Patent
US 10,128,406GaN TEMPLATE SUBSTRATE
Mikiya Ichimura
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,128,406Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 schematically illustrates a cross-sectional structure of a 15 device substrate 10 according to an embodiment of the present invention. The device …
FIG. 2 exemplarily illustrates a structure of the device layer 5, for example, when formed with an LED structure. The device layer 5 in
FIG. 3 is a Nomarski differential interference microscope image of a surface of a device substrate on which the morphological abnormality occurs. Description of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
A GaN template substrate, comprising: a base substrate made of sapphire; and a first GaN layer epitaxially formed on said base substrate, wherein a full width at half maximum of a peak near a wavenumber of 568 cm⁻¹ in a Raman spectrum is lower than or equal to 1.8 cm⁻¹, the peak representing E₂ phonons of GaN, the Raman spectrum being obtained by measuring said first GaN layer by Raman spectroscopy, and wherein said first GaN layer is formed with a thickness of 1 p m to 5 pm. Previously presented
The GaN template substrate according to claim 2, further comprising a second GaN layer epitaxially formed on said first G aN layer. Original
A GaN template substrate, comprising: a base substrate made of sapphire; a buffer layer formed on said base substrate and made of GaN; and a first GaN layer epitaxially formed on said buffer layer, wherein said first GaN layer has a compressive stress greater than or equal to 260 M Pa, the compressive stress being intrinsic in an inplane direction, and a full width at half maximum of a peak near a wavenumber of 568 cm⁻¹ in a Raman spectrum is lower than or equal to 1.8 cm⁻¹, the peak representing E₂ phonons of GaN, the Raman spectrum being obtained by measuring said first GaN layer by Raman spectroscopy, and wherein said first GaN layer is formed with a thickness of 1 p m to 5 pm. Previously presented
The GaN template substrate according to claim 3, wherein a value of the compressive stress is obtained from a Raman spectrum obtained by measuring said first GaN layer by Raman spectroscopy. Original
The GaN template substrate according to claim 3, further comprising a second GaN layer epitaxially formed on said first GaN layer. Original
Canceled
Canceled
-11. Canceled
Canceled
The GaN template substrate according to claim on said base substrate and made of GaN, wherein buffer layer. Previously presented 2, f u rther comprising a buffer layer formed said first GaN layer is epitaxially formed on said
Embodiments described in the patent, grouped by the materials and process steps they use.
7 materials4 process steps
Nine types of device substrates (samples A to I) differing in conditions for forming the first GaN layers were fabricated and evaluated. A 4-inch c-plane sapphire substrate (630 µm thick) was used as the base substrate. The substrate was cleaned at 1150°C in H2. A GaN buffer layer (30 nm) was grown by MOCVD at 500°C using TMG and NH3. The first GaN layer (3 µm) was grown by MOCVD at 100 kPa, with group 15:13 gas ratio of 2000, varying substrate temperature (1050, 1100, 1150°C) and H2:NH₃ partial pressure ratios (3x, 4x, 5x). Raman spectroscopy was used to evaluate intrinsic stress and crystallinity of the first GaN layer (E₂ phonon peak near 568 cm⁻¹, Ar+ laser 496.5 nm). A second GaN layer (~50 µm) was grown by Na-flux method at 850°C/4.5 MPa for ~20 h, then polished to 15 µm total nitride thickness. An LED device layer was then formed by MOCVD. Device substrate surfaces were evaluated by Nomarski differential interference microscopy for streaked morphological abnormality.
Layer stacks claimed or described, ordered top of device to substrate.
GaN template substrate (claim 2)
GaN template substrate (claim 3)
GaN template substrate with second GaN layer (claim 7)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Raman E2 phonon FWHM of first GaN layer (claim threshold) | ≤ 1.8 cm⁻¹ | GaN |
Raman E2 phonon peak position in first GaN layer | 568 cm⁻¹ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,128,406Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 schematically illustrates a cross-sectional structure of a 15 device substrate 10 according to an embodiment of the present invention. The device …
FIG. 2 exemplarily illustrates a structure of the device layer 5, for example, when formed with an LED structure. The device layer 5 in
FIG. 3 is a Nomarski differential interference microscope image of a surface of a device substrate on which the morphological abnormality occurs. Description of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
A GaN template substrate, comprising: a base substrate made of sapphire; and a first GaN layer epitaxially formed on said base substrate, wherein a full width at half maximum of a peak near a wavenumber of 568 cm⁻¹ in a Raman spectrum is lower than or equal to 1.8 cm⁻¹, the peak representing E₂ phonons of GaN, the Raman spectrum being obtained by measuring said first GaN layer by Raman spectroscopy, and wherein said first GaN layer is formed with a thickness of 1 p m to 5 pm. Previously presented
The GaN template substrate according to claim 2, further comprising a second GaN layer epitaxially formed on said first G aN layer. Original
A GaN template substrate, comprising: a base substrate made of sapphire; a buffer layer formed on said base substrate and made of GaN; and a first GaN layer epitaxially formed on said buffer layer, wherein said first GaN layer has a compressive stress greater than or equal to 260 M Pa, the compressive stress being intrinsic in an inplane direction, and a full width at half maximum of a peak near a wavenumber of 568 cm⁻¹ in a Raman spectrum is lower than or equal to 1.8 cm⁻¹, the peak representing E₂ phonons of GaN, the Raman spectrum being obtained by measuring said first GaN layer by Raman spectroscopy, and wherein said first GaN layer is formed with a thickness of 1 p m to 5 pm. Previously presented
The GaN template substrate according to claim 3, wherein a value of the compressive stress is obtained from a Raman spectrum obtained by measuring said first GaN layer by Raman spectroscopy. Original
The GaN template substrate according to claim 3, further comprising a second GaN layer epitaxially formed on said first GaN layer. Original
Canceled
Canceled
-11. Canceled
Canceled
The GaN template substrate according to claim on said base substrate and made of GaN, wherein buffer layer. Previously presented 2, f u rther comprising a buffer layer formed said first GaN layer is epitaxially formed on said
Embodiments described in the patent, grouped by the materials and process steps they use.
7 materials4 process steps
Nine types of device substrates (samples A to I) differing in conditions for forming the first GaN layers were fabricated and evaluated. A 4-inch c-plane sapphire substrate (630 µm thick) was used as the base substrate. The substrate was cleaned at 1150°C in H2. A GaN buffer layer (30 nm) was grown by MOCVD at 500°C using TMG and NH3. The first GaN layer (3 µm) was grown by MOCVD at 100 kPa, with group 15:13 gas ratio of 2000, varying substrate temperature (1050, 1100, 1150°C) and H2:NH₃ partial pressure ratios (3x, 4x, 5x). Raman spectroscopy was used to evaluate intrinsic stress and crystallinity of the first GaN layer (E₂ phonon peak near 568 cm⁻¹, Ar+ laser 496.5 nm). A second GaN layer (~50 µm) was grown by Na-flux method at 850°C/4.5 MPa for ~20 h, then polished to 15 µm total nitride thickness. An LED device layer was then formed by MOCVD. Device substrate surfaces were evaluated by Nomarski differential interference microscopy for streaked morphological abnormality.
Layer stacks claimed or described, ordered top of device to substrate.
GaN template substrate (claim 2)
GaN template substrate (claim 3)
GaN template substrate with second GaN layer (claim 7)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Raman E2 phonon FWHM of first GaN layer (claim threshold) | ≤ 1.8 cm⁻¹ | GaN |
Raman E2 phonon peak position in first GaN layer | 568 cm⁻¹ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,128,406Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 schematically illustrates a cross-sectional structure of a 15 device substrate 10 according to an embodiment of the present invention. The device …
FIG. 2 exemplarily illustrates a structure of the device layer 5, for example, when formed with an LED structure. The device layer 5 in
FIG. 3 is a Nomarski differential interference microscope image of a surface of a device substrate on which the morphological abnormality occurs. Description of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
A GaN template substrate, comprising: a base substrate made of sapphire; and a first GaN layer epitaxially formed on said base substrate, wherein a full width at half maximum of a peak near a wavenumber of 568 cm⁻¹ in a Raman spectrum is lower than or equal to 1.8 cm⁻¹, the peak representing E₂ phonons of GaN, the Raman spectrum being obtained by measuring said first GaN layer by Raman spectroscopy, and wherein said first GaN layer is formed with a thickness of 1 p m to 5 pm. Previously presented
The GaN template substrate according to claim 2, further comprising a second GaN layer epitaxially formed on said first G aN layer. Original
A GaN template substrate, comprising: a base substrate made of sapphire; a buffer layer formed on said base substrate and made of GaN; and a first GaN layer epitaxially formed on said buffer layer, wherein said first GaN layer has a compressive stress greater than or equal to 260 M Pa, the compressive stress being intrinsic in an inplane direction, and a full width at half maximum of a peak near a wavenumber of 568 cm⁻¹ in a Raman spectrum is lower than or equal to 1.8 cm⁻¹, the peak representing E₂ phonons of GaN, the Raman spectrum being obtained by measuring said first GaN layer by Raman spectroscopy, and wherein said first GaN layer is formed with a thickness of 1 p m to 5 pm. Previously presented
The GaN template substrate according to claim 3, wherein a value of the compressive stress is obtained from a Raman spectrum obtained by measuring said first GaN layer by Raman spectroscopy. Original
The GaN template substrate according to claim 3, further comprising a second GaN layer epitaxially formed on said first GaN layer. Original
Canceled
Canceled
-11. Canceled
Canceled
The GaN template substrate according to claim on said base substrate and made of GaN, wherein buffer layer. Previously presented 2, f u rther comprising a buffer layer formed said first GaN layer is epitaxially formed on said
Embodiments described in the patent, grouped by the materials and process steps they use.
7 materials4 process steps
Nine types of device substrates (samples A to I) differing in conditions for forming the first GaN layers were fabricated and evaluated. A 4-inch c-plane sapphire substrate (630 µm thick) was used as the base substrate. The substrate was cleaned at 1150°C in H2. A GaN buffer layer (30 nm) was grown by MOCVD at 500°C using TMG and NH3. The first GaN layer (3 µm) was grown by MOCVD at 100 kPa, with group 15:13 gas ratio of 2000, varying substrate temperature (1050, 1100, 1150°C) and H2:NH₃ partial pressure ratios (3x, 4x, 5x). Raman spectroscopy was used to evaluate intrinsic stress and crystallinity of the first GaN layer (E₂ phonon peak near 568 cm⁻¹, Ar+ laser 496.5 nm). A second GaN layer (~50 µm) was grown by Na-flux method at 850°C/4.5 MPa for ~20 h, then polished to 15 µm total nitride thickness. An LED device layer was then formed by MOCVD. Device substrate surfaces were evaluated by Nomarski differential interference microscopy for streaked morphological abnormality.
Layer stacks claimed or described, ordered top of device to substrate.
GaN template substrate (claim 2)
GaN template substrate (claim 3)
GaN template substrate with second GaN layer (claim 7)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Raman E2 phonon FWHM of first GaN layer (claim threshold) | ≤ 1.8 cm⁻¹ | GaN |
Raman E2 phonon peak position in first GaN layer | 568 cm⁻¹ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,128,406Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 schematically illustrates a cross-sectional structure of a 15 device substrate 10 according to an embodiment of the present invention. The device …
FIG. 2 exemplarily illustrates a structure of the device layer 5, for example, when formed with an LED structure. The device layer 5 in
FIG. 3 is a Nomarski differential interference microscope image of a surface of a device substrate on which the morphological abnormality occurs. Description of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
A GaN template substrate, comprising: a base substrate made of sapphire; and a first GaN layer epitaxially formed on said base substrate, wherein a full width at half maximum of a peak near a wavenumber of 568 cm⁻¹ in a Raman spectrum is lower than or equal to 1.8 cm⁻¹, the peak representing E₂ phonons of GaN, the Raman spectrum being obtained by measuring said first GaN layer by Raman spectroscopy, and wherein said first GaN layer is formed with a thickness of 1 p m to 5 pm. Previously presented
The GaN template substrate according to claim 2, further comprising a second GaN layer epitaxially formed on said first G aN layer. Original
A GaN template substrate, comprising: a base substrate made of sapphire; a buffer layer formed on said base substrate and made of GaN; and a first GaN layer epitaxially formed on said buffer layer, wherein said first GaN layer has a compressive stress greater than or equal to 260 M Pa, the compressive stress being intrinsic in an inplane direction, and a full width at half maximum of a peak near a wavenumber of 568 cm⁻¹ in a Raman spectrum is lower than or equal to 1.8 cm⁻¹, the peak representing E₂ phonons of GaN, the Raman spectrum being obtained by measuring said first GaN layer by Raman spectroscopy, and wherein said first GaN layer is formed with a thickness of 1 p m to 5 pm. Previously presented
The GaN template substrate according to claim 3, wherein a value of the compressive stress is obtained from a Raman spectrum obtained by measuring said first GaN layer by Raman spectroscopy. Original
The GaN template substrate according to claim 3, further comprising a second GaN layer epitaxially formed on said first GaN layer. Original
Canceled
Canceled
-11. Canceled
Canceled
The GaN template substrate according to claim on said base substrate and made of GaN, wherein buffer layer. Previously presented 2, f u rther comprising a buffer layer formed said first GaN layer is epitaxially formed on said
Embodiments described in the patent, grouped by the materials and process steps they use.
7 materials4 process steps
Nine types of device substrates (samples A to I) differing in conditions for forming the first GaN layers were fabricated and evaluated. A 4-inch c-plane sapphire substrate (630 µm thick) was used as the base substrate. The substrate was cleaned at 1150°C in H2. A GaN buffer layer (30 nm) was grown by MOCVD at 500°C using TMG and NH3. The first GaN layer (3 µm) was grown by MOCVD at 100 kPa, with group 15:13 gas ratio of 2000, varying substrate temperature (1050, 1100, 1150°C) and H2:NH₃ partial pressure ratios (3x, 4x, 5x). Raman spectroscopy was used to evaluate intrinsic stress and crystallinity of the first GaN layer (E₂ phonon peak near 568 cm⁻¹, Ar+ laser 496.5 nm). A second GaN layer (~50 µm) was grown by Na-flux method at 850°C/4.5 MPa for ~20 h, then polished to 15 µm total nitride thickness. An LED device layer was then formed by MOCVD. Device substrate surfaces were evaluated by Nomarski differential interference microscopy for streaked morphological abnormality.
Layer stacks claimed or described, ordered top of device to substrate.
GaN template substrate (claim 2)
GaN template substrate (claim 3)
GaN template substrate with second GaN layer (claim 7)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Raman E2 phonon FWHM of first GaN layer (claim threshold) | ≤ 1.8 cm⁻¹ | GaN |
Raman E2 phonon peak position in first GaN layer | 568 cm⁻¹ |
Related documents with shared materials, methods, properties, or citations.
GaN template substrate with buffer and second GaN layer (claim 8)
GaN template substrate with buffer layer (claim 12)
LED device substrate (example)
GaN |
Ar laser plasma line FWHM near 516 cm-1 (instrument calibration) | 0.43 cm⁻¹ | — |
Pressure | ≥ 1 kPa | — |
Thickness | ≥ 1 nm | — |
Temperature | ≥ 800 °C | — |
Thickness | ≥ 2 nm | — |
Thickness | ≥ 5 nm | — |
Temperature | ≥ 1 °C | — |
GaN template substrate with buffer and second GaN layer (claim 8)
GaN template substrate with buffer layer (claim 12)
LED device substrate (example)
GaN |
Ar laser plasma line FWHM near 516 cm-1 (instrument calibration) | 0.43 cm⁻¹ | — |
Pressure | ≥ 1 kPa | — |
Thickness | ≥ 1 nm | — |
Temperature | ≥ 800 °C | — |
Thickness | ≥ 2 nm | — |
Thickness | ≥ 5 nm | — |
Temperature | ≥ 1 °C | — |
GaN template substrate with buffer and second GaN layer (claim 8)
GaN template substrate with buffer layer (claim 12)
LED device substrate (example)
GaN |
Ar laser plasma line FWHM near 516 cm-1 (instrument calibration) | 0.43 cm⁻¹ | — |
Pressure | ≥ 1 kPa | — |
Thickness | ≥ 1 nm | — |
Temperature | ≥ 800 °C | — |
Thickness | ≥ 2 nm | — |
Thickness | ≥ 5 nm | — |
Temperature | ≥ 1 °C | — |
GaN template substrate with buffer and second GaN layer (claim 8)
GaN template substrate with buffer layer (claim 12)
LED device substrate (example)
GaN |
Ar laser plasma line FWHM near 516 cm-1 (instrument calibration) | 0.43 cm⁻¹ | — |
Pressure | ≥ 1 kPa | — |
Thickness | ≥ 1 nm | — |
Temperature | ≥ 800 °C | — |
Thickness | ≥ 2 nm | — |
Thickness | ≥ 5 nm | — |
Temperature | ≥ 1 °C | — |