Patent
US 10,847,625INDIUM-GALLIUM-NITRIDE STRUCTURES AND DEVICES
MICHAEL R. KRAMES
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,847,625Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C, GaN seed surfaces 102a can be used for at least lateral growth of InGaN 105, forming InGaN/GaN heterojunctions that are not co-planar with the …
FIGS. 2A-2E shows an example of a process flow for fabricating an InGaN layer having a relaxed InGaN region provided by the present disclosure. [14]
FIGS. 3A-3E show an example of a process flow for fabricating an InGaN layer having a relaxed InGaN region provided by the present disclosure. [15]
FIGS. 4A-4E show an example of a process flow for fabricating an InGaN layer having a relaxed InGaN region provided by the present disclosure. [16]
FIG. 5 shows an example of a positive etch mask having various shapes, dimensions, and orientations with respect to the (1-100) and (11 -20) crystallographic …
FIG. 6 shows an example of a negative etch mask having various shapes, dimensions, and orientations with respect to the (1-100) and (11-20) crystallographic …
FIG. 7 shows a transition of an InGaN lattice characterized by a lattice constant "a" similar to that of GaN (solid circles) to a relaxed InGaN lattice …
FIG. 8 shows an example of an LED incorporating a III -nitride semiconductor structure provided by the present disclosure. [20]
FIGS. 9A-9D show examples of LEDs incorporating a III -nitride semiconductor structure provided by the present disclosure. [21]
FIG. 10 shows an example of a laser diode (LD) incorporating a III -nitride semiconductor structure provided by the present disclosure. [22]
FIG. 11 shows examples of lighting devices and systems in which LEDs provided by the present disclosure can be incorporated. [23]
FIG. 12 shows examples of display devices and systems in which LEDs provided by the present disclosure can be incorporated. [24]
FIG. 13 shows a cross-sectional view of an example of a III -nitride semiconductor structure provided by the present disclosure. [25]
FIGS. 14A-14B show ranges of InN molar fractions and a-lattice constants, respectively, for (0001) relaxed InGaN regions according to peak emission wavelength. …
FIGS. 15A-15F show an example of process flows for fabricating an InGaN layer provided by the present disclosure. [27]
FIGS. 16A-16F show an example of process flows for fabricating an InGaN layer provided by the present disclosure. [28]
FIGS. 17A and 17B show a cross-sectional view of examples of a III -nitride semiconductor structure provided by the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A I II -nitride semiconductor structure, comprising an InGaN region, wherein, the InGaN region comprises a (0001) InGaN region; and the (0001) InGaN region is characterized by an in-plane a-lattice constant, wherein the in- plane a-lattice constant is greater than 3.19 A; and only one plurality of seed regions underlying the InGaN region; wherein, each seed region of the only one plurality of seed regions comprises a semiconductor material having a Wurtzite crystal structure; each seed region of the only one plurality of seed regions has only one plurality of planar seed interfaces comprising a heterojunction underlying the InGaN region; each planar seed interface of the only one plurality of planar seed interfaces has a crystallographically equivalent orientation and is characterized by a crystallographic plane; the crystallographic plane is not parallel to a (0001) crystallographic plane of the (0001) InGaN region. Currently amended
The semiconductor structure of claim 1, wherein the semiconductor material comprises GaN, A l N, or AlGaN. Previously presented
The semiconductor structure of claim 1, wherein, the crystallographic plane is parallel to an a-plane, a m -plane, or a plane between the a-plane and the m -plane. Previously presented
The semiconductor structure of claim 1, wherein the only one plurality of seed regions is characterized by a periodicity in at least one dimension. Previously presented
The semiconductor structure of claim 1, wherein the only one plurality of seed regions is characterized by an array of shapes. Previously presented
The semiconductor structure of claim 1, wherein, the I II -Nitride semiconductor structure is characterized by an area defined by a width and a l ength; and the area is greater than 0. 1 mm 2. Previously presented
A semiconductor device comprising the I II -Nitride semiconductor structure of claim 1. Previously presented
28-30. 3 1. The semiconductor structure of claim 1, wherein, each seed region comprises GaN, and the heterojunction is a GaN-InGaN heterojunction. Canceled
3 2. The semiconductor structure of claim 1, wherein each seed region comprises GaN and has a lattice constant of about 3.189 A. Previously presented
The semiconductor structure of claim 1, wherein the crystallographic plane is parallel to a (10-11) crystallographic plane. Previously presented
2-4. Canceled
Canceled
2 Canceled
8-11. Canceled
Canceled
Canceled
1 9-25. Canceled
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
III-Nitride semiconductor structure with relaxed InGaN region on Wurtzite seed regions
III-Nitride LED device structure
Materials described outside the worked examples.
InGaN
seed region semiconductor (Wurtzite)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
in-plane a-lattice constant of claimed (0001) InGaN region | ≥ 3.19 | InGaN |
in-plane a-lattice constant of relaxed InGaN (abstract range) | 3.19–3.5 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,847,625Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C, GaN seed surfaces 102a can be used for at least lateral growth of InGaN 105, forming InGaN/GaN heterojunctions that are not co-planar with the …
FIGS. 2A-2E shows an example of a process flow for fabricating an InGaN layer having a relaxed InGaN region provided by the present disclosure. [14]
FIGS. 3A-3E show an example of a process flow for fabricating an InGaN layer having a relaxed InGaN region provided by the present disclosure. [15]
FIGS. 4A-4E show an example of a process flow for fabricating an InGaN layer having a relaxed InGaN region provided by the present disclosure. [16]
FIG. 5 shows an example of a positive etch mask having various shapes, dimensions, and orientations with respect to the (1-100) and (11 -20) crystallographic …
FIG. 6 shows an example of a negative etch mask having various shapes, dimensions, and orientations with respect to the (1-100) and (11-20) crystallographic …
FIG. 7 shows a transition of an InGaN lattice characterized by a lattice constant "a" similar to that of GaN (solid circles) to a relaxed InGaN lattice …
FIG. 8 shows an example of an LED incorporating a III -nitride semiconductor structure provided by the present disclosure. [20]
FIGS. 9A-9D show examples of LEDs incorporating a III -nitride semiconductor structure provided by the present disclosure. [21]
FIG. 10 shows an example of a laser diode (LD) incorporating a III -nitride semiconductor structure provided by the present disclosure. [22]
FIG. 11 shows examples of lighting devices and systems in which LEDs provided by the present disclosure can be incorporated. [23]
FIG. 12 shows examples of display devices and systems in which LEDs provided by the present disclosure can be incorporated. [24]
FIG. 13 shows a cross-sectional view of an example of a III -nitride semiconductor structure provided by the present disclosure. [25]
FIGS. 14A-14B show ranges of InN molar fractions and a-lattice constants, respectively, for (0001) relaxed InGaN regions according to peak emission wavelength. …
FIGS. 15A-15F show an example of process flows for fabricating an InGaN layer provided by the present disclosure. [27]
FIGS. 16A-16F show an example of process flows for fabricating an InGaN layer provided by the present disclosure. [28]
FIGS. 17A and 17B show a cross-sectional view of examples of a III -nitride semiconductor structure provided by the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A I II -nitride semiconductor structure, comprising an InGaN region, wherein, the InGaN region comprises a (0001) InGaN region; and the (0001) InGaN region is characterized by an in-plane a-lattice constant, wherein the in- plane a-lattice constant is greater than 3.19 A; and only one plurality of seed regions underlying the InGaN region; wherein, each seed region of the only one plurality of seed regions comprises a semiconductor material having a Wurtzite crystal structure; each seed region of the only one plurality of seed regions has only one plurality of planar seed interfaces comprising a heterojunction underlying the InGaN region; each planar seed interface of the only one plurality of planar seed interfaces has a crystallographically equivalent orientation and is characterized by a crystallographic plane; the crystallographic plane is not parallel to a (0001) crystallographic plane of the (0001) InGaN region. Currently amended
The semiconductor structure of claim 1, wherein the semiconductor material comprises GaN, A l N, or AlGaN. Previously presented
The semiconductor structure of claim 1, wherein, the crystallographic plane is parallel to an a-plane, a m -plane, or a plane between the a-plane and the m -plane. Previously presented
The semiconductor structure of claim 1, wherein the only one plurality of seed regions is characterized by a periodicity in at least one dimension. Previously presented
The semiconductor structure of claim 1, wherein the only one plurality of seed regions is characterized by an array of shapes. Previously presented
The semiconductor structure of claim 1, wherein, the I II -Nitride semiconductor structure is characterized by an area defined by a width and a l ength; and the area is greater than 0. 1 mm 2. Previously presented
A semiconductor device comprising the I II -Nitride semiconductor structure of claim 1. Previously presented
28-30. 3 1. The semiconductor structure of claim 1, wherein, each seed region comprises GaN, and the heterojunction is a GaN-InGaN heterojunction. Canceled
3 2. The semiconductor structure of claim 1, wherein each seed region comprises GaN and has a lattice constant of about 3.189 A. Previously presented
The semiconductor structure of claim 1, wherein the crystallographic plane is parallel to a (10-11) crystallographic plane. Previously presented
2-4. Canceled
Canceled
2 Canceled
8-11. Canceled
Canceled
Canceled
1 9-25. Canceled
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
III-Nitride semiconductor structure with relaxed InGaN region on Wurtzite seed regions
III-Nitride LED device structure
Materials described outside the worked examples.
InGaN
seed region semiconductor (Wurtzite)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
in-plane a-lattice constant of claimed (0001) InGaN region | ≥ 3.19 | InGaN |
in-plane a-lattice constant of relaxed InGaN (abstract range) | 3.19–3.5 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,847,625Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C, GaN seed surfaces 102a can be used for at least lateral growth of InGaN 105, forming InGaN/GaN heterojunctions that are not co-planar with the …
FIGS. 2A-2E shows an example of a process flow for fabricating an InGaN layer having a relaxed InGaN region provided by the present disclosure. [14]
FIGS. 3A-3E show an example of a process flow for fabricating an InGaN layer having a relaxed InGaN region provided by the present disclosure. [15]
FIGS. 4A-4E show an example of a process flow for fabricating an InGaN layer having a relaxed InGaN region provided by the present disclosure. [16]
FIG. 5 shows an example of a positive etch mask having various shapes, dimensions, and orientations with respect to the (1-100) and (11 -20) crystallographic …
FIG. 6 shows an example of a negative etch mask having various shapes, dimensions, and orientations with respect to the (1-100) and (11-20) crystallographic …
FIG. 7 shows a transition of an InGaN lattice characterized by a lattice constant "a" similar to that of GaN (solid circles) to a relaxed InGaN lattice …
FIG. 8 shows an example of an LED incorporating a III -nitride semiconductor structure provided by the present disclosure. [20]
FIGS. 9A-9D show examples of LEDs incorporating a III -nitride semiconductor structure provided by the present disclosure. [21]
FIG. 10 shows an example of a laser diode (LD) incorporating a III -nitride semiconductor structure provided by the present disclosure. [22]
FIG. 11 shows examples of lighting devices and systems in which LEDs provided by the present disclosure can be incorporated. [23]
FIG. 12 shows examples of display devices and systems in which LEDs provided by the present disclosure can be incorporated. [24]
FIG. 13 shows a cross-sectional view of an example of a III -nitride semiconductor structure provided by the present disclosure. [25]
FIGS. 14A-14B show ranges of InN molar fractions and a-lattice constants, respectively, for (0001) relaxed InGaN regions according to peak emission wavelength. …
FIGS. 15A-15F show an example of process flows for fabricating an InGaN layer provided by the present disclosure. [27]
FIGS. 16A-16F show an example of process flows for fabricating an InGaN layer provided by the present disclosure. [28]
FIGS. 17A and 17B show a cross-sectional view of examples of a III -nitride semiconductor structure provided by the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A I II -nitride semiconductor structure, comprising an InGaN region, wherein, the InGaN region comprises a (0001) InGaN region; and the (0001) InGaN region is characterized by an in-plane a-lattice constant, wherein the in- plane a-lattice constant is greater than 3.19 A; and only one plurality of seed regions underlying the InGaN region; wherein, each seed region of the only one plurality of seed regions comprises a semiconductor material having a Wurtzite crystal structure; each seed region of the only one plurality of seed regions has only one plurality of planar seed interfaces comprising a heterojunction underlying the InGaN region; each planar seed interface of the only one plurality of planar seed interfaces has a crystallographically equivalent orientation and is characterized by a crystallographic plane; the crystallographic plane is not parallel to a (0001) crystallographic plane of the (0001) InGaN region. Currently amended
The semiconductor structure of claim 1, wherein the semiconductor material comprises GaN, A l N, or AlGaN. Previously presented
The semiconductor structure of claim 1, wherein, the crystallographic plane is parallel to an a-plane, a m -plane, or a plane between the a-plane and the m -plane. Previously presented
The semiconductor structure of claim 1, wherein the only one plurality of seed regions is characterized by a periodicity in at least one dimension. Previously presented
The semiconductor structure of claim 1, wherein the only one plurality of seed regions is characterized by an array of shapes. Previously presented
The semiconductor structure of claim 1, wherein, the I II -Nitride semiconductor structure is characterized by an area defined by a width and a l ength; and the area is greater than 0. 1 mm 2. Previously presented
A semiconductor device comprising the I II -Nitride semiconductor structure of claim 1. Previously presented
28-30. 3 1. The semiconductor structure of claim 1, wherein, each seed region comprises GaN, and the heterojunction is a GaN-InGaN heterojunction. Canceled
3 2. The semiconductor structure of claim 1, wherein each seed region comprises GaN and has a lattice constant of about 3.189 A. Previously presented
The semiconductor structure of claim 1, wherein the crystallographic plane is parallel to a (10-11) crystallographic plane. Previously presented
2-4. Canceled
Canceled
2 Canceled
8-11. Canceled
Canceled
Canceled
1 9-25. Canceled
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
III-Nitride semiconductor structure with relaxed InGaN region on Wurtzite seed regions
III-Nitride LED device structure
Materials described outside the worked examples.
InGaN
seed region semiconductor (Wurtzite)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
in-plane a-lattice constant of claimed (0001) InGaN region | ≥ 3.19 | InGaN |
in-plane a-lattice constant of relaxed InGaN (abstract range) | 3.19–3.5 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,847,625Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C, GaN seed surfaces 102a can be used for at least lateral growth of InGaN 105, forming InGaN/GaN heterojunctions that are not co-planar with the …
FIGS. 2A-2E shows an example of a process flow for fabricating an InGaN layer having a relaxed InGaN region provided by the present disclosure. [14]
FIGS. 3A-3E show an example of a process flow for fabricating an InGaN layer having a relaxed InGaN region provided by the present disclosure. [15]
FIGS. 4A-4E show an example of a process flow for fabricating an InGaN layer having a relaxed InGaN region provided by the present disclosure. [16]
FIG. 5 shows an example of a positive etch mask having various shapes, dimensions, and orientations with respect to the (1-100) and (11 -20) crystallographic …
FIG. 6 shows an example of a negative etch mask having various shapes, dimensions, and orientations with respect to the (1-100) and (11-20) crystallographic …
FIG. 7 shows a transition of an InGaN lattice characterized by a lattice constant "a" similar to that of GaN (solid circles) to a relaxed InGaN lattice …
FIG. 8 shows an example of an LED incorporating a III -nitride semiconductor structure provided by the present disclosure. [20]
FIGS. 9A-9D show examples of LEDs incorporating a III -nitride semiconductor structure provided by the present disclosure. [21]
FIG. 10 shows an example of a laser diode (LD) incorporating a III -nitride semiconductor structure provided by the present disclosure. [22]
FIG. 11 shows examples of lighting devices and systems in which LEDs provided by the present disclosure can be incorporated. [23]
FIG. 12 shows examples of display devices and systems in which LEDs provided by the present disclosure can be incorporated. [24]
FIG. 13 shows a cross-sectional view of an example of a III -nitride semiconductor structure provided by the present disclosure. [25]
FIGS. 14A-14B show ranges of InN molar fractions and a-lattice constants, respectively, for (0001) relaxed InGaN regions according to peak emission wavelength. …
FIGS. 15A-15F show an example of process flows for fabricating an InGaN layer provided by the present disclosure. [27]
FIGS. 16A-16F show an example of process flows for fabricating an InGaN layer provided by the present disclosure. [28]
FIGS. 17A and 17B show a cross-sectional view of examples of a III -nitride semiconductor structure provided by the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A I II -nitride semiconductor structure, comprising an InGaN region, wherein, the InGaN region comprises a (0001) InGaN region; and the (0001) InGaN region is characterized by an in-plane a-lattice constant, wherein the in- plane a-lattice constant is greater than 3.19 A; and only one plurality of seed regions underlying the InGaN region; wherein, each seed region of the only one plurality of seed regions comprises a semiconductor material having a Wurtzite crystal structure; each seed region of the only one plurality of seed regions has only one plurality of planar seed interfaces comprising a heterojunction underlying the InGaN region; each planar seed interface of the only one plurality of planar seed interfaces has a crystallographically equivalent orientation and is characterized by a crystallographic plane; the crystallographic plane is not parallel to a (0001) crystallographic plane of the (0001) InGaN region. Currently amended
The semiconductor structure of claim 1, wherein the semiconductor material comprises GaN, A l N, or AlGaN. Previously presented
The semiconductor structure of claim 1, wherein, the crystallographic plane is parallel to an a-plane, a m -plane, or a plane between the a-plane and the m -plane. Previously presented
The semiconductor structure of claim 1, wherein the only one plurality of seed regions is characterized by a periodicity in at least one dimension. Previously presented
The semiconductor structure of claim 1, wherein the only one plurality of seed regions is characterized by an array of shapes. Previously presented
The semiconductor structure of claim 1, wherein, the I II -Nitride semiconductor structure is characterized by an area defined by a width and a l ength; and the area is greater than 0. 1 mm 2. Previously presented
A semiconductor device comprising the I II -Nitride semiconductor structure of claim 1. Previously presented
28-30. 3 1. The semiconductor structure of claim 1, wherein, each seed region comprises GaN, and the heterojunction is a GaN-InGaN heterojunction. Canceled
3 2. The semiconductor structure of claim 1, wherein each seed region comprises GaN and has a lattice constant of about 3.189 A. Previously presented
The semiconductor structure of claim 1, wherein the crystallographic plane is parallel to a (10-11) crystallographic plane. Previously presented
2-4. Canceled
Canceled
2 Canceled
8-11. Canceled
Canceled
Canceled
1 9-25. Canceled
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
III-Nitride semiconductor structure with relaxed InGaN region on Wurtzite seed regions
III-Nitride LED device structure
Materials described outside the worked examples.
InGaN
seed region semiconductor (Wurtzite)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
in-plane a-lattice constant of claimed (0001) InGaN region | ≥ 3.19 | InGaN |
in-plane a-lattice constant of relaxed InGaN (abstract range) | 3.19–3.5 |
Related documents with shared materials, methods, properties, or citations.
GaN
AlN
AlGaN
n-type III-Nitride layer
p-type III-Nitride layer
InN
a-lattice constant of GaN seed region | 3.189–3.189 | GaN |
a-lattice constant of InN | 3.545–3.545 | InN |
Thickness | 440–460 nm | — |
Thickness | 520–540 nm | — |
Thickness | 580–600 nm | — |
Thickness | 620–640 nm | — |
Thickness | 690–710 nm | — |
Thickness | 840–870 nm | — |
Thickness | 940–980 nm | — |
Thickness | 1300–1350 nm | — |
Thickness | 0.5–100 nm | — |
Thickness | 1–30 nm | — |
Thickness | 2–10 mm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 200 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≥ 440 nm | — |
Thickness | ≥ 0.1 mm | — |
GaN
AlN
AlGaN
n-type III-Nitride layer
p-type III-Nitride layer
InN
a-lattice constant of GaN seed region | 3.189–3.189 | GaN |
a-lattice constant of InN | 3.545–3.545 | InN |
Thickness | 440–460 nm | — |
Thickness | 520–540 nm | — |
Thickness | 580–600 nm | — |
Thickness | 620–640 nm | — |
Thickness | 690–710 nm | — |
Thickness | 840–870 nm | — |
Thickness | 940–980 nm | — |
Thickness | 1300–1350 nm | — |
Thickness | 0.5–100 nm | — |
Thickness | 1–30 nm | — |
Thickness | 2–10 mm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 200 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≥ 440 nm | — |
Thickness | ≥ 0.1 mm | — |
GaN
AlN
AlGaN
n-type III-Nitride layer
p-type III-Nitride layer
InN
a-lattice constant of GaN seed region | 3.189–3.189 | GaN |
a-lattice constant of InN | 3.545–3.545 | InN |
Thickness | 440–460 nm | — |
Thickness | 520–540 nm | — |
Thickness | 580–600 nm | — |
Thickness | 620–640 nm | — |
Thickness | 690–710 nm | — |
Thickness | 840–870 nm | — |
Thickness | 940–980 nm | — |
Thickness | 1300–1350 nm | — |
Thickness | 0.5–100 nm | — |
Thickness | 1–30 nm | — |
Thickness | 2–10 mm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 200 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≥ 440 nm | — |
Thickness | ≥ 0.1 mm | — |
GaN
AlN
AlGaN
n-type III-Nitride layer
p-type III-Nitride layer
InN
a-lattice constant of GaN seed region | 3.189–3.189 | GaN |
a-lattice constant of InN | 3.545–3.545 | InN |
Thickness | 440–460 nm | — |
Thickness | 520–540 nm | — |
Thickness | 580–600 nm | — |
Thickness | 620–640 nm | — |
Thickness | 690–710 nm | — |
Thickness | 840–870 nm | — |
Thickness | 940–980 nm | — |
Thickness | 1300–1350 nm | — |
Thickness | 0.5–100 nm | — |
Thickness | 1–30 nm | — |
Thickness | 2–10 mm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 200 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≥ 440 nm | — |
Thickness | ≥ 0.1 mm | — |