Research paperExperimental CharacterizationOptical Band Engineering of Monolayer WSe₂ in a Scanning Tunneling MicroscopeXuehao Wu, Thomas P. Darlington, Madisen A. Holbrook, Emanuil S. Yanev et al.Nature·2025·10.1038/nmat5017·arXiv:2411.01010AbstractWe use optical-scanning tunneling microscopy with near-field continuous-wave laser excitation to directly probe the electronic structure of light-dressed states in monolayer WSe₂ nanobubbles on template-stripped Au. STS reveals a laser-dependent enhancement of the valence-band tunneling density of states under resonant illumination, while off-resonant excitation produces little change. The work combines STM topography, STS, STML, and nano-PL to study optically driven tunneling and emission in a monolayer TMD semiconductor.Read more
Monolayer WSe₂ nanobubbles exfoliated onto a template-stripped Au substrate and studied by optical-STM/STS, STML, and nano-PL.1 preparation4 characterizations7 properties3 figuresExperimentalWSe₂Studied MaterialAuSubstrate / DielectricExpand
Research paperExperimental CharacterizationOptical Band Engineering of Monolayer WSe₂ in a Scanning Tunneling MicroscopeXuehao Wu, Thomas P. Darlington, Madisen A. Holbrook, Emanuil S. Yanev et al.Nature·2025·10.1038/nmat5017·arXiv:2411.01010AbstractWe use optical-scanning tunneling microscopy with near-field continuous-wave laser excitation to directly probe the electronic structure of light-dressed states in monolayer WSe₂ nanobubbles on template-stripped Au. STS reveals a laser-dependent enhancement of the valence-band tunneling density of states under resonant illumination, while off-resonant excitation produces little change. The work combines STM topography, STS, STML, and nano-PL to study optically driven tunneling and emission in a monolayer TMD semiconductor.Read more
Monolayer WSe₂ nanobubbles exfoliated onto a template-stripped Au substrate and studied by optical-STM/STS, STML, and nano-PL.1 preparation4 characterizations7 properties3 figuresExperimentalWSe₂Studied MaterialAuSubstrate / DielectricExpand
Research paperExperimental CharacterizationOptical Band Engineering of Monolayer WSe₂ in a Scanning Tunneling MicroscopeXuehao Wu, Thomas P. Darlington, Madisen A. Holbrook, Emanuil S. Yanev et al.Nature·2025·10.1038/nmat5017·arXiv:2411.01010AbstractWe use optical-scanning tunneling microscopy with near-field continuous-wave laser excitation to directly probe the electronic structure of light-dressed states in monolayer WSe₂ nanobubbles on template-stripped Au. STS reveals a laser-dependent enhancement of the valence-band tunneling density of states under resonant illumination, while off-resonant excitation produces little change. The work combines STM topography, STS, STML, and nano-PL to study optically driven tunneling and emission in a monolayer TMD semiconductor.Read more
Monolayer WSe₂ nanobubbles exfoliated onto a template-stripped Au substrate and studied by optical-STM/STS, STML, and nano-PL.1 preparation4 characterizations7 properties3 figuresExperimentalWSe₂Studied MaterialAuSubstrate / DielectricExpand
Research paperExperimental CharacterizationOptical Band Engineering of Monolayer WSe₂ in a Scanning Tunneling MicroscopeXuehao Wu, Thomas P. Darlington, Madisen A. Holbrook, Emanuil S. Yanev et al.Nature·2025·10.1038/nmat5017·arXiv:2411.01010AbstractWe use optical-scanning tunneling microscopy with near-field continuous-wave laser excitation to directly probe the electronic structure of light-dressed states in monolayer WSe₂ nanobubbles on template-stripped Au. STS reveals a laser-dependent enhancement of the valence-band tunneling density of states under resonant illumination, while off-resonant excitation produces little change. The work combines STM topography, STS, STML, and nano-PL to study optically driven tunneling and emission in a monolayer TMD semiconductor.Read more
Monolayer WSe₂ nanobubbles exfoliated onto a template-stripped Au substrate and studied by optical-STM/STS, STML, and nano-PL.1 preparation4 characterizations7 properties3 figuresExperimentalWSe₂Studied MaterialAuSubstrate / DielectricExpand
