Research paper
Experimental CharacterizationValley-coherent quantum anomalous Hall state in AB-stacked MoTe₂/WSe₂ bilayers
Zui Tao, Bowen Shen, Shengwei Jiang, Tingxin Li et al.
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 characterizations3 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Threshold Voltage | critical electric field for QAH transition | 0.687V/nm | — | |||
| Fet Threshold Voltage | representative electric field in QAH state | 0.693V/nm | — | |||
| Fet On Off Ratio | QAH transport signature | quantized Hall resistance h/e^2 with negligible longitudinal resistance | — |
Related documents with shared materials, methods, properties, or citations.
Realization of the Haldane Chern insulator in a moiré lattice
Propagating Collective Spin-valley Modes in Twisted WSe2
Giant spin Hall effect in AB-stacked MoTe2/WSe2 bilayers
Emergence of Chern metal in a moiré Kondo lattice
Direct measurement of terahertz conductivity in a gated monolayer semiconductor
Electric-field–tuned consecutive topological phase transitions between distinct correlated insulators in moiré MoTe2/WSe2 heterobilayer
Cascaded Logic Gates Based on High-Performance Ambipolar Dual-Gate WSe2 Thin Film Transistors
Intrinsic spin Hall torque in a moiré Chern magnet
Optical Band Engineering of Monolayer WSe2 in a Scanning Tunneling Microscope
Spin-Orbit Enhanced Superconductivity in Bernal Bilayer Graphene
High-efficiency WSe2 photovoltaics enabled by ultra-clean van der Waals contacts
Gate-tunable heavy fermions in a moiré Kondo lattice
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 characterizations3 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Threshold Voltage | critical electric field for QAH transition | 0.687V/nm | — | |||
| Fet Threshold Voltage | representative electric field in QAH state | 0.693V/nm | — | |||
| Fet On Off Ratio | QAH transport signature | quantized Hall resistance h/e^2 with negligible longitudinal resistance | — |
Related documents with shared materials, methods, properties, or citations.
Realization of the Haldane Chern insulator in a moiré lattice
Propagating Collective Spin-valley Modes in Twisted WSe2
Giant spin Hall effect in AB-stacked MoTe2/WSe2 bilayers
Emergence of Chern metal in a moiré Kondo lattice
Direct measurement of terahertz conductivity in a gated monolayer semiconductor
Electric-field–tuned consecutive topological phase transitions between distinct correlated insulators in moiré MoTe2/WSe2 heterobilayer
Cascaded Logic Gates Based on High-Performance Ambipolar Dual-Gate WSe2 Thin Film Transistors
Intrinsic spin Hall torque in a moiré Chern magnet
Optical Band Engineering of Monolayer WSe2 in a Scanning Tunneling Microscope
Spin-Orbit Enhanced Superconductivity in Bernal Bilayer Graphene
High-efficiency WSe2 photovoltaics enabled by ultra-clean van der Waals contacts
Gate-tunable heavy fermions in a moiré Kondo lattice
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 characterizations3 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Threshold Voltage | critical electric field for QAH transition | 0.687V/nm | — | |||
| Fet Threshold Voltage | representative electric field in QAH state | 0.693V/nm | — | |||
| Fet On Off Ratio | QAH transport signature | quantized Hall resistance h/e^2 with negligible longitudinal resistance | — |
Related documents with shared materials, methods, properties, or citations.
Realization of the Haldane Chern insulator in a moiré lattice
Propagating Collective Spin-valley Modes in Twisted WSe2
Giant spin Hall effect in AB-stacked MoTe2/WSe2 bilayers
Emergence of Chern metal in a moiré Kondo lattice
Direct measurement of terahertz conductivity in a gated monolayer semiconductor
Electric-field–tuned consecutive topological phase transitions between distinct correlated insulators in moiré MoTe2/WSe2 heterobilayer
Cascaded Logic Gates Based on High-Performance Ambipolar Dual-Gate WSe2 Thin Film Transistors
Intrinsic spin Hall torque in a moiré Chern magnet
Optical Band Engineering of Monolayer WSe2 in a Scanning Tunneling Microscope
Spin-Orbit Enhanced Superconductivity in Bernal Bilayer Graphene
High-efficiency WSe2 photovoltaics enabled by ultra-clean van der Waals contacts
Gate-tunable heavy fermions in a moiré Kondo lattice
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 characterizations3 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Threshold Voltage | critical electric field for QAH transition | 0.687V/nm | — | |||
| Fet Threshold Voltage | representative electric field in QAH state | 0.693V/nm | — | |||
| Fet On Off Ratio | QAH transport signature | quantized Hall resistance h/e^2 with negligible longitudinal resistance | — |
Related documents with shared materials, methods, properties, or citations.
Realization of the Haldane Chern insulator in a moiré lattice
Propagating Collective Spin-valley Modes in Twisted WSe2
Giant spin Hall effect in AB-stacked MoTe2/WSe2 bilayers
Emergence of Chern metal in a moiré Kondo lattice
Direct measurement of terahertz conductivity in a gated monolayer semiconductor
Electric-field–tuned consecutive topological phase transitions between distinct correlated insulators in moiré MoTe2/WSe2 heterobilayer
Cascaded Logic Gates Based on High-Performance Ambipolar Dual-Gate WSe2 Thin Film Transistors
Intrinsic spin Hall torque in a moiré Chern magnet
Optical Band Engineering of Monolayer WSe2 in a Scanning Tunneling Microscope
Spin-Orbit Enhanced Superconductivity in Bernal Bilayer Graphene
High-efficiency WSe2 photovoltaics enabled by ultra-clean van der Waals contacts
Gate-tunable heavy fermions in a moiré Kondo lattice
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