Patent
US 11,056,343gold layer
Au
deionized water
platinum layer
Pt
inert metal layer (gold, ruthenium, silver, iridium)
ruthenium
Ru
rhodium
Rh
palladium
Pd
silver
Ag
osmium
Os
iridium
Ir
silicon substrate
Si
silicon dioxide substrate
SiO₂
| — |
Duration | 30–300 s | — |
Duration | 1–5 minutes | — |
Graphene Based Reversible Nano-Switch/Sensor Schottky Diode (nanoSSSD) Device
Methods of manufacturing and transferring larger-sized graphene
gold layer
Au
deionized water
platinum layer
Pt
inert metal layer (gold, ruthenium, silver, iridium)
ruthenium
Ru
rhodium
Rh
palladium
Pd
silver
Ag
osmium
Os
iridium
Ir
silicon substrate
Si
silicon dioxide substrate
SiO₂
| — |
Duration | 30–300 s | — |
Duration | 1–5 minutes | — |
Graphene Based Reversible Nano-Switch/Sensor Schottky Diode (nanoSSSD) Device
Methods of manufacturing and transferring larger-sized graphene
gold layer
Au
deionized water
platinum layer
Pt
inert metal layer (gold, ruthenium, silver, iridium)
ruthenium
Ru
rhodium
Rh
palladium
Pd
silver
Ag
osmium
Os
iridium
Ir
silicon substrate
Si
silicon dioxide substrate
SiO₂
| — |
Duration | 30–300 s | — |
Duration | 1–5 minutes | — |
Graphene Based Reversible Nano-Switch/Sensor Schottky Diode (nanoSSSD) Device
Methods of manufacturing and transferring larger-sized graphene
gold layer
Au
deionized water
platinum layer
Pt
inert metal layer (gold, ruthenium, silver, iridium)
ruthenium
Ru
rhodium
Rh
palladium
Pd
silver
Ag
osmium
Os
iridium
Ir
silicon substrate
Si
silicon dioxide substrate
SiO₂
| — |
Duration | 30–300 s | — |
Duration | 1–5 minutes | — |
Graphene Based Reversible Nano-Switch/Sensor Schottky Diode (nanoSSSD) Device