Abstract

Graphene-hexagonal boron nitride (hBN) scalable heterostructures are pivotal for the development of graphene-based high-tech applications. In this work we demonstrate the realization of high-quality graphene-hBN heterostructures entirely obtained with scalable approaches. hBN continuous films were grown via ion beam assisted physical vapor deposition (IBAD-PVD) directly on commercially-available SiO₂/Si, and used as receiving substrates for graphene single-crystal matrixes grown by chemical vapor deposition (CVD) on copper. The structural, chemical and electronic properties of the heterostructure were investigated by atomic force microscopy (AFM), Raman spectroscopy and electrical transport measurements. We demonstrate graphene carrier mobilities exceeding 10000 cm2/Vs in ambient conditions, 30% higher than those directly measured on SiO₂/Si. We prove the scalability of our approach by measuring more than 100 transfer length method (TLM) devices over centimeter scale, which present an average carrier mobility of 7500 ± 850 cm2/Vs. The reported high-quality all-scalable heterostructures are of relevance for the development of graphene-based high-performing electronic and optoelectronic applications.

Abstract

Graphene-hexagonal boron nitride (hBN) scalable heterostructures are pivotal for the development of graphene-based high-tech applications. In this work we demonstrate the realization of high-quality graphene-hBN heterostructures entirely obtained with scalable approaches. hBN continuous films were grown via ion beam assisted physical vapor deposition (IBAD-PVD) directly on commercially-available SiO₂/Si, and used as receiving substrates for graphene single-crystal matrixes grown by chemical vapor deposition (CVD) on copper. The structural, chemical and electronic properties of the heterostructure were investigated by atomic force microscopy (AFM), Raman spectroscopy and electrical transport measurements. We demonstrate graphene carrier mobilities exceeding 10000 cm2/Vs in ambient conditions, 30% higher than those directly measured on SiO₂/Si. We prove the scalability of our approach by measuring more than 100 transfer length method (TLM) devices over centimeter scale, which present an average carrier mobility of 7500 ± 850 cm2/Vs. The reported high-quality all-scalable heterostructures are of relevance for the development of graphene-based high-performing electronic and optoelectronic applications.

Abstract

Graphene-hexagonal boron nitride (hBN) scalable heterostructures are pivotal for the development of graphene-based high-tech applications. In this work we demonstrate the realization of high-quality graphene-hBN heterostructures entirely obtained with scalable approaches. hBN continuous films were grown via ion beam assisted physical vapor deposition (IBAD-PVD) directly on commercially-available SiO₂/Si, and used as receiving substrates for graphene single-crystal matrixes grown by chemical vapor deposition (CVD) on copper. The structural, chemical and electronic properties of the heterostructure were investigated by atomic force microscopy (AFM), Raman spectroscopy and electrical transport measurements. We demonstrate graphene carrier mobilities exceeding 10000 cm2/Vs in ambient conditions, 30% higher than those directly measured on SiO₂/Si. We prove the scalability of our approach by measuring more than 100 transfer length method (TLM) devices over centimeter scale, which present an average carrier mobility of 7500 ± 850 cm2/Vs. The reported high-quality all-scalable heterostructures are of relevance for the development of graphene-based high-performing electronic and optoelectronic applications.

Abstract

Graphene-hexagonal boron nitride (hBN) scalable heterostructures are pivotal for the development of graphene-based high-tech applications. In this work we demonstrate the realization of high-quality graphene-hBN heterostructures entirely obtained with scalable approaches. hBN continuous films were grown via ion beam assisted physical vapor deposition (IBAD-PVD) directly on commercially-available SiO₂/Si, and used as receiving substrates for graphene single-crystal matrixes grown by chemical vapor deposition (CVD) on copper. The structural, chemical and electronic properties of the heterostructure were investigated by atomic force microscopy (AFM), Raman spectroscopy and electrical transport measurements. We demonstrate graphene carrier mobilities exceeding 10000 cm2/Vs in ambient conditions, 30% higher than those directly measured on SiO₂/Si. We prove the scalability of our approach by measuring more than 100 transfer length method (TLM) devices over centimeter scale, which present an average carrier mobility of 7500 ± 850 cm2/Vs. The reported high-quality all-scalable heterostructures are of relevance for the development of graphene-based high-performing electronic and optoelectronic applications.