Research paperExperimental CharacterizationEvidence for Exciton Crystals in a 2D Semiconductor HeterotrilayerYusong Bai, Yiliu Li, Song Liu, Yinjie Guo et al.2022·10.1021/acs.nanolett.3c03453·arXiv:2207.09601AbstractSpectroscopic evidence is presented for ordered interlayer exciton phases in a WSe₂/MoSe₂/WSe₂ heterotrilayer. Using photoluminescence spectroscopy on dual-gated h-BN-encapsulated graphene-contacted devices with near-zero twist angles, the work compares bilayer and trilayer regions and reports sharper, longer-lived interlayer exciton emission in the trilayer, consistent with exciton crystallization and field- or density-driven phase transitions.Read more
Device-I WSe₂/MoSe₂/WSe₂ heterostructure region used for main photoluminescence measurements.2 characterizations1 property3 figuresExperimentalWSe₂Studied MaterialMoSe₂Studied MaterialExpand
Device-I WSe₂/MoSe₂ bilayer control region used for comparison with the heterotrilayer.1 characterization1 property1 figureExperimentalWSe₂Studied MaterialMoSe₂Studied MaterialExpand
Device-II WSe₂/MoSe₂/WSe₂ heterostructure region used for time-resolved photoluminescence measurements.2 characterizations2 properties3 figuresExperimentalWSe₂Studied MaterialMoSe₂Studied MaterialExpand
Device-II WSe₂/MoSe₂ bilayer control region used for time-resolved photoluminescence comparison.1 characterization2 properties1 figureExperimentalWSe₂Studied MaterialMoSe₂Studied MaterialExpand
Research paperExperimental CharacterizationEvidence for Exciton Crystals in a 2D Semiconductor HeterotrilayerYusong Bai, Yiliu Li, Song Liu, Yinjie Guo et al.2022·10.1021/acs.nanolett.3c03453·arXiv:2207.09601AbstractSpectroscopic evidence is presented for ordered interlayer exciton phases in a WSe₂/MoSe₂/WSe₂ heterotrilayer. Using photoluminescence spectroscopy on dual-gated h-BN-encapsulated graphene-contacted devices with near-zero twist angles, the work compares bilayer and trilayer regions and reports sharper, longer-lived interlayer exciton emission in the trilayer, consistent with exciton crystallization and field- or density-driven phase transitions.Read more
Device-I WSe₂/MoSe₂/WSe₂ heterostructure region used for main photoluminescence measurements.2 characterizations1 property3 figuresExperimentalWSe₂Studied MaterialMoSe₂Studied MaterialExpand
Device-I WSe₂/MoSe₂ bilayer control region used for comparison with the heterotrilayer.1 characterization1 property1 figureExperimentalWSe₂Studied MaterialMoSe₂Studied MaterialExpand
Device-II WSe₂/MoSe₂/WSe₂ heterostructure region used for time-resolved photoluminescence measurements.2 characterizations2 properties3 figuresExperimentalWSe₂Studied MaterialMoSe₂Studied MaterialExpand
Device-II WSe₂/MoSe₂ bilayer control region used for time-resolved photoluminescence comparison.1 characterization2 properties1 figureExperimentalWSe₂Studied MaterialMoSe₂Studied MaterialExpand
Research paperExperimental CharacterizationEvidence for Exciton Crystals in a 2D Semiconductor HeterotrilayerYusong Bai, Yiliu Li, Song Liu, Yinjie Guo et al.2022·10.1021/acs.nanolett.3c03453·arXiv:2207.09601AbstractSpectroscopic evidence is presented for ordered interlayer exciton phases in a WSe₂/MoSe₂/WSe₂ heterotrilayer. Using photoluminescence spectroscopy on dual-gated h-BN-encapsulated graphene-contacted devices with near-zero twist angles, the work compares bilayer and trilayer regions and reports sharper, longer-lived interlayer exciton emission in the trilayer, consistent with exciton crystallization and field- or density-driven phase transitions.Read more
Device-I WSe₂/MoSe₂/WSe₂ heterostructure region used for main photoluminescence measurements.2 characterizations1 property3 figuresExperimentalWSe₂Studied MaterialMoSe₂Studied MaterialExpand
Device-I WSe₂/MoSe₂ bilayer control region used for comparison with the heterotrilayer.1 characterization1 property1 figureExperimentalWSe₂Studied MaterialMoSe₂Studied MaterialExpand
Device-II WSe₂/MoSe₂/WSe₂ heterostructure region used for time-resolved photoluminescence measurements.2 characterizations2 properties3 figuresExperimentalWSe₂Studied MaterialMoSe₂Studied MaterialExpand
Device-II WSe₂/MoSe₂ bilayer control region used for time-resolved photoluminescence comparison.1 characterization2 properties1 figureExperimentalWSe₂Studied MaterialMoSe₂Studied MaterialExpand
Research paperExperimental CharacterizationEvidence for Exciton Crystals in a 2D Semiconductor HeterotrilayerYusong Bai, Yiliu Li, Song Liu, Yinjie Guo et al.2022·10.1021/acs.nanolett.3c03453·arXiv:2207.09601AbstractSpectroscopic evidence is presented for ordered interlayer exciton phases in a WSe₂/MoSe₂/WSe₂ heterotrilayer. Using photoluminescence spectroscopy on dual-gated h-BN-encapsulated graphene-contacted devices with near-zero twist angles, the work compares bilayer and trilayer regions and reports sharper, longer-lived interlayer exciton emission in the trilayer, consistent with exciton crystallization and field- or density-driven phase transitions.Read more
Device-I WSe₂/MoSe₂/WSe₂ heterostructure region used for main photoluminescence measurements.2 characterizations1 property3 figuresExperimentalWSe₂Studied MaterialMoSe₂Studied MaterialExpand
Device-I WSe₂/MoSe₂ bilayer control region used for comparison with the heterotrilayer.1 characterization1 property1 figureExperimentalWSe₂Studied MaterialMoSe₂Studied MaterialExpand
Device-II WSe₂/MoSe₂/WSe₂ heterostructure region used for time-resolved photoluminescence measurements.2 characterizations2 properties3 figuresExperimentalWSe₂Studied MaterialMoSe₂Studied MaterialExpand
Device-II WSe₂/MoSe₂ bilayer control region used for time-resolved photoluminescence comparison.1 characterization2 properties1 figureExperimentalWSe₂Studied MaterialMoSe₂Studied MaterialExpand
