Patent
US 11,060,185Graphene Synthesis
Dong Han Seo, Shafique Pineda, Zhao Jun Han, Kostyantyn Ostrikov
Commonwealth Scientific and Industrial Research Organisation·23 February 2017·US
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Patent
Atlas literature
Patent
US 11,060,185Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of preparing a deposited graphene in the form of a continuous film comprising the steps of: sealing a metal substrate and a carbon source in an ambient environment at ambient temperature to create a sealed ambient environment comprising a sealed ambient atmosphere; heating the sealed ambient environment to a temperature which produces carbon vapour from the carbon source such that the carbon vapour comes into contact with a surface of the metal substrate-maintaining the temperature for a time sufficient to form a graphene lattice and then cooling the metal substrate at a controlled rate to form a deposited graphene continuous film on the surface of the metal substrate that contacts the carbon vapour-and wherein the carbon source is a liquid or solid biomass, is derived from a biomass, or is a purified biomass; wherein the entire carbon source is not in contact with the metal substrate; wherein the method is free from the use of purge or feedstock gases; wherein the sealed ambient atmosphere consists of air at atmospheric pressure or a vacuum; wherein the temperature which produces the carbon vapour from the carbon source is in the range of 650 ° C to 900 °C; and wherein cooling the metal substrate at a controlled rate controls thickness of the deposited graphene continuous film. Currently amended
The method according to claim 1 wherein the metal substrate is a transition metal substrate. Previously presented
The method according to claim 1 wherein the metal substrate is nickel or copper. Previously presented
The method according to claim 1 wherein the carbon source is a liquid. Previously presented
The method according to claim 1 wherein the carbon source is soybean oil. Previously presented
The method according to claim 1 wherein a ratio of carbon source to surface area of the metal substrate is 0.01-0.03 mL/cm 2. Previously presented
The method according to claim 1 wherein the metal substrate and carbon source are both located in one heating zone. Previously presented
The method according to claim 1 wherein the sealed ambient environment is contained in an inert container. Previously presented
The method according to claim 1 wherein the sealed ambient environment is a quartz, glass or other dielectric heat resistant container. Previously presented
The method according to claim 1, wherein the temperature sufficient to form a- the graphene lattice is maintained for 3-15 minutes. Currently amended
The method according to claim 1 wherein the deposited graphene is in the form of 20-40 layers. Previously presented
The method according to claim 1 wherein the deposited graphene is in the form of >40 layers. Previously presented
The method according to claim 1 wherein the substrate is cooled at a controlled rate to segregate the graphene lattice from the metal substrate. Previously presented
The method according to claim 1 wherein the rate of 10-100 ° C/minute. Previously presented
The method according to claim 1 further substrate. Previously presented
Response to Office Action dated Atty. Docket No. 13106-66 (88868USP00) Canceled
Canceled
Canceled
13-14. Response to Office Action dated Atty. Docket No. 13106-66 (88868USP00) Canceled
Canceled
Canceled
Canceled
Canceled
30-32. Canceled
Canceled
34-38. Canceled
Canceled substrate is cooled to ambient temperature at a comprising the step of decoupling graphene from the
Materials described outside the worked examples.
graphene (continuous film)
C
biomass carbon source (liquid or solid)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
sheet resistance of high quality graphene | 200 ohm/sq | C |
optical transmittance of very thin graphene film (1-3 layers) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,060,185Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of preparing a deposited graphene in the form of a continuous film comprising the steps of: sealing a metal substrate and a carbon source in an ambient environment at ambient temperature to create a sealed ambient environment comprising a sealed ambient atmosphere; heating the sealed ambient environment to a temperature which produces carbon vapour from the carbon source such that the carbon vapour comes into contact with a surface of the metal substrate-maintaining the temperature for a time sufficient to form a graphene lattice and then cooling the metal substrate at a controlled rate to form a deposited graphene continuous film on the surface of the metal substrate that contacts the carbon vapour-and wherein the carbon source is a liquid or solid biomass, is derived from a biomass, or is a purified biomass; wherein the entire carbon source is not in contact with the metal substrate; wherein the method is free from the use of purge or feedstock gases; wherein the sealed ambient atmosphere consists of air at atmospheric pressure or a vacuum; wherein the temperature which produces the carbon vapour from the carbon source is in the range of 650 ° C to 900 °C; and wherein cooling the metal substrate at a controlled rate controls thickness of the deposited graphene continuous film. Currently amended
The method according to claim 1 wherein the metal substrate is a transition metal substrate. Previously presented
The method according to claim 1 wherein the metal substrate is nickel or copper. Previously presented
The method according to claim 1 wherein the carbon source is a liquid. Previously presented
The method according to claim 1 wherein the carbon source is soybean oil. Previously presented
The method according to claim 1 wherein a ratio of carbon source to surface area of the metal substrate is 0.01-0.03 mL/cm 2. Previously presented
The method according to claim 1 wherein the metal substrate and carbon source are both located in one heating zone. Previously presented
The method according to claim 1 wherein the sealed ambient environment is contained in an inert container. Previously presented
The method according to claim 1 wherein the sealed ambient environment is a quartz, glass or other dielectric heat resistant container. Previously presented
The method according to claim 1, wherein the temperature sufficient to form a- the graphene lattice is maintained for 3-15 minutes. Currently amended
The method according to claim 1 wherein the deposited graphene is in the form of 20-40 layers. Previously presented
The method according to claim 1 wherein the deposited graphene is in the form of >40 layers. Previously presented
The method according to claim 1 wherein the substrate is cooled at a controlled rate to segregate the graphene lattice from the metal substrate. Previously presented
The method according to claim 1 wherein the rate of 10-100 ° C/minute. Previously presented
The method according to claim 1 further substrate. Previously presented
Response to Office Action dated Atty. Docket No. 13106-66 (88868USP00) Canceled
Canceled
Canceled
13-14. Response to Office Action dated Atty. Docket No. 13106-66 (88868USP00) Canceled
Canceled
Canceled
Canceled
Canceled
30-32. Canceled
Canceled
34-38. Canceled
Canceled substrate is cooled to ambient temperature at a comprising the step of decoupling graphene from the
Materials described outside the worked examples.
graphene (continuous film)
C
biomass carbon source (liquid or solid)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
sheet resistance of high quality graphene | 200 ohm/sq | C |
optical transmittance of very thin graphene film (1-3 layers) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,060,185Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of preparing a deposited graphene in the form of a continuous film comprising the steps of: sealing a metal substrate and a carbon source in an ambient environment at ambient temperature to create a sealed ambient environment comprising a sealed ambient atmosphere; heating the sealed ambient environment to a temperature which produces carbon vapour from the carbon source such that the carbon vapour comes into contact with a surface of the metal substrate-maintaining the temperature for a time sufficient to form a graphene lattice and then cooling the metal substrate at a controlled rate to form a deposited graphene continuous film on the surface of the metal substrate that contacts the carbon vapour-and wherein the carbon source is a liquid or solid biomass, is derived from a biomass, or is a purified biomass; wherein the entire carbon source is not in contact with the metal substrate; wherein the method is free from the use of purge or feedstock gases; wherein the sealed ambient atmosphere consists of air at atmospheric pressure or a vacuum; wherein the temperature which produces the carbon vapour from the carbon source is in the range of 650 ° C to 900 °C; and wherein cooling the metal substrate at a controlled rate controls thickness of the deposited graphene continuous film. Currently amended
The method according to claim 1 wherein the metal substrate is a transition metal substrate. Previously presented
The method according to claim 1 wherein the metal substrate is nickel or copper. Previously presented
The method according to claim 1 wherein the carbon source is a liquid. Previously presented
The method according to claim 1 wherein the carbon source is soybean oil. Previously presented
The method according to claim 1 wherein a ratio of carbon source to surface area of the metal substrate is 0.01-0.03 mL/cm 2. Previously presented
The method according to claim 1 wherein the metal substrate and carbon source are both located in one heating zone. Previously presented
The method according to claim 1 wherein the sealed ambient environment is contained in an inert container. Previously presented
The method according to claim 1 wherein the sealed ambient environment is a quartz, glass or other dielectric heat resistant container. Previously presented
The method according to claim 1, wherein the temperature sufficient to form a- the graphene lattice is maintained for 3-15 minutes. Currently amended
The method according to claim 1 wherein the deposited graphene is in the form of 20-40 layers. Previously presented
The method according to claim 1 wherein the deposited graphene is in the form of >40 layers. Previously presented
The method according to claim 1 wherein the substrate is cooled at a controlled rate to segregate the graphene lattice from the metal substrate. Previously presented
The method according to claim 1 wherein the rate of 10-100 ° C/minute. Previously presented
The method according to claim 1 further substrate. Previously presented
Response to Office Action dated Atty. Docket No. 13106-66 (88868USP00) Canceled
Canceled
Canceled
13-14. Response to Office Action dated Atty. Docket No. 13106-66 (88868USP00) Canceled
Canceled
Canceled
Canceled
Canceled
30-32. Canceled
Canceled
34-38. Canceled
Canceled substrate is cooled to ambient temperature at a comprising the step of decoupling graphene from the
Materials described outside the worked examples.
graphene (continuous film)
C
biomass carbon source (liquid or solid)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
sheet resistance of high quality graphene | 200 ohm/sq | C |
optical transmittance of very thin graphene film (1-3 layers) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,060,185Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of preparing a deposited graphene in the form of a continuous film comprising the steps of: sealing a metal substrate and a carbon source in an ambient environment at ambient temperature to create a sealed ambient environment comprising a sealed ambient atmosphere; heating the sealed ambient environment to a temperature which produces carbon vapour from the carbon source such that the carbon vapour comes into contact with a surface of the metal substrate-maintaining the temperature for a time sufficient to form a graphene lattice and then cooling the metal substrate at a controlled rate to form a deposited graphene continuous film on the surface of the metal substrate that contacts the carbon vapour-and wherein the carbon source is a liquid or solid biomass, is derived from a biomass, or is a purified biomass; wherein the entire carbon source is not in contact with the metal substrate; wherein the method is free from the use of purge or feedstock gases; wherein the sealed ambient atmosphere consists of air at atmospheric pressure or a vacuum; wherein the temperature which produces the carbon vapour from the carbon source is in the range of 650 ° C to 900 °C; and wherein cooling the metal substrate at a controlled rate controls thickness of the deposited graphene continuous film. Currently amended
The method according to claim 1 wherein the metal substrate is a transition metal substrate. Previously presented
The method according to claim 1 wherein the metal substrate is nickel or copper. Previously presented
The method according to claim 1 wherein the carbon source is a liquid. Previously presented
The method according to claim 1 wherein the carbon source is soybean oil. Previously presented
The method according to claim 1 wherein a ratio of carbon source to surface area of the metal substrate is 0.01-0.03 mL/cm 2. Previously presented
The method according to claim 1 wherein the metal substrate and carbon source are both located in one heating zone. Previously presented
The method according to claim 1 wherein the sealed ambient environment is contained in an inert container. Previously presented
The method according to claim 1 wherein the sealed ambient environment is a quartz, glass or other dielectric heat resistant container. Previously presented
The method according to claim 1, wherein the temperature sufficient to form a- the graphene lattice is maintained for 3-15 minutes. Currently amended
The method according to claim 1 wherein the deposited graphene is in the form of 20-40 layers. Previously presented
The method according to claim 1 wherein the deposited graphene is in the form of >40 layers. Previously presented
The method according to claim 1 wherein the substrate is cooled at a controlled rate to segregate the graphene lattice from the metal substrate. Previously presented
The method according to claim 1 wherein the rate of 10-100 ° C/minute. Previously presented
The method according to claim 1 further substrate. Previously presented
Response to Office Action dated Atty. Docket No. 13106-66 (88868USP00) Canceled
Canceled
Canceled
13-14. Response to Office Action dated Atty. Docket No. 13106-66 (88868USP00) Canceled
Canceled
Canceled
Canceled
Canceled
30-32. Canceled
Canceled
34-38. Canceled
Canceled substrate is cooled to ambient temperature at a comprising the step of decoupling graphene from the
Materials described outside the worked examples.
graphene (continuous film)
C
biomass carbon source (liquid or solid)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
sheet resistance of high quality graphene | 200 ohm/sq | C |
optical transmittance of very thin graphene film (1-3 layers) |
Related documents with shared materials, methods, properties, or citations.
transition metal substrate
nickel substrate
Ni
copper substrate
Cu
soybean oil
| 97 % |
C |
Thickness | 300–800 nm | — |
Thickness | ≤ 1 mm | — |
Temperature | 650–900 °C | — |
Duration | 3–15 minutes | — |
Temperature | 10–100 °C | — |
Duration | 20–30 minutes | — |
Temperature | 25–35 °C | — |
Temperature | ≤ 5 °C | — |
ELECTROLYTIC COPPER FOIL FOR GRAPHENE AND METHOD FOR PRODUCING THE COPPER FOIL
transition metal substrate
nickel substrate
Ni
copper substrate
Cu
soybean oil
| 97 % |
C |
Thickness | 300–800 nm | — |
Thickness | ≤ 1 mm | — |
Temperature | 650–900 °C | — |
Duration | 3–15 minutes | — |
Temperature | 10–100 °C | — |
Duration | 20–30 minutes | — |
Temperature | 25–35 °C | — |
Temperature | ≤ 5 °C | — |
ELECTROLYTIC COPPER FOIL FOR GRAPHENE AND METHOD FOR PRODUCING THE COPPER FOIL
transition metal substrate
nickel substrate
Ni
copper substrate
Cu
soybean oil
| 97 % |
C |
Thickness | 300–800 nm | — |
Thickness | ≤ 1 mm | — |
Temperature | 650–900 °C | — |
Duration | 3–15 minutes | — |
Temperature | 10–100 °C | — |
Duration | 20–30 minutes | — |
Temperature | 25–35 °C | — |
Temperature | ≤ 5 °C | — |
ELECTROLYTIC COPPER FOIL FOR GRAPHENE AND METHOD FOR PRODUCING THE COPPER FOIL
transition metal substrate
nickel substrate
Ni
copper substrate
Cu
soybean oil
| 97 % |
C |
Thickness | 300–800 nm | — |
Thickness | ≤ 1 mm | — |
Temperature | 650–900 °C | — |
Duration | 3–15 minutes | — |
Temperature | 10–100 °C | — |
Duration | 20–30 minutes | — |
Temperature | 25–35 °C | — |
Temperature | ≤ 5 °C | — |
ELECTROLYTIC COPPER FOIL FOR GRAPHENE AND METHOD FOR PRODUCING THE COPPER FOIL