Research paper
Experimental CharacterizationOptical Band Engineering of Monolayer WSe₂ in a Scanning Tunneling Microscope
Xuehao Wu, Thomas P. Darlington, Madisen A. Holbrook, Emanuil S. Yanev et al.
Copyright © 2026 Matter42. All rights reserved.
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Threshold Voltage | conduction band edge | -0.35V | — | |||
| Fet Threshold Voltage | valence band edge | -1.5V | — | |||
| Fet On Off Ratio | laser-induced valence-band LDOS enhancement | strong enhancement of dI/dV in the valence band under 633 nm illumination | — | |||
| Fet On Off Ratio | off-resonant response at 750/790/850 nm | little to no modification of LDOS under off-resonant illumination | — | |||
| Optical Band Gap | 633 nm excitation | 1.96eV | — | |||
| Optical Band Gap | nano-PL image diameter | 40nm | — | |||
| Optical Band Gap | topographic diameter | 60nm | — | |||
| PL Peak | regex-detected PL peak | 633nm | — | — | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Threshold Voltage | conduction band edge | -0.35V | — | |||
| Fet Threshold Voltage | valence band edge | -1.5V | — | |||
| Fet On Off Ratio | laser-induced valence-band LDOS enhancement | strong enhancement of dI/dV in the valence band under 633 nm illumination | — | |||
| Fet On Off Ratio | off-resonant response at 750/790/850 nm | little to no modification of LDOS under off-resonant illumination | — | |||
| Optical Band Gap | 633 nm excitation | 1.96eV | — | |||
| Optical Band Gap | nano-PL image diameter | 40nm | — | |||
| Optical Band Gap | topographic diameter | 60nm | — | |||
| PL Peak | regex-detected PL peak | 633nm | — | — | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Threshold Voltage | conduction band edge | -0.35V | — | |||
| Fet Threshold Voltage | valence band edge | -1.5V | — | |||
| Fet On Off Ratio | laser-induced valence-band LDOS enhancement | strong enhancement of dI/dV in the valence band under 633 nm illumination | — | |||
| Fet On Off Ratio | off-resonant response at 750/790/850 nm | little to no modification of LDOS under off-resonant illumination | — | |||
| Optical Band Gap | 633 nm excitation | 1.96eV | — | |||
| Optical Band Gap | nano-PL image diameter | 40nm | — | |||
| Optical Band Gap | topographic diameter | 60nm | — | |||
| PL Peak | regex-detected PL peak | 633nm | — | — | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Threshold Voltage | conduction band edge | -0.35V | — | |||
| Fet Threshold Voltage | valence band edge | -1.5V | — | |||
| Fet On Off Ratio | laser-induced valence-band LDOS enhancement | strong enhancement of dI/dV in the valence band under 633 nm illumination | — | |||
| Fet On Off Ratio | off-resonant response at 750/790/850 nm | little to no modification of LDOS under off-resonant illumination | — | |||
| Optical Band Gap | 633 nm excitation | 1.96eV | — | |||
| Optical Band Gap | nano-PL image diameter | 40nm | — | |||
| Optical Band Gap | topographic diameter | 60nm | — | |||
| PL Peak | regex-detected PL peak | 633nm | — | — | — |