Research paper
Experimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization4 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Sheet Resistance | ordinary mode diffusion constant | 15.2cm²/Vs | — | |||
| Fet Sheet Resistance | ordinary mode lifetime | 100ns | — | |||
| Fet Sheet Resistance | fast exotic mode diffusion constant | 28.3cm²/s | — | |||
| Fet Sheet Resistance | slow exotic mode diffusion constant | 2.08cm²/s | — |
Related documents with shared materials, methods, properties, or citations.
Realization of the Haldane Chern insulator in a moiré lattice
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Direct measurement of terahertz conductivity in a gated monolayer semiconductor
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Tunable Atomically Wide Electrostatic Barriers Embedded in a Graphene/WSe2 Heterostructure
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization4 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Sheet Resistance | ordinary mode diffusion constant | 15.2cm²/Vs | — | |||
| Fet Sheet Resistance | ordinary mode lifetime | 100ns | — | |||
| Fet Sheet Resistance | fast exotic mode diffusion constant | 28.3cm²/s | — | |||
| Fet Sheet Resistance | slow exotic mode diffusion constant | 2.08cm²/s | — |
Related documents with shared materials, methods, properties, or citations.
Realization of the Haldane Chern insulator in a moiré lattice
Valley-coherent quantum anomalous Hall state in AB-stacked MoTe2/WSe2 bilayers
Cascaded Logic Gates Based on High-Performance Ambipolar Dual-Gate WSe2 Thin Film Transistors
Emergence of Chern metal in a moiré Kondo lattice
Direct measurement of terahertz conductivity in a gated monolayer semiconductor
Intrinsic spin Hall torque in a moiré Chern magnet
Giant spin Hall effect in AB-stacked MoTe2/WSe2 bilayers
Tunable Atomically Wide Electrostatic Barriers Embedded in a Graphene/WSe2 Heterostructure
Stoner instabilities and Ising excitonic states in twisted transition metal dichalcogenides
Spin-Orbit Enhanced Superconductivity in Bernal Bilayer Graphene
Moiré Band Engineering in Twisted Trilayer WSe2
Low Resistance Ohmic Contact to P-type Monolayer WSe2
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization4 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Sheet Resistance | ordinary mode diffusion constant | 15.2cm²/Vs | — | |||
| Fet Sheet Resistance | ordinary mode lifetime | 100ns | — | |||
| Fet Sheet Resistance | fast exotic mode diffusion constant | 28.3cm²/s | — | |||
| Fet Sheet Resistance | slow exotic mode diffusion constant | 2.08cm²/s | — |
Related documents with shared materials, methods, properties, or citations.
Realization of the Haldane Chern insulator in a moiré lattice
Valley-coherent quantum anomalous Hall state in AB-stacked MoTe2/WSe2 bilayers
Cascaded Logic Gates Based on High-Performance Ambipolar Dual-Gate WSe2 Thin Film Transistors
Emergence of Chern metal in a moiré Kondo lattice
Direct measurement of terahertz conductivity in a gated monolayer semiconductor
Intrinsic spin Hall torque in a moiré Chern magnet
Giant spin Hall effect in AB-stacked MoTe2/WSe2 bilayers
Tunable Atomically Wide Electrostatic Barriers Embedded in a Graphene/WSe2 Heterostructure
Stoner instabilities and Ising excitonic states in twisted transition metal dichalcogenides
Spin-Orbit Enhanced Superconductivity in Bernal Bilayer Graphene
Moiré Band Engineering in Twisted Trilayer WSe2
Low Resistance Ohmic Contact to P-type Monolayer WSe2
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization4 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Sheet Resistance | ordinary mode diffusion constant | 15.2cm²/Vs | — | |||
| Fet Sheet Resistance | ordinary mode lifetime | 100ns | — | |||
| Fet Sheet Resistance | fast exotic mode diffusion constant | 28.3cm²/s | — | |||
| Fet Sheet Resistance | slow exotic mode diffusion constant | 2.08cm²/s | — |
Related documents with shared materials, methods, properties, or citations.
Realization of the Haldane Chern insulator in a moiré lattice
Valley-coherent quantum anomalous Hall state in AB-stacked MoTe2/WSe2 bilayers
Cascaded Logic Gates Based on High-Performance Ambipolar Dual-Gate WSe2 Thin Film Transistors
Emergence of Chern metal in a moiré Kondo lattice
Direct measurement of terahertz conductivity in a gated monolayer semiconductor
Intrinsic spin Hall torque in a moiré Chern magnet
Giant spin Hall effect in AB-stacked MoTe2/WSe2 bilayers
Tunable Atomically Wide Electrostatic Barriers Embedded in a Graphene/WSe2 Heterostructure
Stoner instabilities and Ising excitonic states in twisted transition metal dichalcogenides
Spin-Orbit Enhanced Superconductivity in Bernal Bilayer Graphene
Moiré Band Engineering in Twisted Trilayer WSe2
Low Resistance Ohmic Contact to P-type Monolayer WSe2