Abstract

The Chern insulator displays a quantized Hall effect without Landau levels. In a landmark paper in 1988, Haldane showed that a Chern insulator could be realized through complex next-nearest-neighbor hopping in a honeycomb lattice. Despite its profound impact on the field of topological physics and recent implementation in cold-atom experiments, the Haldane model has remained elusive in solid-state materials. Here, we report the experimental realization of a Haldane Chern insulator in AB-stacked MoTe₂/WSe₂ moiré bilayers, which form a honeycomb moiré lattice with two sublattices residing in different layers. We show that the moiré bilayer filled with two charge particles per unit cell is a quantum spin Hall insulator with a tunable charge gap. Under a small out-of-plane magnetic field, it becomes a Chern insulator with Chern number c=1 from magneto-transport studies. The results are qualitatively captured by a generalized Kane-Mele tight-binding Hamiltonian. The Zeeman field splits the QSH insulator into two halves of opposite valley—one with a positive and the other a negative moiré band gap. Our study highlights the unique potential of semiconductor moiré materials in engineering topological lattice Hamiltonians.

Abstract

The Chern insulator displays a quantized Hall effect without Landau levels. In a landmark paper in 1988, Haldane showed that a Chern insulator could be realized through complex next-nearest-neighbor hopping in a honeycomb lattice. Despite its profound impact on the field of topological physics and recent implementation in cold-atom experiments, the Haldane model has remained elusive in solid-state materials. Here, we report the experimental realization of a Haldane Chern insulator in AB-stacked MoTe₂/WSe₂ moiré bilayers, which form a honeycomb moiré lattice with two sublattices residing in different layers. We show that the moiré bilayer filled with two charge particles per unit cell is a quantum spin Hall insulator with a tunable charge gap. Under a small out-of-plane magnetic field, it becomes a Chern insulator with Chern number c=1 from magneto-transport studies. The results are qualitatively captured by a generalized Kane-Mele tight-binding Hamiltonian. The Zeeman field splits the QSH insulator into two halves of opposite valley—one with a positive and the other a negative moiré band gap. Our study highlights the unique potential of semiconductor moiré materials in engineering topological lattice Hamiltonians.

Abstract

The Chern insulator displays a quantized Hall effect without Landau levels. In a landmark paper in 1988, Haldane showed that a Chern insulator could be realized through complex next-nearest-neighbor hopping in a honeycomb lattice. Despite its profound impact on the field of topological physics and recent implementation in cold-atom experiments, the Haldane model has remained elusive in solid-state materials. Here, we report the experimental realization of a Haldane Chern insulator in AB-stacked MoTe₂/WSe₂ moiré bilayers, which form a honeycomb moiré lattice with two sublattices residing in different layers. We show that the moiré bilayer filled with two charge particles per unit cell is a quantum spin Hall insulator with a tunable charge gap. Under a small out-of-plane magnetic field, it becomes a Chern insulator with Chern number c=1 from magneto-transport studies. The results are qualitatively captured by a generalized Kane-Mele tight-binding Hamiltonian. The Zeeman field splits the QSH insulator into two halves of opposite valley—one with a positive and the other a negative moiré band gap. Our study highlights the unique potential of semiconductor moiré materials in engineering topological lattice Hamiltonians.

Abstract

The Chern insulator displays a quantized Hall effect without Landau levels. In a landmark paper in 1988, Haldane showed that a Chern insulator could be realized through complex next-nearest-neighbor hopping in a honeycomb lattice. Despite its profound impact on the field of topological physics and recent implementation in cold-atom experiments, the Haldane model has remained elusive in solid-state materials. Here, we report the experimental realization of a Haldane Chern insulator in AB-stacked MoTe₂/WSe₂ moiré bilayers, which form a honeycomb moiré lattice with two sublattices residing in different layers. We show that the moiré bilayer filled with two charge particles per unit cell is a quantum spin Hall insulator with a tunable charge gap. Under a small out-of-plane magnetic field, it becomes a Chern insulator with Chern number c=1 from magneto-transport studies. The results are qualitatively captured by a generalized Kane-Mele tight-binding Hamiltonian. The Zeeman field splits the QSH insulator into two halves of opposite valley—one with a positive and the other a negative moiré band gap. Our study highlights the unique potential of semiconductor moiré materials in engineering topological lattice Hamiltonians.