Patent
Atlas literature
Patent
US 10,351,431Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B are optical images of an un-treated Cu foil under low and high magnification, respectively. The Cu surface shows a directional texture consisting of …
FIG. 2D [[d]]) illustrates a schematic diagram of the electropolishing setup; [0o 1 o] -{490&]-
FIG. 3 illustrates Raman spectra of graphene grown on Cu foil by chemical vapor deposition and then transferred to a 300 nm oxide silicon substrate using PMMA …
FIG. 4C [[c]]) optical micrograph of graphene grown on electropolished Cu with a methane feedstock concentration of 41 ppm and then transferred to an oxidized …
FIG. 5 FIGs. 5A-5 B illustrate illustrates resistance as function of gate voltage for typical graphene FET devices fabricated on single layer graphene that …
FIG. 6 FIGs. 6A-6D illustrate illustrates several proposed, non-limiting reaction pathways, analogous to free radical polymerization, to explain graphene …
FIG. 7 illustrates (via photograph) a graphene sample that has been transferred onto a PDMS stamp; (0 01 5] -
FIG. 8C [[c]]) Raman spectra of single-layer graphene from s SVG 13814888.06-21-2019.JX₆PJQFRRXEAPX4.SPEC.1.27.430.2155.608.2284.svg 0.43 0.593 Chemistry Black …
FIG. 9A. After "DETAILED DESCR I PTION", please amend these paragraphs as follows: [0033] Figures la-b
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating graphenic material, comprising: growing a sheet of graphene atop an electropolished metallic substrate by contacting the substrate with a hydrocarbon gas at a concentration of less than about 2000 ppm, the contacting being performed such that the resulting graphenic material comprises greater than 95% single layer graphene. Currently amended
The method of claim 1, wherein the metallic substrate is substantially nonreactive to carbon. Original
The method of claim 1, wherein the metallic substrate comprises copper, rhodium, ruthenium, iridium, platinum, cobalt, nickel, or any combination thereof. Original
The method of claim 1, wherein the graphene sheet has a cross-sectional dimension of at least about 25 cm. Previously presented
The method of claim 1, wherein the contacting occurs at from about 50 0 C to about 2000 ° C, about 100 ° C to about 1500 ° C, or about 500 ° C to about 1 100 °C. Previously presented
The method of claim 1, wherein the hydrocarbon gas is present at less than about 50 ppm. Previously presented
The method of claim 1, wherein the contacting occurs at atmospheric pressure. Currently amended
The method of claim 1, further comprising isolating the graphene sheet. Previously presented
The method of claim 1, wherein the metallic substrate is disposed atop an insulator or a semiconductor. Currently amended
The method of claim 1, wherein the roughness of the planarized metallic substrate is reduced by at least a factor of at least 2, or at least 5, relative to a non-planarized metal li c substrate. Previously presented
A graphene sheet or layer made according to claim 1. Previously presented
Canceled
The method of claim -2 6, wherein the metallic substrate comprises copper. Currently amended
Canceled
Canceled
11-12 Canceled
Canceled
14-17 Canceled
Canceled
19-20 Canceled
Canceled
Canceled
A composition, comprising: a graphene sheet or layer comprising at least about 80 % single-layer graphene. Withdrawn
The composition of claim 28, wherein the ratio of the composition 's Raman 2D band to the composition ' s Raman G band is at least about 2, and wherein the composition is characterized as having a room temperature hole mobility of at least about 400 cm 2/V-s, at least about 500 cm 2/V-s, or at least about 600 cm 2/V-s. Withdrawn
The composition of claim 28, wherein the composition exhibits a symmetric Raman 2D band, and wherein the composition is characterized as having a Raman Stokes G peak at 1583 cm⁻¹ and a symmetric Raman 2D band around 2700 cm- 1. Withdrawn
29-33 Canceled
Canceled
3 5-37. Canceled
Canceled
39-59 Canceled
Canceled
A device comprising the composition of claim input device, a transistor, a liquid crystal display, diode, a photovoltaic cell, or any combination 28, wherein the device comprises a display, an a photovoltaic cell, an organic light- emitting thereof. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor/graphene device
Materials described outside the worked examples.
graphene
electropolished metallic substrate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 B are optical images of an un-treated Cu foil under low and high magnification, respectively. The Cu surface shows a directional texture consisting of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
room temperature hole mobility (claimed range, claim 7) | 400–600 | graphene |
room temperature hole mobility (claimed lower bounds, claim 34) | ≥ 400 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,351,431Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B are optical images of an un-treated Cu foil under low and high magnification, respectively. The Cu surface shows a directional texture consisting of …
FIG. 2D [[d]]) illustrates a schematic diagram of the electropolishing setup; [0o 1 o] -{490&]-
FIG. 3 illustrates Raman spectra of graphene grown on Cu foil by chemical vapor deposition and then transferred to a 300 nm oxide silicon substrate using PMMA …
FIG. 4C [[c]]) optical micrograph of graphene grown on electropolished Cu with a methane feedstock concentration of 41 ppm and then transferred to an oxidized …
FIG. 5 FIGs. 5A-5 B illustrate illustrates resistance as function of gate voltage for typical graphene FET devices fabricated on single layer graphene that …
FIG. 6 FIGs. 6A-6D illustrate illustrates several proposed, non-limiting reaction pathways, analogous to free radical polymerization, to explain graphene …
FIG. 7 illustrates (via photograph) a graphene sample that has been transferred onto a PDMS stamp; (0 01 5] -
FIG. 8C [[c]]) Raman spectra of single-layer graphene from s SVG 13814888.06-21-2019.JX₆PJQFRRXEAPX4.SPEC.1.27.430.2155.608.2284.svg 0.43 0.593 Chemistry Black …
FIG. 9A. After "DETAILED DESCR I PTION", please amend these paragraphs as follows: [0033] Figures la-b
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating graphenic material, comprising: growing a sheet of graphene atop an electropolished metallic substrate by contacting the substrate with a hydrocarbon gas at a concentration of less than about 2000 ppm, the contacting being performed such that the resulting graphenic material comprises greater than 95% single layer graphene. Currently amended
The method of claim 1, wherein the metallic substrate is substantially nonreactive to carbon. Original
The method of claim 1, wherein the metallic substrate comprises copper, rhodium, ruthenium, iridium, platinum, cobalt, nickel, or any combination thereof. Original
The method of claim 1, wherein the graphene sheet has a cross-sectional dimension of at least about 25 cm. Previously presented
The method of claim 1, wherein the contacting occurs at from about 50 0 C to about 2000 ° C, about 100 ° C to about 1500 ° C, or about 500 ° C to about 1 100 °C. Previously presented
The method of claim 1, wherein the hydrocarbon gas is present at less than about 50 ppm. Previously presented
The method of claim 1, wherein the contacting occurs at atmospheric pressure. Currently amended
The method of claim 1, further comprising isolating the graphene sheet. Previously presented
The method of claim 1, wherein the metallic substrate is disposed atop an insulator or a semiconductor. Currently amended
The method of claim 1, wherein the roughness of the planarized metallic substrate is reduced by at least a factor of at least 2, or at least 5, relative to a non-planarized metal li c substrate. Previously presented
A graphene sheet or layer made according to claim 1. Previously presented
Canceled
The method of claim -2 6, wherein the metallic substrate comprises copper. Currently amended
Canceled
Canceled
11-12 Canceled
Canceled
14-17 Canceled
Canceled
19-20 Canceled
Canceled
Canceled
A composition, comprising: a graphene sheet or layer comprising at least about 80 % single-layer graphene. Withdrawn
The composition of claim 28, wherein the ratio of the composition 's Raman 2D band to the composition ' s Raman G band is at least about 2, and wherein the composition is characterized as having a room temperature hole mobility of at least about 400 cm 2/V-s, at least about 500 cm 2/V-s, or at least about 600 cm 2/V-s. Withdrawn
The composition of claim 28, wherein the composition exhibits a symmetric Raman 2D band, and wherein the composition is characterized as having a Raman Stokes G peak at 1583 cm⁻¹ and a symmetric Raman 2D band around 2700 cm- 1. Withdrawn
29-33 Canceled
Canceled
3 5-37. Canceled
Canceled
39-59 Canceled
Canceled
A device comprising the composition of claim input device, a transistor, a liquid crystal display, diode, a photovoltaic cell, or any combination 28, wherein the device comprises a display, an a photovoltaic cell, an organic light- emitting thereof. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor/graphene device
Materials described outside the worked examples.
graphene
electropolished metallic substrate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 B are optical images of an un-treated Cu foil under low and high magnification, respectively. The Cu surface shows a directional texture consisting of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
room temperature hole mobility (claimed range, claim 7) | 400–600 | graphene |
room temperature hole mobility (claimed lower bounds, claim 34) | ≥ 400 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,351,431Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B are optical images of an un-treated Cu foil under low and high magnification, respectively. The Cu surface shows a directional texture consisting of …
FIG. 2D [[d]]) illustrates a schematic diagram of the electropolishing setup; [0o 1 o] -{490&]-
FIG. 3 illustrates Raman spectra of graphene grown on Cu foil by chemical vapor deposition and then transferred to a 300 nm oxide silicon substrate using PMMA …
FIG. 4C [[c]]) optical micrograph of graphene grown on electropolished Cu with a methane feedstock concentration of 41 ppm and then transferred to an oxidized …
FIG. 5 FIGs. 5A-5 B illustrate illustrates resistance as function of gate voltage for typical graphene FET devices fabricated on single layer graphene that …
FIG. 6 FIGs. 6A-6D illustrate illustrates several proposed, non-limiting reaction pathways, analogous to free radical polymerization, to explain graphene …
FIG. 7 illustrates (via photograph) a graphene sample that has been transferred onto a PDMS stamp; (0 01 5] -
FIG. 8C [[c]]) Raman spectra of single-layer graphene from s SVG 13814888.06-21-2019.JX₆PJQFRRXEAPX4.SPEC.1.27.430.2155.608.2284.svg 0.43 0.593 Chemistry Black …
FIG. 9A. After "DETAILED DESCR I PTION", please amend these paragraphs as follows: [0033] Figures la-b
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating graphenic material, comprising: growing a sheet of graphene atop an electropolished metallic substrate by contacting the substrate with a hydrocarbon gas at a concentration of less than about 2000 ppm, the contacting being performed such that the resulting graphenic material comprises greater than 95% single layer graphene. Currently amended
The method of claim 1, wherein the metallic substrate is substantially nonreactive to carbon. Original
The method of claim 1, wherein the metallic substrate comprises copper, rhodium, ruthenium, iridium, platinum, cobalt, nickel, or any combination thereof. Original
The method of claim 1, wherein the graphene sheet has a cross-sectional dimension of at least about 25 cm. Previously presented
The method of claim 1, wherein the contacting occurs at from about 50 0 C to about 2000 ° C, about 100 ° C to about 1500 ° C, or about 500 ° C to about 1 100 °C. Previously presented
The method of claim 1, wherein the hydrocarbon gas is present at less than about 50 ppm. Previously presented
The method of claim 1, wherein the contacting occurs at atmospheric pressure. Currently amended
The method of claim 1, further comprising isolating the graphene sheet. Previously presented
The method of claim 1, wherein the metallic substrate is disposed atop an insulator or a semiconductor. Currently amended
The method of claim 1, wherein the roughness of the planarized metallic substrate is reduced by at least a factor of at least 2, or at least 5, relative to a non-planarized metal li c substrate. Previously presented
A graphene sheet or layer made according to claim 1. Previously presented
Canceled
The method of claim -2 6, wherein the metallic substrate comprises copper. Currently amended
Canceled
Canceled
11-12 Canceled
Canceled
14-17 Canceled
Canceled
19-20 Canceled
Canceled
Canceled
A composition, comprising: a graphene sheet or layer comprising at least about 80 % single-layer graphene. Withdrawn
The composition of claim 28, wherein the ratio of the composition 's Raman 2D band to the composition ' s Raman G band is at least about 2, and wherein the composition is characterized as having a room temperature hole mobility of at least about 400 cm 2/V-s, at least about 500 cm 2/V-s, or at least about 600 cm 2/V-s. Withdrawn
The composition of claim 28, wherein the composition exhibits a symmetric Raman 2D band, and wherein the composition is characterized as having a Raman Stokes G peak at 1583 cm⁻¹ and a symmetric Raman 2D band around 2700 cm- 1. Withdrawn
29-33 Canceled
Canceled
3 5-37. Canceled
Canceled
39-59 Canceled
Canceled
A device comprising the composition of claim input device, a transistor, a liquid crystal display, diode, a photovoltaic cell, or any combination 28, wherein the device comprises a display, an a photovoltaic cell, an organic light- emitting thereof. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor/graphene device
Materials described outside the worked examples.
graphene
electropolished metallic substrate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 B are optical images of an un-treated Cu foil under low and high magnification, respectively. The Cu surface shows a directional texture consisting of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
room temperature hole mobility (claimed range, claim 7) | 400–600 | graphene |
room temperature hole mobility (claimed lower bounds, claim 34) | ≥ 400 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,351,431Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B are optical images of an un-treated Cu foil under low and high magnification, respectively. The Cu surface shows a directional texture consisting of …
FIG. 2D [[d]]) illustrates a schematic diagram of the electropolishing setup; [0o 1 o] -{490&]-
FIG. 3 illustrates Raman spectra of graphene grown on Cu foil by chemical vapor deposition and then transferred to a 300 nm oxide silicon substrate using PMMA …
FIG. 4C [[c]]) optical micrograph of graphene grown on electropolished Cu with a methane feedstock concentration of 41 ppm and then transferred to an oxidized …
FIG. 5 FIGs. 5A-5 B illustrate illustrates resistance as function of gate voltage for typical graphene FET devices fabricated on single layer graphene that …
FIG. 6 FIGs. 6A-6D illustrate illustrates several proposed, non-limiting reaction pathways, analogous to free radical polymerization, to explain graphene …
FIG. 7 illustrates (via photograph) a graphene sample that has been transferred onto a PDMS stamp; (0 01 5] -
FIG. 8C [[c]]) Raman spectra of single-layer graphene from s SVG 13814888.06-21-2019.JX₆PJQFRRXEAPX4.SPEC.1.27.430.2155.608.2284.svg 0.43 0.593 Chemistry Black …
FIG. 9A. After "DETAILED DESCR I PTION", please amend these paragraphs as follows: [0033] Figures la-b
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating graphenic material, comprising: growing a sheet of graphene atop an electropolished metallic substrate by contacting the substrate with a hydrocarbon gas at a concentration of less than about 2000 ppm, the contacting being performed such that the resulting graphenic material comprises greater than 95% single layer graphene. Currently amended
The method of claim 1, wherein the metallic substrate is substantially nonreactive to carbon. Original
The method of claim 1, wherein the metallic substrate comprises copper, rhodium, ruthenium, iridium, platinum, cobalt, nickel, or any combination thereof. Original
The method of claim 1, wherein the graphene sheet has a cross-sectional dimension of at least about 25 cm. Previously presented
The method of claim 1, wherein the contacting occurs at from about 50 0 C to about 2000 ° C, about 100 ° C to about 1500 ° C, or about 500 ° C to about 1 100 °C. Previously presented
The method of claim 1, wherein the hydrocarbon gas is present at less than about 50 ppm. Previously presented
The method of claim 1, wherein the contacting occurs at atmospheric pressure. Currently amended
The method of claim 1, further comprising isolating the graphene sheet. Previously presented
The method of claim 1, wherein the metallic substrate is disposed atop an insulator or a semiconductor. Currently amended
The method of claim 1, wherein the roughness of the planarized metallic substrate is reduced by at least a factor of at least 2, or at least 5, relative to a non-planarized metal li c substrate. Previously presented
A graphene sheet or layer made according to claim 1. Previously presented
Canceled
The method of claim -2 6, wherein the metallic substrate comprises copper. Currently amended
Canceled
Canceled
11-12 Canceled
Canceled
14-17 Canceled
Canceled
19-20 Canceled
Canceled
Canceled
A composition, comprising: a graphene sheet or layer comprising at least about 80 % single-layer graphene. Withdrawn
The composition of claim 28, wherein the ratio of the composition 's Raman 2D band to the composition ' s Raman G band is at least about 2, and wherein the composition is characterized as having a room temperature hole mobility of at least about 400 cm 2/V-s, at least about 500 cm 2/V-s, or at least about 600 cm 2/V-s. Withdrawn
The composition of claim 28, wherein the composition exhibits a symmetric Raman 2D band, and wherein the composition is characterized as having a Raman Stokes G peak at 1583 cm⁻¹ and a symmetric Raman 2D band around 2700 cm- 1. Withdrawn
29-33 Canceled
Canceled
3 5-37. Canceled
Canceled
39-59 Canceled
Canceled
A device comprising the composition of claim input device, a transistor, a liquid crystal display, diode, a photovoltaic cell, or any combination 28, wherein the device comprises a display, an a photovoltaic cell, an organic light- emitting thereof. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor/graphene device
Materials described outside the worked examples.
graphene
electropolished metallic substrate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 B are optical images of an un-treated Cu foil under low and high magnification, respectively. The Cu surface shows a directional texture consisting of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
room temperature hole mobility (claimed range, claim 7) | 400–600 | graphene |
room temperature hole mobility (claimed lower bounds, claim 34) | ≥ 400 |
Related documents with shared materials, methods, properties, or citations.
copper
Cu
metallic substrate (rhodium, ruthenium, iridium, platinum, cobalt, nickel)
hydrocarbon gas
silicon
Si
FIG. 2D [[d]]) illustrates a schematic diagram of the electropolishing setup; [0o 1 o] -{490&]-
FIG. 3 illustrates Raman spectra of graphene grown on Cu foil by chemical vapor deposition and then transferred to a 300 nm oxide silicon substrate using PMMA …
FIG. 4C [[c]]) optical micrograph of graphene grown on electropolished Cu with a methane feedstock concentration of 41 ppm and then transferred to an oxidized …
FIG. 5 FIGs. 5A-5 B illustrate illustrates resistance as function of gate voltage for typical graphene FET devices fabricated on single layer graphene that …
FIG. 8C [[c]]) Raman spectra of single-layer graphene from s SVG 13814888.06-21-2019.JX₆PJQFRRXEAPX4.SPEC.1.27.430.2155.608.2284.svg 0.43 0.593 Chemistry Black …
FIG. 9A. After "DETAILED DESCR I PTION", please amend these paragraphs as follows: [0033] Figures la-b
Raman Stokes G peak position (claim 38) | — | graphene |
Raman 2D band position (claim 38) | — | graphene |
Temperature | 100–1500 °C | — |
Thickness | 400–600 cm | — |
Thickness | ≥ 25 cm | — |
Thickness | ≥ 400 cm | — |
Thickness | ≥ 500 cm | — |
Thickness | ≥ 600 cm | — |
copper
Cu
metallic substrate (rhodium, ruthenium, iridium, platinum, cobalt, nickel)
hydrocarbon gas
silicon
Si
FIG. 2D [[d]]) illustrates a schematic diagram of the electropolishing setup; [0o 1 o] -{490&]-
FIG. 3 illustrates Raman spectra of graphene grown on Cu foil by chemical vapor deposition and then transferred to a 300 nm oxide silicon substrate using PMMA …
FIG. 4C [[c]]) optical micrograph of graphene grown on electropolished Cu with a methane feedstock concentration of 41 ppm and then transferred to an oxidized …
FIG. 5 FIGs. 5A-5 B illustrate illustrates resistance as function of gate voltage for typical graphene FET devices fabricated on single layer graphene that …
FIG. 8C [[c]]) Raman spectra of single-layer graphene from s SVG 13814888.06-21-2019.JX₆PJQFRRXEAPX4.SPEC.1.27.430.2155.608.2284.svg 0.43 0.593 Chemistry Black …
FIG. 9A. After "DETAILED DESCR I PTION", please amend these paragraphs as follows: [0033] Figures la-b
Raman Stokes G peak position (claim 38) | — | graphene |
Raman 2D band position (claim 38) | — | graphene |
Temperature | 100–1500 °C | — |
Thickness | 400–600 cm | — |
Thickness | ≥ 25 cm | — |
Thickness | ≥ 400 cm | — |
Thickness | ≥ 500 cm | — |
Thickness | ≥ 600 cm | — |
copper
Cu
metallic substrate (rhodium, ruthenium, iridium, platinum, cobalt, nickel)
hydrocarbon gas
silicon
Si
FIG. 2D [[d]]) illustrates a schematic diagram of the electropolishing setup; [0o 1 o] -{490&]-
FIG. 3 illustrates Raman spectra of graphene grown on Cu foil by chemical vapor deposition and then transferred to a 300 nm oxide silicon substrate using PMMA …
FIG. 4C [[c]]) optical micrograph of graphene grown on electropolished Cu with a methane feedstock concentration of 41 ppm and then transferred to an oxidized …
FIG. 5 FIGs. 5A-5 B illustrate illustrates resistance as function of gate voltage for typical graphene FET devices fabricated on single layer graphene that …
FIG. 8C [[c]]) Raman spectra of single-layer graphene from s SVG 13814888.06-21-2019.JX₆PJQFRRXEAPX4.SPEC.1.27.430.2155.608.2284.svg 0.43 0.593 Chemistry Black …
FIG. 9A. After "DETAILED DESCR I PTION", please amend these paragraphs as follows: [0033] Figures la-b
Raman Stokes G peak position (claim 38) | — | graphene |
Raman 2D band position (claim 38) | — | graphene |
Temperature | 100–1500 °C | — |
Thickness | 400–600 cm | — |
Thickness | ≥ 25 cm | — |
Thickness | ≥ 400 cm | — |
Thickness | ≥ 500 cm | — |
Thickness | ≥ 600 cm | — |
copper
Cu
metallic substrate (rhodium, ruthenium, iridium, platinum, cobalt, nickel)
hydrocarbon gas
silicon
Si
FIG. 2D [[d]]) illustrates a schematic diagram of the electropolishing setup; [0o 1 o] -{490&]-
FIG. 3 illustrates Raman spectra of graphene grown on Cu foil by chemical vapor deposition and then transferred to a 300 nm oxide silicon substrate using PMMA …
FIG. 4C [[c]]) optical micrograph of graphene grown on electropolished Cu with a methane feedstock concentration of 41 ppm and then transferred to an oxidized …
FIG. 5 FIGs. 5A-5 B illustrate illustrates resistance as function of gate voltage for typical graphene FET devices fabricated on single layer graphene that …
FIG. 8C [[c]]) Raman spectra of single-layer graphene from s SVG 13814888.06-21-2019.JX₆PJQFRRXEAPX4.SPEC.1.27.430.2155.608.2284.svg 0.43 0.593 Chemistry Black …
FIG. 9A. After "DETAILED DESCR I PTION", please amend these paragraphs as follows: [0033] Figures la-b
Raman Stokes G peak position (claim 38) | — | graphene |
Raman 2D band position (claim 38) | — | graphene |
Temperature | 100–1500 °C | — |
Thickness | 400–600 cm | — |
Thickness | ≥ 25 cm | — |
Thickness | ≥ 400 cm | — |
Thickness | ≥ 500 cm | — |
Thickness | ≥ 600 cm | — |
