Patent
US 8,946,865Gallium-Nitride-on-Handle substrate Materials and Devices and Method of Manufacture
Mark P. D'Evelyn, Arpan Chakraborty, William Houck
Soraa, Inc.·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,946,865Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Listing of Claims: 1-20. canceled
A gallium and nitrogen containing device comprising: a gallium and nitrogen containing material, wherein, the gallium and nitrogen containing material comprises a first surface region, a second surface region, and at least one core region; the first surface region is opposite the second surface region; and the at least one core region extends between the first surface region and the second surface region and through the gallium and nitrogen containing material; an interface region overlying the second surface region; at least one n-type epitaxial growth region overlying the interface region; a core structure extending from the at least one core region through the at least one n-type epitaxial growth region; an active region overlying the at least one n-type epitaxial growth region; a p-type region overlying the active region; a first handle substrate overlying the p-type region, wherein the first handle substrate is transparent, substantially transparent, or reflective; and at least one p-contact region overlying the first handle substrate.
The device of claim 21, wherein the interface region is characterized by a defect density of less than about 10 6 cm⁻² to 10 7 cm⁻² within a matrix region between adjacent core regions.
The device of claim 21, wherein the gallium and nitrogen containing material is provided from a dot core substrate.
The device of claim 21, wherein the first surface region comprises a patterned, textured, or roughened surface structure.
The device of claim 21, wherein, the at least one core region comprises a plurality of core regions; and the plurality of core regions form a square array and a die is approximately square.
The device of claim 21, wherein, the at least one core region comprises a plurality of core regions; and the plurality of core regions form a hexagonal array and a die is approximately triangular.
The device of claim 21, further comprising: an adhesion layer overlying the first surface region; a second handle substrate comprising a first surface region and a second surface region, wherein, the first surface region of the second handle substrate is opposite the second surface region of the second handle substrate; and the second surface region of the second handle substrate overlies the adhesion layer; and at least one n-contact region overlying the first surface region of the second handle substrate.
The device of claim 21, further comprising at least one n-contact region overlying the first surface region.
The device of claim 21, wherein the first handle substrate comprises at least one through via or partial via.
The device of claim 21, wherein the first handle substrate is transparent or substantially transparent and comprises a down-converting light-emitting material.
A gallium and nitrogen containing device comprising: a gallium and nitrogen containing material, wherein, the gallium and nitrogen containing material comprises a first surface region, a second surface region, and at least one core region; the first surface region is opposite the second surface region; and the at least one core region extends between the first surface region and the second surface region and through the gallium and nitrogen containing material; an interface region overlying the second surface region; at least one n-type epitaxial growth region overlying the interface region; a core structure extending from the at least one core region through the at least one n-type epitaxial growth region; an active region overlying the at least one n-type epitaxial growth region; a p-type region overlying the active region; one or more via or street structures providing an electrical barrier between adjacent core regions and a matrix region between the adjacent core regions; at least one electrical contact region overlying a core region surrounded by a via or street structure; and at least one handle substrate.
The device of claim 31, wherein the interface region is characterized by a defect density of less than about 10 6 cm⁻² to 10 7 cm⁻² within the matrix region.
The device of claim 31, wherein the gallium and nitrogen containing material is provided from a dot core substrate.
The device of claim 31, wherein the first surface region comprises a patterned, textured, or roughened surface structure.
The device of claim 31, wherein, the at least one core region comprises a plurality of core regions; and the plurality of core regions form a square array and a die is approximately square.
The device of claim 31, wherein, the at least one core region comprises a plurality of core regions; and the plurality of core regions form a hexagonal array and a die is approximately triangular.
The device of claim 31, further comprising: an adhesion layer overlying the first surface region; and at least one p-contact region overlying the p-type region, wherein, the at least one handle substrate comprises a first surface region and a second surface region; the first surface region is opposite the second surface region; the second surface region overlies the adhesion layer; and the at least one electrical contact region comprises an n-type contact region.
The device of claim 31, further comprising: at least one n-contact region overlying the first surface region; and at least one p-contact region overlying the at least one core region; and wherein the at least one handle substrate comprises a first transparent or reflective handle substrate overlying the at least one p-type region.
The device of claim 31, wherein the at least one handle substrate comprises at least one through via or partial via.
The device of claim 31, wherein, 5 Application No.: 14/301,520 Preliminary Amendment dated the at least one handle substrate is transparent or substantially transparent; and the at least one handle substrate comprises a down-converting light-emitting material. 6
Layer stacks claimed or described, ordered top of device to substrate.
gallium and nitrogen containing LED device with transparent/reflective first handle substrate
Materials described outside the worked examples.
gallium and nitrogen containing material
gallium nitride
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
interface region defect density (matrix region between adjacent core regions) | — | gallium and nitrogen containing material |
Thickness | 390–700 nm |
Related documents with shared materials, methods, properties, or citations.
OPTO-ELECTRONIC AND ELECTRONIC DEVICES USING AN N-FACE OR M-PLANE GALLIUM NITRIDE SUBSTRATE PREPARED VIA AMMONOTHERMAL GROWTH
ANISOTROPIC STRAIN CONTROL IN SEMIPOLAR NITRIDE QUANTUM WELLS BY PARTIALLY OR FULLY RELAXED ALUMINUM INDIUM GALLIUM NITRIDE LAYERS WITH MISFIT DISLOCATIONS
Patent
Atlas literature
Patent
US 8,946,865Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Listing of Claims: 1-20. canceled
A gallium and nitrogen containing device comprising: a gallium and nitrogen containing material, wherein, the gallium and nitrogen containing material comprises a first surface region, a second surface region, and at least one core region; the first surface region is opposite the second surface region; and the at least one core region extends between the first surface region and the second surface region and through the gallium and nitrogen containing material; an interface region overlying the second surface region; at least one n-type epitaxial growth region overlying the interface region; a core structure extending from the at least one core region through the at least one n-type epitaxial growth region; an active region overlying the at least one n-type epitaxial growth region; a p-type region overlying the active region; a first handle substrate overlying the p-type region, wherein the first handle substrate is transparent, substantially transparent, or reflective; and at least one p-contact region overlying the first handle substrate.
The device of claim 21, wherein the interface region is characterized by a defect density of less than about 10 6 cm⁻² to 10 7 cm⁻² within a matrix region between adjacent core regions.
The device of claim 21, wherein the gallium and nitrogen containing material is provided from a dot core substrate.
The device of claim 21, wherein the first surface region comprises a patterned, textured, or roughened surface structure.
The device of claim 21, wherein, the at least one core region comprises a plurality of core regions; and the plurality of core regions form a square array and a die is approximately square.
The device of claim 21, wherein, the at least one core region comprises a plurality of core regions; and the plurality of core regions form a hexagonal array and a die is approximately triangular.
The device of claim 21, further comprising: an adhesion layer overlying the first surface region; a second handle substrate comprising a first surface region and a second surface region, wherein, the first surface region of the second handle substrate is opposite the second surface region of the second handle substrate; and the second surface region of the second handle substrate overlies the adhesion layer; and at least one n-contact region overlying the first surface region of the second handle substrate.
The device of claim 21, further comprising at least one n-contact region overlying the first surface region.
The device of claim 21, wherein the first handle substrate comprises at least one through via or partial via.
The device of claim 21, wherein the first handle substrate is transparent or substantially transparent and comprises a down-converting light-emitting material.
A gallium and nitrogen containing device comprising: a gallium and nitrogen containing material, wherein, the gallium and nitrogen containing material comprises a first surface region, a second surface region, and at least one core region; the first surface region is opposite the second surface region; and the at least one core region extends between the first surface region and the second surface region and through the gallium and nitrogen containing material; an interface region overlying the second surface region; at least one n-type epitaxial growth region overlying the interface region; a core structure extending from the at least one core region through the at least one n-type epitaxial growth region; an active region overlying the at least one n-type epitaxial growth region; a p-type region overlying the active region; one or more via or street structures providing an electrical barrier between adjacent core regions and a matrix region between the adjacent core regions; at least one electrical contact region overlying a core region surrounded by a via or street structure; and at least one handle substrate.
The device of claim 31, wherein the interface region is characterized by a defect density of less than about 10 6 cm⁻² to 10 7 cm⁻² within the matrix region.
The device of claim 31, wherein the gallium and nitrogen containing material is provided from a dot core substrate.
The device of claim 31, wherein the first surface region comprises a patterned, textured, or roughened surface structure.
The device of claim 31, wherein, the at least one core region comprises a plurality of core regions; and the plurality of core regions form a square array and a die is approximately square.
The device of claim 31, wherein, the at least one core region comprises a plurality of core regions; and the plurality of core regions form a hexagonal array and a die is approximately triangular.
The device of claim 31, further comprising: an adhesion layer overlying the first surface region; and at least one p-contact region overlying the p-type region, wherein, the at least one handle substrate comprises a first surface region and a second surface region; the first surface region is opposite the second surface region; the second surface region overlies the adhesion layer; and the at least one electrical contact region comprises an n-type contact region.
The device of claim 31, further comprising: at least one n-contact region overlying the first surface region; and at least one p-contact region overlying the at least one core region; and wherein the at least one handle substrate comprises a first transparent or reflective handle substrate overlying the at least one p-type region.
The device of claim 31, wherein the at least one handle substrate comprises at least one through via or partial via.
The device of claim 31, wherein, 5 Application No.: 14/301,520 Preliminary Amendment dated the at least one handle substrate is transparent or substantially transparent; and the at least one handle substrate comprises a down-converting light-emitting material. 6
Layer stacks claimed or described, ordered top of device to substrate.
gallium and nitrogen containing LED device with transparent/reflective first handle substrate
Materials described outside the worked examples.
gallium and nitrogen containing material
gallium nitride
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
interface region defect density (matrix region between adjacent core regions) | — | gallium and nitrogen containing material |
Thickness | 390–700 nm |
Related documents with shared materials, methods, properties, or citations.
OPTO-ELECTRONIC AND ELECTRONIC DEVICES USING AN N-FACE OR M-PLANE GALLIUM NITRIDE SUBSTRATE PREPARED VIA AMMONOTHERMAL GROWTH
ANISOTROPIC STRAIN CONTROL IN SEMIPOLAR NITRIDE QUANTUM WELLS BY PARTIALLY OR FULLY RELAXED ALUMINUM INDIUM GALLIUM NITRIDE LAYERS WITH MISFIT DISLOCATIONS
Patent
Atlas literature
Patent
US 8,946,865Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Listing of Claims: 1-20. canceled
A gallium and nitrogen containing device comprising: a gallium and nitrogen containing material, wherein, the gallium and nitrogen containing material comprises a first surface region, a second surface region, and at least one core region; the first surface region is opposite the second surface region; and the at least one core region extends between the first surface region and the second surface region and through the gallium and nitrogen containing material; an interface region overlying the second surface region; at least one n-type epitaxial growth region overlying the interface region; a core structure extending from the at least one core region through the at least one n-type epitaxial growth region; an active region overlying the at least one n-type epitaxial growth region; a p-type region overlying the active region; a first handle substrate overlying the p-type region, wherein the first handle substrate is transparent, substantially transparent, or reflective; and at least one p-contact region overlying the first handle substrate.
The device of claim 21, wherein the interface region is characterized by a defect density of less than about 10 6 cm⁻² to 10 7 cm⁻² within a matrix region between adjacent core regions.
The device of claim 21, wherein the gallium and nitrogen containing material is provided from a dot core substrate.
The device of claim 21, wherein the first surface region comprises a patterned, textured, or roughened surface structure.
The device of claim 21, wherein, the at least one core region comprises a plurality of core regions; and the plurality of core regions form a square array and a die is approximately square.
The device of claim 21, wherein, the at least one core region comprises a plurality of core regions; and the plurality of core regions form a hexagonal array and a die is approximately triangular.
The device of claim 21, further comprising: an adhesion layer overlying the first surface region; a second handle substrate comprising a first surface region and a second surface region, wherein, the first surface region of the second handle substrate is opposite the second surface region of the second handle substrate; and the second surface region of the second handle substrate overlies the adhesion layer; and at least one n-contact region overlying the first surface region of the second handle substrate.
The device of claim 21, further comprising at least one n-contact region overlying the first surface region.
The device of claim 21, wherein the first handle substrate comprises at least one through via or partial via.
The device of claim 21, wherein the first handle substrate is transparent or substantially transparent and comprises a down-converting light-emitting material.
A gallium and nitrogen containing device comprising: a gallium and nitrogen containing material, wherein, the gallium and nitrogen containing material comprises a first surface region, a second surface region, and at least one core region; the first surface region is opposite the second surface region; and the at least one core region extends between the first surface region and the second surface region and through the gallium and nitrogen containing material; an interface region overlying the second surface region; at least one n-type epitaxial growth region overlying the interface region; a core structure extending from the at least one core region through the at least one n-type epitaxial growth region; an active region overlying the at least one n-type epitaxial growth region; a p-type region overlying the active region; one or more via or street structures providing an electrical barrier between adjacent core regions and a matrix region between the adjacent core regions; at least one electrical contact region overlying a core region surrounded by a via or street structure; and at least one handle substrate.
The device of claim 31, wherein the interface region is characterized by a defect density of less than about 10 6 cm⁻² to 10 7 cm⁻² within the matrix region.
The device of claim 31, wherein the gallium and nitrogen containing material is provided from a dot core substrate.
The device of claim 31, wherein the first surface region comprises a patterned, textured, or roughened surface structure.
The device of claim 31, wherein, the at least one core region comprises a plurality of core regions; and the plurality of core regions form a square array and a die is approximately square.
The device of claim 31, wherein, the at least one core region comprises a plurality of core regions; and the plurality of core regions form a hexagonal array and a die is approximately triangular.
The device of claim 31, further comprising: an adhesion layer overlying the first surface region; and at least one p-contact region overlying the p-type region, wherein, the at least one handle substrate comprises a first surface region and a second surface region; the first surface region is opposite the second surface region; the second surface region overlies the adhesion layer; and the at least one electrical contact region comprises an n-type contact region.
The device of claim 31, further comprising: at least one n-contact region overlying the first surface region; and at least one p-contact region overlying the at least one core region; and wherein the at least one handle substrate comprises a first transparent or reflective handle substrate overlying the at least one p-type region.
The device of claim 31, wherein the at least one handle substrate comprises at least one through via or partial via.
The device of claim 31, wherein, 5 Application No.: 14/301,520 Preliminary Amendment dated the at least one handle substrate is transparent or substantially transparent; and the at least one handle substrate comprises a down-converting light-emitting material. 6
Layer stacks claimed or described, ordered top of device to substrate.
gallium and nitrogen containing LED device with transparent/reflective first handle substrate
Materials described outside the worked examples.
gallium and nitrogen containing material
gallium nitride
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
interface region defect density (matrix region between adjacent core regions) | — | gallium and nitrogen containing material |
Thickness | 390–700 nm |
Related documents with shared materials, methods, properties, or citations.
OPTO-ELECTRONIC AND ELECTRONIC DEVICES USING AN N-FACE OR M-PLANE GALLIUM NITRIDE SUBSTRATE PREPARED VIA AMMONOTHERMAL GROWTH
ANISOTROPIC STRAIN CONTROL IN SEMIPOLAR NITRIDE QUANTUM WELLS BY PARTIALLY OR FULLY RELAXED ALUMINUM INDIUM GALLIUM NITRIDE LAYERS WITH MISFIT DISLOCATIONS
Patent
Atlas literature
Patent
US 8,946,865Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Listing of Claims: 1-20. canceled
A gallium and nitrogen containing device comprising: a gallium and nitrogen containing material, wherein, the gallium and nitrogen containing material comprises a first surface region, a second surface region, and at least one core region; the first surface region is opposite the second surface region; and the at least one core region extends between the first surface region and the second surface region and through the gallium and nitrogen containing material; an interface region overlying the second surface region; at least one n-type epitaxial growth region overlying the interface region; a core structure extending from the at least one core region through the at least one n-type epitaxial growth region; an active region overlying the at least one n-type epitaxial growth region; a p-type region overlying the active region; a first handle substrate overlying the p-type region, wherein the first handle substrate is transparent, substantially transparent, or reflective; and at least one p-contact region overlying the first handle substrate.
The device of claim 21, wherein the interface region is characterized by a defect density of less than about 10 6 cm⁻² to 10 7 cm⁻² within a matrix region between adjacent core regions.
The device of claim 21, wherein the gallium and nitrogen containing material is provided from a dot core substrate.
The device of claim 21, wherein the first surface region comprises a patterned, textured, or roughened surface structure.
The device of claim 21, wherein, the at least one core region comprises a plurality of core regions; and the plurality of core regions form a square array and a die is approximately square.
The device of claim 21, wherein, the at least one core region comprises a plurality of core regions; and the plurality of core regions form a hexagonal array and a die is approximately triangular.
The device of claim 21, further comprising: an adhesion layer overlying the first surface region; a second handle substrate comprising a first surface region and a second surface region, wherein, the first surface region of the second handle substrate is opposite the second surface region of the second handle substrate; and the second surface region of the second handle substrate overlies the adhesion layer; and at least one n-contact region overlying the first surface region of the second handle substrate.
The device of claim 21, further comprising at least one n-contact region overlying the first surface region.
The device of claim 21, wherein the first handle substrate comprises at least one through via or partial via.
The device of claim 21, wherein the first handle substrate is transparent or substantially transparent and comprises a down-converting light-emitting material.
A gallium and nitrogen containing device comprising: a gallium and nitrogen containing material, wherein, the gallium and nitrogen containing material comprises a first surface region, a second surface region, and at least one core region; the first surface region is opposite the second surface region; and the at least one core region extends between the first surface region and the second surface region and through the gallium and nitrogen containing material; an interface region overlying the second surface region; at least one n-type epitaxial growth region overlying the interface region; a core structure extending from the at least one core region through the at least one n-type epitaxial growth region; an active region overlying the at least one n-type epitaxial growth region; a p-type region overlying the active region; one or more via or street structures providing an electrical barrier between adjacent core regions and a matrix region between the adjacent core regions; at least one electrical contact region overlying a core region surrounded by a via or street structure; and at least one handle substrate.
The device of claim 31, wherein the interface region is characterized by a defect density of less than about 10 6 cm⁻² to 10 7 cm⁻² within the matrix region.
The device of claim 31, wherein the gallium and nitrogen containing material is provided from a dot core substrate.
The device of claim 31, wherein the first surface region comprises a patterned, textured, or roughened surface structure.
The device of claim 31, wherein, the at least one core region comprises a plurality of core regions; and the plurality of core regions form a square array and a die is approximately square.
The device of claim 31, wherein, the at least one core region comprises a plurality of core regions; and the plurality of core regions form a hexagonal array and a die is approximately triangular.
The device of claim 31, further comprising: an adhesion layer overlying the first surface region; and at least one p-contact region overlying the p-type region, wherein, the at least one handle substrate comprises a first surface region and a second surface region; the first surface region is opposite the second surface region; the second surface region overlies the adhesion layer; and the at least one electrical contact region comprises an n-type contact region.
The device of claim 31, further comprising: at least one n-contact region overlying the first surface region; and at least one p-contact region overlying the at least one core region; and wherein the at least one handle substrate comprises a first transparent or reflective handle substrate overlying the at least one p-type region.
The device of claim 31, wherein the at least one handle substrate comprises at least one through via or partial via.
The device of claim 31, wherein, 5 Application No.: 14/301,520 Preliminary Amendment dated the at least one handle substrate is transparent or substantially transparent; and the at least one handle substrate comprises a down-converting light-emitting material. 6
Layer stacks claimed or described, ordered top of device to substrate.
gallium and nitrogen containing LED device with transparent/reflective first handle substrate
Materials described outside the worked examples.
gallium and nitrogen containing material
gallium nitride
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
interface region defect density (matrix region between adjacent core regions) | — | gallium and nitrogen containing material |
Thickness | 390–700 nm |
Related documents with shared materials, methods, properties, or citations.
OPTO-ELECTRONIC AND ELECTRONIC DEVICES USING AN N-FACE OR M-PLANE GALLIUM NITRIDE SUBSTRATE PREPARED VIA AMMONOTHERMAL GROWTH
ANISOTROPIC STRAIN CONTROL IN SEMIPOLAR NITRIDE QUANTUM WELLS BY PARTIALLY OR FULLY RELAXED ALUMINUM INDIUM GALLIUM NITRIDE LAYERS WITH MISFIT DISLOCATIONS
gallium and nitrogen containing LED device with via/street electrical isolation structures
aluminum nitride
AlN
indium nitride
InN
indium gallium nitride
InGaN
aluminum gallium nitride
AlGaN
aluminum indium gallium nitride
AlInGaN
down-converting light-emitting material
| — |
Thickness | 700–3077 nm | — |
Thickness | 3333–6667 nm | — |
Thickness | 100000–100000000 nm | — |
Thickness | 1–10 mm | — |
Thickness | 1–10000 nm | — |
Thickness | 10–1000 nm | — |
Duration | 300–36000 s | — |
Thickness | 1020 -3 cm | — |
Temperature | 0.000001 K | — |
Thickness | ≤ 10000000 cm | — |
Thickness | ≤ 1000000 cm | — |
Thickness | ≤ 10 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 50 cm | — |
Thickness | ≤ 5 cm | — |
Thickness | ≤ 2 cm | — |
Thickness | ≤ 0.3 cm | — |
Thickness | ≤ 1 µm | — |
Thickness | ≤ 0.5 µm | — |
Thickness | ≤ 0.2 µm | — |
Thickness | ≤ 0.1 µm | — |
Thickness | ≤ 0.05 µm | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 2 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≤ 0.2 nm | — |
Thickness | ≤ 0.1 nm | — |
Thickness | ≤ 0.05 nm | — |
Thickness | ≤ 0.3 nm | — |
Pressure | ≤ 10 pa | — |
Thickness | ≥ 3 mm | — |
Thickness | ≥ 0.5 mm | — |
Thickness | ≥ 1 mm | — |
Thickness | ≥ 2 mm | — |
Thickness | ≥ 5 mm | — |
Thickness | ≥ 10 mm | — |
Thickness | ≥ 15 mm | — |
Thickness | ≥ 20 mm | — |
Thickness | ≥ 25 mm | — |
Thickness | ≥ 35 mm | — |
Thickness | ≥ 50 mm | — |
Thickness | ≥ 75 mm | — |
Thickness | ≥ 150 mm | — |
Thickness | ≥ 200 mm | — |
Thickness | ≥ 10 µm | — |
Voltage | ≥ 20 V | — |
Voltage | ≥ 1 V | — |
gallium and nitrogen containing LED device with via/street electrical isolation structures
aluminum nitride
AlN
indium nitride
InN
indium gallium nitride
InGaN
aluminum gallium nitride
AlGaN
aluminum indium gallium nitride
AlInGaN
down-converting light-emitting material
| — |
Thickness | 700–3077 nm | — |
Thickness | 3333–6667 nm | — |
Thickness | 100000–100000000 nm | — |
Thickness | 1–10 mm | — |
Thickness | 1–10000 nm | — |
Thickness | 10–1000 nm | — |
Duration | 300–36000 s | — |
Thickness | 1020 -3 cm | — |
Temperature | 0.000001 K | — |
Thickness | ≤ 10000000 cm | — |
Thickness | ≤ 1000000 cm | — |
Thickness | ≤ 10 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 50 cm | — |
Thickness | ≤ 5 cm | — |
Thickness | ≤ 2 cm | — |
Thickness | ≤ 0.3 cm | — |
Thickness | ≤ 1 µm | — |
Thickness | ≤ 0.5 µm | — |
Thickness | ≤ 0.2 µm | — |
Thickness | ≤ 0.1 µm | — |
Thickness | ≤ 0.05 µm | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 2 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≤ 0.2 nm | — |
Thickness | ≤ 0.1 nm | — |
Thickness | ≤ 0.05 nm | — |
Thickness | ≤ 0.3 nm | — |
Pressure | ≤ 10 pa | — |
Thickness | ≥ 3 mm | — |
Thickness | ≥ 0.5 mm | — |
Thickness | ≥ 1 mm | — |
Thickness | ≥ 2 mm | — |
Thickness | ≥ 5 mm | — |
Thickness | ≥ 10 mm | — |
Thickness | ≥ 15 mm | — |
Thickness | ≥ 20 mm | — |
Thickness | ≥ 25 mm | — |
Thickness | ≥ 35 mm | — |
Thickness | ≥ 50 mm | — |
Thickness | ≥ 75 mm | — |
Thickness | ≥ 150 mm | — |
Thickness | ≥ 200 mm | — |
Thickness | ≥ 10 µm | — |
Voltage | ≥ 20 V | — |
Voltage | ≥ 1 V | — |
gallium and nitrogen containing LED device with via/street electrical isolation structures
aluminum nitride
AlN
indium nitride
InN
indium gallium nitride
InGaN
aluminum gallium nitride
AlGaN
aluminum indium gallium nitride
AlInGaN
down-converting light-emitting material
| — |
Thickness | 700–3077 nm | — |
Thickness | 3333–6667 nm | — |
Thickness | 100000–100000000 nm | — |
Thickness | 1–10 mm | — |
Thickness | 1–10000 nm | — |
Thickness | 10–1000 nm | — |
Duration | 300–36000 s | — |
Thickness | 1020 -3 cm | — |
Temperature | 0.000001 K | — |
Thickness | ≤ 10000000 cm | — |
Thickness | ≤ 1000000 cm | — |
Thickness | ≤ 10 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 50 cm | — |
Thickness | ≤ 5 cm | — |
Thickness | ≤ 2 cm | — |
Thickness | ≤ 0.3 cm | — |
Thickness | ≤ 1 µm | — |
Thickness | ≤ 0.5 µm | — |
Thickness | ≤ 0.2 µm | — |
Thickness | ≤ 0.1 µm | — |
Thickness | ≤ 0.05 µm | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 2 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≤ 0.2 nm | — |
Thickness | ≤ 0.1 nm | — |
Thickness | ≤ 0.05 nm | — |
Thickness | ≤ 0.3 nm | — |
Pressure | ≤ 10 pa | — |
Thickness | ≥ 3 mm | — |
Thickness | ≥ 0.5 mm | — |
Thickness | ≥ 1 mm | — |
Thickness | ≥ 2 mm | — |
Thickness | ≥ 5 mm | — |
Thickness | ≥ 10 mm | — |
Thickness | ≥ 15 mm | — |
Thickness | ≥ 20 mm | — |
Thickness | ≥ 25 mm | — |
Thickness | ≥ 35 mm | — |
Thickness | ≥ 50 mm | — |
Thickness | ≥ 75 mm | — |
Thickness | ≥ 150 mm | — |
Thickness | ≥ 200 mm | — |
Thickness | ≥ 10 µm | — |
Voltage | ≥ 20 V | — |
Voltage | ≥ 1 V | — |
gallium and nitrogen containing LED device with via/street electrical isolation structures
aluminum nitride
AlN
indium nitride
InN
indium gallium nitride
InGaN
aluminum gallium nitride
AlGaN
aluminum indium gallium nitride
AlInGaN
down-converting light-emitting material
| — |
Thickness | 700–3077 nm | — |
Thickness | 3333–6667 nm | — |
Thickness | 100000–100000000 nm | — |
Thickness | 1–10 mm | — |
Thickness | 1–10000 nm | — |
Thickness | 10–1000 nm | — |
Duration | 300–36000 s | — |
Thickness | 1020 -3 cm | — |
Temperature | 0.000001 K | — |
Thickness | ≤ 10000000 cm | — |
Thickness | ≤ 1000000 cm | — |
Thickness | ≤ 10 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 50 cm | — |
Thickness | ≤ 5 cm | — |
Thickness | ≤ 2 cm | — |
Thickness | ≤ 0.3 cm | — |
Thickness | ≤ 1 µm | — |
Thickness | ≤ 0.5 µm | — |
Thickness | ≤ 0.2 µm | — |
Thickness | ≤ 0.1 µm | — |
Thickness | ≤ 0.05 µm | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 2 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≤ 0.2 nm | — |
Thickness | ≤ 0.1 nm | — |
Thickness | ≤ 0.05 nm | — |
Thickness | ≤ 0.3 nm | — |
Pressure | ≤ 10 pa | — |
Thickness | ≥ 3 mm | — |
Thickness | ≥ 0.5 mm | — |
Thickness | ≥ 1 mm | — |
Thickness | ≥ 2 mm | — |
Thickness | ≥ 5 mm | — |
Thickness | ≥ 10 mm | — |
Thickness | ≥ 15 mm | — |
Thickness | ≥ 20 mm | — |
Thickness | ≥ 25 mm | — |
Thickness | ≥ 35 mm | — |
Thickness | ≥ 50 mm | — |
Thickness | ≥ 75 mm | — |
Thickness | ≥ 150 mm | — |
Thickness | ≥ 200 mm | — |
Thickness | ≥ 10 µm | — |
Voltage | ≥ 20 V | — |
Voltage | ≥ 1 V | — |