(('urrently amended) The Ga N based semiconductor light em i t tin g device according to claim 1. wherein: th e polycrystalline nitride b a sed semiconductor dis c ontinuous uneven- ayer is formed by thermally treating an amorphous nitride based s cm iconduclor layer.

4, (Previou sl y pres e nt e d) T he G aN based semiconductor light emitting device according to claim 1. wherein: the active layer includes a multiquantum well structure that includes a plur a lity of InGaN w ell layers.

(C urrently am e nd e d) T he G a N bas e d s e miconductor light emitting d e vic e a ccording to claim 1. w herein the poly c rystallin e nitrid e based semiconductor discontinuo u s lay e r includes at least one o l' polycrystalline AI N. polycrystal ine Al(aN, polycrystalline G aN, polycrystalline InG aN and polycrystalline InN.

(Pr e vio us ly presen t ed) The GN bas ed semicnonductor ligh t emi t ting device accor d ing to claim 1 6. wh e r e in the n-type la yer includes: an n-typ e (aN:Si-doped cladding l ay e r.

'T he (i aN based semiconductor light emitting device according to claim 5, wherein: the active layer in c ludes a multiquantum well structure that includes a plurality o f InGa N wel l layers.

1 1. The GaN based semiconductor light emitting device according to claim 10, w her e in each o f the plurality o f unev e n inG aN well layers is PAGE 4 8' RCVD AT 10 127/20061:49:52 PM [E aste m Daylight Time]' SVR:USPT O.EF XRF -517' DNIS:2731 709' CSID: 7 03433 00 96 " DURATION (mm -ss):0 1.36 OCT 27,2006 0 1:45P 7034330096 page 5 S e rial No. 10/926. 398 4 Docket No. TGF -04039 (I lIR.I 14) unevenly f o rm e d according to the polycrystalline nitride b a s ed semiconductor dis continuousi uneve itlayer.

(Currentl y am e nd e d) 'T he G aN based semicunduclur light e m it t ing device according to claim 10, wherein each of the plurality of uneven G a N barrier layers is unevenly form ed according to the polycrystalline nitride based semiconductor d iscontinuous WHevest -layer.

21. The G aN based semiconductor light e mi t ting device ac c ordin g to claim 16, w he r e i n the p-type layer i n cludes: an Mg-doped p-type A IG aN c ladding layer disposed on t he active layer.

23. T he Ga N hased s e miconduc t or light he uneven active-lay e r includes a plurality o f ly disposed with a plurality of uneven 6 aN barrier A l GaN cladding layer disposed on the active emitting device according to claim 16, wherein t uneven InGa N well layers which a re alternat e layers.

(Curr ent ly amended) T he G aN based semiconductor light enitling device according to claim 17, wherein each ofthe plurality of uneven InG aN well layers is unevenly fo rm e d according to the polycrystalline nitride based semiconductor disc o n t inu o us e aeve-laver.

T he G aN based semiconductor l ight emitting device according to claim 17, wherein each o f the plurality of uneven U aN barrier lay e rs is unevenly flunined according to the polycrystalline nitride b ased semiconductor d iscontinuous i- eve n-lav er.

(('urrently amended) The Ga N based semiconductor light em i t tin g device according to claim 1. wherein: th e polycrystalline nitride b a sed semiconductor dis c ontinuous uneven- ayer is formed by thermally treating an amorphous nitride based s cm iconduclor layer.

4, (Previou sl y pres e nt e d) T he G aN based semiconductor light emitting device according to claim 1. wherein: the active layer includes a multiquantum well structure that includes a plur a lity of InGaN w ell layers.

(C urrently am e nd e d) T he G a N bas e d s e miconductor light emitting d e vic e a ccording to claim 1. w herein the poly c rystallin e nitrid e based semiconductor discontinuo u s lay e r includes at least one o l' polycrystalline AI N. polycrystal ine Al(aN, polycrystalline G aN, polycrystalline InG aN and polycrystalline InN.

(Pr e vio us ly presen t ed) The GN bas ed semicnonductor ligh t emi t ting device accor d ing to claim 1 6. wh e r e in the n-type la yer includes: an n-typ e (aN:Si-doped cladding l ay e r.

'T he (i aN based semiconductor light emitting device according to claim 5, wherein: the active layer in c ludes a multiquantum well structure that includes a plurality o f InGa N wel l layers.

1 1. The GaN based semiconductor light emitting device according to claim 10, w her e in each o f the plurality o f unev e n inG aN well layers is PAGE 4 8' RCVD AT 10 127/20061:49:52 PM [E aste m Daylight Time]' SVR:USPT O.EF XRF -517' DNIS:2731 709' CSID: 7 03433 00 96 " DURATION (mm -ss):0 1.36 OCT 27,2006 0 1:45P 7034330096 page 5 S e rial No. 10/926. 398 4 Docket No. TGF -04039 (I lIR.I 14) unevenly f o rm e d according to the polycrystalline nitride b a s ed semiconductor dis continuousi uneve itlayer.

(Currentl y am e nd e d) 'T he G aN based semicunduclur light e m it t ing device according to claim 10, wherein each of the plurality of uneven G a N barrier layers is unevenly form ed according to the polycrystalline nitride based semiconductor d iscontinuous WHevest -layer.

21. The G aN based semiconductor light e mi t ting device ac c ordin g to claim 16, w he r e i n the p-type layer i n cludes: an Mg-doped p-type A IG aN c ladding layer disposed on t he active layer.

23. T he Ga N hased s e miconduc t or light he uneven active-lay e r includes a plurality o f ly disposed with a plurality of uneven 6 aN barrier A l GaN cladding layer disposed on the active emitting device according to claim 16, wherein t uneven InGa N well layers which a re alternat e layers.

(Curr ent ly amended) T he G aN based semiconductor light enitling device according to claim 17, wherein each ofthe plurality of uneven InG aN well layers is unevenly fo rm e d according to the polycrystalline nitride based semiconductor disc o n t inu o us e aeve-laver.

T he G aN based semiconductor l ight emitting device according to claim 17, wherein each o f the plurality of uneven U aN barrier lay e rs is unevenly flunined according to the polycrystalline nitride b ased semiconductor d iscontinuous i- eve n-lav er.

(('urrently amended) The Ga N based semiconductor light em i t tin g device according to claim 1. wherein: th e polycrystalline nitride b a sed semiconductor dis c ontinuous uneven- ayer is formed by thermally treating an amorphous nitride based s cm iconduclor layer.

4, (Previou sl y pres e nt e d) T he G aN based semiconductor light emitting device according to claim 1. wherein: the active layer includes a multiquantum well structure that includes a plur a lity of InGaN w ell layers.

(C urrently am e nd e d) T he G a N bas e d s e miconductor light emitting d e vic e a ccording to claim 1. w herein the poly c rystallin e nitrid e based semiconductor discontinuo u s lay e r includes at least one o l' polycrystalline AI N. polycrystal ine Al(aN, polycrystalline G aN, polycrystalline InG aN and polycrystalline InN.

(Pr e vio us ly presen t ed) The GN bas ed semicnonductor ligh t emi t ting device accor d ing to claim 1 6. wh e r e in the n-type la yer includes: an n-typ e (aN:Si-doped cladding l ay e r.

'T he (i aN based semiconductor light emitting device according to claim 5, wherein: the active layer in c ludes a multiquantum well structure that includes a plurality o f InGa N wel l layers.

1 1. The GaN based semiconductor light emitting device according to claim 10, w her e in each o f the plurality o f unev e n inG aN well layers is PAGE 4 8' RCVD AT 10 127/20061:49:52 PM [E aste m Daylight Time]' SVR:USPT O.EF XRF -517' DNIS:2731 709' CSID: 7 03433 00 96 " DURATION (mm -ss):0 1.36 OCT 27,2006 0 1:45P 7034330096 page 5 S e rial No. 10/926. 398 4 Docket No. TGF -04039 (I lIR.I 14) unevenly f o rm e d according to the polycrystalline nitride b a s ed semiconductor dis continuousi uneve itlayer.

(Currentl y am e nd e d) 'T he G aN based semicunduclur light e m it t ing device according to claim 10, wherein each of the plurality of uneven G a N barrier layers is unevenly form ed according to the polycrystalline nitride based semiconductor d iscontinuous WHevest -layer.

21. The G aN based semiconductor light e mi t ting device ac c ordin g to claim 16, w he r e i n the p-type layer i n cludes: an Mg-doped p-type A IG aN c ladding layer disposed on t he active layer.

23. T he Ga N hased s e miconduc t or light he uneven active-lay e r includes a plurality o f ly disposed with a plurality of uneven 6 aN barrier A l GaN cladding layer disposed on the active emitting device according to claim 16, wherein t uneven InGa N well layers which a re alternat e layers.

(Curr ent ly amended) T he G aN based semiconductor light enitling device according to claim 17, wherein each ofthe plurality of uneven InG aN well layers is unevenly fo rm e d according to the polycrystalline nitride based semiconductor disc o n t inu o us e aeve-laver.

T he G aN based semiconductor l ight emitting device according to claim 17, wherein each o f the plurality of uneven U aN barrier lay e rs is unevenly flunined according to the polycrystalline nitride b ased semiconductor d iscontinuous i- eve n-lav er.

(('urrently amended) The Ga N based semiconductor light em i t tin g device according to claim 1. wherein: th e polycrystalline nitride b a sed semiconductor dis c ontinuous uneven- ayer is formed by thermally treating an amorphous nitride based s cm iconduclor layer.

4, (Previou sl y pres e nt e d) T he G aN based semiconductor light emitting device according to claim 1. wherein: the active layer includes a multiquantum well structure that includes a plur a lity of InGaN w ell layers.

(C urrently am e nd e d) T he G a N bas e d s e miconductor light emitting d e vic e a ccording to claim 1. w herein the poly c rystallin e nitrid e based semiconductor discontinuo u s lay e r includes at least one o l' polycrystalline AI N. polycrystal ine Al(aN, polycrystalline G aN, polycrystalline InG aN and polycrystalline InN.

(Pr e vio us ly presen t ed) The GN bas ed semicnonductor ligh t emi t ting device accor d ing to claim 1 6. wh e r e in the n-type la yer includes: an n-typ e (aN:Si-doped cladding l ay e r.

'T he (i aN based semiconductor light emitting device according to claim 5, wherein: the active layer in c ludes a multiquantum well structure that includes a plurality o f InGa N wel l layers.

1 1. The GaN based semiconductor light emitting device according to claim 10, w her e in each o f the plurality o f unev e n inG aN well layers is PAGE 4 8' RCVD AT 10 127/20061:49:52 PM [E aste m Daylight Time]' SVR:USPT O.EF XRF -517' DNIS:2731 709' CSID: 7 03433 00 96 " DURATION (mm -ss):0 1.36 OCT 27,2006 0 1:45P 7034330096 page 5 S e rial No. 10/926. 398 4 Docket No. TGF -04039 (I lIR.I 14) unevenly f o rm e d according to the polycrystalline nitride b a s ed semiconductor dis continuousi uneve itlayer.

(Currentl y am e nd e d) 'T he G aN based semicunduclur light e m it t ing device according to claim 10, wherein each of the plurality of uneven G a N barrier layers is unevenly form ed according to the polycrystalline nitride based semiconductor d iscontinuous WHevest -layer.

21. The G aN based semiconductor light e mi t ting device ac c ordin g to claim 16, w he r e i n the p-type layer i n cludes: an Mg-doped p-type A IG aN c ladding layer disposed on t he active layer.

23. T he Ga N hased s e miconduc t or light he uneven active-lay e r includes a plurality o f ly disposed with a plurality of uneven 6 aN barrier A l GaN cladding layer disposed on the active emitting device according to claim 16, wherein t uneven InGa N well layers which a re alternat e layers.

(Curr ent ly amended) T he G aN based semiconductor light enitling device according to claim 17, wherein each ofthe plurality of uneven InG aN well layers is unevenly fo rm e d according to the polycrystalline nitride based semiconductor disc o n t inu o us e aeve-laver.

T he G aN based semiconductor l ight emitting device according to claim 17, wherein each o f the plurality of uneven U aN barrier lay e rs is unevenly flunined according to the polycrystalline nitride b ased semiconductor d iscontinuous i- eve n-lav er.