Patent
US 11,038,503GaN DRIVER USING ACTIVE PRE-DRIVER WITH FEEDBACK
Edward Lee
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,038,503Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A-B illustrate schematics of conventional bootstrapping gate drivers. [0018] F I GS. 2A-B illustrate schematics of conventional active pre-drivers. …
FIG. 2A, active pre- driver 220 includes transistor 225 and depletion mode transistor 235. Transistors 285 and 290 comprise output stage 280 of the driver …
FIG. 3 illustrates an active pre-driver according to a first embodiment of the present invention. [0020]
FIG. 4 illustrates an active pre-driver according to a variation of the first embodiment of the present invention. [0021]
FIG. 5 illustrates an active pre-driver with closed loop feedback according to a second embodiment of the present invention. [0022]
FIGS. 6A-B illustrate two closed loop feedback circuits for an active pre-driver according to the second embodiment of the present invention. [0023]
FIG. 7 illustrates an active pre-driver with closed loop feedback and an output stage, according to a third embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gate driver using an active pre-driver with feedback which operates on a single supply voltage, the gate driver comprising the active pre-driver with feedback and a gate driver output stage having a pull-up transistor, the active pre-driver comprising: [[an]] a pre-driver output stage comprising an active pull-up transistor for driving the pull-up transistor of the gate driver output stage, the active pull-up transistor switching between two states to provide an active pre-driver output voltage that switches between a desired voltage level and ground, wherein the desired voltage level is less than the supply voltage; a current source connected to the single supply voltage for generating a voltage to drive the output stage of the active pre-driver; and a feedback circuit connected to the output voltage of the active pre-driver and drawing a feedback current from the current source to maintain the output voltage of the active pre- driver within a predetermined range of the desired voltage level when the active pre- driver output voltage switches to the desired voltage level. Currently amended
The gate driver of claim 1, wherein the output stage of the active pre-driver comprises: a first gallium nitride (GaN) field effect transistor (F ET) having a gate terminal connected to the current source, a drain terminal connected to the single supply voltage, and a source terminal connected to the feedback circuit and to a gate terminal of the pull-up transistor of the gate driver output stage, and a second GaN FET having a gate terminal connected to a control input, a drain terminal connected to the feedback circuit and the gate terminal of the pull-up transistor, and a source terminal connected to ground. Original
The gate driver of claim 1, wherein the current source comprises a resistor connected at one side to the single supply voltage and connected at the other side to the output stage of the active pre-driver. Original
The gate driver of claim 1, wherein the current source comprises a depletion mode GaN FET having a drain terminal connected to the single supply voltage, and a gate terminal and a source terminal connected together and to the output stage of the active pre-driver. Original
The gate driver of claim 1, wherein the feedback circuit comprises a current mirror. Original
The gate driver of claim 1, wherein the feedback circuit comprises a cascode current mirror. Original
The gate driver of claim 1, wherein the active pull-up transistor of the active pre- driver is smaller than the pull-up transistor of the gate driver output stage. New
Claims 8-12. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
GaN gate driver with active pre-driver and feedback
Materials described outside the worked examples.
gallium nitride (GaN) field effect transistor
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2A, active pre- driver 220 includes transistor 225 and depletion mode transistor 235. Transistors 285 and 290 comprise output stage 280 of the driver …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,038,503Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A-B illustrate schematics of conventional bootstrapping gate drivers. [0018] F I GS. 2A-B illustrate schematics of conventional active pre-drivers. …
FIG. 2A, active pre- driver 220 includes transistor 225 and depletion mode transistor 235. Transistors 285 and 290 comprise output stage 280 of the driver …
FIG. 3 illustrates an active pre-driver according to a first embodiment of the present invention. [0020]
FIG. 4 illustrates an active pre-driver according to a variation of the first embodiment of the present invention. [0021]
FIG. 5 illustrates an active pre-driver with closed loop feedback according to a second embodiment of the present invention. [0022]
FIGS. 6A-B illustrate two closed loop feedback circuits for an active pre-driver according to the second embodiment of the present invention. [0023]
FIG. 7 illustrates an active pre-driver with closed loop feedback and an output stage, according to a third embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gate driver using an active pre-driver with feedback which operates on a single supply voltage, the gate driver comprising the active pre-driver with feedback and a gate driver output stage having a pull-up transistor, the active pre-driver comprising: [[an]] a pre-driver output stage comprising an active pull-up transistor for driving the pull-up transistor of the gate driver output stage, the active pull-up transistor switching between two states to provide an active pre-driver output voltage that switches between a desired voltage level and ground, wherein the desired voltage level is less than the supply voltage; a current source connected to the single supply voltage for generating a voltage to drive the output stage of the active pre-driver; and a feedback circuit connected to the output voltage of the active pre-driver and drawing a feedback current from the current source to maintain the output voltage of the active pre- driver within a predetermined range of the desired voltage level when the active pre- driver output voltage switches to the desired voltage level. Currently amended
The gate driver of claim 1, wherein the output stage of the active pre-driver comprises: a first gallium nitride (GaN) field effect transistor (F ET) having a gate terminal connected to the current source, a drain terminal connected to the single supply voltage, and a source terminal connected to the feedback circuit and to a gate terminal of the pull-up transistor of the gate driver output stage, and a second GaN FET having a gate terminal connected to a control input, a drain terminal connected to the feedback circuit and the gate terminal of the pull-up transistor, and a source terminal connected to ground. Original
The gate driver of claim 1, wherein the current source comprises a resistor connected at one side to the single supply voltage and connected at the other side to the output stage of the active pre-driver. Original
The gate driver of claim 1, wherein the current source comprises a depletion mode GaN FET having a drain terminal connected to the single supply voltage, and a gate terminal and a source terminal connected together and to the output stage of the active pre-driver. Original
The gate driver of claim 1, wherein the feedback circuit comprises a current mirror. Original
The gate driver of claim 1, wherein the feedback circuit comprises a cascode current mirror. Original
The gate driver of claim 1, wherein the active pull-up transistor of the active pre- driver is smaller than the pull-up transistor of the gate driver output stage. New
Claims 8-12. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
GaN gate driver with active pre-driver and feedback
Materials described outside the worked examples.
gallium nitride (GaN) field effect transistor
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2A, active pre- driver 220 includes transistor 225 and depletion mode transistor 235. Transistors 285 and 290 comprise output stage 280 of the driver …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,038,503Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A-B illustrate schematics of conventional bootstrapping gate drivers. [0018] F I GS. 2A-B illustrate schematics of conventional active pre-drivers. …
FIG. 2A, active pre- driver 220 includes transistor 225 and depletion mode transistor 235. Transistors 285 and 290 comprise output stage 280 of the driver …
FIG. 3 illustrates an active pre-driver according to a first embodiment of the present invention. [0020]
FIG. 4 illustrates an active pre-driver according to a variation of the first embodiment of the present invention. [0021]
FIG. 5 illustrates an active pre-driver with closed loop feedback according to a second embodiment of the present invention. [0022]
FIGS. 6A-B illustrate two closed loop feedback circuits for an active pre-driver according to the second embodiment of the present invention. [0023]
FIG. 7 illustrates an active pre-driver with closed loop feedback and an output stage, according to a third embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gate driver using an active pre-driver with feedback which operates on a single supply voltage, the gate driver comprising the active pre-driver with feedback and a gate driver output stage having a pull-up transistor, the active pre-driver comprising: [[an]] a pre-driver output stage comprising an active pull-up transistor for driving the pull-up transistor of the gate driver output stage, the active pull-up transistor switching between two states to provide an active pre-driver output voltage that switches between a desired voltage level and ground, wherein the desired voltage level is less than the supply voltage; a current source connected to the single supply voltage for generating a voltage to drive the output stage of the active pre-driver; and a feedback circuit connected to the output voltage of the active pre-driver and drawing a feedback current from the current source to maintain the output voltage of the active pre- driver within a predetermined range of the desired voltage level when the active pre- driver output voltage switches to the desired voltage level. Currently amended
The gate driver of claim 1, wherein the output stage of the active pre-driver comprises: a first gallium nitride (GaN) field effect transistor (F ET) having a gate terminal connected to the current source, a drain terminal connected to the single supply voltage, and a source terminal connected to the feedback circuit and to a gate terminal of the pull-up transistor of the gate driver output stage, and a second GaN FET having a gate terminal connected to a control input, a drain terminal connected to the feedback circuit and the gate terminal of the pull-up transistor, and a source terminal connected to ground. Original
The gate driver of claim 1, wherein the current source comprises a resistor connected at one side to the single supply voltage and connected at the other side to the output stage of the active pre-driver. Original
The gate driver of claim 1, wherein the current source comprises a depletion mode GaN FET having a drain terminal connected to the single supply voltage, and a gate terminal and a source terminal connected together and to the output stage of the active pre-driver. Original
The gate driver of claim 1, wherein the feedback circuit comprises a current mirror. Original
The gate driver of claim 1, wherein the feedback circuit comprises a cascode current mirror. Original
The gate driver of claim 1, wherein the active pull-up transistor of the active pre- driver is smaller than the pull-up transistor of the gate driver output stage. New
Claims 8-12. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
GaN gate driver with active pre-driver and feedback
Materials described outside the worked examples.
gallium nitride (GaN) field effect transistor
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2A, active pre- driver 220 includes transistor 225 and depletion mode transistor 235. Transistors 285 and 290 comprise output stage 280 of the driver …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,038,503Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A-B illustrate schematics of conventional bootstrapping gate drivers. [0018] F I GS. 2A-B illustrate schematics of conventional active pre-drivers. …
FIG. 2A, active pre- driver 220 includes transistor 225 and depletion mode transistor 235. Transistors 285 and 290 comprise output stage 280 of the driver …
FIG. 3 illustrates an active pre-driver according to a first embodiment of the present invention. [0020]
FIG. 4 illustrates an active pre-driver according to a variation of the first embodiment of the present invention. [0021]
FIG. 5 illustrates an active pre-driver with closed loop feedback according to a second embodiment of the present invention. [0022]
FIGS. 6A-B illustrate two closed loop feedback circuits for an active pre-driver according to the second embodiment of the present invention. [0023]
FIG. 7 illustrates an active pre-driver with closed loop feedback and an output stage, according to a third embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gate driver using an active pre-driver with feedback which operates on a single supply voltage, the gate driver comprising the active pre-driver with feedback and a gate driver output stage having a pull-up transistor, the active pre-driver comprising: [[an]] a pre-driver output stage comprising an active pull-up transistor for driving the pull-up transistor of the gate driver output stage, the active pull-up transistor switching between two states to provide an active pre-driver output voltage that switches between a desired voltage level and ground, wherein the desired voltage level is less than the supply voltage; a current source connected to the single supply voltage for generating a voltage to drive the output stage of the active pre-driver; and a feedback circuit connected to the output voltage of the active pre-driver and drawing a feedback current from the current source to maintain the output voltage of the active pre- driver within a predetermined range of the desired voltage level when the active pre- driver output voltage switches to the desired voltage level. Currently amended
The gate driver of claim 1, wherein the output stage of the active pre-driver comprises: a first gallium nitride (GaN) field effect transistor (F ET) having a gate terminal connected to the current source, a drain terminal connected to the single supply voltage, and a source terminal connected to the feedback circuit and to a gate terminal of the pull-up transistor of the gate driver output stage, and a second GaN FET having a gate terminal connected to a control input, a drain terminal connected to the feedback circuit and the gate terminal of the pull-up transistor, and a source terminal connected to ground. Original
The gate driver of claim 1, wherein the current source comprises a resistor connected at one side to the single supply voltage and connected at the other side to the output stage of the active pre-driver. Original
The gate driver of claim 1, wherein the current source comprises a depletion mode GaN FET having a drain terminal connected to the single supply voltage, and a gate terminal and a source terminal connected together and to the output stage of the active pre-driver. Original
The gate driver of claim 1, wherein the feedback circuit comprises a current mirror. Original
The gate driver of claim 1, wherein the feedback circuit comprises a cascode current mirror. Original
The gate driver of claim 1, wherein the active pull-up transistor of the active pre- driver is smaller than the pull-up transistor of the gate driver output stage. New
Claims 8-12. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
GaN gate driver with active pre-driver and feedback
Materials described outside the worked examples.
gallium nitride (GaN) field effect transistor
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2A, active pre- driver 220 includes transistor 225 and depletion mode transistor 235. Transistors 285 and 290 comprise output stage 280 of the driver …
Related documents with shared materials, methods, properties, or citations.
GEOMETRIC MANIPULATION OF 2DEG REGION IN SOURCE/DRAIN EXTENSION OF GAN TRANSISTOR
GEOMETRIC MANIPULATION OF 2DEG REGION IN SOURCE/DRAIN EXTENSION OF GAN TRANSISTOR
GEOMETRIC MANIPULATION OF 2DEG REGION IN SOURCE/DRAIN EXTENSION OF GAN TRANSISTOR
GEOMETRIC MANIPULATION OF 2DEG REGION IN SOURCE/DRAIN EXTENSION OF GAN TRANSISTOR