Patent
US 9,567,223METHOD FOR MANUFACTURING GRAPHENE FILM, GRAPHENE FILM MANUFACTURED BY SAME, ELECTRONIC DEVICE COMPRISING THE GRAPHENE FILM
Yong Won SONG
US
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Patent
Atlas literature
Patent
US 9,567,223Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Currently A rn ended) A method for manufacturing graphene film, comprising: (1) introducing a supporting substrate in a reactor: (2) preparing a nano crysta ll ine la yer ofthahtimina catalyst SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.1.10.1865.1150.2256.1198.svg 0.16 1.303 Chemistry Black and white having catalytic activity on the supporting substrate t e-prepareoAd nsu lating substrate; and (3) growing nano-graphenes on the nano crystalline Iav er of the alumina catalyst SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.1.14.505.1610.983.1660.svg 0.167 1.593 Chemistry Black and white t o manufacture a graphene film comprising a graphene layer of the nano-graphenes, wherein the growing of the nano-graphenes is accomplished by pyrolyzing carbon source included in a reactive gas to grow the nano-graphenes on the supporting substrate, wherein the method is essen tia fy free of the does no f substantia tl y use of a metal catalyst substantia ll y in the step (3), and SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.1.21.462.2418.885.2464.svg 0.153 1.41 Chemistry Black and white c ystalli nejlaye~r of the al umin a catalyst coprgisesat SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.1.22.297.2533.2188.2580.svg 0.157 6.303 Chemistry Black and white and the combination thereof. Page 2 of 11
The method for manufacturing graphene fi lm according to claim 1, wherein a grain size of the nano graphene is controlled to 5 nm⁻¹⁰⁰⁰ pm by controlling growth time of the nano graphene in the step (3).
The method for manufacturing graphene film according to claim 1, wherein in the step (3), the nano graphenes are grown with growth time of no more than 120 mins.
The method for manufact u ring graphene film according to claim 1, wherein in the step (3), a growth temperature of the graphene film is no more than 1350 4 C.
The method for manufacturing graphene film according to claim 1, wherein the carbo source in the step (3) is at least one selected from the group consisting of methane, ethane, propane, acetylene, methanol, ethanol, propanol and the combinations thereof. Page 3 of 11
The m eth o d of manufactu ring graphen e f ilm according to claim 1, wh ere in the re active gas in the step (3) comprises ambient gas which is at least one s ele cted fr om the group consisting of n itr ogen, helium, neon, argon, hydrogen, and the combinations th ere of,
The method for manufacturing graphene film according to claim 1, wh erei n th e re acti ve gas comprises H₂₀ and the conten t of H₂₀ is no mo re t han 20 ppm on the basis of to tal re active gas.
The method fo r m anufacturing graphene f ilm according to claim 1, wh ere in the graphen e l ay er comprises singl SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.3.11.1268.1631.1429.1678.svg 0.157 0.537 Chemistry Black and white or mu lti -lay er gr aphen e; and an adhesion energy between th e l ay er of t he alumina catalyst and the graphene lay er has sma ller valu e t han tha t bet w een graphen e l ayers in the multi-lay er graphene.
The method for manufacturing graphene film according to claim 1, wh ere in the Reman sp ectr um of t he graphen e l ay er has 2D peak shi fted to red and FWHM of the 2D peak is 30-100 cm⁻¹. Page 4 of 11
The method for manufacturing graphene film according to claim 1, wherein a precursor for growth of the alumina catalyst comprises at least one aluminum precursor selected from the group consisting of tri methyl aluminium ((CH₃)3A1, TMA), aluminum isoproxide ([Al₁(OC₃H₇)3], IPA), methylpyrolidine- tri- methyl aluminum (MPTMA), ethyl-pyridine- tri ethyl-aluminum (EPPTEA), ethyl-pyridine-dimethyl-aluminum hydridge (EPPDMAH), alane (AICH₃) and the combinations th ereof; and at least one oxygen precursor selected from the croup consisting of 03, H₂₀ and the combination thereof.
The method for manufacturing graphene film according to claim 1, wherein the step (2) com pri ses crystallizing amorphous or noncrystalline alumina and such crystallization is accomplished by a hea t tr eatment a t t emperature range of 70* C.-1100* C. fo r 1- 30 mins.
(Curren tly Amended) The method for manufacturing graphene film according to claim 1, furthe r c omprising: (4) detaching the gr aphene film from the nano cry staine layer of the alumina SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.4.18.505.2438.741.2486.svg 0.16 0.787 Chemistry Black and white ca t a ly s t -substrate after the step (3).
The method for manufacturing graphene film according to claim 1 4, wherein the f a no crystalline layer of t hilum 1 ina catjlyst insulatig frm in the step (4) detached from the graphene film is reused as the nano crystalline layer of the alumina catalyst ns Lating-substrate of the step (1).
(Ca nce led) SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.2.6.732.933.828.972.svg 0.13 0.32 Chemistry Black and white ehdfr SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.2.6.1113.932.1460.980.svg 0.16 1.157 Chemistry Black and white rpes~- SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.2.6.1821.933.2261.980.svg 0.157 1.467 Chemistry Black and white 4rwhre4ivadayer SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.2.7.744.1058.776.1084.svg 0.087 0.107 Chemistry Black and white fthetahmi na- caaatcmprieaeastoneeiat44om the igoumensia tin go ma SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.2.8.1069.1164.1284.1208.svg 0.147 0.717 Chemistry Black and white et- SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.2.8.1421.1162.1732.1204.svg 0.14 1.037 Chemistry Black and white he0into thereof.
The method for manufacturing graphen e f ilm accordin g to cla im 1, wh erei n the adhesion energy between th e l ay er of t he alumina catalyst and the graphen e l ay er is no mo re t han meV/carbon atom.
A graphene film comprising a graphene lay er of nano- SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.5.17.308.2556.2168.2604.svg 0.16 6.20 Chemistry Black and white having a grain size 5 nm⁻¹⁰⁰⁰,um wherein a shee t r esistance of t he graphene layer is no more than 3 kDI/; and the Raran spec tru rn of t he graphene layer has 2D peak Page 6 of 11
The graphene film according to claim 19, wherein the graphene layer comprises nano graphenes having a rat i o of a mean area to a variance of 0.7 0.9. Page 7 of 11
Layer stacks claimed or described, ordered top of device to substrate.
graphene film on nanocrystalline alumina insulating substrate
Materials described outside the worked examples.
nanocrystalline alumina catalyst
Al₂O₃
gamma alumina/delta alumina
nano-graphene/graphene film
C
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Sheet Resistance | ≤ 3000 Ω/□ | C |
Raman 2D peak FWHM | 30–100 cm⁻¹ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,567,223Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Currently A rn ended) A method for manufacturing graphene film, comprising: (1) introducing a supporting substrate in a reactor: (2) preparing a nano crysta ll ine la yer ofthahtimina catalyst SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.1.10.1865.1150.2256.1198.svg 0.16 1.303 Chemistry Black and white having catalytic activity on the supporting substrate t e-prepareoAd nsu lating substrate; and (3) growing nano-graphenes on the nano crystalline Iav er of the alumina catalyst SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.1.14.505.1610.983.1660.svg 0.167 1.593 Chemistry Black and white t o manufacture a graphene film comprising a graphene layer of the nano-graphenes, wherein the growing of the nano-graphenes is accomplished by pyrolyzing carbon source included in a reactive gas to grow the nano-graphenes on the supporting substrate, wherein the method is essen tia fy free of the does no f substantia tl y use of a metal catalyst substantia ll y in the step (3), and SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.1.21.462.2418.885.2464.svg 0.153 1.41 Chemistry Black and white c ystalli nejlaye~r of the al umin a catalyst coprgisesat SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.1.22.297.2533.2188.2580.svg 0.157 6.303 Chemistry Black and white and the combination thereof. Page 2 of 11
The method for manufacturing graphene fi lm according to claim 1, wherein a grain size of the nano graphene is controlled to 5 nm⁻¹⁰⁰⁰ pm by controlling growth time of the nano graphene in the step (3).
The method for manufacturing graphene film according to claim 1, wherein in the step (3), the nano graphenes are grown with growth time of no more than 120 mins.
The method for manufact u ring graphene film according to claim 1, wherein in the step (3), a growth temperature of the graphene film is no more than 1350 4 C.
The method for manufacturing graphene film according to claim 1, wherein the carbo source in the step (3) is at least one selected from the group consisting of methane, ethane, propane, acetylene, methanol, ethanol, propanol and the combinations thereof. Page 3 of 11
The m eth o d of manufactu ring graphen e f ilm according to claim 1, wh ere in the re active gas in the step (3) comprises ambient gas which is at least one s ele cted fr om the group consisting of n itr ogen, helium, neon, argon, hydrogen, and the combinations th ere of,
The method for manufacturing graphene film according to claim 1, wh erei n th e re acti ve gas comprises H₂₀ and the conten t of H₂₀ is no mo re t han 20 ppm on the basis of to tal re active gas.
The method fo r m anufacturing graphene f ilm according to claim 1, wh ere in the graphen e l ay er comprises singl SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.3.11.1268.1631.1429.1678.svg 0.157 0.537 Chemistry Black and white or mu lti -lay er gr aphen e; and an adhesion energy between th e l ay er of t he alumina catalyst and the graphene lay er has sma ller valu e t han tha t bet w een graphen e l ayers in the multi-lay er graphene.
The method for manufacturing graphene film according to claim 1, wh ere in the Reman sp ectr um of t he graphen e l ay er has 2D peak shi fted to red and FWHM of the 2D peak is 30-100 cm⁻¹. Page 4 of 11
The method for manufacturing graphene film according to claim 1, wherein a precursor for growth of the alumina catalyst comprises at least one aluminum precursor selected from the group consisting of tri methyl aluminium ((CH₃)3A1, TMA), aluminum isoproxide ([Al₁(OC₃H₇)3], IPA), methylpyrolidine- tri- methyl aluminum (MPTMA), ethyl-pyridine- tri ethyl-aluminum (EPPTEA), ethyl-pyridine-dimethyl-aluminum hydridge (EPPDMAH), alane (AICH₃) and the combinations th ereof; and at least one oxygen precursor selected from the croup consisting of 03, H₂₀ and the combination thereof.
The method for manufacturing graphene film according to claim 1, wherein the step (2) com pri ses crystallizing amorphous or noncrystalline alumina and such crystallization is accomplished by a hea t tr eatment a t t emperature range of 70* C.-1100* C. fo r 1- 30 mins.
(Curren tly Amended) The method for manufacturing graphene film according to claim 1, furthe r c omprising: (4) detaching the gr aphene film from the nano cry staine layer of the alumina SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.4.18.505.2438.741.2486.svg 0.16 0.787 Chemistry Black and white ca t a ly s t -substrate after the step (3).
The method for manufacturing graphene film according to claim 1 4, wherein the f a no crystalline layer of t hilum 1 ina catjlyst insulatig frm in the step (4) detached from the graphene film is reused as the nano crystalline layer of the alumina catalyst ns Lating-substrate of the step (1).
(Ca nce led) SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.2.6.732.933.828.972.svg 0.13 0.32 Chemistry Black and white ehdfr SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.2.6.1113.932.1460.980.svg 0.16 1.157 Chemistry Black and white rpes~- SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.2.6.1821.933.2261.980.svg 0.157 1.467 Chemistry Black and white 4rwhre4ivadayer SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.2.7.744.1058.776.1084.svg 0.087 0.107 Chemistry Black and white fthetahmi na- caaatcmprieaeastoneeiat44om the igoumensia tin go ma SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.2.8.1069.1164.1284.1208.svg 0.147 0.717 Chemistry Black and white et- SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.2.8.1421.1162.1732.1204.svg 0.14 1.037 Chemistry Black and white he0into thereof.
The method for manufacturing graphen e f ilm accordin g to cla im 1, wh erei n the adhesion energy between th e l ay er of t he alumina catalyst and the graphen e l ay er is no mo re t han meV/carbon atom.
A graphene film comprising a graphene lay er of nano- SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.5.17.308.2556.2168.2604.svg 0.16 6.20 Chemistry Black and white having a grain size 5 nm⁻¹⁰⁰⁰,um wherein a shee t r esistance of t he graphene layer is no more than 3 kDI/; and the Raran spec tru rn of t he graphene layer has 2D peak Page 6 of 11
The graphene film according to claim 19, wherein the graphene layer comprises nano graphenes having a rat i o of a mean area to a variance of 0.7 0.9. Page 7 of 11
Layer stacks claimed or described, ordered top of device to substrate.
graphene film on nanocrystalline alumina insulating substrate
Materials described outside the worked examples.
nanocrystalline alumina catalyst
Al₂O₃
gamma alumina/delta alumina
nano-graphene/graphene film
C
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Sheet Resistance | ≤ 3000 Ω/□ | C |
Raman 2D peak FWHM | 30–100 cm⁻¹ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,567,223Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Currently A rn ended) A method for manufacturing graphene film, comprising: (1) introducing a supporting substrate in a reactor: (2) preparing a nano crysta ll ine la yer ofthahtimina catalyst SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.1.10.1865.1150.2256.1198.svg 0.16 1.303 Chemistry Black and white having catalytic activity on the supporting substrate t e-prepareoAd nsu lating substrate; and (3) growing nano-graphenes on the nano crystalline Iav er of the alumina catalyst SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.1.14.505.1610.983.1660.svg 0.167 1.593 Chemistry Black and white t o manufacture a graphene film comprising a graphene layer of the nano-graphenes, wherein the growing of the nano-graphenes is accomplished by pyrolyzing carbon source included in a reactive gas to grow the nano-graphenes on the supporting substrate, wherein the method is essen tia fy free of the does no f substantia tl y use of a metal catalyst substantia ll y in the step (3), and SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.1.21.462.2418.885.2464.svg 0.153 1.41 Chemistry Black and white c ystalli nejlaye~r of the al umin a catalyst coprgisesat SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.1.22.297.2533.2188.2580.svg 0.157 6.303 Chemistry Black and white and the combination thereof. Page 2 of 11
The method for manufacturing graphene fi lm according to claim 1, wherein a grain size of the nano graphene is controlled to 5 nm⁻¹⁰⁰⁰ pm by controlling growth time of the nano graphene in the step (3).
The method for manufacturing graphene film according to claim 1, wherein in the step (3), the nano graphenes are grown with growth time of no more than 120 mins.
The method for manufact u ring graphene film according to claim 1, wherein in the step (3), a growth temperature of the graphene film is no more than 1350 4 C.
The method for manufacturing graphene film according to claim 1, wherein the carbo source in the step (3) is at least one selected from the group consisting of methane, ethane, propane, acetylene, methanol, ethanol, propanol and the combinations thereof. Page 3 of 11
The m eth o d of manufactu ring graphen e f ilm according to claim 1, wh ere in the re active gas in the step (3) comprises ambient gas which is at least one s ele cted fr om the group consisting of n itr ogen, helium, neon, argon, hydrogen, and the combinations th ere of,
The method for manufacturing graphene film according to claim 1, wh erei n th e re acti ve gas comprises H₂₀ and the conten t of H₂₀ is no mo re t han 20 ppm on the basis of to tal re active gas.
The method fo r m anufacturing graphene f ilm according to claim 1, wh ere in the graphen e l ay er comprises singl SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.3.11.1268.1631.1429.1678.svg 0.157 0.537 Chemistry Black and white or mu lti -lay er gr aphen e; and an adhesion energy between th e l ay er of t he alumina catalyst and the graphene lay er has sma ller valu e t han tha t bet w een graphen e l ayers in the multi-lay er graphene.
The method for manufacturing graphene film according to claim 1, wh ere in the Reman sp ectr um of t he graphen e l ay er has 2D peak shi fted to red and FWHM of the 2D peak is 30-100 cm⁻¹. Page 4 of 11
The method for manufacturing graphene film according to claim 1, wherein a precursor for growth of the alumina catalyst comprises at least one aluminum precursor selected from the group consisting of tri methyl aluminium ((CH₃)3A1, TMA), aluminum isoproxide ([Al₁(OC₃H₇)3], IPA), methylpyrolidine- tri- methyl aluminum (MPTMA), ethyl-pyridine- tri ethyl-aluminum (EPPTEA), ethyl-pyridine-dimethyl-aluminum hydridge (EPPDMAH), alane (AICH₃) and the combinations th ereof; and at least one oxygen precursor selected from the croup consisting of 03, H₂₀ and the combination thereof.
The method for manufacturing graphene film according to claim 1, wherein the step (2) com pri ses crystallizing amorphous or noncrystalline alumina and such crystallization is accomplished by a hea t tr eatment a t t emperature range of 70* C.-1100* C. fo r 1- 30 mins.
(Curren tly Amended) The method for manufacturing graphene film according to claim 1, furthe r c omprising: (4) detaching the gr aphene film from the nano cry staine layer of the alumina SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.4.18.505.2438.741.2486.svg 0.16 0.787 Chemistry Black and white ca t a ly s t -substrate after the step (3).
The method for manufacturing graphene film according to claim 1 4, wherein the f a no crystalline layer of t hilum 1 ina catjlyst insulatig frm in the step (4) detached from the graphene film is reused as the nano crystalline layer of the alumina catalyst ns Lating-substrate of the step (1).
(Ca nce led) SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.2.6.732.933.828.972.svg 0.13 0.32 Chemistry Black and white ehdfr SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.2.6.1113.932.1460.980.svg 0.16 1.157 Chemistry Black and white rpes~- SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.2.6.1821.933.2261.980.svg 0.157 1.467 Chemistry Black and white 4rwhre4ivadayer SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.2.7.744.1058.776.1084.svg 0.087 0.107 Chemistry Black and white fthetahmi na- caaatcmprieaeastoneeiat44om the igoumensia tin go ma SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.2.8.1069.1164.1284.1208.svg 0.147 0.717 Chemistry Black and white et- SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.2.8.1421.1162.1732.1204.svg 0.14 1.037 Chemistry Black and white he0into thereof.
The method for manufacturing graphen e f ilm accordin g to cla im 1, wh erei n the adhesion energy between th e l ay er of t he alumina catalyst and the graphen e l ay er is no mo re t han meV/carbon atom.
A graphene film comprising a graphene lay er of nano- SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.5.17.308.2556.2168.2604.svg 0.16 6.20 Chemistry Black and white having a grain size 5 nm⁻¹⁰⁰⁰,um wherein a shee t r esistance of t he graphene layer is no more than 3 kDI/; and the Raran spec tru rn of t he graphene layer has 2D peak Page 6 of 11
The graphene film according to claim 19, wherein the graphene layer comprises nano graphenes having a rat i o of a mean area to a variance of 0.7 0.9. Page 7 of 11
Layer stacks claimed or described, ordered top of device to substrate.
graphene film on nanocrystalline alumina insulating substrate
Materials described outside the worked examples.
nanocrystalline alumina catalyst
Al₂O₃
gamma alumina/delta alumina
nano-graphene/graphene film
C
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Sheet Resistance | ≤ 3000 Ω/□ | C |
Raman 2D peak FWHM | 30–100 cm⁻¹ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,567,223Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Currently A rn ended) A method for manufacturing graphene film, comprising: (1) introducing a supporting substrate in a reactor: (2) preparing a nano crysta ll ine la yer ofthahtimina catalyst SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.1.10.1865.1150.2256.1198.svg 0.16 1.303 Chemistry Black and white having catalytic activity on the supporting substrate t e-prepareoAd nsu lating substrate; and (3) growing nano-graphenes on the nano crystalline Iav er of the alumina catalyst SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.1.14.505.1610.983.1660.svg 0.167 1.593 Chemistry Black and white t o manufacture a graphene film comprising a graphene layer of the nano-graphenes, wherein the growing of the nano-graphenes is accomplished by pyrolyzing carbon source included in a reactive gas to grow the nano-graphenes on the supporting substrate, wherein the method is essen tia fy free of the does no f substantia tl y use of a metal catalyst substantia ll y in the step (3), and SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.1.21.462.2418.885.2464.svg 0.153 1.41 Chemistry Black and white c ystalli nejlaye~r of the al umin a catalyst coprgisesat SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.1.22.297.2533.2188.2580.svg 0.157 6.303 Chemistry Black and white and the combination thereof. Page 2 of 11
The method for manufacturing graphene fi lm according to claim 1, wherein a grain size of the nano graphene is controlled to 5 nm⁻¹⁰⁰⁰ pm by controlling growth time of the nano graphene in the step (3).
The method for manufacturing graphene film according to claim 1, wherein in the step (3), the nano graphenes are grown with growth time of no more than 120 mins.
The method for manufact u ring graphene film according to claim 1, wherein in the step (3), a growth temperature of the graphene film is no more than 1350 4 C.
The method for manufacturing graphene film according to claim 1, wherein the carbo source in the step (3) is at least one selected from the group consisting of methane, ethane, propane, acetylene, methanol, ethanol, propanol and the combinations thereof. Page 3 of 11
The m eth o d of manufactu ring graphen e f ilm according to claim 1, wh ere in the re active gas in the step (3) comprises ambient gas which is at least one s ele cted fr om the group consisting of n itr ogen, helium, neon, argon, hydrogen, and the combinations th ere of,
The method for manufacturing graphene film according to claim 1, wh erei n th e re acti ve gas comprises H₂₀ and the conten t of H₂₀ is no mo re t han 20 ppm on the basis of to tal re active gas.
The method fo r m anufacturing graphene f ilm according to claim 1, wh ere in the graphen e l ay er comprises singl SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.3.11.1268.1631.1429.1678.svg 0.157 0.537 Chemistry Black and white or mu lti -lay er gr aphen e; and an adhesion energy between th e l ay er of t he alumina catalyst and the graphene lay er has sma ller valu e t han tha t bet w een graphen e l ayers in the multi-lay er graphene.
The method for manufacturing graphene film according to claim 1, wh ere in the Reman sp ectr um of t he graphen e l ay er has 2D peak shi fted to red and FWHM of the 2D peak is 30-100 cm⁻¹. Page 4 of 11
The method for manufacturing graphene film according to claim 1, wherein a precursor for growth of the alumina catalyst comprises at least one aluminum precursor selected from the group consisting of tri methyl aluminium ((CH₃)3A1, TMA), aluminum isoproxide ([Al₁(OC₃H₇)3], IPA), methylpyrolidine- tri- methyl aluminum (MPTMA), ethyl-pyridine- tri ethyl-aluminum (EPPTEA), ethyl-pyridine-dimethyl-aluminum hydridge (EPPDMAH), alane (AICH₃) and the combinations th ereof; and at least one oxygen precursor selected from the croup consisting of 03, H₂₀ and the combination thereof.
The method for manufacturing graphene film according to claim 1, wherein the step (2) com pri ses crystallizing amorphous or noncrystalline alumina and such crystallization is accomplished by a hea t tr eatment a t t emperature range of 70* C.-1100* C. fo r 1- 30 mins.
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The method for manufacturing graphene film according to claim 1 4, wherein the f a no crystalline layer of t hilum 1 ina catjlyst insulatig frm in the step (4) detached from the graphene film is reused as the nano crystalline layer of the alumina catalyst ns Lating-substrate of the step (1).
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The method for manufacturing graphen e f ilm accordin g to cla im 1, wh erei n the adhesion energy between th e l ay er of t he alumina catalyst and the graphen e l ay er is no mo re t han meV/carbon atom.
A graphene film comprising a graphene lay er of nano- SVG 14456550.09-12-2016.IT₂₇EYT₅PXXIFW1.CLM.5.17.308.2556.2168.2604.svg 0.16 6.20 Chemistry Black and white having a grain size 5 nm⁻¹⁰⁰⁰,um wherein a shee t r esistance of t he graphene layer is no more than 3 kDI/; and the Raran spec tru rn of t he graphene layer has 2D peak Page 6 of 11
The graphene film according to claim 19, wherein the graphene layer comprises nano graphenes having a rat i o of a mean area to a variance of 0.7 0.9. Page 7 of 11
Layer stacks claimed or described, ordered top of device to substrate.
graphene film on nanocrystalline alumina insulating substrate
Materials described outside the worked examples.
nanocrystalline alumina catalyst
Al₂O₃
gamma alumina/delta alumina
nano-graphene/graphene film
C
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Sheet Resistance | ≤ 3000 Ω/□ | C |
Raman 2D peak FWHM | 30–100 cm⁻¹ |
Related documents with shared materials, methods, properties, or citations.
carbon source
aluminum precursor (TMA/IPA/MPTMA/EPPTEA/EPPDMAH/alane)
polymer film/polymer solution
Temperature | ≤ 3 k | — |
Temperature | ≥ 3 k | — |
Thickness | 20–60 nm | — |
Thickness | 30–100 cm | — |
Thickness | ≤ 14 nm | — |
Thickness | ≤ 2 nm | — |
Thickness | ≤ 0.3 nm | — |
Thickness | ≤ 0.18 nm | — |
Thickness | ≤ 3000 nm | — |
Temperature | ≤ 2 k | — |
Thickness | ≥ 14 nm | — |
Thickness | ≥ 2 nm | — |
Thickness | ≥ 0.3 nm | — |
Thickness | ≥ 0.18 nm | — |
Thickness | ≥ 3000 nm | — |
Temperature | ≥ 2 k | — |
Thickness | ≥ 20 cm | — |
Duration | 1–30 mins | — |
Duration | ≤ 120 mins | — |
Duration | ≥ 120 mins | — |
Duration | 1–30 min | — |
GRAPHENE MANUFACTURING METHOD
carbon source
aluminum precursor (TMA/IPA/MPTMA/EPPTEA/EPPDMAH/alane)
polymer film/polymer solution
Temperature | ≤ 3 k | — |
Temperature | ≥ 3 k | — |
Thickness | 20–60 nm | — |
Thickness | 30–100 cm | — |
Thickness | ≤ 14 nm | — |
Thickness | ≤ 2 nm | — |
Thickness | ≤ 0.3 nm | — |
Thickness | ≤ 0.18 nm | — |
Thickness | ≤ 3000 nm | — |
Temperature | ≤ 2 k | — |
Thickness | ≥ 14 nm | — |
Thickness | ≥ 2 nm | — |
Thickness | ≥ 0.3 nm | — |
Thickness | ≥ 0.18 nm | — |
Thickness | ≥ 3000 nm | — |
Temperature | ≥ 2 k | — |
Thickness | ≥ 20 cm | — |
Duration | 1–30 mins | — |
Duration | ≤ 120 mins | — |
Duration | ≥ 120 mins | — |
Duration | 1–30 min | — |
GRAPHENE MANUFACTURING METHOD
carbon source
aluminum precursor (TMA/IPA/MPTMA/EPPTEA/EPPDMAH/alane)
polymer film/polymer solution
Temperature | ≤ 3 k | — |
Temperature | ≥ 3 k | — |
Thickness | 20–60 nm | — |
Thickness | 30–100 cm | — |
Thickness | ≤ 14 nm | — |
Thickness | ≤ 2 nm | — |
Thickness | ≤ 0.3 nm | — |
Thickness | ≤ 0.18 nm | — |
Thickness | ≤ 3000 nm | — |
Temperature | ≤ 2 k | — |
Thickness | ≥ 14 nm | — |
Thickness | ≥ 2 nm | — |
Thickness | ≥ 0.3 nm | — |
Thickness | ≥ 0.18 nm | — |
Thickness | ≥ 3000 nm | — |
Temperature | ≥ 2 k | — |
Thickness | ≥ 20 cm | — |
Duration | 1–30 mins | — |
Duration | ≤ 120 mins | — |
Duration | ≥ 120 mins | — |
Duration | 1–30 min | — |
GRAPHENE MANUFACTURING METHOD
carbon source
aluminum precursor (TMA/IPA/MPTMA/EPPTEA/EPPDMAH/alane)
polymer film/polymer solution
Temperature | ≤ 3 k | — |
Temperature | ≥ 3 k | — |
Thickness | 20–60 nm | — |
Thickness | 30–100 cm | — |
Thickness | ≤ 14 nm | — |
Thickness | ≤ 2 nm | — |
Thickness | ≤ 0.3 nm | — |
Thickness | ≤ 0.18 nm | — |
Thickness | ≤ 3000 nm | — |
Temperature | ≤ 2 k | — |
Thickness | ≥ 14 nm | — |
Thickness | ≥ 2 nm | — |
Thickness | ≥ 0.3 nm | — |
Thickness | ≥ 0.18 nm | — |
Thickness | ≥ 3000 nm | — |
Temperature | ≥ 2 k | — |
Thickness | ≥ 20 cm | — |
Duration | 1–30 mins | — |
Duration | ≤ 120 mins | — |
Duration | ≥ 120 mins | — |
Duration | 1–30 min | — |
GRAPHENE MANUFACTURING METHOD