Interplay of energy and charge transfer in WSe2/CrSBr heterostructures

Paper details

Research paper

Experimental Characterization

Interplay of energy and charge transfer in WSe₂/CrSBr heterostructures

José Roberto de Toledo, Caique Serati de Brito, Barbara L. T. Rosa, Alisson R. Cadore et al.

arXiv·2025·10.1021/acs.nanolett.5c03150·arXiv:2509.00810

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

5 characterizations4 properties3 figures

ExperimentalWSe₂Studied MaterialCrSBrStudied MaterialhBNSubstrate / Dielectric

2 characterizations5 properties3 figures

ReferenceCrSBrStudied Material

WSe₂

Studied Material

Also known as

ML-WSe₂

Variables

dimensionality= monolayer

studied material

CrSBr

Studied Material

Related documents with shared materials, methods, properties, or citations.

Interplay of energy and charge transfer in WSe2/CrSBr heterostructures | Matter42 Literature

Type	Label	Value	Material	Sample	Condition	Source
PL Peak	A exciton	1.4eV	CrSBr	Pristine bulk CrSBr reference crystal measured for compariso		—
PL Peak	B exciton	1.76eV	CrSBr	Pristine bulk CrSBr reference crystal measured for compariso		—
PL Peak	X	1.738eV	WSe₂	Monolayer WSe₂ on bulk CrSBr, capped by a thin hBN layer.		—
PL Peak	X+	1.707eV	WSe₂	Monolayer WSe₂ on bulk CrSBr, capped by a thin hBN layer.		—
PL Peak	DDE peak	1.682eV	WSe₂	Monolayer WSe₂ on bulk CrSBr, capped by a thin hBN layer.		—
PL Peak	XA redshift after magnetic-field-induced phase transition	16 meVmeV	CrSBr	Pristine bulk CrSBr reference crystal measured for compariso		—
PL Peak	XB redshift with increasing magnetic field	80 meVmeV	CrSBr	Pristine bulk CrSBr reference crystal measured for compariso		—
Raman Peak	zero-field splitting	0.65meV	WSe₂	Monolayer WSe₂ on bulk CrSBr, capped by a thin hBN layer.		—
PL Peak	XA emission range	1.35-1.4eV	CrSBr	Pristine bulk CrSBr reference crystal measured for compariso		—
Exciton Peak	B exciton	1.36eV	—	—	—	—
Optical Band Gap	band gap	1.5eV	—	—	—	—

Type	Label	Value	Material	Sample	Condition	Source
PL Peak	A exciton	1.4eV	CrSBr	Pristine bulk CrSBr reference crystal measured for compariso		—
PL Peak	B exciton	1.76eV	CrSBr	Pristine bulk CrSBr reference crystal measured for compariso		—
PL Peak	X	1.738eV	WSe₂	Monolayer WSe₂ on bulk CrSBr, capped by a thin hBN layer.		—
PL Peak	X+	1.707eV	WSe₂	Monolayer WSe₂ on bulk CrSBr, capped by a thin hBN layer.		—
PL Peak	DDE peak	1.682eV	WSe₂	Monolayer WSe₂ on bulk CrSBr, capped by a thin hBN layer.		—
PL Peak	XA redshift after magnetic-field-induced phase transition	16 meVmeV	CrSBr	Pristine bulk CrSBr reference crystal measured for compariso		—
PL Peak	XB redshift with increasing magnetic field	80 meVmeV	CrSBr	Pristine bulk CrSBr reference crystal measured for compariso		—
Raman Peak	zero-field splitting	0.65meV	WSe₂	Monolayer WSe₂ on bulk CrSBr, capped by a thin hBN layer.		—
PL Peak	XA emission range	1.35-1.4eV	CrSBr	Pristine bulk CrSBr reference crystal measured for compariso		—
Exciton Peak	B exciton	1.36eV	—	—	—	—
Optical Band Gap	band gap	1.5eV	—	—	—	—

Type	Label	Value	Material	Sample	Condition	Source
PL Peak	A exciton	1.4eV	CrSBr	Pristine bulk CrSBr reference crystal measured for compariso		—
PL Peak	B exciton	1.76eV	CrSBr	Pristine bulk CrSBr reference crystal measured for compariso		—
PL Peak	X	1.738eV	WSe₂	Monolayer WSe₂ on bulk CrSBr, capped by a thin hBN layer.		—
PL Peak	X+	1.707eV	WSe₂	Monolayer WSe₂ on bulk CrSBr, capped by a thin hBN layer.		—
PL Peak	DDE peak	1.682eV	WSe₂	Monolayer WSe₂ on bulk CrSBr, capped by a thin hBN layer.		—
PL Peak	XA redshift after magnetic-field-induced phase transition	16 meVmeV	CrSBr	Pristine bulk CrSBr reference crystal measured for compariso		—
PL Peak	XB redshift with increasing magnetic field	80 meVmeV	CrSBr	Pristine bulk CrSBr reference crystal measured for compariso		—
Raman Peak	zero-field splitting	0.65meV	WSe₂	Monolayer WSe₂ on bulk CrSBr, capped by a thin hBN layer.		—
PL Peak	XA emission range	1.35-1.4eV	CrSBr	Pristine bulk CrSBr reference crystal measured for compariso		—
Exciton Peak	B exciton	1.36eV	—	—	—	—
Optical Band Gap	band gap	1.5eV	—	—	—	—

Type	Label	Value	Material	Sample	Condition	Source
PL Peak	A exciton	1.4eV	CrSBr	Pristine bulk CrSBr reference crystal measured for compariso		—
PL Peak	B exciton	1.76eV	CrSBr	Pristine bulk CrSBr reference crystal measured for compariso		—
PL Peak	X	1.738eV	WSe₂	Monolayer WSe₂ on bulk CrSBr, capped by a thin hBN layer.		—
PL Peak	X+	1.707eV	WSe₂	Monolayer WSe₂ on bulk CrSBr, capped by a thin hBN layer.		—
PL Peak	DDE peak	1.682eV	WSe₂	Monolayer WSe₂ on bulk CrSBr, capped by a thin hBN layer.		—
PL Peak	XA redshift after magnetic-field-induced phase transition	16 meVmeV	CrSBr	Pristine bulk CrSBr reference crystal measured for compariso		—
PL Peak	XB redshift with increasing magnetic field	80 meVmeV	CrSBr	Pristine bulk CrSBr reference crystal measured for compariso		—
Raman Peak	zero-field splitting	0.65meV	WSe₂	Monolayer WSe₂ on bulk CrSBr, capped by a thin hBN layer.		—
PL Peak	XA emission range	1.35-1.4eV	CrSBr	Pristine bulk CrSBr reference crystal measured for compariso		—
Exciton Peak	B exciton	1.36eV	—	—	—	—
Optical Band Gap	band gap	1.5eV	—	—	—	—