Patent
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Patent
US 11,747,390 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 depicts a dynamic on-resistance measuring circuit according to a comparative embodiment of the subject application;
FIG. 2 depicts a dynamic on-resistance measuring circuit according to another comparative embodiment of the subject application;
FIG. 3 depicts a block diagram of a dynamic on-resistance measuring apparatus and how it is implemented to measure on-resistance of a GaN-based device under …
FIG. 4 depicts waveforms of electrical signals in measur- ing dynamic on-resistance of a GaN-based device under test (DUT) according to an embodiment of the …
FIG. 5 depicts a more detailed block diagram of the dynamic on-resistance measuring apparatus according to an embodiment of the subject application;
FIG. 6 depicts a circuit diagram of the dynamic on- resistance measuring apparatus according to an embodiment of the subject application;
FIG. 7 depicts a circuit diagram of a dynamic on-resis- tance measuring apparatus according to another embodi- ment of the subject application;
FIG. 8 depicts a flow chart of a method for measuring dynamic on-resistance of a GaN-based device under test (DUT) according to some embodiments of the subject …
FIG. 9 depicts a flowchart of the step of generating the second control signal based on the first control signal according to some embodiments of the subject …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus for measuring dynamic on-resistance of a GaN-based device under test (DUT) comprising a first power terminal electrically connected to a first output node of a power supply, a second power terminal electrically connected to a second input node of the power supply, and a control terminal connected to an output of a first control-ling module being configured to generate a first control signal to switch on and off the DUT, the apparatus compris-ing: an input interface comprising a first input node configured for being electrically connected to the first power terminal of the DUT, a second input node configured for being electrically connected to the second power terminal of the DUT, and a control input node config-ured for being electrically connected to the output of the first controlling module; an output interface comprising a first output node config-ured for being electrically connected to a first signal input node of an electrical signal monitoring equipment and a second output node connected to the second input node and configured for being electrically connected to a second signal input node of the electrical signal monitoring equipment; a switching device comprising a control terminal, a first power terminal electrically connected to the first input node, and a second power terminal electrically coupled to the first output node through an impedance matching module and coupled to the second output node through a noise absorption circuit module; 20 a second controlling module comprising an input terminal electrically connected to the control input node and an output terminal electrically connected to the control terminal of the switching device; and being configured to: receive the first control signal from the first controlling module; and generate a second control signal to switch on and off the switching device such that the switching device is turned on later than the DUT for a first time interval and turned off earlier than the DUT for a second time interval, wherein the second controlling module comprises: a driving module configured to receive a driver input signal and an enabling signal, and generate the second control signal to switch on and off the switch-ing element; a first delay module configured to receive the first control signal and generate the driver input signal to the driving module; a second delay module configured to receive the first control signal; and a level reversal module connected to the second delay module and configured to generate the enabling signal to the driving module.
The apparatus according to claim 1, wherein the impedance matching module comprises a seventh resistor R₇ having a first terminal connected to the second terminal of the switching element and a second terminal connected to the first output node.
The apparatus according to claim 1, wherein the absorption circuit module comprises: a fourth diode D₄ having a first terminal connected to the second terminal of the switching element; an eighth resistor R₈ having a first terminal connected to a second terminal of the fourth diode D₄ and a second terminal connected to the second output node; and a fourth capacitor C₄ connected in parallel with the eighth resistor R8.
The apparatus according to claim 1, wherein the switching element is high electron mobility transistor (HEMT) device.
The apparatus according to claim 1, wherein the first delay module comprises: a first capacitor C₁ having a first terminal connected to a first input of the driving module and a second terminal connected to a GND node for coupling to a ground potential; a first diode D₁ having a cathode connected to the control input node and an anode connected to a first terminal of the first capacitor C1; and a first resistor R₁ is connected in parallel with the first diode D1.
The apparatus according to claim 1, wherein the second delay module comprises: a second capacitor C₂ having a first terminal connected to an input of the level reversal module and a second terminal connected to a GND node; a second diode D₂ having an anode connected to the control input node; a second resistor R₂ having a first terminal connected to a cathode of the second diode D₂ and a second terminal connected to the first terminal of the second capacitor C2; a third diode D₃ having a cathode connected to the control input node; and a third resistor R₃ having a first terminal connected to an anode of the third diode D₃ and a second terminal connected to the first terminal of the second capacitor C2.
The apparatus according to claim 1, wherein the level reversal module comprises: a third capacitor C₃ having a first terminal connected to a second input of the driving module and a second terminal connected to a GND node for coupling to a ground potential; a fourth resistor R₄ having a first terminal connected to a VCC node for coupling to a DC power supply; a fifth resistor R₅ having a first terminal connected to a second terminal of the fourth resistor R₄ and a second terminal connected to the GND node; a sixth resistor R₆ having a first terminal connected to the first terminal of the fifth resistor R₅ and a second terminal connected to the second input of the driving module; and a comparator having a negative input connected to the first terminal of the second capacitor C2, a positive input connected to the second terminal of the fourth resistor R4, and an output connected to the second input of the driving module.
The apparatus according to claim 1, wherein the level reversal module comprises: a transistor having a collector terminal connected to a second input of the driving module, a base terminal connected to the first terminal of the second capacitor C2; a fourth resistor R₄ having a first terminal connected to an emitter terminal of the transistor and a second terminal connected to a VCC node for coupling to a DC power supply; a fifth resistor R₅ having a first terminal connected to the emitter terminal of the transistor and a second terminal connected to a GND node for coupling to a ground potential; and a sixth resistor R₆ having a first terminal connected to the second input of the driving module and a second terminal connected to the VCC node.
A method for measuring dynamic on-resistance of a GaN-based device under test (DUT) having a first power terminal, a second power terminal and a control terminal, the method comprising: 11 12 connecting the first power terminal of the DUT to a first a first diode D₁ having a cathode connected to the control output node of a power supply, the second power input node and an anode connected to a first terminal of terminal of the DUT to a second output node of the first capacitor C1; and power supply, and the control terminal of the DUT to a first resistor R₁ is connected in parallel with the first an output of a first controlling module, respectively; 5 diode D1. connecting a first power terminal of a switching device to
The method according to claim 11, wherein the second the first power terminal of the DUT; delay module comprises: coupling a second power terminal of the switching device a second capacitor C₂ having a first terminal connected to a first signal input node of an electrical signal an input of the level reversal module and a second monitoring equipment through an impedance matching 10 terminal connected to a GND node for coupling to a module; ground potential; coupling the second power terminal of the switching a second diode D₂ having an anode connected to the device to the second input node through a noise absorp-control input node; tion circuit module; a second resistor R₂ having a first terminal connected to connecting the output of the first controlling module to an 15 a cathode of the second diode D₂ and a second terminal input of a second controlling module; connected to the first terminal of the second capacitor connecting a control terminal of the switching device to C2; an output of the second controlling module; a third diode D₃ having a cathode connected to the control generating, by the first controlling module, a first control input node; and signal to switch on and off the DUT; 20 a third resistor R₃ having a first terminal connected to an receiving, by the second controlling module, the first anode of the third diode D₃ and a second terminal control signal from the first controlling module; and connected to the first terminal of the second capacitor generating, by the second controlling module, a second C2. control signal to switch on and off the switching device
The method according to claim 11, wherein the level such that the switching device is turned on later than the 25 reversal module comprises: DUT for a first time interval and the switching device a third capacitor C₃ having a first terminal connected to is turned off earlier than the DUT for a second time a second input of the driving module and a second interval, terminal connected to a GND node for coupling to a wherein the generation of the second control signal com-ground potential; prising: 30 a fourth resistor R₄ having a first terminal connected to a generating, by a first delay module, a driver input signal VCC node for coupling to a DC power supply; based on the first control signal; a fifth resistor R₅ having a first terminal connected to a generating, by a second delay module and a level second terminal of the fourth resistor R₄ and a second reversal module, an enabling signal based on the first terminal connected to the GND node; control signal; 35 a sixth resistor R₆ having a first terminal connected to the generating, by a driving module, the second control first terminal of the fifth resistor R₅ and a second signal based on the driver input signal and the terminal connected to the second input of the driving enabling signal. module; and
The method according to claim 11, wherein the level absorption circuit module comprises: 45 reversal module comprises: a fourth diode D₄ having a first terminal connected to the a transistor having a collector terminal connected to a second terminal of the switching element; second input of the driving module, a base terminal an eighth resistor R₈ having a first terminal connected to connected to the first terminal of the second capacitor a second terminal of the fourth diode D₄ and a second C2; terminal connected to the second output node; and 50 a fourth resistor R₄ having a first terminal connected to an a fourth capacitor C₄ connected in parallel with the eighth emitter terminal of the transistor and a second terminal resistor R8. connected to a VCC node for coupling to a DC power
Layer stacks claimed or described, ordered top of device to substrate.
dynamic on-resistance measuring apparatus for GaN-based DUT
No layer stack recorded.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 depicts waveforms of electrical signals in measur- ing dynamic on-resistance of a GaN-based device under test (DUT) according to an embodiment of the …
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
Cited non-patent literature · 1
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US 11,747,390 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 depicts a dynamic on-resistance measuring circuit according to a comparative embodiment of the subject application;
FIG. 2 depicts a dynamic on-resistance measuring circuit according to another comparative embodiment of the subject application;
FIG. 3 depicts a block diagram of a dynamic on-resistance measuring apparatus and how it is implemented to measure on-resistance of a GaN-based device under …
FIG. 4 depicts waveforms of electrical signals in measur- ing dynamic on-resistance of a GaN-based device under test (DUT) according to an embodiment of the …
FIG. 5 depicts a more detailed block diagram of the dynamic on-resistance measuring apparatus according to an embodiment of the subject application;
FIG. 6 depicts a circuit diagram of the dynamic on- resistance measuring apparatus according to an embodiment of the subject application;
FIG. 7 depicts a circuit diagram of a dynamic on-resis- tance measuring apparatus according to another embodi- ment of the subject application;
FIG. 8 depicts a flow chart of a method for measuring dynamic on-resistance of a GaN-based device under test (DUT) according to some embodiments of the subject …
FIG. 9 depicts a flowchart of the step of generating the second control signal based on the first control signal according to some embodiments of the subject …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus for measuring dynamic on-resistance of a GaN-based device under test (DUT) comprising a first power terminal electrically connected to a first output node of a power supply, a second power terminal electrically connected to a second input node of the power supply, and a control terminal connected to an output of a first control-ling module being configured to generate a first control signal to switch on and off the DUT, the apparatus compris-ing: an input interface comprising a first input node configured for being electrically connected to the first power terminal of the DUT, a second input node configured for being electrically connected to the second power terminal of the DUT, and a control input node config-ured for being electrically connected to the output of the first controlling module; an output interface comprising a first output node config-ured for being electrically connected to a first signal input node of an electrical signal monitoring equipment and a second output node connected to the second input node and configured for being electrically connected to a second signal input node of the electrical signal monitoring equipment; a switching device comprising a control terminal, a first power terminal electrically connected to the first input node, and a second power terminal electrically coupled to the first output node through an impedance matching module and coupled to the second output node through a noise absorption circuit module; 20 a second controlling module comprising an input terminal electrically connected to the control input node and an output terminal electrically connected to the control terminal of the switching device; and being configured to: receive the first control signal from the first controlling module; and generate a second control signal to switch on and off the switching device such that the switching device is turned on later than the DUT for a first time interval and turned off earlier than the DUT for a second time interval, wherein the second controlling module comprises: a driving module configured to receive a driver input signal and an enabling signal, and generate the second control signal to switch on and off the switch-ing element; a first delay module configured to receive the first control signal and generate the driver input signal to the driving module; a second delay module configured to receive the first control signal; and a level reversal module connected to the second delay module and configured to generate the enabling signal to the driving module.
The apparatus according to claim 1, wherein the impedance matching module comprises a seventh resistor R₇ having a first terminal connected to the second terminal of the switching element and a second terminal connected to the first output node.
The apparatus according to claim 1, wherein the absorption circuit module comprises: a fourth diode D₄ having a first terminal connected to the second terminal of the switching element; an eighth resistor R₈ having a first terminal connected to a second terminal of the fourth diode D₄ and a second terminal connected to the second output node; and a fourth capacitor C₄ connected in parallel with the eighth resistor R8.
The apparatus according to claim 1, wherein the switching element is high electron mobility transistor (HEMT) device.
The apparatus according to claim 1, wherein the first delay module comprises: a first capacitor C₁ having a first terminal connected to a first input of the driving module and a second terminal connected to a GND node for coupling to a ground potential; a first diode D₁ having a cathode connected to the control input node and an anode connected to a first terminal of the first capacitor C1; and a first resistor R₁ is connected in parallel with the first diode D1.
The apparatus according to claim 1, wherein the second delay module comprises: a second capacitor C₂ having a first terminal connected to an input of the level reversal module and a second terminal connected to a GND node; a second diode D₂ having an anode connected to the control input node; a second resistor R₂ having a first terminal connected to a cathode of the second diode D₂ and a second terminal connected to the first terminal of the second capacitor C2; a third diode D₃ having a cathode connected to the control input node; and a third resistor R₃ having a first terminal connected to an anode of the third diode D₃ and a second terminal connected to the first terminal of the second capacitor C2.
The apparatus according to claim 1, wherein the level reversal module comprises: a third capacitor C₃ having a first terminal connected to a second input of the driving module and a second terminal connected to a GND node for coupling to a ground potential; a fourth resistor R₄ having a first terminal connected to a VCC node for coupling to a DC power supply; a fifth resistor R₅ having a first terminal connected to a second terminal of the fourth resistor R₄ and a second terminal connected to the GND node; a sixth resistor R₆ having a first terminal connected to the first terminal of the fifth resistor R₅ and a second terminal connected to the second input of the driving module; and a comparator having a negative input connected to the first terminal of the second capacitor C2, a positive input connected to the second terminal of the fourth resistor R4, and an output connected to the second input of the driving module.
The apparatus according to claim 1, wherein the level reversal module comprises: a transistor having a collector terminal connected to a second input of the driving module, a base terminal connected to the first terminal of the second capacitor C2; a fourth resistor R₄ having a first terminal connected to an emitter terminal of the transistor and a second terminal connected to a VCC node for coupling to a DC power supply; a fifth resistor R₅ having a first terminal connected to the emitter terminal of the transistor and a second terminal connected to a GND node for coupling to a ground potential; and a sixth resistor R₆ having a first terminal connected to the second input of the driving module and a second terminal connected to the VCC node.
A method for measuring dynamic on-resistance of a GaN-based device under test (DUT) having a first power terminal, a second power terminal and a control terminal, the method comprising: 11 12 connecting the first power terminal of the DUT to a first a first diode D₁ having a cathode connected to the control output node of a power supply, the second power input node and an anode connected to a first terminal of terminal of the DUT to a second output node of the first capacitor C1; and power supply, and the control terminal of the DUT to a first resistor R₁ is connected in parallel with the first an output of a first controlling module, respectively; 5 diode D1. connecting a first power terminal of a switching device to
The method according to claim 11, wherein the second the first power terminal of the DUT; delay module comprises: coupling a second power terminal of the switching device a second capacitor C₂ having a first terminal connected to a first signal input node of an electrical signal an input of the level reversal module and a second monitoring equipment through an impedance matching 10 terminal connected to a GND node for coupling to a module; ground potential; coupling the second power terminal of the switching a second diode D₂ having an anode connected to the device to the second input node through a noise absorp-control input node; tion circuit module; a second resistor R₂ having a first terminal connected to connecting the output of the first controlling module to an 15 a cathode of the second diode D₂ and a second terminal input of a second controlling module; connected to the first terminal of the second capacitor connecting a control terminal of the switching device to C2; an output of the second controlling module; a third diode D₃ having a cathode connected to the control generating, by the first controlling module, a first control input node; and signal to switch on and off the DUT; 20 a third resistor R₃ having a first terminal connected to an receiving, by the second controlling module, the first anode of the third diode D₃ and a second terminal control signal from the first controlling module; and connected to the first terminal of the second capacitor generating, by the second controlling module, a second C2. control signal to switch on and off the switching device
The method according to claim 11, wherein the level such that the switching device is turned on later than the 25 reversal module comprises: DUT for a first time interval and the switching device a third capacitor C₃ having a first terminal connected to is turned off earlier than the DUT for a second time a second input of the driving module and a second interval, terminal connected to a GND node for coupling to a wherein the generation of the second control signal com-ground potential; prising: 30 a fourth resistor R₄ having a first terminal connected to a generating, by a first delay module, a driver input signal VCC node for coupling to a DC power supply; based on the first control signal; a fifth resistor R₅ having a first terminal connected to a generating, by a second delay module and a level second terminal of the fourth resistor R₄ and a second reversal module, an enabling signal based on the first terminal connected to the GND node; control signal; 35 a sixth resistor R₆ having a first terminal connected to the generating, by a driving module, the second control first terminal of the fifth resistor R₅ and a second signal based on the driver input signal and the terminal connected to the second input of the driving enabling signal. module; and
The method according to claim 11, wherein the level absorption circuit module comprises: 45 reversal module comprises: a fourth diode D₄ having a first terminal connected to the a transistor having a collector terminal connected to a second terminal of the switching element; second input of the driving module, a base terminal an eighth resistor R₈ having a first terminal connected to connected to the first terminal of the second capacitor a second terminal of the fourth diode D₄ and a second C2; terminal connected to the second output node; and 50 a fourth resistor R₄ having a first terminal connected to an a fourth capacitor C₄ connected in parallel with the eighth emitter terminal of the transistor and a second terminal resistor R8. connected to a VCC node for coupling to a DC power
Layer stacks claimed or described, ordered top of device to substrate.
dynamic on-resistance measuring apparatus for GaN-based DUT
No layer stack recorded.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 depicts waveforms of electrical signals in measur- ing dynamic on-resistance of a GaN-based device under test (DUT) according to an embodiment of the …
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
Cited non-patent literature · 1
Related documents with shared materials, methods, properties, or citations.
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US 11,747,390 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 depicts a dynamic on-resistance measuring circuit according to a comparative embodiment of the subject application;
FIG. 2 depicts a dynamic on-resistance measuring circuit according to another comparative embodiment of the subject application;
FIG. 3 depicts a block diagram of a dynamic on-resistance measuring apparatus and how it is implemented to measure on-resistance of a GaN-based device under …
FIG. 4 depicts waveforms of electrical signals in measur- ing dynamic on-resistance of a GaN-based device under test (DUT) according to an embodiment of the …
FIG. 5 depicts a more detailed block diagram of the dynamic on-resistance measuring apparatus according to an embodiment of the subject application;
FIG. 6 depicts a circuit diagram of the dynamic on- resistance measuring apparatus according to an embodiment of the subject application;
FIG. 7 depicts a circuit diagram of a dynamic on-resis- tance measuring apparatus according to another embodi- ment of the subject application;
FIG. 8 depicts a flow chart of a method for measuring dynamic on-resistance of a GaN-based device under test (DUT) according to some embodiments of the subject …
FIG. 9 depicts a flowchart of the step of generating the second control signal based on the first control signal according to some embodiments of the subject …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus for measuring dynamic on-resistance of a GaN-based device under test (DUT) comprising a first power terminal electrically connected to a first output node of a power supply, a second power terminal electrically connected to a second input node of the power supply, and a control terminal connected to an output of a first control-ling module being configured to generate a first control signal to switch on and off the DUT, the apparatus compris-ing: an input interface comprising a first input node configured for being electrically connected to the first power terminal of the DUT, a second input node configured for being electrically connected to the second power terminal of the DUT, and a control input node config-ured for being electrically connected to the output of the first controlling module; an output interface comprising a first output node config-ured for being electrically connected to a first signal input node of an electrical signal monitoring equipment and a second output node connected to the second input node and configured for being electrically connected to a second signal input node of the electrical signal monitoring equipment; a switching device comprising a control terminal, a first power terminal electrically connected to the first input node, and a second power terminal electrically coupled to the first output node through an impedance matching module and coupled to the second output node through a noise absorption circuit module; 20 a second controlling module comprising an input terminal electrically connected to the control input node and an output terminal electrically connected to the control terminal of the switching device; and being configured to: receive the first control signal from the first controlling module; and generate a second control signal to switch on and off the switching device such that the switching device is turned on later than the DUT for a first time interval and turned off earlier than the DUT for a second time interval, wherein the second controlling module comprises: a driving module configured to receive a driver input signal and an enabling signal, and generate the second control signal to switch on and off the switch-ing element; a first delay module configured to receive the first control signal and generate the driver input signal to the driving module; a second delay module configured to receive the first control signal; and a level reversal module connected to the second delay module and configured to generate the enabling signal to the driving module.
The apparatus according to claim 1, wherein the impedance matching module comprises a seventh resistor R₇ having a first terminal connected to the second terminal of the switching element and a second terminal connected to the first output node.
The apparatus according to claim 1, wherein the absorption circuit module comprises: a fourth diode D₄ having a first terminal connected to the second terminal of the switching element; an eighth resistor R₈ having a first terminal connected to a second terminal of the fourth diode D₄ and a second terminal connected to the second output node; and a fourth capacitor C₄ connected in parallel with the eighth resistor R8.
The apparatus according to claim 1, wherein the switching element is high electron mobility transistor (HEMT) device.
The apparatus according to claim 1, wherein the first delay module comprises: a first capacitor C₁ having a first terminal connected to a first input of the driving module and a second terminal connected to a GND node for coupling to a ground potential; a first diode D₁ having a cathode connected to the control input node and an anode connected to a first terminal of the first capacitor C1; and a first resistor R₁ is connected in parallel with the first diode D1.
The apparatus according to claim 1, wherein the second delay module comprises: a second capacitor C₂ having a first terminal connected to an input of the level reversal module and a second terminal connected to a GND node; a second diode D₂ having an anode connected to the control input node; a second resistor R₂ having a first terminal connected to a cathode of the second diode D₂ and a second terminal connected to the first terminal of the second capacitor C2; a third diode D₃ having a cathode connected to the control input node; and a third resistor R₃ having a first terminal connected to an anode of the third diode D₃ and a second terminal connected to the first terminal of the second capacitor C2.
The apparatus according to claim 1, wherein the level reversal module comprises: a third capacitor C₃ having a first terminal connected to a second input of the driving module and a second terminal connected to a GND node for coupling to a ground potential; a fourth resistor R₄ having a first terminal connected to a VCC node for coupling to a DC power supply; a fifth resistor R₅ having a first terminal connected to a second terminal of the fourth resistor R₄ and a second terminal connected to the GND node; a sixth resistor R₆ having a first terminal connected to the first terminal of the fifth resistor R₅ and a second terminal connected to the second input of the driving module; and a comparator having a negative input connected to the first terminal of the second capacitor C2, a positive input connected to the second terminal of the fourth resistor R4, and an output connected to the second input of the driving module.
The apparatus according to claim 1, wherein the level reversal module comprises: a transistor having a collector terminal connected to a second input of the driving module, a base terminal connected to the first terminal of the second capacitor C2; a fourth resistor R₄ having a first terminal connected to an emitter terminal of the transistor and a second terminal connected to a VCC node for coupling to a DC power supply; a fifth resistor R₅ having a first terminal connected to the emitter terminal of the transistor and a second terminal connected to a GND node for coupling to a ground potential; and a sixth resistor R₆ having a first terminal connected to the second input of the driving module and a second terminal connected to the VCC node.
A method for measuring dynamic on-resistance of a GaN-based device under test (DUT) having a first power terminal, a second power terminal and a control terminal, the method comprising: 11 12 connecting the first power terminal of the DUT to a first a first diode D₁ having a cathode connected to the control output node of a power supply, the second power input node and an anode connected to a first terminal of terminal of the DUT to a second output node of the first capacitor C1; and power supply, and the control terminal of the DUT to a first resistor R₁ is connected in parallel with the first an output of a first controlling module, respectively; 5 diode D1. connecting a first power terminal of a switching device to
The method according to claim 11, wherein the second the first power terminal of the DUT; delay module comprises: coupling a second power terminal of the switching device a second capacitor C₂ having a first terminal connected to a first signal input node of an electrical signal an input of the level reversal module and a second monitoring equipment through an impedance matching 10 terminal connected to a GND node for coupling to a module; ground potential; coupling the second power terminal of the switching a second diode D₂ having an anode connected to the device to the second input node through a noise absorp-control input node; tion circuit module; a second resistor R₂ having a first terminal connected to connecting the output of the first controlling module to an 15 a cathode of the second diode D₂ and a second terminal input of a second controlling module; connected to the first terminal of the second capacitor connecting a control terminal of the switching device to C2; an output of the second controlling module; a third diode D₃ having a cathode connected to the control generating, by the first controlling module, a first control input node; and signal to switch on and off the DUT; 20 a third resistor R₃ having a first terminal connected to an receiving, by the second controlling module, the first anode of the third diode D₃ and a second terminal control signal from the first controlling module; and connected to the first terminal of the second capacitor generating, by the second controlling module, a second C2. control signal to switch on and off the switching device
The method according to claim 11, wherein the level such that the switching device is turned on later than the 25 reversal module comprises: DUT for a first time interval and the switching device a third capacitor C₃ having a first terminal connected to is turned off earlier than the DUT for a second time a second input of the driving module and a second interval, terminal connected to a GND node for coupling to a wherein the generation of the second control signal com-ground potential; prising: 30 a fourth resistor R₄ having a first terminal connected to a generating, by a first delay module, a driver input signal VCC node for coupling to a DC power supply; based on the first control signal; a fifth resistor R₅ having a first terminal connected to a generating, by a second delay module and a level second terminal of the fourth resistor R₄ and a second reversal module, an enabling signal based on the first terminal connected to the GND node; control signal; 35 a sixth resistor R₆ having a first terminal connected to the generating, by a driving module, the second control first terminal of the fifth resistor R₅ and a second signal based on the driver input signal and the terminal connected to the second input of the driving enabling signal. module; and
The method according to claim 11, wherein the level absorption circuit module comprises: 45 reversal module comprises: a fourth diode D₄ having a first terminal connected to the a transistor having a collector terminal connected to a second terminal of the switching element; second input of the driving module, a base terminal an eighth resistor R₈ having a first terminal connected to connected to the first terminal of the second capacitor a second terminal of the fourth diode D₄ and a second C2; terminal connected to the second output node; and 50 a fourth resistor R₄ having a first terminal connected to an a fourth capacitor C₄ connected in parallel with the eighth emitter terminal of the transistor and a second terminal resistor R8. connected to a VCC node for coupling to a DC power
Layer stacks claimed or described, ordered top of device to substrate.
dynamic on-resistance measuring apparatus for GaN-based DUT
No layer stack recorded.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 depicts waveforms of electrical signals in measur- ing dynamic on-resistance of a GaN-based device under test (DUT) according to an embodiment of the …
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
Cited non-patent literature · 1
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
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US 11,747,390 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 depicts a dynamic on-resistance measuring circuit according to a comparative embodiment of the subject application;
FIG. 2 depicts a dynamic on-resistance measuring circuit according to another comparative embodiment of the subject application;
FIG. 3 depicts a block diagram of a dynamic on-resistance measuring apparatus and how it is implemented to measure on-resistance of a GaN-based device under …
FIG. 4 depicts waveforms of electrical signals in measur- ing dynamic on-resistance of a GaN-based device under test (DUT) according to an embodiment of the …
FIG. 5 depicts a more detailed block diagram of the dynamic on-resistance measuring apparatus according to an embodiment of the subject application;
FIG. 6 depicts a circuit diagram of the dynamic on- resistance measuring apparatus according to an embodiment of the subject application;
FIG. 7 depicts a circuit diagram of a dynamic on-resis- tance measuring apparatus according to another embodi- ment of the subject application;
FIG. 8 depicts a flow chart of a method for measuring dynamic on-resistance of a GaN-based device under test (DUT) according to some embodiments of the subject …
FIG. 9 depicts a flowchart of the step of generating the second control signal based on the first control signal according to some embodiments of the subject …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus for measuring dynamic on-resistance of a GaN-based device under test (DUT) comprising a first power terminal electrically connected to a first output node of a power supply, a second power terminal electrically connected to a second input node of the power supply, and a control terminal connected to an output of a first control-ling module being configured to generate a first control signal to switch on and off the DUT, the apparatus compris-ing: an input interface comprising a first input node configured for being electrically connected to the first power terminal of the DUT, a second input node configured for being electrically connected to the second power terminal of the DUT, and a control input node config-ured for being electrically connected to the output of the first controlling module; an output interface comprising a first output node config-ured for being electrically connected to a first signal input node of an electrical signal monitoring equipment and a second output node connected to the second input node and configured for being electrically connected to a second signal input node of the electrical signal monitoring equipment; a switching device comprising a control terminal, a first power terminal electrically connected to the first input node, and a second power terminal electrically coupled to the first output node through an impedance matching module and coupled to the second output node through a noise absorption circuit module; 20 a second controlling module comprising an input terminal electrically connected to the control input node and an output terminal electrically connected to the control terminal of the switching device; and being configured to: receive the first control signal from the first controlling module; and generate a second control signal to switch on and off the switching device such that the switching device is turned on later than the DUT for a first time interval and turned off earlier than the DUT for a second time interval, wherein the second controlling module comprises: a driving module configured to receive a driver input signal and an enabling signal, and generate the second control signal to switch on and off the switch-ing element; a first delay module configured to receive the first control signal and generate the driver input signal to the driving module; a second delay module configured to receive the first control signal; and a level reversal module connected to the second delay module and configured to generate the enabling signal to the driving module.
The apparatus according to claim 1, wherein the impedance matching module comprises a seventh resistor R₇ having a first terminal connected to the second terminal of the switching element and a second terminal connected to the first output node.
The apparatus according to claim 1, wherein the absorption circuit module comprises: a fourth diode D₄ having a first terminal connected to the second terminal of the switching element; an eighth resistor R₈ having a first terminal connected to a second terminal of the fourth diode D₄ and a second terminal connected to the second output node; and a fourth capacitor C₄ connected in parallel with the eighth resistor R8.
The apparatus according to claim 1, wherein the switching element is high electron mobility transistor (HEMT) device.
The apparatus according to claim 1, wherein the first delay module comprises: a first capacitor C₁ having a first terminal connected to a first input of the driving module and a second terminal connected to a GND node for coupling to a ground potential; a first diode D₁ having a cathode connected to the control input node and an anode connected to a first terminal of the first capacitor C1; and a first resistor R₁ is connected in parallel with the first diode D1.
The apparatus according to claim 1, wherein the second delay module comprises: a second capacitor C₂ having a first terminal connected to an input of the level reversal module and a second terminal connected to a GND node; a second diode D₂ having an anode connected to the control input node; a second resistor R₂ having a first terminal connected to a cathode of the second diode D₂ and a second terminal connected to the first terminal of the second capacitor C2; a third diode D₃ having a cathode connected to the control input node; and a third resistor R₃ having a first terminal connected to an anode of the third diode D₃ and a second terminal connected to the first terminal of the second capacitor C2.
The apparatus according to claim 1, wherein the level reversal module comprises: a third capacitor C₃ having a first terminal connected to a second input of the driving module and a second terminal connected to a GND node for coupling to a ground potential; a fourth resistor R₄ having a first terminal connected to a VCC node for coupling to a DC power supply; a fifth resistor R₅ having a first terminal connected to a second terminal of the fourth resistor R₄ and a second terminal connected to the GND node; a sixth resistor R₆ having a first terminal connected to the first terminal of the fifth resistor R₅ and a second terminal connected to the second input of the driving module; and a comparator having a negative input connected to the first terminal of the second capacitor C2, a positive input connected to the second terminal of the fourth resistor R4, and an output connected to the second input of the driving module.
The apparatus according to claim 1, wherein the level reversal module comprises: a transistor having a collector terminal connected to a second input of the driving module, a base terminal connected to the first terminal of the second capacitor C2; a fourth resistor R₄ having a first terminal connected to an emitter terminal of the transistor and a second terminal connected to a VCC node for coupling to a DC power supply; a fifth resistor R₅ having a first terminal connected to the emitter terminal of the transistor and a second terminal connected to a GND node for coupling to a ground potential; and a sixth resistor R₆ having a first terminal connected to the second input of the driving module and a second terminal connected to the VCC node.
A method for measuring dynamic on-resistance of a GaN-based device under test (DUT) having a first power terminal, a second power terminal and a control terminal, the method comprising: 11 12 connecting the first power terminal of the DUT to a first a first diode D₁ having a cathode connected to the control output node of a power supply, the second power input node and an anode connected to a first terminal of terminal of the DUT to a second output node of the first capacitor C1; and power supply, and the control terminal of the DUT to a first resistor R₁ is connected in parallel with the first an output of a first controlling module, respectively; 5 diode D1. connecting a first power terminal of a switching device to
The method according to claim 11, wherein the second the first power terminal of the DUT; delay module comprises: coupling a second power terminal of the switching device a second capacitor C₂ having a first terminal connected to a first signal input node of an electrical signal an input of the level reversal module and a second monitoring equipment through an impedance matching 10 terminal connected to a GND node for coupling to a module; ground potential; coupling the second power terminal of the switching a second diode D₂ having an anode connected to the device to the second input node through a noise absorp-control input node; tion circuit module; a second resistor R₂ having a first terminal connected to connecting the output of the first controlling module to an 15 a cathode of the second diode D₂ and a second terminal input of a second controlling module; connected to the first terminal of the second capacitor connecting a control terminal of the switching device to C2; an output of the second controlling module; a third diode D₃ having a cathode connected to the control generating, by the first controlling module, a first control input node; and signal to switch on and off the DUT; 20 a third resistor R₃ having a first terminal connected to an receiving, by the second controlling module, the first anode of the third diode D₃ and a second terminal control signal from the first controlling module; and connected to the first terminal of the second capacitor generating, by the second controlling module, a second C2. control signal to switch on and off the switching device
The method according to claim 11, wherein the level such that the switching device is turned on later than the 25 reversal module comprises: DUT for a first time interval and the switching device a third capacitor C₃ having a first terminal connected to is turned off earlier than the DUT for a second time a second input of the driving module and a second interval, terminal connected to a GND node for coupling to a wherein the generation of the second control signal com-ground potential; prising: 30 a fourth resistor R₄ having a first terminal connected to a generating, by a first delay module, a driver input signal VCC node for coupling to a DC power supply; based on the first control signal; a fifth resistor R₅ having a first terminal connected to a generating, by a second delay module and a level second terminal of the fourth resistor R₄ and a second reversal module, an enabling signal based on the first terminal connected to the GND node; control signal; 35 a sixth resistor R₆ having a first terminal connected to the generating, by a driving module, the second control first terminal of the fifth resistor R₅ and a second signal based on the driver input signal and the terminal connected to the second input of the driving enabling signal. module; and
The method according to claim 11, wherein the level absorption circuit module comprises: 45 reversal module comprises: a fourth diode D₄ having a first terminal connected to the a transistor having a collector terminal connected to a second terminal of the switching element; second input of the driving module, a base terminal an eighth resistor R₈ having a first terminal connected to connected to the first terminal of the second capacitor a second terminal of the fourth diode D₄ and a second C2; terminal connected to the second output node; and 50 a fourth resistor R₄ having a first terminal connected to an a fourth capacitor C₄ connected in parallel with the eighth emitter terminal of the transistor and a second terminal resistor R8. connected to a VCC node for coupling to a DC power
Layer stacks claimed or described, ordered top of device to substrate.
dynamic on-resistance measuring apparatus for GaN-based DUT
No layer stack recorded.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 depicts waveforms of electrical signals in measur- ing dynamic on-resistance of a GaN-based device under test (DUT) according to an embodiment of the …
Patents and literature cited by this patent (applicant and examiner references).
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