Impact of Device Resistances in the Performance of Graphene-based Terahertz Photodetectors

O. Castelló; Sofía M. López Baptista; K. Watanabe; T. Taniguchi; E. Diez; J.E. Velázquez-Pérez; Y.M. Meziani; J.M. Caridad; J.A. Delgado-Notario

doi:10.13039/501100011033

Paper details

Research paper

Experimental CharacterizationTheoretical

Impact of Device Resistances in the Performance of Graphene-based Terahertz Photodetectors

O. Castelló, Sofía M. López Baptista, K. Watanabe, T. Taniguchi et al.

2024·10.13039/501100011033·arXiv:2412.07279

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Dual-gate graphene field-effect transistor detector with monolayer graphene encapsulated between two thin hBN flakes on a SiO₂/Si substrate, including a local top gate and source/drain contacts for THz photodetection.

2 preparations1 characterization3 properties1 figure

ExperimentalCStudied MaterialBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / Dielectric

Materials

graphene

Studied Material

Also known as

GFET channelmonolayer graphene

Variables

dimensionality= 2D

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Impact of Device Resistances in the Performance of Graphene-based Terahertz Photodetectors | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Device Channel Length	Lch	6um	C	Dual-gate graphene field-effect transistor detector with mon	—
Device Channel Width	Wch (average)	6um	C	Dual-gate graphene field-effect transistor detector with mon	—
Device Top Gate Length	LTG	4.8um	C	Dual-gate graphene field-effect transistor detector with mon	—

Properties

Type	Label	Value	Material	Sample	Source
Device Channel Length	Lch	6um	C	Dual-gate graphene field-effect transistor detector with mon	—
Device Channel Width	Wch (average)	6um	C	Dual-gate graphene field-effect transistor detector with mon	—
Device Top Gate Length	LTG	4.8um	C	Dual-gate graphene field-effect transistor detector with mon	—

Properties

Type	Label	Value	Material	Sample	Source
Device Channel Length	Lch	6um	C	Dual-gate graphene field-effect transistor detector with mon	—
Device Channel Width	Wch (average)	6um	C	Dual-gate graphene field-effect transistor detector with mon	—
Device Top Gate Length	LTG	4.8um	C	Dual-gate graphene field-effect transistor detector with mon	—

Properties

Type	Label	Value	Material	Sample	Source
Device Channel Length	Lch	6um	C	Dual-gate graphene field-effect transistor detector with mon	—
Device Channel Width	Wch (average)	6um	C	Dual-gate graphene field-effect transistor detector with mon	—
Device Top Gate Length	LTG	4.8um	C	Dual-gate graphene field-effect transistor detector with mon	—

Impact of Device Resistances in the Performance of Graphene-based Terahertz Photodetectors

Samples

Dual-gate graphene field-effect transistor detector with monolayer graphene encapsulated between two thin hBN flakes on a SiO₂/Si substrate, including a local top gate and source/drain contacts for THz photodetection.

Materials

Why these are connected

Impact of Device Resistances in the Performance of Graphene-based Terahertz Photodetectors

Samples

Dual-gate graphene field-effect transistor detector with monolayer graphene encapsulated between two thin hBN flakes on a SiO₂/Si substrate, including a local top gate and source/drain contacts for THz photodetection.

Materials

Why these are connected

Impact of Device Resistances in the Performance of Graphene-based Terahertz Photodetectors

Samples

Dual-gate graphene field-effect transistor detector with monolayer graphene encapsulated between two thin hBN flakes on a SiO₂/Si substrate, including a local top gate and source/drain contacts for THz photodetection.

Materials

Why these are connected

Impact of Device Resistances in the Performance of Graphene-based Terahertz Photodetectors

Samples

Dual-gate graphene field-effect transistor detector with monolayer graphene encapsulated between two thin hBN flakes on a SiO₂/Si substrate, including a local top gate and source/drain contacts for THz photodetection.

Materials

Why these are connected

Impact of Device Resistances in the Performance of Graphene-based Terahertz Photodetectors

Samples

Dual-gate graphene field-effect transistor detector with monolayer graphene encapsulated between two thin hBN flakes on a SiO₂/Si substrate, including a local top gate and source/drain contacts for THz photodetection.

Materials

Why these are connected

Impact of Device Resistances in the Performance of Graphene-based Terahertz Photodetectors

Samples

Dual-gate graphene field-effect transistor detector with monolayer graphene encapsulated between two thin hBN flakes on a SiO₂/Si substrate, including a local top gate and source/drain contacts for THz photodetection.

Materials

Why these are connected

Impact of Device Resistances in the Performance of Graphene-based Terahertz Photodetectors

Samples

Dual-gate graphene field-effect transistor detector with monolayer graphene encapsulated between two thin hBN flakes on a SiO₂/Si substrate, including a local top gate and source/drain contacts for THz photodetection.

Materials

Why these are connected

Impact of Device Resistances in the Performance of Graphene-based Terahertz Photodetectors

Samples

Dual-gate graphene field-effect transistor detector with monolayer graphene encapsulated between two thin hBN flakes on a SiO₂/Si substrate, including a local top gate and source/drain contacts for THz photodetection.

Materials

Why these are connected

Processing

Characterization

Properties

Simulations

Processing

Characterization

Properties

Simulations

Processing

Characterization

Properties

Simulations

Processing

Characterization

Properties

Simulations