Patent
US 10,199,487MULTI-DRAIN GALLIUM-NITRIDE MODULE WITH MULTIPLE VOLTAGE RATINGS
Noureldeen Elsayad
US
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US 10,199,487Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1(b) shows a module package of a two-die MD-GaN power module according to an embodiment of the subject invention.
Figure 2(a) shows a circuit of a three-die MD-GaN power module according to an embodiment of the subject invention.
Figure 3(a) shows a circuit of a four-die MD-GaN power module according to an embodiment of the subject invention.
Figure 4 shows an internal structure of a four-die MD-GaN power module according to an embodiment of the subject invention.
Figure 5(a) shows a circuit of an N-die MD-GaN power module according to an embodiment of the subject invention.
Figure 6 shows two GaN transistor dies and a series-switch-driver (SSD) of a two-die MD-GaN power module according to an embodiment of the subject invention.
Figure 7 shows N GaN transistor dies and a series-switch-driver (SSD) of an N-die M D-GaN power module according to an embodiment of the subject invention.
Figure 8(a) shows a connection diagram of a bi-directional boost DC-DC converter according to an embodiment of the subject invention.
Figure 9(a) shows a connection diagram of a single-phase VSI assisted with buck converter according to an embodiment of the subject invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Potential Amendment) A multi-drain power module, comprising: a first gallium-nitride (GaN) transistor die including a first source, a first gate, and a first drain; a second GaN transistor die including a second source, a second gate, and a second drain, the second source being connected to the first drain; a first ferrite bead (FB) onnected between a first gate intermediate terminal and the first gate; a first driver connected between a first gate input terminal and the first gate intermediate terminal; a second FB connected between a second gate intermediate terminal and the second gate; a second driver connected between a second gate input terminal and the second gate intermediate terminal; a-exactly one gate terminal connected to the first gate input terminal; a source terminal connected to the first source; a first drain terminal connected to the first drain; a second drain terminal connected to the second drain; and a package encapsulating the first and second GaN transistor dies, and exposing the first and second drain terminals, the one gate terminal, and the source terminal, the first gate an d the second gate bein g configured to be electrically coupled with the o ne gat e t erminal.
Layer stacks claimed or described, ordered top of device to substrate.
multi-drain GaN power module
two-die MD-GaN power module
Materials described outside the worked examples.
gallium nitride (GaN)
GaN
Measurements and analyses referenced in the patent, with their drawing references.
Figure 6 shows two GaN transistor dies and a series-switch-driver (SSD) of a two-die MD-GaN power module according to an embodiment of the subject invention.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,199,487Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1(b) shows a module package of a two-die MD-GaN power module according to an embodiment of the subject invention.
Figure 2(a) shows a circuit of a three-die MD-GaN power module according to an embodiment of the subject invention.
Figure 3(a) shows a circuit of a four-die MD-GaN power module according to an embodiment of the subject invention.
Figure 4 shows an internal structure of a four-die MD-GaN power module according to an embodiment of the subject invention.
Figure 5(a) shows a circuit of an N-die MD-GaN power module according to an embodiment of the subject invention.
Figure 6 shows two GaN transistor dies and a series-switch-driver (SSD) of a two-die MD-GaN power module according to an embodiment of the subject invention.
Figure 7 shows N GaN transistor dies and a series-switch-driver (SSD) of an N-die M D-GaN power module according to an embodiment of the subject invention.
Figure 8(a) shows a connection diagram of a bi-directional boost DC-DC converter according to an embodiment of the subject invention.
Figure 9(a) shows a connection diagram of a single-phase VSI assisted with buck converter according to an embodiment of the subject invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Potential Amendment) A multi-drain power module, comprising: a first gallium-nitride (GaN) transistor die including a first source, a first gate, and a first drain; a second GaN transistor die including a second source, a second gate, and a second drain, the second source being connected to the first drain; a first ferrite bead (FB) onnected between a first gate intermediate terminal and the first gate; a first driver connected between a first gate input terminal and the first gate intermediate terminal; a second FB connected between a second gate intermediate terminal and the second gate; a second driver connected between a second gate input terminal and the second gate intermediate terminal; a-exactly one gate terminal connected to the first gate input terminal; a source terminal connected to the first source; a first drain terminal connected to the first drain; a second drain terminal connected to the second drain; and a package encapsulating the first and second GaN transistor dies, and exposing the first and second drain terminals, the one gate terminal, and the source terminal, the first gate an d the second gate bein g configured to be electrically coupled with the o ne gat e t erminal.
Layer stacks claimed or described, ordered top of device to substrate.
multi-drain GaN power module
two-die MD-GaN power module
Materials described outside the worked examples.
gallium nitride (GaN)
GaN
Measurements and analyses referenced in the patent, with their drawing references.
Figure 6 shows two GaN transistor dies and a series-switch-driver (SSD) of a two-die MD-GaN power module according to an embodiment of the subject invention.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,199,487Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1(b) shows a module package of a two-die MD-GaN power module according to an embodiment of the subject invention.
Figure 2(a) shows a circuit of a three-die MD-GaN power module according to an embodiment of the subject invention.
Figure 3(a) shows a circuit of a four-die MD-GaN power module according to an embodiment of the subject invention.
Figure 4 shows an internal structure of a four-die MD-GaN power module according to an embodiment of the subject invention.
Figure 5(a) shows a circuit of an N-die MD-GaN power module according to an embodiment of the subject invention.
Figure 6 shows two GaN transistor dies and a series-switch-driver (SSD) of a two-die MD-GaN power module according to an embodiment of the subject invention.
Figure 7 shows N GaN transistor dies and a series-switch-driver (SSD) of an N-die M D-GaN power module according to an embodiment of the subject invention.
Figure 8(a) shows a connection diagram of a bi-directional boost DC-DC converter according to an embodiment of the subject invention.
Figure 9(a) shows a connection diagram of a single-phase VSI assisted with buck converter according to an embodiment of the subject invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Potential Amendment) A multi-drain power module, comprising: a first gallium-nitride (GaN) transistor die including a first source, a first gate, and a first drain; a second GaN transistor die including a second source, a second gate, and a second drain, the second source being connected to the first drain; a first ferrite bead (FB) onnected between a first gate intermediate terminal and the first gate; a first driver connected between a first gate input terminal and the first gate intermediate terminal; a second FB connected between a second gate intermediate terminal and the second gate; a second driver connected between a second gate input terminal and the second gate intermediate terminal; a-exactly one gate terminal connected to the first gate input terminal; a source terminal connected to the first source; a first drain terminal connected to the first drain; a second drain terminal connected to the second drain; and a package encapsulating the first and second GaN transistor dies, and exposing the first and second drain terminals, the one gate terminal, and the source terminal, the first gate an d the second gate bein g configured to be electrically coupled with the o ne gat e t erminal.
Layer stacks claimed or described, ordered top of device to substrate.
multi-drain GaN power module
two-die MD-GaN power module
Materials described outside the worked examples.
gallium nitride (GaN)
GaN
Measurements and analyses referenced in the patent, with their drawing references.
Figure 6 shows two GaN transistor dies and a series-switch-driver (SSD) of a two-die MD-GaN power module according to an embodiment of the subject invention.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,199,487Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1(b) shows a module package of a two-die MD-GaN power module according to an embodiment of the subject invention.
Figure 2(a) shows a circuit of a three-die MD-GaN power module according to an embodiment of the subject invention.
Figure 3(a) shows a circuit of a four-die MD-GaN power module according to an embodiment of the subject invention.
Figure 4 shows an internal structure of a four-die MD-GaN power module according to an embodiment of the subject invention.
Figure 5(a) shows a circuit of an N-die MD-GaN power module according to an embodiment of the subject invention.
Figure 6 shows two GaN transistor dies and a series-switch-driver (SSD) of a two-die MD-GaN power module according to an embodiment of the subject invention.
Figure 7 shows N GaN transistor dies and a series-switch-driver (SSD) of an N-die M D-GaN power module according to an embodiment of the subject invention.
Figure 8(a) shows a connection diagram of a bi-directional boost DC-DC converter according to an embodiment of the subject invention.
Figure 9(a) shows a connection diagram of a single-phase VSI assisted with buck converter according to an embodiment of the subject invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Potential Amendment) A multi-drain power module, comprising: a first gallium-nitride (GaN) transistor die including a first source, a first gate, and a first drain; a second GaN transistor die including a second source, a second gate, and a second drain, the second source being connected to the first drain; a first ferrite bead (FB) onnected between a first gate intermediate terminal and the first gate; a first driver connected between a first gate input terminal and the first gate intermediate terminal; a second FB connected between a second gate intermediate terminal and the second gate; a second driver connected between a second gate input terminal and the second gate intermediate terminal; a-exactly one gate terminal connected to the first gate input terminal; a source terminal connected to the first source; a first drain terminal connected to the first drain; a second drain terminal connected to the second drain; and a package encapsulating the first and second GaN transistor dies, and exposing the first and second drain terminals, the one gate terminal, and the source terminal, the first gate an d the second gate bein g configured to be electrically coupled with the o ne gat e t erminal.
Layer stacks claimed or described, ordered top of device to substrate.
multi-drain GaN power module
two-die MD-GaN power module
Materials described outside the worked examples.
gallium nitride (GaN)
GaN
Measurements and analyses referenced in the patent, with their drawing references.
Figure 6 shows two GaN transistor dies and a series-switch-driver (SSD) of a two-die MD-GaN power module according to an embodiment of the subject invention.
Related documents with shared materials, methods, properties, or citations.
Figure 7 shows N GaN transistor dies and a series-switch-driver (SSD) of an N-die M D-GaN power module according to an embodiment of the subject invention.
GAN DRIVER USING ACTIVE PRE-DRIVER WITH FEEDBACK
Figure 7 shows N GaN transistor dies and a series-switch-driver (SSD) of an N-die M D-GaN power module according to an embodiment of the subject invention.
GAN DRIVER USING ACTIVE PRE-DRIVER WITH FEEDBACK
Figure 7 shows N GaN transistor dies and a series-switch-driver (SSD) of an N-die M D-GaN power module according to an embodiment of the subject invention.
GAN DRIVER USING ACTIVE PRE-DRIVER WITH FEEDBACK
Figure 7 shows N GaN transistor dies and a series-switch-driver (SSD) of an N-die M D-GaN power module according to an embodiment of the subject invention.