Research paper
Experimental Characterization| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Threshold Voltage | band inversion critical electric field | 0.66V | — | |||
| Fet On Off Ratio | Chern metal transport signature | nearly quantized Hall resistance with finite longitudinal resistance | — | |||
| Fet Sheet Resistance | Hall resistance plateau | 24000ohm | — | |||
| Fet Sheet Resistance | longitudinal resistance dip | 2000ohm | — | |||
| Fet Sheet Resistance | Hall resistance plateau | 24000ohm | — | |||
| Fet Sheet Resistance | longitudinal resistance plateau | 2000ohm | — | |||
| Fet Sheet Resistance | temperature scale | 1K | — | |||
| Fet Sheet Resistance | temperature scale | 2K | — | |||
| Fet On Off Ratio | Chern insulator transport signature | quantized Hall resistance and vanishing longitudinal resistance | — | |||
| Fet Sheet Resistance | device circumference length | 20um | — | |||
| Fet On Off Ratio | chiral edge-state transport signature | nonlocal resistance signal present around device circumference | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Threshold Voltage | band inversion critical electric field | 0.66V | — | |||
| Fet On Off Ratio | Chern metal transport signature | nearly quantized Hall resistance with finite longitudinal resistance | — | |||
| Fet Sheet Resistance | Hall resistance plateau | 24000ohm | — | |||
| Fet Sheet Resistance | longitudinal resistance dip | 2000ohm | — | |||
| Fet Sheet Resistance | Hall resistance plateau | 24000ohm | — | |||
| Fet Sheet Resistance | longitudinal resistance plateau | 2000ohm | — | |||
| Fet Sheet Resistance | temperature scale | 1K | — | |||
| Fet Sheet Resistance | temperature scale | 2K | — | |||
| Fet On Off Ratio | Chern insulator transport signature | quantized Hall resistance and vanishing longitudinal resistance | — | |||
| Fet Sheet Resistance | device circumference length | 20um | — | |||
| Fet On Off Ratio | chiral edge-state transport signature | nonlocal resistance signal present around device circumference | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Threshold Voltage | band inversion critical electric field | 0.66V | — | |||
| Fet On Off Ratio | Chern metal transport signature | nearly quantized Hall resistance with finite longitudinal resistance | — | |||
| Fet Sheet Resistance | Hall resistance plateau | 24000ohm | — | |||
| Fet Sheet Resistance | longitudinal resistance dip | 2000ohm | — | |||
| Fet Sheet Resistance | Hall resistance plateau | 24000ohm | — | |||
| Fet Sheet Resistance | longitudinal resistance plateau | 2000ohm | — | |||
| Fet Sheet Resistance | temperature scale | 1K | — | |||
| Fet Sheet Resistance | temperature scale | 2K | — | |||
| Fet On Off Ratio | Chern insulator transport signature | quantized Hall resistance and vanishing longitudinal resistance | — | |||
| Fet Sheet Resistance | device circumference length | 20um | — | |||
| Fet On Off Ratio | chiral edge-state transport signature | nonlocal resistance signal present around device circumference | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Threshold Voltage | band inversion critical electric field | 0.66V | — | |||
| Fet On Off Ratio | Chern metal transport signature | nearly quantized Hall resistance with finite longitudinal resistance | — | |||
| Fet Sheet Resistance | Hall resistance plateau | 24000ohm | — | |||
| Fet Sheet Resistance | longitudinal resistance dip | 2000ohm | — | |||
| Fet Sheet Resistance | Hall resistance plateau | 24000ohm | — | |||
| Fet Sheet Resistance | longitudinal resistance plateau | 2000ohm | — | |||
| Fet Sheet Resistance | temperature scale | 1K | — | |||
| Fet Sheet Resistance | temperature scale | 2K | — | |||
| Fet On Off Ratio | Chern insulator transport signature | quantized Hall resistance and vanishing longitudinal resistance | — | |||
| Fet Sheet Resistance | device circumference length | 20um | — | |||
| Fet On Off Ratio | chiral edge-state transport signature | nonlocal resistance signal present around device circumference | — |