Research paper
Experimental CharacterizationComputational DFTEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations3 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Threshold Voltage | Dirac-point shift | 0.54eV | — | |||
| Fet Carrier Concentration | interfacial charge transfer density | 20000000000000cm⁻² | — | |||
| Work Function | CrSBr work function | 5eV | — | |||
| Ir Band Position | IR band | 905cm⁻¹ | — | — | — | — |
| Ir Band Position | IR band | 880cm⁻¹ | — | — | — | — |
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Ultrabroadband THz Conductivity of Gated Graphene In- and Out-of-equilibrium
Graphene-assisted resonant transmission and enhanced Goos-Hänchen shift in a frustrated total internal reflection configuration
Edge polaritons at metal-insulator boundaries in a phase separated correlated oxide
Enhanced THz third–harmonic generation in graphene via hot–carriers in a topological cavity
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Electrostatic, Luminescent, and Paramagnetic Responses of Fresh BN Nanopowders Synthesized under Concentrated Light
First-principles calculations of electrical conductivities of edge-modified graphene nanoribbons: strain effect
The Interacting Energy Bands of Magic Angle Twisted Bilayer Graphene Revealed by the Quantum Twisting Microscope
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations3 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Threshold Voltage | Dirac-point shift | 0.54eV | — | |||
| Fet Carrier Concentration | interfacial charge transfer density | 20000000000000cm⁻² | — | |||
| Work Function | CrSBr work function | 5eV | — | |||
| Ir Band Position | IR band | 905cm⁻¹ | — | — | — | — |
| Ir Band Position | IR band | 880cm⁻¹ | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Impurity effects in twisted carbon nanotubes
Ultrabroadband THz Conductivity of Gated Graphene In- and Out-of-equilibrium
Graphene-assisted resonant transmission and enhanced Goos-Hänchen shift in a frustrated total internal reflection configuration
Edge polaritons at metal-insulator boundaries in a phase separated correlated oxide
Enhanced THz third–harmonic generation in graphene via hot–carriers in a topological cavity
Absence of a Superradiant Phase Transition in Dirac Landau Polaritons
Electrostatic, Luminescent, and Paramagnetic Responses of Fresh BN Nanopowders Synthesized under Concentrated Light
First-principles calculations of electrical conductivities of edge-modified graphene nanoribbons: strain effect
The Interacting Energy Bands of Magic Angle Twisted Bilayer Graphene Revealed by the Quantum Twisting Microscope
Impact of Device Resistances in the Performance of Graphene-based Terahertz Photodetectors
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations3 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Threshold Voltage | Dirac-point shift | 0.54eV | — | |||
| Fet Carrier Concentration | interfacial charge transfer density | 20000000000000cm⁻² | — | |||
| Work Function | CrSBr work function | 5eV | — | |||
| Ir Band Position | IR band | 905cm⁻¹ | — | — | — | — |
| Ir Band Position | IR band | 880cm⁻¹ | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Impurity effects in twisted carbon nanotubes
Ultrabroadband THz Conductivity of Gated Graphene In- and Out-of-equilibrium
Graphene-assisted resonant transmission and enhanced Goos-Hänchen shift in a frustrated total internal reflection configuration
Edge polaritons at metal-insulator boundaries in a phase separated correlated oxide
Enhanced THz third–harmonic generation in graphene via hot–carriers in a topological cavity
Absence of a Superradiant Phase Transition in Dirac Landau Polaritons
Electrostatic, Luminescent, and Paramagnetic Responses of Fresh BN Nanopowders Synthesized under Concentrated Light
First-principles calculations of electrical conductivities of edge-modified graphene nanoribbons: strain effect
The Interacting Energy Bands of Magic Angle Twisted Bilayer Graphene Revealed by the Quantum Twisting Microscope
Impact of Device Resistances in the Performance of Graphene-based Terahertz Photodetectors
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations3 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Threshold Voltage | Dirac-point shift | 0.54eV | — | |||
| Fet Carrier Concentration | interfacial charge transfer density | 20000000000000cm⁻² | — | |||
| Work Function | CrSBr work function | 5eV | — | |||
| Ir Band Position | IR band | 905cm⁻¹ | — | — | — | — |
| Ir Band Position | IR band | 880cm⁻¹ | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Impurity effects in twisted carbon nanotubes
Ultrabroadband THz Conductivity of Gated Graphene In- and Out-of-equilibrium
Graphene-assisted resonant transmission and enhanced Goos-Hänchen shift in a frustrated total internal reflection configuration
Edge polaritons at metal-insulator boundaries in a phase separated correlated oxide
Enhanced THz third–harmonic generation in graphene via hot–carriers in a topological cavity
Absence of a Superradiant Phase Transition in Dirac Landau Polaritons
Electrostatic, Luminescent, and Paramagnetic Responses of Fresh BN Nanopowders Synthesized under Concentrated Light
First-principles calculations of electrical conductivities of edge-modified graphene nanoribbons: strain effect
The Interacting Energy Bands of Magic Angle Twisted Bilayer Graphene Revealed by the Quantum Twisting Microscope
Impact of Device Resistances in the Performance of Graphene-based Terahertz Photodetectors
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