms supplied with the microwaves distributed from the microwave generator and configured to radiate the microwaves into the processing container, wherein each of the microwave radiation mechanisms includes a tuner con fi gured to perform impedance matching, a planar slot antenna having slots con fi gured to radiate the microwaves, and a microwave transmitting plate that is provided just below the planar slot antenna, fi tted to a ceiling wall of the processing container and made of a dielectric material, wherein the gas supply mechanism supplies a rare gas as a plasma generation gas to the plasma generation region just below the ceiling wall of the processing container, and supplies the carbon-containing gas as the fi lm-forming raw material gas from nozzles, which are fit into openings formed in the ceiling wall and extend downward from the ceiling wall, to the predetermined position between the ceiling wall and the target substrate on the mounting table, [[and]] wherein the carbon-containing gas is a gas selected from a group consisting of ethylene (C 2 H 4), methane (CH 4), ethane (C 2 H 6), propane (C 3 H s), propylene (C 3 H 6), acetylene (C 2 H 2), methanol (CH 3 0 H), and ethanol (C 2 H 5 OH)), and wherein the forming the graphene structure is performed under a pressure in a range of 100 mTo rr to 5 Torr such that no carbon nanowall grows. Currently amended
The method of Claim 8, wherein the surface of the target substrate is an insulator, a semiconductor or a metal. Original
The method of Claim 8, wherein the forming the graphene structure is performed under a temperature of the target substrate in a range of 350 to 1000 degrees C, a microwave power in a range of 100 to 5000 W and a time in a range of 1 to 200 min. Original
Canceled
12-16. Canceled
Canceled
18-19. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
remote microwave plasma CVD processing apparatus
Materials described outside the worked examples.
ethylene
C₂H₄
methane
CH₄
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7. [0025] FI G. 9 is a sectional view schematically showing a microwave radiation mechanism in the processing apparatus of FI G. 7. [0026] FI G. 10 is a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.02–5 Torr | — |
— |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,091,836Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flow chart showing a graphene structure forming method according to a first embodiment. [0018]
FIGS. 2A to 2C are sectional views showing a specific example of a structure of a target substrate in the graphene structure forming method according to the …
FIG. 3 is a sectional view showing a state in which a graphene structure is formed on a target substrate by the graphene structure forming method according to …
FIG. 4 is a flowchart showing a graphene structure forming method according to a second embodiment. [0021]
FIG. 5 is a sectional view showing a state in which a graphene structure including CNW is formed on a target substrate by the graphene structure forming method …
FIG. 6 is a sectional view showing a first example of a processing apparatus suitable for carrying out the graphene structure forming methods according to the …
FIG. 7. [0025] FI G. 9 is a sectional view schematically showing a microwave radiation mechanism in the processing apparatus of FI G. 7. [0026] FI G. 10 is a …
FIG. 8 is a configuration diagram showing a configuration of a microwave introduction device of the processing apparatus of
FIG. 9 is a sectional view schematically showing a microwave radiation mechanism in the processing apparatus of
FIG. 10 is a bottom view schematically showing a ceiling wall portion of a processing container in the processing apparatus of
FIG. 11. As shown in this SEM photograph, it was confirmed that a graphene structure having graphene and CNW grows on the wafer whose surface is made of an …
FIG. 12. As shown in
FIG. 13. As shown in
FIGS. 14A to 14D, it can be noted that graphene and CNW grow as a graphene structure and further that CNW is composed of plural layers of graphene sheets. In …
FIGS. 15 A to 15D, it can be noted that graphene grows on the wafer and CNW grows by branching from the graphene. (Example 4) [0129] In this example, the …
FIG. 16B is a TEM photograph of the CNW contained in the graphene structure, which shows that the CNW is composed of a plurality of graphene sheets.
FIG. 17C is the Raman spectrum of the graphene structure, from which a graphene-derived Raman signal was confirmed. [0132] From the above, it was also confirmed …
FIG. 18. As shown in this SEM photograph, it was confirmed that a graphene structure including graphene and CNW grows on the Si wafer as a semiconductor without …
FIG. 19. As shown in this SEM photograph, it was confirmed that a graphene structure including graphene and CNW grows on the wafer having a metal surface …
FIGS. 20A to 20D, it was confirmed that when the pressure is in the range of 20 mTorr to 5 Torr, the graphene structure can grow even though the density and …
FIG. 21. In this example, as a target substrate, a wafer (without a metal catalyst layer) having a SiO 2 film formed on a Si base was prepared. Other conditions …
FIG. 22. As shown in this SEM photograph, it was confirmed that a graphene structure including graphene and CNW grows on a Si wafer as a semiconductor without …
FIG. 23. As shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene structure forming method comprising: preparing a target substrate; and forming a graphene structure on a surface of the target substrate by remote microwave plasma chemical vapor deposition (CVD) using a carbon-containing gas as a film-forming raw material gas in a state in which the surface of the target substrate has no catalytic function, wherein the forming the graphene structure includes: disposing the target substrate in a region spaced apart from a plasma generation region where the remote microwave plasma is generated; generating the remote microwave plasma in the plasma generation region; supplying the carbon-containing gas to a predetermined position between the plasma generation region and the target substrate such that the carbon-containing gas is dissociated by the remote microwave plasma; and supplying the dissociated carbon-containing gas to the target substrate, wherein the forming the graphene structure is performed by a processing apparatus, the processing apparatus including: a processing container configured to accommodate the target substrate; a mounting table configured to horizontally mount the target substrate inside the processing container; a heating mechanism configured to heat the target substrate; a microwave introduction device provided on the processing container; a gas supply mechanism con fi gured to supply a gas including the carbon-containing gas as the fi lm-forming raw material gas into the processing container; and an exhaust mechanism con fi gured to exhaust an interior of the processing container, wherein the microwave introduction device includes a microwave generator con fi gured to generate microwaves, and a plurality of microwave radiation mechanisms supplied with the microwaves distributed from the microwave generator and con fi gured to radiate the microwaves into the processing container, wherein each of the microwave radiation mechanisms includes a tuner con fi gured to perform impedance matching, a planar slot antenna having slots con fi gured to radiate the microwaves, and a microwave transmitting plate that is provided just below the planar slot antenna, fi tted to a ceiling wall of the processing container and made of a dielectric material, wherein the gas supply mechanism supplies a rare gas as a plasma generation g as to the plasma generation region just below the ceiling wall of the processing container, and supplies the carbon-containing gas as the film-forming raw material gas from nozzles, which are fit into openings formed in the ceiling wall and extend downward from the ceiling wall, to the predetermined position between the ceiling wall and the target substrate on the mounting table, [[and]] wherein the carbon-containing gas is a gas selected from a group consisting of ethylene (C 2 H 4), methane (CH 4), ethane (C 2 H 6), propane (C 3 H s), propylene (C 3 H 6), acetylene (C 2 H 2), methanol (CH 3 0 H), and ethanol (C 2 H 5 O H), and wherein the forming the graphene structure is performed under a pressure in a range of 100 mTo rr to 5 Torr such that no carbon nanowall grows. Currently amended
The method of Claim 1, wherein the surface of the target substrate is an insulator or a semiconductor. Original
The method of Claim 1, wherein the surface of the target substrate is a metal. Previously presented
The method of Claim 1, wherein the forming the graphene structure is performed under a temperature of the target substrate in a range of 350 to 1000 degrees C, a microwave power in a range of 100 to 5000 W and a time in a range of 1 to 200 min. Original
(Cu rr ently amended) The method of Claim 1, wherein the graphene structure is composed of only graphene formed parallel to the target substrate. Currently amended
A graphene structure forming apparatus for forming a graphene structure, comprising: a processing container configured to accommodate the target substrate; a mounting table configured to horizontally mount the target substrate inside the processing container; a heating mechanism configured to heat the target substrate; a microwave introduction device provided on the processing container; a gas supply mechanism con fi gured to supply a gas including a carbon-containing gas as a film-forming raw material gas into the processing container; an exhaust mechanism con fi gured to exhaust an interior of the processing container; and a controller configured to control the heating mechanism, the microwave introduction device, the gas supply mechanism and the exhaust mechanism, wherein the microwave introduction device includes a microwave generator con fi gured to generate a microwave, and a plurality of microwave radiation mechanisms supplied with the microwave distributed from the microwave generator and con fi gured to radiate the microwave into the processing container, each of the microwave radiation mechanisms includes a tuner con fi gured to perform impedance matching, a planar slot antenna having slots con fi gured to radiate the microwave, and a microwave transmitting plate that is provided just below the planar slot antenna, fitted to a ceiling wall of the processing container and made of a dielectric material, and the controller controls the heating mechanism, the microwave introduction device, the gas supply mechanism and the exhaust mechanism so that the graphene structure forming method of Claim 1 is performed. Withdrawn
Canceled
Canceled
A graphene structure forming method comprising: preparing a target substrate; and forming a graphene structure n a surface of the target substrate by remote microwave plasma chemical vapor deposition (CVD) using a carbon-containing gas as a film-forming raw material gas, wherein the forming the graphene structure includes: disposing the target substrate in a region spaced apart from a plasma generation region where the remote microwave plasma is generated; generating the remote microwave plasma in the plasma generation region; supplying the carbon-containing gas to a predetermined position between the plasma generation region and the target substrate such that the carbon-containing gas is dissociated by the remote microwave plasma; and supplying the dissociated [[the]] carbon-containing gas to the target substrate, wherein the forming the graphene structure is performed by a processing apparatus, the processing apparatus including: a processing container con fi gured to accommodate the target substrate; a mounting table con fi gured to horizontally mount the target substrate inside the processing container; a heating mechanism configured to heat the target substrate; a microwave introduction device provided on the processing container; a gas supply mechanism configured to supply a gas including the carbon- containing gas as the film-forming raw material gas into the processing container; and an exhaust mechanism con fi gured to exhaust an interior of the processing container, wherein the microwave introduction device includes a microwave generator con fi gured to generate microwaves, and a plurality of microwave radiation mechanisms supplied with the microwaves distributed from the microwave generator and configured to radiate the microwaves into the processing container, wherein each of the microwave radiation mechanisms includes a tuner con fi gured to perform impedance matching, a planar slot antenna having slots con fi gured to radiate the microwaves, and a microwave transmitting plate that is provided just below the planar slot antenna, fi tted to a ceiling wall of the processing container and made of a dielectric material, wherein the gas supply mechanism supplies a rare gas as a plasma generation gas to the plasma generation region just below the ceiling wall of the processing container, and supplies the carbon-containing gas as the fi lm-forming raw material gas from nozzles, which are fit into openings formed in the ceiling wall and extend downward from the ceiling wall, to the predetermined position between the ceiling wall and the target substrate on the mounting table, [[and]] wherein the carbon-containing gas is a gas selected from a group consisting of ethylene (C 2 H 4), methane (CH 4), ethane (C 2 H 6), propane (C 3 H s), propylene (C 3 H 6), acetylene (C 2 H 2), methanol (CH 3 0 H), and ethanol (C 2 H 5 OH)), and wherein the forming the graphene structure is performed under a pressure in a range of 100 mTo rr to 5 Torr such that no carbon nanowall grows. Currently amended
The method of Claim 8, wherein the surface of the target substrate is an insulator, a semiconductor or a metal. Original
The method of Claim 8, wherein the forming the graphene structure is performed under a temperature of the target substrate in a range of 350 to 1000 degrees C, a microwave power in a range of 100 to 5000 W and a time in a range of 1 to 200 min. Original
Canceled
12-16. Canceled
Canceled
18-19. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
remote microwave plasma CVD processing apparatus
Materials described outside the worked examples.
ethylene
C₂H₄
methane
CH₄
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7. [0025] FI G. 9 is a sectional view schematically showing a microwave radiation mechanism in the processing apparatus of FI G. 7. [0026] FI G. 10 is a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.02–5 Torr | — |
— |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,091,836Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flow chart showing a graphene structure forming method according to a first embodiment. [0018]
FIGS. 2A to 2C are sectional views showing a specific example of a structure of a target substrate in the graphene structure forming method according to the …
FIG. 3 is a sectional view showing a state in which a graphene structure is formed on a target substrate by the graphene structure forming method according to …
FIG. 4 is a flowchart showing a graphene structure forming method according to a second embodiment. [0021]
FIG. 5 is a sectional view showing a state in which a graphene structure including CNW is formed on a target substrate by the graphene structure forming method …
FIG. 6 is a sectional view showing a first example of a processing apparatus suitable for carrying out the graphene structure forming methods according to the …
FIG. 7. [0025] FI G. 9 is a sectional view schematically showing a microwave radiation mechanism in the processing apparatus of FI G. 7. [0026] FI G. 10 is a …
FIG. 8 is a configuration diagram showing a configuration of a microwave introduction device of the processing apparatus of
FIG. 9 is a sectional view schematically showing a microwave radiation mechanism in the processing apparatus of
FIG. 10 is a bottom view schematically showing a ceiling wall portion of a processing container in the processing apparatus of
FIG. 11. As shown in this SEM photograph, it was confirmed that a graphene structure having graphene and CNW grows on the wafer whose surface is made of an …
FIG. 12. As shown in
FIG. 13. As shown in
FIGS. 14A to 14D, it can be noted that graphene and CNW grow as a graphene structure and further that CNW is composed of plural layers of graphene sheets. In …
FIGS. 15 A to 15D, it can be noted that graphene grows on the wafer and CNW grows by branching from the graphene. (Example 4) [0129] In this example, the …
FIG. 16B is a TEM photograph of the CNW contained in the graphene structure, which shows that the CNW is composed of a plurality of graphene sheets.
FIG. 17C is the Raman spectrum of the graphene structure, from which a graphene-derived Raman signal was confirmed. [0132] From the above, it was also confirmed …
FIG. 18. As shown in this SEM photograph, it was confirmed that a graphene structure including graphene and CNW grows on the Si wafer as a semiconductor without …
FIG. 19. As shown in this SEM photograph, it was confirmed that a graphene structure including graphene and CNW grows on the wafer having a metal surface …
FIGS. 20A to 20D, it was confirmed that when the pressure is in the range of 20 mTorr to 5 Torr, the graphene structure can grow even though the density and …
FIG. 21. In this example, as a target substrate, a wafer (without a metal catalyst layer) having a SiO 2 film formed on a Si base was prepared. Other conditions …
FIG. 22. As shown in this SEM photograph, it was confirmed that a graphene structure including graphene and CNW grows on a Si wafer as a semiconductor without …
FIG. 23. As shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene structure forming method comprising: preparing a target substrate; and forming a graphene structure on a surface of the target substrate by remote microwave plasma chemical vapor deposition (CVD) using a carbon-containing gas as a film-forming raw material gas in a state in which the surface of the target substrate has no catalytic function, wherein the forming the graphene structure includes: disposing the target substrate in a region spaced apart from a plasma generation region where the remote microwave plasma is generated; generating the remote microwave plasma in the plasma generation region; supplying the carbon-containing gas to a predetermined position between the plasma generation region and the target substrate such that the carbon-containing gas is dissociated by the remote microwave plasma; and supplying the dissociated carbon-containing gas to the target substrate, wherein the forming the graphene structure is performed by a processing apparatus, the processing apparatus including: a processing container configured to accommodate the target substrate; a mounting table configured to horizontally mount the target substrate inside the processing container; a heating mechanism configured to heat the target substrate; a microwave introduction device provided on the processing container; a gas supply mechanism con fi gured to supply a gas including the carbon-containing gas as the fi lm-forming raw material gas into the processing container; and an exhaust mechanism con fi gured to exhaust an interior of the processing container, wherein the microwave introduction device includes a microwave generator con fi gured to generate microwaves, and a plurality of microwave radiation mechanisms supplied with the microwaves distributed from the microwave generator and con fi gured to radiate the microwaves into the processing container, wherein each of the microwave radiation mechanisms includes a tuner con fi gured to perform impedance matching, a planar slot antenna having slots con fi gured to radiate the microwaves, and a microwave transmitting plate that is provided just below the planar slot antenna, fi tted to a ceiling wall of the processing container and made of a dielectric material, wherein the gas supply mechanism supplies a rare gas as a plasma generation g as to the plasma generation region just below the ceiling wall of the processing container, and supplies the carbon-containing gas as the film-forming raw material gas from nozzles, which are fit into openings formed in the ceiling wall and extend downward from the ceiling wall, to the predetermined position between the ceiling wall and the target substrate on the mounting table, [[and]] wherein the carbon-containing gas is a gas selected from a group consisting of ethylene (C 2 H 4), methane (CH 4), ethane (C 2 H 6), propane (C 3 H s), propylene (C 3 H 6), acetylene (C 2 H 2), methanol (CH 3 0 H), and ethanol (C 2 H 5 O H), and wherein the forming the graphene structure is performed under a pressure in a range of 100 mTo rr to 5 Torr such that no carbon nanowall grows. Currently amended
The method of Claim 1, wherein the surface of the target substrate is an insulator or a semiconductor. Original
The method of Claim 1, wherein the surface of the target substrate is a metal. Previously presented
The method of Claim 1, wherein the forming the graphene structure is performed under a temperature of the target substrate in a range of 350 to 1000 degrees C, a microwave power in a range of 100 to 5000 W and a time in a range of 1 to 200 min. Original
(Cu rr ently amended) The method of Claim 1, wherein the graphene structure is composed of only graphene formed parallel to the target substrate. Currently amended
A graphene structure forming apparatus for forming a graphene structure, comprising: a processing container configured to accommodate the target substrate; a mounting table configured to horizontally mount the target substrate inside the processing container; a heating mechanism configured to heat the target substrate; a microwave introduction device provided on the processing container; a gas supply mechanism con fi gured to supply a gas including a carbon-containing gas as a film-forming raw material gas into the processing container; an exhaust mechanism con fi gured to exhaust an interior of the processing container; and a controller configured to control the heating mechanism, the microwave introduction device, the gas supply mechanism and the exhaust mechanism, wherein the microwave introduction device includes a microwave generator con fi gured to generate a microwave, and a plurality of microwave radiation mechanisms supplied with the microwave distributed from the microwave generator and con fi gured to radiate the microwave into the processing container, each of the microwave radiation mechanisms includes a tuner con fi gured to perform impedance matching, a planar slot antenna having slots con fi gured to radiate the microwave, and a microwave transmitting plate that is provided just below the planar slot antenna, fitted to a ceiling wall of the processing container and made of a dielectric material, and the controller controls the heating mechanism, the microwave introduction device, the gas supply mechanism and the exhaust mechanism so that the graphene structure forming method of Claim 1 is performed. Withdrawn
Canceled
Canceled
A graphene structure forming method comprising: preparing a target substrate; and forming a graphene structure n a surface of the target substrate by remote microwave plasma chemical vapor deposition (CVD) using a carbon-containing gas as a film-forming raw material gas, wherein the forming the graphene structure includes: disposing the target substrate in a region spaced apart from a plasma generation region where the remote microwave plasma is generated; generating the remote microwave plasma in the plasma generation region; supplying the carbon-containing gas to a predetermined position between the plasma generation region and the target substrate such that the carbon-containing gas is dissociated by the remote microwave plasma; and supplying the dissociated [[the]] carbon-containing gas to the target substrate, wherein the forming the graphene structure is performed by a processing apparatus, the processing apparatus including: a processing container con fi gured to accommodate the target substrate; a mounting table con fi gured to horizontally mount the target substrate inside the processing container; a heating mechanism configured to heat the target substrate; a microwave introduction device provided on the processing container; a gas supply mechanism configured to supply a gas including the carbon- containing gas as the film-forming raw material gas into the processing container; and an exhaust mechanism con fi gured to exhaust an interior of the processing container, wherein the microwave introduction device includes a microwave generator con fi gured to generate microwaves, and a plurality of microwave radiation mechanisms supplied with the microwaves distributed from the microwave generator and configured to radiate the microwaves into the processing container, wherein each of the microwave radiation mechanisms includes a tuner con fi gured to perform impedance matching, a planar slot antenna having slots con fi gured to radiate the microwaves, and a microwave transmitting plate that is provided just below the planar slot antenna, fi tted to a ceiling wall of the processing container and made of a dielectric material, wherein the gas supply mechanism supplies a rare gas as a plasma generation gas to the plasma generation region just below the ceiling wall of the processing container, and supplies the carbon-containing gas as the fi lm-forming raw material gas from nozzles, which are fit into openings formed in the ceiling wall and extend downward from the ceiling wall, to the predetermined position between the ceiling wall and the target substrate on the mounting table, [[and]] wherein the carbon-containing gas is a gas selected from a group consisting of ethylene (C 2 H 4), methane (CH 4), ethane (C 2 H 6), propane (C 3 H s), propylene (C 3 H 6), acetylene (C 2 H 2), methanol (CH 3 0 H), and ethanol (C 2 H 5 OH)), and wherein the forming the graphene structure is performed under a pressure in a range of 100 mTo rr to 5 Torr such that no carbon nanowall grows. Currently amended
The method of Claim 8, wherein the surface of the target substrate is an insulator, a semiconductor or a metal. Original
The method of Claim 8, wherein the forming the graphene structure is performed under a temperature of the target substrate in a range of 350 to 1000 degrees C, a microwave power in a range of 100 to 5000 W and a time in a range of 1 to 200 min. Original
Canceled
12-16. Canceled
Canceled
18-19. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
remote microwave plasma CVD processing apparatus
Materials described outside the worked examples.
ethylene
C₂H₄
methane
CH₄
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7. [0025] FI G. 9 is a sectional view schematically showing a microwave radiation mechanism in the processing apparatus of FI G. 7. [0026] FI G. 10 is a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.02–5 Torr | — |
— |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,091,836Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flow chart showing a graphene structure forming method according to a first embodiment. [0018]
FIGS. 2A to 2C are sectional views showing a specific example of a structure of a target substrate in the graphene structure forming method according to the …
FIG. 3 is a sectional view showing a state in which a graphene structure is formed on a target substrate by the graphene structure forming method according to …
FIG. 4 is a flowchart showing a graphene structure forming method according to a second embodiment. [0021]
FIG. 5 is a sectional view showing a state in which a graphene structure including CNW is formed on a target substrate by the graphene structure forming method …
FIG. 6 is a sectional view showing a first example of a processing apparatus suitable for carrying out the graphene structure forming methods according to the …
FIG. 7. [0025] FI G. 9 is a sectional view schematically showing a microwave radiation mechanism in the processing apparatus of FI G. 7. [0026] FI G. 10 is a …
FIG. 8 is a configuration diagram showing a configuration of a microwave introduction device of the processing apparatus of
FIG. 9 is a sectional view schematically showing a microwave radiation mechanism in the processing apparatus of
FIG. 10 is a bottom view schematically showing a ceiling wall portion of a processing container in the processing apparatus of
FIG. 11. As shown in this SEM photograph, it was confirmed that a graphene structure having graphene and CNW grows on the wafer whose surface is made of an …
FIG. 12. As shown in
FIG. 13. As shown in
FIGS. 14A to 14D, it can be noted that graphene and CNW grow as a graphene structure and further that CNW is composed of plural layers of graphene sheets. In …
FIGS. 15 A to 15D, it can be noted that graphene grows on the wafer and CNW grows by branching from the graphene. (Example 4) [0129] In this example, the …
FIG. 16B is a TEM photograph of the CNW contained in the graphene structure, which shows that the CNW is composed of a plurality of graphene sheets.
FIG. 17C is the Raman spectrum of the graphene structure, from which a graphene-derived Raman signal was confirmed. [0132] From the above, it was also confirmed …
FIG. 18. As shown in this SEM photograph, it was confirmed that a graphene structure including graphene and CNW grows on the Si wafer as a semiconductor without …
FIG. 19. As shown in this SEM photograph, it was confirmed that a graphene structure including graphene and CNW grows on the wafer having a metal surface …
FIGS. 20A to 20D, it was confirmed that when the pressure is in the range of 20 mTorr to 5 Torr, the graphene structure can grow even though the density and …
FIG. 21. In this example, as a target substrate, a wafer (without a metal catalyst layer) having a SiO 2 film formed on a Si base was prepared. Other conditions …
FIG. 22. As shown in this SEM photograph, it was confirmed that a graphene structure including graphene and CNW grows on a Si wafer as a semiconductor without …
FIG. 23. As shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene structure forming method comprising: preparing a target substrate; and forming a graphene structure on a surface of the target substrate by remote microwave plasma chemical vapor deposition (CVD) using a carbon-containing gas as a film-forming raw material gas in a state in which the surface of the target substrate has no catalytic function, wherein the forming the graphene structure includes: disposing the target substrate in a region spaced apart from a plasma generation region where the remote microwave plasma is generated; generating the remote microwave plasma in the plasma generation region; supplying the carbon-containing gas to a predetermined position between the plasma generation region and the target substrate such that the carbon-containing gas is dissociated by the remote microwave plasma; and supplying the dissociated carbon-containing gas to the target substrate, wherein the forming the graphene structure is performed by a processing apparatus, the processing apparatus including: a processing container configured to accommodate the target substrate; a mounting table configured to horizontally mount the target substrate inside the processing container; a heating mechanism configured to heat the target substrate; a microwave introduction device provided on the processing container; a gas supply mechanism con fi gured to supply a gas including the carbon-containing gas as the fi lm-forming raw material gas into the processing container; and an exhaust mechanism con fi gured to exhaust an interior of the processing container, wherein the microwave introduction device includes a microwave generator con fi gured to generate microwaves, and a plurality of microwave radiation mechanisms supplied with the microwaves distributed from the microwave generator and con fi gured to radiate the microwaves into the processing container, wherein each of the microwave radiation mechanisms includes a tuner con fi gured to perform impedance matching, a planar slot antenna having slots con fi gured to radiate the microwaves, and a microwave transmitting plate that is provided just below the planar slot antenna, fi tted to a ceiling wall of the processing container and made of a dielectric material, wherein the gas supply mechanism supplies a rare gas as a plasma generation g as to the plasma generation region just below the ceiling wall of the processing container, and supplies the carbon-containing gas as the film-forming raw material gas from nozzles, which are fit into openings formed in the ceiling wall and extend downward from the ceiling wall, to the predetermined position between the ceiling wall and the target substrate on the mounting table, [[and]] wherein the carbon-containing gas is a gas selected from a group consisting of ethylene (C 2 H 4), methane (CH 4), ethane (C 2 H 6), propane (C 3 H s), propylene (C 3 H 6), acetylene (C 2 H 2), methanol (CH 3 0 H), and ethanol (C 2 H 5 O H), and wherein the forming the graphene structure is performed under a pressure in a range of 100 mTo rr to 5 Torr such that no carbon nanowall grows. Currently amended
The method of Claim 1, wherein the surface of the target substrate is an insulator or a semiconductor. Original
The method of Claim 1, wherein the surface of the target substrate is a metal. Previously presented
The method of Claim 1, wherein the forming the graphene structure is performed under a temperature of the target substrate in a range of 350 to 1000 degrees C, a microwave power in a range of 100 to 5000 W and a time in a range of 1 to 200 min. Original
(Cu rr ently amended) The method of Claim 1, wherein the graphene structure is composed of only graphene formed parallel to the target substrate. Currently amended
A graphene structure forming apparatus for forming a graphene structure, comprising: a processing container configured to accommodate the target substrate; a mounting table configured to horizontally mount the target substrate inside the processing container; a heating mechanism configured to heat the target substrate; a microwave introduction device provided on the processing container; a gas supply mechanism con fi gured to supply a gas including a carbon-containing gas as a film-forming raw material gas into the processing container; an exhaust mechanism con fi gured to exhaust an interior of the processing container; and a controller configured to control the heating mechanism, the microwave introduction device, the gas supply mechanism and the exhaust mechanism, wherein the microwave introduction device includes a microwave generator con fi gured to generate a microwave, and a plurality of microwave radiation mechanisms supplied with the microwave distributed from the microwave generator and con fi gured to radiate the microwave into the processing container, each of the microwave radiation mechanisms includes a tuner con fi gured to perform impedance matching, a planar slot antenna having slots con fi gured to radiate the microwave, and a microwave transmitting plate that is provided just below the planar slot antenna, fitted to a ceiling wall of the processing container and made of a dielectric material, and the controller controls the heating mechanism, the microwave introduction device, the gas supply mechanism and the exhaust mechanism so that the graphene structure forming method of Claim 1 is performed. Withdrawn
Canceled
Canceled
A graphene structure forming method comprising: preparing a target substrate; and forming a graphene structure n a surface of the target substrate by remote microwave plasma chemical vapor deposition (CVD) using a carbon-containing gas as a film-forming raw material gas, wherein the forming the graphene structure includes: disposing the target substrate in a region spaced apart from a plasma generation region where the remote microwave plasma is generated; generating the remote microwave plasma in the plasma generation region; supplying the carbon-containing gas to a predetermined position between the plasma generation region and the target substrate such that the carbon-containing gas is dissociated by the remote microwave plasma; and supplying the dissociated [[the]] carbon-containing gas to the target substrate, wherein the forming the graphene structure is performed by a processing apparatus, the processing apparatus including: a processing container con fi gured to accommodate the target substrate; a mounting table con fi gured to horizontally mount the target substrate inside the processing container; a heating mechanism configured to heat the target substrate; a microwave introduction device provided on the processing container; a gas supply mechanism configured to supply a gas including the carbon- containing gas as the film-forming raw material gas into the processing container; and an exhaust mechanism con fi gured to exhaust an interior of the processing container, wherein the microwave introduction device includes a microwave generator con fi gured to generate microwaves, and a plurality of microwave radiation mechanisms supplied with the microwaves distributed from the microwave generator and configured to radiate the microwaves into the processing container, wherein each of the microwave radiation mechanisms includes a tuner con fi gured to perform impedance matching, a planar slot antenna having slots con fi gured to radiate the microwaves, and a microwave transmitting plate that is provided just below the planar slot antenna, fi tted to a ceiling wall of the processing container and made of a dielectric material, wherein the gas supply mechanism supplies a rare gas as a plasma generation gas to the plasma generation region just below the ceiling wall of the processing container, and supplies the carbon-containing gas as the fi lm-forming raw material gas from nozzles, which are fit into openings formed in the ceiling wall and extend downward from the ceiling wall, to the predetermined position between the ceiling wall and the target substrate on the mounting table, [[and]] wherein the carbon-containing gas is a gas selected from a group consisting of ethylene (C 2 H 4), methane (CH 4), ethane (C 2 H 6), propane (C 3 H s), propylene (C 3 H 6), acetylene (C 2 H 2), methanol (CH 3 0 H), and ethanol (C 2 H 5 OH)), and wherein the forming the graphene structure is performed under a pressure in a range of 100 mTo rr to 5 Torr such that no carbon nanowall grows. Currently amended
The method of Claim 8, wherein the surface of the target substrate is an insulator, a semiconductor or a metal. Original
The method of Claim 8, wherein the forming the graphene structure is performed under a temperature of the target substrate in a range of 350 to 1000 degrees C, a microwave power in a range of 100 to 5000 W and a time in a range of 1 to 200 min. Original
Canceled
12-16. Canceled
Canceled
18-19. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
remote microwave plasma CVD processing apparatus
Materials described outside the worked examples.
ethylene
C₂H₄
methane
CH₄
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7. [0025] FI G. 9 is a sectional view schematically showing a microwave radiation mechanism in the processing apparatus of FI G. 7. [0026] FI G. 10 is a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.02–5 Torr | — |
— |
Related documents with shared materials, methods, properties, or citations.
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propane
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propylene
C₃H₆
acetylene
C₂H₂
methanol
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FIG. 7. [0025] FI G. 9 is a sectional view schematically showing a microwave radiation mechanism in the processing apparatus of FI G. 7. [0026] FI G. 10 is a …
FIG. 11. As shown in this SEM photograph, it was confirmed that a graphene structure having graphene and CNW grows on the wafer whose surface is made of an …
FIG. 11. As shown in this SEM photograph, it was confirmed that a graphene structure having graphene and CNW grows on the wafer whose surface is made of an …
FIG. 16B is a TEM photograph of the CNW contained in the graphene structure, which shows that the CNW is composed of a plurality of graphene sheets.
FIG. 16B is a TEM photograph of the CNW contained in the graphene structure, which shows that the CNW is composed of a plurality of graphene sheets.
FIG. 16B is a TEM photograph of the CNW contained in the graphene structure, which shows that the CNW is composed of a plurality of graphene sheets.
FIG. 17C is the Raman spectrum of the graphene structure, from which a graphene-derived Raman signal was confirmed. [0132] From the above, it was also confirmed …
FIG. 17C is the Raman spectrum of the graphene structure, from which a graphene-derived Raman signal was confirmed. [0132] From the above, it was also confirmed …
FIG. 17C is the Raman spectrum of the graphene structure, from which a graphene-derived Raman signal was confirmed. [0132] From the above, it was also confirmed …
FIG. 17C is the Raman spectrum of the graphene structure, from which a graphene-derived Raman signal was confirmed. [0132] From the above, it was also confirmed …
FIG. 18. As shown in this SEM photograph, it was confirmed that a graphene structure including graphene and CNW grows on the Si wafer as a semiconductor without …
FIG. 19. As shown in this SEM photograph, it was confirmed that a graphene structure including graphene and CNW grows on the wafer having a metal surface …
FIG. 21. In this example, as a target substrate, a wafer (without a metal catalyst layer) having a SiO 2 film formed on a Si base was prepared. Other conditions …
FIG. 22. As shown in this SEM photograph, it was confirmed that a graphene structure including graphene and CNW grows on a Si wafer as a semiconductor without …
FIG. 22. As shown in this SEM photograph, it was confirmed that a graphene structure including graphene and CNW grows on a Si wafer as a semiconductor without …
| — |
Pressure | 1.33–667 Pa | — |
Pressure | 0.01–5 Torr | — |
Pressure | 1.33–400 Pa | — |
Pressure | 0.01–3 Torr | — |
Pressure | 1.33–133 Pa | — |
Pressure | 0.01–1 Torr | — |
Pressure | 66.7–400 Pa | — |
Pressure | 3–5 Torr | — |
Pressure | 0.1–10 Torr | — |
Pressure | 13.3–1333 Pa | — |
— | 1000–3500 W | — |
Pressure | 0.5–3 Torr | — |
Duration | 0.5–30 minutes | — |
— | 250–4000 W | — |
Duration | 1–200 min | — |
ethane
C₂H₆
propane
C₃H₈
propylene
C₃H₆
acetylene
C₂H₂
methanol
CH₃OH
ethanol
C₂H₅OH
graphene
graphene structure/carbon nanowall
silicon
Si
SiO₂ film
SiO₂
Cu film
Cu
TaN barrier film
TaN
rare gas
FIG. 7. [0025] FI G. 9 is a sectional view schematically showing a microwave radiation mechanism in the processing apparatus of FI G. 7. [0026] FI G. 10 is a …
FIG. 11. As shown in this SEM photograph, it was confirmed that a graphene structure having graphene and CNW grows on the wafer whose surface is made of an …
FIG. 11. As shown in this SEM photograph, it was confirmed that a graphene structure having graphene and CNW grows on the wafer whose surface is made of an …
FIG. 16B is a TEM photograph of the CNW contained in the graphene structure, which shows that the CNW is composed of a plurality of graphene sheets.
FIG. 16B is a TEM photograph of the CNW contained in the graphene structure, which shows that the CNW is composed of a plurality of graphene sheets.
FIG. 16B is a TEM photograph of the CNW contained in the graphene structure, which shows that the CNW is composed of a plurality of graphene sheets.
FIG. 17C is the Raman spectrum of the graphene structure, from which a graphene-derived Raman signal was confirmed. [0132] From the above, it was also confirmed …
FIG. 17C is the Raman spectrum of the graphene structure, from which a graphene-derived Raman signal was confirmed. [0132] From the above, it was also confirmed …
FIG. 17C is the Raman spectrum of the graphene structure, from which a graphene-derived Raman signal was confirmed. [0132] From the above, it was also confirmed …
FIG. 17C is the Raman spectrum of the graphene structure, from which a graphene-derived Raman signal was confirmed. [0132] From the above, it was also confirmed …
FIG. 18. As shown in this SEM photograph, it was confirmed that a graphene structure including graphene and CNW grows on the Si wafer as a semiconductor without …
FIG. 19. As shown in this SEM photograph, it was confirmed that a graphene structure including graphene and CNW grows on the wafer having a metal surface …
FIG. 21. In this example, as a target substrate, a wafer (without a metal catalyst layer) having a SiO 2 film formed on a Si base was prepared. Other conditions …
FIG. 22. As shown in this SEM photograph, it was confirmed that a graphene structure including graphene and CNW grows on a Si wafer as a semiconductor without …
FIG. 22. As shown in this SEM photograph, it was confirmed that a graphene structure including graphene and CNW grows on a Si wafer as a semiconductor without …
| — |
Pressure | 1.33–667 Pa | — |
Pressure | 0.01–5 Torr | — |
Pressure | 1.33–400 Pa | — |
Pressure | 0.01–3 Torr | — |
Pressure | 1.33–133 Pa | — |
Pressure | 0.01–1 Torr | — |
Pressure | 66.7–400 Pa | — |
Pressure | 3–5 Torr | — |
Pressure | 0.1–10 Torr | — |
Pressure | 13.3–1333 Pa | — |
— | 1000–3500 W | — |
Pressure | 0.5–3 Torr | — |
Duration | 0.5–30 minutes | — |
— | 250–4000 W | — |
Duration | 1–200 min | — |
ethane
C₂H₆
propane
C₃H₈
propylene
C₃H₆
acetylene
C₂H₂
methanol
CH₃OH
ethanol
C₂H₅OH
graphene
graphene structure/carbon nanowall
silicon
Si
SiO₂ film
SiO₂
Cu film
Cu
TaN barrier film
TaN
rare gas
FIG. 7. [0025] FI G. 9 is a sectional view schematically showing a microwave radiation mechanism in the processing apparatus of FI G. 7. [0026] FI G. 10 is a …
FIG. 11. As shown in this SEM photograph, it was confirmed that a graphene structure having graphene and CNW grows on the wafer whose surface is made of an …
FIG. 11. As shown in this SEM photograph, it was confirmed that a graphene structure having graphene and CNW grows on the wafer whose surface is made of an …
FIG. 16B is a TEM photograph of the CNW contained in the graphene structure, which shows that the CNW is composed of a plurality of graphene sheets.
FIG. 16B is a TEM photograph of the CNW contained in the graphene structure, which shows that the CNW is composed of a plurality of graphene sheets.
FIG. 16B is a TEM photograph of the CNW contained in the graphene structure, which shows that the CNW is composed of a plurality of graphene sheets.
FIG. 17C is the Raman spectrum of the graphene structure, from which a graphene-derived Raman signal was confirmed. [0132] From the above, it was also confirmed …
FIG. 17C is the Raman spectrum of the graphene structure, from which a graphene-derived Raman signal was confirmed. [0132] From the above, it was also confirmed …
FIG. 17C is the Raman spectrum of the graphene structure, from which a graphene-derived Raman signal was confirmed. [0132] From the above, it was also confirmed …
FIG. 17C is the Raman spectrum of the graphene structure, from which a graphene-derived Raman signal was confirmed. [0132] From the above, it was also confirmed …
FIG. 18. As shown in this SEM photograph, it was confirmed that a graphene structure including graphene and CNW grows on the Si wafer as a semiconductor without …
FIG. 19. As shown in this SEM photograph, it was confirmed that a graphene structure including graphene and CNW grows on the wafer having a metal surface …
FIG. 21. In this example, as a target substrate, a wafer (without a metal catalyst layer) having a SiO 2 film formed on a Si base was prepared. Other conditions …
FIG. 22. As shown in this SEM photograph, it was confirmed that a graphene structure including graphene and CNW grows on a Si wafer as a semiconductor without …
FIG. 22. As shown in this SEM photograph, it was confirmed that a graphene structure including graphene and CNW grows on a Si wafer as a semiconductor without …
| — |
Pressure | 1.33–667 Pa | — |
Pressure | 0.01–5 Torr | — |
Pressure | 1.33–400 Pa | — |
Pressure | 0.01–3 Torr | — |
Pressure | 1.33–133 Pa | — |
Pressure | 0.01–1 Torr | — |
Pressure | 66.7–400 Pa | — |
Pressure | 3–5 Torr | — |
Pressure | 0.1–10 Torr | — |
Pressure | 13.3–1333 Pa | — |
— | 1000–3500 W | — |
Pressure | 0.5–3 Torr | — |
Duration | 0.5–30 minutes | — |
— | 250–4000 W | — |
Duration | 1–200 min | — |
ethane
C₂H₆
propane
C₃H₈
propylene
C₃H₆
acetylene
C₂H₂
methanol
CH₃OH
ethanol
C₂H₅OH
graphene
graphene structure/carbon nanowall
silicon
Si
SiO₂ film
SiO₂
Cu film
Cu
TaN barrier film
TaN
rare gas
FIG. 7. [0025] FI G. 9 is a sectional view schematically showing a microwave radiation mechanism in the processing apparatus of FI G. 7. [0026] FI G. 10 is a …
FIG. 11. As shown in this SEM photograph, it was confirmed that a graphene structure having graphene and CNW grows on the wafer whose surface is made of an …
FIG. 11. As shown in this SEM photograph, it was confirmed that a graphene structure having graphene and CNW grows on the wafer whose surface is made of an …
FIG. 16B is a TEM photograph of the CNW contained in the graphene structure, which shows that the CNW is composed of a plurality of graphene sheets.
FIG. 16B is a TEM photograph of the CNW contained in the graphene structure, which shows that the CNW is composed of a plurality of graphene sheets.
FIG. 16B is a TEM photograph of the CNW contained in the graphene structure, which shows that the CNW is composed of a plurality of graphene sheets.
FIG. 17C is the Raman spectrum of the graphene structure, from which a graphene-derived Raman signal was confirmed. [0132] From the above, it was also confirmed …
FIG. 17C is the Raman spectrum of the graphene structure, from which a graphene-derived Raman signal was confirmed. [0132] From the above, it was also confirmed …
FIG. 17C is the Raman spectrum of the graphene structure, from which a graphene-derived Raman signal was confirmed. [0132] From the above, it was also confirmed …
FIG. 17C is the Raman spectrum of the graphene structure, from which a graphene-derived Raman signal was confirmed. [0132] From the above, it was also confirmed …
FIG. 18. As shown in this SEM photograph, it was confirmed that a graphene structure including graphene and CNW grows on the Si wafer as a semiconductor without …
FIG. 19. As shown in this SEM photograph, it was confirmed that a graphene structure including graphene and CNW grows on the wafer having a metal surface …
FIG. 21. In this example, as a target substrate, a wafer (without a metal catalyst layer) having a SiO 2 film formed on a Si base was prepared. Other conditions …
FIG. 22. As shown in this SEM photograph, it was confirmed that a graphene structure including graphene and CNW grows on a Si wafer as a semiconductor without …
FIG. 22. As shown in this SEM photograph, it was confirmed that a graphene structure including graphene and CNW grows on a Si wafer as a semiconductor without …
| — |
Pressure | 1.33–667 Pa | — |
Pressure | 0.01–5 Torr | — |
Pressure | 1.33–400 Pa | — |
Pressure | 0.01–3 Torr | — |
Pressure | 1.33–133 Pa | — |
Pressure | 0.01–1 Torr | — |
Pressure | 66.7–400 Pa | — |
Pressure | 3–5 Torr | — |
Pressure | 0.1–10 Torr | — |
Pressure | 13.3–1333 Pa | — |
— | 1000–3500 W | — |
Pressure | 0.5–3 Torr | — |
Duration | 0.5–30 minutes | — |
— | 250–4000 W | — |
Duration | 1–200 min | — |