Patent
US 11,624,114A METHOD AND SYSTEM FOR PRODUCING GRAPHENE ON A COPPER SUBSTRATE BY MODIFIED CHEMICAL VAPOUR DEPOSITION (AP-CVD)
Patricio HÄBERLE TAPIA
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,624,114Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 describes a scheme of the system of the present invention.
Figure 2 describes a copper sheet arrangement for the graphene synthesis of the present invention, with the 532-nm Raman spectra being obtained directly on the inner and outer surfaces of the copper sheets from the synthesis of the present invention.
Figure 3 describes the 514-nm Raman spectrum of graphene grown on one of the copper sheet inner surface.
Figure 4 describes micrographs of graphene as transferred into silicon oxide, wherein graphene mono and bilayer regions based on 532-nm Raman spectra are observed.
Figure 5 describes Raman spectra with a 647-nm wavelength of graphene as grown on one of the copper sheet inner surface, and transferred over a Si O 2/Si substrate.
Figure 6 describes the 488-nm Raman spectrum of graphene on one of the copper sheet inner surface.
Figure 7 describes the 514-nm Raman spectrum of graphene as grown on one of the copper sheet inner surface, and transferred over Si O 2/Si in ten different points of the substrate radially.
Figure 8 shows the time-of-exposure variation of the sheets as a function of 2D/G and Full Width at Half Maximum (FWHM).
Figure 9 shows the temperature variation as a function of FWHM 2D/G.
Figure 10 shows the distance variation in the sheet gap during the synthesis as a function of 2D/G, D/G, and a curve "b" is inserted therein as a function of FWHM.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing graphene on a copper substrate by modified chemical vapor deposition (AP-CVD), comprising: providing two copper sheets [[(40)]] arranged in a parallel manner and separated by a ceramic material [[(30)]]; incorporating said two copper sheets [[(40)]] into an open chamber that is constituted by a glass cylindrical chamber [[(10)]], wherein its axial axis is directed vertically, wherein the glass cylindrical chamber [[(10)]] is totally open in its lower surface [[(15)]]; heating the two copper sheets [[(40)]] by using an electromagnetic induction heater [[(20)]] at a predetermined temperature; providing a mixture of Methane and Argon streams in the upper surface [[(18)]] of said glass cylindrical chamber [[(10)]]; continually monitoring the temperature of the two copper sheets [[(40)]] by using a radiation pyrometer [[(50)]] through a quartz window [[(60)]] arranged in the upper surface [[(18)]] of the glass cylindrical chamber [[(10)]]; heating to about 1,000 0 C. by using an electromagnetic induction heater [[(20)]] for a predetermined period of time; and cooling down to room temperature with the same Methane and Argon streams. Currently amended
The method for producing graphene according to claim 1, wherein the predetermined temperature to heat the two copper sheets [[(40)]] arranged in a parallel manner and separated by a ceramic material [[(30)]] by using the electromagnetic induction heater [[(20)]] is 1,000 0 C. Currently amended
The method for producing graphene according to claim 1, wherein the two circular copper sheets [[(40)]], arranged inside the glass cylindrical chamber [[(10)]], are 30 mm diameter and 0.1 mm thickness with 99. 8 % purity, are also arranged in a parallel, separated manner, and supported by three ceramic pillars [[(30)]], of 3.5 mm diameter and 30 mm long, that are fixed to a base [[(35)]] also made of the same material. Currently amended
The method for producing graphene according to claim 1, wherein the electromagnetic induction heater [[(20)]] consists of a coil,., that externally rolls up at the glass cylindrical chamber [[(10)]], wherein alternate current as generated by a frequency oscillator,, is fed to the coil. Currently amended
The method for producing graphene according to claim 1, wherein prior to their introduction into the glass cylindrical chamber [[(10)]], the two copper sheets [[(40)]] are treated with acetic acid for 2 minutes and rinsed with ethanol. Currently amended
The method for producing graphene according to claim 1, wherein the copper sheets [[(40)]] are kept under Methane and Argon streams of 1.0 L/min and 0.1 L/min, respectively, for 2 minutes. Currently amended
The method for producing graphene according to claim 1, wherein by cooling down with the same Methane and Argon streams, the cooldown reduction is 1,000 0 C. to 600 0 C. in about 5 seconds. Currently amended
The method for producing graphene according to claim 1, wherein the predetermined period of time for heating to about 1000 0 C. by using an electromagnetic induction heater [[(20)]] is 15 minutes. Currently amended
The method for producing graphene according to claim 1, wherein the glass cylindrical chamber [[(10)]] material is Pyrex with a 40 mm diameter and i s 110 mm long. Currently amended
A system for producing graphene on a copper substrate by modified chemical vapor deposition (AP-CVD), comprising two copper sheets [[(40)]] arranged in a parallel manner and separated by a ceramic material [[(40)]]; said two copper sheets [[(40)]] incorporated into an open chamber that is constituted by a glass cylindrical chamber [[(10)]], wherein its axial axis is directed vertically, wherein the glass cylindrical chamber [[(10)]] is totally open in its lower surface [[(15)]]; an electromagnetic induction heater [[(20)]] at a predetermined temperature to heat the two copper sheets [[(40)]] and for a predetermined period of time; a provision of a mixture of Methane and Argon streams in the upper surface [[(18)]] of said glass cylindrical chamber [[(10)]]; and a radiation pyrometer [[(50)]] to continually monitor the temperature of the two copper sheets [[(40)]] through a quartz window [[(60)]] arranged in the upper surface [[(18)]] of the glass cylindrical chamber [[(10)]]. Currently amended
The system for producing graphene according to claim 10, wherein the predetermined temperature to heat the two copper sheets [[(40)]] arranged in a parallel manner and separated by a ceramic material [[(30)]] by using the electromagnetic induction heater [[(20)]] is 1,000 0 C. Currently amended
The system for producing graphene according to claim 10, wherein the two circular copper sheets [[(40)]], arranged inside the glass cylindrical chamber [[(10)]], are 30 mm diameter and 0.1 mm thickness with 99. 8 % purity, are also arranged in a parallel, separated manner, and supported by three ceramic pillars [[(30)]], of 3.5 mm diameter and 30 mm long, that are fixed to a base [[(35)]] also made of the same material. Currently amended
The system for producing graphene according to claim 10, wherein the electromagnetic induction heater [[(20)]] consists of a coil,., that externally rolls up at the glass cylindrical chamber [[(10)]], wherein alternate current as generated by a frequency oscillator,, is fed to the coil. Currently amended
The system for producing graphene according to claim 10, wherein prior to their introduction into the glass cylindrical chamber [[(10)]], the two copper sheets [[(40)]] are treated with acetic acid for 2 minutes and rinsed with ethanol. Currently amended
The system for producing graphene according to claim 10, wherein the provision of the Methane and Argon streams is 1.0 L/min and 0.1 L/min, respectively, for 2 minutes. Currently amended
The system for producing graphene according to claim 10, wherein the predetermined period of time for heating to about 1,000 0 C. by using an electromagnetic induction heater [[(20)]] is 15 minutes. Currently amended
The system for producing graphene according to claim 10, wherein the glass cylindrical
Layer stacks claimed or described, ordered top of device to substrate.
AP-CVD graphene growth system
Materials described outside the worked examples.
copper sheets
Cu
ceramic material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 2 describes a copper sheet arrangement for the graphene synthesis of the present invention, with the 532-nm Raman spectra being obtained directly on the inner and outer surfaces of the copper sheets from the synthesis of the present invention.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.00001 Pa | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,624,114Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 describes a scheme of the system of the present invention.
Figure 2 describes a copper sheet arrangement for the graphene synthesis of the present invention, with the 532-nm Raman spectra being obtained directly on the inner and outer surfaces of the copper sheets from the synthesis of the present invention.
Figure 3 describes the 514-nm Raman spectrum of graphene grown on one of the copper sheet inner surface.
Figure 4 describes micrographs of graphene as transferred into silicon oxide, wherein graphene mono and bilayer regions based on 532-nm Raman spectra are observed.
Figure 5 describes Raman spectra with a 647-nm wavelength of graphene as grown on one of the copper sheet inner surface, and transferred over a Si O 2/Si substrate.
Figure 6 describes the 488-nm Raman spectrum of graphene on one of the copper sheet inner surface.
Figure 7 describes the 514-nm Raman spectrum of graphene as grown on one of the copper sheet inner surface, and transferred over Si O 2/Si in ten different points of the substrate radially.
Figure 8 shows the time-of-exposure variation of the sheets as a function of 2D/G and Full Width at Half Maximum (FWHM).
Figure 9 shows the temperature variation as a function of FWHM 2D/G.
Figure 10 shows the distance variation in the sheet gap during the synthesis as a function of 2D/G, D/G, and a curve "b" is inserted therein as a function of FWHM.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing graphene on a copper substrate by modified chemical vapor deposition (AP-CVD), comprising: providing two copper sheets [[(40)]] arranged in a parallel manner and separated by a ceramic material [[(30)]]; incorporating said two copper sheets [[(40)]] into an open chamber that is constituted by a glass cylindrical chamber [[(10)]], wherein its axial axis is directed vertically, wherein the glass cylindrical chamber [[(10)]] is totally open in its lower surface [[(15)]]; heating the two copper sheets [[(40)]] by using an electromagnetic induction heater [[(20)]] at a predetermined temperature; providing a mixture of Methane and Argon streams in the upper surface [[(18)]] of said glass cylindrical chamber [[(10)]]; continually monitoring the temperature of the two copper sheets [[(40)]] by using a radiation pyrometer [[(50)]] through a quartz window [[(60)]] arranged in the upper surface [[(18)]] of the glass cylindrical chamber [[(10)]]; heating to about 1,000 0 C. by using an electromagnetic induction heater [[(20)]] for a predetermined period of time; and cooling down to room temperature with the same Methane and Argon streams. Currently amended
The method for producing graphene according to claim 1, wherein the predetermined temperature to heat the two copper sheets [[(40)]] arranged in a parallel manner and separated by a ceramic material [[(30)]] by using the electromagnetic induction heater [[(20)]] is 1,000 0 C. Currently amended
The method for producing graphene according to claim 1, wherein the two circular copper sheets [[(40)]], arranged inside the glass cylindrical chamber [[(10)]], are 30 mm diameter and 0.1 mm thickness with 99. 8 % purity, are also arranged in a parallel, separated manner, and supported by three ceramic pillars [[(30)]], of 3.5 mm diameter and 30 mm long, that are fixed to a base [[(35)]] also made of the same material. Currently amended
The method for producing graphene according to claim 1, wherein the electromagnetic induction heater [[(20)]] consists of a coil,., that externally rolls up at the glass cylindrical chamber [[(10)]], wherein alternate current as generated by a frequency oscillator,, is fed to the coil. Currently amended
The method for producing graphene according to claim 1, wherein prior to their introduction into the glass cylindrical chamber [[(10)]], the two copper sheets [[(40)]] are treated with acetic acid for 2 minutes and rinsed with ethanol. Currently amended
The method for producing graphene according to claim 1, wherein the copper sheets [[(40)]] are kept under Methane and Argon streams of 1.0 L/min and 0.1 L/min, respectively, for 2 minutes. Currently amended
The method for producing graphene according to claim 1, wherein by cooling down with the same Methane and Argon streams, the cooldown reduction is 1,000 0 C. to 600 0 C. in about 5 seconds. Currently amended
The method for producing graphene according to claim 1, wherein the predetermined period of time for heating to about 1000 0 C. by using an electromagnetic induction heater [[(20)]] is 15 minutes. Currently amended
The method for producing graphene according to claim 1, wherein the glass cylindrical chamber [[(10)]] material is Pyrex with a 40 mm diameter and i s 110 mm long. Currently amended
A system for producing graphene on a copper substrate by modified chemical vapor deposition (AP-CVD), comprising two copper sheets [[(40)]] arranged in a parallel manner and separated by a ceramic material [[(40)]]; said two copper sheets [[(40)]] incorporated into an open chamber that is constituted by a glass cylindrical chamber [[(10)]], wherein its axial axis is directed vertically, wherein the glass cylindrical chamber [[(10)]] is totally open in its lower surface [[(15)]]; an electromagnetic induction heater [[(20)]] at a predetermined temperature to heat the two copper sheets [[(40)]] and for a predetermined period of time; a provision of a mixture of Methane and Argon streams in the upper surface [[(18)]] of said glass cylindrical chamber [[(10)]]; and a radiation pyrometer [[(50)]] to continually monitor the temperature of the two copper sheets [[(40)]] through a quartz window [[(60)]] arranged in the upper surface [[(18)]] of the glass cylindrical chamber [[(10)]]. Currently amended
The system for producing graphene according to claim 10, wherein the predetermined temperature to heat the two copper sheets [[(40)]] arranged in a parallel manner and separated by a ceramic material [[(30)]] by using the electromagnetic induction heater [[(20)]] is 1,000 0 C. Currently amended
The system for producing graphene according to claim 10, wherein the two circular copper sheets [[(40)]], arranged inside the glass cylindrical chamber [[(10)]], are 30 mm diameter and 0.1 mm thickness with 99. 8 % purity, are also arranged in a parallel, separated manner, and supported by three ceramic pillars [[(30)]], of 3.5 mm diameter and 30 mm long, that are fixed to a base [[(35)]] also made of the same material. Currently amended
The system for producing graphene according to claim 10, wherein the electromagnetic induction heater [[(20)]] consists of a coil,., that externally rolls up at the glass cylindrical chamber [[(10)]], wherein alternate current as generated by a frequency oscillator,, is fed to the coil. Currently amended
The system for producing graphene according to claim 10, wherein prior to their introduction into the glass cylindrical chamber [[(10)]], the two copper sheets [[(40)]] are treated with acetic acid for 2 minutes and rinsed with ethanol. Currently amended
The system for producing graphene according to claim 10, wherein the provision of the Methane and Argon streams is 1.0 L/min and 0.1 L/min, respectively, for 2 minutes. Currently amended
The system for producing graphene according to claim 10, wherein the predetermined period of time for heating to about 1,000 0 C. by using an electromagnetic induction heater [[(20)]] is 15 minutes. Currently amended
The system for producing graphene according to claim 10, wherein the glass cylindrical
Layer stacks claimed or described, ordered top of device to substrate.
AP-CVD graphene growth system
Materials described outside the worked examples.
copper sheets
Cu
ceramic material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 2 describes a copper sheet arrangement for the graphene synthesis of the present invention, with the 532-nm Raman spectra being obtained directly on the inner and outer surfaces of the copper sheets from the synthesis of the present invention.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.00001 Pa | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,624,114Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 describes a scheme of the system of the present invention.
Figure 2 describes a copper sheet arrangement for the graphene synthesis of the present invention, with the 532-nm Raman spectra being obtained directly on the inner and outer surfaces of the copper sheets from the synthesis of the present invention.
Figure 3 describes the 514-nm Raman spectrum of graphene grown on one of the copper sheet inner surface.
Figure 4 describes micrographs of graphene as transferred into silicon oxide, wherein graphene mono and bilayer regions based on 532-nm Raman spectra are observed.
Figure 5 describes Raman spectra with a 647-nm wavelength of graphene as grown on one of the copper sheet inner surface, and transferred over a Si O 2/Si substrate.
Figure 6 describes the 488-nm Raman spectrum of graphene on one of the copper sheet inner surface.
Figure 7 describes the 514-nm Raman spectrum of graphene as grown on one of the copper sheet inner surface, and transferred over Si O 2/Si in ten different points of the substrate radially.
Figure 8 shows the time-of-exposure variation of the sheets as a function of 2D/G and Full Width at Half Maximum (FWHM).
Figure 9 shows the temperature variation as a function of FWHM 2D/G.
Figure 10 shows the distance variation in the sheet gap during the synthesis as a function of 2D/G, D/G, and a curve "b" is inserted therein as a function of FWHM.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing graphene on a copper substrate by modified chemical vapor deposition (AP-CVD), comprising: providing two copper sheets [[(40)]] arranged in a parallel manner and separated by a ceramic material [[(30)]]; incorporating said two copper sheets [[(40)]] into an open chamber that is constituted by a glass cylindrical chamber [[(10)]], wherein its axial axis is directed vertically, wherein the glass cylindrical chamber [[(10)]] is totally open in its lower surface [[(15)]]; heating the two copper sheets [[(40)]] by using an electromagnetic induction heater [[(20)]] at a predetermined temperature; providing a mixture of Methane and Argon streams in the upper surface [[(18)]] of said glass cylindrical chamber [[(10)]]; continually monitoring the temperature of the two copper sheets [[(40)]] by using a radiation pyrometer [[(50)]] through a quartz window [[(60)]] arranged in the upper surface [[(18)]] of the glass cylindrical chamber [[(10)]]; heating to about 1,000 0 C. by using an electromagnetic induction heater [[(20)]] for a predetermined period of time; and cooling down to room temperature with the same Methane and Argon streams. Currently amended
The method for producing graphene according to claim 1, wherein the predetermined temperature to heat the two copper sheets [[(40)]] arranged in a parallel manner and separated by a ceramic material [[(30)]] by using the electromagnetic induction heater [[(20)]] is 1,000 0 C. Currently amended
The method for producing graphene according to claim 1, wherein the two circular copper sheets [[(40)]], arranged inside the glass cylindrical chamber [[(10)]], are 30 mm diameter and 0.1 mm thickness with 99. 8 % purity, are also arranged in a parallel, separated manner, and supported by three ceramic pillars [[(30)]], of 3.5 mm diameter and 30 mm long, that are fixed to a base [[(35)]] also made of the same material. Currently amended
The method for producing graphene according to claim 1, wherein the electromagnetic induction heater [[(20)]] consists of a coil,., that externally rolls up at the glass cylindrical chamber [[(10)]], wherein alternate current as generated by a frequency oscillator,, is fed to the coil. Currently amended
The method for producing graphene according to claim 1, wherein prior to their introduction into the glass cylindrical chamber [[(10)]], the two copper sheets [[(40)]] are treated with acetic acid for 2 minutes and rinsed with ethanol. Currently amended
The method for producing graphene according to claim 1, wherein the copper sheets [[(40)]] are kept under Methane and Argon streams of 1.0 L/min and 0.1 L/min, respectively, for 2 minutes. Currently amended
The method for producing graphene according to claim 1, wherein by cooling down with the same Methane and Argon streams, the cooldown reduction is 1,000 0 C. to 600 0 C. in about 5 seconds. Currently amended
The method for producing graphene according to claim 1, wherein the predetermined period of time for heating to about 1000 0 C. by using an electromagnetic induction heater [[(20)]] is 15 minutes. Currently amended
The method for producing graphene according to claim 1, wherein the glass cylindrical chamber [[(10)]] material is Pyrex with a 40 mm diameter and i s 110 mm long. Currently amended
A system for producing graphene on a copper substrate by modified chemical vapor deposition (AP-CVD), comprising two copper sheets [[(40)]] arranged in a parallel manner and separated by a ceramic material [[(40)]]; said two copper sheets [[(40)]] incorporated into an open chamber that is constituted by a glass cylindrical chamber [[(10)]], wherein its axial axis is directed vertically, wherein the glass cylindrical chamber [[(10)]] is totally open in its lower surface [[(15)]]; an electromagnetic induction heater [[(20)]] at a predetermined temperature to heat the two copper sheets [[(40)]] and for a predetermined period of time; a provision of a mixture of Methane and Argon streams in the upper surface [[(18)]] of said glass cylindrical chamber [[(10)]]; and a radiation pyrometer [[(50)]] to continually monitor the temperature of the two copper sheets [[(40)]] through a quartz window [[(60)]] arranged in the upper surface [[(18)]] of the glass cylindrical chamber [[(10)]]. Currently amended
The system for producing graphene according to claim 10, wherein the predetermined temperature to heat the two copper sheets [[(40)]] arranged in a parallel manner and separated by a ceramic material [[(30)]] by using the electromagnetic induction heater [[(20)]] is 1,000 0 C. Currently amended
The system for producing graphene according to claim 10, wherein the two circular copper sheets [[(40)]], arranged inside the glass cylindrical chamber [[(10)]], are 30 mm diameter and 0.1 mm thickness with 99. 8 % purity, are also arranged in a parallel, separated manner, and supported by three ceramic pillars [[(30)]], of 3.5 mm diameter and 30 mm long, that are fixed to a base [[(35)]] also made of the same material. Currently amended
The system for producing graphene according to claim 10, wherein the electromagnetic induction heater [[(20)]] consists of a coil,., that externally rolls up at the glass cylindrical chamber [[(10)]], wherein alternate current as generated by a frequency oscillator,, is fed to the coil. Currently amended
The system for producing graphene according to claim 10, wherein prior to their introduction into the glass cylindrical chamber [[(10)]], the two copper sheets [[(40)]] are treated with acetic acid for 2 minutes and rinsed with ethanol. Currently amended
The system for producing graphene according to claim 10, wherein the provision of the Methane and Argon streams is 1.0 L/min and 0.1 L/min, respectively, for 2 minutes. Currently amended
The system for producing graphene according to claim 10, wherein the predetermined period of time for heating to about 1,000 0 C. by using an electromagnetic induction heater [[(20)]] is 15 minutes. Currently amended
The system for producing graphene according to claim 10, wherein the glass cylindrical
Layer stacks claimed or described, ordered top of device to substrate.
AP-CVD graphene growth system
Materials described outside the worked examples.
copper sheets
Cu
ceramic material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 2 describes a copper sheet arrangement for the graphene synthesis of the present invention, with the 532-nm Raman spectra being obtained directly on the inner and outer surfaces of the copper sheets from the synthesis of the present invention.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.00001 Pa | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,624,114Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 describes a scheme of the system of the present invention.
Figure 2 describes a copper sheet arrangement for the graphene synthesis of the present invention, with the 532-nm Raman spectra being obtained directly on the inner and outer surfaces of the copper sheets from the synthesis of the present invention.
Figure 3 describes the 514-nm Raman spectrum of graphene grown on one of the copper sheet inner surface.
Figure 4 describes micrographs of graphene as transferred into silicon oxide, wherein graphene mono and bilayer regions based on 532-nm Raman spectra are observed.
Figure 5 describes Raman spectra with a 647-nm wavelength of graphene as grown on one of the copper sheet inner surface, and transferred over a Si O 2/Si substrate.
Figure 6 describes the 488-nm Raman spectrum of graphene on one of the copper sheet inner surface.
Figure 7 describes the 514-nm Raman spectrum of graphene as grown on one of the copper sheet inner surface, and transferred over Si O 2/Si in ten different points of the substrate radially.
Figure 8 shows the time-of-exposure variation of the sheets as a function of 2D/G and Full Width at Half Maximum (FWHM).
Figure 9 shows the temperature variation as a function of FWHM 2D/G.
Figure 10 shows the distance variation in the sheet gap during the synthesis as a function of 2D/G, D/G, and a curve "b" is inserted therein as a function of FWHM.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing graphene on a copper substrate by modified chemical vapor deposition (AP-CVD), comprising: providing two copper sheets [[(40)]] arranged in a parallel manner and separated by a ceramic material [[(30)]]; incorporating said two copper sheets [[(40)]] into an open chamber that is constituted by a glass cylindrical chamber [[(10)]], wherein its axial axis is directed vertically, wherein the glass cylindrical chamber [[(10)]] is totally open in its lower surface [[(15)]]; heating the two copper sheets [[(40)]] by using an electromagnetic induction heater [[(20)]] at a predetermined temperature; providing a mixture of Methane and Argon streams in the upper surface [[(18)]] of said glass cylindrical chamber [[(10)]]; continually monitoring the temperature of the two copper sheets [[(40)]] by using a radiation pyrometer [[(50)]] through a quartz window [[(60)]] arranged in the upper surface [[(18)]] of the glass cylindrical chamber [[(10)]]; heating to about 1,000 0 C. by using an electromagnetic induction heater [[(20)]] for a predetermined period of time; and cooling down to room temperature with the same Methane and Argon streams. Currently amended
The method for producing graphene according to claim 1, wherein the predetermined temperature to heat the two copper sheets [[(40)]] arranged in a parallel manner and separated by a ceramic material [[(30)]] by using the electromagnetic induction heater [[(20)]] is 1,000 0 C. Currently amended
The method for producing graphene according to claim 1, wherein the two circular copper sheets [[(40)]], arranged inside the glass cylindrical chamber [[(10)]], are 30 mm diameter and 0.1 mm thickness with 99. 8 % purity, are also arranged in a parallel, separated manner, and supported by three ceramic pillars [[(30)]], of 3.5 mm diameter and 30 mm long, that are fixed to a base [[(35)]] also made of the same material. Currently amended
The method for producing graphene according to claim 1, wherein the electromagnetic induction heater [[(20)]] consists of a coil,., that externally rolls up at the glass cylindrical chamber [[(10)]], wherein alternate current as generated by a frequency oscillator,, is fed to the coil. Currently amended
The method for producing graphene according to claim 1, wherein prior to their introduction into the glass cylindrical chamber [[(10)]], the two copper sheets [[(40)]] are treated with acetic acid for 2 minutes and rinsed with ethanol. Currently amended
The method for producing graphene according to claim 1, wherein the copper sheets [[(40)]] are kept under Methane and Argon streams of 1.0 L/min and 0.1 L/min, respectively, for 2 minutes. Currently amended
The method for producing graphene according to claim 1, wherein by cooling down with the same Methane and Argon streams, the cooldown reduction is 1,000 0 C. to 600 0 C. in about 5 seconds. Currently amended
The method for producing graphene according to claim 1, wherein the predetermined period of time for heating to about 1000 0 C. by using an electromagnetic induction heater [[(20)]] is 15 minutes. Currently amended
The method for producing graphene according to claim 1, wherein the glass cylindrical chamber [[(10)]] material is Pyrex with a 40 mm diameter and i s 110 mm long. Currently amended
A system for producing graphene on a copper substrate by modified chemical vapor deposition (AP-CVD), comprising two copper sheets [[(40)]] arranged in a parallel manner and separated by a ceramic material [[(40)]]; said two copper sheets [[(40)]] incorporated into an open chamber that is constituted by a glass cylindrical chamber [[(10)]], wherein its axial axis is directed vertically, wherein the glass cylindrical chamber [[(10)]] is totally open in its lower surface [[(15)]]; an electromagnetic induction heater [[(20)]] at a predetermined temperature to heat the two copper sheets [[(40)]] and for a predetermined period of time; a provision of a mixture of Methane and Argon streams in the upper surface [[(18)]] of said glass cylindrical chamber [[(10)]]; and a radiation pyrometer [[(50)]] to continually monitor the temperature of the two copper sheets [[(40)]] through a quartz window [[(60)]] arranged in the upper surface [[(18)]] of the glass cylindrical chamber [[(10)]]. Currently amended
The system for producing graphene according to claim 10, wherein the predetermined temperature to heat the two copper sheets [[(40)]] arranged in a parallel manner and separated by a ceramic material [[(30)]] by using the electromagnetic induction heater [[(20)]] is 1,000 0 C. Currently amended
The system for producing graphene according to claim 10, wherein the two circular copper sheets [[(40)]], arranged inside the glass cylindrical chamber [[(10)]], are 30 mm diameter and 0.1 mm thickness with 99. 8 % purity, are also arranged in a parallel, separated manner, and supported by three ceramic pillars [[(30)]], of 3.5 mm diameter and 30 mm long, that are fixed to a base [[(35)]] also made of the same material. Currently amended
The system for producing graphene according to claim 10, wherein the electromagnetic induction heater [[(20)]] consists of a coil,., that externally rolls up at the glass cylindrical chamber [[(10)]], wherein alternate current as generated by a frequency oscillator,, is fed to the coil. Currently amended
The system for producing graphene according to claim 10, wherein prior to their introduction into the glass cylindrical chamber [[(10)]], the two copper sheets [[(40)]] are treated with acetic acid for 2 minutes and rinsed with ethanol. Currently amended
The system for producing graphene according to claim 10, wherein the provision of the Methane and Argon streams is 1.0 L/min and 0.1 L/min, respectively, for 2 minutes. Currently amended
The system for producing graphene according to claim 10, wherein the predetermined period of time for heating to about 1,000 0 C. by using an electromagnetic induction heater [[(20)]] is 15 minutes. Currently amended
The system for producing graphene according to claim 10, wherein the glass cylindrical
Layer stacks claimed or described, ordered top of device to substrate.
AP-CVD graphene growth system
Materials described outside the worked examples.
copper sheets
Cu
ceramic material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 2 describes a copper sheet arrangement for the graphene synthesis of the present invention, with the 532-nm Raman spectra being obtained directly on the inner and outer surfaces of the copper sheets from the synthesis of the present invention.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.00001 Pa | — |
Related documents with shared materials, methods, properties, or citations.
Methane
CH₄
Argon
Ar
acetic acid
CH₃COOH
ethanol
C₂H₅OH
graphene
Pyrex glass
Figure 3 describes the 514-nm Raman spectrum of graphene grown on one of the copper sheet inner surface.
Figure 4 describes micrographs of graphene as transferred into silicon oxide, wherein graphene mono and bilayer regions based on 532-nm Raman spectra are observed.
Figure 5 describes Raman spectra with a 647-nm wavelength of graphene as grown on one of the copper sheet inner surface, and transferred over a Si O 2/Si substrate.
Figure 6 describes the 488-nm Raman spectrum of graphene on one of the copper sheet inner surface.
Figure 7 describes the 514-nm Raman spectrum of graphene as grown on one of the copper sheet inner surface, and transferred over Si O 2/Si in ten different points of the substrate radially.
Blood Works for Graphene Production
Methane
CH₄
Argon
Ar
acetic acid
CH₃COOH
ethanol
C₂H₅OH
graphene
Pyrex glass
Figure 3 describes the 514-nm Raman spectrum of graphene grown on one of the copper sheet inner surface.
Figure 4 describes micrographs of graphene as transferred into silicon oxide, wherein graphene mono and bilayer regions based on 532-nm Raman spectra are observed.
Figure 5 describes Raman spectra with a 647-nm wavelength of graphene as grown on one of the copper sheet inner surface, and transferred over a Si O 2/Si substrate.
Figure 6 describes the 488-nm Raman spectrum of graphene on one of the copper sheet inner surface.
Figure 7 describes the 514-nm Raman spectrum of graphene as grown on one of the copper sheet inner surface, and transferred over Si O 2/Si in ten different points of the substrate radially.
Blood Works for Graphene Production
Methane
CH₄
Argon
Ar
acetic acid
CH₃COOH
ethanol
C₂H₅OH
graphene
Pyrex glass
Figure 3 describes the 514-nm Raman spectrum of graphene grown on one of the copper sheet inner surface.
Figure 4 describes micrographs of graphene as transferred into silicon oxide, wherein graphene mono and bilayer regions based on 532-nm Raman spectra are observed.
Figure 5 describes Raman spectra with a 647-nm wavelength of graphene as grown on one of the copper sheet inner surface, and transferred over a Si O 2/Si substrate.
Figure 6 describes the 488-nm Raman spectrum of graphene on one of the copper sheet inner surface.
Figure 7 describes the 514-nm Raman spectrum of graphene as grown on one of the copper sheet inner surface, and transferred over Si O 2/Si in ten different points of the substrate radially.
Blood Works for Graphene Production
Methane
CH₄
Argon
Ar
acetic acid
CH₃COOH
ethanol
C₂H₅OH
graphene
Pyrex glass
Figure 3 describes the 514-nm Raman spectrum of graphene grown on one of the copper sheet inner surface.
Figure 4 describes micrographs of graphene as transferred into silicon oxide, wherein graphene mono and bilayer regions based on 532-nm Raman spectra are observed.
Figure 5 describes Raman spectra with a 647-nm wavelength of graphene as grown on one of the copper sheet inner surface, and transferred over a Si O 2/Si substrate.
Figure 6 describes the 488-nm Raman spectrum of graphene on one of the copper sheet inner surface.
Figure 7 describes the 514-nm Raman spectrum of graphene as grown on one of the copper sheet inner surface, and transferred over Si O 2/Si in ten different points of the substrate radially.