INXGA1-XASPI-Y QUATERNARY ETCH STOP FOR IMPROVED CHEMICAL RESISTIVITY OF GALLIUM ARSENIDE FIELD EFFECT TRANSISTORS

Allen W. Hanson

Patent

Atlas literature

Patent

US 8,288,253

INXGA₁-XASPI-Y QUATERNARY ETCH STOP FOR IMPROVED CHEMICAL RESISTIVITY OF GALLIUM ARSENIDE FIELD EFFECT TRANSISTORS

Allen W. Hanson

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 1, a diagram is shown illustrating cross section 100 of a semiconductor wafer in accordance with an example embodiment of the present invention. The …

FIG. 2

FIG. 2 is a diagram illustrating the semiconductor wafer after formation of source and drain ohmic contacts for the device;

FIG. 3

FIG. 3 is a diagram illustrating the semiconductor wafer after isolation implantation is performed in regions outside of the 5 device lateral boundaries;

FIG. 4

FIG. 4 is a diagram illustrating the semiconductor wafer after a ﬁrst recess etch is performed to form a recess one region of the device;

FIG. 5

FIG. 5 is a diagram illustrating the semiconductor wafer 10 after a second recess etch is performed to form the gate region of the device;

FIG. 6

FIG. 6 is a diagram illustrating the semiconductor wafer after formation of a gate electrode of the device;

FIG. 7

FIG. 7 is a diagram illustrating an alternative 15 embodiment in which a recess one region is asymmetrical about a gate electrode;

FIG. 8

FIG. 8, a diagram is shown illustrating a cross section 800 of a semiconductor wafer in accordance with another alternative embodiment of the present …

FIG. 9

FIG. 9, a diagram is shown illustrating an alternative view of a cross section 900 of a device in accordance with an example embodiment of the present …

FIG. 10

FIG. 10 is ﬂow diagram illustrating a process in accordance with an example embodiment of the present invention. 5 Detailed Description of the Preferred …

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

1 independent · 0 dependent

882
Independent
2.00013 CLAIMS

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

gallium arsenide field effect transistor

second contact layer (highly doped)second contact

first contact layerfirst contact

InxGa₁-xAsP₁-yetch stop

barrier layerbarrier

channel layerchannel

buffer layerbuffer

Materials

Materials described outside the worked examples.

InxGa₁-xAsP₁-y quaternary etch-stop layer

InxGa₁-xAsP₁-y

Etch Stop Layer

channel layer

Channel Layer

barrier layer

Process steps

Additional fabrication and treatment steps described in the patent.

Epitaxial Growth And Etch

Step 1

Process details

notes:First and second contact layers have a first etch rate; quaternary etch-stop layer has a second etch rate in a chosen first etch chemistry

steps:growing a channel layer on a buffer layer, growing a barrier layer on the channel layer, epitaxially growing a quaternary etch-stop layer (InxGa₁-xAsP₁-y) on the barrier layer, growing a first contact layer on the quaternary etch-stop layer, growing a second contact layer on the first contact layer, etching portions of the second contact layer to reveal a first recess surface, etching portions of the first contact layer to reveal a second recess surface

Materials:

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Thickness	10–50 Å	—

Why these are connected

Related documents with shared materials, methods, properties, or citations.

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