The forming method according to claim 1, wherein the semiconductor includes at least one of GaN, AIGaN and Ga InN.

A transfer method of transferring the gallium nitride system compound semiconductor layer obtained on the first substrate by the forming method according to claim 1 to another substrate, the method comprising: exposing an end portion of the first layer on the first substrate; preparing a second substrate with a release layer capable of falling in a releasable condition when subjected to a predetermined process formed thereon and a penetrating groove formed therein; bonding the first substrate to the second substrate through the release layer; bringing an etchant into contact with the first layer through the penetrating groove and the separating groove to selectively etch the first layer to transfer the epitaxial layer on the first substrate to the second substrate; bonding at least a portion of the epitaxial layer transferred to the second substrate to a third substrate; and separating the second substrate from the epitaxial layer at the release layer to transfer the epitaxial layer from the second substrate to the third substrate.

A substrate structure comprising: one of a silicon substrate, a metal substrate and a transparent substrate; and a gallium nitride system compound semiconductor layer obtained by the forming method according to claim 1 and bonded to the substrate.

The method according to claim 17, wherein the forming the epitaxial layer is through increase in a size of at least one of the core, combination of the cores, crystal growth, formation of facets, bending of dislocation lines, transverse crystal growth onto the first layer, collision between adjoining crystal grains, combination of the transversely grown crystals, formation of dislocation networks, and formation of a flat surface of the semiconductor.

A transfer method by the forming method according to claim 17 to another substrate different from the first substrate, the method comprising: -7- Amendment for Application No.: 12/611791 Attorney Docket: 10066349US 01 exposing an end portion of the first layer on the first substrate; preparing a second substrate with a release layer capable of falling in a releasable condition when subjected to a predetermined process formed thereon and a penetrating groove formed therein; bonding the first substrate to the second substrate through the release layer; and bringing an etchant into contact with the first layer through the penetrating groove and the separating groove to selectively etch the first layer to transfer the epitaxial layer on the first substrate to the second substrate; bonding at least a portion of the epitaxial layer transferred to the second substrate to a third substrate.

The forming method according to claim 1, wherein the semiconductor includes at least one of GaN, AIGaN and Ga InN.

A transfer method of transferring the gallium nitride system compound semiconductor layer obtained on the first substrate by the forming method according to claim 1 to another substrate, the method comprising: exposing an end portion of the first layer on the first substrate; preparing a second substrate with a release layer capable of falling in a releasable condition when subjected to a predetermined process formed thereon and a penetrating groove formed therein; bonding the first substrate to the second substrate through the release layer; bringing an etchant into contact with the first layer through the penetrating groove and the separating groove to selectively etch the first layer to transfer the epitaxial layer on the first substrate to the second substrate; bonding at least a portion of the epitaxial layer transferred to the second substrate to a third substrate; and separating the second substrate from the epitaxial layer at the release layer to transfer the epitaxial layer from the second substrate to the third substrate.

A substrate structure comprising: one of a silicon substrate, a metal substrate and a transparent substrate; and a gallium nitride system compound semiconductor layer obtained by the forming method according to claim 1 and bonded to the substrate.

The method according to claim 17, wherein the forming the epitaxial layer is through increase in a size of at least one of the core, combination of the cores, crystal growth, formation of facets, bending of dislocation lines, transverse crystal growth onto the first layer, collision between adjoining crystal grains, combination of the transversely grown crystals, formation of dislocation networks, and formation of a flat surface of the semiconductor.

A transfer method by the forming method according to claim 17 to another substrate different from the first substrate, the method comprising: -7- Amendment for Application No.: 12/611791 Attorney Docket: 10066349US 01 exposing an end portion of the first layer on the first substrate; preparing a second substrate with a release layer capable of falling in a releasable condition when subjected to a predetermined process formed thereon and a penetrating groove formed therein; bonding the first substrate to the second substrate through the release layer; and bringing an etchant into contact with the first layer through the penetrating groove and the separating groove to selectively etch the first layer to transfer the epitaxial layer on the first substrate to the second substrate; bonding at least a portion of the epitaxial layer transferred to the second substrate to a third substrate.

The forming method according to claim 1, wherein the semiconductor includes at least one of GaN, AIGaN and Ga InN.

A transfer method of transferring the gallium nitride system compound semiconductor layer obtained on the first substrate by the forming method according to claim 1 to another substrate, the method comprising: exposing an end portion of the first layer on the first substrate; preparing a second substrate with a release layer capable of falling in a releasable condition when subjected to a predetermined process formed thereon and a penetrating groove formed therein; bonding the first substrate to the second substrate through the release layer; bringing an etchant into contact with the first layer through the penetrating groove and the separating groove to selectively etch the first layer to transfer the epitaxial layer on the first substrate to the second substrate; bonding at least a portion of the epitaxial layer transferred to the second substrate to a third substrate; and separating the second substrate from the epitaxial layer at the release layer to transfer the epitaxial layer from the second substrate to the third substrate.

A substrate structure comprising: one of a silicon substrate, a metal substrate and a transparent substrate; and a gallium nitride system compound semiconductor layer obtained by the forming method according to claim 1 and bonded to the substrate.

The method according to claim 17, wherein the forming the epitaxial layer is through increase in a size of at least one of the core, combination of the cores, crystal growth, formation of facets, bending of dislocation lines, transverse crystal growth onto the first layer, collision between adjoining crystal grains, combination of the transversely grown crystals, formation of dislocation networks, and formation of a flat surface of the semiconductor.

A transfer method by the forming method according to claim 17 to another substrate different from the first substrate, the method comprising: -7- Amendment for Application No.: 12/611791 Attorney Docket: 10066349US 01 exposing an end portion of the first layer on the first substrate; preparing a second substrate with a release layer capable of falling in a releasable condition when subjected to a predetermined process formed thereon and a penetrating groove formed therein; bonding the first substrate to the second substrate through the release layer; and bringing an etchant into contact with the first layer through the penetrating groove and the separating groove to selectively etch the first layer to transfer the epitaxial layer on the first substrate to the second substrate; bonding at least a portion of the epitaxial layer transferred to the second substrate to a third substrate.

The forming method according to claim 1, wherein the semiconductor includes at least one of GaN, AIGaN and Ga InN.

A transfer method of transferring the gallium nitride system compound semiconductor layer obtained on the first substrate by the forming method according to claim 1 to another substrate, the method comprising: exposing an end portion of the first layer on the first substrate; preparing a second substrate with a release layer capable of falling in a releasable condition when subjected to a predetermined process formed thereon and a penetrating groove formed therein; bonding the first substrate to the second substrate through the release layer; bringing an etchant into contact with the first layer through the penetrating groove and the separating groove to selectively etch the first layer to transfer the epitaxial layer on the first substrate to the second substrate; bonding at least a portion of the epitaxial layer transferred to the second substrate to a third substrate; and separating the second substrate from the epitaxial layer at the release layer to transfer the epitaxial layer from the second substrate to the third substrate.

A substrate structure comprising: one of a silicon substrate, a metal substrate and a transparent substrate; and a gallium nitride system compound semiconductor layer obtained by the forming method according to claim 1 and bonded to the substrate.

The method according to claim 17, wherein the forming the epitaxial layer is through increase in a size of at least one of the core, combination of the cores, crystal growth, formation of facets, bending of dislocation lines, transverse crystal growth onto the first layer, collision between adjoining crystal grains, combination of the transversely grown crystals, formation of dislocation networks, and formation of a flat surface of the semiconductor.

A transfer method by the forming method according to claim 17 to another substrate different from the first substrate, the method comprising: -7- Amendment for Application No.: 12/611791 Attorney Docket: 10066349US 01 exposing an end portion of the first layer on the first substrate; preparing a second substrate with a release layer capable of falling in a releasable condition when subjected to a predetermined process formed thereon and a penetrating groove formed therein; bonding the first substrate to the second substrate through the release layer; and bringing an etchant into contact with the first layer through the penetrating groove and the separating groove to selectively etch the first layer to transfer the epitaxial layer on the first substrate to the second substrate; bonding at least a portion of the epitaxial layer transferred to the second substrate to a third substrate.