Research paper
Experimental GrowthExperimental Characterization| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Intensity Ratio | I(2D)/I(G) | 2.56 | — | |||
| Raman Peak Fwhm | 2D | 35.16cm⁻¹ | — | |||
| Raman Peak | G | 1584.9cm⁻¹ | — | |||
| Raman Peak | 2D | 2667.1cm⁻¹ | — | |||
| Raman Peak | G blueshift after PC removal | 3.3cm⁻¹ | — | |||
| Raman Peak | 2D blueshift after PC removal | 15.1cm⁻¹ | — | |||
| Substrate Thickness | PC film thickness | 200nm | — | |||
| Fet Mobility | Young's modulus | 1.11TPa | — | |||
| Fet Mobility | Young's modulus | 1.01TPa | — | |||
| Fet Mobility | Young's modulus | 0.75TPa | — | |||
| Fet Threshold Voltage | tensile strength | 27.4GPa | — | |||
| Fet Threshold Voltage | tensile strength | 20.21GPa | — | |||
| Fet Threshold Voltage | tensile strength | 23.56GPa | — | |||
| Fet Carrier Concentration | failure strain | 6.01% | — | |||
| Fet Carrier Concentration | failure strain | 3.69% | — | |||
| Fet Carrier Concentration | failure strain | 4.53% | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Intensity Ratio | I(2D)/I(G) | 2.56 | — | |||
| Raman Peak Fwhm | 2D | 35.16cm⁻¹ | — | |||
| Raman Peak | G | 1584.9cm⁻¹ | — | |||
| Raman Peak | 2D | 2667.1cm⁻¹ | — | |||
| Raman Peak | G blueshift after PC removal | 3.3cm⁻¹ | — | |||
| Raman Peak | 2D blueshift after PC removal | 15.1cm⁻¹ | — | |||
| Substrate Thickness | PC film thickness | 200nm | — | |||
| Fet Mobility | Young's modulus | 1.11TPa | — | |||
| Fet Mobility | Young's modulus | 1.01TPa | — | |||
| Fet Mobility | Young's modulus | 0.75TPa | — | |||
| Fet Threshold Voltage | tensile strength | 27.4GPa | — | |||
| Fet Threshold Voltage | tensile strength | 20.21GPa | — | |||
| Fet Threshold Voltage | tensile strength | 23.56GPa | — | |||
| Fet Carrier Concentration | failure strain | 6.01% | — | |||
| Fet Carrier Concentration | failure strain | 3.69% | — | |||
| Fet Carrier Concentration | failure strain | 4.53% | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Intensity Ratio | I(2D)/I(G) | 2.56 | — | |||
| Raman Peak Fwhm | 2D | 35.16cm⁻¹ | — | |||
| Raman Peak | G | 1584.9cm⁻¹ | — | |||
| Raman Peak | 2D | 2667.1cm⁻¹ | — | |||
| Raman Peak | G blueshift after PC removal | 3.3cm⁻¹ | — | |||
| Raman Peak | 2D blueshift after PC removal | 15.1cm⁻¹ | — | |||
| Substrate Thickness | PC film thickness | 200nm | — | |||
| Fet Mobility | Young's modulus | 1.11TPa | — | |||
| Fet Mobility | Young's modulus | 1.01TPa | — | |||
| Fet Mobility | Young's modulus | 0.75TPa | — | |||
| Fet Threshold Voltage | tensile strength | 27.4GPa | — | |||
| Fet Threshold Voltage | tensile strength | 20.21GPa | — | |||
| Fet Threshold Voltage | tensile strength | 23.56GPa | — | |||
| Fet Carrier Concentration | failure strain | 6.01% | — | |||
| Fet Carrier Concentration | failure strain | 3.69% | — | |||
| Fet Carrier Concentration | failure strain | 4.53% | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Intensity Ratio | I(2D)/I(G) | 2.56 | — | |||
| Raman Peak Fwhm | 2D | 35.16cm⁻¹ | — | |||
| Raman Peak | G | 1584.9cm⁻¹ | — | |||
| Raman Peak | 2D | 2667.1cm⁻¹ | — | |||
| Raman Peak | G blueshift after PC removal | 3.3cm⁻¹ | — | |||
| Raman Peak | 2D blueshift after PC removal | 15.1cm⁻¹ | — | |||
| Substrate Thickness | PC film thickness | 200nm | — | |||
| Fet Mobility | Young's modulus | 1.11TPa | — | |||
| Fet Mobility | Young's modulus | 1.01TPa | — | |||
| Fet Mobility | Young's modulus | 0.75TPa | — | |||
| Fet Threshold Voltage | tensile strength | 27.4GPa | — | |||
| Fet Threshold Voltage | tensile strength | 20.21GPa | — | |||
| Fet Threshold Voltage | tensile strength | 23.56GPa | — | |||
| Fet Carrier Concentration | failure strain | 6.01% | — | |||
| Fet Carrier Concentration | failure strain | 3.69% | — | |||
| Fet Carrier Concentration | failure strain | 4.53% | — |
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