GaN Structures

Daniel Marvin Kinzer

Patent

Atlas literature

Patent

US 10,446,542

GaN Structures

Daniel Marvin Kinzer

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

3 independent · 17 dependent

1
IndependentGaN2DEG inducing layerGaN-based lateral transistor with field plate and capacitor (semiconductor device)
A semiconductor device, comprising: a substrate comprising GaN; a two dimensional electron gas (2DEG) inducing layer on the substrate; a lateral transistor on the 2DEG inducing layer, the lateral transistor comprising: source and drain contacts to the 2DEG inducing layer, a gate stack between the source and drain contacts, and a ﬁeld plate between the gate and the drain contact; one or more insulation layers on the 2DEG inducing layer, wherein the ﬁeld plate is spaced apart from the 2DEG inducing layer by the one or more insulation layers; and a capacitor, wherein neia pi ate a, at least a portion of a plate of the capacitor Le Io rmea i a same semic p rocessing lay (. Currently amended
1. 2
  Dependent← claim 1GaN-based lateral transistor with field plate and capacitor (semiconductor device)
  The device of claim 1, wherein a ﬁrst portion of the ﬁeld plate is spaced apart from the 2DEG inducing layer by the one or more insulation layers by a distance less than 200 nm, and a second portion of the ﬁeld plate is spaced apart from the 2DEG inducing layer by the one or more insulation layers by a distance greater than 200 nm. Original
2. 3
  Dependent← claim 1GaN-based lateral transistor with field plate and capacitor (semiconductor device)
  The device of claim 1, wherein at least one of the one or more insulation layers contacts the ﬁrst portion of the ﬁeld plate and does not contact the second portion of the ﬁeld plate. Original
3. 4
  Dependent← claim 1GaN-based lateral transistor with field plate and capacitor (semiconductor device)
  The device of claim 1, wherein the ﬁeld plate is conﬁgured to substantially prevent electronic conduction in a portion of the 2DEG inducing layer when applied with a potential of 40 V less than the adjacent 2DEG inducing layer. Original
4. 5
  Dependent← claim 1GaN-based lateral transistor with field plate and capacitor (semiconductor device)
  The device of claim 1, further comprising a conductive gate contact contacting the gate stack, wherein the one or more insulation layers comprises ﬁrst and second insulation layers, wherein a portion of the gate contact is spaced apart from the ﬁrst insulation layer by the second insulation layer, and wherein the at least one insulation layer on the 2DEG inducing layer is the second insulation layer. Original
5. 6
  Dependent← claim 1GaN-based lateral transistor with field plate and capacitor (semiconductor device)GaN-based diode with field plate
  The device of claim 1, further comprising a diode having a ﬁeld plate, wherein the ﬁeld plate of the diode is formed at the same time and from the same material as the ﬁeld plate of the lateral transistor. Original
8
IndependentGaN2DEG inducing layerGaN-based electronic component (packaged die with lateral transistor and capacitor)
An electronic component, comprising: a package base; and at least one GaN-based die secured to the package base and including an electronic circuit comprising: a substrate comprising GaN; a two dimensional electron gas (2DEG) inducing layer on the substrate; a lateral transistor on the 2DEG inducing layer, the lateral transistor comprising: source and drain contacts to the 2DEG inducing layer, a gate stack between the source and drain contacts, and a ﬁeld plate between the gate and the drain contact; one or more insulation layers on the 2DEG inducing layer, wherein the ﬁeld plate is spaced apart from the 2DEG inducing layer by the one or more insulation layers; and a capacitor, wherein at least a portion of a plate of the capacitor the ﬁeld plate of the lateral transistor are formed in a same semiconductor processing lay Currently amended
1. 9
  Dependent← claim 8GaN-based electronic component (packaged die with lateral transistor and capacitor)
  The component of claim 8, wherein a ﬁrst portion of the ﬁeld plate is spaced apart from the 2DEG inducing layer by the one or more insulation layers by a distance less than 200 nm, and a second portion of the ﬁeld plate is spaced apart from the 2DEG inducing layer by the one or more insulation layers by a distance greater than 200 nm. Original
2. 10
  Dependent← claim 8GaN-based electronic component (packaged die with lateral transistor and capacitor)
  The component of claim 8, wherein at least one of the one or more insulation layers contacts the ﬁrst portion of the ﬁeld plate and does not contact the second portion of the ﬁeld plate. Original
3. 11
  Dependent← claim 8GaN-based electronic component (packaged die with lateral transistor and capacitor)
  The component of claim 8, wherein the ﬁeld plate is conﬁgured to substantially prevent electronic conduction in a portion of the 2DEG inducing layer when applied with a potential of 40 V less than the adjacent 2DEG inducing layer. Original
4. 12
  Dependent← claim 8GaN-based electronic component (packaged die with lateral transistor and capacitor)
  The component of claim 8, wherein the electronic circuit further comprises a conductive gate contact contacting the gate stack, wherein the one or more insulation layers comprises ﬁrst and second insulation layers, wherein a portion of the gate contact is spaced apart from the ﬁrst insulation layer by the second insulation layer, and wherein the at least one insulation layer on the 2DEG inducing layer is the second insulation layer. Original
5. 13
  Dependent← claim 8GaN-based electronic component (packaged die with lateral transistor and capacitor)GaN-based diode with field plate
  The component of claim 8, wherein the electronic circuit further comprises a diode having a ﬁeld plate, wherein the ﬁeld plate of the diode is formed at the same time and from the same material as the ﬁeld plate of the lateral transistor. Original
15
IndependentGaN2DEG inducing layerGaN-based lateral transistor with field plate and capacitor (semiconductor device)GaN-based diode with field plate
A semiconductor device, comprising: a substrate comprising GaN; a two dimensional electron gas (2DEG) inducing layer on the substrate; a lateral transistor on the 2DEG inducing layer, the lateral transistor comprising: source and drain contacts to the 2DEG inducing layer, a gate stack between the source and drain contacts, and a ﬁeld plate between the gate and the drain contact; one or more insulation layers on the 2DEG inducing layer, wherein the ﬁeld plate is spaced apart from the 2DEG inducing layer by the one or more insulation layers; and a diode having a ﬁeld plate, wherein the ﬁeld plate of the diode, the ﬁeld plate of the lateral transistor-formed in a same semiconductor processing la,. Currently amended

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

GaN-based lateral transistor with field plate and capacitor (semiconductor device)

insulation layerinsulation layer(s)

2DEG inducing layer2DEG inducing layer

GaNsubstrate

GaN-based electronic component (packaged die with lateral transistor and capacitor)

insulation layerinsulation layer(s)

2DEG inducing layer2DEG inducing layer

Materials

Materials described outside the worked examples.

GaN

Substrate

2DEG inducing layer

2DEG Inducing Layer (Channel Layer)

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Thickness	≤ 200 nm	—
Thickness

Why these are connected

Related documents with shared materials, methods, properties, or citations.

GaN Structures | Matter42 Literature