IN THE UNITED STATES PATENT AND TRADEMARK OFFICE TITLE: INTEGRATION OF MONOLAYER GRAPHENE WITH A SEMICONDUCTOR DEVICE

Deji Akinwande

Patent

Atlas literature

Patent

US 10,175,187

IN THE UNITED STATES PATENT AND TRADEMARK OFFICE TITLE: INTEGRATION OF MONOLAYER GRAPHENE WITH A SEMICONDUCTOR DEVICE

Deji Akinwande, Seyedeh Maryam Mortazavi Zanjani, Mir Mohammad Sadeghi, Milo Holt

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

3 independent · 13 dependent

1
Independent
1-3.. Canceled
3
Independent
Canceled
4
Independentmonolayer graphenemonolayer graphene gas sensor integrated with CMOS
A method of preparing a gas sensor, the method comprising: transferring monolayer graphene to a top surface of a CMOS device comprising: forming a ring oscillator circuit; forming a passivation layer above the ring oscillator circuit that covers the top surface of the CMOS device; and forming interconnect vias comprising sidewalls through the passivation layer and establishing electrical connections to the ring oscillator circuit; patterning and etching the monolayer graphene to form monolayer graphene channels each having two ends in locations for electrically connecting the monolayer graphene channels to the interconnect vias at the top surface of the CMOS device; and electrically connecting each end of each of the monolayer graphene channels to one corresponding interconnect via per end. Currently amended
1. 5
  Dependent← claim 4monolayer graphene gas sensor integrated with CMOS
  The method of claim 4, wherein the interconnect vias have a sidewall angle of less than 90 0. Original
2. 6
  Dependent← claim 4monolayer graphenemonolayer graphene gas sensor integrated with CMOS
  The method of claim 4, wherein the CMOS device further comprises a metallic pad under the passivation layer at each of the locations underlying the monolayer graphene channels. Currently amended
3. 7
  Dependent← claim 4monolayer graphenemonolayer graphene gas sensor integrated with CMOS
  The method of claim 4, wherein transferring the monolayer graphene to a- the top surface of a-the CMOS device comprises chemical vapor deposition process 4f -for forming the monolayer graphene. Currently amended
4. 8
  Dependent← claim 4monolayer graphene
  The method of claim 4, wherein patterning and etching the monolayer graphene to form the monolayer graphene channels comprises processes of electron beam lithography patterning and low-power reaction-ion-etching in oxygen plasma. Currently amended
5. 9
  Dependent← claim 4metal contactsmonolayer graphene gas sensor integrated with CMOS
  The method of claim 4, wherein electrically connecting each end of each of the monolayer graphene channels to the one corresponding interconnect via per end comprises depositing metal contacts. Currently amended
6. 13
  Dependent← claim 4monolayer graphene gas sensor integrated with CMOS
  The method of claim 4, wherein electrically connecting each end of each of the monolayer graphene channels to the one corresponding interconnect via per end comprises using electron beam lithography followed by metal deposition using e-beam evaporation and lift-oﬀ processes. Currently amended
7. 16
  Dependent← claim 4metal contactsmonolayer graphene gas sensor integrated with CMOS
  The method of claim 4, wherein electrically connecting each end of each of the monolayer graphene channels to the one corresponding interconnect via per end comprises depositing metal that spans from the end of the monolayer graphene to the interconnect via. Currently amended
8. 18
  Dependent← claim 4monolayer graphene gas sensor integrated with CMOS
  The method of claim 4, wherein the CMOS device further comprises a metallization layer beneath the passivation layer. Previously presented

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

monolayer graphene gas sensor integrated with CMOS

metal contactscontacts

monolayer graphenechannel

interconnect_viasinterconnect vias

passivationpassivation

metallic_padmetallic pad

metallization_layer

Materials

Materials described outside the worked examples.

monolayer graphene

Gas Sensing Channel Material

metal contacts

Electrical Contact

Process steps

Additional fabrication and treatment steps described in the patent.

Cvd Growth

Step 1

Materials:monolayer graphene

Lithography And Etch

Step 2

Why these are connected

Related documents with shared materials, methods, properties, or citations.

IN THE UNITED STATES PATENT AND TRADEMARK OFFICE TITLE: INTEGRATION OF MONOLAYER GRAPHENE WITH A SEMICONDUCTOR DEVICE | Matter42 Literature